JP2000053744A - Resin composition, adhesive, adhesive film, lead frame using the same and semiconductor device - Google Patents

Resin composition, adhesive, adhesive film, lead frame using the same and semiconductor device

Info

Publication number
JP2000053744A
JP2000053744A JP10224439A JP22443998A JP2000053744A JP 2000053744 A JP2000053744 A JP 2000053744A JP 10224439 A JP10224439 A JP 10224439A JP 22443998 A JP22443998 A JP 22443998A JP 2000053744 A JP2000053744 A JP 2000053744A
Authority
JP
Japan
Prior art keywords
adhesive
film
weight
dianhydride
tetracarboxylic dianhydride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10224439A
Other languages
Japanese (ja)
Other versions
JP3314158B2 (en
Inventor
Yuji Hasegawa
雄二 長谷川
Sudarsanam Krishnamachari
スダルサナム クリシュナマチャリ
Noriyuki Saito
則之 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP22443998A priority Critical patent/JP3314158B2/en
Publication of JP2000053744A publication Critical patent/JP2000053744A/en
Application granted granted Critical
Publication of JP3314158B2 publication Critical patent/JP3314158B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73215Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Compositions Of Macromolecular Compounds (AREA)
  • Adhesive Tapes (AREA)
  • Polyurethanes Or Polyureas (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Die Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain a resin composition capable of using for contact members of a semiconductor device, having heat resistance useful for fixing inner lead wire by including a copolymer obtained by reacting a tetracarboxylic acid dianhydride and diamine or the like and a specific polyether. SOLUTION: This resin composition is obtained by including the copolymer obtained by reacting (A) the tetracarboxylic acid dianhydride, (B) the diamine (e.g.; 1,2-diaminopropane or the like) or diisocyanate and (C) the polyether of formula R-Q1-O-(Q2-O-)p-Q3-R (Q1 to Q3 are each an 1-10C alkylene; R is OH or COOH; p is 0 to 100). The preferable amount of the component C in weight is 30 to 70% to the sum of component A, B and C. The component A including at least 50% of bisphenol A bistrimellitate dianhydride based on the gross of the component A is preferred.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体装置の接着
部材に用いられて耐熱性があり、特にインナーリードの
固定に好適な樹脂組成物、接着剤、接着フィルム、これ
を用いたリードフレーム及び半導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition, an adhesive, an adhesive film which is used for an adhesive member of a semiconductor device and has heat resistance and is particularly suitable for fixing inner leads, a lead frame using the same, The present invention relates to a semiconductor device.

【0002】[0002]

【従来の技術】半導体装置内で用いられる接着テープに
は、リード固定テープ、LOCテープ、ダイボンドテー
プ等があり、例えば、リード固定テープは、リードフレ
ームのリードピンを固定し、リードフレーム自体又は半
導体装置全体の生産性、信頼性を向上させるために使用
される。半導体装置、特にQFP(Quad Flat
Package)では、インナーリードを押さえるリ
ード固定テープは、従来、耐熱性ベースフィルム上に熱
硬化性樹脂接着剤を塗付した接着テープが用いられてき
た。
2. Description of the Related Art Adhesive tapes used in semiconductor devices include lead fixing tapes, LOC tapes, die bond tapes, and the like. For example, the lead fixing tape fixes lead pins of a lead frame, and the lead frame itself or the semiconductor device. Used to improve overall productivity and reliability. Semiconductor devices, especially QFP (Quad Flat)
Conventionally, an adhesive tape in which a thermosetting resin adhesive is applied on a heat-resistant base film has been used as a lead fixing tape for holding down inner leads.

【0003】[0003]

【発明が解決しようとする課題】しかし、従来のリード
固定テープは上記したように接着剤層に熱硬化性樹脂を
用いているので耐熱性が十分でなく、ワイヤボンド時に
熱によって多量のアウトガスが発生し、その際キャピラ
リーを詰まらせる問題やリード汚染によるワイヤボンド
不良等の問題があった。本発明は、このような問題を解
決し、高温におけるワイヤボンド性を向上させる接着部
材、特にリード固定テープに好適な耐熱性接着剤、フィ
ルム状接着剤、それを用いたリードフレーム及び半導体
装置を提供するものである。
However, since the conventional lead fixing tape uses a thermosetting resin for the adhesive layer as described above, the heat resistance is not sufficient, and a large amount of outgas is generated by heat during wire bonding. At that time, there were problems such as clogging the capillary and wire bond failure due to lead contamination. The present invention solves such a problem and provides an adhesive member that improves wire bondability at high temperatures, particularly a heat-resistant adhesive suitable for a lead fixing tape, a film adhesive, a lead frame and a semiconductor device using the same. To provide.

【0004】[0004]

【課題を解決するための手段】本発明者らは、種々の樹
脂とその組成、耐熱性及び接着性の関係について鋭意検
討した結果、特定の耐熱性樹脂を用いることでワイヤボ
ンド性の良好なリード固定テープが得られることを見出
し、本発明を完成した。すなわち、本発明は、下記の樹
脂組成物、接着剤、接着フィルム、これを用いたリード
フレーム及び半導体装置である。 (1)(a)テトラカルボン酸二無水物と (b)ジアミン又はジイソシアネートと (c)式(1)で示されるポリエーテル化合物を反応さ
せて得られる共重合体を含む樹脂組成物。 RーQ1ーOー[Q2ーOー]pーQ3ーR (1) (Q1、Q2及びQ3は炭素数1〜10のアルキレン、
RはOH又はCOOH、pは0〜100の整数。) (2)(c)の重量が、(a)+(b)+(c)の合計
重量に対して30〜70%である、上記(1)の樹脂組
成物。 (3)テトラカルボン酸二無水物(a)は、ビスフェノ
ールAビストリメリテート二無水物、2,2ービス[4
ー(3,4ージカルボキシ)フェニル]プロバン二無水
物及びベンゾフェノンテトラカルボン酸二無水物から選
ばれるテトラカルボン酸二無水物を、テトラカルボン酸
二無水物の総量に対して50モル%以上含むものであ
る、上記(1)又は(2)のいずれかの樹脂組成物。
Means for Solving the Problems The inventors of the present invention have conducted intensive studies on the relationship between various resins and their compositions, heat resistance and adhesiveness. The present inventors have found that a lead fixing tape can be obtained, and have completed the present invention. That is, the present invention is the following resin composition, adhesive, adhesive film, lead frame and semiconductor device using the same. (1) A resin composition containing a copolymer obtained by reacting (a) tetracarboxylic dianhydride, (b) diamine or diisocyanate, and (c) a polyether compound represented by the formula (1). R-Q1-O- [Q2-O-] p-Q3-R (1) (Q1, Q2 and Q3 are alkylene having 1 to 10 carbon atoms;
R is OH or COOH, and p is an integer of 0-100. (2) The resin composition according to the above (1), wherein the weight of (c) is 30 to 70% based on the total weight of (a) + (b) + (c). (3) Tetracarboxylic dianhydride (a) is bisphenol A bistrimellitate dianhydride, 2,2-bis [4
-(3,4-dicarboxy) phenyl] propane dianhydride and benzophenone tetracarboxylic dianhydride selected from the group consisting of at least 50 mol% of the total amount of tetracarboxylic dianhydrides. The resin composition according to any one of the above (1) and (2).

【0005】(4)(a)テトラカルボン酸二無水物と (b)ジアミン又はジイソシアネートと (c)式(1)で示されるポリエーテル化合物を反応さ
せて得られる共重合体を含む接着剤。 (5)(c)の重量が、(a)+(b)+(c)の合計
重量に対して30〜70%である、上記(4)の接着
剤。 (6)テトラカルボン酸二無水物(a)は、ビスフェノ
ールAビストリメリテート二無水物、2,2ービス[4
ー(3,4ージカルボキシ)フェニル]プロバン二無水
物及びベンゾフェノンテトラカルボン酸二無水物から選
ばれるテトラカルボン酸二無水物を、テトラカルボン酸
二無水物の総量に対して50モル%以上含むものであ
る、上記(4)又は(5)のいずれかの接着剤。 (7)上記(4)〜(6)のいずれかの接着剤の層を含
んでなるものであるフィルム状の接着剤。
(4) An adhesive containing a copolymer obtained by reacting (a) tetracarboxylic dianhydride, (b) diamine or diisocyanate, and (c) a polyether compound represented by the formula (1). (5) The adhesive according to (4), wherein the weight of (c) is 30 to 70% based on the total weight of (a) + (b) + (c). (6) Tetracarboxylic dianhydride (a) is bisphenol A bistrimellitate dianhydride, 2,2-bis [4
-(3,4-dicarboxy) phenyl] propane dianhydride and benzophenone tetracarboxylic dianhydride selected from the group consisting of at least 50 mol% of the total amount of tetracarboxylic dianhydrides. The adhesive according to any one of the above (4) and (5). (7) A film-like adhesive comprising the adhesive layer of any of the above (4) to (6).

