JP2000068054A - Manufacture of el element - Google Patents
Manufacture of el elementInfo
- Publication number
- JP2000068054A JP2000068054A JP10240288A JP24028898A JP2000068054A JP 2000068054 A JP2000068054 A JP 2000068054A JP 10240288 A JP10240288 A JP 10240288A JP 24028898 A JP24028898 A JP 24028898A JP 2000068054 A JP2000068054 A JP 2000068054A
- Authority
- JP
- Japan
- Prior art keywords
- frame
- mask
- light emitting
- transparent electrode
- back electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000000463 material Substances 0.000 claims abstract description 123
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 41
- 239000007772 electrode material Substances 0.000 claims abstract description 38
- 229920005989 resin Polymers 0.000 claims abstract description 37
- 239000011347 resin Substances 0.000 claims abstract description 37
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 239000000835 fiber Substances 0.000 claims description 31
- 239000000853 adhesive Substances 0.000 claims description 17
- 230000001070 adhesive effect Effects 0.000 claims description 17
- 150000003949 imides Chemical class 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 4
- 239000002356 single layer Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 9
- 230000002542 deteriorative effect Effects 0.000 abstract description 3
- 238000007738 vacuum evaporation Methods 0.000 abstract description 2
- 239000012780 transparent material Substances 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 description 18
- 238000000151 deposition Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 14
- 239000010408 film Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- -1 aluminum chelate complex Chemical class 0.000 description 4
- 239000010406 cathode material Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000005871 repellent Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 125000006617 triphenylamine group Chemical group 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910018134 Al-Mg Inorganic materials 0.000 description 3
- 229910018467 Al—Mg Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- ZMLPKJYZRQZLDA-UHFFFAOYSA-N 1-(2-phenylethenyl)-4-[4-(2-phenylethenyl)phenyl]benzene Chemical group C=1C=CC=CC=1C=CC(C=C1)=CC=C1C(C=C1)=CC=C1C=CC1=CC=CC=C1 ZMLPKJYZRQZLDA-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920006231 aramid fiber Polymers 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229920006015 heat resistant resin Polymers 0.000 description 2
- 150000007857 hydrazones Chemical class 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000004866 oxadiazoles Chemical class 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 150000002979 perylenes Chemical class 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000002940 repellent Effects 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 150000003557 thiazoles Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、平面光源やディ
スプレイ、その他所定のパターン等の発光表示に用いら
れるチップ状のＥＬ素子の製造方法に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a method of manufacturing a chip-shaped EL element used for light-emitting display such as a flat light source, a display, and other predetermined patterns.
【０００２】[0002]
【従来の技術】従来、有機ＥＬ（エレクトルミネッセン
ス）素子は、図４に示すように、ガラス等からなる透明
な基板１に、透光性のＩＴＯ膜を一面に形成し、所定の
ストライプ状にエッチングして透明電極２を形成してい
た。そして、透明電極２の全面に、図４（ａ）に示すよ
うに、レジスト材料３を塗布し、このレジスト材料３の
表面に透明電極２と略直交するストライプ状のレジスト
用パターンを配置し、露光し現像する。2. Description of the Related Art Conventionally, as shown in FIG. 4, an organic EL (electroluminescence) element is formed by forming a transparent ITO film on a transparent substrate 1 made of glass or the like on one surface and forming a predetermined stripe shape. The transparent electrode 2 was formed by etching. 4A, a resist material 3 is applied on the entire surface of the transparent electrode 2, and a stripe-shaped resist pattern substantially perpendicular to the transparent electrode 2 is disposed on the surface of the resist material 3. Exposure and development.
【０００３】次に不要な部分のレジスト材料３を化学処
理により除去する。このときレジスト材料３の表面付近
は露光により固くなるが、透明電極２付近のレジスト材
料３は柔らかいため溶けやすく、図４（ｂ）に示すよう
に、断面が略逆三角形のレジストパターン４が形成され
る。Next, an unnecessary portion of the resist material 3 is removed by a chemical treatment. At this time, the vicinity of the surface of the resist material 3 is hardened by exposure, but the resist material 3 near the transparent electrode 2 is soft and easily melted, and as shown in FIG. 4B, a resist pattern 4 having a substantially inverted triangular cross section is formed. Is done.
【０００４】次に図４（ｃ）に示すように、透明電極２
及びレジストパターン４の表面に有機ＥＬ材料５を全面
蒸着により薄膜として設け、レジストパターン４間の透
明電極２上に発光層６を形成する。さらに発光層６の表
面及びレジストパターン４上の有機ＥＬ材料５の表面に
蒸着等により背面電極材料７を設け、レジストパターン
４間に背面電極８を形成する。[0004] Next, as shown in FIG.
An organic EL material 5 is provided on the surface of the resist pattern 4 as a thin film by vapor deposition, and a light emitting layer 6 is formed on the transparent electrode 2 between the resist patterns 4. Further, a back electrode material 7 is provided on the surface of the light emitting layer 6 and the surface of the organic EL material 5 on the resist pattern 4 by vapor deposition or the like, and a back electrode 8 is formed between the resist patterns 4.
【０００５】このとき、レジストパターン４の逆三角形
の底面と透明電極２間に設けられた影の部分９には、蒸
着等による有機ＥＬ材料５及び背面電極材料７は付着し
ないことから、レジストパターン４による陰の部分９を
挟んで、隣接する各発光層６と背面電極８は互いに絶縁
される。これにより、背面電極８は、透明電極２と対向
し、略直交するストライプ状に形成される。At this time, since the organic EL material 5 and the back electrode material 7 by vapor deposition or the like do not adhere to the shadow portion 9 provided between the inverted triangular bottom surface of the resist pattern 4 and the transparent electrode 2, the resist pattern Each of the adjacent light emitting layers 6 and the back electrode 8 are insulated from each other with the shaded portion 9 of 4 interposed therebetween. Thus, the back electrode 8 is formed in a stripe shape that faces the transparent electrode 2 and is substantially orthogonal.
【０００６】ここで、有機ＥＬ材料５は、トリフェニル
アミン誘導体（ＴＰＤ）等のホール輸送材料と、発光材
料であるアルミキレート錯体（Ａｌｑ３）等の電子輸送
材料からなる。発光層６は、ホール輸送材料の上に電子
輸送材料を積層したものや、これらの混合層からなる。
また、背面電極材料７は、Ａｌ、Ｌｉ、Ａｇ、Ｍｇ、Ｉ
ｎ等の金属またはこれらの合金からなる。Here, the organic EL material 5 comprises a hole transporting material such as a triphenylamine derivative (TPD) and an electron transporting material such as an aluminum chelate complex (Alq 3 ) which is a light emitting material. The light emitting layer 6 is composed of a layer in which an electron transporting material is laminated on a hole transporting material, or a mixed layer thereof.
The back electrode material 7 is made of Al, Li, Ag, Mg, I
n or a metal thereof.
【０００７】次に、レジストパターン４と、この表面に
積層された有機ＥＬ材料５及び背面電極材料７を除去
し、図４（ｄ）に示すように、基板１上に透明電極２、
発光層６、背面電極８からなる発光部を形成する。Next, the resist pattern 4, the organic EL material 5 and the back electrode material 7 laminated on the surface are removed, and as shown in FIG.
A light emitting portion including the light emitting layer 6 and the back electrode 8 is formed.
【０００８】このようにして形成された発光部は、透明
電極２と背面電極８との間の所定の交点に所定の電流を
流して発光層が発光する、いわゆるドットマトリックス
方式により駆動される。The light emitting portion thus formed is driven by a so-called dot matrix method in which a predetermined current is applied to a predetermined intersection between the transparent electrode 2 and the back electrode 8 so that the light emitting layer emits light.
【０００９】[0009]
【発明が解決しようとする課題】上記従来の技術の場
合、発光層の有機ＥＬ材料は化学的に脆弱な材料であ
り、特に水分の存在下や７０℃を越える熱に対し、容易
に劣化するため、エッチング等によるパターン化が極め
て難しかった。In the case of the above-mentioned prior art, the organic EL material of the light emitting layer is a chemically fragile material, and easily deteriorates particularly in the presence of moisture or heat exceeding 70 ° C. Therefore, patterning by etching or the like was extremely difficult.
【００１０】また透明電極２の全面に塗布されるレジス
ト材料３は厚さが厚く、さらに断面が略逆三角形状のレ
ジストパターン４を形成するには、露光によるパターニ
ング、エッチング等の化学処理、及び洗浄等の工程が複
雑で、多くの労力と時間を必要とするため製造コストを
抑えることが難しかった。特にエッチング後の洗浄は、
レジストパターン４の影の部分９に化学物質が残りやす
いので、十分に行う必要があった。The resist material 3 applied to the entire surface of the transparent electrode 2 has a large thickness, and a resist pattern 4 having a substantially inverted triangular cross section is formed by chemical treatment such as patterning by exposure and etching. Since the steps such as cleaning are complicated and require a lot of labor and time, it has been difficult to suppress the production cost. Especially after cleaning,
Since the chemical substance is likely to remain in the shadow portion 9 of the resist pattern 4, it is necessary to perform the cleaning sufficiently.
