JP2000047258A - Electro-optic device and projection type display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To display a high quality image by improving an efficiency of incident light with respect to a liquid crystal device of such a constitution as is provided with a light-shielding film under TFTs(Thin Film Transistors) for switching pixels and micro lenses on a counter substrate. SOLUTION: A liquid crystal device is provided with a liquid crystal layer 50 held between a pair of substrates, and pixel electrodes 9a arranged in a matrix form on a TFT array substrate 10. A 1st light-shielding film 11a is formed under each TFT 30 of pixels, and at least partially specifies light- shielding areas. On a counter substrate, plural micro lenses 500 and a 2nd light- shielding film 23 flatly covered in the light-shielding area are formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention belongs to the technical field of an electro-optical device such as a liquid crystal device of an active matrix drive system driven by a thin film transistor (hereinafter referred to as a TFT as appropriate), and in particular, a TFT used for a projector or the like.
It belongs to the technical field of an electro-optical device of a type in which a light shielding film is provided on the lower side and a micro lens for improving the use efficiency of incident light is provided on a counter substrate.

[0002]

2. Description of the Related Art Conventionally, when a liquid crystal device of this type is used as a light valve in a liquid crystal projector or the like, generally, projection light is incident from the side of a counter substrate which is disposed opposite to a TFT array substrate with a liquid crystal layer interposed therebetween. You. Here, the projected light is an a-Si (amorphous silicon) film or a p-
When the light enters a region for channel formation made of a Si (polysilicon) film, a photoelectric current is generated in this region due to a photoelectric conversion effect, and the transistor characteristics of the TFT deteriorate. For this reason, a light-shielding film called a black matrix or a black mask is generally formed from a metal material such as Cr (chromium) or resin black on the opposite substrate at a position facing each TFT. This light-shielding film defines the opening area of each pixel (that is, the area through which the projection light is transmitted), thereby forming the p-S of the TFT.
In addition to shading the i-layer, it has functions of improving contrast, preventing color mixture of color materials, and the like.

Further, the data line is made of a light-shielding metal material such as Al (aluminum) so as to cover the channel region of the p-Si layer constituting the TFT when viewed from the side of the counter substrate. It is also common to use a line alone or in cooperation with the above-mentioned light shielding film to shield the p-Si layer of the TFT from light.

In this type of liquid crystal device, a regular stagger type or coplanar type a-Si or p-type transistor having a top gate structure (ie, a structure in which a gate electrode is provided above a channel on a TFT array substrate) is used. In the case of using a SiTFT, it is necessary to prevent a part of the projection light from being incident on the TFT channel from the TFT array substrate side as return light by the projection optical system in the liquid crystal projector.
Similarly, the reflected light from the surface of the TFT array substrate when the projected light passes therethrough, or when it is emitted from another liquid crystal device when a plurality of liquid crystal devices are used in combination for color, passes through the projection optical system after being emitted. It is also necessary to prevent some of the incoming projection light from entering the TFT channel from the TFT array substrate side as return light. For this purpose, Japanese Patent Application Laid-Open No. 9-12
No. 7497, Japanese Patent Publication No. 3-52611, Japanese Patent Application Laid-Open No. 3-125123, Japanese Patent Application Laid-Open No. 8-171101, and the like disclose a position facing a TFT on a TFT array substrate made of a quartz substrate or the like (that is, a TFT A liquid crystal device having a light-shielding film formed of, for example, an opaque high-melting point metal is also proposed on the lower side).

On the other hand, in this type of liquid crystal device, it is important to increase the pixel aperture ratio, which is the ratio of the pixel opening region to the entire image display region of the liquid crystal device, in order to brighten the screen. ), A scanning line and a capacitance line made of polysilicon and the like, and a TFT including a semiconductor layer and an insulating layer form a non-opening area in the image display area. There is a limit. In particular, when the pixel pitch is reduced in order to increase the pixel density to enable display of a high-definition image and to reduce the size of the liquid crystal device, various wirings and TFTs forming such non-opening areas are reduced in size. Since there is a certain limit to the operation, it is also difficult to increase the pixel aperture ratio.

Accordingly, for example, Japanese Patent Application Laid-Open No. 60-165621.
As disclosed in JP-A-165624 and JP-A-5-196926, there has been developed a liquid crystal device in which a microlens for improving the utilization efficiency of incident light is provided on a counter substrate. I have. In this case, if the pixel aperture ratio is the same, the light incident on the liquid crystal device from the side of the counter substrate is collected so as to enter the aperture region. Since the intensity of the light to be emitted increases, that is, the effective aperture ratio in each pixel increases,
Images displayed by the liquid crystal device can be brightened.

[0007]

However, under the general demand for higher quality and energy saving of the displayed image in the technical field of the liquid crystal device, the above-mentioned conventional liquid crystal device using a microlens has an incident light. Light use efficiency is not enough.

In particular, as in the prior art described above, TF
A structure in which a light-shielding film (hereinafter, referred to as a first light-shielding film) is provided below a TFT on a T-array substrate, and a light-shielding film (hereinafter, referred to as a second light-shielding film) is provided on a counter substrate on which microlenses are arranged. Is adopted, due to the presence of the second light shielding film,
Inevitably, there is a problem that light loss occurs in incident light.

The second light-shielding film and the second light-shielding film
When a configuration in which a light-shielding film is formed is adopted, a region that is shielded by one of the first and second light-shielding films when viewed from the side where incident light is incident (that is, the counter substrate side) is a non-opening region. Or, it becomes a light shielding area. Therefore, depending on the degree of misalignment that occurs when the opposing substrate and the TFT array substrate are mechanically bonded to each other, one of the first and second light-shielding films protrudes from the other in a plan view, so that the opening area is reduced. There is a problem that the width becomes narrower and the utilization efficiency of incident light is further reduced.