【0006】(8)270℃で10分間加熱したとき
に、接着剤の層の重量減少が加熱前の接着剤の層の重量
に対して1%(重量比)以下である、上記(7)のフィ
ルム状の接着剤。 (9)耐熱性フィルムの少なくとも片面に、上記(4)
〜(6)のいずれかの接着剤の層が形成されている接着
フィルム。
(8) When heated at 270 ° C. for 10 minutes, the weight loss of the adhesive layer is 1% or less (weight ratio) with respect to the weight of the adhesive layer before heating. Film adhesive. (9) At least one side of the heat-resistant film has the above (4)
An adhesive film on which an adhesive layer according to any one of (1) to (6) is formed.

【0007】(10)270℃で10分間加熱したとき
に、接着剤の層の重量減少が加熱前の接着剤の層の重量
に対して1%(重量比)以下である、上記(9)の接着
フィルム。
(10) When heated at 270 ° C. for 10 minutes, the weight loss of the adhesive layer is not more than 1% (weight ratio) with respect to the weight of the adhesive layer before heating (9). Adhesive film.

【0008】(11)上記(7)もしくは(8)の接着
剤又は上記(9)もしくは(10)の接着フィルムが貼
り付けられているリードフレーム。 (12)上記リードフレームを備え、少なくとも接着部
材部分は封止材で封止されている半導体装置。
(11) A lead frame to which the adhesive of (7) or (8) or the adhesive film of (9) or (10) is attached. (12) A semiconductor device including the lead frame, wherein at least an adhesive member is sealed with a sealing material.

【0009】[0009]

【発明の実施の形態】本発明における、 (a)テトラカルボン酸二無水物と (b)ジアミン又はジイソシアネートと (c)式(1)で示されるポリエーテル化合物を反応さ
せて得られる共重合体は、上記(a)と(b)と(c)
及び触媒等のその他の成分を適宜加え、ポリエーテルイ
ミド共重合体が生成する条件で、反応させて得られる。
得られた反応物をそのまま使用することもできるが、ア
ルコール、水等の貧溶媒と混合して得られた沈殿物を乾
燥させた共重合体を用いる方が好ましい。
BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, a copolymer obtained by reacting (a) tetracarboxylic dianhydride, (b) diamine or diisocyanate, and (c) a polyether compound represented by the formula (1) Are the above (a), (b) and (c)
And other components such as a catalyst are appropriately added, and the mixture is reacted under the conditions for forming a polyetherimide copolymer.
Although the obtained reaction product can be used as it is, it is preferable to use a copolymer obtained by mixing a poor solvent such as alcohol and water and drying a precipitate obtained.

【0010】本発明において用いることができるテトラ
カルボン酸二無水物(a)としては、ピロメリット酸二
無水物、3,3’,4,4’−ベンゾフェノンテトラカ
ルボン酸二無水物(BTDA)、3,3’,4,4’−
ビフェニルテトラカルボン酸二無水物、2,2−ビスフ
タル酸ヘキサフルオロイソプロピリデン二無水物、ビス
(3,4−ジカルボキシフェニル)エーテル二無水物、
ビス(3,4−ジカルボキシフェニル)スルホン二無水
物、4,4’−ビス(3,4−ジカルボキシフェノキ
シ)ジフェニルスルホン二無水物、2,2−ビス[4−
(3,4−ジカルボキシフェノキシ)フェニル]プロパ
ン無水物、
The tetracarboxylic dianhydride (a) that can be used in the present invention includes pyromellitic dianhydride, 3,3 ′, 4,4′-benzophenonetetracarboxylic dianhydride (BTDA), 3,3 ', 4,4'-
Biphenyltetracarboxylic dianhydride, 2,2-bisphthalic acid hexafluoroisopropylidene dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride,
Bis (3,4-dicarboxyphenyl) sulfone dianhydride, 4,4′-bis (3,4-dicarboxyphenoxy) diphenylsulfone dianhydride, 2,2-bis [4-
(3,4-dicarboxyphenoxy) phenyl] propane anhydride,

【0011】エチレングリコールビストリメリテート二
無水物、デカメチレングリコールビストリメリテート二
無水物、ビスフェノールAビストリメリテート二無水物
(BABT)、2,2ービス[4ー(3,4ージカルボ
キシ)フェニル]プロバン二無水物(BPADA)、
2,2−ビス[4−(3,4−ジカルボキシフェニルベ
ンゾイルオキシ)フェニル]ヘキサフルオロプロパン二
無水物、4,4’−[1,4−フェニレンビス(1−メ
チルエチリデン)]ビスフェニルビストリメリテート二
無水物、等が使用でき、2種以上を併用してもよい。こ
れらのテトラカルボン酸二無水物は、遊離酸(テトラカ
ルボン酸)、ジエステル、ジクロライド等の誘導体を使
用することもできる。
[0011] Ethylene glycol bis trimellitate dianhydride, decamethylene glycol bis trimellitate dianhydride, bisphenol A bis trimellitate dianhydride (BABT), 2,2-bis [4- (3,4-dicarboxy) phenyl] propane Dianhydride (BPADA),
2,2-bis [4- (3,4-dicarboxyphenylbenzoyloxy) phenyl] hexafluoropropane dianhydride, 4,4 ′-[1,4-phenylenebis (1-methylethylidene)] bisphenylbistri Melitate dianhydride and the like can be used, and two or more kinds may be used in combination. As these tetracarboxylic dianhydrides, derivatives such as free acids (tetracarboxylic acids), diesters and dichlorides can also be used.

【0012】なお、これらの中でも、ビスフェノールA
ビストリメリテート二無水物(BABT)、2,2ービ
ス[4ー(3,4ージカルボキシ)フェニル]プロバン
二無水物(BPADA)又は3,3’,4,4’−ベン
ゾフェノンテトラカルボン酸二無水物、が好ましく、そ
れらの量は、テトラカルボン酸二無水物の総量に対し
て、BABT、BPADA及びBTDAから選ばれるテ
トラカルボン酸二無水物を、テトラカルボン酸二無水物
の総量に対して50モル%以上含むものが好ましい。
Among these, bisphenol A
Bistrimellitate dianhydride (BABT), 2,2-bis [4- (3,4-dicarboxy) phenyl] propane dianhydride (BPADA) or 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride And the amount thereof is preferably such that a tetracarboxylic dianhydride selected from BABT, BPADA and BTDA is 50 moles based on the total amount of the tetracarboxylic dianhydride based on the total amount of the tetracarboxylic dianhydride. % Is preferable.

【0013】また、接着剤の接着力、耐熱性等の特性を
損なわない範囲で、テトラカルボン酸二無水物のほか
に、無水トリメリット酸等のトリカルボン酸無水物を併
用してもよい。
Further, a tricarboxylic anhydride such as trimellitic anhydride may be used in addition to the tetracarboxylic dianhydride as long as the properties such as adhesive strength and heat resistance of the adhesive are not impaired.

【0014】用いることができるジアミンとしては、
1,2−ジアミノプロパン、1,3−ジアミノプロパ
ン、1,2−ジアミノ−2−メチルプロパン、1,4−
ジアミノブタン、1,6−ジアミノヘキサン、1,7−
ジアミノヘプタン、1,8−ジアミノオクタン、1,9
−ジアミノノナン、1,10−ジアミノデカン、1,1
2−ジアミノドデカン、等のアルキレンジアミン、
As the diamine which can be used,
1,2-diaminopropane, 1,3-diaminopropane, 1,2-diamino-2-methylpropane, 1,4-
Diaminobutane, 1,6-diaminohexane, 1,7-
Diaminoheptane, 1,8-diaminooctane, 1,9
-Diaminononane, 1,10-diaminodecane, 1,1
Alkylenediamines such as 2-diaminododecane,

【0015】イソホロンジアミン、フェニレンジアミ
ン、トルイレンジアミン、キシリレンジアミン、ナフタ
レンジアミン、ジシクロヘキシルメタンジアミン、4,
4’−ジアミノジフェニルメタン、4,4’−ジアミノ
ジフェニルエーテル、4,4’−ジアミノジフェニルス
ルホン、4,4’−ジアミノベンズアニリド、3,3’
−ジアミノジフェニルスルホン、3,3’−ジアミノベ
ンゾフェノン、3,3’−ジメチルジフェニル−4,
4’−ジアミン、3,3’,5,5’−テトラメチル−
4,4’−ジアミノジフェニルメタン、3,3’,5,
5’−テトライソプロピル−4,4’−ジアミノジフェ
ニルメタン、1,4−ビス(4−アミノクミル)ベンゼ
ン、1,3−ビス(4−アミノクミル)ベンゼン、1,
4−ビス(4−アミノフェノキシ)ベンゼン、1,4ー
ビス(3−アミノフェノキシ)ベンゼン、1,3−ビス
(3−アミノフェノキシ)ベンゼン、2,2−ビス[4
−(4−アミノフェノキシ)フェニル]プロパン、2,
2−ビス[4−(3−アミノフェノキシ)フェニル]プ
ロパン、ビス[4−(4−アミノフェノキシ)フェニ
ル]スルホン、ビス[4−(3−アミノフェノキシ)フ
ェニル]スルホン、ビス[4−(4−アミノフェノキ
シ)フェニル]エーテル、2,2−ビス[4−(4−ア
ミノフェノキシ)フェニル]ビフェニル、
Isophoronediamine, phenylenediamine, tolylenediamine, xylylenediamine, naphthalenediamine, dicyclohexylmethanediamine, 4,
4'-diaminodiphenylmethane, 4,4'-diaminodiphenylether, 4,4'-diaminodiphenylsulfone, 4,4'-diaminobenzanilide, 3,3 '
-Diaminodiphenylsulfone, 3,3'-diaminobenzophenone, 3,3'-dimethyldiphenyl-4,
4'-diamine, 3,3 ', 5,5'-tetramethyl-
4,4'-diaminodiphenylmethane, 3,3 ', 5
5′-tetraisopropyl-4,4′-diaminodiphenylmethane, 1,4-bis (4-aminocumyl) benzene, 1,3-bis (4-aminocumyl) benzene, 1,
4-bis (4-aminophenoxy) benzene, 1,4-bis (3-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, 2,2-bis [4
-(4-aminophenoxy) phenyl] propane, 2,
2-bis [4- (3-aminophenoxy) phenyl] propane, bis [4- (4-aminophenoxy) phenyl] sulfone, bis [4- (3-aminophenoxy) phenyl] sulfone, bis [4- (4 -Aminophenoxy) phenyl] ether, 2,2-bis [4- (4-aminophenoxy) phenyl] biphenyl,

