JP2000184290A - Solid-state image pickup device - Google Patents

Solid-state image pickup device

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Publication number
JP2000184290A
JP2000184290A JP10352725A JP35272598A JP2000184290A JP 2000184290 A JP2000184290 A JP 2000184290A JP 10352725 A JP10352725 A JP 10352725A JP 35272598 A JP35272598 A JP 35272598A JP 2000184290 A JP2000184290 A JP 2000184290A
Authority
JP
Japan
Prior art keywords
solid
incident light
state imaging
imaging device
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10352725A
Other languages
Japanese (ja)
Inventor
Tadashi Nagai
正 永井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10352725A priority Critical patent/JP2000184290A/en
Publication of JP2000184290A publication Critical patent/JP2000184290A/en
Pending legal-status Critical Current

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent deterioration in the S/N attended with miniaturization of a solid-state image pickup elements and in a frequency characteristic due to light diffraction effect by an aperture area of an incident light limit section caused by the reduction in a distance between photoelectric conversion elements without losing a signal storage time and continuity of the storage time in a solid-state image pickup section. SOLUTION: The solid-state image pickup device is provided with a summing arithmetic section 4 that applies summing and averaging signals outputted n-times for one vertical scanning period from a solid-state image pickup element 2 at a read interval ratio and outputs the result and an input selection arithmetic section 16 that applies band limit to a prescribed signal band of an output from the summing arithmetic section 4 and gives the input of the result of an incident light control section 3. Then a drive control section 8 controls an element drive section 7 so that the storage time of charges read n-times for one vertical scanning period is almost uniformized thereby enhancing the S/N of the signal and widening the aperture area of the incident light limit section 1.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、絞り制御手段を備
えた固体撮像装置に関するものである。
[0001] 1. Field of the Invention [0002] The present invention relates to a solid-state imaging device having aperture control means.

【0002】[0002]

【従来の技術】近年、ビデオカメラや電子スチルカメラ
においては、撮像素子として固体撮像素子が広く使用さ
れ、また画面の明るさを常時最適制御するため、自動絞
り機能が多く用いられている。
2. Description of the Related Art In recent years, solid-state image sensors have been widely used as image sensors in video cameras and electronic still cameras, and an automatic aperture function has been frequently used in order to constantly control the brightness of a screen.

【0003】以下に従来の固体撮像装置の絞り制御につ
いて簡単に説明する。従来の固体撮像装置を図6及び図
7に示す。図6は従来の固体撮像装置の構成を示すブロ
ック図である。図6において、41はレンズ(図示せ
ず)を介して入射される被写体の入射光量を制御する入
射光制限部で、ビデオカメラなどの撮像手段に一般的に
用いられている絞りに相当する。42は入射光制限部4
1からの光学信号を電気信号に変換する固体撮像素子、
43は入射光制限部41における入射光量を制御するよ
う動作する入射光制御部、44は固体撮像素子41から
の被写体電気信号を信号処理する信号処理部、45は固
体撮像素子41からの電気信号が所定のレベルになるよ
う入射光制御部43を制御する入力演算部、46は固定
撮像素子42を駆動する素子駆動部である。
Hereinafter, aperture control of a conventional solid-state imaging device will be briefly described. FIGS. 6 and 7 show a conventional solid-state imaging device. FIG. 6 is a block diagram showing a configuration of a conventional solid-state imaging device. In FIG. 6, reference numeral 41 denotes an incident light limiting unit that controls the amount of incident light on a subject that enters through a lens (not shown), and corresponds to a diaphragm generally used for an imaging unit such as a video camera. 42 is an incident light limiting unit 4
A solid-state imaging device that converts an optical signal from 1 into an electric signal,
Reference numeral 43 denotes an incident light control unit that operates to control the amount of incident light in the incident light limiting unit 41; 44, a signal processing unit that performs signal processing on a subject electric signal from the solid-state imaging device 41; and 45, an electric signal from the solid-state imaging device 41. Is an input operation unit that controls the incident light control unit 43 so that the level becomes a predetermined level, and 46 is an element driving unit that drives the fixed imaging element 42.

【0004】また図7は図6に示した構成を有する固体
撮像装置の各部における動作を示すタイミングチャート
である。同図(a)は垂直同期信号、同図(b)は垂直
同期信号に同期した固体撮像素子からの読み出し信号、
同図(c)は固体撮像素子における電荷蓄積レベル、同
図(d)は固体撮像素子からの出力信号、同図(e)は
信号処理部の出力信号、同図(f)は入力演算部からの
出力信号である。
FIG. 7 is a timing chart showing the operation of each section of the solid-state imaging device having the configuration shown in FIG. FIG. 3A shows a vertical synchronization signal, FIG. 3B shows a readout signal from a solid-state imaging device synchronized with the vertical synchronization signal,
FIG. 1C shows the charge accumulation level in the solid-state image sensor, FIG. 2D shows the output signal from the solid-state image sensor, FIG. 2E shows the output signal of the signal processing unit, and FIG. This is the output signal from.

【0005】以上のように構成された従来の固体撮像部
について、以下その動作について説明する。
The operation of the conventional solid-state imaging unit having the above-described configuration will be described below.

