JP2000094317A - Polishing device for wafer - Google Patents

Polishing device for wafer

Info

Publication number
JP2000094317A
JP2000094317A JP27181898A JP27181898A JP2000094317A JP 2000094317 A JP2000094317 A JP 2000094317A JP 27181898 A JP27181898 A JP 27181898A JP 27181898 A JP27181898 A JP 27181898A JP 2000094317 A JP2000094317 A JP 2000094317A
Authority
JP
Japan
Prior art keywords
wafer
polishing
chuck mechanism
cassette
receiving table
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27181898A
Other languages
Japanese (ja)
Other versions
JP4260251B2 (en
Inventor
Kazuo Kobayashi
一雄 小林
Yamato Sako
大和 左光
Satoru Ide
悟 井出
Yoriyuki Mochimaru
順行 持丸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Okamoto Machine Tool Works Ltd
Original Assignee
Okamoto Machine Tool Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Okamoto Machine Tool Works Ltd filed Critical Okamoto Machine Tool Works Ltd
Priority to JP27181898A priority Critical patent/JP4260251B2/en
Publication of JP2000094317A publication Critical patent/JP2000094317A/en
Application granted granted Critical
Publication of JP4260251B2 publication Critical patent/JP4260251B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To integrate a rotary brush with a receiving base to make the device constitution compact, and efficiently perform the polishing process, in a device for polishing semiconductor-wafers. SOLUTION: A rotary brush 13 for cleaning chuck mechanisms is juxtaposed integrally with a receiving base 4, and below an index heat 5, the rotary brush is arranged along a rail 15a arranged on the same circle (C) passing through respective polishing disks 2a to 2c so that it can be advanced and retracted. Then, while a polished wafer W is conveyed to a cassette 7b by a conveying robot 8b, the sucking surface of the chuck mechanism can be cleaned by the rotary brush 13.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、ベアウエハ、デバ
イスウエハ、SOIウエハ、磁気ヘッドウエハ、磁気デ
ィスクウエハなどの半導体ウエハの表面を研磨する装置
に関する。
The present invention relates to an apparatus for polishing a surface of a semiconductor wafer such as a bare wafer, a device wafer, an SOI wafer, a magnetic head wafer, and a magnetic disk wafer.

【0002】[0002]

【従来の技術】この種の研磨装置として、研磨盤を有す
る基台の上方に、チャック機構を回動自在に支持するイ
ンデックスヘッドを配し、ウエハをチャック機構により
保持すると共に、保持されたウエハを研磨盤に押圧し、
研磨盤とチャック機構とを相互に回転させてウエハの研
磨を行うように構成されたものが知られている。
2. Description of the Related Art As a polishing apparatus of this kind, an index head for rotatably supporting a chuck mechanism is arranged above a base having a polishing disk, and a wafer is held by the chuck mechanism and the held wafer is held. To the polishing machine,
2. Description of the Related Art There has been known an apparatus configured to rotate a polishing machine and a chuck mechanism mutually to perform wafer polishing.

【0003】より詳しくは、図7は我々が特願平10−
234870号、同10−208540号の明細書で示
す装置の一例を示し、この研磨装置は、基台100上に
3基の研磨盤(以下、ポリッシャーという)110と、
1基のウエハWの受け台120とを任意の点Oの廻りに
当該点に対して互いに90°の角度をなすように同一円
周上に配置し、上記点Oを回転軸芯とした回転軸180
を基台100に突設し、この回転軸180で4基のチャ
ック機構130を同じく回転軸180の廻りに互いに9
0°の角度をなすように配置し、且つこれらを回動自在
に支持してなるインデックスヘッド(図中、破線で示
す)140を回動自在に支持してなり、搬送ロボット1
50により受け台120に載せられた5枚のウエハWを
各チャック機構で一括して保持し、これをインデックス
ヘッド140を90°づつ回動させて各ポリッシャーに
導き、各ポリッシャーにおいてウエハWを押圧し、上記
チャック機構及び研磨盤を回転させてウエハWの表面を
研磨するように構成されていた。なお、図中、符号16
0a,160bは研磨前後のウエハWが装填されるカセ
ット、170は各ポリッシャー付設されたパッドコンデ
ィショナーである。
[0003] More specifically, FIG.
No. 234870 and No. 10-208540 show examples of the apparatus shown in this specification. This polishing apparatus comprises three polishing disks (hereinafter referred to as polishers) 110 on a base 100,
A cradle 120 for one wafer W is arranged around an arbitrary point O on the same circumference so as to form an angle of 90 ° with respect to the point O, and the point O is used as a rotation axis. Axis 180
Are protruded from the base 100, and four chuck mechanisms 130 are also rotated by the rotation shaft 180 so that
An index head (indicated by a broken line in the drawing) 140, which is arranged at an angle of 0 ° and rotatably supports them, is rotatably supported.
The five wafers W placed on the receiving table 120 by 50 are collectively held by each chuck mechanism, and the index head 140 is rotated by 90 ° to be guided to each polisher, and the wafer W is pressed by each polisher. Then, the chuck mechanism and the polishing plate are rotated to polish the surface of the wafer W. In the figure, reference numeral 16 is used.
Reference numerals 0a and 160b denote cassettes in which wafers W before and after polishing are loaded, and 170 denotes a pad conditioner provided with each polisher.

【0004】そして、全てのポリッシャー110を経て
表面が研磨されたウエハWは、再び受け台120に載せ
られてから搬送ロボット150によりカセット160b
に移送されていた。ウエハWの保持を解除したチャック
機構130は、その保持面に図示されていない回転ブラ
シを導き、これを回転させて当該面を掃除し、研磨工程
で付着した塵や汚れが拭き取られるようになっていた。
Then, the wafer W, the surface of which has been polished through all the polishers 110, is again placed on the receiving table 120 and then transferred to the cassette 160b by the transfer robot 150.
Had been transferred to The chuck mechanism 130 that has released the holding of the wafer W guides a rotating brush (not shown) to the holding surface, rotates the brush to clean the surface, and wipes off dust and dirt attached in the polishing process. Had become.