【００１１】さらに背面電極８を形成する際、レジスト
パターン４の影の部分９に背面電極材料７が付着しない
ようにするため、背面電極材料７の蒸着方向は基板１面
とほぼ垂直な方向に限定された。このため背面電極材料
７の蒸着には、通常用いられる基板回転等の技法を用い
ることができなかった。また大きな面積を有した基板１
においては、放射状に広がる蒸着源が使用できないた
め、蒸着源を多点化するか、あるいは基板１を移動させ
て小面積の蒸着を繰り返し行う等の処理が必要となり、
非常に面倒なものであった。Further, when the back electrode 8 is formed, the back electrode material 7 is deposited in a direction substantially perpendicular to the surface of the substrate 1 in order to prevent the back electrode material 7 from adhering to the shadow portions 9 of the resist pattern 4. Limited. For this reason, for the deposition of the back electrode material 7, a commonly used technique such as substrate rotation could not be used. Also, a substrate 1 having a large area
In the case, since a vapor deposition source that spreads radially cannot be used, it is necessary to increase the number of vapor deposition sources, or to perform a process such as repeating the deposition of a small area by moving the substrate 1,
It was very troublesome.
【００１２】一方、背面電極８を形成する他の方法とし
て、エッチング用のマスクに細線を等間隔で平行に配置
して固定したマスクを用いるものがある。このマスクの
細線が透明電極２と略直交するように設け、エッチング
により背面電極８を形成する場合は、マスクの平行な細
線の形成が難しく、さらにマスクの細線に引張力が十分
に働かないため、マスク細線の中央部付近で細線がたる
んだり、平行な間隔が不揃いになる等の問題点を有して
いた。On the other hand, as another method of forming the back electrode 8, there is a method using a mask in which fine lines are arranged in parallel at equal intervals and fixed as an etching mask. When the thin line of the mask is provided so as to be substantially orthogonal to the transparent electrode 2 and the back electrode 8 is formed by etching, it is difficult to form a thin line parallel to the mask, and furthermore, the tensile force does not sufficiently act on the thin line of the mask. In addition, there have been problems such as slackening of the thin line near the center of the mask thin line and uneven parallel intervals.
【００１３】また、マスクに金属ワイヤを用いた場合、
塑性変形により金属ワイヤに巻癖が残っており、これを
張力で消すには大きな力を必要とし、さらにこの巻癖及
びそれをとるための張力によりフレームに歪みが生じ、
フレームの平面度を得ることが難しかった。また金属ワ
イヤーをフレームに取り付ける際、固定するには大きな
力をかけてクランプする必要があり、このことも歪みが
生じる原因の一つとされていた。When a metal wire is used for the mask,
A curl remains on the metal wire due to plastic deformation, a large force is required to eliminate it with tension, and furthermore, the curl and the tension for removing it cause distortion in the frame,
It was difficult to obtain the flatness of the frame. Also, when attaching the metal wire to the frame, it is necessary to clamp it with a large force to fix it, which is also one of the causes of the distortion.
【００１４】この発明は上記従来の技術の問題点に鑑み
てなされたものであり、有機ＥＬ材料を劣化させること
なく、ストライプ状の背面電極を容易に形成することが
可能なＥＬ素子の製造方法を提供することを目的とした
ものである。The present invention has been made in view of the above-mentioned problems of the prior art, and a method of manufacturing an EL element capable of easily forming a striped back electrode without deteriorating an organic EL material. The purpose is to provide.
【００１５】[0015]
【課題を解決するための手段】この発明のＥＬ素子の製
造方法は、ガラスや樹脂等の透明な基板表面に透明な電
極材料により所定のピッチでストライプ状となるように
透明電極を形成し、この透明電極にＥＬ材料からなる発
光層を蒸着等の真空薄膜形成技術により積層し、上記発
光層の表面に、上記透明電極に対向し、直交する方向に
ストライプ状に所定のピッチにＡｌ−Ｌｉ等の背面電極
を形成するＥＬ素子の製造方法である。まず、予め所定
の伸びのストレスが加えられた状態の単繊維形状の樹脂
線状材料を、所定の開口部を有したフレームのその開口
部に等間隔で平行に配列し固定してマスクフレームを形
成し、上記背面電極を形成する際に、上記マスクフレー
ムの上記樹脂線状材料を上記基板面に対面させ、上記樹
脂線状材料を介して上記基板面に真空薄膜形成技術によ
り背面電極材料を付着させ、上記マスクフレームの上記
樹脂線状材料を取り除いてストライプ状の上記背面電極
を形成するＥＬ素子の製造方法である。According to a method of manufacturing an EL device of the present invention, a transparent electrode is formed on a transparent substrate surface such as glass or resin with a transparent electrode material so as to form stripes at a predetermined pitch. A light emitting layer made of an EL material is laminated on the transparent electrode by a vacuum thin film forming technique such as vapor deposition, and Al-Li is formed on the surface of the light emitting layer at a predetermined pitch in a stripe shape facing the transparent electrode in a direction orthogonal to the transparent electrode. This is a method for manufacturing an EL element for forming a back electrode. First, a monofilament-shaped resin linear material in a state where a predetermined elongation stress is applied in advance is arranged and fixed at equal intervals in the opening portion of a frame having a predetermined opening portion to fix the mask frame. Forming, when forming the back electrode, the resin linear material of the mask frame is opposed to the substrate surface, the rear electrode material by vacuum thin film forming technology on the substrate surface via the resin linear material. This is a method for manufacturing an EL element in which the stripe-shaped back electrode is formed by attaching the mask frame and removing the resin linear material of the mask frame.
【００１６】また、上記マスクフレームは、上記透明電
極形成面全面に上記発光層を形成した後、この発光層に
対面させて配置し、上記透明電極と上記線状材料が略直
交するように位置させ、真空薄膜形成技術により背面電
極材料を設けるＥＬ素子の製造方法である。上記線状材
料は、イミド系樹脂の単繊維であり、接着剤で上記フレ
ームに固定するものである。The mask frame is formed such that the light emitting layer is formed on the entire surface on which the transparent electrode is formed, and the mask frame is disposed so as to face the light emitting layer. The mask frame is positioned so that the transparent electrode and the linear material are substantially orthogonal to each other. This is a method for manufacturing an EL element in which a back electrode material is provided by a vacuum thin film forming technique. The linear material is a single fiber of an imide resin, and is fixed to the frame with an adhesive.
【００１７】[0017]
【発明の実施の形態】以下、この発明の実施形態につい
て図面に基づいて説明する。この実施形態の有機ＥＬ素
子１０は、ガラスや石英、樹脂等の透明な基板１２の一
方の表面に、ＩＴＯ等の透明な電極材料による透明電極
１４が形成されている。この透明電極１４は、所定のピ
ッチでストライプ状に形成されている。また透明電極１
４の表面には、５００Å程度のホール輸送材料、及び５
００Å程度の電子輸送材料、その他発光材料によるＥＬ
材料からなる発光層１６が積層されている。そして発光
層１６の表面には、Ｌｉを０．０１〜０．０５％程度含
む純度９９％程度のＡｌ−Ｌｉ合金、その他Ａｌ−Ｍｇ
等の陰極材料による背面電極２８が、適宜の５００Å〜
１０００Å程度の厚みで積層されている。この背面電極
２８は、透明電極１４と直交して対向し、ストライプ状
に形成されている。これら基板１２上に積層された透明
電極１４から背面電極２８までが発光部を形成する。Embodiments of the present invention will be described below with reference to the drawings. In the organic EL element 10 of this embodiment, a transparent electrode 14 made of a transparent electrode material such as ITO is formed on one surface of a transparent substrate 12 made of glass, quartz, resin or the like. The transparent electrodes 14 are formed in stripes at a predetermined pitch. Transparent electrode 1
On the surface of 4, a hole transporting material of about 500 ° and 5
EL with electron transporting material of about 00Å and other luminescent materials
A light emitting layer 16 made of a material is laminated. On the surface of the light emitting layer 16, an Al-Li alloy containing about 0.01 to 0.05% of Li and having a purity of about 99%, and other Al-Mg
Back electrode 28 made of a cathode material such as
The layers are laminated at a thickness of about 1000 °. The back electrode 28 is orthogonally opposed to the transparent electrode 14 and is formed in a stripe shape. The area from the transparent electrode 14 laminated on the substrate 12 to the back electrode 28 forms a light emitting section.