【0006】レンズを介して入射された光信号は入射光
制限部41で光量を制限し、固体撮像素子42上の光電
変換素子に結像して、素子駆動部46から出力される制
御信号に基づき光電変換及び電荷蓄積を行う。均一な光
信号が固体撮像素子42に入射すると、図7(a)で示
す垂直同期信号を同タイミングで、図7(b)で示す読
み出し信号により、時間Tvの間に図7(c)のように
蓄積された電荷を、固体撮像素子42の光電変換素子か
ら読み出し、図7(d)のように固体撮像素子42から
電気信号として出力する。固体撮像素子42からはレベ
ルAに相当する信号が一垂直走査期間Tvに出力され
る。このようにして固体撮像素子42から出力された電
気信号を信号処理部44において映像信号に変換するよ
う処理して、図7(e)に示す信号が出力される。
The light signal incident through the lens is limited in the amount of light by an incident light restricting unit 41, forms an image on a photoelectric conversion element on a solid-state imaging device 42, and forms a control signal output from an element driving unit 46. Photoelectric conversion and charge accumulation are performed based on the results. When a uniform optical signal is incident on the solid-state imaging device 42, the vertical synchronization signal shown in FIG. 7A is output at the same timing by the readout signal shown in FIG. The charge thus accumulated is read out from the photoelectric conversion element of the solid-state imaging device 42 and output as an electric signal from the solid-state imaging device 42 as shown in FIG. A signal corresponding to level A is output from the solid-state imaging device 42 during one vertical scanning period Tv. In this way, the electric signal output from the solid-state imaging device 42 is processed by the signal processing unit 44 to convert it into a video signal, and the signal shown in FIG. 7E is output.

【0007】一方で、固体撮像素子42から出力される
電気信号は入力演算部45に入力され、入力演算部45
では入力された電気信号が所定のレベルとなるよう入射
光制御部43を介して入射光制限部41を駆動して光量
を制御する。
On the other hand, an electric signal output from the solid-state imaging device 42 is input to an input operation unit 45, and the input operation unit 45
Then, the incident light limiting unit 41 is driven via the incident light control unit 43 to control the amount of light so that the input electric signal becomes a predetermined level.

【0008】この入力演算部45で設定されたレベルが
図7(f)のAであるならば、入射光制御部43は常時
この値が入力演算部45に入力されるように、入射光制
限部41を駆動するため、安定な入射光制御が行われ
る。
If the level set by the input operation unit 45 is A in FIG. 7 (f), the incident light control unit 43 controls the incident light control so that this value is always input to the input operation unit 45. Since the unit 41 is driven, stable incident light control is performed.

【0009】[0009]

【発明が解決しようとする課題】しかしながら上記の従
来の固体撮像装置では、固体撮像素子42の小型化に伴
い、固体撮像素子内の光電変換部の縮小によって出力信
号のS/Nが劣化し、さらに光電変換素子間の距離縮小
による入射光制限部41の開口面積による光の回折効果
により周波数特性劣化するにもかかわらず、補正手段な
どが特に設けられておらず、S/N及び周波数特性が劣
化したまま信号出力部44から映像信号が出力されてし
まうという問題点を有していた。
However, in the above-mentioned conventional solid-state imaging device, as the size of the solid-state imaging device 42 is reduced, the S / N of the output signal is deteriorated due to the reduction in the size of the photoelectric conversion unit in the solid-state imaging device. Further, although frequency characteristics are degraded due to a light diffraction effect due to an opening area of the incident light restricting portion 41 due to a reduction in the distance between the photoelectric conversion elements, a correction means or the like is not particularly provided, and S / N and frequency characteristics are reduced. There has been a problem that a video signal is output from the signal output unit 44 while being deteriorated.

【0010】本発明は上記従来の問題点を解決するもの
で、信号蓄積時間及び蓄積時刻の連続性を損なうことな
く、固体撮像素子の小型化に伴なうS/N劣化光電変換
素子間距離縮小による入射光制限部の開口面積による光
の回折効果による周波数特性劣化を防ぐことが可能な固
体撮像部を提供することを目的とする。
The present invention solves the above-mentioned conventional problems, and does not impair the continuity of the signal accumulation time and the accumulation time, and reduces the distance between S / N-degraded photoelectric conversion elements accompanying the downsizing of the solid-state imaging device. An object of the present invention is to provide a solid-state imaging unit capable of preventing frequency characteristic deterioration due to light diffraction effect due to an opening area of an incident light limiting unit due to reduction.

【0011】[0011]

【課題を解決するための手段】この目的を達成するため
に本発明の固体撮像部は、光信号を電気信号に変換する
固体撮像素子と、一垂直走査期間中に前記固体撮像素子
から複数回電気信号を出力するよう駆動する素子駆動手
段と、前記固体撮像素子への入射光を制限する入射光制
限手段と、前記固体撮像素子の出力に応じて前記入射光
制限手段を制御する入射光制御手段と、前記固体撮像素
子から一垂直走査期間中に複数回出力される電気信号を
加算し平均する加算演算手段と、前記加算演算手段の演
算結果に基づき前記入射光制御部を制御する入力演算手
段とを備えたものである。
In order to achieve this object, a solid-state imaging device according to the present invention comprises a solid-state imaging device for converting an optical signal into an electric signal and a plurality of times from the solid-state imaging device during one vertical scanning period. Element driving means for driving to output an electric signal, incident light limiting means for limiting incident light to the solid-state imaging device, and incident light control for controlling the incident light limiting means in accordance with an output of the solid-state imaging element Means, addition operation means for adding and averaging the electric signals output a plurality of times during one vertical scanning period from the solid-state imaging device, and input operation for controlling the incident light control section based on the operation result of the addition operation means Means.

【0012】この構成によって、複数回読み出された信
号を加算平均することによりS/Nが良好で、かつ加算
平均された信号を入射光制限部制御用に用いることによ
り入射光制限部の開口面積を広くすることができ周波数
特性の良好な固体撮像部を提供することが可能である。
With this configuration, the signal read out a plurality of times is added and averaged, so that the signal-to-noise ratio is good, and the added-averaged signal is used for controlling the incident light limiting section, thereby opening the incident light limiting section. It is possible to provide a solid-state imaging section having a large area and good frequency characteristics.

