JP2000251682A - Wiring forming method, matrix wiring forming method, manufacture of multi-electron beam source, and recording medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To sufficiently density the metal particle mass of a wiring to provide a wiring substrate free of vacuum leaks by successively performing wiring patterning process, baking process, and insulating process a plurality of times to form wirings on a substrate in a plurality of layers, and baking the wirings again after the final wiring patterning. SOLUTION: As the wiring patterning method, both of screen printing and photolithography are preferred. For example, line wirings 3 of 90 μm in width are formed on a glass substrate 1 by use of silver paste, and baked at 480 deg.C for 10 minutes. The process of forming an insulating layer 4, consisting of glass paste on the line wirings 3 followed by baking at 400 deg.C for 10 minutes, is repeated four times to laminate the insulating layers 4. Row wirings 5 of silver paste are formed on the insulating layer 4 and baked at 400 deg.C for 10 minutes. A matrix wiring, consisting of the orthogonally crossing stripe line wirings 3 and row wirings 5, is formed on the substrate 1 via the insulating film. Furthermore, the baking of the substrate at 480 deg.C for 10 minutes is performed three times, whereby a wiring substrate free from disconnection or adjacent wiring short-circuit is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a wiring, a method for forming a matrix wiring, a method for manufacturing a multi-electron beam source, and a storage medium, and more particularly to an electronic circuit board having matrix wiring and an electron source substrate for an image display device. It is suitable to be used for

[0002]

2. Description of the Related Art At present, a cathode ray tube (CRT) is widely and generally used as an image display device. Recently, large CRTs with a display screen exceeding 30 inches have appeared. However, in order to enlarge the display screen of the cathode ray tube, it is necessary to increase the depth as the screen becomes larger, and there is a problem that the screen becomes heavier as the screen becomes larger.

[0003] Therefore, in order to respond to consumers' desire to view powerful images on a larger screen, a cathode ray tube requires a larger installation space and is suitable for realizing a larger screen. Is hard to say.

For this reason, a large and heavy cathode ray tube (CR
It is expected that a flat-plate image display device that is thin enough to be mounted on a wall instead of T), has low power consumption, is thin, light, and has a large screen will appear. A liquid crystal display (LCD) has been actively researched and developed as the flat panel display.

[0005]

Since the LCD is not of a self-luminous type, it needs a light source called a backlight, and there is a problem that most of the power consumption is used to turn on the backlight.

[0006] Further, the LCD has a low light utilization efficiency, so that (a) the image is dark and (b) the viewing angle is limited.
There remains a problem that it is difficult to increase the screen size to over 20 inches.

[0007] Therefore, a thin self-luminous image display device is attracting attention instead of the LCD having the above-mentioned problems. Examples of the display device include a plasma display panel (PDP), a field emission type electron emission element (FE), and a surface conduction type electron emission element, which irradiate a phosphor with ultraviolet light to excite the phosphor to emit light. Is used as an electron source, and a flat image display device or the like is provided in which the phosphor emitted from the electron-emitting device is irradiated to the phosphor to excite the phosphor to emit light. PDPs with a large screen of about 40 inches have begun to be marketed.

The self-luminous image display device can obtain a brighter image than an LCD and has no problem of a viewing angle. However, the PDP is suitable for a large screen, but is inferior in emission luminance and contrast as compared with a cathode ray tube.

Therefore, practical use of an image display device using a surface conduction electron-emitting device as an electron source is expected.
An image display device using the surface conduction electron-emitting device,
A matrix wiring in which the surface conduction electron-emitting devices are arranged in a matrix is provided in an envelope (airtight container).
Since the inside of the envelope (airtight container) is maintained at a vacuum of 10 ^-6 Torr or more, the following problems have been encountered.

That is, as described above, the outer frame is fixed to the glass substrate for maintaining the vacuum via the frit glass serving as the adhesive. Further, the matrix wiring has a role of supplying a voltage from a voltage source arranged outside the hermetic container to elements in the hermetic container.

That is, a part of the bonding portion between the outer frame and the glass surface includes a cross section of the wiring at the intersection of the outer frame and the wiring, and the cross section of the wiring also plays a part in vacuum maintenance. Becomes The conductive wiring is formed by patterning and sintering a thick-film paste obtained by kneading conductive metal particles or the like.