【００１８】ここで発光層１６は、母胎材料のうちホー
ル輸送材料としては、トリフェニルアミン誘導体（ＴＰ
Ｄ）、ヒドラゾン誘導体、アリールアミン誘導体等があ
る。一方、電子輸送材料としては、アルミキレート錯体
（Ａｌｑ３）、ジスチリルビフェニル誘導体（ＤＰＶＢ
ｉ）、オキサジアゾール誘導体、ビスチリルアントラセ
ン誘導体、ベンゾオキサゾールチオフェン誘導体、ペリ
レン類、チアゾール類等を用いる。さらに適宜の発光材
料を混合してもよく、ホール輸送材料と電子輸送材料を
混合した発光層を形成してもよく、その場合、ホール輸
送材料と電子輸送材料の比は、１０：９０乃至９０：１
０の範囲で適宜変更可能である。Here, the light emitting layer 16 is formed of a triphenylamine derivative (TP
D), hydrazone derivatives, arylamine derivatives and the like. On the other hand, as electron transporting materials, aluminum chelate complex (Alq 3 ), distyrylbiphenyl derivative (DPVB
i), oxadiazole derivatives, bistyrylanthracene derivatives, benzoxazolethiophene derivatives, perylenes, thiazoles and the like are used. Further, an appropriate light emitting material may be mixed, or a light emitting layer in which a hole transport material and an electron transport material are mixed may be formed. In this case, the ratio of the hole transport material to the electron transport material is 10:90 to 90. : 1
It can be changed appropriately within the range of 0.
【００１９】さらに少なくとも発光部の全面を覆うよう
に、図示しない撥水膜や保護膜が形成されている。これ
らの材料はＥＬ材料と反応せず、硬化する際に変形や縮
小等の機械的ストレスを与えることがない材料であれば
よく、また発光部２０の耐熱性が高くないので、硬化等
に際して１００℃以下で付着可能な材料であることが望
ましい。従って樹脂材料は、常温硬化型あるいはＵＶ硬
化型の樹脂で、気密性が高い材料からなり、透光性、透
気性、含水性を有しないものがよい。Further, a water-repellent film and a protective film (not shown) are formed so as to cover at least the entire surface of the light emitting section. These materials do not have to react with the EL material and do not give a mechanical stress such as deformation or shrinkage upon curing. Further, since the heat resistance of the light emitting section 20 is not high, 100% It is desirable that the material be a material that can be attached at a temperature of not more than ° C. Therefore, the resin material is preferably a room-temperature-curable or UV-curable resin, which is made of a material having high airtightness and does not have translucency, air permeability, or water content.
【００２０】図１（ａ）〜図１（ｃ）は、この発明のＥ
Ｌ素子の一実施形態とその製造工程を示す。この実施形
態のＥＬ素子の製造方法は、ガラスや石英、樹脂等の透
明な基板１２の表面全面に、ＩＴＯ等の透明な電極材料
を蒸着等により設け、この表面にレジストを塗布し、所
定のピッチを有するストライプ状のパターンを重ねる。
次に露光、現像してストライプ状のパターンに対応した
形状にレジストを残す。そして透明な電極材料をエッチ
ング処理し、所望のストライプ状の透明電極１４を形成
する。FIGS. 1A to 1C show the E of the present invention.
1 shows an embodiment of an L element and a manufacturing process thereof. In the method for manufacturing an EL element according to this embodiment, a transparent electrode material such as ITO is provided on the entire surface of a transparent substrate 12 such as glass, quartz, resin, or the like by vapor deposition or the like, and a resist is applied to the surface. A stripe pattern having a pitch is overlapped.
Next, the resist is exposed and developed to leave a resist in a shape corresponding to the stripe pattern. Then, the transparent electrode material is etched to form a desired striped transparent electrode 14.
【００２１】次に透明電極１４の表面に、例えばＥＬ材
料としてＴＰＤ等のホール輸送材料からなるホール輸送
層、Ａｌｑ３等の電子輸送材料からなる電子輸送層やそ
の他発光材料からなる層を、真空蒸着やスパッタリン
グ、その他真空薄膜形成技術により積層し、発光層１６
を形成する。[0021] Then the surface of the transparent electrode 14, for example, a hole transport layer made of a hole transporting material TPD such as EL material, a layer formed of an electron transporting layer or other light-emitting material formed of an electron transporting material such as Alq 3, the vacuum The light emitting layer 16 is laminated by vapor deposition, sputtering, or other vacuum thin film forming techniques.
To form
【００２２】蒸着条件として、例えば、真空度が６×１
０−６Ｔｏｒｒで、ＥＬ材料の場合５０Å／ｓｅｃの蒸
着速度で成膜させる。また発光層１４等は、フラッシュ
蒸着により形成してもよい。フラッシュ蒸着法は、予め
所定の比率で混合したＥＬ材料を、３００℃〜６００℃
好ましくは４００℃〜５００℃に加熱した蒸着源に落下
させ、ＥＬ材料を一気に蒸発させるものである。またそ
のＥＬ材料を容器中に収容し、急速にその容器を加熱
し、一気に蒸着させるものでもよい。The deposition conditions include, for example, a degree of vacuum of 6 × 1
In 0 -6 Torr, thereby deposited at a deposition rate in the case 50 Å / sec of the EL material. The light emitting layer 14 and the like may be formed by flash evaporation. In the flash evaporation method, an EL material previously mixed at a predetermined ratio is heated to 300 ° C. to 600 ° C.
Preferably, the EL material is dropped onto a deposition source heated to 400 ° C. to 500 ° C. to evaporate the EL material at a stretch. Alternatively, the EL material may be housed in a container, and the container may be rapidly heated and vapor-deposited at once.
【００２３】次に背面電極２８の蒸着に際して、ステン
レス等の合金や金属、樹脂等の変形しにくい材料からな
る矩形の環状のフレーム１８の表面に、ストライプ状の
マスク２２を設ける。マスク２２は、ポリイミド系のア
ラミド繊維などの耐熱性のある樹脂線状材料である単繊
維を等間隔にフレーム１８の開口部に配置したものであ
る。この単繊維は、例えば直径が約７０μｍで、０．５
ｍｍ程度のピッチで等間隔にフレーム１８の開口部に配
置させた後、長手方向に約３％伸張し所定の張力を付与
したものである。フレーム１８との固定部は、単繊維を
接着剤２０を介して、予め所定の治具により等間隔で平
行に配置し、例えば約３％伸張した状態の単繊維をフレ
ーム１８に接着固定し、図２に示すようなマスクフレー
ム２４を形成する。単繊維によるマスク２２は、接着剤
２０の厚みにより高さ、及び位置がずれないように各単
繊維に対して平行にスキージを当て平面化する。Next, at the time of vapor deposition of the back electrode 28, a stripe-shaped mask 22 is provided on the surface of the rectangular ring-shaped frame 18 made of a material such as stainless steel or the like, a metal, a resin or the like which is difficult to deform. The mask 22 is formed by disposing single fibers, which are heat-resistant resin linear materials such as polyimide-based aramid fibers, at equal intervals in the opening of the frame 18. This single fiber has, for example, a diameter of about 70 μm and a diameter of about 0.5 μm.
After being arranged at equal intervals in the opening of the frame 18 at a pitch of about mm, it is stretched about 3% in the longitudinal direction and given a predetermined tension. The fixed portion to the frame 18 is arranged in advance by a predetermined jig via an adhesive 20 in parallel with a predetermined jig at an equal interval, and for example, a single fiber stretched by about 3% is fixed to the frame 18 by bonding. A mask frame 24 as shown in FIG. 2 is formed. The mask 22 made of single fibers is flattened by applying a squeegee in parallel to each single fiber so that the height and the position are not shifted by the thickness of the adhesive 20.
【００２４】フレーム１８は、外形が基板１２よりも大
きく、例えば、内側の開口部の空間の大きさは３００×
３００ｍｍ、フレーム１８の外形の大きさは３８０×３
８０ｍｍ程度の矩形状の枠で、マスク２２を形成する単
繊維を接着する表面は平坦な面である。The outer shape of the frame 18 is larger than that of the substrate 12, for example, the size of the space of the inner opening is 300 ×
300 mm, external dimensions of frame 18 are 380 × 3
The surface to which the single fibers forming the mask 22 are bonded is a flat surface with a rectangular frame of about 80 mm.
【００２５】また接着剤は、流動性に優れ、フレーム１
８に均一な厚さで塗布することができ、またマスク２２
の単繊維とフレーム１８を確実に接着固定するもので、
３０分程度で硬化することが望ましい。The adhesive has excellent fluidity, and the frame 1
8 can be applied in a uniform thickness and the mask 22
To securely bond and fix the monofilament and the frame 18.