【0005】[0005]

【発明が解決しようとする課題】上記チャック機構13
0の保持面の回転ブラシによる掃除は、新たなウエハW
を確実に保持し、研磨されたウエハWの平坦性を確保す
る上で必要不可欠であるが、回転ブラシをカセット側と
平行に位置した場所から進退自在に設けたのでは装置構
造が複雑となり、研磨装置全体をコンパクトにできない
という問題があった。
SUMMARY OF THE INVENTION The chuck mechanism 13 described above.
The cleaning of the holding surface with a rotating brush by a new brush W
Although it is indispensable to securely hold the flatness of the polished wafer W, if the rotating brush is provided so as to be able to advance and retreat from a position parallel to the cassette side, the device structure becomes complicated, There is a problem that the entire polishing apparatus cannot be made compact.

【0006】本発明は従来技術の有するこのような問題
点に鑑み、半導体ウエハを研磨する装置において、回転
ブラシを受け台に一体化させて装置構成のコンパクト化
を図り、且つ効率的な研磨加工処理を行えるようにする
ことを課題とする。
The present invention has been made in view of the above-mentioned problems in the prior art, and in a polishing apparatus for polishing a semiconductor wafer, a rotary brush is integrated with a receiving table to reduce the size of the apparatus and to efficiently perform polishing. An object is to enable processing.

【0007】[0007]

【発明が解決しようとする課題】上記課題を解決するた
めの本発明のウエハの研磨装置は、複数(n基;但し、
nは2〜4の整数)の研磨盤を同一の円周上に配してな
る基台と、この基台の上方で複数(n+1基)のチャッ
ク機構を回動自在に支持してなるインデックスヘッド
と、カセットから移送される研磨前のウエハ及びチャッ
ク機構により移送される研磨後のウエハが載置されるウ
エハ受け台とを備え、ウエハを裏面からチャック機構で
保持し、その表面を研磨盤に押し付けてウエハ表面の研
磨を行うように構成されており、上記受け台にチャック
機構掃除用の回転ブラシを並設し、且つインデックスヘ
ッドの下方でこれらが一体に、上記円周上に交差する点
を通過する直線上に進退し得るように設けたことを特徴
とするものである。
SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, a plurality of (n-unit;
(n is an integer of 2 to 4) a polishing base arranged on the same circumference, and an index formed by rotatably supporting a plurality of (n + 1) chuck mechanisms above the base. A head, a wafer receiving table on which a wafer before polishing transferred from the cassette and a wafer after polishing transferred by the chuck mechanism are mounted, the wafer is held by the chuck mechanism from the back surface, and the surface is , And a rotary brush for cleaning the chuck mechanism is arranged in parallel with the receiving table, and they intersect on the circumference integrally below the index head. It is characterized by being provided so as to be able to advance and retreat on a straight line passing through a point.

【0008】上記構成において、適宜長さのレールを基
台に配し、このレールに沿って往復移動自在に設けたフ
レームに、ウエハが載せられる受け板と回転ブラシとを
当該移動方向に直列に並べて受け台を形成する。
In the above construction, a rail having an appropriate length is arranged on a base, and a receiving plate on which a wafer is mounted and a rotary brush are serially arranged in the moving direction on a frame provided reciprocally along the rail. Side by side to form a cradle.

【0009】また、上記構成において、上記円周と受け
台とが交差する位置において受け台に載せられたウエハ
をチャック機構に保持させ、当該交差部を挟んだレール
の一側において研磨前のウエハをカセットから受け台に
移送し、他側において研磨後のウエハを受け台からカセ
ットに移送するように構成する。
In the above structure, the wafer mounted on the pedestal is held by the chuck mechanism at a position where the circumference intersects with the pedestal, and the wafer before polishing is held on one side of the rail sandwiching the intersection. Is transferred from the cassette to the receiving table, and the wafer after polishing is transferred from the receiving table to the cassette on the other side.

【0010】[0010]

【発明の実施の形態】以下、図示した実施形態に基づき
本発明を詳述する。図1は本発明の研磨装置の一実施形
態の構成を示しており、図中、符号1は基台、2a,2
b,2cはポリッシャー、3,3,3は各ポリッシャー
に付設されたパッドコンディショナー、4はウエハを受
ける受け台、5はインデックスヘッド、6a,6b,6
c,6dはチャック機構、7a,7bはウエハWが装填
されるカセット、8a,8bは搬送ロボット、9はウエ
ハ洗浄機構、Wはウエハである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on illustrated embodiments. FIG. 1 shows a configuration of an embodiment of a polishing apparatus according to the present invention. In the figure, reference numeral 1 denotes a base, 2a, 2
b and 2c are polishers; 3, 3 and 3 are pad conditioners attached to each polisher; 4 is a pedestal for receiving a wafer; 5 is an index head; 6a, 6b and 6;
c and 6d are chuck mechanisms, 7a and 7b are cassettes in which wafers W are loaded, 8a and 8b are transfer robots, 9 is a wafer cleaning mechanism, and W is a wafer.

【0011】基台1は、その上面に3基のポリッシャー
2a〜2cとパッドコンディショナー3とが設置されて
いる。各ポリッシャーは、基台1の上面の任意の点Oを
中心とする円Cの円周上に配され、ポリッシャー2aと
ポリッシャー2cは点Oを挟んだ対向位置に、ポリッシ
ャー2bは上記両ポリッシャーから等間隔離れた位置、
すなわち点Oに対して互いに90°の角度なす位置に配
置してある。なお、後述の受け台4が円Cの円周上に位
置したときに、ポリッシャー2bと受け台4とは点Oを
挟んで180°の角度をなす対向位置となる。
The base 1 is provided with three polishers 2a to 2c and a pad conditioner 3 on its upper surface. Each polisher is arranged on the circumference of a circle C centered on an arbitrary point O on the upper surface of the base 1. The polishers 2a and 2c are located at opposing positions with the point O interposed therebetween. Equidistantly spaced,
That is, they are arranged at a 90 ° angle with respect to the point O. It should be noted that when a cradle 4 to be described later is positioned on the circumference of the circle C, the polisher 2b and the cradle 4 are opposed to each other at an angle of 180 ° with respect to the point O.

