JP2000138381A - Sealed container and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the drop of degree of vacuum caused by the occurrence of oxygen, and also, prevent the transformation caused by the difference of thermal expansion coefficient, by making the silicon film made by film formation technique a space regulating member. SOLUTION: A sealed container 14 is made on the center of a substrate 10. The sealed container 14 is constituted by stacking silicon films 26a, 28a, 30a, and 32 as space stipulating members on the substrate 10 by film formation technique. In this constitution, the silicon films 26a, 28a, and 30a constitute a side face part 13, and the silicon film 32 constitutes a topside part. Then, these side face part 13 and topside part 15 stipulate a space part. According to this constitution, since the silicon films 26a, 28a, 30a, and 32 are made as the side face part 13 and the topside part 15 of the sealed container 14 made by film formation technique, anode junction becomes needless. Accordingly, this can prevent the drop of degree of vacuum caused by the generation of oxygen, and also can prevent the transformation of the sealed container 14 caused by the difference of thermal expansion coefficient.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a closed container and a method for manufacturing the same.

[0002]

2. Description of the Related Art A vibration type semiconductor sensor is a sensor that measures a specific physical quantity (force, weight, acceleration, pressure, etc.) by utilizing the effect that the natural frequency of a vibrator changes due to a change in physical quantity. This sensor is used in a state where it is placed in a closed container in order to accurately vibrate the vibrator. The closed container is used under a low pressure or vacuum depending on the application.

FIG. 51 is a schematic view of a conventional closed container in which a vibration type semiconductor sensor is arranged. Such a closed container is disclosed in JP-A-10-213441. The sealed container 500 has a structure in which the space forming member 502 is joined on the semiconductor chip 504. Closed container 5
00 will be described in detail.

The semiconductor chip 504 has a structure in which a vibration type semiconductor sensor 506 is formed on a silicon substrate. The wiring layer 508 is formed in the silicon substrate. The wiring layer 508 is an impurity region formed in the silicon substrate. An electrode 510 is formed on the silicon substrate. One end of the wiring layer 508 is electrically connected to the vibration type semiconductor sensor 506. Wiring layer 50
The other end of 8 is electrically connected to electrode 510.

The space forming member 502 has a structure in which a concave portion 512 is formed on the surface of a silicon substrate. Recess 51
The space portion forming member 502 is joined onto the semiconductor chip 504 with the 2 facing the semiconductor chip 504.
As a result, a space 514 is formed. The vibration type semiconductor sensor 506 is located in the space 514.

The space forming member 502 and the semiconductor chip 50
4 will be described. Space forming member 50
A binder glass 516 is arranged between the edge of the second and the semiconductor chip 504. These are heated to the bonding temperature under a reduced pressure atmosphere, and a voltage of, for example, 1000 V is applied between the space forming member 502 and the semiconductor chip 504.
As a result, the space portion forming member 502 is
4 is joined. This bonding is called anodic bonding.

[0007]

In the anodic bonding, oxygen is generated from the binder glass 516 during the anodic bonding. Thereby, the degree of vacuum of the sealed container 500 decreases.

The thermal expansion coefficient of the semiconductor chip 504 is the same as that of the space forming member 502. However, the coefficient of thermal expansion of the binder glass 516 is different from those of them. Therefore, the closed container 500 may be deformed. As a result, the performance of the semiconductor element disposed in the closed container 500 may be deteriorated.

Further, the flatness of the joint surface between the space forming member 502 and the semiconductor chip 504 needs to be flat at the atomic level. For this reason, the wiring that goes out of the space 514 must be formed in the silicon substrate, not on the silicon substrate of the semiconductor chip 504.
That is, an impurity region such as the wiring layer 508 must be used as a wiring. However, in this wiring, the capacitance of the pn junction between the impurity region and the silicon substrate functions as a parasitic capacitance. Further, the length of the wiring is required to be several hundred μm. The length of the wiring further increases the parasitic capacitance. When the parasitic capacitance of the wiring increases, the performance of the semiconductor element disposed in the closed container 500 is deteriorated. For example, in the case of a sensor,
Noise is generated and the accuracy of the sensor deteriorates.

The present invention has been made to solve such a conventional problem. An object of the present invention is to provide a sealed container capable of preventing a degree of vacuum from being reduced and a method for manufacturing the same.

Another object of the present invention is to provide a sealed container capable of preventing deformation and a method for manufacturing the same.

Still another object of the present invention is to provide a sealed container capable of reducing the parasitic capacitance of wiring and a method for manufacturing the same.

[0013]

Means for Solving the Problems (Closed Container) A closed container according to the present invention is a closed container formed on a substrate,
A space defining member having an upper surface and a side surface and defining a space of the closed container is formed on the substrate. And
The space defining member has a structure in which silicon films formed by a thin film forming technique are stacked.

In the present invention, a silicon film formed by a thin film forming technique is used as a space defining member. Therefore,
Anodic bonding becomes unnecessary. Therefore, according to the present invention, it is possible to solve the problem of the degree of vacuum reduction due to the generation of oxygen and the problem of the deformation of the sealed container due to the difference in thermal expansion coefficient.

In the present invention, the silicon film is defined as
A film composed of only silicon or a film containing silicon as a main component. Further, the silicon film may be single crystal, polycrystal, or amorphous. Thin film formation technology refers to CVD and PV
D is a technique for forming a film. In addition, closed container,
Depending on the application, it is used under vacuum, reduced pressure, increased pressure and normal pressure. The following silicon film, thin film forming technology, and closed container also have this meaning.

In the present invention, it is preferable that the tensile internal stress of the silicon film is controlled and used according to the application. For example, in order to prevent deformation or destruction due to a pressure difference from the outside, a tensile internal stress is generated on the upper surface to such an extent that the deformation or destruction is prevented. On the side surface, the tensile internal stress is set to a value close to 0, preferably 0, so as not to affect the performance of the semiconductor element arranged in the space.

When the silicon film is formed using Si ₂ H ₆ , it is possible to control the internal tensile stress. More specifically, the value of the tensile internal stress can be controlled by the crystallization heat treatment temperature and the presence or absence of impurities. At a relatively low temperature (for example, 580 ° C.), SiH ₄
Also, when a silicon film is formed by using, a tensile internal stress is generated in the silicon film. Therefore, also in this case, it is considered that the tensile internal stress of the silicon film can be controlled.

In the present invention, it is preferable that a wiring film is disposed in the space, and the wiring film is exposed to the outside from the side surface. According to the present invention, the space defining member is formed by the thin film forming technique. Therefore, the wiring film can also be formed by the thin film forming technique. Therefore, it is not necessary to use the impurity region formed in the substrate as a wiring, and the parasitic capacitance of the wiring can be reduced. When the wiring film is drawn out from the side portion, it is preferable that the distance between the substrate and the wiring film is as large as possible. This is because the parasitic capacitance between the substrate and the wiring film can be reduced.

If the wiring film is formed in the same step as the step of forming the space defining member, the same film as the sacrificial film used for forming the space can be located between the substrate and the wiring film. When the sacrificial film is removed to form the space, this film is also removed. Therefore, the wiring film floats outside. Such a wiring can reduce the parasitic capacitance between the wirings.

The wiring film is not floated outside,
It may be supported by an insulating film.