It is desirable to cure in about 30 minutes.
【００２６】マスク２２の単繊維は、例えば直径が約７
０μｍの繊維で、０．５ｍｍ程度のピッチで等間隔にフ
レーム１８の開口部に配置した後、長手方向に約３％伸
張したものである。The single fiber of the mask 22 has, for example, a diameter of about 7
Fibers of 0 μm are arranged at equal intervals in the opening of the frame 18 at a pitch of about 0.5 mm and then stretched about 3% in the longitudinal direction.
【００２７】次に基板１２上に、単繊維によるマスク２
２を形成したマスクフレーム２４を重ね合わせ、図１
（ａ）に示すようにマスク２２の単繊維の長手方向とス
トライプ状の透明電極１４のストライプ方向が直交する
ように、発光層１６上にマスク２２を重ね合わせる。ま
たこのときマスクフレーム２４は、図３に示すように、
基板１２に対して蒸着源側に位置し、マスク２２が発光
層１６に押し当てられた状態とする。Next, a mask 2 made of a single fiber is placed on the substrate 12.
2 are superimposed on the mask frame 24 on which
As shown in (a), the mask 22 is superimposed on the light emitting layer 16 such that the longitudinal direction of the single fiber of the mask 22 and the stripe direction of the striped transparent electrode 14 are orthogonal to each other. At this time, as shown in FIG.
The mask 22 is located on the side of the deposition source with respect to the substrate 12 and is in a state where the mask 22 is pressed against the light emitting layer 16.
【００２８】次に、Ｌｉを０．０１〜０．０５％程度含
む純度９９％程度のＡｌ−Ｌｉ合金、その他Ａｌ−Ｍｇ
等の陰極材料からなる背面電極材料２６を、発光層１６
及びマスク２２の表面に真空蒸着等の真空薄膜形成技術
により図１（ｂ）に示すように設ける。このときマスク
２２間の発光層１６上には均一の厚さの背面電極材料２
６が形成される。Next, an Al-Li alloy containing about 0.01 to 0.05% of Li and having a purity of about 99%, other Al-Mg
The back electrode material 26 made of a cathode material such as
1B, and is provided on the surface of the mask 22 by a vacuum thin film forming technique such as vacuum deposition. At this time, the back electrode material 2 having a uniform thickness is formed on the light emitting layer 16 between the masks 22.
6 are formed.
【００２９】その後マスクフレーム２４を基板１２から
取り外し、図１（ｃ）に示すように、隣接する背面電極
２８が、マスク２２による領域によって互いに絶縁され
たストライプ状に形成される。After that, the mask frame 24 is removed from the substrate 12, and the adjacent back electrodes 28 are formed in stripes insulated from each other by the region of the mask 22, as shown in FIG.
【００３０】マスクフレーム２４のマスク２２は、およ
そ２０回程度繰り返し使用することができ、それ以後は
マスク２２の単繊維と接着剤２０を除去し、上記と同様
の方法でフレーム１８に新しい単繊維を接着してマスク
２２を設ける。The mask 22 of the mask frame 24 can be used repeatedly about 20 times, after which the single fibers of the mask 22 and the adhesive 20 are removed, and a new single fiber is attached to the frame 18 in the same manner as described above. Are bonded to form a mask 22.
【００３１】この後、発光層１６と背面電極２８の全面
に、図示しないＳｉＯ等の絶縁性の保護膜等を、真空蒸
着やスパッタリング、その他真空薄膜形成技術により形
成してもよい。さらに、撥水膜や樹脂の保護膜等を設け
てもよい。Thereafter, an insulating protective film such as SiO, not shown, may be formed on the entire surface of the light emitting layer 16 and the back electrode 28 by vacuum evaporation, sputtering, or other vacuum thin film forming techniques. Further, a water repellent film, a resin protective film, or the like may be provided.
【００３２】この実施形態のＥＬ素子の製造方法によれ
ば、樹脂系の単繊維のマスクフレーム２４を用いて背面
電極２８を形成することにより、製造工程が少なく簡単
なものとなった。またマスクフレーム２４のマスク２２
に耐熱性の単繊維を用いることにより、巻癖がないこと
から、通常の接着剤２０でフレーム１８に固定すること
が可能である。さらに背面電極材料２６の蒸着時に生じ
るマスク２２の熱膨張によるたわみは、予め伸びたスト
レスを加えているため吸収され、発光層１６への密着性
や平行性が失われることもない。According to the EL element manufacturing method of this embodiment, the back electrode 28 is formed using the resin-based single-fiber mask frame 24, thereby simplifying the manufacturing steps. Also, the mask 22 of the mask frame 24
By using a heat-resistant single fiber, there is no curl, so that it can be fixed to the frame 18 with a normal adhesive 20. Furthermore, the deflection due to the thermal expansion of the mask 22 generated during the deposition of the back electrode material 26 is absorbed by the application of the pre-stretched stress, and the adhesion to the light emitting layer 16 and the parallelism are not lost.
【００３３】なおこの発明のＥＬ素子の製造方法は、上
記実施形態に限定されるものではなく、マスクの本数や
間隔、大きさは透明電極等に対応させて適宜設定するこ
とができる。またフレームの形状は基板よりも大きな内
部空間を有し、マスクにより歪みが生じないものであれ
ばよく、また接着剤以外の材料を用いてフレームに固定
してもよい。また背面電極は、Ａｌ、Ｌｉ、Ａｇ、Ｍ
ｇ、Ｉｎ等の金属またはこれらの合金を用いるよい。The method of manufacturing an EL device according to the present invention is not limited to the above embodiment, and the number, spacing, and size of masks can be appropriately set in accordance with a transparent electrode or the like. Further, the shape of the frame may be any shape as long as it has an internal space larger than that of the substrate and does not cause distortion by the mask, or may be fixed to the frame using a material other than the adhesive. The back electrode is made of Al, Li, Ag, M
A metal such as g or In or an alloy thereof may be used.
【００３４】[0034]
【発明の効果】この発明のＥＬ素子の製造方法によれ
ば、フレームのマスクに単繊維形状の樹脂系材料を用い
ているので、製造途中でたるみよじれが発生せず、しか
もフレームに変形を生じさせるような張力を必要とせ
ず、等間隔で互いに平行なストライプ状のマスクを形成
することができ、良好な背面電極を形成することができ
る。According to the method of manufacturing an EL element of the present invention, since a single fiber resin material is used for the mask of the frame, no sagging or kinking occurs during the manufacturing and the frame is deformed. It is possible to form striped masks that are parallel to each other at equal intervals without the need for a tension that causes the back electrode to be formed.
【図１】この発明の一実施形態のＥＬ素子の製造工程
（ａ）〜（ｃ）を示す断面図である。FIG. 1 is a sectional view showing manufacturing steps (a) to (c) of an EL element according to an embodiment of the present invention.
【図２】この発明の一実施形態のマスクフレームを示す
平面図である。FIG. 2 is a plan view showing a mask frame according to one embodiment of the present invention.
【図３】この発明の一実施形態の基板上の発光層にマス
クフレームを取り付けた状態を示す断面図である。FIG. 3 is a cross-sectional view showing a state where a mask frame is attached to a light emitting layer on a substrate according to an embodiment of the present invention.
【図４】従来のＥＬ素子の製造工程（ａ）〜（ｄ）を示
す断面図である。4A to 4D are cross-sectional views showing manufacturing steps (a) to (d) of a conventional EL element.
１２ 基板 １４ 透明電極 １６ 発光層 １８ フレーム ２０ 接着剤 ２２ マスク ２４ マスクフレーム ２６ 背面電極材料 ２８ 背面電極 DESCRIPTION OF SYMBOLS 12 Substrate 14 Transparent electrode 16 Light emitting layer 18 Frame 20 Adhesive 22 Mask 24 Mask frame 26 Back electrode material 28 Back electrode
【手続補正書】[Procedure amendment]
【提出日】平成１０年９月２１日（１９９８．９．２
１）[Submission date] September 21, 1998 (1998.9.2)
1)
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】全文[Correction target item name] Full text
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【書類名】 明細書[Document Name] Statement
【発明の名称】 ＥＬ素子の製造方法Patent application title: Manufacturing method of EL element
【特許請求の範囲】[Claims]
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【発明の属する技術分野】この発明は、平面光源やディ
スプレイ、その他所定のパターン等の発光表示に用いら
れるＥＬ素子の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an EL element used for light-emitting display such as a flat light source, a display, and other predetermined patterns.