For this reason, generally, the microstructure of the conductive wiring has gaps between the conductive metal particles. This gap narrows with the sintering time at a constant sintering temperature and with the sintering temperature at a constant sintering time,
It is known that a so-called shrinkage occurs.

[0013] Therefore, in the case of the wiring that has been finally patterned, the sintering time to be performed thereafter is short, so that the tightening may be insufficient. SUMMARY OF THE INVENTION In view of the above problems, it is an object of the present invention to prevent the occurrence of pattern wiring in which the tightening is insufficient, and to provide sufficient tightening to each wiring.

[0014]

A wiring forming method according to the present invention is a wiring forming method for forming a plurality of layers of wiring on a substrate by sequentially performing a wiring patterning step, a baking step, and an insulating step a plurality of times. After performing the wiring patterning, the step of firing the wiring is performed again.

The method of forming a matrix wiring according to the present invention is a method of forming a matrix wiring in which wiring is formed in a plurality of layers on a substrate by sequentially performing a wiring patterning step, a baking step, and an insulating step a plurality of times. After performing, the step of firing the wiring is performed again. Another feature of the matrix wiring forming method of the present invention is that a plurality of wirings are provided in each of a row direction and a column direction, and an intersection between the row wiring and the column wiring is provided. A matrix wiring forming method, wherein an insulating layer for insulating the wiring in the row direction and the wiring in the column direction is disposed, wherein the wiring patterning for forming the wiring in the row direction or the wiring in the column direction is performed. After the last step, the step of firing the wiring is performed again. Another feature of the matrix wiring forming method of the present invention is that, after forming a matrix wiring formed by patterning a matrix wiring and an insulating layer of a wiring material, with respect to the substrate on which the matrix wiring is formed, It is characterized in that the step of firing the wiring is performed again. Another feature of the matrix wiring forming method of the present invention is that the patterning method of the wiring material is screen printing of a photosensitive thick film paste. Another feature of the matrix wiring forming method of the present invention is that the patterning method of the wiring material is photolithography of a thick film paste.

In the method of manufacturing a multi-electron beam source according to the present invention, a plurality of wirings are provided in each of a row direction and a column direction, and a surface conduction line is provided at an intersection between the row direction wiring and the column direction wiring. In the method of manufacturing a multi-electron beam source provided with the electron-emitting devices, the step of firing the wiring is performed again after the final wiring patterning is performed.

A storage medium according to the present invention is characterized in that a program for causing a computer to execute the procedure of the wiring forming method is stored so as to be readable from the computer. Another feature of the storage medium of the present invention is that a program for causing a computer to execute the procedure of the above matrix wiring forming method is stored so as to be readable from the computer. Also,
Another feature of the storage medium of the present invention is that a program for causing a computer to execute the procedure of the method for manufacturing a multi-electron beam source is stored so as to be readable from the computer.

[0018]

Since the present invention has the above-described technical means, the baking intended only for the tightening of the wiring is performed again, so that the tightening can be sufficiently given even to the wiring which is finally patterned. Sufficient shrinkage can be given to all the wirings formed on the substrate.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a wiring forming method, a matrix wiring forming method, a method of manufacturing a multi-electron beam source, and a storage medium according to the present invention will be described below. First, an outline of a thin display device to which the present invention is applied will be described. In a display device using a field emission electron-emitting device FE or a surface conduction electron-emitting device, the light emission principle is basically the same as that of a cathode ray tube. Therefore, there is a possibility that brightness and contrast can be achieved equivalent to those of a cathode ray tube.

Therefore, the present applicant has paid attention to an image display device using a surface conduction electron-emitting device among the self-luminous type flat plate image display devices. This is because the structure is relatively simple and suitable for forming a large area.

A surface conduction electron-emitting device is a device in which a voltage is applied to a conductive thin film made of fine particles formed on a substrate from a pair of electrodes called device electrodes to the conductive thin film. Electrons are emitted into a vacuum from the electron emission portion formed in the portion. The principle of the image display device using the surface conduction electron-emitting device is to emit light by irradiating the phosphor with electrons emitted from the surface conduction electron-emitting device.