Therefore, in order to increase the efficiency of use of incident light,
It is conceivable to suppress the light loss by eliminating the second light-shielding film on the counter substrate side and to define the opening area of the pixel only with the first light-shielding film. However, in such a configuration, the mechanical strength of the counter substrate decreases. And use only the periphery of the TFT
Warpage and distortion are more remarkably generated in the counter substrate adhered to the array substrate. Also, with this configuration,
Since the ability of the opposing substrate to block heat incident from the opposing substrate together with the incident light is extremely reduced, the temperature of the liquid crystal increases, and the life of the liquid crystal is shortened. Further, since light penetrating the boundary of the microlens enters the liquid crystal, stray light due to multiple reflection or the like is generated in the liquid crystal device, causing image degradation. in this way,
Even if the first light-shielding film is provided solely with the function of defining the pixel opening area, the second light-shielding film is required on the opposing substrate for the various reasons described above as long as the microlens is provided on the opposing substrate. As a result, there is a problem that light loss is generated to an extent that cannot be ignored.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and uses a relatively simple structure to improve the use efficiency of incident light and to display an electro-optical device such as a liquid crystal device capable of displaying a high-quality image. It is an object to provide a device.

[0012]

In order to solve the above-mentioned problems, an electro-optical device according to the present invention comprises an electro-optical material sandwiched between a pair of first and second substrates. A plurality of pixel electrodes arranged in a matrix, a plurality of thin film transistors respectively driving the plurality of pixel electrodes, a plurality of data lines and a plurality of scanning lines which are respectively connected to the plurality of thin film transistors and cross each other, A first light-shielding film formed at a position covering each of at least channel regions of the plurality of thin film transistors as viewed from the first substrate side, and is incident on the second substrate from the second substrate side. A plurality of microlenses arranged in a matrix for condensing light on the plurality of pixel electrodes; and a second light-shielding film formed at a position opposed to a mutual boundary between the plurality of microlenses. The first light-shielding film at least partially defines a light-shielding region on the first substrate that partitions a plurality of pixel opening regions respectively corresponding to the plurality of pixel electrodes, and wherein the second light-shielding film is When viewed from the side of the first substrate, it is covered with the light shielding region.

According to the electro-optical device of the present invention, the incident light from the second substrate side is respectively focused on the plurality of pixel electrodes by the plurality of micro lenses provided on the second substrate. The thin film transistor is located in a light-shielding region defined at least partially by the first light-shielding film, that is, out of the light-collecting region on the pixel electrode by the microlens. Therefore, incident light from the second substrate side does not enter the channel region of the thin film transistor through the microlens. Further, at the boundary between the plurality of microlenses, incident light from the second substrate side is shielded by the second light-shielding film. Accordingly, it is possible to prevent incident light from the second substrate side from passing through the boundary of the microlens and directly entering the channel region of the thin film transistor, or entering after becoming stray light due to multiple reflection or the like. As described above, even if at least the light blocking on the second substrate side in the channel region of the thin film transistor is not performed by the data line made of the light blocking material, the light blocking in the channel region of the thin film transistor with respect to the incident light from the second substrate side is performed by the micro Sufficiently applied by the lens and the second light shielding film. On the other hand, at least the channel regions of the plurality of thin film transistors are respectively covered by the first light shielding film when viewed from the first substrate side. Therefore, it is possible to prevent a situation in which return light from the first substrate side or the like enters the channel region of the thin film transistor and the characteristics of the thin film transistor are deteriorated. As a result, the incident light, the return light, and the like are incident on the channel region, so that the characteristics of the thin film transistor are practically hardly or not degraded, and the thin film transistor can drive the electro-optical material with high accuracy. .

Since the incident light from the second substrate side is condensed on the pixel electrode by the microlens, the utilization efficiency of the incident light can be improved. At the same time, due to the presence of the second light-shielding film, the mechanical strength and the heat-shielding performance of the second substrate are each significantly improved as compared with the case where the second light-shielding film is not provided.

Here, the first light-shielding film at least partially defines a light-shielding region on the first substrate that partitions a plurality of pixel opening regions respectively corresponding to the plurality of pixel electrodes, and a second light-shielding film. Are covered by the light-blocking region when viewed from the first substrate side. That is, when viewed from the side of the first substrate, the outline of the second light-shielding film is located inside the outline of the light-shielding region. Therefore, even if the second light-shielding film is displaced in a plane with respect to the light-shielding region (or the first light-shielding film) due to a misalignment when the first and second substrates are mechanically bonded to each other, the gap between the two contours is not affected. Depending on the distance, the protrusion of the second light-shielding film from the first light-shielding film in a planar manner is completely or partially absorbed.

Furthermore, since the second light-shielding film has little or no effect on the aperture ratio as described above, a material having a lower dimensional accuracy than conventional Cr or the like should be used as the material of the second light-shielding film. Is also possible. Therefore, it is possible to use a material having a higher reflectance than conventional Cr, such as Al, for example, as the second light-shielding film. Thus, the incident light incident from the second substrate side can be reflected by the second light-shielding film with high reflectance, so that the temperature of the electro-optical device can be more efficiently increased according to the formation area of the second light-shielding film. It can also be suppressed.

In one aspect of the electro-optical device of the present invention, the first light-shielding film is formed in a mesh shape, and defines the light-shielding region alone.

According to this aspect, the light condensed by the microlens passes through the pixel opening region defined by the first light-shielding film, and passes through the electro-optical device as display light.

In another aspect of the electro-optical device according to the present invention, the data line is formed of a light-shielding and conductive thin film, and defines a region along the data line in the light-shielding region. The first light shielding film is formed in a stripe shape along each of the plurality of scanning lines, and defines a region along the scanning line among the light shielding regions.

According to this aspect, the light condensed by the microlens passes through the data line composed of the light-shielding thin film and the pixel aperture area defined by the first light-shielding film, and is used for display light. Through the liquid crystal device. In this aspect, in particular, if the channel region of the thin film transistor is located below the data line as viewed from the second substrate side, light shielding on the second substrate side in the channel region of the thin film transistor can be further ensured. Can be done. In particular, stray light that tends to enter the channel region from the second substrate side can be reliably shielded by multiple reflections that can occur when the second light-shielding film is made of a reflective material.

In another aspect of the electro-optical device according to the present invention, the scanning line is formed of a light-shielding and conductive thin film, and defines a region along the scanning line in the light-shielding region. The first light-shielding film is formed in a stripe shape along each of the plurality of data lines, and defines a region along the data line among the light-shielding regions.