【０００２】[0002]
【従来の技術】従来、有機ＥＬ（エレクトルミネッセン
ス）素子は、図４に示すように、ガラス等からなる透明
な基板１に、透光性のＩＴＯ膜を一面に形成し、所定の
ストライプ状にエッチングして透明電極２を形成してい
た。そして、透明電極２の全面に、図４（ａ）に示すよ
うに、レジスト材料３を塗布し、このレジスト材料３の
表面に透明電極２と略直交するストライプ状のレジスト
用パターンを配置し、露光し現像する。2. Description of the Related Art Conventionally, as shown in FIG. 4, an organic EL (electroluminescence) element is formed by forming a transparent ITO film on a transparent substrate 1 made of glass or the like on one surface and forming a predetermined stripe shape. The transparent electrode 2 was formed by etching. 4A, a resist material 3 is applied on the entire surface of the transparent electrode 2, and a stripe-shaped resist pattern substantially perpendicular to the transparent electrode 2 is disposed on the surface of the resist material 3. Exposure and development.
【０００３】次に不要な部分のレジスト材料３を化学処
理により除去する。このときレジスト材料３の表面付近
は露光により固くなるが、透明電極２付近のレジスト材
料３は柔らかいため溶けやすく、図４（ｂ）に示すよう
に、断面が略逆三角形のレジストパターン４が形成され
る。Next, an unnecessary portion of the resist material 3 is removed by a chemical treatment. At this time, the vicinity of the surface of the resist material 3 is hardened by exposure, but the resist material 3 near the transparent electrode 2 is soft and easily melted, and as shown in FIG. 4B, a resist pattern 4 having a substantially inverted triangular cross section is formed. Is done.
【０００４】次に図４（ｃ）に示すように、透明電極２
及びレジストパターン４の表面に有機ＥＬ材料５を全面
蒸着により薄膜として設け、レジストパターン４間の透
明電極２上に発光層６を形成する。さらに発光層６の表
面及びレジストパターン４上の有機ＥＬ材料５の表面に
蒸着等により背面電極材料７を設け、レジストパターン
４間に背面電極８を形成する。[0004] Next, as shown in FIG.
An organic EL material 5 is provided on the surface of the resist pattern 4 as a thin film by vapor deposition, and a light emitting layer 6 is formed on the transparent electrode 2 between the resist patterns 4. Further, a back electrode material 7 is provided on the surface of the light emitting layer 6 and the surface of the organic EL material 5 on the resist pattern 4 by vapor deposition or the like, and a back electrode 8 is formed between the resist patterns 4.
【０００５】このとき、レジストパターン４の逆三角形
の底面と透明電極２間に設けられた影の部分９には、蒸
着等による有機ＥＬ材料５及び背面電極材料７は付着し
ないことから、レジストパターン４による陰の部分９を
挟んで、隣接する各発光層６と背面電極８は互いに絶縁
される。これにより、背面電極８は、透明電極２と対向
し、略直交するストライプ状に形成される。At this time, since the organic EL material 5 and the back electrode material 7 by vapor deposition or the like do not adhere to the shadow portion 9 provided between the inverted triangular bottom surface of the resist pattern 4 and the transparent electrode 2, the resist pattern Each of the adjacent light emitting layers 6 and the back electrode 8 are insulated from each other with the shaded portion 9 of 4 interposed therebetween. Thus, the back electrode 8 is formed in a stripe shape that faces the transparent electrode 2 and is substantially orthogonal.
【０００６】ここで、有機ＥＬ材料５は、トリフェニル
アミン誘導体（ＴＰＤ）等のホール輸送材料と、発光材
料であるアルミキレート錯体（Ａｌｑ３）等の電子輸送
材料からなる。発光層６は、ホール輸送材料の上に電子
輸送材料を積層したものや、これらの混合層からなる。
また、背面電極材料７は、Ａｌ、Ｌｉ、Ａｇ、Ｍｇ、Ｉ
ｎ等の金属またはこれらの合金からなる。Here, the organic EL material 5 comprises a hole transporting material such as a triphenylamine derivative (TPD) and an electron transporting material such as an aluminum chelate complex (Alq 3 ) which is a light emitting material. The light emitting layer 6 is composed of a layer in which an electron transporting material is laminated on a hole transporting material, or a mixed layer thereof.
The back electrode material 7 is made of Al, Li, Ag, Mg, I
n or a metal thereof.
【０００７】次に、レジストパターン４と、この表面に
積層された有機ＥＬ材料５及び背面電極材料７を除去
し、図４（ｄ）に示すように、基板１上に透明電極２、
発光層６、背面電極８からなる発光部を形成する。Next, the resist pattern 4, the organic EL material 5 and the back electrode material 7 laminated on the surface are removed, and as shown in FIG.
A light emitting portion including the light emitting layer 6 and the back electrode 8 is formed.
【０００８】このようにして形成された発光部は、透明
電極２と背面電極８との間の所定の交点に所定の電流を
流して発光層が発光する、いわゆるドットマトリックス
方式により駆動される。The light emitting portion thus formed is driven by a so-called dot matrix method in which a predetermined current is applied to a predetermined intersection between the transparent electrode 2 and the back electrode 8 so that the light emitting layer emits light.
【０００９】[0009]
【発明が解決しようとする課題】上記従来の技術の場
合、発光層の有機ＥＬ材料は化学的に脆弱な材料であ
り、特に水分の存在下や７０℃を越える熱に対し、容易
に劣化するため、エッチング等によるパターン化が極め
て難しかった。In the case of the above-mentioned prior art, the organic EL material of the light emitting layer is a chemically fragile material, and easily deteriorates particularly in the presence of moisture or heat exceeding 70 ° C. Therefore, patterning by etching or the like was extremely difficult.
【００１０】また透明電極２の全面に塗布されるレジス
ト材料３は厚さが厚く、さらに断面が略逆三角形状のレ
ジストパターン４を形成するには、露光によるパターニ
ング、エッチング等の化学処理、及び洗浄等の工程が複
雑で、多くの労力と時間を必要とするため製造コストを
抑えることが難しかった。特にエッチング後の洗浄は、
レジストパターン４の影の部分９に化学物質が残りやす
いので、十分に行う必要があった。The resist material 3 applied to the entire surface of the transparent electrode 2 has a large thickness, and a resist pattern 4 having a substantially inverted triangular cross section is formed by chemical treatment such as patterning by exposure and etching. Since the steps such as cleaning are complicated and require a lot of labor and time, it has been difficult to suppress the production cost. Especially after cleaning,
Since the chemical substance is likely to remain in the shadow portion 9 of the resist pattern 4, it is necessary to perform the cleaning sufficiently.
【００１１】さらに背面電極８を形成する際、レジスト
パターン４の影の部分９に背面電極材料７が付着しない
ようにするため、背面電極材料７の蒸着方向は基板１面
とほぼ垂直な方向に限定された。このため背面電極材料
７の蒸着には、通常用いられる基板回転等の技法を用い
ることができなかった。また大きな面積を有した基板１
においては、放射状に広がる蒸着源が使用できないた
め、蒸着源を多点化するか、あるいは基板１を移動させ
て小面積の蒸着を繰り返し行う等の処理が必要となり、
非常に面倒なものであった。Further, when the back electrode 8 is formed, the back electrode material 7 is deposited in a direction substantially perpendicular to the surface of the substrate 1 in order to prevent the back electrode material 7 from adhering to the shadow portions 9 of the resist pattern 4. Limited. For this reason, for the deposition of the back electrode material 7, a commonly used technique such as substrate rotation could not be used. Also, a substrate 1 having a large area
In the case, since a vapor deposition source that spreads radially cannot be used, it is necessary to increase the number of vapor deposition sources, or to perform a process such as repeating the deposition of a small area by moving the substrate 1,
It was very troublesome.
【００１２】一方、背面電極８を形成する他の方法とし
て、エッチング用のマスクに細線を等間隔で平行に配置
して固定したマスクを用いるものがある。このマスクの
細線が透明電極２と略直交するように設け、エッチング
により背面電極８を形成する場合は、マスクの平行な細
線の形成が難しく、さらにマスクの細線に引張力が十分
に働かないため、マスク細線の中央部付近で細線がたる
んだり、平行な間隔が不揃いになる等の問題点を有して
いた。On the other hand, as another method of forming the back electrode 8, there is a method using a mask in which fine lines are arranged in parallel at equal intervals and fixed as an etching mask. When the thin line of the mask is provided so as to be substantially orthogonal to the transparent electrode 2 and the back electrode 8 is formed by etching, it is difficult to form a thin line parallel to the mask, and furthermore, the tensile force does not sufficiently act on the thin line of the mask. In addition, there have been problems such as slackening of the thin line near the center of the mask thin line and uneven parallel intervals.