Also, the applicant of the present invention discloses Japanese Patent Application Laid-Open No. 6-34263.
Patent Document 6 discloses an example of an image display device using a surface conduction electron-emitting device as an electron source. 3 and 4 show a schematic configuration of the surface conduction electron-emitting device disclosed in the above publication. FIG. 5 shows a schematic configuration diagram of an image display device using the surface conduction electron-emitting device disclosed in the above publication.

FIG. 3 is a plan view of the structure of the surface conduction electron-emitting device, and FIG. 4 is a sectional view of the structure of the surface conduction electron-emitting device. 3 and 4, 10001 is an insulating substrate,
10004 is a conductive thin film made of fine particles, 10002,
Reference numeral 10003 denotes a pair of device electrodes for obtaining electrical connection with the conductive thin film 10004, and 10005 denotes an electron-emitting portion.

In this surface conduction electron-emitting device, the distance L between the pair of device electrodes 10002 and 10003 is set to several thousand to several hundred μm. The length W of the device electrode is set to several μm to several hundred μm in consideration of the resistance value of the device electrode and the electron emission characteristics. The thickness d of the device electrode is set in the range of several hundreds of μm to several μm in order to maintain electrical connection with the conductive thin film 10004 made of fine particles. The element electrodes 10002 and 10003 are formed by, for example, a photolithography technique.

The thickness of the conductive thin film 10004 made of fine particles is appropriately set in consideration of the step coverage to the device electrodes 10002 and 10003, the resistance between the device electrodes, forming conditions, and the like. Is preferably set in the range of Å, and more preferably in the range of 10Å to 500Å.

The resistance value of the conductive thin film 10004 is as follows:
It is preferable that Rs be set to 10 ² to 10 ⁷ Ω / □.
Rs is represented by R = Rs (l / w), where R is the resistance measured in the length direction of the thin film having a thickness t, a width w, and a length l. Also, when the thickness t and the resistivity ρ are constant,
It is represented by Rs = ρ / t.

FIG. 5 is a schematic diagram showing an example of an image display device using a surface conduction electron-emitting device. In FIG.
5005 is a rear plate, 5006 is an outer frame, and 5007 is a face plate. Each connection portion of the outer frame 5006, the rear plate, and the face plate is sealed with an adhesive such as a low melting point glass frit (not shown) to form an envelope (airtight container) for maintaining the inside of the image display device in a vacuum. Have been.

The rear plate 5005 has a substrate 5001
Has been fixed. On this substrate 5001, N × M surface-conduction electron-emitting devices 5002 are formed and arranged (N and M are positive integers of 2 or more, and are appropriately set according to the target number of display pixels. ).

A surface conduction electron-emitting device 5002
Is, as shown in FIG. 5, M row-directional wirings 5003 and N
It is wired by the column direction wiring 5004. The row wiring 5003 and the column wiring 5004 are formed by, for example, a photolithography technique.

A portion constituted by the substrate 5001, a plurality of electron-emitting devices such as the surface conduction electron-emitting device 5002, the row wiring 5003, and the column wiring 5004 is called a multi-electron beam source. Further, at least at an intersection of the row direction wiring 5003 and the column direction wiring 5004, an interlayer insulating layer (not shown) is formed between the two wirings.
Electrical insulation between the row wiring 5003 and the column wiring 5004 is maintained.

A fluorescent film 5008 made of a fluorescent material is formed on the lower surface of the face plate 5007. Phosphors (not shown) of three primary colors of red (R), green (G), and blue (B) are separately applied. Further, a black body (not shown) is arranged between the phosphors of the respective colors constituting the fluorescent film 5008. Further, a metal back 5009 made of Al or the like is formed on the surface of the fluorescent film 5008 on the rear plate 5005 side.

Dx1 to Dxm, Dy1 to Dyn and H
“v” is an electric connection terminal having an airtight structure provided for electrically connecting the image display device and an electric circuit (not shown). Dx1 to Dxm are electrically connected to the column direction wiring 5004 of the multi-electron beam source.

Similarly, Dy1 to Dyn are electrically connected to the row wiring 5003 of the multi-electron beam source. Hv is electrically connected to the metal back 5009. The inside of the envelope (airtight container) is maintained at a vacuum of 10 ^-6 Torr or more.