According to this aspect, the light condensed by the microlens passes through the scanning line formed of the light-shielding thin film and the pixel opening area defined by the first light-shielding film, and is used for display light. Through the electro-optical device. In this aspect, in particular, if the channel region of the thin film transistor is located below the scanning line as viewed from the second substrate side, the light shielding on the second substrate side in the channel region of the thin film transistor can be further ensured. Can be done.

In the aspect in which the data line or the scanning line is formed of a light-shielding and conductive thin film, the light-shielding and conductive thin film may be formed of a metal or metal alloy thin film. .

According to this structure, for example, a data line or a scanning line for defining a light shielding region can be formed relatively easily from a thin film of a metal such as Al or a metal alloy.

In another aspect of the electro-optical device of the present invention, a plurality of capacitance lines for respectively providing a predetermined storage capacitance to the pixel electrodes are provided on the first substrate in parallel with the scanning lines. The capacitance line is located in the light shielding region on the first substrate.

According to this aspect, it is possible to realize a high-contrast ratio or high-resolution image display while lowering the duty ratio of the image signal in each pixel electrode according to the storage capacitance provided by the capacitance line. Also, since it is located in the light-shielding region, it is possible to prevent the occurrence of a blank display due to the provision of the capacitance line, and furthermore, the disclination of the electro-optical material caused by the capacitance line is less than the electro-optical material in the opening region. The adverse effects can be made to have little or no practical effect.

In another aspect of the electro-optical device according to the present invention, the second light-shielding film is formed in a mesh shape along boundaries of the plurality of microlenses.

In this embodiment, the second light-shielding film has a mesh shape and is similar or substantially similar to the contour of the light-shielding region. Therefore,
If the area where the second light-shielding film is formed is enlarged in the range covered by the light-shielding area, the function of the second light-shielding film to shield or reflect incident light that is going to enter the inside of the electro-optical device can be improved. Temperature rise in the device can be suppressed. Furthermore, the second light-shielding film can redundantly have the light-shielding function of the first light-shielding layer and the like that define the light-shielding region and the function of defining the opening region.

In another aspect of the electro-optical device of the present invention, the second light-shielding film is formed in a stripe shape along each of the boundaries of the plurality of microlenses in the direction along the scanning line. I have.

According to this aspect, the second light-shielding film having a striped outline that is relatively easy to form can shield or reflect incident light that is going to enter the inside of the electro-optical device. The rise can be suppressed. Furthermore, the second light-shielding film can redundantly have the light-shielding function of the first light-shielding film defining the light-shielding region and the function of defining the opening region.

In another aspect of the electro-optical device of the present invention, the second light-shielding film is formed in an island shape along a boundary of the plurality of microlenses in a direction along the scanning line. I have.

According to this aspect, the second light-shielding film having an island-like contour, which is relatively easy to form, can shield or reflect the projected light that is going to enter the inside of the electro-optical device. The rise can be suppressed. In particular, since the second light-shielding film does not have a function of defining a light-shielding region (or an opening region), the second light-shielding film is formed in an island shape only in the minimum region required for light-shielding and strength on the second substrate. By doing so, a margin can be given to the bonding accuracy between the TFT array substrate and the counter substrate.

In another aspect of the electro-optical device according to the present invention, the light-shielding region is defined in accordance with the converging angle of the microlens so as not to protrude into the converging region of the microlens on the pixel electrode. I have.

As the focusing angle or the focusing ability of the microlens is larger, the focusing area on the pixel electrode is smaller.
If the light-shielding area defined by the light-shielding film is set large,
Irrespective of the converging angle of the microlenses, light loss due to light shielding in the first and second light shielding films can be suppressed to a low level.

In another aspect of the electro-optical device of the present invention, the first light-shielding film is made of Ti, Cr, W, Ta, Mo, and Pd.
At least one of the following.

According to this aspect, the first light-shielding film is made of Ti, Cr, W, Ta, Mo, and P, which are opaque refractory metals.
d, including at least one of, for example, a metal simple substance,
Since the first light-shielding film is formed of an alloy, a metal silicide, or the like, the first light-shielding film can be prevented from being broken or melted by the high-temperature treatment in the TFT forming step performed after the light-shielding film forming step on the first substrate.

In another aspect of the electro-optical device according to the present invention, the second light-shielding film is formed of a thin film of a metal or a metal alloy.

According to this aspect, since the second light-shielding film is composed of a thin film of a metal such as Al or a metal alloy, the reflectance of the second light-shielding film is much higher than that of conventional Cr, for example, 90% or more. Can be higher. Therefore, it is possible to improve the reflection function of the second light-shielding film with respect to the incident light that is going to enter the inside of the electro-optical device, and accordingly, it is possible to suppress the temperature rise in the electro-optical device.

In the projection display device using the electro-optical device of the present invention, a light source, a condensing optical system for condensing light emitted from the light source and guiding the light to the electro-optical device, And a magnifying projection optical system for magnifying and projecting the light modulated light onto the projection surface.

According to the projection display of the present invention, a projection display capable of displaying a high-quality image can be realized.

The operation and other advantages of the present invention will become more apparent from the embodiments explained below.

[0042]

Embodiments of the present invention will be described below with reference to the drawings.

(Pixel Section of Electro-Optical Device) A liquid crystal device will be described as an example of the electro-optical device according to the present invention. First, a pixel portion of a liquid crystal device will be described with reference to FIGS. FIG. 1 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming an image display area of a liquid crystal device. FIG. 2 is a plan view of a plurality of pixel groups adjacent to each other on a TFT array substrate on which data lines, scanning lines, pixel electrodes, a first light-shielding film, etc. are formed, and a second light-shielding film and a microlens formed on a counter substrate. It is. FIG. 3 is a schematic diagram showing a state in which incident light is condensed by a microlens formed on a counter substrate in a pseudo cross section.
FIG. 4 is an enlarged cross-sectional view showing a TFT array substrate portion relating to one TFT shown in FIG. 3 in an enlarged manner. In FIGS. 3 and 4, the scale of each layer and each member is made different so that each layer and each member have a size recognizable in the drawings. In order to draw easily, the arrangement relationship of the micro lens and the TFT is
It is different from the actual arrangement. That is, actually, as shown in FIG. 2, the microlenses are arranged so that the lens centers thereof coincide with the pixel centers.
The FT is arranged so as to substantially correspond to the intersection of the light-shielding regions.