【0012】各ポリッシャーは、それぞれポリッシャー
2aが粗研磨、ポリッシャー2bは中仕上研磨、ポリッ
シャー2cが仕上研磨を行うものであり、図2に示され
ているように、その下部が回転軸10により支持されて
回転自在に設けられ、その表面には研磨布11が貼付し
てある。各ポリッシャーには、研磨布11の上面に直線
上に進退し、回転して研磨布11を修復するパッドコン
ディショナー3が付設してある。
In each polisher, the polisher 2a performs rough polishing, the polisher 2b performs medium finish polishing, and the polisher 2c performs finish polishing. The lower portion of the polisher is supported by the rotating shaft 10, as shown in FIG. It is provided rotatably, and a polishing cloth 11 is attached to the surface thereof. Each polisher is provided with a pad conditioner 3 which advances and retreats linearly on the upper surface of the polishing cloth 11 and rotates to repair the polishing cloth 11.

【0013】受け台4は、研磨前後のウエハWが載せら
れる2基の受け板12,12とチャック機構の吸着面を
掃除する1基の回転ブラシ13とが一体化されてなり、
且つ上記ポリッシャーの側方で直線的にスライド移動し
得るように設けてある。より詳しくは、図4〜図6に示
されているように、受け台4は、受け板12,12、回
転ブラシ13及びこれらを支持するフレーム14よりな
り、これを、基台1の下部に設置された駆動機構15に
連結板15e介して連結して構成されている。
The receiving table 4 is formed by integrating two receiving plates 12, 12 on which the wafers W before and after polishing are placed, and one rotating brush 13 for cleaning the suction surface of the chuck mechanism.
And it is provided so that it can slide linearly by the side of the polisher. More specifically, as shown in FIGS. 4 to 6, the receiving base 4 includes receiving plates 12, 12, a rotating brush 13, and a frame 14 for supporting the rotating brushes 13, It is configured to be connected to the installed drive mechanism 15 via a connection plate 15e.

【0014】受け板12,12は、周縁に係止部材12
aが突設された円形の板材により、その上面にウエハW
を載置できるように形成してある。回転ブラシ13は、
上方に向けてブラシ13aが突設された略々十字形の円
板13bを、モータ13cの駆動軸と連結した回転軸に
固着して回転自在に設けてある。フレーム14は箱形を
なし、その上面に、受け台4の移動方向に沿って、受け
板12,12と回転ブラシ13とを直列に並べて取り付
け、その内部に回転ブラシ13の駆動モータ13cを固
定してある。
The receiving plates 12 and 12 are provided with locking members 12
a is provided on the upper surface of the wafer W
Is formed so as to be placed. The rotating brush 13
A substantially cross-shaped disc 13b having a brush 13a protruding upward is fixed to a rotary shaft connected to a drive shaft of a motor 13c and is rotatably provided. The frame 14 has a box shape, and on its upper surface, the receiving plates 12, 12 and the rotating brush 13 are attached in series along the moving direction of the receiving table 4, and a drive motor 13c of the rotating brush 13 is fixed inside the frame. I have.

【0015】駆動機構15は、基台1内に適宜長さのレ
ール15aを横設し、このレール上に摺動自在に移動体
15bを取り付け、移動体をサーボモータ15c及びボ
ールネジ棒15dによりレールに沿って往復移動し得る
ように設けてある。レール15aは、上記円Cの円周の
若干外側を横切る位置に設置してある(図4参照)。
The drive mechanism 15 has a rail 15a of an appropriate length arranged horizontally in the base 1, and a movable body 15b is slidably mounted on this rail, and the movable body is rail-mounted by a servomotor 15c and a ball screw rod 15d. It is provided so that it can reciprocate along. The rail 15a is installed at a position crossing slightly outside the circumference of the circle C (see FIG. 4).

【0016】上記フレーム14は、連結板15eを介し
て駆動機構15の移動体15bに一体に連結されてお
り、受け台4は、レール15aの側方で、移動体15b
と共に当該レールに沿って往復移動し、図4に示されて
いるように、受け台4がレール15aの略中央部にある
ときは上記円Cの外周と交差して、受け板12,12が
チャック機構を構成する2基の吸着機構23,23の下
方に位置し、受け台4がレール15aの両端側にあると
きには上記円Cの略外側に位置するようになっている。
また、受け台4が、レール15aのカセット7b側の端
部(図4中の右側端部)まで移動したとき、回転ブラシ
13が一側の吸着機構23の下方に位置するようになっ
ている。
The frame 14 is integrally connected to a moving body 15b of a driving mechanism 15 via a connecting plate 15e.
4, and reciprocates along the rail. As shown in FIG. 4, when the receiving table 4 is located substantially at the center of the rail 15a, the receiving table 12 intersects the outer circumference of the circle C and the receiving plates 12, 12 are moved. It is located below the two suction mechanisms 23, 23 constituting the chuck mechanism, and is located substantially outside the circle C when the receiving table 4 is at both ends of the rail 15a.
Further, when the receiving table 4 moves to the end of the rail 15a on the cassette 7b side (the right end in FIG. 4), the rotating brush 13 is positioned below the suction mechanism 23 on one side. .

【0017】インデッスヘッド5は、上記円Cの中心点
Oを回転軸芯とし、基台1の上方に突設された中空な回
動軸16により回動自在に支持されており(図2参
照)、その下部であって円Cの略円周に沿った位置に、
4組のチャック機構6a〜6dを互いに等間隔離して、
すなわち点Oに対して互いに90°づつ位置をずらして
配置してある。回転軸16の中空部内には、図2に示さ
れているように、真空ポンプ17、コンプレッサー18
及び洗浄液タンク19と、開閉バルブ20の切替えによ
り接続するに8本の剛性の用役管21aが挿通されてお
り、後述の可撓性管22を介して各チャック機構に減圧
空気、加圧空気、洗浄液などの必要な用役を供給できる
ようになっている。
The index head 5 is rotatably supported by a hollow rotary shaft 16 projecting above the base 1 with the center point O of the circle C as a rotation axis (FIG. 2). ), At a position below and substantially along the circumference of the circle C,
The four sets of chuck mechanisms 6a to 6d are equally spaced from each other,
That is, the positions are shifted from each other by 90 ° with respect to the point O. As shown in FIG. 2, a vacuum pump 17 and a compressor 18 are provided in the hollow portion of the rotating shaft 16.
Eight rigid utility pipes 21a are inserted to connect the cleaning liquid tank 19 to the cleaning liquid tank 19 by switching the open / close valve 20, and decompressed air and pressurized air are supplied to each chuck mechanism via a flexible pipe 22 described later. In addition, necessary utilities such as cleaning liquid can be supplied.