In the present invention, it is preferable that a column is provided in the space and supports the upper surface. This allows
The strength of the upper surface portion is reinforced, and the upper surface portion can be prevented from being deformed or broken by a pressure difference with the outside. The column can be formed by the same process as the space defining member forming process.

(Sealed Vessel Where Vibration-Type Semiconductor Sensor is Arranged) As a usage mode of the closed vessel according to the present invention, there is provided a mode in which a vibration-type semiconductor sensor for measuring a specific physical quantity by vibrating a vibrator is disposed. is there.

The space defining member has a structure in which silicon films formed by a thin film forming technique are laminated. For this reason,
If the material of the components of the vibration type semiconductor sensor is silicon, the space defining member can be formed at the same time as the vibration type semiconductor sensor is formed on the substrate. Therefore, according to the present invention, it is possible to simplify the manufacturing and reduce the manufacturing cost.

If the coefficient of thermal expansion of the material of the components of the vibration type semiconductor sensor is different from the coefficient of thermal expansion of the material of the closed container, stress is applied to the sensor when the sensor is used under conditions where temperature changes occur. I do. This is because the degree of expansion and contraction of the closed container and the degree of expansion and contraction of the sensor are different. Due to this stress, for example, the parallelism between the lower electrode and the vibrator or the parallelism between the upper electrode and the vibrator decreases, that is, the degree of non-parallelism increases. As a result, the zero point of the sensor may fluctuate or noise may occur, which may degrade the performance of the sensor. In the present invention, if the components of the vibration type semiconductor sensor are formed of a silicon film, the coefficient of thermal expansion of the sealed container and that of the sensor are the same. For this reason, even if the sensor is used under conditions where a temperature change occurs, the above-mentioned stress does not act on the sensor. According to this, the parallelism between the lower electrode and the vibrator and the parallelism between the upper electrode and the vibrator are substantially determined only by the nonuniformity of the thickness of the sacrificial film formed therebetween. Therefore, the parallelism can be made high, that is, close to parallel.

In the present invention, it is preferable to control the tensile internal stress of the silicon film in accordance with the intended use.
For example, in order to prevent deformation of the sensor at the electrodes (upper electrode, vibrator electrode, etc.) and side surfaces of the sensor, the tensile internal stress is set to a value close to 0, preferably 0. Also,
In the upper surface portion, in order to prevent deformation and destruction due to a pressure difference from the outside, a tensile internal stress is generated to such an extent as to prevent these. The control method is the same as that described for (closed container).

(Manufacturing Method of Closed Container) A method of manufacturing a closed container according to the present invention is a method of manufacturing a closed container formed on a substrate, wherein a silicon film formed by a thin film forming technique is laminated. And a space defining member for defining the space of the sealed container.

According to the method for manufacturing a sealed container according to the present invention, the silicon film formed by the thin film forming technique is used as the space defining member. Therefore, anodic bonding becomes unnecessary. Therefore, according to the present invention, it is possible to solve the problem of the degree of vacuum reduction due to the generation of oxygen and the problem of the deformation of the sealed container due to the difference in thermal expansion coefficient.

In the method for manufacturing a sealed container according to the present invention, the above-mentioned silicon film is formed using Si ₂ H ₆ or formed at a relatively low temperature.
It is preferable to use iH ₄ . The effect of this is as described for (closed container).

The method for manufacturing a closed container according to the present invention is a method for manufacturing a closed container and a vibration type semiconductor sensor in the same process. The method for producing a closed container according to the present invention comprises the steps of (a)
Forming a first silicon film to be a part of the side surface of the space defining member on the substrate; and (b) forming a first layer on the substrate so as to cover the first silicon film. When,
(C) removing the first layer at the position where the side surface portion is arranged, and patterning the first layer so that the first layer remains under the region where the vibrator is arranged; , (D)
A step of burying a second silicon film in a position to be a side portion and forming a second silicon film on the first layer;
(E) a step of etching the second silicon film by a method such as CMP to make it thinner, and (f) a step of patterning the second silicon film on a part of a side surface portion and a vibrator;
(G) a step of forming a third silicon film to be an upper surface of the space defining member on the substrate; and (h) a step of removing the first layer to form a space.

As a more preferable method than the above method,
(I) forming a first silicon film to be a part of the side surface of the space defining member on the substrate; and (j) forming a first layer on the substrate so as to cover the first silicon film. Forming, and (k) removing the first layer at the position where the side surface portion is disposed so as to remain at an interval, and leaving the first layer below the region where the vibrator is disposed. Patterning the first layer, (l) forming a second silicon film so as to cover the first layer, and (m) forming the second silicon film on one side surface. Patterning the part and the vibrator, (n) forming a third silicon film to be the upper surface of the space defining member on the substrate, and (o) removing the first layer to form a space. Forming a portion.

In the method of steps (a) to (h), it is necessary to embed the second silicon film in the position to be the side surface, so that the second silicon film is deposited thicker and the second silicon film is deposited. Is etched and thinned to form a vibrator. This will be specifically described using numerical values. These numerical values are examples for understanding the present invention. The thickness of the first layer is 2.0 μm
Then, by setting the thickness of the second silicon film to 4.0 μm, the second silicon film is buried in the position to be the side surface. Then, the second silicon film is etched by a thickness of 2.0 μm to form an oscillator having a thickness of 2.0 μm.

At this time, the uniformity of the thickness of the second silicon film is about 4.0 μm ± 0.4 μm at the time of deposition, and 2.0 μm ± 0.2 at the time of etching.
It is about μm. Therefore, finally, the uniformity of the thickness of the second silicon film is set to 2.0 μm ± 0.6 μm.
About. Since the thickness of the second silicon film determines the resonance frequency of the vibrator, the poor uniformity of the thickness may significantly deteriorate the performance of the sensor.

In the method of the steps (i) to (o), the first layer at the position where the side surface portion is disposed is removed so as to remain at an interval (for example, a lattice shape or a stripe shape). Patterning). Therefore, at the time of depositing the second silicon film, the second silicon film enters a gap between the first layers. Therefore, the step of depositing the second silicon film thicker and etching the second silicon film to be thinner is not required. Therefore, the process of forming the vibrator can be simplified, and the in-plane uniformity of the film thickness of the vibrator can be improved.

That is, for example, when the thickness of the first layer is 2.
When the thickness is set to 0 μm, the second silicon film enters the gap between the first layers. Therefore, even if the thickness of the second silicon film is 2.0 μm, the second silicon film can be embedded in a position to be a side surface portion. . Therefore, the step of depositing the second silicon film thicker and etching it to make it thinner becomes unnecessary. Therefore, about 2.0 μm at the time of deposition plus or minus 0.2 μm becomes the final uniformity of the thickness of the second silicon film.
According to the method of the above steps (a) to (h), 2.0 μm
m +/− 0.6 μm, so the steps (i) to
In the method of step (o), the in-plane uniformity of the thickness of the vibrator can be improved.

The width of the gap between the first layers is preferably not more than twice the thickness of the second silicon film. By doing so, the second silicon film can be buried in the gap without causing a step on the side surface.