【0013】[0013]

【発明の実施の形態】本発明の請求項1に記載の発明
は、光信号を電気信号に変換する固体撮像素子と、一垂
直走査期間中に前記固体撮像素子から複数回電気信号を
出力するよう駆動する素子駆動手段と、前記固体撮像素
子への入射光を制限する入射光制限手段と、前記固体撮
像素子の出力に応じて前記入射光制限手段を制御する入
射光制御手段と、前記固体撮像素子から一垂直走査期間
中に複数回出力される電気信号を加算し平均する加算演
算手段と、前記加算演算手段の演算結果に基づき前記入
射光制御部を制御する入力演算手段とを備えたものであ
り、このような構成により、信号のS/N改善を行うと
ともに入射光制限部の開口面積を広くとることができる
という作用を有する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the first aspect of the present invention, a solid-state imaging device for converting an optical signal into an electric signal, and an electric signal is output from the solid-state imaging device a plurality of times during one vertical scanning period. Element driving means for driving as described above, incident light limiting means for limiting incident light to the solid-state imaging device, incident light controlling means for controlling the incident light limiting means in accordance with an output of the solid-state imaging element, and An addition operation unit for adding and averaging electric signals output a plurality of times during one vertical scanning period from the imaging element, and an input operation unit for controlling the incident light control unit based on a calculation result of the addition operation unit. With such a configuration, the S / N ratio of the signal can be improved, and the opening area of the incident light limiting portion can be increased.

【0014】請求項2に記載の発明は、光信号を電気信
号に変換する固体撮像素子と、一垂直走査期間中に前記
固体撮像素子から複数回電気信号を出力するよう駆動す
る素子駆動手段と、前記固体撮像素子への入射光を制限
する入射光制限手段と、前記固体撮像素子の出力に応じ
て前記入射光制限手段を制御する入射光制御手段と、前
記固体撮像素子から一垂直走査期間中に複数回出力され
る電気信号を加算し平均する加算演算手段と、前記固体
撮像素子から出力される複数の電気信号のうち一方の電
気信号のみを選択して演算し前記入射光制御部を制御す
る入力選択演算手段とを備えたものであり、このような
構成により、信号のS/N改善を行うとともに入射光制
限部の開口面積を広くとることができるという作用を有
する。
According to a second aspect of the present invention, there is provided a solid-state imaging device for converting an optical signal into an electric signal, and element driving means for driving the solid-state imaging device to output an electric signal a plurality of times during one vertical scanning period. An incident light restricting unit that restricts incident light to the solid-state imaging device, an incident light control unit that controls the incident light restricting unit according to an output of the solid-state imaging device, and one vertical scanning period from the solid-state imaging device. An addition operation means for adding and averaging the electric signals output a plurality of times during the operation, and selecting and calculating only one of the electric signals output from the plurality of electric signals output from the solid-state imaging device, calculating the incident light control unit. It has an input selection calculating means for controlling. With such a configuration, the S / N of the signal is improved and the opening area of the incident light restricting portion can be widened.

【0015】以下、本発明の実施の形態について、図面
を用いて説明する。(実施の形態1)図1は本発明の固
体撮像装置の実施の形態2の構成を示すブロック図であ
り、1はレンズ(図示せず)を介して入射される被写体
の入射光量を制御する入射光制限手段である入射光制限
部で、ビデオカメラなどの撮像手段に一般的に用いられ
ている絞りに相当する。2は入射光制限部1からの光学
信号を電気信号に変換する固体撮像素子、3は入射光制
限部1における入射光量を制御するよう動作する入射光
制御手段である入射光制御部、4は固体撮像素子2から
一垂直同期信号期間に複数回出力される電気信号を加算
演算する加算演算手段である加算演算部、5は加算演算
部4からの電気信号を映像信号に変換するなどの信号処
理を行い外部へ出力する信号処理手段である信号処理
部、6は加算演算部4からの電気信号が所定のレベルに
なるよう入射光制御部1を制御する入力演算手段である
入力演算部、7は固体撮像素子2を駆動する素子駆動手
段である素子駆動部、8は素子駆動部7を駆動制御する
駆動制御手段である駆動制御部である。
Hereinafter, embodiments of the present invention will be described with reference to the drawings. (Embodiment 1) FIG. 1 is a block diagram showing a configuration of a solid-state imaging device according to Embodiment 2 of the present invention. Reference numeral 1 denotes an incident light amount of a subject incident through a lens (not shown). This is an incident light restricting unit that is an incident light restricting unit, and corresponds to a diaphragm generally used for an imaging unit such as a video camera. Reference numeral 2 denotes a solid-state imaging device that converts an optical signal from the incident light limiting unit 1 into an electric signal. Reference numeral 3 denotes an incident light control unit that is an incident light control unit that operates to control the amount of incident light in the incident light limiting unit 1. An addition operation unit, which is an addition operation means for performing an addition operation on the electric signal output a plurality of times during one vertical synchronization signal period from the solid-state imaging device 2, is a signal for converting the electric signal from the addition operation unit 4 into a video signal. A signal processing unit 6 that is a signal processing unit that performs processing and outputs it to the outside; an input calculation unit 6 that is an input calculation unit that controls the incident light control unit 1 so that the electric signal from the addition calculation unit 4 becomes a predetermined level; Reference numeral 7 denotes an element driving unit that is an element driving unit that drives the solid-state imaging device 2, and reference numeral 8 denotes a driving control unit that is a driving control unit that drives and controls the element driving unit 7.