【００１３】また、マスクに金属ワイヤを用いた場合、
塑性変形により金属ワイヤに巻癖が残っており、これを
張力で消すには大きな力を必要とし、さらにこの巻癖及
びそれをとるための張力によりフレームに歪みが生じ、
フレームの平面度を得ることが難しかった。また金属ワ
イヤーをフレームに取り付ける際、固定するには大きな
力をかけてクランプする必要があり、このことも歪みが
生じる原因の一つとされていた。When a metal wire is used for the mask,
A curl remains on the metal wire due to plastic deformation, a large force is required to eliminate it with tension, and furthermore, the curl and the tension for removing it cause distortion in the frame,
It was difficult to obtain the flatness of the frame. Also, when attaching the metal wire to the frame, it is necessary to clamp it with a large force to fix it, which is also one of the causes of the distortion.
【００１４】この発明は上記従来の技術の問題点に鑑み
てなされたものであり、有機ＥＬ材料を劣化させること
なく、ストライプ状の背面電極を容易に形成することが
可能なＥＬ素子の製造方法を提供することを目的とした
ものである。The present invention has been made in view of the above-mentioned problems of the prior art, and a method of manufacturing an EL element capable of easily forming a striped back electrode without deteriorating an organic EL material. The purpose is to provide.
【００１５】[0015]
【課題を解決するための手段】この発明のＥＬ素子の製
造方法は、ガラスや樹脂等の透明な基板表面に透明な電
極材料により所定のピッチでストライプ状となるように
透明電極を形成し、この透明電極にＥＬ材料からなる発
光層を蒸着等の真空薄膜形成技術により積層し、上記発
光層の表面に、上記透明電極に対向し、直交する方向に
ストライプ状に所定のピッチでＡｌ−Ｌｉ等の背面電極
を形成するＥＬ素子の製造方法である。まず、予め所定
の伸びのストレスが加えられた状態の単繊維の樹脂線状
材料を、所定の開口部を有したフレームのその開口部に
等間隔で平行に配列し固定してマスクフレームを形成
し、上記背面電極を形成する際に、上記マスクフレーム
の上記樹脂線状材料を上記基板面に対面させ、上記樹脂
線状材料を介して上記基板面に真空薄膜形成技術により
背面電極材料を付着させ、この後上記マスクフレームの
上記樹脂線状材料を取り除いてストライプ状の上記背面
電極を形成するＥＬ素子の製造方法である。According to a method of manufacturing an EL device of the present invention, a transparent electrode is formed on a transparent substrate surface such as glass or resin with a transparent electrode material so as to form stripes at a predetermined pitch. A light emitting layer made of an EL material is laminated on the transparent electrode by a vacuum thin film forming technique such as vapor deposition, and Al-Li is formed on the surface of the light emitting layer at a predetermined pitch in a stripe shape facing the transparent electrode in a direction orthogonal to the transparent electrode. This is a method for manufacturing an EL element for forming a back electrode. First, a monofilament resin linear material to which a predetermined elongation stress has been applied in advance is arranged and fixed at equal intervals in the opening of a frame having a predetermined opening to form a mask frame. Then, when forming the back electrode, the resin linear material of the mask frame is opposed to the substrate surface, and the back electrode material is attached to the substrate surface via the resin linear material by a vacuum thin film forming technique. Then, the resin line material of the mask frame is removed to form the stripe-shaped back electrode.
【００１６】また、上記マスクフレームは、上記透明電
極形成面全面に上記発光層を形成した後、この発光層に
対面させて配置し、上記透明電極と上記線状材料が略直
交するように位置させ、真空薄膜形成技術により背面電
極材料を設けるＥＬ素子の製造方法である。上記線状材
料は、イミド系樹脂の単繊維であり、接着剤で上記フレ
ームに固定するものである。The mask frame is formed such that the light emitting layer is formed on the entire surface on which the transparent electrode is formed, and the mask frame is disposed so as to face the light emitting layer. The mask frame is positioned so that the transparent electrode and the linear material are substantially orthogonal to each other. This is a method for manufacturing an EL element in which a back electrode material is provided by a vacuum thin film forming technique. The linear material is a single fiber of an imide resin, and is fixed to the frame with an adhesive.
【００１７】[0017]
【発明の実施の形態】以下、この発明の実施形態につい
て図面に基づいて説明する。この実施形態の有機ＥＬ素
子１０は、ガラスや石英、樹脂等の透明な基板１２の一
方の表面に、ＩＴＯ等の透明な電極材料による透明電極
１４が形成されている。この透明電極１４は、所定のピ
ッチでストライプ状に形成されている。また透明電極１
４の表面には、５００Å程度のホール輸送材料、及び５
００Å程度の電子輸送材料、その他発光材料によるＥＬ
材料からなる発光層１６が積層されている。そして発光
層１６の表面には、Ｌｉを０．０１〜０．０５％程度含
む純度９９％程度のＡｌ−Ｌｉ合金、その他Ａｌ−Ｍｇ
等の陰極材料による背面電極２８が、適宜の５００Å〜
１０００Å程度の厚みで積層されている。この背面電極
２８は、透明電極１４と直交して対向し、ストライプ状
に形成されている。これら基板１２上に積層された透明
電極１４から背面電極２８までが発光部を形成する。Embodiments of the present invention will be described below with reference to the drawings. In the organic EL element 10 of this embodiment, a transparent electrode 14 made of a transparent electrode material such as ITO is formed on one surface of a transparent substrate 12 made of glass, quartz, resin or the like. The transparent electrodes 14 are formed in stripes at a predetermined pitch. Transparent electrode 1
On the surface of 4, a hole transporting material of about 500 ° and 5
EL with electron transporting material of about 00Å and other luminescent materials
A light emitting layer 16 made of a material is laminated. On the surface of the light emitting layer 16, an Al-Li alloy containing about 0.01 to 0.05% of Li and having a purity of about 99%, and other Al-Mg
Back electrode 28 made of a cathode material such as
The layers are laminated at a thickness of about 1000 °. The back electrode 28 is orthogonally opposed to the transparent electrode 14 and is formed in a stripe shape. The area from the transparent electrode 14 laminated on the substrate 12 to the back electrode 28 forms a light emitting section.
【００１８】ここで発光層１６は、母胎材料のうちホー
ル輸送材料としては、トリフェニルアミン誘導体（ＴＰ
Ｄ）、ヒドラゾン誘導体、アリールアミン誘導体等があ
る。一方、電子輸送材料としては、アルミキレート錯体
（Ａｌｑ３）、ジスチリルビフェニル誘導体（ＤＰＶＢ
ｉ）、オキサジアゾール誘導体、ビスチリルアントラセ
ン誘導体、ベンゾオキサゾールチオフェン誘導体、ペリ
レン類、チアゾール類等を用いる。さらに適宜の発光材
料を混合してもよく、ホール輸送材料と電子輸送材料を
混合した発光層を形成してもよく、その場合、ホール輸
送材料と電子輸送材料の比は、１０：９０乃至９０：１
０の範囲で適宜変更可能である。Here, the light emitting layer 16 is formed of a triphenylamine derivative (TP
D), hydrazone derivatives, arylamine derivatives and the like. On the other hand, as electron transporting materials, aluminum chelate complex (Alq 3 ), distyrylbiphenyl derivative (DPVB
i), oxadiazole derivatives, bistyrylanthracene derivatives, benzoxazolethiophene derivatives, perylenes, thiazoles and the like are used. Further, an appropriate light emitting material may be mixed, or a light emitting layer in which a hole transport material and an electron transport material are mixed may be formed. In this case, the ratio of the hole transport material to the electron transport material is 10:90 to 90. : 1
It can be changed appropriately within the range of 0.
【００１９】さらに少なくとも発光部の全面を覆うよう
に、図示しない撥水膜や保護膜が形成されている。これ
らの材料はＥＬ材料と反応せず、硬化する際に変形や縮
小等の機械的ストレスを与えることがない材料であれば
よく、また発光部２０の耐熱性が高くないので、硬化等
に際して１００℃以下で付着可能な材料であることが望
ましい。従って樹脂材料は、常温硬化型あるいはＵＶ硬
化型の樹脂で、気密性が高い材料からなり、透光性、透
気性、含水性を有しないものがよい。Further, a water-repellent film and a protective film (not shown) are formed so as to cover at least the entire surface of the light emitting section. These materials do not have to react with the EL material and do not give a mechanical stress such as deformation or shrinkage upon curing. Further, since the heat resistance of the light emitting section 20 is not high, 100% It is desirable that the material be a material that can be attached at a temperature of not more than ° C. Therefore, the resin material is preferably a room-temperature-curable or UV-curable resin, which is made of a material having high airtightness and does not have translucency, air permeability, or water content.