【0018】各チャック機構は、2基の吸着機構23を
一組として一体に作動するように構成されている。各々
の吸着機構23は、インデックスヘッド5の縁部付近に
下向きに取り付けられ、図3に示されるように、内部に
剛性の用役管21bが挿通された中空の回転軸24の先
端に円形枠材よりなるヘッド25が取り付けられ、この
ヘッド25の枠内に多数の小孔26aが穿設された吸着
板26が装着され、インデックスヘッド5の上部に配置
されたモータ27により垂直軸廻りの回転運動が、同じ
くエアシリンダー28により垂直軸方向の進退運動が与
えられ、上記用役管23が可撓性管22を介してインデ
ックスヘッド5の用役管21に接続されてヘッド内に必
要な用役を供給できるように形成されており、用役管2
1a,21b及び可撓性管22を通じて真空ポンプ17
と接続し、真空ポンプによりヘッド内部を減圧してウエ
ハWを吸着板26に吸着し、これを保持し得るように設
けてある。また、開閉バルブ20の切替えにより上記コ
ンプレッサー18及び洗浄液タンク19とも接続してい
る。洗浄液は吸着板26の小孔26aを洗浄し、加圧気
体はウエハWの吸着板26からの剥離を容易とする。
Each of the chuck mechanisms is configured to operate integrally with the two suction mechanisms 23 as a set. Each suction mechanism 23 is attached downward near the edge of the index head 5, and as shown in FIG. 3, a circular frame is attached to the tip of a hollow rotary shaft 24 into which a rigid utility pipe 21b is inserted. A head 25 made of a material is attached, and a suction plate 26 having a large number of small holes 26a is mounted in the frame of the head 25, and rotated about a vertical axis by a motor 27 disposed above the index head 5. The movement is also given a vertical axial movement by the air cylinder 28, and the utility pipe 23 is connected to the utility pipe 21 of the index head 5 via the flexible pipe 22, and the necessary utility is provided in the head. The service pipe 2 is formed so as to supply a role.
Vacuum pump 17 through 1a, 21b and flexible tube 22
, And the pressure inside the head is reduced by a vacuum pump so that the wafer W is sucked to the suction plate 26 and held there. In addition, the compressor 18 and the washing liquid tank 19 are connected by switching the open / close valve 20. The cleaning liquid cleans the small holes 26a of the suction plate 26, and the pressurized gas facilitates the separation of the wafer W from the suction plate 26.

【0019】カセット7aは研磨前のウエハWが装填さ
れるものであり、受け台4が当該カセット側に位置して
いるときに、カセット内のウエハWが搬送ロボット8a
により順次受け台4に移送されようになっている。ま
た、カセット7bは、研磨後のウエハWが装填されるも
のであり、受け台4が当該カセット側に位置していると
きに、研磨工程を経たウエハWが、搬送ロボット8bに
より受け台4から移送されるようになっている。
The cassette 7a is loaded with unpolished wafers W. When the receiving table 4 is positioned on the cassette side, the wafers W in the cassette are transferred to the transfer robot 8a.
Are sequentially transferred to the receiving table 4. The cassette 7b is loaded with the polished wafers W. When the receiving table 4 is located on the cassette side, the wafer W that has undergone the polishing process is transferred from the receiving table 4 by the transfer robot 8b. It is to be transported.

【0020】ウエハ洗浄機構9は、ウエハWに洗浄液を
噴出して、研磨されたウエハWの洗浄を行うものであ
る。
The wafer cleaning mechanism 9 cleans the polished wafer W by jetting a cleaning liquid onto the wafer W.

【0021】次に、このように構成された本形態の研磨
装置によるウエハWの研磨工程を説明する。
Next, a description will be given of a polishing process of the wafer W by the polishing apparatus of the present embodiment configured as described above.

【0022】(1)先ず、搬送ロボット8aを作動さ
せ、カセット7aから研磨前のウエハWを受け台4に移
送する。受け台4をレール15aのカセット7a側の端
部、すなわち図1中で受け台4を実線で示す位置に置
き、搬送ロボット8aでカセット7aから受け台4の右
側の受け板12にウエハWを移送し、載せる。続けて、
受け台4をウエハ1枚分だけ右側に移動させ、カセット
7aから左側の受け板12にウエハWを移送する。次
に、受け台4をインデックスヘッド5の正面までレール
15aに沿って移動させ、当該位置でチャック機構6a
を下降し、受け台4に載せられた2枚のウエハWを吸着
し保持させた後、当該チャック機構を上昇させる。チャ
ック機構6aではウエハWを裏面から保持する。
(1) First, the transfer robot 8a is operated to transfer the wafer W before polishing from the cassette 7a to the receiving table 4. The cradle 4 is placed at the end of the rail 15a on the cassette 7a side, that is, at a position indicated by a solid line in FIG. 1, and the transfer robot 8a transfers the wafer W from the cassette 7a to the receiving plate 12 on the right side of the cradle 4. Transfer and place. continue,
The receiving table 4 is moved to the right by one wafer, and the wafer W is transferred from the cassette 7a to the receiving plate 12 on the left. Next, the cradle 4 is moved along the rail 15a to the front of the index head 5, and the chuck mechanism 6a is moved at that position.
Is lowered, and the two wafers W placed on the receiving table 4 are sucked and held, and then the chuck mechanism is raised. The chuck mechanism 6a holds the wafer W from the back.

【0023】(2)インデックスヘッド5を図1におい
て時計回りに90°回動させてチャック機構6aに保持
されたウエハWを第1のポリッシャー2a上に導くと共
に、チャック機構6aを下降させてウエハWをポリッシ
ャー2aに押圧し、回転軸10,24を回転させてウエ
ハWの表面を粗研磨する。研磨終了後、チャック機構6
aを上昇させ当該ポリッシャー上に移動しておく。この
間、受け台4をカセット7a側の端部位置まで戻し、上
記と同様に受け台4の右側の受け板12と左側の受け板
12とに順次、カセット7aからウエハWを載せ、さら
に受け台4をインデックスヘッド5の中央までレール1
5aに沿って移動させ、チャック機構6bで2枚のウエ
ハWを吸着し保持させた後、当該チャック機構を受け台
4の上方に上昇させておく。
(2) The index head 5 is rotated 90 ° clockwise in FIG. 1 to guide the wafer W held by the chuck mechanism 6a onto the first polisher 2a, and the chuck mechanism 6a is lowered to move the wafer W W is pressed against the polisher 2a, and the rotating shafts 10, 24 are rotated to roughly polish the surface of the wafer W. After the polishing, the chuck mechanism 6
a is raised and moved on the polisher. In the meantime, the receiving table 4 is returned to the end position on the cassette 7a side, and the wafers W are sequentially placed from the cassette 7a on the right receiving plate 12 and the left receiving plate 12 of the receiving table 4 in the same manner as described above. 4 is the rail 1 to the center of the index head 5
After the wafer W is moved along 5a and the two wafers W are sucked and held by the chuck mechanism 6b, the chuck mechanism is raised above the receiving table 4.