【0016】次式で表されるシロキサンジアミン、A siloxane diamine represented by the following formula:

【化1】 〔式中、R1及びR2は2価の有機基、R3及びR4は1価
の有機基を示し、mは1〜100の整数を示す。〕等が
あり、これらは2種類以上併用してもよい。
Embedded image [In the formula, R 1 and R 2 represent a divalent organic group, R 3 and R 4 represent a monovalent organic group, and m represents an integer of 1 to 100. And these may be used in combination of two or more.

【0017】また、用いることができるジイソシアネー
トとしては、上に示したジアミンにおいて、「アミノ」
を「イソシアネート」と読み替えたものを挙げることが
できる。
The diisocyanates which can be used include the above-mentioned diamines such as "amino"
Can be replaced with "isocyanate".

【0018】また、本発明で用いることができるポリエ
ーテル化合物としては、式(1) RーQ1ーOー[Q2ーOー]pーQ3ーR (1) (Q1、Q2及びQ3は炭素数1〜10のアルキレンで
あり、そのようなアルキレンとしては、メチレン、エチ
レン、トリメチレン、テトラメチレン、ペンタメチレ
ン、ヘキサメチレン、ヘプタメチレン、オクタメチレ
ン、ノナメチレン、デカメチレン、メチレン、プロピレ
ン、ブチレン、ヘキシレン等があり、RはOH又はCO
OHであり、pは0〜100の整数である。)で表され
る両末端がヒドロキシ基を有するポリエーテル又は両末
端がカルボン酸を有するポリエーテルである。
The polyether compound which can be used in the present invention includes a compound represented by the following formula (1): RQ1-O- [Q2-O-] p-Q3-R (1) (where Q1, Q2 and Q3 are carbon atoms) Alkylene having the formulas 1 to 10, such alkylenes include methylene, ethylene, trimethylene, tetramethylene, pentamethylene, hexamethylene, heptamethylene, octamethylene, nonamethylene, decamethylene, methylene, propylene, butylene, hexylene and the like. And R is OH or CO
OH, and p is an integer of 0 to 100. ) Is a polyether having a hydroxy group at both ends or a polyether having a carboxylic acid at both ends.

【0019】両末端がヒドロキシ基を有するポリエーテ
ルとしては、 HOー[(CH24ーO]nーH Mw=250 HOー[(CH24ーO]nーH Mw=650 HOー[(CH24ーO]nーH Mw=1000 HOー[(CH24ーO]nーH Mw=1800 HOー[(CH24ーO]nーH Mw=2900 HOー[(CH24ーO]nーH Mw=4500 等が挙げられる。これらのポリエーテルを単独で用いて
も良いし、2種以上混合して用いても良い。
As the polyether having a hydroxy group at both terminals, HO-[(CH 2 ) 4 -O] n-H Mw = 250 HO-[(CH 2 ) 4 -O] n-H Mw = 650 HO chromatography [(CH 2) 4 over O] n over H Mw = 1000 HO chromatography [(CH 2) 4 over O] n over H Mw = 1800 HO chromatography [(CH 2) 4 over O] n over H Mw = 2900 HO-[(CH 2 ) 4 -O] n-H Mw = 4500. These polyethers may be used alone or in combination of two or more.

【0020】両末端がカルボン酸を有するポリエーテル
としては、 HOOCー(CH22ーOー[(CH24ーO]nー
(CH)2ーCOOH Mw=350 HOOCー(CH22ーOー[(CH24ーO]nー
(CH)2ーCOOH Mw=1100 HOOCー(CH22ーOー[(CH24ーO]nー
(CH)2ーCOOH Mw=2100 等が挙げられる。これらのポリエーテルを単独で用いて
も良いし、2種以上混合して用いても良い。
As the polyether having a carboxylic acid at both terminals, HOOC— (CH 2 ) 2 —O — [(CH 2 ) 4 —O] n— (CH) 2 —COOH Mw = 350 HOOC— (CH 2) ) 2-O over [(CH 2) 4 over O] n over (CH) 2-COOH Mw = 1100 HOOC chromatography (CH 2) 2 over O over [(CH 2) 4 over O] n over (CH) 2 —COOH Mw = 2100. These polyethers may be used alone or in combination of two or more.

【0021】(a)テトラカルボン酸二無水物;と
(b)ジアミン又はジイソシアネート;と(c)ポリエ
ーテル化合物;との含有物を反応させて得られる反応物
(ポリエーテルイミド共重合体)を調製する際、原料の
ポリエーテル(c)の使用量(重量)は、樹脂原料の総
重量、すなわち、上記(a)+(b)+(c)の合計重
量に対して30〜70%が好ましい。この場合に、接着
力及び耐熱性の良好なものが得られるからである。上記
(a)と(b)と(c)、及びその他の成分(触媒等)
を適宜加えて、反応物(ポリエーテルイミド共重合体)
を生成させるには、これらを有機溶媒中で混合する。こ
の際、テトラカルボン酸二無水物(a)とジアミン又は
ジイソシアネート(b)の使用量はポリエーテル(c)
の官能基の量を考慮して、調整する。
The reaction product (polyetherimide copolymer) obtained by reacting the contents of (a) tetracarboxylic dianhydride; (b) a diamine or diisocyanate; and (c) a polyether compound; In the preparation, the used amount (weight) of the polyether (c) as a raw material is 30 to 70% based on the total weight of the resin raw material, that is, the total weight of the above (a) + (b) + (c). preferable. In this case, a material having good adhesive strength and heat resistance can be obtained. (A), (b), and (c) above, and other components (such as catalysts)
Reactant (polyetherimide copolymer)
Are mixed in an organic solvent. At this time, the amounts of the tetracarboxylic dianhydride (a) and the diamine or diisocyanate (b) used are the same as those of the polyether (c).
Is adjusted in consideration of the amount of the functional group.

【0022】本発明において、ポリエーテルとして両末
端がカルボキシル基を有するポリエーテルを用いる場合
には、テトラカルボン酸二無水物及び両末端がカルボキ
シル基を有するポリエーテル(酸成分)と、ジアミンも
しくはジイソシアネート(アミン成分)とは、等モルの
使用を基本とする。許容されるいずれか一方の過剰量
は、好ましくは50モル%以内、更に好ましくは20モ
ル%以内である。
In the present invention, when a polyether having carboxyl groups at both ends is used as the polyether, tetracarboxylic dianhydride and a polyether having both carboxyl groups at both ends (acid component), diamine or diisocyanate are used. (Amine component) is based on the use of equimolar amounts. The acceptable excess of any one is preferably within 50 mol%, more preferably within 20 mol%.

【0023】反応(ポリエーテルイミド共重合体生成反
応)に用いられる有機溶媒は、N−メチル−ピロリド
ン、N,N−ジメチルアセトアミド、N,N−ジメチル
ホルムアミド、スルホラン等の非プロトン性極性溶媒、
テトラヒドロフラン、ジオキサン、モノグライム、ジグ
ライム等のエーテル系有機溶媒等が挙げられる。また、
原料モノマーや反応物(ポリエーテルイミド共重合体)
の溶解のため、ベンゼン、トルエン、キシレン、メチル
エチルケトン、メチルセロソルブ、セロソルブアセテー
ト等の有機溶媒を適量用いることもできる。
The organic solvent used in the reaction (polyetherimide copolymer formation reaction) includes aprotic polar solvents such as N-methyl-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, sulfolane, and the like.
Examples thereof include ether-based organic solvents such as tetrahydrofuran, dioxane, monoglyme, and diglyme. Also,
Raw material monomers and reactants (polyetherimide copolymer)
For dissolution of an organic solvent, an appropriate amount of an organic solvent such as benzene, toluene, xylene, methyl ethyl ketone, methyl cellosolve, and cellosolve acetate can be used.