In FIG. 1, a plurality of pixels formed in a matrix and constituting an image display area of the liquid crystal device according to the present embodiment have TFTs 3 for controlling a pixel electrode 9a.
A plurality of 0s are formed in a matrix, and the data line 6a to which an image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn to be written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied to a plurality of adjacent data lines 6a for each group. good. Also, T
The scanning line 3a is electrically connected to the gate of the FT 30, and is configured to apply the scanning signals G1, G2,..., Gm in a pulsed manner to the scanning line 3a in this order at a predetermined timing. ing. The pixel electrode 9a is a TFT 30
Of the TFT 30 which is a switching element and is closed by a switch for a predetermined period, so that the image signal S supplied from the data line 6a is provided.
1, S2,..., Sn are written at a predetermined timing. The image signals S1, S2,..., Sn of a predetermined level written in the liquid crystal as the electro-optical material through the pixel electrodes 9a are:
It is held for a certain period between a counter electrode (to be described later) formed on a counter substrate (to be described later). The liquid crystal modulates light by changing the orientation and order of the molecular assembly according to the applied voltage level, thereby enabling gray scale display. In the normally white mode, the incident light cannot pass through the liquid crystal portion according to the applied voltage. In the normally black mode, the incident light passes through the liquid crystal portion according to the applied voltage. The liquid crystal device emits light having a contrast corresponding to the image signal as a whole. Here, in order to prevent the held image signal from leaking, a storage capacitor 70 is added in parallel with a liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. For example, the voltage of the pixel electrode 9a is held by the storage capacitor 70 for a time that is three orders of magnitude longer than the time during which the source voltage is applied. Thereby, the holding characteristics are further improved, and a liquid crystal device having a high contrast ratio can be realized.

In FIG. 2, a plurality of transparent pixel electrodes 9a are arranged in a matrix on a TFT array substrate of a liquid crystal device.
(Indicated by the dotted line),
The data lines 6a,
A scanning line 3a and a capacitance line 3b are provided. Further, a TFT 30 is provided substantially corresponding to each intersection of these wirings. In the figure, each data line 6a, which is indicated by a dashed line and extends in the vertical direction, is connected to the TFT 30 of the semiconductor layer 1a made of a polysilicon film or the like via the contact hole 5.
Are electrically connected to the source region. Pixel electrode 9a
Represents T in the semiconductor layer 1a through the contact hole 8.
It is electrically connected to the drain region of the FT 30. Each scanning line 3a extending in the left-right direction in the figure is
a, the scanning line 3a is disposed so as to face the channel region 1a '(the hatched region on the lower right in the figure).
It functions as the gate electrode of FT30.

The capacitance line 3b has a main line portion extending substantially linearly along the scanning line 3a, and a protruding portion projecting upward in the figure along the data line 6a from a portion intersecting the data line 6a. The semiconductor layer 1a extends from the TFT 30 along the capacitor line 3b as a storage capacitor electrode 1f, and the storage capacitor electrode 1f and the capacitor line 3b are connected to an insulating film (gate insulating film) described later as a dielectric. , A storage capacitor is formed.

In the figure, the scanning line 3a is shown by a one-dot chain line.
A first light-shielding film 11a composed of a plurality of striped portions is provided in a region extending in the left-right direction along the capacitor line 3b. More specifically, the first light-shielding film 11a is
And is divided into a plurality of striped portions extending along the main line portion of the capacitor line 3b, and each striped portion projects downward along the data line 6a from a point intersecting the data line 6a. The protrusions cover the TFTs 30 including the channel region 1a 'of the semiconductor layer 1a.

FIG. 2 further shows that each pixel electrode 1
The microlens ends 500a of the plurality of microlenses formed to face each of the microlenses 1a, and the mesh-shaped second light-shielding films 23 (upward to the right in the drawing) arranged on the counter substrate so as to face the plurality of microlens ends 500a, respectively. ).

In this embodiment, in particular, a mesh-shaped light-shielding region is defined on the TFT array substrate from the first light-shielding film 11a and the data line 6a made of an Al (aluminum) film as an example of a light-shielding metal film. And the mesh-shaped second light-shielding film 2
Reference numeral 3 is planarly covered by the light shielding area. That is, the outline of the second light-shielding film 23 in plan view is included in the outline of the light-shielding region. Each pixel electrode 9a surrounded by the light-shielding region defines a pixel opening region that is a region through which incident light is transmitted. The incident light condensed by the microlens is condensed on a circular condensing area 500b indicated by a broken line in the figure.

As shown in FIG. 3, the TFT array substrate 10
And the opposing substrate 20 are arranged to face each other, and the liquid crystal layer 5 is interposed between the substrates.
0 is pinched. The TFT array substrate 10 is made of, for example, a quartz substrate, and the counter substrate 20 is made of, for example, a glass substrate or a quartz substrate.

As shown in the cross-sectional view of the upper half of the schematic diagram of FIG. 3, on the opposing substrate 20 of the liquid crystal device, incident light incident from the opposing substrate 20 is condensed on a plurality of pixel electrodes 9a. A plurality of microlenses 500 arranged in a matrix, and a second light-shielding film 23 formed at a position facing each boundary of the plurality of microlenses 500. An adhesive 50 is applied to the entire surface of the microlens 500.
1, a cover glass 502 is attached, and a second light-shielding film 23 and a counter electrode 21 are further formed thereon (at the lower side in the figure). The microlens 500 is made of a photosensitive resin as described later, and the adhesive 501 is made of an acrylic adhesive having a refractive index close to that of air.
It functions as a condenser lens.

In the sectional view of the lower half of the schematic diagram of FIG. 3 and the enlarged sectional view of FIG.
The pixel electrode 9a is provided, and an alignment film 16 on which a predetermined alignment process such as a rubbing process is performed is provided above the pixel electrode 9a. The pixel electrode 9a is made of, for example, a transparent conductive thin film such as an ITO film (indium tin oxide film). The alignment film 16 is made of, for example, an organic thin film such as a polyimide thin film.