【0024】(3)インデックスヘッド5を上記と同方
向に90°回動させてチャック機構6aに保持されたウ
エハWを第2のポリッシャー2b上に、チャック機構6
bに保持されたウエハWを第1のポリッシャー2a上に
それぞれ導き、両チャック機構6a,6bを下降させ、
それぞれポリッシャー2bでウエハWの中仕上研磨を行
い、ポリッシャー2aでウエハWの粗仕上研磨を行う。
それぞれ研磨が終了したならば、各チャック機構を上昇
させ当該ポリッシャー上に移動しておく。この間、受け
台4をカセット7a側の端部位置まで戻し、上記と同様
にカセット7aから新たなウエハWを受け台4に順次載
せ、さらに受け台4をインデックスヘッド5の中央まで
移動させ、チャック機構6cで2枚のウエハWを吸着し
保持させた後、当該チャック機構を受け台4の上方に上
昇させておく。
(3) The index head 5 is rotated 90 ° in the same direction as described above, and the wafer W held by the chuck mechanism 6a is placed on the second polisher 2b.
b is guided on the first polisher 2a, and both chuck mechanisms 6a and 6b are lowered.
Each of the polishers 2b performs medium finish polishing of the wafer W, and the polisher 2a performs rough finish polishing of the wafer W.
When the polishing is completed, each chuck mechanism is raised and moved on the polisher. During this time, the receiving table 4 is returned to the end position on the cassette 7a side, new wafers W are sequentially placed on the receiving table 4 from the cassette 7a in the same manner as described above, and the receiving table 4 is further moved to the center of the index head 5, and After the two wafers W are sucked and held by the mechanism 6c, the chuck mechanism is raised above the receiving table 4.

【0025】(4)インデックスヘッド5を上記と同様
にさらに90°回動させてチャック機構6aに保持され
たウエハWを第3のポリッシャー2c上に、チャック機
構6bに保持されたウエハWを第2のポリッシャー2b
上に、チャック機構6cに保持されたウエハWを第1の
ポリッシャー2a上にそれぞれ導き、各チャック機構6
a,6b,6cを下降させ、それぞれポリッシャー2c
でウエハWの仕上研磨を行い、ポリッシャー2bでウエ
ハWの中仕上研磨を行い、ポリッシャー2aでウエハW
の粗仕上研磨を行う。各ポリッシャーで研磨が終了した
ならば、各チャック機構を上昇させ当該ポリッシャー上
に各々移動しておく。この間、受け台4をカセット7a
側の端部位置まで戻し、上記と同様にカセット7aから
新たなウエハWを受け台4に順次載せ、さらに受け台4
をインデックスヘッド5の中央まで移動させ、チャック
機構6dで2枚のウエハWを吸着し保持させた後、当該
チャック機構を受け台4の上方に上昇させておく。ウエ
ハWをチャック機構6dに吸着させた後、受け台4はイ
ンデックスヘッド5の中央部に固定しておく。
(4) The index head 5 is further rotated by 90 ° in the same manner as described above, and the wafer W held by the chuck mechanism 6a is placed on the third polisher 2c, and the wafer W held by the chuck mechanism 6b is placed on the third polisher 2c. 2 polishers 2b
The wafers W held by the chuck mechanisms 6c are respectively guided onto the first polisher 2a, and each chuck mechanism 6c
a, 6b and 6c are lowered, and the polisher 2c
And finish polishing of the wafer W by the polisher 2b, and finish polishing of the wafer W by the polisher 2a.
Rough finish polishing. When the polishing is completed in each polisher, each chuck mechanism is raised and moved on the corresponding polisher. During this time, the receiving table 4 is moved to the cassette 7a.
And the new wafers W are sequentially placed on the receiving table 4 from the cassette 7a in the same manner as described above.
Is moved to the center of the index head 5, and two wafers W are sucked and held by the chuck mechanism 6d, and then the chuck mechanism is raised above the receiving table 4. After the wafer W is attracted to the chuck mechanism 6d, the receiving table 4 is fixed to the center of the index head 5.

【0026】(5)さらにインデックスヘッド5を上記
と同様に90°回動させ、第3のポリッシャー2cで研
磨したウエハWを上記受け台4上に導き、チャック機構
6aを下降させ、バキューム吸引を止めると共に回転軸
24内に加圧空気を送って両ウエハWを受け台4の受け
板12,12の載せ、ウエハ洗浄機構9から洗浄液を噴
出してウエハWの吸着面(裏面)を洗浄する。
(5) Further, the index head 5 is rotated by 90 ° in the same manner as described above, the wafer W polished by the third polisher 2c is guided onto the receiving table 4, the chuck mechanism 6a is lowered, and vacuum suction is performed. The wafer W is stopped and the pressurized air is sent into the rotary shaft 24 to place the wafers W on the receiving plates 12 and 12 of the receiving table 4 and the cleaning liquid is ejected from the wafer cleaning mechanism 9 to clean the suction surface (back surface) of the wafer W. .