【0024】得られた反応物(ポリエーテルイミド共重
合体)に有機溶剤を加えてワニス等の液状の樹脂組成物
とする場合に用いられる有機溶媒としては、N−メチル
−ピロリドン、N,N−ジメチルアセトアミド、N,N
−ジメチルホルムアミド等の非プロトン性極性溶媒、テ
トラヒドロフラン、ジオキサン、モノグライム、ジグラ
イム等のエーテル系有機溶媒、ベンゼン、トルエン、キ
シレン、メチルエチルケトン、シクロヘキサノン、メチ
ルセロソルブ、セロソルブアセテート、あるいはこれら
の混合溶媒等がある。
When an organic solvent is added to the obtained reaction product (polyetherimide copolymer) to form a liquid resin composition such as varnish, N-methyl-pyrrolidone, N, N -Dimethylacetamide, N, N
-Aprotic polar solvents such as dimethylformamide; ether-based organic solvents such as tetrahydrofuran, dioxane, monoglyme and diglyme; benzene, toluene, xylene, methyl ethyl ketone, cyclohexanone, methyl cellosolve, cellosolve acetate, and mixed solvents thereof.

【0025】液状の樹脂組成物(ワニス)は、半導体素
子やリードフレーム等の被着体にこれを直接塗布して接
着部材として用いられてもよいし、これを予めフィルム
状(又はシート状)のものとし、これを被着体に適用し
た後熱圧着して用いても良い。
The liquid resin composition (varnish) may be directly applied to an adherend such as a semiconductor element or a lead frame to be used as an adhesive member, or may be used in advance as a film (or sheet). It may be applied to an adherend and then thermocompression-bonded.

【0026】フィルム状(又はシート状)の接着剤の製
造は、本発明の樹脂組成物を前記した有機溶媒で適当に
希釈したのち、ガラス板、ステンレス板等の平板上、あ
るいはポリエステル等のフィルム上に一定の厚さで流延
・塗布したのち、通常、初めは約80〜150℃で数分
〜数時間、引き続き約200〜300℃で数分〜数時間
加熱したのち、これを平板又はフィルムから引き剥がす
と得られる。
The adhesive in the form of a film (or a sheet) is prepared by appropriately diluting the resin composition of the present invention with the above-mentioned organic solvent, and then, on a flat plate such as a glass plate or a stainless plate, or a film such as polyester. After casting and coating with a constant thickness on the upper part, usually, it is first heated at about 80 to 150 ° C. for several minutes to several hours, and subsequently heated at about 200 to 300 ° C. for several minutes to several hours. Obtained by peeling from the film.

【0027】本発明の樹脂組成物をフィルム又はシート
等の基材に塗布もしくは展延し、あるいは含浸させた後
に、これを加熱・乾燥して、複層の接着フィルムや複合
シートとすることができる。用いられる基材としては、
フィルム、ガラス布、炭素繊維布、ポリアラミド布等の
クロス、銅箔、アルミ箔、ステンレス箔等の金属箔等が
ある。
After the resin composition of the present invention is applied or spread or impregnated on a substrate such as a film or sheet, it is heated and dried to form a multi-layer adhesive film or composite sheet. it can. As the substrate used,
Cloth such as film, glass cloth, carbon fiber cloth, and polyaramid cloth; and metal foil such as copper foil, aluminum foil, and stainless steel foil.

【0028】耐熱性フィルムの少なくとも片面に接着剤
の層が形成されている、本発明の接着フィルムは、本発
明の樹脂組成物を前記有機溶媒で適当に希釈した後、ベ
ースフィルムとなる耐熱性フィルムの片側又は両面に塗
布し、これを上記と同様に加熱処理して、製造すること
ができる。耐熱性フィルムの両面に塗布する場合、接着
剤の種類は同一でも異なっていても良い。接着剤を耐熱
性フィルムに塗布する方法は特に制限はない。ドクター
ブレードやナイフコーター、ダイコーター等いずれの方
法で塗布してもよい。また接着剤のワニス中にフィルム
を通して塗工してもよいが、厚みの制御が難しいので好
ましくない。
The adhesive film of the present invention, in which an adhesive layer is formed on at least one side of the heat-resistant film, is obtained by appropriately diluting the resin composition of the present invention with the above-mentioned organic solvent and then forming a heat-resistant base film. The film can be produced by coating the film on one side or both sides and subjecting it to a heat treatment in the same manner as described above. When applied to both surfaces of the heat resistant film, the type of adhesive may be the same or different. The method for applying the adhesive to the heat-resistant film is not particularly limited. The coating may be performed by any method such as a doctor blade, a knife coater, and a die coater. Further, the film may be applied through a film in a varnish of an adhesive, but it is not preferable because the thickness is difficult to control.

【0029】ここで用いられる耐熱性フィルムには、ポ
リイミド、ポリアミドやポリサルフォン、ポリフェニレ
ンサルファイド、ポリエーテルエーテルケトン、ポリア
リレート等のエンジニアリングプラスチック等のフィル
ムが挙げられる。耐熱性フィルムのガラス転移温度(T
g)は、接着剤のTgより高いものが使用され、好まし
くは200℃以上、より好ましくは250℃以上のもの
が使用される。耐熱性フィルムの吸水率は3重量%以
下、好ましくは2重量%以下のものが使用される。その
ため、耐熱性フィルムとしては、Tg、吸水率、熱膨張
係数の点からポリイミドフィルムが好ましく用いられ
る。特に、Tgが250℃以上、吸水率が2重量%以
下、熱膨張係数が3×10-5/℃以下の物性を備えたポ
リイミドフィルムが好ましい。
Examples of the heat-resistant film used herein include films of engineering plastics such as polyimide, polyamide, polysulfone, polyphenylene sulfide, polyether ether ketone, and polyarylate. Glass transition temperature (T
As g), one having a Tg higher than that of the adhesive is used, preferably 200 ° C. or more, more preferably 250 ° C. or more. A heat-resistant film having a water absorption of 3% by weight or less, preferably 2% by weight or less is used. Therefore, a polyimide film is preferably used as the heat-resistant film in terms of Tg, water absorption, and coefficient of thermal expansion. In particular, a polyimide film having physical properties such that Tg is 250 ° C. or more, water absorption is 2% by weight or less, and thermal expansion coefficient is 3 × 10 −5 / ° C. or less is preferable.

【0030】耐熱性フィルムは、接着剤との接着力を増
すために表面処理を施すことが望ましい。表面処理の方
法としては、アルカリ処理、シランカップリング処理等
の化学処理、サンドブラスト等の物理的処理、プラズマ
処理、コロナ処理等のいずれの処理も使用可能である
が、接着剤の種類に応じて最も適した処理を用いればよ
いが、好ましくは、化学処理またはプラズマ処理であ
る。
The heat-resistant film is desirably subjected to a surface treatment in order to increase the adhesive strength with the adhesive. As the surface treatment method, any treatment such as alkali treatment, chemical treatment such as silane coupling treatment, physical treatment such as sand blast, plasma treatment, corona treatment, etc. can be used, but depending on the type of adhesive. The most suitable treatment may be used, but preferably a chemical treatment or a plasma treatment.

【0031】本発明の接着フィルムをリード固定テープ
として用いる場合、耐熱性フィルムの片面に接着剤層を
形成させた接着フィルムが通常用いられるが、その接着
剤層面を保護フィルムで貼り合わせても良い。
When the adhesive film of the present invention is used as a lead fixing tape, an adhesive film having an adhesive layer formed on one surface of a heat-resistant film is usually used, but the adhesive layer surface may be bonded with a protective film. .

【0032】また、本発明のフィルム状の接着剤や接着
フィルムをリード固定テープ、LOCテープなどに使用
する場合には、270℃で10分加熱したときに、接着
剤の層の重量減少が加熱前の接着剤の層の重量に対して
1%(重量比)以下であることが好ましい。また、20
0℃以下で貼り付けた接着フィルム(接着テープ)が2
50℃で動かないことが好ましい。
When the film-like adhesive or the adhesive film of the present invention is used for a lead fixing tape, a LOC tape, or the like, when the adhesive is heated at 270 ° C. for 10 minutes, the weight of the adhesive layer decreases. It is preferably 1% (weight ratio) or less based on the weight of the previous adhesive layer. Also, 20
Adhesive film (adhesive tape) stuck at 0 ° C or less is 2
Preferably, it does not move at 50 ° C.