The method for manufacturing a closed container according to the present invention is a method for manufacturing only a closed container. The method for manufacturing a sealed container according to the present invention includes: (A) a step of forming a first silicon film to be a part of a side surface portion of a space defining member on a substrate; and (B) covering the first silicon film. Forming the first layer on the substrate, and (C) forming the first layer at the position where the side surface is disposed.
Removing the first layer and patterning the first layer so that the first layer at the position serving as the space remains.
(D) a step of forming a second silicon film on the substrate so that the second silicon film is buried in a position to be a side surface, and (E) etching of the second silicon film by a method such as CMP. Removing the second silicon film at a position to be a space portion and forming a side surface portion made of the second silicon film; and (F) forming a third portion to be an upper surface portion of the space portion defining member.
Forming a silicon film on a substrate;
Forming a space portion by removing the layer of.

As a more preferable method than the above steps (A) to (G), (H) a step of forming a first silicon film to be a part of the side surface of the space defining member on the substrate;
Forming a first layer on the substrate so as to cover the first silicon film; and (J) removing the first layer at a position where the side surface portion is disposed at intervals (for example, a grid Patterning the first layer so that the first layer is located at a position to be a space portion, and (K) the substrate is formed so as to cover the first layer. Second on
(L) removing the second silicon film located at a position to be a space portion and forming a side portion made of the second silicon film; and (M) defining a space portion. A step of forming a third silicon film to be an upper surface of the member on the substrate; and (N) a step of forming a space by removing the first layer.

[0038]

DESCRIPTION OF THE PREFERRED EMBODIMENTS [First Embodiment] {Description of External Structure} FIG. 1 is a three-dimensional view of a vibration-type semiconductor sensor using a closed container according to a first embodiment of the present invention. . FIG. 2 is a three-dimensional view showing a state in which the vibration type semiconductor sensor can be seen. This vibration type semiconductor sensor is a yaw rate sensor, that is, a sensor for measuring an angular velocity.

Referring to FIGS. 1 and 2, an insulating film 1 made of a silicon nitride film is formed on the entire surface of a substrate 10 made of silicon.
2 are formed. An airtight container 14 is formed on a central portion of the substrate 10. The sealed container 14 has a structure in which silicon films 26a, 28a, 30a, and 32 are laminated on the substrate 10, and the silicon films 26a, 28a, 30a,
32 is an example of a space defining member. Silicon film 26
a, 28a, and 30a constitute the side surface portion 13, and the silicon film 32 constitutes the upper surface portion 15. A vibration type semiconductor sensor 34 is arranged in the closed container 14.

The closed container 14 has four side portions.
The wiring portion 16 is drawn out from the first side surface portion.
The wiring portion 16 is formed on the insulating film 12 by the silicon films 26b and 28
b and 30b are laminated. The wiring portions 20 and 22 are drawn out from the second side portion facing the first side portion. The wiring section 20 has a structure in which silicon films 26d, 28d, and 30d are stacked on the insulating film 12.
The wiring section 22 also has a structure in which three silicon films are stacked on the insulating film 12. From the third side portion, the wiring portion 18
Has been pulled out. The wiring section 18 has a structure in which silicon films 26c, 28c, and 30c are stacked on the insulating film 12. The wiring part 24 is drawn out from the fourth side part facing the third side part. The wiring part 24 is made of the insulating film 1
2 has a structure in which silicon films 26e, 28e, and 30e are stacked.

{Description of Planar Structure} FIG. 3 shows a first embodiment of the present invention.
It is a top view of the vibration type semiconductor sensor using the closed container concerning an embodiment. The structure of FIG. 3 will be described in order from the lower layer with reference to FIGS.

Referring to FIG. 4, wiring portion 2 is provided on substrate 10.
2 and a lower electrode 36 electrically connected thereto. The lower electrode 36 is made of a silicon film. An extraction electrode 38 made of aluminum is formed on an end of the wiring portion 22.

Referring to FIG. 5, a vibrating body electrode 40 serving as a vibrator is formed at a position on lower electrode 36 shown in FIG. The four corners of the vibrating body electrode 40 are held by four holding portions 42, 44, 46, 48 formed on the substrate 10. Thus, the vibrating body electrode 40 is a fixed beam. Vibrating body electrode 40 and holding portions 42, 44,
46 and 48 are made of a silicon film. The holding section 42 is a part of the wiring section 20. An extraction electrode 50 made of aluminum is formed on the wiring section 20.

Referring to FIG. 6, upper electrode 52 is formed at a position on vibrator electrode 40 shown in FIG. The upper electrode 52 is held by the wiring section 16 formed on the substrate 10. Thus, the upper electrode 52 is cantilevered. The upper electrode 52 is made of a silicon film. The upper electrode 52 and the wiring section 16 are electrically connected. An extraction electrode 54 made of aluminum is formed on an end of the wiring portion 16.

Referring to FIG. 3, lower electrode 3 is arranged in order from the bottom.
6. The fixed electrode 5 sandwiches the structure in which the vibrating body electrode 40 and the upper electrode 52 are arranged so as to be spaced apart and overlap each other.
6, 58 are located. The fixed electrodes 56 and 58 are held by the wiring portions 18 and 24 formed on the substrate 10, respectively. Thereby, the fixed electrodes 56 and 58
Is a cantilever. The fixed electrodes 56 and 58 are made of a silicon film. The fixed electrodes 56 and 58 are electrically connected to the wiring portions 18 and 24, respectively. Wiring unit 1
On electrodes 8 and 24, extraction electrodes 60 and 62 made of aluminum, respectively, are formed.

The side portion 13 is formed so as to surround the lower electrode 36, the vibrating body electrode 40, the upper electrode 52, and the fixed electrodes 56 and 58. At four corners in the closed container 14, pillars 64, 66, 68, and 70 made of a silicon film are arranged. The pillar portions 64, 66, 68, 70 support the upper surface portion 15 of the closed container 14 shown in FIG.

{Description of Cross-Sectional Structure} FIG. 7 is a cross-sectional view of the vibration type semiconductor sensor shown in FIG. 3 taken along the line AA. An insulating film 12 is formed on the substrate 10.
A closed container 14 is formed on the insulating film 12. Side portion 13 of sealed container 14 (silicon films 26a, 28a,
30a) and the upper surface 15 (silicon film 32) define a space 74.

In the space 74, the vibrating body electrode 40 and the upper electrode 52 are arranged. The vibrating body electrode 40 includes the holding unit 4
8. It is held by the wiring section 20. Wiring unit 20
Are drawn out from the side surface 13. Wiring unit 2
Numeral 0 is electrically insulated and separated from the closed container 14 by the insulating films 12 and 72. Polycrystalline silicon films 76 and 78 are formed on upper surface portion 15. The role of the polycrystalline silicon films 76 and 78 will be described later.

FIG. 8 is a sectional view of the vibration type semiconductor sensor shown in FIG. 3 taken along the line BB. On the insulating layer 12 in the space 74, the lower electrode 36, the vibrating body electrode 40, and the upper electrode 52 are located at an interval from the bottom.
Fixed electrodes 56 and 58 are arranged on both sides of the vibrating body electrode 40. The fixed electrodes 56 and 58 are respectively connected to the wiring section 1
8 and 24. Wiring parts 18, 24
Are drawn out from the side surface 13. Wiring unit 1
8 and 24 are sealed containers 14 by the insulating films 12 and 72.
And electrically isolated.