【0027】研磨されたウエハWが受け台4に載せられ
たならば、受け台4を、図1及び図4において、インデ
ックスヘッド5の中央からウエハ1枚分右側に移動さ
せ、搬送ロボット8bで受け台4の右側の受け板12に
載せられたウエハWをカセット7bに移送し、この間、
チャック機構6aの一側(左側)の吸着機構23の吸着
面に回転ブラシ13を当接させ、ブラシを回転し摺擦さ
せて汚れを拭き取り、その後、さらに受け台4をウエハ
1枚分右側にさらに移動させ、搬送ロボット8bで受け
台4の左側の受け板12に載せられたウエハWをカセッ
ト7bに移送し、この間、チャック機構6aの他側(右
側)の吸着機構23の吸着面に回転ブラシ13を当接さ
せ、ブラシを回転し摺擦させて汚れを拭き取る。このよ
うに、研磨されたウエハWをカセット7bに移送してい
る間に、回転ブラシ13によってチャック機構6aの吸
着面のクリーニングが行われる。
When the polished wafer W is placed on the receiving table 4, the receiving table 4 is moved to the right by one wafer from the center of the index head 5 in FIGS. The wafer W placed on the receiving plate 12 on the right side of the receiving table 4 is transferred to the cassette 7b.
The rotating brush 13 is brought into contact with the suction surface of the suction mechanism 23 on one side (left side) of the chuck mechanism 6a, and the brush is rotated and rubbed to wipe off dirt. Then, the receiving table 4 is further moved rightward by one wafer. Further, the wafer W placed on the receiving plate 12 on the left side of the receiving table 4 is transferred to the cassette 7b by the transfer robot 8b, during which the suction surface of the suction mechanism 23 on the other side (right side) of the chuck mechanism 6a rotates. The brush 13 is brought into contact, and the brush is rotated and rubbed to remove dirt. As described above, while the polished wafer W is being transferred to the cassette 7b, the rotary brush 13 cleans the suction surface of the chuck mechanism 6a.

【0028】そして、回転ブラシ13によるチャック機
構6aの掃除完了後、受け台4をカセット7a側の端部
まで移動させて新たなウエハWを載せ、再びインデック
スヘッド5の中央まで移動させ、新たなウエハWをチャ
ック機構6aに吸着させておく。ウエハWをチャック機
構6aに吸着させた後、受け台4はレール15aの中央
部に固定しておく。
After the cleaning of the chuck mechanism 6a by the rotating brush 13 is completed, the receiving table 4 is moved to the end on the cassette 7a side to place a new wafer W thereon, and is again moved to the center of the index head 5, and a new one is moved. The wafer W is held by the chuck mechanism 6a. After the wafer W is attracted to the chuck mechanism 6a, the receiving table 4 is fixed to the center of the rail 15a.

【0029】これらの間、第2のポリッシャー2bで研
磨されたウエハWを第3のポリッシャー2cに、第1の
ポリッシャー2aで研磨されたウエハWを第2のポリッ
シャー2bに、また、チャック機構6dに吸着されたウ
エハWを第1のポリッシャー2aにそれぞれ導き、各々
チャック機構を下降させ、各ポリッシャーで上記と同様
にウエハWの研磨を行う。
In the meantime, the wafer W polished by the second polisher 2b is used for the third polisher 2c, the wafer W polished by the first polisher 2a is used for the second polisher 2b, and the chuck mechanism 6d is used. The wafers W attracted to the wafer W are respectively guided to the first polishers 2a, the chuck mechanisms are lowered, and the wafers W are polished by the respective polishers in the same manner as described above.

【0030】(6)以降、同様にしてインデックスヘッ
ド5の90°毎の回動と受け台4の移動に伴うウエハW
のカセット7aからの移送、カセット7bへの移送及び
チャック機構の吸着面の回転ブラシ13による清掃、各
ポリッシャーにおける研磨を行いながら、ウエハWを連
続的に研磨処理するように動作する。
(6) Thereafter, in the same manner, the wafer W associated with the rotation of the index head 5 every 90 ° and the movement of the receiving table 4
The wafer W is continuously polished while being transferred from the cassette 7a, transferred to the cassette 7b, the suction surface of the chuck mechanism is cleaned by the rotating brush 13, and the polisher is polished.

【0031】なお、上記形態は一例に過ぎず、ポリッシ
ャーやチャック機構の配置及びその数は適宜な構成とす
ることができる。例えば、上記(6)の工程のインデッ
クスヘッド5の回動を逆方向(反時計方向)に270°
回動させて行ってもよい。回転ブラシ13によるチャッ
ク機構のクリーニングは上記とは異なる順序で行っても
よく、ウエハWの移送とは無関係に受け台4を移動さ
せ、回転ブラシ13でチャック機構をクリーニングして
もよい。
The above-described embodiment is merely an example, and the arrangement and number of the polishers and chuck mechanisms can be appropriately determined. For example, the rotation of the index head 5 in the step (6) is performed by 270 ° in the reverse direction (counterclockwise).
The rotation may be performed. The cleaning of the chuck mechanism by the rotating brush 13 may be performed in a different order from the above, and the cradle 4 may be moved independently of the transfer of the wafer W to clean the chuck mechanism by the rotating brush 13.

【0032】新たなウエハWの移送において、受け台4
のウエハ1枚分の右側への移動を行わず、搬送ロボット
8aの軸心中心での回動により、左右一対のカセット7
a,7aの内、左側のカセット7aから移送されるウエ
ハWは受け台4上の右側の受け板12に、右側のカセッ
ト7aから移送されるウエハWは受け台4上の左側の受
け板12に載せられるようにしてもよい。搬送ロボット
8aの軸心中心での回動の幅を広げ、先に左側のカセッ
ト7aより左右の受け板12にウエハWを載せ、当該カ
セットが空になったならば、右側のカセット7aからウ
エハWを受け台4に載せるようにしてもよい。
In transfer of a new wafer W, the pedestal 4
Is not moved to the right by one wafer, and the pair of right and left cassettes 7 is rotated by the rotation of the transfer robot 8a about the axis.
a, 7a, the wafer W transferred from the left cassette 7a is placed on the right receiving plate 12 on the receiving table 4, and the wafer W transferred from the right cassette 7a is placed on the left receiving plate 12 on the receiving table 4. May be placed on the server. The width of rotation of the transfer robot 8a about the axis is increased, and the wafer W is placed on the left and right receiving plates 12 from the left cassette 7a. When the cassette is empty, the wafer is moved from the right cassette 7a. W may be placed on the receiving table 4.

【0033】さらに、上記各ポリッシャーにおける研磨
は、同時に終了するのが望ましい。従って、比較的研磨
時間が短くて済む、第3のポリッシャー2cにおける仕
上研磨の開始時期を、第1のポリッシャー2aにおける
粗研磨、第2のポリッシャー2bにおける中仕上研磨の
開始時期よりも遅らせ、全ポリッシャーで同時に研磨が
終了するように調節してもよい。
Further, it is desirable that the polishing in each of the polishers be completed simultaneously. Accordingly, the start time of the finish polishing in the third polisher 2c, which requires a relatively short polishing time, is delayed from the start time of the rough polishing in the first polisher 2a and the start time of the medium finish polishing in the second polisher 2b. The polishing may be adjusted simultaneously with a polisher.