On the other hand, as shown in the upper half cross-sectional view of the schematic diagram of FIG. 3, the counter substrate 20 is provided with a counter electrode (common electrode) 21 over the entire surface thereof, Is provided with an alignment film 22 that has been subjected to a predetermined alignment process such as a rubbing process. The counter electrode 21 is made of, for example, ITO.
It is composed of a transparent conductive thin film such as a film. The alignment film 22 is
It is made of an organic thin film such as a polyimide thin film.

As shown in the enlarged cross-sectional view of FIG. 4, the TFT array substrate 10 has a position adjacent to each pixel electrode 9a.
A pixel switching TFT 30 that controls the switching of each pixel electrode 9a is provided.

A sealing material described later (see FIGS. 10 and 11) is provided between the TFT array substrate 10 and the opposing substrate 20, which are configured as described above and are arranged so that the pixel electrode 9a and the opposing electrode 21 face each other. The liquid crystal which is an electro-optical material is sealed in the space surrounded by the parentheses, and the liquid crystal layer 50 is formed. The liquid crystal layer 50 adopts a predetermined alignment state by the alignment films 16 and 22 when no electric field is applied from the pixel electrode 9a. The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several kinds of nematic liquid crystals are mixed. The sealing material is for bonding the two substrates 10 and 20 around them,
For example, it is an adhesive made of a photocurable resin or a thermosetting resin, and a spacer such as glass fiber or glass bead for mixing the distance between the two substrates to a predetermined value is mixed.

As shown in FIG. 4, the pixel switching T
A first light-shielding film 11a is provided between the TFT array substrate 10 and each pixel switching TFT 30 at a position facing each FT 30. First light shielding film 11a
Are preferably opaque refractory metals Ti, Cr,
It is composed of a metal simple substance, an alloy, a metal silicide or the like containing at least one of W, Ta, Mo and Pd. With such a material, the first light-shielding film 11a is not broken or melted by high-temperature processing in the step of forming the pixel switching TFT 30 performed after the step of forming the first light-shielding film 11a on the TFT array substrate 10. I can do it. Since the first light-shielding film 11a is formed, return light and the like from the side of the TFT array substrate 10 are transmitted to the channel region 1a 'of the pixel switching TFT 30 or the LDD.
The incident on the regions 1b and 1c can be prevented beforehand, and the pixel switching TFT 30
Does not deteriorate.

A first interlayer insulating film 12 is provided between the first light shielding film 11a and the plurality of pixel switching TFTs 30.
Is provided. The first interlayer insulating film 12 is provided for electrically insulating the semiconductor layer 1a constituting the pixel switching TFT 30 from the first light-shielding film 11a. Further, the first interlayer insulating film 12 is formed on the TFT array substrate 1.
By being formed on the entire surface of 0, it also has a function as a base film for the pixel switching TFT 30. That is, the pixel switching TFT 3 may be roughened during polishing of the surface of the TFT array substrate 10 or stains remaining after cleaning.
0 has the function of preventing the deterioration of the characteristic. The first interlayer insulating film 12 is made of, for example, a highly insulating glass such as NSG (non-doped silicate glass), PSG (phosphosilicate glass), BSG (boron silicate glass), BPSG (boron phosphorus silicate glass), or a silicon oxide film. , A silicon nitride film or the like. Due to the first interlayer insulating film 12, the first light-shielding film 11a is formed by the pixel switching TFT 3
It is also possible to prevent a situation where 0 or the like is contaminated.

In this embodiment, the gate insulating film 2 extends from a position facing the scanning line 3a and is used as a dielectric film, and the semiconductor layer 1a extends to form a first storage capacitor electrode 1f. A storage capacitor 70 is formed by using a part of the capacitor line 3b opposed to the first storage capacitor electrode as a second storage capacitor electrode. More specifically, a high-concentration drain region 1e of the semiconductor layer 1a extends below the data line 6a and the scanning line 3a, and an insulating film is formed on a portion of the capacitance line 3b extending along the data line 6a and the scanning line 3a. The first storage capacitor electrode (semiconductor layer) 1f is opposed to the first storage capacitor electrode 2 via the second storage capacitor electrode 2. In particular, since the insulating film 2 as a dielectric of the storage capacitor 70 is nothing but the gate insulating film 2 of the TFT 30 formed on the polysilicon film by high-temperature oxidation, it can be a thin and high withstand voltage insulating film. The capacitor 70 can be configured as a large-capacity storage capacitor with a relatively small area.

As a result, a space outside the opening area, that is, the area below the data line 6a and the area where the liquid crystal disclination occurs along the scanning line 3a (ie, the area where the capacitance line 3b is formed) is effectively used. Utilizing the pixel electrode 9a
Storage capacity can be increased.

In FIG. 4, a TFT for pixel switching is used.
Reference numeral 30 denotes an LDD (Lightly Doped Drain) structure, and includes a scanning line 3a and a channel region 1 of a semiconductor layer 1a in which a channel is formed by an electric field from the scanning line 3a.
a ', gate insulating film 2 for insulating scanning line 3a from semiconductor layer 1a, data line 6a, low-concentration source region (source-side LDD region) 1b and low-concentration drain region (drain-side LDD region) 1c of semiconductor layer 1a , A high concentration source region 1d and a high concentration drain region 1e of the semiconductor layer 1a. A plurality of pixel electrodes 9 are provided in the high-concentration drain region 1e.
The corresponding one of a is connected. The source regions 1b and 1d and the drain regions 1c and 1e are formed by doping the semiconductor layer 1a with a predetermined concentration of n-type or p-type dopant depending on whether an n-type or p-type channel is formed. Is formed. T for n-type channel
The FT has an advantage that the operation speed is fast, and is often used as the pixel switching TFT 30 which is a pixel switching element. In the present embodiment, in particular, the data line 6a is formed of a light-shielding thin film such as a low-resistance metal film such as Al or an alloy film such as metal silicide. Further, the scanning line 3a, the gate insulating film 2, and the first interlayer insulating film 1
Above 2, a second interlayer insulating film 4 is formed in which a contact hole 5 leading to the high-concentration source region 1d and a contact hole 8 leading to the high-concentration drain region 1e are formed. Contact hole 5 to source region 1b
, The data line 6a is electrically connected to the high-concentration source region 1d. Further, a third interlayer insulating film 7 having a contact hole 8 to the high-concentration drain region 1e is formed on the data line 6a and the second interlayer insulating film 4. The pixel electrode 9a is connected to the high-concentration drain region 1e through the contact hole 8 to the high-concentration drain region 1e.
Is electrically connected to The above-described pixel electrode 9a is provided on the upper surface of the third interlayer insulating film 7 configured as described above. The pixel electrode 9a and the high-concentration drain region 1e may be electrically connected to each other by relaying the same Al film as the data line 6a or the same polysilicon film as the scanning line 3b.