An opening 80 is formed in the upper surface 15. A polycrystalline silicon film 76 is formed on upper surface 15 so as to cover opening 80. The polycrystalline silicon film 76 functions as a porous permeable film. That is, when the sacrificial film is melted to form the space 74, the etchant is brought into contact with the sacrificial film via the porous permeable film. By forming the polycrystalline silicon film 78 on the polycrystalline silicon film 76 at the opening 80, the sealed container 14 is sealed.

FIG. 9 is a sectional view of the vibration type semiconductor sensor shown in FIG. 3 taken along the line CC. FIG. 10 is a cross-sectional view of the vibration-type semiconductor sensor shown in FIG. 3 taken along the line DD. The wiring portions 18 and 24 are each covered with an insulating film 72 to insulate and separate from the sealed container 14.

FIG. 11 is a sectional view of the vibration type semiconductor sensor shown in FIG. 3 taken along the line EE. Pillar 64,
Reference numeral 66 denotes a portion supporting the upper surface portion 15.
The pillar portions 64 and 66 have a structure in which four silicon films are stacked. The lower three layers are formed at the same time when the side surface portion 13 is formed. The upper layer is formed at the same time when the upper surface portion 15 is formed.

{Description of Operation} This vibration type semiconductor sensor is a sensor for measuring an angular velocity. Referring to FIG.
A voltage is alternately applied to the fixed electrodes 56 and 58 to vibrate the vibrating body electrode 40 in a direction parallel to the main surface of the substrate 10, that is, in a direction indicated by a. When the sensor rotates in this state, a vertical force is applied to the vibrating body electrode 40. Thereby, the capacitance between the lower electrode 36 and the vibrating body electrode 40 and the upper electrode 5
2 and the capacitance of the vibrating body electrode 40 change. Based on this, the angular velocity is detected.

<< Description of Manufacturing Method >> A method of manufacturing a vibration-type semiconductor sensor using a sealed container according to the first embodiment of the present invention will be described with reference to FIGS. (A) of each drawing shows a manufacturing process of the AA cross section of FIG. 3, (b)
Shows a manufacturing process of the BB cross section of FIG.

Referring to FIG. 12, insulating film 12 of substrate 10 is formed.
A silicon film having a thickness of 0.2 μm is formed thereon by using, for example, a CVD method. The silicon film is patterned by, for example, photolithography to form a wiring portion forming region 82,
84, 86, holding part forming area 88, side part forming area 9
0, the silicon film 26
d, 26e, 26c, 26f, 26a, 26g are left.
The silicon film 26g becomes the lower electrode 36.

Referring to FIG. 13, silicon films 26d, 2d
6e, 26c, 26f, 26a, 26g,
An insulating film 94 made of a silicon oxide film and having a thickness of 2.0 μm is formed on the substrate 10 by using, for example, a CVD method.

Referring to FIG. 14, insulating film 94 is patterned by, for example, photolithography. By this patterning, the electrode forming regions 92 and 96 and the region 9
8 (between the holding portion forming region 88 and the side portion forming region 90)
Then, the insulating film 94 is left.

Referring to FIG. 15, on the entire surface of substrate 10,
For example, a silicon film 28 having a thickness of 4.0 μm is formed by using the CVD method. In order to bury the silicon film 28 in the region where the insulating film 94 has been removed, a thick silicon film (4.0
μm).

Referring to FIG. 16, silicon film 28 is cut to a thickness of 2.0 μm by using the CMP method.

Referring to FIG. 17, silicon film 28 is patterned by, for example, photolithography. By this patterning, the wiring portion forming regions 82, 84,
At 86, the silicon films 28d, 28e and 28c are left. In addition, this patterning allows the electrode formation regions 92 and 9 to be formed.
6, the vibrating body electrode 40 and the fixed electrodes 56 and 58 are formed.
In addition, this patterning allows the side surface forming region 90 to be formed.
The silicon film 28a is left.

Steps similar to those described above (forming the insulating film 94, patterning the insulating film 94, forming the silicon film 28, CMP,
The silicon films 30d, 30e, and 30c are formed in the wiring portion forming regions 82, 84, and 86 by the silicon film 28
Leave. Further, the upper electrode 52 is provided in the electrode forming regions 92 and 96.
To form Further, the silicon film 3 is formed on the side surface forming region 90.
Leave 0a. Further, the holding section 48 is completed. In addition, 10
Reference numeral 0 denotes an insulating film made of a silicon oxide film.

Referring to FIG. 18, for example, a 4.0 μm thick insulating film 102 made of a silicon oxide film is formed by using the CVD method. The insulating film 102 is shaved by a CMP method, the thickness of the insulating film 102 is set to 2.0 μm, and the insulating film 102 is left in a region where a closed container is formed. For example, an insulating film 72 made of a silicon oxide film or a silicon nitride film is formed and patterned, and the insulating film 72 is left on the side surface portion 13. For example, a silicon film having a thickness of 4.0 μm is formed by using the CVD method, and is patterned to form the upper surface portion 15.

Referring to FIG. 19, an opening 80 is formed in upper surface 15 by using, for example, photolithography.
On the upper surface portion 15 so as to cover the opening 80, for example, C
An amorphous silicon film is formed by using the VD method. The amorphous silicon film is heated and crystallized to form a polycrystalline silicon film 7.
Make 6

Referring to FIG. 20, polycrystalline silicon film 76 is annealed in the presence of POCl ₃ vapor and oxygen.
As a result, a large number of through holes 106 are formed in the thickness direction of the polycrystalline silicon film 76. The reason is as follows. By this annealing, phosphorus and oxygen are doped into the polycrystalline silicon film 76, and the growth of crystal grains in the polycrystalline silicon film 76 is activated. Thus, it is considered that a defect aggregation layer, a layer of the silicon-phosphorus-oxygen compound segregated at the grain boundary, and a through-hole are formed at the grain boundary of the polycrystalline silicon film 76.

The diameter of this through hole is larger than the diameter of the through hole formed by a naturally occurring defect at the crystal grain boundary of polycrystalline silicon. Therefore, the porous permeable film (polycrystalline silicon film 76) manufactured in the first embodiment has a higher permeability than the conventional permeable film, and transmits, for example, an etchant containing hydrofluoric acid with high efficiency. It has a function to do. Further, in a portion other than the region where the through-hole is formed, crystal grains and crystal grain boundaries with few defects are formed. For example, when used as a film that transmits hydrofluoric acid, a porous permeable film excellent in hydrofluoric acid resistance is used. Becomes

Returning to the description of the manufacturing process. After annealing,
The diameter of the through hole 106 is increased by wet cleaning, for example, alkali cleaning of the through hole 106. Examples of the alkali cleaning applicable to the first embodiment include cleaning using ammonia, hydrogen peroxide, and water.

Next, the structure shown in FIG. 20 is immersed in hydrofluoric acid. The hydrofluoric acid passes through the through hole 106 and passes through the insulating films 94, 10
Contact 0, 102 and melt. Melted insulating film 94, 10
By putting 0, 102 out of the through hole 106,
As shown in FIG. 21, a space 74 is formed. Insulating film 7
2 is not removed by this etching because the width W of the insulating film 72 is sufficiently larger than the etching amount of the silicon oxide film. If the material of the insulating film 72 is a material that is not easily etched by hydrofluoric acid (for example, a silicon nitride film, a fluorine resin, or non-doped silicon), the insulating film 72 can be left.