【0034】異なる種類のウエハWをそれぞれのカセッ
ト7a,7aに収納し、それぞれ研磨させることもでき
る。さらにウエハWの需要が少ないときは、チャック機
構を構成する一対の吸着機構の一方のみを作動させ、他
方は作動させないようにしてもよい。
Different types of wafers W can be stored in the respective cassettes 7a, 7a and polished. Further, when the demand for the wafer W is small, only one of the pair of suction mechanisms constituting the chuck mechanism may be operated, and the other may not be operated.

【0035】本発明の装置の態様として、研磨ステージ
(ポリッシャー)がn(nは2〜5の整数)、ローディ
ング(カセットからの研磨前のウエハの移送)・アンロ
ーディング(カセットへの研磨後のウエハの移送)が1
ステージで全体が(n+1)ステージのときはインデッ
スヘッドの回動は360/(n+1)度、チャック機構
は(n+1)基となる。すなわち、研磨ステージが粗研
磨と仕上研磨の2ステージのときはチャック機構は3
基、インデックスヘッドの回動は120度である。
As an embodiment of the apparatus of the present invention, the polishing stage (polisher) has n (n is an integer of 2 to 5), loading (transfer of the wafer before polishing from the cassette), and unloading (after polishing to the cassette). Wafer transfer) is 1
When the entire stage is the (n + 1) stage, the rotation of the index head is 360 / (n + 1) degrees, and the number of chuck mechanisms is (n + 1). That is, when the polishing stage is a two-stage of rough polishing and finish polishing, the chuck mechanism is three.
Basically, the rotation of the index head is 120 degrees.

【0036】[0036]

【発明の効果】このように、本発明のウエハの研磨装置
は、2基の受け板と1基の回転ブラシを受け台に一体に
並設し、これらを直線的に往復移動し得るように基台に
設けてあるので、回転ブラシを別体としてこれを駆動さ
せる場合と比べて、装置をコンパクトに構成して、ウエ
ハの移送とチャック機構の掃除とを行うことができる。
As described above, the wafer polishing apparatus of the present invention has two receiving plates and one rotating brush which are integrally arranged side by side on a receiving table so that they can be reciprocated linearly. Since the rotary brush is provided on the base, the apparatus can be made more compact and the transfer of the wafer and the cleaning of the chuck mechanism can be performed as compared with the case where the rotary brush is driven separately.

【0037】また、受け台は、ウエハが載せられる受け
板と回転ブラシとを、移動方向に沿って直列に並べて形
成してあるので、ウエハのカセットへの移送と同時に回
転ブラシによるチャック機構の吸着面の掃除を行うこと
ができ、研磨処理が効率化し、全体の処理時間も短縮す
ることができる。
Further, since the receiving table is formed by arranging the receiving plate on which the wafer is mounted and the rotating brush in series along the moving direction, the wafer is transferred to the cassette and the chuck mechanism is attracted to the chuck mechanism by the rotating brush. The surface can be cleaned, the polishing process can be made more efficient, and the overall processing time can be reduced.

【0038】また、受け台は基台に設けたレールに沿っ
てスライド自在に設け、レールの中央部でチャック機構
へのウエハの吸着が行えるようにし、その両側でカセッ
トとのウエハの移送を行うように構成することにより、
レールの両側に、研磨前後のウエハを収納するカセット
とこれを移送する搬送ロボットを配置して、受け台とカ
セットとの間のウエハの移送を効率的に行うことができ
る。
Further, the receiving table is slidably provided along a rail provided on the base so that the wafer can be attracted to the chuck mechanism at the center of the rail, and the wafer is transferred to and from the cassette on both sides thereof. By configuring
A cassette for storing wafers before and after polishing and a transfer robot for transferring the cassette are arranged on both sides of the rail, so that the wafer can be efficiently transferred between the receiving table and the cassette.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の研磨装置の一実施形態の構成を示す平
面図である。
FIG. 1 is a plan view showing a configuration of an embodiment of a polishing apparatus of the present invention.

【図2】図1の研磨装置の略断面図である。FIG. 2 is a schematic sectional view of the polishing apparatus of FIG.

【図3】チャック機構の構成を示す図である。FIG. 3 is a diagram illustrating a configuration of a chuck mechanism.

【図4】受け台の構成を示す図である。FIG. 4 is a diagram showing a configuration of a cradle.

【図5】受け台に取り付けられた回転ブラシを示し、
(A)はその概略平面図、(B)は(A)のV−V線に
沿った断面図である。
FIG. 5 shows a rotating brush attached to a cradle;
(A) is a schematic plan view, and (B) is a cross-sectional view along the line V-V of (A).

【図6】図4のVI−VI線に沿った概略断面図である。FIG. 6 is a schematic sectional view taken along line VI-VI of FIG. 4;

【図7】従来の研磨装置の構成を示す平面図である。FIG. 7 is a plan view showing a configuration of a conventional polishing apparatus.

【符号の説明】[Explanation of symbols]

1 基台 2a〜2c ポリッシャー(研磨盤) 4 受け台 5 インデックスヘッド 6a〜6d チャック機構 7a,7b カセット 8a,8b 搬送ロボット 13 回転ブラシ 15 駆動機構 15a レール O 中心 C 円 W ウエハ 1 base 2a ~ 2c polisher (polishing machine) 4 receiving table 5 index head 6a ~ 6d chuck mechanism 7a, 7b cassette 8a, 8b transfer robot 13 rotating brush 15 drive mechanism 15a rail O center C circle W wafer

フロントページの続き (72)発明者 井出 悟 神奈川県厚木市上依知3009番地 株式会社 岡本工作機械製作所半導体事業部内 (72)発明者 持丸 順行 神奈川県厚木市上依知3009番地 株式会社 岡本工作機械製作所半導体事業部内 Fターム(参考) 3C058 AA07 AA11 AA16 AA18 AB06 AB08 BC01 BC02 CB03 DA17Continued on the front page (72) Inventor Satoru Ide 3009 Uechi, Atsugi-city, Kanagawa Prefecture Inside the Semiconductor Division of Okamoto Machine Tool Works, Ltd. (72) Inventor Junyuki Mochimaru 3009, Kamiyori, Atsugi-shi, Kanagawa Prefecture Semiconductor Business of Okamoto Machine Tool Works, Ltd. Department F-term (reference) 3C058 AA07 AA11 AA16 AA18 AB06 AB08 BC01 BC02 CB03 DA17