For this reason, as the display screen of the image display device is enlarged, the rear plate 5005 and the face plate 500 due to the pressure difference between the inside and the outside of the envelope (airtight container).
Means for preventing the deformation or destruction of 7 are required. Therefore, the face plate 5007 and the rear plate 5005
In some cases, a support member (not shown) called a spacer or a rib for supporting atmospheric pressure may be disposed between the two.

As described above, the distance between the substrate 5001 on which the electron-emitting device is formed and the face plate 5007 on which the fluorescent film is formed is generally maintained at several hundred μm to several mm, and the inside of the envelope (airtight container) is high. It is maintained in a vacuum.

The above-described image display device includes the external terminals Dx1 to Dxm, Dy1 to Dyn, and the row wiring 5
003, by applying a voltage to each surface conduction electron-emitting device through the column direction wiring 5004, electrons are emitted from each surface conduction electron-emitting device.

At the same time, a high voltage of several hundred volts to several kV is applied to the metal back 5009 through the external terminal Hv to accelerate electrons emitted from the surface conduction electron-emitting device, and to increase the inner surface of the face plate 5007. Are made to collide with the phosphors of each color. Thereby, the phosphor is excited to emit light, and an image is displayed.

However, the image display device has the following problems. That is, as described above, the outer frame is fixed to the glass substrate for maintaining the vacuum via the frit glass serving as the adhesive. Further, the wiring plays a role of supplying a voltage from a voltage source arranged outside the airtight container to an element in the airtight container.

That is, a part of the bonding portion between the outer frame and the glass surface includes a cross section of the wiring at the intersection of the outer frame and the wiring, and the cross section of the wiring also plays a part in vacuum maintenance. Becomes The conductive wiring used in the present invention is formed by patterning and sintering a thick film paste obtained by kneading a conductive metal agglomerate and the like.

Therefore, generally, the microstructure of the conductive wiring has gaps between the conductive metal particles. This gap narrows with the sintering time at a constant sintering temperature and with the sintering temperature at a constant sintering time,
It is known that a so-called shrinkage occurs. From the above, in the case where this compaction does not proceed sufficiently,
It is pointed out that it is difficult to maintain a vacuum in the airtight container through the conductive metal lump.

Incidentally, the wiring has a so-called matrix wiring configuration in which an insulating layer for insulation is arranged at the intersection. In this production, (a) one of the matrix wirings is patterned and baked. (B) patterning and firing the wiring of the insulating layer; (C) It is general to sequentially form them in the order of patterning and baking the other wiring of the matrix wiring.

That is, in the cross section of the outer frame intersecting portion of the wiring to be patterned and fired first among the matrix wirings, the above-described pattern tightening proceeds due to the subsequent firing of the pattern, so that a vacuum leak can be expected to be suppressed. . But,
Finally, the patterned wiring may be insufficiently tightened.

As a method of forming a pattern of a thick film to be a conductive wiring on a substrate, for example, a screen printing method, a method of exposing and developing a photosensitive thick film paste, an additive method, a sand blast method, a wet etching method, etc. Are known.

Next, an embodiment of a wiring forming method, a matrix wiring forming method, a method of manufacturing a multi-electron beam source, and a storage medium according to the present invention which solves the above-mentioned problems will be described.

[First Embodiment] An example in which a matrix wiring is formed on a glass substrate in this embodiment will be described with reference to FIG. 1A to 1C are plan views showing a process for forming a matrix wiring.

In FIG. 1, reference numeral 1 denotes a substrate, and 2 denotes a place where a vacuum frame is installed. 3 is a column wiring, 4 is an insulating layer, 5
Indicates row wiring. Here, a part of the column wiring crosses the outer frame bonding portion.

Next, the procedure of this embodiment will be described. In addition,
The firing in the present embodiment was performed in a belt furnace. First, FIG.
The column wiring 3 is formed on a glass substrate as shown in FIG. Such formation was performed by screen printing. Here, the column wiring 3 has a width of 90 μm. The printing paste used a silver paste. After printing, the glass substrate is kept at 480 ° C. for 10 minutes.
It was fired under the condition of keeping the temperature for a minute.