【0016】図2は本実施の形態で用いる固体撮像素子
2の一例を示した模式図である。この固体撮像素子2は
インターライン型CCDと呼ばれ、固体撮像装置に多く
用いられている。図2において、21は光信号を電荷に
変換し一定時間蓄積する光電変換素子、22は光電変換
素子21で蓄積された電荷を読み出すための読み出しゲ
ート、23は読み出しゲート22を介して読み出された
電荷を垂直方向に順次転送する垂直転送段、24は垂直
転送段23によって転送されてきた電荷を水平方向に順
次転送する水平転送段、25は水平転送段24によって
運ばれてきた電荷を固体撮像素子から外部へ出力する出
力部である。
FIG. 2 is a schematic diagram showing an example of the solid-state imaging device 2 used in the present embodiment. The solid-state imaging device 2 is called an interline CCD, and is widely used in solid-state imaging devices. In FIG. 2, reference numeral 21 denotes a photoelectric conversion element that converts an optical signal into an electric charge and accumulates the electric signal for a certain period of time, 22 denotes a read gate for reading the electric charge accumulated by the photoelectric conversion element 21, and 23 denotes a read through the read gate 22. A vertical transfer stage for sequentially transferring the transferred charges in the vertical direction; 24, a horizontal transfer stage for sequentially transferring the charges transferred by the vertical transfer stage 23 in the horizontal direction; 25, a solid transfer of the charges carried by the horizontal transfer stage 24. This is an output unit that outputs from the image sensor to the outside.

【0017】図3は本実施の形態の時間軸方向の動作を
説明するためのタイミングチャートである。同図(a)
は垂直同期信号、(b)は図2で示した固体撮像素子2
の読み出しゲート22に印加する読み出し信号、(c)
は均一な光が図2で示した固体撮像素子2に入射した時
の光電変換素子21における電荷蓄積、(d)は固体撮
像素子2からの出力信号、(e)は加算演算部4の出力
信号、(f)は信号処理部5の出力信号である。駆動制
御部8で一垂直走査期間にTv/2周期で2回発生した
読み出し信号(b)は素子駆動部7で所定の電圧に変換
され、固体撮像素子2に印加される。
FIG. 3 is a timing chart for explaining the operation of this embodiment in the time axis direction. FIG.
Is a vertical synchronizing signal, and (b) is a solid-state imaging device 2 shown in FIG.
A read signal applied to the read gate 22 of FIG.
2 shows charge accumulation in the photoelectric conversion element 21 when uniform light enters the solid-state imaging device 2 shown in FIG. 2, (d) shows an output signal from the solid-state imaging device 2, and (e) shows an output of the addition operation unit 4. (F) is an output signal of the signal processing unit 5. The readout signal (b) generated twice by the drive control unit 8 in one Tv / 2 cycle during one vertical scanning period is converted into a predetermined voltage by the element drive unit 7 and applied to the solid-state imaging device 2.

【0018】以上のように構成された本実施の形態の固
体撮像装置について、以下その動作について説明する。
The operation of the solid-state imaging device according to the present embodiment configured as described above will be described below.

【0019】レンズを介して入射された光信号は入射光
制限部1で光量を制限し、固体撮像素子2上の光電変換
素子に結像して、素子駆動部7から出力される制御信号
に基づき光電変換及び電荷蓄積を行う。均一な光信号が
固体撮像素子2に入射すると、図3(a)で示す垂直同
期信号と同タイミングで、図3(b)で示す読み出し信
号により、時間Tv/2の間に図3(c)のように蓄積
された電荷を、固体撮像素子2の光電変換素子から読み
出し、図3(d)のように固体撮像素子2から電気信号
として出力する。固体撮像素子2からはレベルAに相当
する信号が1/2垂直走査期間Tvに出力される。この
ようにして固体撮像素子2から出力された電気信号は加
算演算部4に入力される。
The light signal incident through the lens is limited in the amount of light by the incident light restricting unit 1, forms an image on the photoelectric conversion element on the solid-state image pickup device 2, and forms a control signal output from the element driving unit 7. Photoelectric conversion and charge accumulation are performed based on the results. When a uniform optical signal is incident on the solid-state imaging device 2, the readout signal shown in FIG. 3B at the same timing as the vertical synchronization signal shown in FIG. 3) is read out from the photoelectric conversion element of the solid-state imaging device 2, and is output as an electric signal from the solid-state imaging device 2 as shown in FIG. A signal corresponding to the level A is output from the solid-state imaging device 2 during the 1/2 vertical scanning period Tv. The electric signal output from the solid-state imaging device 2 in this manner is input to the addition operation unit 4.

【0020】この時、固体撮像素子2の光電変換素子2
1は蓄積時間T1=Tv/2及び蓄積時間T2=Tv/
2毎に、図3(c)のようにレベルAの電荷蓄積を行
い、読み出しゲート22を介し垂直転送段23へ電荷を
転送する。このレベルA相当の電荷は水平転送段24を
介して出力部25から図3(d)で示すように一垂直走
査期間に二回出力される。
At this time, the photoelectric conversion element 2 of the solid-state imaging device 2
1 is the accumulation time T1 = Tv / 2 and the accumulation time T2 = Tv /
For every two, charge accumulation at level A is performed as shown in FIG. 3C, and charge is transferred to the vertical transfer stage 23 via the read gate 22. The charge corresponding to the level A is output from the output unit 25 via the horizontal transfer stage 24 twice in one vertical scanning period as shown in FIG.