Referring to FIGS. 7 and 8, for example, a decompression CV
A polycrystalline silicon film 78 is formed on the polycrystalline silicon film 76 so as to cover the opening 80 by using D or plasma CVD. Thereby, the closed container 14 is sealed. As a reaction gas, for example, SiH ₄ gas is used. Through the steps described above, the vibration type semiconductor sensor using the closed container according to the first embodiment of the present invention is completed.

{Description of Porous Permeable Membrane} (Structure of Porous Permeable Membrane) The structure of the porous permeable membrane according to the present invention will be described. The structure of the porous permeable membrane according to the present invention can be specified by the diameter of the through-hole. In other words, it is a through hole having a diameter of 5 nm or more, which cannot be formed by a naturally occurring grain boundary layer as in the conventional example, and a diameter of 180 nm or less, which cannot be formed by current photolithography. is there.

The density of the through holes is also 2 × 10 ^−4.
Pcs / μm ² or more and 10 pcs / μm ² or less. If a through hole exists at or above the lower limit of the density, a cavity can be formed in about 5 minutes when a 100 μm × 100 μm portion of the sacrificial layer is etched. Further, if through holes exist below the upper limit of the density, the portion of the porous permeable membrane that becomes voids is at most 50% or less, and the stress caused by the porous permeable membrane itself and the film laminated thereon is reduced. It can maintain the breaking strength to withstand.

As one method of controlling such a structure, there is a method of changing the crystallization temperature at the time of forming a polycrystalline silicon film serving as a porous permeable film. That is, it was found that increasing the crystallization temperature increases the diameter and density of the through-hole. For example, compared to crystallization at 600 degrees,
In the crystallization at 1000 degrees, both the diameter and the density of the through holes increased about twice.

(Annealing Conditions) POCl_ThreeAnd oxygen
Anneal the polycrystalline silicon film in the existing gas phase
Thereby, the porous permeable membrane according to this embodiment is shaped.
Is done. As the annealing temperature increases and / or
Is due to the longer annealing time,
The supply amount of P to the film increases.

FIG. 22 is a graph showing the relationship between the thickness of the porous permeable membrane and the annealing conditions according to the first embodiment. As can be seen from the graph, the supply amount of P to the polycrystalline silicon film must be increased as the thickness of the porous permeable film increases. That is, the annealing temperature must be high and / or the annealing time must be long.

Each line in the graph shows the minimum annealing condition for obtaining the porous permeable membrane according to the first embodiment. Therefore, if the annealing is performed under the annealing conditions in the region above each line, the porous permeable membrane according to the present invention can be obtained. For example, when the film thickness is 0.1 μm,
Annealing may be performed under the conditions of 1000 degrees and 40 minutes. However, from the viewpoint of the process, it is desirable to anneal at a temperature of about 1100 degrees or less.

The average sectional area S of the through holes and the density D of the through holes can be controlled by the annealing conditions.
That is, S and D increase by increasing the supply amount of P to the polycrystalline silicon film.

{Tensile Internal Stress of Silicon Film} In the first embodiment, the upper surface portion 15 shown in FIG. 1 has a tensile internal stress of such a degree as to prevent deformation or breakage due to a pressure difference from the outside. Is caused. In addition, the tensile internal stress of the side surface portion 13 is set to a value close to 0 so as not to affect the performance of the sensor arranged in the space portion.

FIG. 23 is a graph showing the relationship between the heat treatment temperature for crystallization of the silicon film and the internal stress. The lower the heat treatment temperature for crystallization, the higher the tensile internal stress. Further, when phosphorus is introduced, the tensile internal stress is smaller than when phosphorus is not introduced. Thus, it was found that the value of the tensile internal stress can be controlled by the crystallization heat treatment temperature and the presence / absence of impurity introduction.

Therefore, in the first embodiment, the silicon film forming the upper surface portion 15 and the side surface portion 13 is formed by the following steps. First, the CVD method (at a temperature of 550 to 6
A silicon film is formed using Si ₂ H ₆ gas at 50 degrees.
At this stage, the silicon film is in an amorphous state or a very small crystalline state. Next, heat treatment is performed under the condition of 600 to 1000 degrees to crystallize silicon in the silicon film. During the heat treatment, phosphorus is optionally introduced as an impurity. The tensile internal stress that does not deform the sensor is
It is about 0 to 100 MPa.

<< Explanation of Effects >> (1) Referring to FIG. 1, in the first embodiment, CVD
The silicon film formed by the method is applied to the side 1 of the closed container.
3 and the upper surface 15. Therefore, anodic bonding becomes unnecessary. Therefore, according to the first embodiment, it is possible to solve the problem of the degree of vacuum reduction due to the generation of oxygen and the problem of the deformation of the sealed container due to the difference in the coefficient of thermal expansion.

(2) Referring to FIGS. 1 and 23, in the first embodiment, in order to prevent deformation and destruction due to a pressure difference from the outside, the upper surface 15 is provided with a pull-in inside which prevents such deformation. Causing stress. In addition, the tensile internal stress of the side surface portion 13 is set to a value close to 0 so as not to affect the performance of the sensor arranged in the space portion.

(3) In the first embodiment, a wiring portion (for example, the wiring portion 20 in FIG. 7) is arranged in the space 74, and the wiring portion is exposed to the outside from the side surface portion 13. First
According to the embodiment, the space defining member is formed by the CVD method. For this reason, the wiring portion can also be formed by the CVD method. Therefore, it is not necessary to use the impurity region as a wiring, and the parasitic capacitance of the wiring can be reduced. Incidentally, the capacitance of the pn junction between the impurity region wirings via the silicon substrate is about 10 pF to 100 pF. On the other hand, the parasitic capacitance between the wiring portions is about 10 fF to 100 fF.

(4) In the first embodiment, a pillar (for example, a column)
Column portions 64 and 66 in FIG. 11) are provided. This allows
The strength of the upper surface portion 15 is reinforced, so that the upper surface portion 15 can be prevented from being deformed or broken due to a pressure difference from the outside.

(5) Referring to FIG. 2, in the first embodiment, a space defining member (side surface portion 13, upper surface portion 15)
The components (the lower electrode 36, the vibrating body electrode 40, the upper electrode 52, and the fixed electrodes 56 and 58) of the vibration type semiconductor sensor are formed in the same process. Therefore, according to the first embodiment, it is possible to simplify the manufacturing and reduce the manufacturing cost.

(6) Referring to FIG. 2, in the first embodiment, the space defining member and the components of the vibration type semiconductor sensor are both formed of a silicon film. Therefore, the coefficient of thermal expansion of the sealed container is the same as that of the sensor. For this reason, even if the sensor is used under conditions in which a temperature change occurs, stress caused by a difference in thermal expansion coefficient does not act on the sensor. Therefore, it is possible to prevent the performance of the sensor from deteriorating due to a decrease in the degree of parallelism between the lower electrode and the vibrating body electrode and between the upper electrode and the vibrating body electrode. To put it concretely, the degree of parallelism is almost determined by the thickness distribution of the insulating film (sacrifice film) formed therebetween, and it is necessary to set the thickness of the insulating film to one-tenth or less or 0.1 μm or less. It is possible. Therefore, a highly accurate sensor is obtained.