【００２０】図１（ａ）〜図１（ｃ）は、この発明のＥ
Ｌ素子の一実施形態とその製造工程を示す。この実施形
態のＥＬ素子の製造方法は、ガラスや石英、樹脂等の透
明な基板１２の表面全面に、ＩＴＯ等の透明な電極材料
を蒸着等により設け、この表面にレジストを塗布し、所
定のピッチを有するストライプ状のパターンを重ねる。
次に露光、現像してストライプ状のパターンに対応した
形状にレジストを残す。そして透明な電極材料をエッチ
ング処理し、所望のストライプ状の透明電極１４を形成
する。FIGS. 1A to 1C show the E of the present invention.
1 shows an embodiment of an L element and a manufacturing process thereof. In the method for manufacturing an EL element according to this embodiment, a transparent electrode material such as ITO is provided on the entire surface of a transparent substrate 12 such as glass, quartz, resin, or the like by vapor deposition or the like, and a resist is applied to the surface. A stripe pattern having a pitch is overlapped.
Next, the resist is exposed and developed to leave a resist in a shape corresponding to the stripe pattern. Then, the transparent electrode material is etched to form a desired striped transparent electrode 14.
【００２１】次に透明電極１４の表面に、例えばＥＬ材
料としてＴＰＤ等のホール輸送材料からなるホール輸送
層、Ａｌｑ３等の電子輸送材料からなる電子輸送層やそ
の他発光材料からなる層を、真空蒸着やスパッタリン
グ、その他真空薄膜形成技術により積層し、発光層１６
を形成する。[0021] Then the surface of the transparent electrode 14, for example, a hole transport layer made of a hole transporting material TPD such as EL material, a layer formed of an electron transporting layer or other light-emitting material formed of an electron transporting material such as Alq 3, the vacuum The light emitting layer 16 is laminated by vapor deposition, sputtering, or other vacuum thin film forming techniques.
To form
【００２２】蒸着条件として、例えば、真空度が６×１
０−６Ｔｏｒｒで、ＥＬ材料の場合５０Å／ｓｅｃの蒸
着速度で成膜させる。また発光層１４等は、フラッシュ
蒸着により形成してもよい。フラッシュ蒸着法は、予め
所定の比率で混合したＥＬ材料を、３００℃〜６００℃
好ましくは４００℃〜５００℃に加熱した蒸着源に落下
させ、ＥＬ材料を一気に蒸発させるものである。またそ
のＥＬ材料を容器中に収容し、急速にその容器を加熱
し、一気に蒸着させるものでもよい。The deposition conditions include, for example, a degree of vacuum of 6 × 1
In 0 -6 Torr, thereby deposited at a deposition rate in the case 50 Å / sec of the EL material. The light emitting layer 14 and the like may be formed by flash evaporation. In the flash evaporation method, an EL material previously mixed at a predetermined ratio is heated to 300 ° C. to 600 ° C.
Preferably, the EL material is dropped onto a deposition source heated to 400 ° C. to 500 ° C. to evaporate the EL material at a stretch. Alternatively, the EL material may be housed in a container, and the container may be rapidly heated and vapor-deposited at once.
【００２３】次に背面電極２８の蒸着に際して、ステン
レス等の合金や金属、樹脂等の変形しにくい材料からな
る矩形の環状のフレーム１８の表面に、ストライプ状の
マスク２２を設ける。マスク２２は、ポリイミド系のア
ラミド繊維などの耐熱性のある樹脂線状材料である単繊
維を等間隔にフレーム１８の開口部に配置したものであ
る。この単繊維は、例えば直径が約７０μｍで、０．５
ｍｍ程度のピッチで等間隔にフレーム１８の開口部に配
置させた後、長手方向に約３％伸張し所定の張力を付与
したものである。フレーム１８との固定部は、単繊維を
接着剤２０を介して、予め所定の治具により等間隔で平
行に配置し、例えば約３％伸張した状態の単繊維をフレ
ーム１８に接着固定し、図２に示すようなマスクフレー
ム２４を形成する。単繊維によるマスク２２は、接着剤
２０の厚みにより高さ、及び位置がずれないように各単
繊維に対して平行にスキージを当て平面化する。Next, at the time of vapor deposition of the back electrode 28, a stripe-shaped mask 22 is provided on the surface of the rectangular ring-shaped frame 18 made of a material such as stainless steel or the like, a metal, a resin or the like which is difficult to deform. The mask 22 is formed by disposing single fibers, which are heat-resistant resin linear materials such as polyimide-based aramid fibers, at equal intervals in the opening of the frame 18. This single fiber has, for example, a diameter of about 70 μm and a diameter of about 0.5 μm.
After being arranged at equal intervals in the opening of the frame 18 at a pitch of about mm, it is stretched about 3% in the longitudinal direction and given a predetermined tension. The fixed portion to the frame 18 is arranged in advance by a predetermined jig via an adhesive 20 in parallel with a predetermined jig at an equal interval, and for example, a single fiber stretched by about 3% is fixed to the frame 18 by bonding. A mask frame 24 as shown in FIG. 2 is formed. The mask 22 made of single fibers is flattened by applying a squeegee in parallel to each single fiber so that the height and the position are not shifted by the thickness of the adhesive 20.
【００２４】フレーム１８は、外形が基板１２よりも大
きく、例えば、内側の開口部の空間の大きさは３００×
３００ｍｍ、フレーム１８の外形の大きさは３８０×３
８０ｍｍ程度の矩形状の枠で、マスク２２を形成する単
繊維を接着する表面は平坦な面である。The outer shape of the frame 18 is larger than that of the substrate 12, for example, the size of the space of the inner opening is 300 ×
300 mm, external dimensions of frame 18 are 380 × 3
The surface to which the single fibers forming the mask 22 are bonded is a flat surface with a rectangular frame of about 80 mm.
【００２５】また接着剤は、流動性に優れ、フレーム１
８に均一な厚さで塗布することができ、またマスク２２
の単繊維とフレーム１８を確実に接着固定するもので、
３０分程度で硬化することが望ましい。The adhesive has excellent fluidity, and the frame 1
8 can be applied in a uniform thickness and the mask 22
To securely bond and fix the monofilament and the frame 18.
It is desirable to cure in about 30 minutes.
【００２６】次に基板１２上に、単繊維によるマスク２
２を形成したマスクフレーム２４を重ね合わせ、図１
（ａ）に示すようにマスク２２の単繊維の長手方向とス
トライプ状の透明電極１４のストライプ方向が直交する
ように、発光層１６上にマスク２２を重ね合わせる。ま
たこのときマスクフレーム２４は、図３に示すように、
基板１２に対して蒸着源側に位置し、マスク２２が発光
層１６に押し当てられた状態とする。Next, a mask 2 made of a single fiber is placed on the substrate 12.
2 are superimposed on the mask frame 24 on which
As shown in (a), the mask 22 is superimposed on the light emitting layer 16 such that the longitudinal direction of the single fiber of the mask 22 and the stripe direction of the striped transparent electrode 14 are orthogonal to each other. At this time, as shown in FIG.
The mask 22 is located on the side of the deposition source with respect to the substrate 12 and is in a state where the mask 22 is pressed against the light emitting layer 16.
【００２７】次に、Ｌｉを０．０１〜０．０５％程度含
む純度９９％程度のＡｌ−Ｌｉ合金、その他Ａｌ−Ｍｇ
等の陰極材料からなる背面電極材料２６を、発光層１６
及びマスク２２の表面に真空蒸着等の真空薄膜形成技術
により図１（ｂ）に示すように設ける。このときマスク
２２間の発光層１６上には均一の厚さの背面電極材料２
６が形成される。Next, an Al--Li alloy containing about 0.01 to 0.05% of Li and having a purity of about 99%, other Al--Mg
The back electrode material 26 made of a cathode material such as
1B, and is provided on the surface of the mask 22 by a vacuum thin film forming technique such as vacuum deposition. At this time, the back electrode material 2 having a uniform thickness is formed on the light emitting layer 16 between the masks 22.
6 are formed.
【００２８】その後マスクフレーム２４を基板１２から
取り外し、図１（ｃ）に示すように、隣接する背面電極
２８が、マスク２２による領域によって互いに絶縁され
たストライプ状に形成される。After that, the mask frame 24 is removed from the substrate 12, and the adjacent back electrodes 28 are formed in a stripe shape insulated from each other by the region of the mask 22, as shown in FIG.
【００２９】マスクフレーム２４のマスク２２は、およ
そ２０回程度繰り返し使用することができ、それ以後は
マスク２２の単繊維と接着剤２０を除去し、上記と同様
の方法でフレーム１８に新しい単繊維を接着してマスク
２２を設ける。The mask 22 of the mask frame 24 can be used repeatedly about 20 times. Thereafter, the single fibers of the mask 22 and the adhesive 20 are removed, and a new single fiber is attached to the frame 18 in the same manner as described above. Are bonded to form a mask 22.