【0021】この一垂直走査期間に二回出力された信号
を加算演算部4に入力し、二回出力の時間軸合わせを行
った後、加算平均を行い信号処理部5に入力する。ここ
で固体撮像素子から出力される電気信号の主たるノイズ
はランダムノイズであることから、二回出力された信号
の加算平均を行うことにより、ノイズ成分は二乗平均さ
れ約3dB低下する。また、一垂直走査期間の二回出力
の蓄積タイミングはT1、T2のように連続的になって
おり、加算平均を行うことにより、従来の一垂直走査期
間の一回出力と同じ蓄積時間の信号を得ることが出来
る。また、この加算演算部4の出力信号は入力演算部6
へ入力され、所定の信号帯域に帯域制限を行って入射光
制御部3を介して入射光制限部1を駆動制御する。
The signal output twice during one vertical scanning period is input to the addition operation unit 4, the time axis of the output is adjusted twice, the addition is averaged, and the output is input to the signal processing unit 5. Here, since the main noise of the electric signal output from the solid-state imaging device is random noise, by performing the averaging of the signal output twice, the noise component is square-averaged and is reduced by about 3 dB. The accumulation timing of the two outputs during one vertical scanning period is continuous as shown by T1 and T2. By performing averaging, the signal having the same accumulation time as that of the conventional one output during one vertical scanning period is obtained. Can be obtained. The output signal of the addition operation unit 4 is
And controls the driving of the incident light limiting unit 1 via the incident light controlling unit 3 by performing band limitation on a predetermined signal band.

【0022】ここで、入射光制限部1の開口面積をα、
入力演算部6と入射光制御部3で与えられる係数をβ、
光電変換素子21での電荷蓄積時間をt、光電変換素子
21から出力される信号レベルをSとすると、「α×t
=β×S」が成立する。即ち、短い蓄積時間で通常同等
の信号を得るには入射光制限部1の開口面積を増やす必
要がある。
Here, the opening area of the incident light limiting section 1 is α,
The coefficient given by the input operation unit 6 and the incident light control unit 3 is β,
Assuming that the charge accumulation time in the photoelectric conversion element 21 is t and the signal level output from the photoelectric conversion element 21 is S, “α × t
= Β × S ”holds. That is, it is necessary to increase the opening area of the incident light restricting unit 1 in order to normally obtain the same signal in a short accumulation time.

【0023】従来技術と本実施の形態では一回の電荷蓄
積が、従来技術ではTvであるのに対し、本実施の形態
ではTv/2と半分になっている。また、光電変換素子
から出力される信号レベルは従来技術と本実施の形態で
は同一のレベルAとなっている。従って、従来技術の入
射光制限部の開口面積pと本実施の形態の入射光制限部
1の開口面積qには、前式から「q=p×2」の関係が
生じる。即ち、従来技術と同等の信号レベルを得るため
には、本実施の形態の入射光制限部1の開口面積は2倍
にすることで達成できる。よって、T1またはT2期間
内において通常同等の信号レベルを得るために、入力演
算部6は入射光制御部3を制御して、入射光制限部1の
開口面積を2倍に開かせる。
In the prior art and this embodiment, one-time charge accumulation is Tv in the prior art, but is half as Tv / 2 in the present embodiment. In addition, the signal level output from the photoelectric conversion element is the same level A in the related art and the present embodiment. Therefore, a relationship of “q = p × 2” arises from the previous equation between the opening area p of the incident light limiting unit of the prior art and the opening area q of the incident light limiting unit 1 of the present embodiment. That is, in order to obtain a signal level equivalent to that of the related art, it can be achieved by doubling the opening area of the incident light limiting unit 1 of the present embodiment. Therefore, in order to normally obtain the same signal level within the period T1 or T2, the input operation unit 6 controls the incident light control unit 3 to double the opening area of the incident light limiting unit 1.

【0024】以上のように本実施の形態によれば、信号
蓄積時間及び蓄積時刻の連続性を損なうことなく、固体
撮像素子2の小型化に伴なうS/N劣化及び入射光制限
部の開口面積縮小による周波数特性劣化を、入射光制限
部1の開口面積を2倍にすることで防ぐことが可能とな
る。
As described above, according to the present embodiment, the S / N degradation accompanying the downsizing of the solid-state image pickup device 2 and the incident light limiting section are not impaired without deteriorating the signal accumulation time and the continuity of the accumulation time. Degradation of the frequency characteristics due to the reduction of the aperture area can be prevented by doubling the aperture area of the incident light limiting unit 1.

【0025】(実施の形態2)図4は本発明の固体撮像
装置の実施の形態2の構成を示すブロック図であり、1
はレンズ(図示せず)を介して入射される被写体の入射
光量を制御する入射光制限手段である入射光制限部で、
ビデオカメラなどの撮像手段に一般的に用いられている
絞りに相当する。2は入射光制限部1からの光学信号を
電気信号に変換する固体撮像素子、3は入射光制限部1
における入射光量を制御するよう動作する入射光制御手
段である入射光制御部、4は固体撮像素子2から一垂直
同期信号期間に複数回出力される電気信号を加算演算す
る加算演算手段である加算演算部、5は加算演算部4か
らの電気信号を映像信号に変換するなどの信号処理を行
い外部へ出力する信号処理手段である信号処理部、16
は固体撮像素子2からの電気信号が所定のレベルになる
よう入射光制御部3を制御する入力選択演算手段である
入力選択演算部で、本実施の形態では一垂直走査期間に
二回出力された電気信号のうち一回分だけを選択して演
算処理を行って入射光制御部3を制御する。7は固定撮
像素子2を駆動する素子駆動手段である素子駆動部、8
は素子駆動部7を駆動制御する駆動制御手段である駆動
制御部である。
(Embodiment 2) FIG. 4 is a block diagram showing a configuration of a solid-state imaging device according to Embodiment 2 of the present invention.
Denotes an incident light restricting unit that is an incident light restricting unit that controls an incident light amount of a subject incident through a lens (not shown).
This corresponds to a diaphragm generally used for an imaging unit such as a video camera. Reference numeral 2 denotes a solid-state imaging device that converts an optical signal from the incident light limiting unit 1 into an electric signal.
The incident light control unit 4 is an incident light control unit that operates so as to control the amount of incident light. The arithmetic unit 5 is a signal processing unit that is a signal processing unit that performs signal processing such as converting an electric signal from the addition arithmetic unit 4 into a video signal and outputs the processed signal to the outside.
Is an input selection operation unit that is an input selection operation unit that controls the incident light control unit 3 so that an electric signal from the solid-state imaging device 2 is at a predetermined level. The incident light control unit 3 is controlled by selecting only one of the electrical signals and performing an arithmetic process. Reference numeral 7 denotes an element driving unit which is an element driving unit for driving the fixed imaging element 2;
Reference numeral denotes a drive control unit which is drive control means for controlling the drive of the element drive unit 7.