【0033】本発明の樹脂組成物又は接着剤には、セラ
ミック粉、ガラス粉、銀粉、銅粉、樹脂粒子、ゴム粒子
等のフィラーや、カップリング剤が添加されてもよい。
カップリング剤としては、ビニルシラン、エポキシシラ
ン、アミノシラン、メルカプトシラン、チタネート、ア
ルミキレート、ジルコアルミネート等のカップリング剤
が使用できるが、シランカップリング剤が好ましい。シ
ランカップリング剤としては、ビニルトリメトキシシラ
ン、ビニルトリエトキシシラン、ビニルトリス(β−メ
トキシエトキシ)シラン、β−(3、4−エポキシシク
ロヘキシル)エチルトリメトキシシラン、γ−グリシド
キシプロピルトリメトキシシラン、γ−グリシドキシプ
ロピルメチルジエトキシシラン、N−β−(アミノエチ
ル)−γ−アミノプロピルトリメトキシシラン、N−β
−(アミノエチル)−γ−アミノプロピルメチルジメト
キシシラン、γ−アミノプロピルトリエトキシシラン、
N−フェニル−γ−アミノプロピルトリメトキシシラ
ン、γ−メルカプトプロピルトリメトキシシラン等の末
端に有機反応性基をもつシランカップリング剤で、これ
らのうちエポキシ基を有するエポキシシラン系カップリ
ング剤が好ましく用いられる。なお、ここで有機反応性
基とは、エポキシ基、ビニル基、アミノ基、メルカプト
基等の官能基である。シランカップリング剤の添加は、
製造される半導体パッケージの耐リフロークラック性や
接着力を向上させるためで、樹脂分の総量100重量部
に対して、好ましくは1〜15重量部、更に好ましくは
2〜10重量部含有させることができる。
The resin composition or the adhesive of the present invention may contain fillers such as ceramic powder, glass powder, silver powder, copper powder, resin particles and rubber particles, and coupling agents.
As the coupling agent, a coupling agent such as vinyl silane, epoxy silane, amino silane, mercapto silane, titanate, aluminum chelate, and zircoaluminate can be used, but a silane coupling agent is preferable. Examples of the silane coupling agent include vinyltrimethoxysilane, vinyltriethoxysilane, vinyltris (β-methoxyethoxy) silane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane Γ-glycidoxypropylmethyldiethoxysilane, N-β- (aminoethyl) -γ-aminopropyltrimethoxysilane, N-β
-(Aminoethyl) -γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane,
N-phenyl-γ-aminopropyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, etc., a silane coupling agent having an organic reactive group at the terminal, of which an epoxysilane coupling agent having an epoxy group is preferable. Used. Here, the organic reactive group is a functional group such as an epoxy group, a vinyl group, an amino group, and a mercapto group. The addition of the silane coupling agent
In order to improve the reflow crack resistance and the adhesive strength of the semiconductor package to be manufactured, the content is preferably 1 to 15 parts by weight, more preferably 2 to 10 parts by weight, based on 100 parts by weight of the total amount of the resin. it can.

【0034】本発明の接着剤又は接着フィルムは、リー
ドフレームのリード固定テープとして使用されるほか、
LOCパッケージ、従来型パッケージ、COLパッケー
ジ、ヒートスプレッダー付パッケージ等の半導体パッケ
ージの接着部材に用いられ、チップとリードフレーム、
リードフレームとヒートスプレッダーの接着に使用する
こともできる。なお、接着剤又は接着フィルムの適用に
よっては、接着時の接着温度を低下させる目的でフィル
ム状接着剤又は接着フィルム中に溶剤を残存させてもよ
い。この場合、残存溶剤量は10重量%を超えない程度
までとする。
The adhesive or the adhesive film of the present invention is used as a lead fixing tape for a lead frame,
Used as an adhesive for semiconductor packages such as LOC package, conventional package, COL package, package with heat spreader, etc.
It can also be used to bond lead frames and heat spreaders. Depending on the application of the adhesive or the adhesive film, a solvent may be left in the film-like adhesive or the adhesive film for the purpose of lowering the bonding temperature at the time of bonding. In this case, the amount of the remaining solvent is set to a level not exceeding 10% by weight.

【0035】リードフレームのリード固定テープとして
使用した場合の半導体装置は、例えば、次のようにして
製造される。リードフレームのインナーリード部に、所
定の大きさの本発明の接着フィルム片又はフィルム状接
着剤片(接着部材)を150〜300℃、0.01〜1
0Mpaで、0.1〜10秒間の条件で熱圧着させた
後、リードフレームのダイパッド部にダイボンド材(銀
ペースト、ダイボンドフィルム等)を載せ、これに半導
体素子を載せて加圧接着させ、その後リードフレームと
半導体素子とを金線等で接合し、エポキシ樹脂等の封止
材で封止し、半導体装置とする(図1)。
A semiconductor device when used as a lead fixing tape for a lead frame is manufactured, for example, as follows. An adhesive film piece or a film-like adhesive piece (adhesive member) of the present invention having a predetermined size is applied to the inner lead portion of the lead frame at 150 to 300 ° C and 0.01 to 1 ° C.
After thermocompression bonding at 0 Mpa for 0.1 to 10 seconds, a die bonding material (silver paste, die bonding film, or the like) is mounted on a die pad portion of a lead frame, and a semiconductor element is mounted on the die bonding material and pressure-bonded. The lead frame and the semiconductor element are joined with a gold wire or the like, and sealed with a sealing material such as an epoxy resin to obtain a semiconductor device (FIG. 1).

【0036】また、本発明の接着フィルム(基材フィル
ムの両面に接着剤層)をLOCテープとして用いた半導
体装置の例を図2に、本発明の接着剤又は接着フィルム
(接着部材)を従来型パッケージのリードフレームと半
導体素子との接着に用いた半導体装置の例を図3に、本
発明の接着剤又は接着フィルム(接着部材)をヒートス
プレッダー付パッケージのリードフレームとヒートスプ
レッダーとの接着に用いた半導体装置の例を図4にそれ
ぞれ示した。
FIG. 2 shows an example of a semiconductor device using the adhesive film of the present invention (adhesive layers on both sides of a base film) as a LOC tape. FIG. 3 shows an example of a semiconductor device used for bonding a lead frame of a die package and a semiconductor element. The adhesive or the adhesive film (adhesive member) of the present invention is used for bonding a lead frame of a package with a heat spreader to a heat spreader. FIG. 4 shows examples of the semiconductor devices used.

【0037】[0037]