(7) Referring to FIG. 20, according to the first embodiment, a grain boundary portion serving as through hole 106 for transmission is positively formed, and the diameter of through hole 106 is reduced. It is possible to provide a technique of suppressing the hole density to about 10 nm, which is a level smaller than the fine processing limit of a normal LSI process, and forming the hole with a sufficient density for the permeation of hydrofluoric acid. Therefore, according to the first embodiment,
The sealed container 14 having the space 74 with a desired capacity can be manufactured without breaking the porous permeable film (polycrystalline silicon film 76).

[Second Embodiment] The second embodiment is characterized in that it is not necessary to form a thick silicon film, so that a step of removing the silicon film by CMP or the like can be omitted. FIG. 24 is a sectional view of the second embodiment. This corresponds to FIG. 11 of the first embodiment. FIG.
The description of the same parts as those of 1 is omitted by giving the same reference numerals. The insulating films 108, 110, and 112 at the positions where the side surfaces 13 and the pillars 64 and 66 are arranged are left at intervals.

{Description of Manufacturing Method} Referring to FIG. 25, a 0.2 μm thick silicon film is formed on insulating film 12 of substrate 10 by using, for example, the CVD method. Silicon film,
For example, patterning is performed by photolithography, and the side surface forming regions 114 and 116, the columnar forming regions 118, 1
20 and the silicon film 2 in the electrode formation region 122, respectively.
6h, 26i, 26j, 26k, 26l are left. The silicon film 26l becomes the lower electrode 36.

Referring to FIG. 26, silicon films 26h, 2h
6i, 26j, 26k, 26l
An insulating film 108 having a thickness of 2.0 μm made of a silicon oxide film is formed thereon by using, for example, a CVD method.

Referring to FIG. 27, insulating film 108 is patterned by, for example, photolithography. By this patterning, the electrode formation region 122 and the region 12
4 (between the side surface forming region 114 and the column forming region 118) and the region 126 (between the side surface forming region 116 and the column forming region 120). Further, the side portion forming regions 114 and 116 and the pillar portion forming regions 118 and 1
20, an insulating film 108 is left at intervals.

FIG. 28 is a plan view of the structure shown in FIG. Side surface forming regions 114 and 116 and pillar portion forming region 1
In 18 and 120, the insulating film 108 is left in a lattice shape.

Referring to FIG. 29, on the entire surface of substrate 10,
For example, a silicon film 28 having a thickness of 2.0 μm is formed by using a CVD method. In the side surface forming regions 114 and 116 and the pillar forming regions 118 and 120, the insulating film 108 is left in a lattice shape. Therefore, a thick silicon film (for example, 4.
0 μm), the silicon film 28 can be embedded in these regions.

By repeating the same steps as above,
As shown in FIG. 24, the side part 13 and the pillar parts 64 and 66 are formed. Subsequent steps are the same as in the first embodiment.

FIG. 30 is a sectional view of the second embodiment, and corresponds to FIG. 7 of the first embodiment. Oscillator electrode 4
Insulating films 108, 11
0 is left. Upper electrode 52 and fixed electrodes 56, 5
The insulating films 108 and 110 can also be left in the portion holding 8.

Note that, as shown in FIG.
Are not left in a lattice shape, but as shown in FIG. 31, the side surface forming regions 114 and 116 and the column forming regions 118 and 1 are formed.
In 20, there is a mode in which the insulating film 108 is left in a stripe shape. By patterning the insulating film 108 in this manner, the insulating film 108 can be removed at the time of etching the sacrificial film. Therefore, as shown in FIG. 32, a cavity 128 can be formed in the side surface portion 13 and the pillar portions 64 and 66. Oscillator electrode 40, upper electrode 52 and fixed electrode 5
The cavity 128 can also be formed in the portion that holds 6, 58.

{Explanation of Effect} The second embodiment is based on the first embodiment.
Embodiments (1) to (7) have the effects. further,
The second embodiment has the following effects.

(1) For example, referring to FIGS. 27 to 29, in the second embodiment,
The silicon oxide films 108, 110, and 112 in the region 16 and the pillar portion forming regions 118 and 120 are left at intervals. For this reason, when depositing the silicon film for forming the side surface portion 13 and the pillar portions 64 and 66, the silicon film enters the gaps between the silicon oxide films 108, 110 and 112. Therefore, the step of depositing a thick silicon film and etching the silicon film to make it thinner is not required.

(2) The silicon oxide film is softer than the silicon film. Therefore, in the closed container 14 shown in FIG. 24, the silicon oxide films 108, 110, and 112 have a function of absorbing impact stress acting on the closed container 14. Therefore, the sealed container 14 is strong against impact. Further, in the closed container 14 shown in FIG.
Can absorb impact stress. Therefore, the sealed container 14 is strong against impact.

[Third Embodiment] A feature of the third embodiment is that a sensor for measuring acceleration is arranged in the closed container according to the present invention.

(Explanation of Planar Structure) FIG. 33 is a plan view of a vibration type semiconductor sensor according to the third embodiment of the present invention. This vibration type semiconductor sensor is a sensor for measuring acceleration. The structure of FIG. 33 is described with reference to FIGS.
The description will be made sequentially from the lower layer.

Referring to FIG. 34, a wiring portion 212 and a lower electrode 226 electrically connected thereto are formed on a substrate 200.
Are formed. Wiring section 212 and lower electrode 226
Is made of a silicon film. On the end of the wiring portion 212,
An extraction electrode 228 made of aluminum is formed.

Referring to FIG. 35, a vibrating body electrode 230 serving as a vibrator is formed at a position on lower electrode 226 shown in FIG. The four corners of the vibrating body electrode 230 are
The four holding parts 232, 234, 236 formed on the top,
238. Thus, the vibrating body electrode 230 is a fixed beam. Oscillator electrode 23
0 and the holding portions 232, 234, 236, 238 are made of a silicon film. The holding unit 232 is a part of the wiring unit 210. An extraction electrode 240 made of aluminum is formed on the wiring section 210.

Referring to FIG. 36, upper electrode 242 is formed at a position on vibrator electrode 230 shown in FIG. The upper electrode 242 is held by the wiring part 206 formed on the substrate 200. As a result, the upper electrode 242 is cantilevered. Upper electrode 242
The wiring section 206 is made of a silicon film. Upper electrode 2
42 and the wiring part 206 are electrically connected. An extraction electrode 244 made of aluminum is formed on an end of the wiring portion 206.

Referring to FIG. 33, a side surface portion 203 made of a three-layered silicon film is formed so as to surround lower electrode 226, vibrator electrode 230, and upper electrode 242. Four corners 25 made of a silicon film are provided at the four corners in the closed container 204.
4, 256, 258, 260 are arranged. Pillar 2
54, 256, 258, 260 support the upper surface portion (not shown) of the sealed container 204.

{Description of Cross-Sectional Structure} FIG. 37 is a cross-sectional view of the vibration-type semiconductor sensor shown in FIG. 33, taken along line AA. On the substrate 200, an insulating film 202 is formed. On the insulating film 202, a closed container 204 is formed. Side portion 203 and top portion 2 of closed container 204
At 05, a space 264 is defined.