【0026】図5は本実施の形態の時間軸方向の動作を
説明するためのタイミングチャートである。同図(a)
は垂直同期信号、(b)は図2で示した固体撮像素子2
の読み出しゲート22に印加する読み出し信号、(c)
は均一な光が図2で示した固体撮像素子2に入射した時
の光電変換素子21における電荷蓄積、(d)は固体撮
像素子2からの出力信号、(e)は加算演算部4の出力
信号、(f)は信号処理部5の出力信号である。駆動制
御部8で一垂直走査期間にTv/2周期で2回発生した
読み出し信号(b)は素子駆動部7で所定の電圧に変換
され、固体撮像素子2に印加される。(g)は入力選択
演算部16の出力信号である。
FIG. 5 is a timing chart for explaining the operation of the present embodiment in the time axis direction. FIG.
Is a vertical synchronizing signal, and (b) is a solid-state imaging device 2 shown in FIG.
A read signal applied to the read gate 22 of FIG.
2 shows charge accumulation in the photoelectric conversion element 21 when uniform light enters the solid-state imaging device 2 shown in FIG. 2, (d) shows an output signal from the solid-state imaging device 2, and (e) shows an output of the addition operation unit 4. (F) is an output signal of the signal processing unit 5. The readout signal (b) generated twice by the drive control unit 8 in one Tv / 2 cycle during one vertical scanning period is converted into a predetermined voltage by the element drive unit 7 and applied to the solid-state imaging device 2. (G) is an output signal of the input selection operation unit 16.

【0027】以上のように構成された本実施の形態の固
体撮像装置について、以下その動作について説明する。
The operation of the solid-state imaging device according to the present embodiment configured as described above will be described below.

【0028】レンズを介して入射された光信号は入射光
制限部1で光量を制限し、固体撮像素子2上の光電変換
素子に結像して、素子駆動部7から出力される制御信号
に基づき光電変換及び電荷蓄積を行う。均一な光信号が
固体撮像素子2に入射すると、図5(a)で示す垂直同
期信号と同タイミングで、図5(b)で示す読み出し信
号により、時間Tv/2の間に図5(c)のように蓄積
された電荷を、固体撮像素子2の光電変換素子から読み
出し、図5(d)のように固体撮像素子2から電気信号
として出力する。固体撮像素子2からはレベルAに相当
する信号が1/2垂直走査期間Tvに出力される。この
ようにして固体撮像素子2から出力された電気信号は加
算演算部4に入力される。
The light signal incident through the lens is limited in the amount of light by the incident light restricting unit 1, forms an image on a photoelectric conversion element on the solid-state image pickup device 2, and forms a control signal output from the element driving unit 7. Photoelectric conversion and charge accumulation are performed based on the results. When a uniform optical signal is incident on the solid-state imaging device 2, the readout signal shown in FIG. 5B at the same timing as the vertical synchronizing signal shown in FIG. 5) is read out from the photoelectric conversion element of the solid-state imaging device 2 and output as an electric signal from the solid-state imaging device 2 as shown in FIG. A signal corresponding to the level A is output from the solid-state imaging device 2 during the 1/2 vertical scanning period Tv. The electric signal output from the solid-state imaging device 2 in this manner is input to the addition operation unit 4.

【0029】この時、固体撮像素子2の光電変換素子2
1は蓄積時間T1=Tv/2及び蓄積時間T2=Tv/
2毎に、図5(c)のようにレベルAの電荷蓄積を行
い、読み出しゲート22を介し垂直転送段23へ電荷を
転送する。このレベルA相当の電荷は水平転送段24を
介して出力部25から図5(d)で示すように一垂直走
査期間に二回出力される。
At this time, the photoelectric conversion element 2 of the solid-state imaging device 2
1 is the accumulation time T1 = Tv / 2 and the accumulation time T2 = Tv /
For every two, charge accumulation at level A is performed as shown in FIG. 5C, and charge is transferred to the vertical transfer stage 23 via the read gate 22. The charge corresponding to the level A is output from the output unit 25 via the horizontal transfer stage 24 twice during one vertical scanning period as shown in FIG.