Next, as shown in FIG. 1B, an insulating layer 4 was formed by screen printing. As the paste material, a glass paste containing lead oxide as a main component and a glass binder and a resin mixed was used. The firing was performed at 400 ° C. for 10 minutes. In this embodiment mode, printing and baking of the glass paste are repeated four times to laminate the insulating layers.

Finally, the row wiring 5 was formed on the insulating layer 4 by screen printing using a silver paste. The glass substrate after printing was fired at 400 ° C. for 10 minutes. As described above, a matrix wiring in which the striped column wiring and the striped row wiring are orthogonal to each other via the insulating film is formed. In the present embodiment, the substrate on which the matrix wiring is formed as described above is further fired three times at 480 ° C. for 10 minutes.

The matrix wiring formed as described above had good characteristics without disconnection or short-circuit between adjacent wirings. Further, when the outer frame was formed at a predetermined place using the glass substrate having the matrix wiring formed thereon to form an airtight container, the degree of vacuum was not reduced and good results were obtained.

[Second Embodiment] The present embodiment differs from the first embodiment in that FIG.
The pattern shown in (c) was formed by photolithography using a thick photosensitive paste. The procedure is shown below. The firing in the present embodiment was performed in a belt furnace.

First, a column wiring 3 is formed on a glass substrate as shown in FIG. First, the coating thickness 9
A thick photosensitive silver paste of μm was formed by screen printing in a solid shape.

Next, a photomask having a predetermined pattern was put thereon and exposed to ultraviolet light under the condition of 300 mj / cm ² . afterwards,
A column wiring pattern having a width of 90 μm was obtained by water development. After that,
The glass substrate was fired at 480 ° C. for 10 minutes.

Next, as shown in FIG. 1B, four insulating layers were formed by screen printing. Therefore, a coating thickness of 1
A 9 μm thick photosensitive insulating paste was formed by screen printing in a solid form.

Next, a photomask having a predetermined pattern was put on the substrate and exposed to ultraviolet light under the condition of 480 mj / cm ² . Thereafter, water development was performed to obtain an insulating layer pattern having a width of 400 μm. Thereafter, the glass substrate was fired at 480 ° C. for 10 minutes.

In this embodiment, patterning and baking of the insulating paste were repeated four times, and an insulating layer was laminated. Finally, the row wiring 5 was formed on the insulating layer 4. For this purpose, a thick photosensitive silver paste having a coating thickness of 9 μm was formed on a substrate by screen printing in a solid state.

Next, a photomask having a predetermined pattern was put on the substrate and exposed to ultraviolet light under the condition of 300 mj / cm ² . Thereafter, water development was performed to obtain a row wiring pattern having a width of 400 μm. Thereafter, the glass substrate was fired at 480 ° C. for 10 minutes.

As described above, a matrix wiring in which the striped column wiring and the striped row wiring are orthogonal to each other is formed via the insulating film. In the present embodiment, the substrate on which the matrix wiring is formed as described above is
Three additional firings at 10 ° C. for 10 minutes were added.

The matrix wiring formed as described above had good characteristics without disconnection or short circuit. Further, when the airtight container was formed by forming the outer frame at a predetermined place using the glass substrate on which the matrix wiring was formed, the degree of vacuum did not decrease.

[Third Embodiment] Hereinafter, an embodiment using a printing method will be described. The electron source substrate for the multi-electron beam source used in the image forming apparatus can be created by the wiring forming method of the first embodiment. Further, the image forming apparatus can be formed by disposing the face plate on which the phosphor is disposed to face the electron source substrate and then forming an airtight container.

Hereinafter, description will be made in order with reference to FIG. FIG.
Was formed using the manufacturing apparatus of the above-described embodiment,
FIG. 7 is a top view illustrating a process of manufacturing a multi-electron beam source substrate using the surface conduction electron-emitting device. FIG. 2 (a),
(C) and (e) show an example in which 2 × 2 electron-emitting devices are formed on a blue glass substrate (not shown) together with wirings in a matrix of a total of four.

In FIG. 2, reference numeral 501 denotes an element electrode formed by offset printing. In the present embodiment, a pair of rectangular electrodes with a gap of 20 μm are arranged in a matrix in the element electrode pattern 501 in the present embodiment.