【００３０】この後、発光層１６と背面電極２８の全面
に、図示しないＳｉＯ等の絶縁性の保護膜等を、真空蒸
着やスパッタリング、その他真空薄膜形成技術により形
成してもよい。さらに、撥水膜や樹脂の保護膜等を設け
てもよい。Thereafter, an insulating protective film such as SiO (not shown) may be formed on the entire surface of the light emitting layer 16 and the back electrode 28 by vacuum deposition, sputtering, or other vacuum thin film forming techniques. Further, a water repellent film, a resin protective film, or the like may be provided.
【００３１】この実施形態のＥＬ素子の製造方法によれ
ば、樹脂系の単繊維のマスクフレーム２４を用いて背面
電極２８を形成することにより、製造工程が少なく簡単
なものとなった。またマスクフレーム２４のマスク２２
に耐熱性の単繊維を用いることにより、巻癖がないこと
から、通常の接着剤２０でフレーム１８に固定すること
が可能である。さらに背面電極材料２６の蒸着時に生じ
るマスク２２の熱膨張によるたわみは、予め伸びたスト
レスを加えているため吸収され、発光層１６への密着性
や平行性が失われることもない。According to the method of manufacturing an EL device of this embodiment, the back electrode 28 is formed using the resin-based single fiber mask frame 24, thereby simplifying the manufacturing process. Also, the mask 22 of the mask frame 24
By using a heat-resistant single fiber, there is no curl, so that it can be fixed to the frame 18 with a normal adhesive 20. Furthermore, the deflection due to the thermal expansion of the mask 22 generated during the deposition of the back electrode material 26 is absorbed by the application of the pre-stretched stress, and the adhesion to the light emitting layer 16 and the parallelism are not lost.
【００３２】なおこの発明のＥＬ素子の製造方法は、上
記実施形態に限定されるものではなく、マスクの本数や
間隔、大きさは透明電極等に対応させて適宜設定するこ
とができる。またフレームの形状は基板よりも大きな内
部空間を有し、マスクにより歪みが生じないものであれ
ばよく、また接着剤以外の材料を用いてフレームに固定
してもよい。また背面電極は、Ａｌ、Ｌｉ、Ａｇ、Ｍ
ｇ、Ｉｎ等の金属またはこれらの合金を用いるよい。The method of manufacturing an EL device according to the present invention is not limited to the above embodiment, and the number, interval, and size of masks can be appropriately set in accordance with a transparent electrode or the like. Further, the shape of the frame may be any shape as long as it has an internal space larger than that of the substrate and does not cause distortion by the mask, or may be fixed to the frame using a material other than the adhesive. The back electrode is made of Al, Li, Ag, M
A metal such as g or In or an alloy thereof may be used.
【００３３】[0033]
【発明の効果】この発明のＥＬ素子の製造方法によれ
ば、フレームのマスクに単繊維形状の樹脂系材料を用い
ているので、製造途中でたるみよじれが発生せず、しか
もフレームに変形を生じさせるような張力を必要とせ
ず、等間隔で互いに平行なストライプ状のマスクを形成
することができ、良好な背面電極を形成することができ
る。According to the method of manufacturing an EL element of the present invention, since a single fiber resin material is used for the mask of the frame, no sagging or kinking occurs during the manufacturing and the frame is deformed. It is possible to form striped masks that are parallel to each other at equal intervals without the need for a tension that causes the back electrode to be formed.
【図面の簡単な説明】[Brief description of the drawings]
【図１】この発明の一実施形態のＥＬ素子の製造工程
（ａ）〜（ｃ）を示す断面図である。FIG. 1 is a sectional view showing manufacturing steps (a) to (c) of an EL element according to an embodiment of the present invention.
【図２】この発明の一実施形態のマスクフレームを示す
平面図である。FIG. 2 is a plan view showing a mask frame according to one embodiment of the present invention.
【図３】この発明の一実施形態の基板上の発光層にマス
クフレームを取り付けた状態を示す断面図である。FIG. 3 is a cross-sectional view showing a state where a mask frame is attached to a light emitting layer on a substrate according to an embodiment of the present invention.
【図４】従来のＥＬ素子の製造工程（ａ）〜（ｄ）を示
す断面図である。4A to 4D are cross-sectional views showing manufacturing steps (a) to (d) of a conventional EL element.
【符号の説明】 １２ 基板 １４ 透明電極 １６ 発光層 １８ フレーム ２０ 接着剤 ２２ マスク ２４ マスクフレーム ２６ 背面電極材料 ２８ 背面電極DESCRIPTION OF SYMBOLS 12 Substrate 14 Transparent electrode 16 Light emitting layer 18 Frame 20 Adhesive 22 Mask 24 Mask frame 26 Back electrode material 28 Back electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山本 肇 富山県上新川郡大沢野町下大久保3158番地 北陸電気工業株式会社内 (72)発明者 若林 守光 富山県上新川郡大沢野町下大久保3158番地 北陸電気工業株式会社内 Ｆターム(参考） 3K007 AB00 AB18 BA06 BB00 CA01 CA02 CA05 CB01 DA00 DB03 EB00 FA00 FA01 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Hajime Yamamoto 3158, Shimo-Okubo, Osawano-cho, Kamishinkawa-gun, Toyama Prefecture Inside Hokuriku Electric Industry Co., Ltd. F term in Industrial Co., Ltd. (reference) 3K007 AB00 AB18 BA06 BB00 CA01 CA02 CA05 CB01 DA00 DB03 EB00 FA00 FA01
Claims (3)
所定のピッチでストライプ状となるように透明電極を形
成し、この透明電極にＥＬ材料からなる発光層を真空薄
膜形成技術により積層し、上記発光層の表面に、上記透
明電極に対向し、直交する方向にストライプ状に所定の
ピッチに背面電極を形成するＥＬ素子の製造方法におい
て、予め所定の伸びのストレスが加えられた状態の単繊
維形状の樹脂線状材料を、所定の開口部を有したフレー
ムのその開口部に等間隔で平行に配列し固定してマスク
フレームを形成し、上記背面電極を形成する際に、上記
マスクフレームの上記樹脂線状材料を上記基板面に対面
させ、上記樹脂線状材料を介して上記基板面に真空薄膜
形成技術により背面電極材料を付着させ、上記マスクフ
レームの上記樹脂線状材料を取り除いてストライプ状の
上記背面電極を形成するＥＬ素子の製造方法。1. A transparent electrode is formed on a transparent substrate surface with a transparent electrode material so as to form a stripe at a predetermined pitch, and a light emitting layer made of an EL material is laminated on the transparent electrode by a vacuum thin film forming technique. In a method for manufacturing an EL element, in which a back electrode is formed on a surface of the light emitting layer at a predetermined pitch in a stripe shape in a direction orthogonal to the transparent electrode and in a direction orthogonal to the transparent electrode, a single layer in a state where a predetermined elongation stress is applied in advance. When forming a mask frame by arranging and fixing a fibrous resin linear material at predetermined intervals in parallel with the opening of a frame having a predetermined opening to form the mask frame, when forming the back electrode, the mask frame The resin linear material is made to face the substrate surface, and a back electrode material is adhered to the substrate surface via the resin linear material by a vacuum thin film forming technique. A method for manufacturing an EL element, wherein a strip-shaped back electrode is formed by removing a strip-shaped material.
成面全面に上記発光層を形成した後、この発光層に対面
させて配置し、上記透明電極と上記線状材料が略直交す
るように位置させ、真空薄膜形成技術により背面電極材
料を設ける請求項１記載のＥＬ素子の製造方法。2. The mask frame, wherein the light emitting layer is formed on the entire surface of the transparent electrode, and the mask frame is disposed so as to face the light emitting layer, and the mask frame is positioned so that the transparent electrode and the linear material are substantially orthogonal to each other. 2. The method according to claim 1, wherein the back electrode material is provided by a vacuum thin film forming technique.
であり、接着剤で上記フレームに固定する請求項１また
は２記載のＥＬ素子の製造方法。3. The method for manufacturing an EL element according to claim 1, wherein the linear material is a single fiber of an imide resin, and is fixed to the frame with an adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10240288A JP2000068054A (en) | 1998-08-26 | 1998-08-26 | Manufacture of el element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10240288A JP2000068054A (en) | 1998-08-26 | 1998-08-26 | Manufacture of el element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000068054A true JP2000068054A (en) | 2000-03-03 |
Family
ID=17057260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10240288A Pending JP2000068054A (en) | 1998-08-26 | 1998-08-26 | Manufacture of el element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000068054A (en) |
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