【実施例】以下、実施例により本発明を詳細に説明す
る。 実施例1 撹拌機、温度計、窒素ガス導入管を備えた1,000m
l四つ口フラスコに両末端にヒドロキシ基をもつポリエ
ーテル(HOー[(CH24ーO]nーH Mw=65
0)を65.0g(0.100モル)、ビスフェノール
Aビストリメリテート二無水物(BABT)を19.5
g(0.034モル)、スルホランを400g入れ、窒
素雰囲気下、撹拌しながら200℃に昇温した。ジフェ
ニルメタンジイソシアネートを33.5g(0.134
モル)加えたあと、200℃で2時間反応させた後、室
温まで冷却した。得られた反応物(共重合体反応液)を
メタノールに注ぎ、生じた沈殿を分離した。これをミキ
サーで粉砕し、水洗した後、乾燥してポリエーテル含量
55重量%のポリエーテルイミド粉末を得た。得られた
ポリエーテル粉末をポリエーテルイミド粉末をゲル浸透
クロマトグラフィー(以下、GPCと略す;溶離液はD
MF、液速度は1ml/分、検出はUV検出器)を用い
て測定したところ、重量平均分子量はポリスチレン換算
で220,000であった。このポリエーテルイミド粉
末の3.0gとγーグリシドキシプロピルトリメトキシ
シランの0.30g(CPLの量:10重量%)を秤り
取り、これにポリエーテルイミド粉末の濃度が25重量
%となるようにN,N−ジメチルホルムアミドを加えて
溶かし、ワニスを調製した。でき上がりの接着剤層厚さ
が25μmとなるように、ポリエステルフィルム上にこ
のワニスを塗布し、はじめに100℃、30分間加熱し
たのち、接着剤層をポリエステルフィルムから剥がし、
金枠に止め、更に250℃、10分間加熱して、厚さ2
5μmの単層のフィルム状接着剤を作製した。また、示
差熱天秤(昇温速度:10℃/分、空気中)を用いて5
%重量減少温度(以下、Tdと略す)を測定したとこ
ろ、320℃であった。また、270℃で10分間加熱
した際の重量減少は0.7重量%であった。別に、でき
上がりの接着剤層厚さが25μmとなるように、上記ワ
ニスを50μm厚の耐熱性ポリイミドフィルム(宇部興
産(株)製、ユーピレックスS)の片面に塗布し、前記
同様に加熱処理して、基材フィルム付接着テープを得
た。得られた基材フィルム付接着テープを10mm×2
0mmの大きさに切断し、これを接着剤層が接するよう
にリードフレーム材である銅合金に、温度:180℃、
圧力:3MPa及び時間:3秒の条件で圧着させたの
ち、JIS C6481に準じて90度引き剥し強さ
(測定温度:25℃、引っ張り速度:50mm/分)を
測定したところ、600N/mであった。また、接着温
度を70℃及び150℃とした場合の引き剥がし強さ
は、それぞれ150N/m及び600N/mであった。
60μm/60μm(ライン/スペース)の櫛型パター
ンが形成された2層フレキシブル配線板の櫛型パターン
部に上記基材フィルム付接着テープを貼り付け、156
℃、85%RH、5V印加の条件で抵抗値を測定したと
ころ、400h後でも1×1013(ohm)以上であっ
た。更に、180℃で接着させた基材フィルム付接着テ
ープを250℃の熱盤上に置き、ピンセットで斜め上方
から押したところこのテープは動かなかった。また、前
記の基材フィルム付接着テープを用い、図1に示す半導
体装置(パッケージ)を作製した。これを85℃、85
%RHで48時間吸湿させたのち、赤外線リフローを行
ったがパッケージクラックは生じなかった。
The present invention will be described below in detail with reference to examples. Example 1 1,000 m equipped with a stirrer, a thermometer, and a nitrogen gas inlet tube
polyethers having a hydroxy group at both ends l four-necked flask (HO chromatography [(CH 2) 4 over O] n over H Mw = 65
0), and 69.5 g (0.100 mol) of bisphenol A bistrimellitate dianhydride (BABT).
g (0.034 mol) and 400 g of sulfolane were added, and the temperature was raised to 200 ° C. while stirring under a nitrogen atmosphere. 33.5 g (0.134) of diphenylmethane diisocyanate
Mol), the mixture was reacted at 200 ° C. for 2 hours, and then cooled to room temperature. The obtained reaction product (copolymer reaction solution) was poured into methanol, and the generated precipitate was separated. This was pulverized with a mixer, washed with water, and dried to obtain a polyetherimide powder having a polyether content of 55% by weight. The obtained polyether powder was converted from polyetherimide powder by gel permeation chromatography (hereinafter abbreviated as GPC;
The weight average molecular weight was 220,000 in terms of polystyrene when measured using MF, a liquid speed of 1 ml / min, and detection using a UV detector. 3.0 g of this polyetherimide powder and 0.30 g of γ-glycidoxypropyltrimethoxysilane (CPL amount: 10% by weight) were weighed, and the concentration of the polyetherimide powder was 25% by weight. N, N-dimethylformamide was added and dissolved to obtain a varnish. This varnish is applied on a polyester film so that the finished adhesive layer thickness is 25 μm, and is first heated at 100 ° C. for 30 minutes, and then the adhesive layer is peeled off from the polyester film.
Stop at the metal frame and heat it further at 250 ° C for 10 minutes.
A 5 μm single layer film adhesive was prepared. In addition, using a differential thermobalance (heating rate: 10 ° C./min, in air)
The% weight loss temperature (hereinafter abbreviated as Td) was 320 ° C. The weight loss when heated at 270 ° C. for 10 minutes was 0.7% by weight. Separately, the varnish was coated on one side of a 50 μm thick heat-resistant polyimide film (UPILEX S, manufactured by Ube Industries, Ltd.) so that the finished adhesive layer thickness was 25 μm, and heat-treated in the same manner as described above. Thus, an adhesive tape with a base film was obtained. 10 mm × 2
It was cut into a size of 0 mm, and this was cut into a copper alloy as a lead frame material so that the adhesive layer was in contact therewith, at a temperature of 180 ° C.
After pressure-bonding under the conditions of pressure: 3 MPa and time: 3 seconds, the 90-degree peel strength (measuring temperature: 25 ° C., tensile speed: 50 mm / min) was measured according to JIS C6481, and it was 600 N / m. there were. The peeling strength when the bonding temperature was 70 ° C. and 150 ° C. was 150 N / m and 600 N / m, respectively.
The adhesive tape with the base film is attached to the comb pattern portion of the two-layer flexible wiring board on which the 60 μm / 60 μm (line / space) comb pattern is formed.
When the resistance was measured under the conditions of 5 ° C., 85% RH, and 5 V applied, the resistance was 1 × 10 13 (ohm) or more even after 400 hours. Further, the adhesive tape with the base film adhered at 180 ° C. was placed on a hot plate at 250 ° C. and pressed with a pair of tweezers from obliquely above, and the tape did not move. Further, the semiconductor device (package) shown in FIG. 1 was manufactured using the above-mentioned adhesive tape with a base film. 85 ℃, 85
After absorbing moisture for 48 hours at% RH, infrared ray reflow was performed, but no package crack occurred.

【0038】実施例2 撹拌機、温度計、窒素ガス導入管を備えた1,000m
l四つ口フラスコに両末端にヒドロキシ基をもつポリエ
ーテル(HOー[(CH24ーO]nーH Mw=65
0)を65.0g(0.100モル)、3,3’,4,
4’−ベンゾフェノンテトラカルボン酸二無水物(BT
DA)を15.4g(0.048モル)、スルホランを
400g入れ、窒素雰囲気下、撹拌しながら200℃に
昇温した。ジフェニルメタンジイソシアネートを37.
0g(0.148モル)加えたあと、200℃で2時間
反応させた後、室温まで冷却した。得られた反応物(共
重合体反応液)をメタノールに注ぎ、生じた沈殿を分離
した。これをミキサーで粉砕し、水洗した後、乾燥して
ポリエーテル含量55重量%のポリエーテルイミド粉末
を得た。得られたポリエーテル粉末をポリエーテルイミ
ド粉末をGPCを用いて測定したところ、重量平均分子
量はポリスチレン換算で190,000であった。この
ポリエーテルイミド粉末の3.0gとγーグリシドキシ
プロピルトリメトキシシランの0.30g(CPLの
量:10重量%)を秤り取り、これにポリエーテルイミ
ド粉末の濃度が25重量%となるようにN,N−ジメチ
ルホルムアミドを加えて溶かし、ワニスを調製した。次
に実施例1と同様にして単層のフィルム状接着剤を作製
した。得られたフィルム状接着剤のTdは320℃であ
った。また、270℃で10分間加熱した際の重量減少
は0.5重量%であった。次に、実施例1と同様にし
て、基材フィルム付接着テープを作製し、実施例1と同
じように試験した。基材フィルム付接着テープを銅合金
に圧着させたときの90度引き剥がし強さは500N/
mで、接着温度を70℃及び150℃とした場合の引き
剥がし強さはそれぞれ50N/m及び400N/mであ
った。60μm/60μm(ライン/スペース)の櫛型
パターンが形成された2層フレキシブル配線板の櫛型パ
ターン部に上記基材フィルム付接着テープをを貼り付
け、156℃、85%RH、5V印加の条件で抵抗値を
測定したところ、400h後でも1×1×1013(oh
m)以上であった。180℃で接着させた基材フィルム
付接着テープを250℃の熱盤上に置き、ピンセットで
斜め上方から押したところテープは動かなかった。
Example 2 1,000 m equipped with a stirrer, thermometer and nitrogen gas inlet tube
polyethers having a hydroxy group at both ends l four-necked flask (HO chromatography [(CH 2) 4 over O] n over H Mw = 65
0) to 65.0 g (0.100 mol), 3,3 ′, 4
4'-benzophenonetetracarboxylic dianhydride (BT
15.4 g (0.048 mol) of DA) and 400 g of sulfolane were added, and the mixture was heated to 200 ° C. while stirring under a nitrogen atmosphere. 37. diphenylmethane diisocyanate
After adding 0 g (0.148 mol), the mixture was reacted at 200 ° C. for 2 hours, and then cooled to room temperature. The obtained reaction product (copolymer reaction solution) was poured into methanol, and the generated precipitate was separated. This was pulverized with a mixer, washed with water, and dried to obtain a polyetherimide powder having a polyether content of 55% by weight. When the obtained polyether powder was measured for the polyetherimide powder using GPC, the weight average molecular weight was 190,000 in terms of polystyrene. 3.0 g of this polyetherimide powder and 0.30 g of γ-glycidoxypropyltrimethoxysilane (CPL amount: 10% by weight) were weighed, and the concentration of the polyetherimide powder was 25% by weight. N, N-dimethylformamide was added and dissolved to obtain a varnish. Next, a single-layer film-like adhesive was produced in the same manner as in Example 1. The Td of the obtained film adhesive was 320 ° C. The weight loss when heated at 270 ° C. for 10 minutes was 0.5% by weight. Next, an adhesive tape with a base film was prepared in the same manner as in Example 1, and the same test as in Example 1 was performed. The 90 degree peel strength when the adhesive tape with the base film is pressed against the copper alloy is 500 N /
m, and the peel strength when the bonding temperature was 70 ° C. and 150 ° C. was 50 N / m and 400 N / m, respectively. The adhesive tape with the base film is adhered to the comb pattern portion of the two-layer flexible wiring board on which the 60 μm / 60 μm (line / space) comb pattern is formed, and the conditions are 156 ° C., 85% RH, and 5 V applied. The resistance was measured at 1 × 1 × 10 13 (oh
m). The adhesive tape with the base film adhered at 180 ° C. was placed on a hot plate at 250 ° C. and pressed with a pair of tweezers from an obliquely upper side, and the tape did not move.