Reference numeral 502 denotes a column wiring formed by baking printing Ag ink, and reference numeral 503 denotes a strip-shaped insulating layer orthogonal to the column wiring formed by baking printing glass ink.

The insulating layer 503 has a cutout opening 504 at one electrode position of the pair of element electrodes 501. Reference numeral 505 denotes a row wiring formed by baking the printing Ag ink, which is arranged and formed in a strip shape on the insulating layer 503, and the element electrode 501 is formed in the opening 504 of the insulating layer 503.
Is electrically connected to one of the electrodes.

Column wiring 502, insulating layer 503, row wiring 50
5 are both formed by a screen printing method. 506
Is a thin film made of Pd fine particles as an electron emitting material, and is formed between the device electrodes 501 and 501.

Hereinafter, FIGS. 2 (a), (b), (c),
The method of manufacturing the element substrate according to the present embodiment will be sequentially described with reference to FIGS. First, as shown in FIG. 2A, a 40 cm square electron source substrate on which a large number of pairs of device electrodes are arranged is prepared.

Next, a silver ink is printed as a conductive ink on the electron source substrate according to the screen printing method described in the second embodiment as shown in FIG. A first wiring (column wiring) of a lower wiring having a width of 100 μm and a thickness of 12 μm was formed.

Next, as shown in FIG. 2C, an interlayer insulating layer 503 is formed by a screen printing method in a direction orthogonal to the column wiring. As the ink material, a glass ink containing lead oxide as a main component and a glass binder and a resin was used.
The printing and baking of this glass ink was repeated four times to form interlayer insulation in a stripe shape.

Next, as shown in FIG. 2D, the interlayer insulating layer 5 is formed.
The second wiring (row wiring) 5 having a width of 100 μm and a thickness of 12 μm is formed on the substrate 03 by the screen printing method described in the first embodiment.
05 was formed. Note that both ends of the row wiring 505 were connected to the leading wiring of the row wiring formed earlier. As described above, a matrix wiring in which the stripe-shaped lower layer wiring and the stripe-shaped upper layer wiring are orthogonal to each other via the interlayer insulating film is formed.

Next, an electron emitting portion is formed. First, after applying a droplet of an organic palladium aqueous solution on the substrate on which the device electrodes and wirings are formed by an inkjet method,
Heat treatment was performed at 300 ° C. for 10 minutes to form a conductive thin film 506 having a desired shape and made of Pd.

The conductive thin film was composed of fine particles containing Pd as a main element, and had a thickness of 10 nm. The fine particle film here is a film in which a plurality of fine particles are aggregated, and not only a film in which the fine particles are individually dispersed and arranged, but also a film in which the fine particles are adjacent to each other or overlapped (including an island shape). And the particle diameter refers to the diameter of the fine particles recognizable in the above state.

Thus, the electron source substrate before the forming is completed (FIG. 2E). An electron source substrate is placed on a 40 cm square substrate, and 480 × 480 electron-emitting devices are arranged in a matrix. A face plate having phosphors corresponding to R, G, and B is placed in a vacuum envelope. Placed.

Then, after conducting the energizing process such as forming and activating steps of the electron-emitting device, an arbitrary voltage signal of 14 V is applied to the row wiring and the potential of 0 V is sequentially applied to the column wiring of the element substrate. The other column wirings were set at a potential of 7V. When an anode voltage of 5 kV was applied to the metal back of the face plate, an arbitrary image could be displayed.

(Other Embodiments of the Present Invention) The present invention is applied to a system composed of a plurality of devices (for example, a host computer, an interface device, a reader, a printer, etc.), but is also applicable to an apparatus composed of one device. You may.

Further, in order to realize various functions so as to realize the functions of the above-described embodiment, the functions of the above-described embodiments are realized by an apparatus connected to the above-mentioned various devices or a computer in a system. The present invention also includes programs implemented by supplying the program code of the software described above and operating the various devices according to programs stored in a computer (CPU or MPU) of the system or apparatus.

In this case, the program code of the software implements the functions of the above-described embodiment, and the program code itself and means for supplying the program code to a computer are provided.
For example, a storage medium storing such a program code constitutes the present invention. As a storage medium for storing such a program code, for example, a floppy disk, hard disk, optical disk, magneto-optical disk, CD-ROM,
A magnetic tape, a nonvolatile memory card, a ROM, or the like can be used.