The pixel switching TFT 30 preferably has the LDD structure as described above, but may have an offset structure in which impurity ions are not implanted into the low-concentration source region 1b and the low-concentration drain region 1c. A self-aligned TFT in which impurity ions are implanted at a high concentration using 3a as a mask to form high-concentration source and drain regions in a self-aligned manner may be used.

In the present embodiment, the gate electrode (data line 3a) of the pixel switching TFT 30 is connected to the source
Although only one single gate structure is arranged between the drain regions 1b and 1e, two or more gate electrodes may be arranged between them. At this time, the same signal is applied to each gate electrode. When a TFT is formed with a dual gate (double gate) or triple gate or more as described above, a leak current at a junction between a channel and a source-drain region can be prevented, and a current in an off state can be reduced. If at least one of these gate electrodes has an LDD structure or an offset structure, the off-state current can be further reduced, and a stable switching element can be obtained.

According to the liquid crystal device of the present embodiment, as described above, according to the liquid crystal device of the present embodiment, the plurality of microlenses 500 provided on the opposite substrate 20 allow the incident light from the opposite substrate 20 Are condensed on the pixel electrodes 9a. Therefore, the effective aperture ratio in each pixel is increased as compared with the case where the micro lens 500 is not provided.

The TFT 30 has a first light-shielding film 11a.
And within the light-blocking area (see FIG. 2) defined by the data line 6a, that is, the pixel electrode 9 by the microlens 500.
a. For this reason, the incident light from the counter substrate 20 side is
Practically, there is little or no incident light to the channel region of the TFT 30 through 0. Further, at the mutual boundary between the plurality of microlenses 500, the incident light from the counter substrate 20 side is shielded by the second light shielding film 23. Therefore,
It is possible to prevent incident light from the counter substrate 20 side from passing through the boundary of the microlens 500 and directly entering the channel region of the TFT 30 or entering after becoming stray light due to multiple reflection or the like.

As described above, even if the light shielding on the counter substrate 20 side in the channel region 1a 'of the TFT 30 is not performed by the data line 6a made of a metal thin film,
Channel region 1 of TFT 30 for incident light from the side
The light shielding at a ′ is sufficiently performed by the microlens 500 and the second light shielding film 23. On the other hand, as described above, the channel region 1 of each TFT 30 is formed by the first light shielding film 11a.
a ′ is covered when viewed from the TFT array substrate 10 side. Therefore, the return light from the TFT array substrate 10 enters the channel region 1a 'of the TFT 30 and
Can be prevented from being deteriorated. As a result, there is practically little or no deterioration in the characteristics of the TFT 30 due to the incidence of incident light or return light on the channel region 1a 'of the TFT 30, and in the liquid crystal device of the present embodiment, the accuracy of the TFT 30 High liquid crystal driving is enabled.

In addition, the light-shielding area defined by the first light-shielding film 11a and the data line 6a has functions such as improvement of contrast and prevention of color mixing of color materials.

Then, the incident light from the counter substrate 20 side is respectively condensed on the condensing area 500b on the pixel electrode 9a by the microlens 500 (see FIG. 2), so that the utilization efficiency of the incident light is improved. At the same time, due to the presence of the second light-shielding film 23, the mechanical strength and the heat-shielding performance of the opposing substrate 20 are each significantly improved as compared with the case where the second light-shielding film 23 is not provided.

Here, as described above, the second light shielding film 23
The first light-shielding film 11a and the data lines 6a cover a light-shielding region defined on the TFT array substrate 10 in a plan view. That is, when viewed from the TFT array substrate 10 side, the outline of the second light-shielding film 23 is located inside the outline of the light-shielded region. Therefore, even if the second light-shielding film 23 is two-dimensionally shifted with respect to the light-shielding region (or the first light-shielding film 11a) due to a misalignment when the two substrates are mechanically bonded to each other, the distance between the two contours is different. According to the first light shielding film 11 of the second light shielding film 23
A or a planar protrusion from the data line 6a is completely or partially absorbed. In other words, the second light-shielding film 23 does not have a function of defining the light-shielding region or the pixel opening region, and only needs to be provided at the minimum at the boundary of the microlens 500 as described above. By setting the formation area of the second light-shielding film 23 small in consideration of the misalignment, the misalignment can have no effect on the pixel aperture ratio. For this reason, the pixel opening area does not need to be narrowed at all or only slightly narrowed depending on a slight misalignment within the predetermined allowable range.

Furthermore, since the second light-shielding film 23 has little or no effect on the pixel aperture ratio as described above,
It is also possible to use a material whose dimensional accuracy is not high as compared with r or the like as the material of the second light shielding film 23. Therefore, the reflectance is higher than that of the conventional Cr or the like, but it is difficult to obtain a high accuracy. For example, a material such as Al can be used as the second light shielding film 23. Accordingly, the incident light incident from the counter substrate 20 side can be reflected at a high reflectance by the second light shielding film 23, so that the temperature rise of the liquid crystal device can be more efficiently increased according to the formation area of the second light shielding film 23. It is also possible to keep it low.

In this embodiment, in particular, as shown in FIGS. 2 and 3, the micro lens 5 is formed on the pixel electrode 9a.
The light-shielding region including the first light-shielding film 11a and the data line 6a is defined according to the light-converging angle of the microlens 500 so as not to protrude into the light-collecting region 500b. Here, as the focusing angle or the focusing ability of the microlens 500 increases, the focusing area 500b on the pixel electrode 9a increases.
Of the light-collecting region 500b
If you set the light-blocking area large within the range that does not protrude,
Irrespective of the converging angle of the microlens 500, light loss due to light shielding in the first light-shielding film 11a and the second light-shielding film 23 can be reduced. Therefore, the liquid crystal device of the present embodiment can be configured using the microlenses 500 having various curvatures and shapes.