【0039】実施例3 撹拌機、温度計、窒素ガス導入管を備えた1,000m
l四つ口フラスコに両末端にヒドロキシ基をもつポリエ
ーテル(HOー[(CH24ーO]nーH Mw=65
0)を65.0g(0.100モル)、2,2ービス
[4ー(3,4ージカルボキシ)フェニル]プロバン二
無水物(BPADA)を18.7g(0.036モ
ル)、スルホランを400g入れ、窒素雰囲気下、撹拌
しながら200℃に昇温した。ジフェニルメタンジイソ
シアネートを34.0g(0.136モル)加えたあ
と、200℃で2時間反応させた後、室温まで冷却し
た。得られた反応物(共重合体反応液)をメタノールに
注ぎ、生じた沈殿を分離した。これをミキサーで粉砕
し、水洗した後、乾燥してポリエーテル含量55重量%
のポリエーテルイミド粉末を得た。得られたポリエーテ
ル粉末をポリエーテルイミド粉末をGPCを用いて測定
したところ、重量平均分子量はポリスチレン換算で17
0,000であった。このポリエーテルイミド粉末の
3.0gとγーグリシドキシプロピルトリメトキシシラ
ンの0.15g(CPLの量:5重量%)を秤り取り、
これにポリエーテルイミド粉末の濃度が25重量%とな
るようにN,N−ジメチルホルムアミドを加えて溶か
し、ワニスを調製した。次に実施例1と同様にして単層
のフィルム状接着剤を作製した。得られたフィルム状接
着剤のTdは320℃であった。また、270℃で10
分間加熱した際の重量減少は0.7重量%であった。次
に、実施例1と同様にして、基材フィルム付接着テープ
を作製し、実施例1と同じように試験した。基材フィル
ム付接着テープを銅合金に圧着させたときの90度引き
剥がし強さは600N/mで、接着温度を70℃及び1
50℃とした場合の引き剥がし強さはそれぞれ50N/
m及び500N/mであった。60μm/60μm(ラ
イン/スペース)の櫛型パターンが形成された2層フレ
キシブル配線板の櫛型パターン部に上記基材フィルム付
接着テープをを貼り付け、156℃、85%RH、5V
印加の条件で抵抗値を測定したところ、400h後でも
1×1×1013(ohm)以上であった。180℃で接着
させた基材フィルム付接着テープを250℃の熱盤上に
置き、ピンセットで斜め上方から押したところテープは
動かなかった。
Example 3 1,000 m equipped with a stirrer, thermometer and nitrogen gas inlet tube
polyethers having a hydroxy group at both ends l four-necked flask (HO chromatography [(CH 2) 4 over O] n over H Mw = 65
6) (0.100 mol), 18.7 g (0.036 mol) of 2,2-bis [4- (3,4-dicarboxy) phenyl] propane dianhydride (BPADA) and 400 g of sulfolane. The temperature was raised to 200 ° C. while stirring in a nitrogen atmosphere. After adding 34.0 g (0.136 mol) of diphenylmethane diisocyanate, the mixture was reacted at 200 ° C. for 2 hours, and then cooled to room temperature. The obtained reaction product (copolymer reaction solution) was poured into methanol, and the generated precipitate was separated. This is crushed with a mixer, washed with water, and dried to obtain a polyether content of 55% by weight.
Was obtained. When the obtained polyether powder was measured for the polyetherimide powder using GPC, the weight average molecular weight was 17 in terms of polystyrene.
It was 0000. 3.0 g of this polyetherimide powder and 0.15 g (amount of CPL: 5% by weight) of γ-glycidoxypropyltrimethoxysilane were weighed,
N, N-dimethylformamide was added and dissolved therein so that the concentration of the polyetherimide powder became 25% by weight, to prepare a varnish. Next, a single-layer film-like adhesive was produced in the same manner as in Example 1. The Td of the obtained film adhesive was 320 ° C. Also, at 270 ° C, 10
The weight loss upon heating for one minute was 0.7% by weight. Next, an adhesive tape with a base film was prepared in the same manner as in Example 1, and the same test as in Example 1 was performed. When the adhesive tape with the base film is pressed against a copper alloy, the 90-degree peel strength is 600 N / m, and the adhesive temperature is 70 ° C. and 1 ° C.
The peel strength at 50 ° C. was 50 N /
m and 500 N / m. The above-mentioned adhesive tape with a base film is attached to the comb-shaped pattern portion of the two-layer flexible wiring board on which a 60 μm / 60 μm (line / space) comb-shaped pattern is formed, 156 ° C., 85% RH, 5V
When the resistance value was measured under the conditions of application, it was 1 × 1 × 10 13 (ohm) or more even after 400 hours. The adhesive tape with the base film adhered at 180 ° C. was placed on a hot plate at 250 ° C. and pressed with a pair of tweezers from an obliquely upper side, and the tape did not move.

【0040】比較例1 アクリルニトリルブタジエンゴムとフェノール樹脂を主
成分としてなる熱硬化性樹脂を接着剤として用い、フィ
ルム状接着剤を製造した。以下、実施例1と同じように
して基材フィルム付接着テープを作製し、試験した。2
70℃で10分間加熱した際の重量減少は2.3重量%
であった。また得られた基材フィルム付接着テープを銅
合金に圧着させたときの90度引き剥がし強さは800
N/mで、接着温度を70℃及び150℃とした場合の
引き剥がし強さはそれぞれ50N/m及び750N/m
であった。60μm/60μm(ライン/スペース)の
櫛型パターンが形成された2層フレキシブル配線板の櫛
型パターン部に上記基材フィルム付接着テープをを貼り
付け、156℃、85%RH、5V印加の条件で抵抗値
を測定したところ、200h後には1×1013(ohm)
以下であった。
Comparative Example 1 A film-like adhesive was produced by using an acrylic nitrile-butadiene rubber and a thermosetting resin mainly composed of a phenol resin as an adhesive. Hereinafter, an adhesive tape with a base film was prepared and tested in the same manner as in Example 1. 2
2.3% by weight when heated at 70 ° C for 10 minutes
Met. The 90-degree peel strength when the obtained adhesive tape with a base film was pressed against a copper alloy was 800.
N / m, the peel strength when the bonding temperature was 70 ° C. and 150 ° C. was 50 N / m and 750 N / m, respectively.
Met. The adhesive tape with the base film is adhered to the comb pattern portion of the two-layer flexible wiring board on which the 60 μm / 60 μm (line / space) comb pattern is formed, and the conditions are 156 ° C., 85% RH, and 5 V applied. The resistance was measured at 1 × 10 13 (ohm) after 200 hours.
It was below.

【0041】[0041]

【発明の効果】請求項1〜3の樹脂組成物は、請求項4
〜8の接着剤及び請求項9、10の接着フィルムの原料
となる。請求項4〜6の接着剤は、耐熱性に優れ、電子
部品の接着に用いられる。請求項7、8の接着剤及び請
求項9、10の接着フィルムは、耐熱性に優れ、アウト
ガスが少なく、LOCテープ、リード固定テープ等の電
子部品の接着テープとして好適である。請求項11のリ
ードフレームを用いて製造される請求項12の半導体装
置は、信頼性が高い。
The resin composition according to any one of claims 1 to 3,
To 8 and the raw materials for the adhesive films of claims 9 and 10. The adhesive according to claims 4 to 6 has excellent heat resistance and is used for bonding electronic components. The adhesives according to claims 7 and 8 and the adhesive films according to claims 9 and 10 have excellent heat resistance and low outgassing, and are suitable as adhesive tapes for electronic components such as LOC tapes and lead fixing tapes. The semiconductor device according to claim 12 manufactured using the lead frame according to claim 11 has high reliability.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の接着フィルムをリード固定テープとし
て用いた半導体装置の例を示す断面模式図である。
FIG. 1 is a schematic cross-sectional view showing an example of a semiconductor device using an adhesive film of the present invention as a lead fixing tape.

【図2】本発明の接着フィルムをLOCテープとして用
いた半導体装置の例を示す断面模式図である。
FIG. 2 is a schematic cross-sectional view showing an example of a semiconductor device using the adhesive film of the present invention as a LOC tape.

【図3】本発明の接着剤又は接着フィルム(接着部材)
を従来型パッケージのリードフレームと半導体素子との
接着に用いた半導体装置の例を示す断面模式図である。
FIG. 3 shows the adhesive or adhesive film (adhesive member) of the present invention.
FIG. 3 is a schematic cross-sectional view showing an example of a semiconductor device used for bonding a semiconductor element to a lead frame of a conventional package.

【図4】本発明の接着剤又は接着フィルム(接着部材)
をヒートスプレッダー付パッケージのリードフレームと
ヒートスプレッダーとの接着に用いた半導体装置の例を
示す断面模式図である。
FIG. 4 is an adhesive or adhesive film (adhesive member) of the present invention.
FIG. 2 is a schematic cross-sectional view showing an example of a semiconductor device used for bonding a lead frame of a package with a heat spreader to a heat spreader.