【0030】この一垂直走査期間に二回出力された信号
を加算演算回路4に入力し、二回出力の時間軸合わせを
行った後、加算平均を行い信号処理部5に入力する。こ
こで固体撮像素子2から出力される電気信号の主たるノ
イズはランダムノイズであることから、二回出力された
信号の加算平均を行うことにより、ノイズ成分は二乗平
均され約3dB低下する。また、一垂直走査期間の二回
出力の蓄積タイミングはT1、T2のように連続的にな
っており、加算平均を行うことにより、従来の一垂直走
査期間の一回出力と同じ蓄積時間の信号を得ることが出
来る。
The signal output twice during one vertical scanning period is input to the addition operation circuit 4, the time axis of the output is adjusted twice, the addition is averaged, and the output is input to the signal processing unit 5. Here, since the main noise of the electric signal output from the solid-state imaging device 2 is random noise, by performing the averaging of the signal output twice, the noise component is squared and reduced by about 3 dB. The accumulation timing of the two outputs during one vertical scanning period is continuous as shown by T1 and T2. By performing averaging, the signal having the same accumulation time as that of the conventional one output during one vertical scanning period is obtained. Can be obtained.

【0031】また、この一垂直走査期間に、図5(d)
のように固体撮像素子2から二回出力された電気信号
は、入力選択演算部16へ入力される。入力選択演算部
16で図5(g)のように二回出力の内一回分(本実施
の形態ではT1期間の電気信号)だけを選択して演算処
理を行って、入射光制御部3を介して入射光制限部1を
駆動制御する。
Also, during this one vertical scanning period, FIG.
The electric signal output twice from the solid-state imaging device 2 as described above is input to the input selection operation unit 16. As shown in FIG. 5 (g), the input selection calculation unit 16 selects only one of the two outputs (the electrical signal in the T1 period in the present embodiment) and performs a calculation process, and the input light control unit 3 The drive of the incident light limiting unit 1 is controlled via the control unit.

【0032】ここで、入射光制限部1の開口面積をα、
入力選択演算部16と入射光制御部3で与えられる係数
をβ、光電変換素子21での電荷蓄積時間をt、光電変
換素子21から出力される信号レベルをSとすると、
「α×t=β×S」が成立する。即ち、短い蓄積時間で
通常同等の信号を得るには入射光制限部1の開口面積を
増やす必要がある。
Here, the opening area of the incident light restricting portion 1 is α,
Assuming that the coefficient given by the input selection calculator 16 and the incident light controller 3 is β, the charge accumulation time in the photoelectric conversion element 21 is t, and the signal level output from the photoelectric conversion element 21 is S,
“Α × t = β × S” holds. That is, it is necessary to increase the opening area of the incident light restricting unit 1 in order to normally obtain the same signal in a short accumulation time.

【0033】従来技術と本実施の形態では一回の電荷蓄
積が、従来技術ではTvであるのに対し、本実施の形態
ではTv/2と半分になっている。また、光電変換素子
から出力される信号レベルは従来技術と本実施の形態で
は同一のレベルAとなっている。従って、従来技術の入
射光制限部の開口面積pと本実施の形態の入射光制限部
1の開口面積qには、前式から「q=p×2」の関係が
生じる。即ち、従来技術と同等の信号レベルを得るため
には、本実施の形態の入射光制限部1の開口面積は2倍
にすることで達成できる。よって、T1またはT2期間
内において通常同等の信号レベルを得るために、入力選
択演算部16は入射光制御部3を制御して、入射光制限
部1の開口面積を2倍に開かせる。
In the prior art and the present embodiment, one-time charge accumulation is Tv in the prior art, but is half as Tv / 2 in the present embodiment. In addition, the signal level output from the photoelectric conversion element is the same level A in the related art and the present embodiment. Therefore, a relationship of “q = p × 2” arises from the previous equation between the opening area p of the incident light limiting unit of the prior art and the opening area q of the incident light limiting unit 1 of the present embodiment. That is, in order to obtain a signal level equivalent to that of the related art, it can be achieved by doubling the opening area of the incident light limiting unit 1 of the present embodiment. Therefore, in order to normally obtain the same signal level in the T1 or T2 period, the input selection calculation unit 16 controls the incident light control unit 3 to double the opening area of the incident light limiting unit 1.

【0034】以上のように本実施の形態によれば、信号
蓄積時間及び蓄積時刻の連続性を損なうことなく、固体
撮像素子2の小型化に伴なうS/N劣化及び入射光制限
部1の開口面積縮小による周波数特性劣化を、入射光制
限部1の開口面積を2倍にすることで防ぐことが可能と
なる。
As described above, according to the present embodiment, the S / N degradation and the incident light limiting unit 1 accompanying the downsizing of the solid-state imaging device 2 are maintained without impairing the signal accumulation time and the continuity of the accumulation time. Can be prevented by doubling the opening area of the incident light restricting portion 1.

【0035】なお、以上の説明では一垂直走査期間内の
電荷読み出し回数を2回としたが、2回以上の複数回で
あれば良く、使用する固体撮像素子をインターライン型
CCDとしたがCMOSセンサー、フレームインターラ
イン型CCD等でよく、一垂直走査期間内の電荷読み出
し間隔を等間隔としたが不等間隔としてもよい。
In the above description, the number of charge readings in one vertical scanning period is two. However, the number of charges may be two or more, and the solid-state imaging device used is an interline type CCD. A sensor, a frame interline type CCD or the like may be used, and the charge reading intervals within one vertical scanning period are set at equal intervals, but may be set at irregular intervals.