Further, as described above, the second light-shielding film 23 is formed of an Al film or the like as an example of a metal or metal alloy thin film. Therefore, the second light-shielding film 23 has a reflectance of
For example, it can be much higher than conventional Cr, such as 90 percents. For this reason, the reflection function of the second light-shielding film 23 with respect to the incident light that is going to enter the inside of the liquid crystal device can be improved, and accordingly, the temperature rise in the liquid crystal device can be suppressed. In addition, as described above, the second light-shielding film 23
Since it does not have the function of defining the light-shielding region, it is possible to use a metal material such as Al, which does not provide dimensional accuracy, as the material.

In the present embodiment, the first light shielding film 11a is
It is connected to a constant potential source and has a constant potential. Therefore, the pixel switching TFT disposed opposite to the first light shielding film 11a
30 does not adversely affect the potential change of the first light-shielding film 11a. Further, the capacitance line 3 b is also connected to a constant potential source and is set to a constant potential, and can function well as a second storage capacitor electrode of the storage capacitor 70. In this case, as the constant potential source,
A constant potential source such as a negative power supply or a positive power supply supplied to peripheral circuits (for example, a scanning line driving circuit, a data line driving circuit, etc.) for driving the liquid crystal device, a ground power supply, and a constant power supply supplied to the counter electrode 21. And a potential source. By using a power source such as a peripheral circuit, the first light-shielding film 11a and the capacitor line 3b can be set at a constant potential without providing a dedicated potential wiring or an external input terminal.

In this embodiment, the capacitance line 3b and the scanning line 3a are made of the same polysilicon film, and the dielectric film of the storage capacitor 70 and the gate insulating film 2 of the pixel switching TFT 30 are the same. The first storage capacitor electrode 1f, the channel forming region 1a ', the source region 1d, the drain region 1e, etc. of the pixel switching TFT 30 are formed of the same semiconductor layer 1a. For this reason,
The layered structure formed on the TFT array substrate 10 can be simplified, and furthermore, in the method of manufacturing a liquid crystal device described later, the capacitor line 3b and the scanning line 3a can be formed simultaneously in the same thin film forming step. The body film and the gate insulating film 2 can be formed simultaneously.

Further, the contact hole 13 is opened below the data line 6a when viewed from the counter substrate 20 side. Therefore, the contact hole 13 is out of the opening area of the pixel portion, and furthermore, the pixel switching TFT
30 and the first storage capacitor electrode 1f are provided in the portion of the first interlayer insulating film 12 where the first storage capacitor electrode 1f is not formed. Therefore, the TFT 30 and other wiring and the like are formed by forming the contact hole 13 while effectively utilizing the pixel region. Deterioration can be prevented.

As described above, the liquid crystal device of the present embodiment can display a high-definition image while increasing the effective aperture ratio of each pixel using a relatively simple structure.

(Method of Manufacturing Micro Lens) Next, a method of manufacturing the micro lens 500 used in the present embodiment will be described with reference to FIG.

First, as shown in FIG. 5A, a photosensitive resin 510 is applied on a substrate 10 made of neoceram or the like.

Next, as shown in FIG. 5B, the photosensitive resin 510 is mask-exposed through a mask 520 having a predetermined pattern so that a convex portion corresponding to each microlens 500 remains. Thereafter, as shown in FIG. 5C, development is performed by wet or dry etching.

Next, as shown in FIG. 5D, a heat flow is applied, and the photosensitive resin 510 is made of a photosensitive resin 510 having a smooth convex surface of each microlens due to thermal deformation and surface tension of the photosensitive resin 510. A plurality of microlenses 500 as shown in FIGS. 2 and 3 are formed. At this time, in particular, by controlling the heat flow on the substrate surface, the plurality of microlenses 500 are formed so as to have a predetermined light-collecting ability and hardly leave a gap.

Next, as shown in FIG. 5E, an acrylic adhesive 501 is applied to the surface of the microlens 500, and a cover glass 502g made of neoceram or the like is adhered.

Next, as shown in FIG. 5F, the cover glass 502g is polished to obtain a cover glass 502 having a predetermined thickness as shown in FIG.

Finally, as shown in FIG. 5G, a second light-shielding film 23 and a counter electrode 21 are formed in this order by sputtering, coating, or the like, and the microlens 500 and the second light-shielding film as shown in FIG. Counter substrate 2 provided with film 23
Complete 0.

The microlens 500 may be formed by, for example, a known manufacturing method disclosed in JP-A-6-194502 or a traditional so-called “thermal deformation method”.

(Various Modifications of Liquid Crystal Device) Next, various modifications of the above-described liquid crystal device will be described with reference to FIGS.

First, the micro lens 50 shown in FIG.
For 0, it may be configured as shown in FIG. That is, a transparent plate (microlens array) on which the convex surface of each lens is formed in advance may be attached to the surface of the opposing substrate 20 to form the opposing substrate 20 with the microlenses 500 '. Further, such a microlens array may be attached on the surface of the opposite substrate 20 facing the liquid crystal layer 50.

Second, the light-shielding region defined at least partially from the first light-shielding film 11a on the TFT array substrate 10 has various forms as shown in FIGS. 7A to 7C. It is possible to

First, as shown in FIG. 7A, the light-shielding region may be defined solely by the mesh-like first light-shielding film 11a 'indicated by the diagonally downward slanted lines.

Alternatively, as shown in FIG.
As shown in (B), the first light-shielding film 11 in the form of stripes extending in the left-right direction (direction along the scanning line) indicated by the diagonal line inclined downward and to the right.
The light-shielding area may be defined by the light-shielding data line 6a extending in the vertical direction indicated by the oblique line rising to the right.

Alternatively, as shown in FIG. 7 (C), a stripe-shaped first light-shielding film 11a ″ extending in the vertical direction (direction along the data line) indicated by a downward-sloping oblique line and an obliquely upward-sloping line. Light-shielding scanning line 3a ″ and capacitor line 3 extending in the left-right direction
The light-shielding area may be defined by at least one of the light-shielding wirings of b ”. In this case, the material of the light-shielding wiring may be Al as in the case of the data line 6a in the above-described embodiment. A metal film having excellent light-shielding properties and conductivity, such as a film, may be used.