【符号の説明】[Explanation of symbols]

1…本発明の接着部材 2…半導体素子 3…リードフレーム 4…ワイヤ 5…封止材 6…ダイボンド材 7…ヒートスプレッダー DESCRIPTION OF SYMBOLS 1 ... Adhesive member of this invention 2 ... Semiconductor element 3 ... Lead frame 4 ... Wire 5 ... Sealant 6 ... Die bond material 7 ... Heat spreader

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) C09J 179/08 C09J 179/08 Z B H01L 21/52 H01L 21/52 E (72)発明者 斉藤 則之 茨城県つくば市和台48 日立化成工業株式 会社筑波開発研究所内 Fターム(参考) 4J002 CM041 FD140 GJ01 GQ05 4J034 CA25 CA26 CB04 CB05 CB07 CC12 CC61 CC67 CC69 CD04 CD05 CD06 CD09 CD12 DA01 DA05 DB04 DB07 DG03 DG05 DG08 DG09 HA01 HA02 HA07 HB03 HB06 HB11 HB16 HC03 HC12 HC13 HC17 HC22 HC46 HC52 HC61 HC64 HC65 HC67 HC69 HC70 HC71 HC73 JA02 JA14 QC03 QC08 RA05 RA08 RA14 4J040 EF051 EF052 EF081 EF082 EF131 EF132 JA09 LA06 NA20 5F047 AA11 BA15 BA37 BB03 BC35──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) C09J 179/08 C09J 179/08 ZB H01L 21/52 H01L 21/52 E (72) Inventor Noriyuki Saito 48 Wadai, Tsukuba-shi, Ibaraki F-term in Tsukuba Development Laboratory, Hitachi Chemical Co., Ltd. (Reference) HA02 HA07 HB03 HB06 HB11 HB16 HC03 HC12 HC13 HC17 HC22 HC46 HC52 HC61 HC64 HC65 HC67 HC69 HC70 HC71 HC73 JA02 JA14 QC03 QC08 RA05 RA08 RA14 4J040 EF051 EF052 EF081 EF082 EF131 EF132 JA09 LA06 NA20 5F037

Claims (12)

【特許請求の範囲】[Claims] 【請求項1】 (a)テトラカルボン酸二無水物と、
(b)ジアミン又はジイソシアネートと、(c)式
(1)で示されるポリエーテル化合物を反応させて得ら
れる共重合体を含む樹脂組成物。 R−Q1−O−[Q2−O−]p−Q3−R (1) (Q1、Q2及びQ3は炭素数1〜10のアルキレン、
RはOH又はCOOH、pは0〜100の整数。)
(1) a tetracarboxylic dianhydride;
(B) A resin composition containing a copolymer obtained by reacting a diamine or diisocyanate with (c) a polyether compound represented by the formula (1). R-Q1-O- [Q2-O-] p-Q3-R (1) (Q1, Q2 and Q3 are alkylene having 1 to 10 carbon atoms,
R is OH or COOH, and p is an integer of 0-100. )
【請求項2】 (c)の重量が、(a)+(b)+
(c)の合計重量に対して30〜70%である請求項1
記載の樹脂組成物。
2. The weight of (c) is (a) + (b) +
2. The composition according to claim 1, wherein the content is 30 to 70% of the total weight of (c).
The resin composition as described in the above.
【請求項3】 テトラカルボン酸二無水物(a)は、ビ
スフェノールAビストリメリテート二無水物、2,2ー
ビス[4ー(3,4ージカルボキシ)フェニル]プロバ
ン二無水物及びベンゾフェノンテトラカルボン酸二無水
物から選ばれるテトラカルボン酸二無水物を、テトラカ
ルボン酸二無水物の総量に対して50モル%以上含むも
のである請求項1又は2記載の樹脂組成物。
3. The tetracarboxylic dianhydride (a) is bisphenol A bistrimellitate dianhydride, 2,2-bis [4- (3,4-dicarboxy) phenyl] propane dianhydride and benzophenone tetracarboxylic dianhydride. The resin composition according to claim 1, wherein the resin composition contains at least 50 mol% of a tetracarboxylic dianhydride selected from anhydrides based on the total amount of the tetracarboxylic dianhydride.
【請求項4】 (a)テトラカルボン酸二無水物と、
(b)ジアミン又はジイソシアネートと、(c)式
(1)で示されるポリエーテル化合物をを反応させて得
られる共重合体を含む接着剤。
(A) a tetracarboxylic dianhydride;
(B) An adhesive containing a copolymer obtained by reacting a diamine or diisocyanate with (c) a polyether compound represented by the formula (1).
【請求項5】 (c)の重量が、(a)+(b)+
(c)の合計重量に対して30〜70%である請求項4
記載の接着剤。
5. The weight of (c) is (a) + (b) +
The amount is 30 to 70% based on the total weight of (c).
The adhesive as described.
【請求項6】 テトラカルボン酸二無水物(a)は、ビ
スフェノールAビストリメリテート二無水物、2,2ー
ビス[4ー(3,4ージカルボキシ)フェニル]プロバ
ン二無水物及びベンゾフェノンテトラカルボン酸二無水
物から選ばれるテトラカルボン酸二無水物を、テトラカ
ルボン酸二無水物の総量に対して50モル%以上含むも
のである請求項4又は5記載の接着剤。
6. The tetracarboxylic dianhydride (a) is bisphenol A bistrimellitate dianhydride, 2,2-bis [4- (3,4-dicarboxy) phenyl] propane dianhydride and benzophenone tetracarboxylic dianhydride. The adhesive according to claim 4, wherein the adhesive contains at least 50 mol% of a tetracarboxylic dianhydride selected from anhydrides based on the total amount of the tetracarboxylic dianhydride.
【請求項7】 請求項4〜6記載のいずれかの接着剤の
層を含んでなるフィルム状の接着剤。
7. A film-like adhesive comprising the adhesive layer according to any one of claims 4 to 6.
【請求項8】 270℃で10分間加熱したときに、接
着剤の層の重量減少が加熱前の接着剤の層の重量に対し
て1%(重量比)以下である請求項7記載のフィルム状
の接着剤。
8. The film according to claim 7, wherein the weight loss of the adhesive layer when heated at 270 ° C. for 10 minutes is not more than 1% (weight ratio) with respect to the weight of the adhesive layer before heating. Glue.
【請求項9】 耐熱性フィルムの少なくとも片面に、請
求項4〜6記載のいずれかの接着剤の層が形成されてい
る接着フィルム。
9. An adhesive film having a heat-resistant film on at least one surface of which an adhesive layer according to any one of claims 4 to 6 is formed.
【請求項10】 270℃で10分間加熱したときに、
接着剤の層の重量減少が加熱前の接着剤の層の重量に対
して1%(重量比)以下である請求項9記載の接着フィ
ルム。
10. When heated at 270 ° C. for 10 minutes,
The adhesive film according to claim 9, wherein the weight loss of the adhesive layer is 1% or less (weight ratio) with respect to the weight of the adhesive layer before heating.
【請求項11】 請求項7もしくは8の接着剤又は請求
項9もしくは10の接着フィルムが貼り付けられている
リードフレーム。
11. A lead frame to which the adhesive according to claim 7 or 8 or the adhesive film according to claim 9 or 10 is attached.
【請求項12】 請求項11のリードフレームを備え、
少なくとも接着部材部分は封止材で封止されている半導
体装置。
12. A lead frame according to claim 11, further comprising:
A semiconductor device in which at least an adhesive member is sealed with a sealing material.
JP22443998A 1998-08-07 1998-08-07 Resin composition, adhesive, adhesive film, lead frame and semiconductor device using the same Expired - Fee Related JP3314158B2 (en)

Priority Applications (1)

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JP22443998A JP3314158B2 (en) 1998-08-07 1998-08-07 Resin composition, adhesive, adhesive film, lead frame and semiconductor device using the same

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Application Number Title Priority Date Filing Date
JP2001244587A Division JP2002128894A (en) 2001-08-10 2001-08-10 Copolymer

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001200232A (en) * 2000-01-14 2001-07-24 Hitachi Chem Co Ltd Adhesive, adhesive film and semiconductor apparatus by use thereof
JP2006265304A (en) * 2005-03-22 2006-10-05 Tokai Rubber Ind Ltd Adhesive composition and flexible printed circuit board produced by using the same
JP2006282995A (en) * 2005-03-08 2006-10-19 Chisso Corp Thermosetting polymer composition
WO2006126305A1 (en) * 2005-05-27 2006-11-30 Hitachi Chemical Company, Ltd. Modified polyurethane resin and adhesive composition using the same, method for connecting circuit member and connection structure of circuit member
JP2007088512A (en) * 2006-12-26 2007-04-05 Sharp Corp Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001200232A (en) * 2000-01-14 2001-07-24 Hitachi Chem Co Ltd Adhesive, adhesive film and semiconductor apparatus by use thereof
JP2006282995A (en) * 2005-03-08 2006-10-19 Chisso Corp Thermosetting polymer composition
JP2006265304A (en) * 2005-03-22 2006-10-05 Tokai Rubber Ind Ltd Adhesive composition and flexible printed circuit board produced by using the same
JP4704082B2 (en) * 2005-03-22 2011-06-15 住友電工プリントサーキット株式会社 Adhesive composition and flexible printed wiring board using the same
WO2006126305A1 (en) * 2005-05-27 2006-11-30 Hitachi Chemical Company, Ltd. Modified polyurethane resin and adhesive composition using the same, method for connecting circuit member and connection structure of circuit member
JP4743204B2 (en) * 2005-05-27 2011-08-10 日立化成工業株式会社 Modified polyurethane resin, adhesive composition using the same, circuit member connection method, and circuit member connection structure
JP2007088512A (en) * 2006-12-26 2007-04-05 Sharp Corp Semiconductor device
JP4527105B2 (en) * 2006-12-26 2010-08-18 シャープ株式会社 Semiconductor device

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