In the space 264, a lower electrode 226, a vibrating body electrode 230, and an upper electrode 242 are arranged. The vibrating body electrode 230 is held by the holding section 238 and the wiring section 210. The wiring part 210 is drawn out from the side part 203 to the outside. The wiring section 210 is formed of the insulating film 20.
2, 262, electrically insulated from the closed container 204. Polycrystalline silicon films 266 and 268 are formed on upper surface portion 205. Polycrystalline silicon film 2
The function 66 is the function of the polycrystalline silicon film 7 of the first embodiment.
6 has the same function as that of FIG. Also, the polycrystalline silicon film 268
Is the same as the function of the polycrystalline silicon film 78 of the first embodiment.

FIG. 38 is a sectional view of the vibration-type semiconductor sensor shown in FIG. 33, taken along the line BB. Space part 2
On the 64 insulating layers 202, a lower electrode 226, a vibrating body electrode 230, and an upper electrode 242 are located in order from the bottom with an interval. The upper electrode 242 is electrically connected to the wiring section 206 and is cantilevered by the wiring section 206. The wiring part 206 is drawn out from the side part 203 to the outside. The wiring part 206 is formed of the insulating films 202 and 26
2, it is electrically insulated and separated from the closed container 204. The lower electrode 226 is electrically connected to the wiring section 212. The wiring part 212 is drawn out from the side part 203. The wiring portion 212 includes the insulating films 202, 2
62 electrically insulates and separates from the closed container 204.

An opening 270 is formed in the upper surface 205. A polycrystalline silicon film 266 is formed on upper surface portion 205 so as to cover opening 270. By forming the polycrystalline silicon film 268 on the polycrystalline silicon film 266 at the opening 270, the sealed container 204 is sealed.

{Description of Operation} This vibration type semiconductor sensor is a sensor for measuring acceleration. 37 and 38, when acceleration is applied in a direction perpendicular to the main surface of substrate 200, that is, in a direction indicated by a, vibrating body electrode 230
Vibrate in the direction indicated by a. Thereby, the lower electrode 22
6 and vibrator electrode 230 and upper electrode 242
And the capacitance of the vibrating body electrode 230 changes. Based on this, the acceleration is detected.

{Description of Manufacturing Method} The third embodiment is directed to
It can be manufactured by a method similar to the manufacturing method of the first embodiment. That is, the process itself is the same except for the pattern. Also, the second embodiment has the second embodiment.
Embodiment can also be applied.

{Explanation of Effect} The third embodiment is directed to the first embodiment.
This has the effects (1) to (7) of the embodiment. Also,
If the second embodiment is applied, the third embodiment is
It has the effects (1) and (2) of the second embodiment.

[Fourth Embodiment] The feature of the fourth embodiment is that the wiring portion is floating outside.

{Description of Structure} FIG. 39 is a three-dimensional view of a vibration-type semiconductor sensor using an airtight container according to a fourth embodiment of the present invention. FIG. 40 is a sectional view thereof. FIG.
Corresponds to FIG. 1 of the first embodiment, and FIG.
Embodiment 8 corresponds to FIG.

The difference from the first embodiment shown in FIG.
That is, the wiring portions 16, 18, 20, 22, and 24 are floating outside. The other structure is the same as that of the first embodiment, and the description is omitted by attaching the same reference numerals.

<< Description of Manufacturing Method >> A method of manufacturing a vibration-type semiconductor sensor using an airtight container according to the fourth embodiment of the present invention will be described with reference to FIGS. The difference from the first embodiment shown in FIGS.
This is the patterning when forming 24.

The step of FIG. 41 corresponds to the step of FIG. The difference from the process of FIG. 12 is that the silicon films 26c and 26c
This is the point where one end of “e” coincides with the formation position of the side surface portion 13.

The steps shown in FIGS. 42, 43, 44, and 45 correspond to the steps shown in FIGS. 13, 14, 15, and 16, respectively.

The step of FIG. 46 corresponds to the step of FIG. The difference from the process of FIG. 17 is that the silicon films 30c, 30c
This is the point where one end of “e” coincides with the formation position of the side surface portion 13.

The steps of FIGS. 47 and 48 correspond to those of FIG.
This corresponds to steps 8 and 19.

The steps of FIGS. 49 and 50 correspond to the steps of FIGS. The difference is that when the sacrificial films (insulating films 94, 100, 102) are etched using hydrofluoric acid,
And the insulating films 94 and 100 which are located outside the wiring portion and sandwich the wiring portions 18 and 24 are also removed.
Therefore, as shown in FIG. 50, the wiring portions 18 and 24 are floating outside. Finally, as shown in FIG. 40, the opening 80 is sealed with a polycrystalline silicon film 78.

{Explanation of Effect} The fourth embodiment is directed to the first embodiment.
This has the effects (1) to (7) of the embodiment. Also,
If the second embodiment is applied, the fourth embodiment becomes
It has the effects (1) and (2) of the second embodiment. Referring to FIG. 39, in the fourth embodiment, wiring portions 16, 18, 20, 22, and 24 float outside. Such a wiring portion can reduce the parasitic capacitance. For example, when the wiring portion is floating outside, the parasitic capacitance between the wirings becomes 1/4 to 1/10 as compared with the case where the wiring portion is supported by an insulating film.

In the first to fourth embodiments,
The shape of the closed container is a rectangular parallelepiped. However, the present invention is not limited to this, and the upper surface and the substrate may be a polyhedron parallel to each other, or the space defining member may be spherical.

[0122]

[Brief description of the drawings]

FIG. 1 is a three-dimensional view of a vibration-type semiconductor sensor using a closed container according to a first embodiment of the present invention.

FIG. 2 is a three-dimensional view showing a state in which a vibration type semiconductor sensor can be seen in the closed container of FIG. 1;

FIG. 3 is a plan view of the vibration-type semiconductor sensor using the closed container according to the first embodiment of the present invention.

FIG. 4 is a plan view of a lower electrode of the sensor shown in FIG. 3;

FIG. 5 is a plan view of a vibrating body electrode of the sensor shown in FIG. 3;

6 is a plan view of an upper electrode of the sensor shown in FIG.

FIG. 7 is a sectional view of the sensor shown in FIG. 3 taken along line AA.

FIG. 8 is a sectional view of the sensor shown in FIG. 3 taken along line BB.

FIG. 9 is a cross-sectional view of the sensor shown in FIG. 3 taken along line CC.

FIG. 10 is a cross-sectional view of the sensor shown in FIG. 3 taken along line DD.

FIG. 11 is a cross-sectional view of the sensor shown in FIG. 3 taken along line EE.

FIG. 12 is a cross-sectional view showing a first step of a method of manufacturing a vibration-type semiconductor sensor using the closed container according to the first embodiment of the present invention.

FIG. 13 is a cross-sectional view showing a second step of the method of manufacturing the vibration type semiconductor sensor using the closed container according to the first embodiment of the present invention.

FIG. 14 is a cross-sectional view showing a third step of the method for manufacturing the vibration type semiconductor sensor using the closed container according to the first embodiment of the present invention.