Further, when the computer executes the supplied program code, not only the functions of the above-described embodiment are realized, but also the OS (operating system) or other operating system running on the computer. Needless to say, even when the functions of the above-described embodiments are realized in cooperation with application software or the like, such program codes are included in the embodiments of the present invention.

Further, after the supplied program code is stored in a memory provided in a function expansion board of a computer or a function expansion unit connected to the computer, the function expansion board or the function expansion unit is specified based on the instruction of the program code. It is needless to say that the present invention also includes a case where the CPU or the like provided in the first embodiment performs part or all of the actual processing, and the processing realizes the functions of the above-described embodiments.

[0079]

As described above, according to the present invention,
After the last wiring patterning, the step of firing the wirings is performed again, so that all the wirings can be satisfactorily tightened. Thereby, sufficient shrinkage can be given to the metal granules of all the wirings formed on the wiring substrate, and a wiring substrate free from the problem of vacuum leak can be provided. Therefore, according to the present invention, it is possible to provide a substrate on which a matrix wiring having sufficient problem of vacuum leakage can be given to a metal block in a wiring cross section at a portion where a matrix wiring and an outer frame intersect, and which has no problem of vacuum leak. can do.

According to another feature of the present invention, the step of firing the wiring is performed again after the last wiring patterning, so that a multi-electron beam source having good characteristics can be manufactured. Can be.

[Brief description of the drawings]

FIGS. 1A to 1C are process diagrams illustrating a first embodiment of a matrix wiring forming method according to the present invention.

FIG. 2 is a top view showing a manufacturing process of a multi-electron beam source substrate using a surface conduction electron-emitting device.

FIG. 3 is a plan view of a configuration of a surface conduction electron-emitting device.

FIG. 4 is a sectional view of a configuration of a surface conduction electron-emitting device.

FIG. 5 is a perspective view showing an example of an image display device using a surface conduction electron-emitting device.

[Explanation of symbols]

 Reference Signs List 1 board 2 outer frame forming place 3 column wiring 4 insulating layer 5 row wiring

Claims (10)

[Claims] 1. A wiring forming method for forming wiring on a substrate in a plurality of layers by sequentially performing a wiring patterning step, a baking step, and an insulating step a plurality of times, wherein the wiring is formed after the last wiring patterning is performed. A wiring forming method, wherein the firing step is performed again. 2. A method of forming a matrix wiring in which a wiring patterning step, a baking step, and an insulating step are sequentially performed a plurality of times to form wirings on a substrate in a plurality of layers. Wherein the step of firing is performed again. 3. A plurality of wirings are provided in each of a row direction and a column direction, and at the intersection of the row direction wiring and the column direction wiring, the row direction wiring and the column direction wiring A method of forming a matrix wiring in which an insulating layer for insulating the wiring is disposed, wherein after the wiring patterning for forming the wiring in the row direction or the wiring in the column direction is performed last, the wiring is baked. A method for forming a matrix wiring, wherein the step is performed again. 4. After forming a matrix wiring formed by patterning a wiring material and a matrix wiring and an insulating layer, the substrate on which the matrix wiring is formed is
A method of forming a matrix wiring, wherein the step of firing the wiring is performed again. 5. The method according to claim 4, wherein the patterning method of the wiring material is screen printing of a photosensitive thick film paste. 6. The method according to claim 4, wherein the patterning method of the wiring material is photolithography of a thick film paste. 7. A plurality of wirings are provided in each of a row direction and a column direction, and a surface conduction electron-emitting device is provided at an intersection between the wiring in the row direction and the wiring in the column direction. A method for manufacturing a multi-electron beam source, characterized in that the step of firing the wiring is performed again after the last wiring patterning is performed. 8. A storage medium storing a program for causing a computer to execute the procedure of the wiring forming method according to claim 1 so as to be readable from the computer. 9. A storage medium storing a program for causing a computer to execute the procedure of the method of forming a matrix wiring according to claim 2 so as to be readable from the computer. 10. A storage medium storing a program for causing a computer to execute the procedure of the method for manufacturing a multi-electron beam source according to claim 7 so as to be readable from the computer.