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 複数の研磨盤を同一の円周上に配してな
る基台と、この基台の上方で複数のチャック機構を回動
自在に支持してなるインデックスヘッドと、カセットか
ら移送される研磨前のウエハ及びチャック機構により移
送される研磨後のウエハが載置されるウエハ受け台とを
備え、ウエハを裏面からチャック機構で保持し、その表
面を研磨盤に押し付けてウエハ表面の研磨を行うウエハ
の研磨装置において、上記受け台にチャック機構掃除用
の回転ブラシを並設し、且つインデックスヘッドの下方
でこれらが一体に、上記円周上に交差するよう直線方向
に進退自在に設けたことを特徴とするウエハの研磨装
置。
1. A base having a plurality of polishing machines arranged on the same circumference, an index head having a plurality of chuck mechanisms rotatably supported above the base, and a transfer from a cassette. A wafer receiving table on which a wafer before polishing and a wafer after polishing transferred by the chuck mechanism are placed. The wafer is held by the chuck mechanism from the back side, and the surface is pressed against the polishing plate to make the wafer surface In a wafer polishing apparatus for performing polishing, a rotary brush for cleaning a chuck mechanism is arranged side by side on the receiving table, and these are integrally moved below an index head so as to be able to advance and retreat in a linear direction so as to intersect the circumference. An apparatus for polishing a wafer, comprising:
【請求項2】 適宜長さのレールが基台に配され、この
レールに沿って往復移動自在に設けたフレームに、ウエ
ハが載せられる受け板と回転ブラシとを当該移動方向に
直列に並べて受け台を設けてなる請求項1に記載のウエ
ハの研磨装置。
2. A receiving plate on which a wafer is placed and a rotary brush are arranged in series in the moving direction on a frame provided with a rail having an appropriate length on a base and reciprocally movable along the rail. The wafer polishing apparatus according to claim 1, further comprising a table.
【請求項3】 上記円周と受け台とが交差する位置にお
いて受け台に載せられたウエハをチャック機構に保持さ
せ、当該交差部を挟んだレールの一側において研磨前の
ウエハをカセットから受け台に移送し、他側において研
磨後のウエハを受け台からカセットに移送するように構
成された請求項1又は2に記載のウエハの研磨装置。
And a chuck mechanism for holding a wafer placed on the pedestal at a position where the circumference and the pedestal intersect, and receiving a wafer before polishing from a cassette on one side of a rail sandwiching the intersection. 3. The wafer polishing apparatus according to claim 1, wherein the wafer polishing apparatus is configured to transfer the polished wafer from the receiving table to the cassette on the other side.
JP27181898A 1998-09-25 1998-09-25 Wafer polishing equipment Expired - Fee Related JP4260251B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27181898A JP4260251B2 (en) 1998-09-25 1998-09-25 Wafer polishing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27181898A JP4260251B2 (en) 1998-09-25 1998-09-25 Wafer polishing equipment

Publications (2)

Publication Number Publication Date
JP2000094317A true JP2000094317A (en) 2000-04-04
JP4260251B2 JP4260251B2 (en) 2009-04-30

Family

ID=17505284

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27181898A Expired - Fee Related JP4260251B2 (en) 1998-09-25 1998-09-25 Wafer polishing equipment

Country Status (1)

Country Link
JP (1) JP4260251B2 (en)

Cited By (10)

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Publication number Priority date Publication date Assignee Title
JP2002219646A (en) * 2001-01-23 2002-08-06 Okamoto Machine Tool Works Ltd Device for grinding substrate
US6881644B2 (en) 1999-04-21 2005-04-19 Silicon Genesis Corporation Smoothing method for cleaved films made using a release layer
US6969668B1 (en) 1999-04-21 2005-11-29 Silicon Genesis Corporation Treatment method of film quality for the manufacture of substrates
JP2006315160A (en) * 2005-05-16 2006-11-24 Fuji Electric Holdings Co Ltd Finish polishing method for glass substrate of magnetic disk
US7253081B2 (en) 1999-04-21 2007-08-07 Silicon Genesis Corporation Surface finishing of SOI substrates using an EPI process
WO2015015705A1 (en) * 2013-07-29 2015-02-05 信越半導体株式会社 Wafer polishing method and wafer polishing device
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
CN110303419A (en) * 2019-08-05 2019-10-08 西安奕斯伟硅片技术有限公司 A kind of polissoir and method
CN113814854A (en) * 2021-09-28 2021-12-21 浙江芯晖装备技术有限公司 A novel burnishing machine for wafer processing

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6881644B2 (en) 1999-04-21 2005-04-19 Silicon Genesis Corporation Smoothing method for cleaved films made using a release layer
US6969668B1 (en) 1999-04-21 2005-11-29 Silicon Genesis Corporation Treatment method of film quality for the manufacture of substrates
US7253081B2 (en) 1999-04-21 2007-08-07 Silicon Genesis Corporation Surface finishing of SOI substrates using an EPI process
JP2002219646A (en) * 2001-01-23 2002-08-06 Okamoto Machine Tool Works Ltd Device for grinding substrate
JP4732597B2 (en) * 2001-01-23 2011-07-27 株式会社岡本工作機械製作所 Substrate polishing equipment
JP2006315160A (en) * 2005-05-16 2006-11-24 Fuji Electric Holdings Co Ltd Finish polishing method for glass substrate of magnetic disk
US9640711B2 (en) 2006-09-08 2017-05-02 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9356181B2 (en) 2006-09-08 2016-05-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US11444221B2 (en) 2008-05-07 2022-09-13 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
WO2015015705A1 (en) * 2013-07-29 2015-02-05 信越半導体株式会社 Wafer polishing method and wafer polishing device
CN110303419A (en) * 2019-08-05 2019-10-08 西安奕斯伟硅片技术有限公司 A kind of polissoir and method
CN110303419B (en) * 2019-08-05 2021-06-22 西安奕斯伟硅片技术有限公司 Polishing equipment and method
CN113814854A (en) * 2021-09-28 2021-12-21 浙江芯晖装备技术有限公司 A novel burnishing machine for wafer processing

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