FIG. 15 is a cross-sectional view showing a fourth step of the method of manufacturing the vibration type semiconductor sensor using the closed container according to the first embodiment of the present invention.

FIG. 16 is a cross-sectional view showing a fifth step of the method of manufacturing the vibration type semiconductor sensor using the closed container according to the first embodiment of the present invention.

FIG. 17 is a cross-sectional view showing a sixth step of the method of manufacturing the vibration type semiconductor sensor using the closed container according to the first embodiment of the present invention.

FIG. 18 is a cross-sectional view showing a seventh step of the method of manufacturing the vibration type semiconductor sensor using the closed container according to the first embodiment of the present invention.

FIG. 19 is a cross-sectional view showing an eighth step of the method for manufacturing the vibration type semiconductor sensor using the closed container according to the first embodiment of the present invention.

FIG. 20 is a cross-sectional view showing a ninth step of the method for manufacturing the vibration type semiconductor sensor using the closed container according to the first embodiment of the present invention.

FIG. 21 is a cross-sectional view showing a tenth step of the method for manufacturing the vibration type semiconductor sensor using the closed container according to the first embodiment of the present invention.

FIG. 22 is a graph showing a relationship between a film thickness of a porous permeable membrane used in a closed container according to the first embodiment of the present invention and annealing conditions.

FIG. 23 is a graph showing a relationship between a heat treatment temperature for crystallization of a silicon film and an internal stress.

FIG. 24 is a cross-sectional view of a pillar portion of a closed container according to a second embodiment of the present invention.

FIG. 25 is a cross-sectional view showing a first step of the method for manufacturing a sealed container according to the second embodiment of the present invention.

FIG. 26 is a cross-sectional view showing a second step of the method for manufacturing a sealed container according to the second embodiment of the present invention.

FIG. 27 is a cross-sectional view showing a third step of the method for manufacturing a sealed container according to the second embodiment of the present invention.

FIG. 28 is a plan view of the structure shown in FIG. 27.

FIG. 29 is a cross-sectional view showing a fourth step of the method for manufacturing a sealed container according to the second embodiment of the present invention.

FIG. 30 is a cross-sectional view of a vibrating body electrode of a sensor arranged in a closed container according to a second embodiment of the present invention.

FIG. 31 is a plan view showing a pattern of an insulating film in another example of the method for manufacturing a sealed container according to the second embodiment of the present invention.

FIG. 32 is a cross-sectional view of a pillar portion of another example of the closed container according to the second embodiment of the present invention.

FIG. 33 is a plan view of a vibration-type semiconductor sensor using a closed container according to a third embodiment of the present invention.

34 is a plan view of a lower electrode of the sensor shown in FIG.

FIG. 35 is a plan view of a vibrating body electrode of the sensor shown in FIG. 33.

FIG. 36 is a plan view of an upper electrode of the sensor shown in FIG. 33.

FIG. 37 is a sectional view of the sensor shown in FIG. 33, taken along line AA.

38 is a cross-sectional view of the sensor shown in FIG. 33, taken along line BB.

FIG. 39 is a three-dimensional view of a vibration-type semiconductor sensor using an airtight container according to a fourth embodiment of the present invention.

FIG. 40 is a sectional view of a vibration-type semiconductor sensor using a closed container according to a fourth embodiment of the present invention.

FIG. 41 is a cross-sectional view showing a first step in a method for manufacturing a vibration-type semiconductor sensor using a closed container according to the fourth embodiment of the present invention.

FIG. 42 is a cross-sectional view showing a second step of the method of manufacturing the vibration type semiconductor sensor using the closed container according to the fourth embodiment of the present invention.

FIG. 43 is a cross-sectional view showing a third step of the method for manufacturing the vibration type semiconductor sensor using the sealed container according to the fourth embodiment of the present invention.

FIG. 44 is a cross-sectional view showing a fourth step of the method for manufacturing the vibration type semiconductor sensor using the closed container according to the fourth embodiment of the present invention.

FIG. 45 is a cross-sectional view showing a fifth step of the method of manufacturing the vibration type semiconductor sensor using the closed container according to the fourth embodiment of the present invention.

FIG. 46 is a cross-sectional view showing a sixth step of the method of manufacturing the vibration type semiconductor sensor using the closed container according to the fourth embodiment of the present invention.

FIG. 47 is a cross-sectional view showing a seventh step of the method of manufacturing the vibration type semiconductor sensor using the closed container according to the fourth embodiment of the present invention.

FIG. 48 is a cross-sectional view showing an eighth step of the method for manufacturing the vibration type semiconductor sensor using the closed container according to the fourth embodiment of the present invention.

FIG. 49 is a cross-sectional view showing a ninth step of the method for manufacturing a vibration-type semiconductor sensor using the sealed container according to the fourth embodiment of the present invention.

FIG. 50 is a cross-sectional view showing a tenth step of the method for manufacturing a vibration-type semiconductor sensor using the sealed container according to the fourth embodiment of the present invention.

FIG. 51 is a schematic view of a conventional sealed container in which a vibration type semiconductor sensor is arranged.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Substrate 12 Insulating film 13 Side surface part 14 Airtight container 15 Top surface part 16, 18, 20, 22, 24 Wiring part 26a-261 Silicon film 28a-28e Silicon film 30a-30e Silicon film 32 Silicon film 34 Vibration type semiconductor sensor 36 Lower part Electrode 40 Oscillator electrode 42, 44, 46, 48 Holder 52 Upper electrode 56, 58 Fixed electrode 64, 66, 68, 70 Column 72 Insulating film 74 Space 82, 84, 86 Wiring part forming area 88 Holding part formation Region 90 side surface forming region 92 electrode forming region 94 insulating film 96 electrode forming region 98 region 100, 102, 108, 110, 112 insulating film 114, 116 side surface forming region 118, 120 pillar forming region 122 electrode forming region 124, 126 region 128 cavity 200 substrate 202 insulating film 203 side surface 20 4 Closed container 205 Upper surface part 206, 210, 212, Wiring part 226 Lower electrode 230 Vibrator electrode 232, 234, 236, 238 Holding part 242 Upper electrode 254, 256, 258, 260 Column part 262 Insulating film 264 Space part

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Jiro Sakata 41-41, Chuchu-Yokomichi, Nagakute-cho, Aichi-gun, Aichi Prefecture Inside Toyota Central R & D Laboratories Co., Ltd. 41, Yokomichi, 1st place, Toyota Central Research Laboratory Co., Ltd. F-term (reference) 4M112 AA02 BA07 BA08 CA24 CA26 DA05 DA06 DA14 DA15 EA02 EA04 EA05 EA06 GA01

Claims (3)

[Claims] 1. A closed container formed on a substrate, wherein a space defining member having an upper surface portion and a side surface portion and defining a space portion of the closed container is formed on the substrate, A closed container including a structure in which the part defining member has a structure in which silicon films formed by a thin film forming technique are stacked. 2. The wiring film according to claim 1, wherein a wiring film is disposed in the space, the wiring film is exposed to the outside from the side surface portion, and the wiring film is supported by an insulating film outside, or A closed container in a floating state. 3. A method for manufacturing a closed container formed on a substrate, comprising: forming a space defining member for defining a space of the closed container by stacking silicon films formed by a thin film forming technique. To manufacture a closed container.