【0036】[0036]

【発明の効果】以上のように本発明は、信号蓄積時間及
び蓄積時刻の連続性を損なうことなく、固体撮像素子の
小型化に伴なうS/N劣化光電変換素子間距離縮小によ
る入射光制限部の開口面積による光の回折効果による周
波数特性劣化を防ぐという優れた効果が得られる。
As described above, according to the present invention, the S / N deterioration due to the miniaturization of the solid-state image pickup device and the incident light due to the reduction of the distance between the photoelectric conversion devices without reducing the continuity of the signal accumulation time and the accumulation time. An excellent effect of preventing frequency characteristic deterioration due to the light diffraction effect due to the opening area of the restricting portion can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態1における固体撮像装置の
構成を示すブロック図
FIG. 1 is a block diagram illustrating a configuration of a solid-state imaging device according to Embodiment 1 of the present invention.

【図2】同実施の形態における固体撮像素子の構成を示
す模式図
FIG. 2 is a schematic diagram illustrating a configuration of a solid-state imaging device according to the embodiment;

【図3】同実施の形態における固体撮像装置の動作を示
すタイミングチャート
FIG. 3 is a timing chart showing an operation of the solid-state imaging device according to the embodiment;

【図4】本発明の実施の形態2における固体撮像装置の
構成を示すブロック図
FIG. 4 is a block diagram illustrating a configuration of a solid-state imaging device according to Embodiment 2 of the present invention;

【図5】同実施の形態における固体撮像装置の動作を示
すタイミングチャート
FIG. 5 is a timing chart showing the operation of the solid-state imaging device according to the embodiment;

【図6】従来の固体撮像装置の構成を示すブロック図FIG. 6 is a block diagram illustrating a configuration of a conventional solid-state imaging device.

【図7】従来の固体撮像部の動作を示すタイミングチャ
ート
FIG. 7 is a timing chart showing the operation of a conventional solid-state imaging unit.

【符号の説明】[Explanation of symbols]

1 入射光制限部 2 固体撮像素子 3 入射光制御部 4 加算演算部 5 信号処理部 6 入力演算部 7 素子駆動部 8 駆動制御部 16 入力選択演算部 REFERENCE SIGNS LIST 1 incident light limiting unit 2 solid-state imaging device 3 incident light control unit 4 addition operation unit 5 signal processing unit 6 input operation unit 7 element drive unit 8 drive control unit 16 input selection operation unit

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 光信号を電気信号に変換する固体撮像素
子と、一垂直走査期間中に前記固体撮像素子から複数回
電気信号を出力するよう駆動する素子駆動手段と、前記
固体撮像素子への入射光を制限する入射光制限手段と、
前記固体撮像素子の出力に応じて前記入射光制限手段を
制御する入射光制御手段と、前記固体撮像素子から一垂
直走査期間中に複数回出力される電気信号を加算し平均
する加算演算手段と、前記加算演算手段の演算結果に基
づき前記入射光制御部を制御する入力演算手段とを備え
たことを特徴とする固体撮像装置。
A solid-state imaging device that converts an optical signal into an electric signal; an element driving unit that drives the solid-state imaging device to output an electric signal a plurality of times during one vertical scanning period; Incident light limiting means for limiting incident light;
Incident light control means for controlling the incident light limiting means according to the output of the solid-state imaging device, and addition arithmetic means for adding and averaging electric signals output a plurality of times during one vertical scanning period from the solid-state imaging device, A solid-state imaging device, comprising: input calculation means for controlling the incident light control section based on a calculation result of the addition calculation means.
【請求項2】 光信号を電気信号に変換する固体撮像素
子と、一垂直走査期間中に前記固体撮像素子から複数回
電気信号を出力するよう駆動する素子駆動手段と、前記
固体撮像素子への入射光を制限する入射光制限手段と、
前記固体撮像素子の出力に応じて前記入射光制限手段を
制御する入射光制御手段と、前記固体撮像素子から一垂
直走査期間中に複数回出力される電気信号を加算し平均
する加算演算手段と、前記固体撮像素子から出力される
複数の電気信号のうち一方の電気信号のみを選択して演
算し前記入射光制御部を制御する入力選択演算手段とを
備えたことを特徴とする固体撮像装置。
2. A solid-state imaging device for converting an optical signal into an electric signal; an element driving unit for driving the solid-state imaging device to output an electric signal a plurality of times during one vertical scanning period; Incident light limiting means for limiting incident light;
Incident light control means for controlling the incident light limiting means according to the output of the solid-state imaging device, and addition arithmetic means for adding and averaging electric signals output a plurality of times during one vertical scanning period from the solid-state imaging device, A solid-state imaging device, comprising: input selection operation means for selecting and calculating only one of the plurality of electric signals output from the solid-state imaging element and controlling the incident light control unit. .
JP10352725A 1998-12-11 1998-12-11 Solid-state image pickup device Pending JP2000184290A (en)

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Application Number Priority Date Filing Date Title
JP10352725A JP2000184290A (en) 1998-12-11 1998-12-11 Solid-state image pickup device

Publications (1)

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JP2000184290A true JP2000184290A (en) 2000-06-30

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008113113A (en) * 2006-10-30 2008-05-15 Fujifilm Corp Solid-state imaging device and driving method
JP2008252814A (en) * 2007-03-30 2008-10-16 National Univ Corp Shizuoka Univ Solid-state imaging device and driving method thereof
JP2008306297A (en) * 2007-06-05 2008-12-18 Canon Inc Imaging apparatus and imaging method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008113113A (en) * 2006-10-30 2008-05-15 Fujifilm Corp Solid-state imaging device and driving method
JP2008252814A (en) * 2007-03-30 2008-10-16 National Univ Corp Shizuoka Univ Solid-state imaging device and driving method thereof
JP4644825B2 (en) * 2007-03-30 2011-03-09 国立大学法人静岡大学 Solid-state imaging device and driving method thereof
JP2008306297A (en) * 2007-06-05 2008-12-18 Canon Inc Imaging apparatus and imaging method

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