In any of the embodiments shown in FIGS. 7A to 7C, a light-shielding region can be defined around the pixel opening region.

Third, the shape of the second light-shielding film 23 on the counter substrate 20 can be various shapes as shown in FIGS. 8A to 8C.

First, as shown in FIG. 2, FIG.
As shown in (2), the mesh-shaped second light-shielding film 23 may be formed in an area indicated by obliquely rising oblique lines that is two-dimensionally covered by a light-shielding area indicated by obliquely downwardly-sloping lines.

Alternatively, as shown in FIG. 8 (B), an area shown by a diagonally right-upward oblique line covered by a light-shielding area shown by a diagonally right-down diagonal line extends along the scanning line (in the horizontal direction in the figure). (2) A second stripe-shaped light-shielding film 23 ′ that extends may be formed.

Alternatively, as shown in FIG. 8C, each pixel is divided along a scanning line into a region shown by a diagonally right-upward obliquely covered by a light-shielding region shown by a diagonally right-down diagonal line. An island-shaped second light-shielding film 23 "may be formed.

8A to 8C, the strength of the opposing substrate 20 can be increased and the heat incidence on the liquid crystal layer can be reduced.

(Overall Configuration of Liquid Crystal Device) The overall configuration of each embodiment of the liquid crystal device configured as described above will be described with reference to FIGS. FIG. 9 is a block diagram showing a specific configuration of a pixel portion and a peripheral circuit on the TFT array substrate. FIG. 10 is a plan view of the TFT array substrate 10 together with the components formed thereon as viewed from the counter substrate 20 side. FIG. It is sectional drawing.

In FIG. 9, the liquid crystal device has a data line driving circuit 101 for driving data line 6a as a peripheral circuit.
A scanning line driving circuit 104 for driving the scanning line 3a; a precharge circuit 201 for supplying a precharge signal NRS of a predetermined voltage level to the plurality of data lines 6a prior to the image signal VID; A sampling circuit 301 for sampling and supplying the data to the plurality of data lines 6a.

The scanning line driving circuit 104 supplies the scanning signals G1, G2, G2,... To the scanning line 3a at a predetermined timing based on the power supplied from the external control circuit, the reference clock signal CLY and its inverted clock signal, the start signal DY, and the like. …, G
m is applied in a pulsed manner in a line-sequential manner.

The data line driving circuit 101 is configured such that the scanning line driving circuit 104 causes the scanning signals G1, G2,... Based on the power supplied from the external control circuit, the reference clock signal CLX and its inverted clock signal, the start signal DX and the like. , Gm are applied to the image signal lines 304, and the sampling circuit drive signals X1, X2,..., Xn are supplied to the sampling circuit 301 for each data line 6a at a predetermined timing via the sampling circuit drive signal line 306. Supply.

The precharge circuit 201 includes, for example, a TFT 202 as a switching element for each data line 6a.
, And a precharge circuit drive signal line 206 is connected to the gate electrode of the TFT 202. In operation, power of a predetermined voltage required for writing the precharge signal NRS is supplied from an external power supply via the precharge signal line 204, and each data line 6a is supplied via the precharge circuit drive signal line 206. From the external control circuit so as to write the precharge signal NRS at a timing preceding the image signals S1, S2,.
RG is supplied. The precharge circuit 201 preferably supplies a precharge signal NRS (image auxiliary signal) corresponding to the image signals S1, S2,.

The sampling circuit 301 includes a TFT 302
Is provided for each data line 6a, the image signal line 304 is connected to the source electrode of the TFT 302, and the sampling circuit drive signal line 306 is connected to the gate electrode of the TFT 302. Then, when the image signal VID is input via the image signal line 304, the image signal VID is sampled.

As described above, in the present embodiment, data line 6
Although the configuration is such that a is selected one by one, the configuration may be such that the data lines 6a are collectively selected for a plurality of lines at the same time. For example, the image signal VID expanded into a plurality of phases (for example, three phases, six phases, twelve phases,...) In accordance with the write characteristics of the TFT 302 constituting the sampling circuit 301 and the frequency of the image signal is output to the image signal line 304. , And may be configured to sample them simultaneously for each group. At this time, it is needless to say that the image signal lines 304 are required at least for the number of phase developments.

In FIG. 10, a sealing material 52 is provided along the edge of the TFT array substrate 10, and is made of, for example, the same or different material as the second light shielding film 23 in parallel with the inside thereof. A third light-shielding film 53 is provided as a peripheral parting. The data line drive circuit 101 and the mounting terminal 102
The scanning line drive circuit 104 is provided along one side of the T array substrate 10 and is provided along two sides adjacent to the one side. If the delay of the scanning signal supplied to the scanning line 3a does not matter, it goes without saying that the scanning line driving circuit 104 may be provided on only one side. Further, the data line driving circuits 101 may be arranged on both sides along the side of the image display area. For example, the odd-numbered data lines 6a supply image signals from a data line driving circuit arranged along one side of the image display area, and the even-numbered data lines extend along the opposite side of the image display area. The image signal may be supplied from a data line driving circuit disposed in the same manner. If the data lines 6a are driven in a comb-tooth shape in this manner, the area occupied by the data line driving circuit can be expanded, so that a complicated circuit can be formed. Further, on one remaining side of the TFT array substrate 10, a plurality of wirings 1 for connecting between the scanning line driving circuits 104 provided on both sides of the image display area are provided.
05 as well as a third
The precharge circuit 201 may be provided hidden under the light shielding film 53. In at least one of the corners of the opposing substrate 20, the TFT array substrate 10
A conductive material 106 for providing electrical continuity between the substrate and the counter substrate 20 is provided. Then, as shown in FIG. 11, the opposite substrate 20 having substantially the same contour as the sealing material 52 shown in FIG. 10 is fixed to the TFT array substrate 10 by the sealing material 52.

The TFT array substrate 10 of the liquid crystal device according to each of the embodiments described above with reference to FIGS. 1 to 11 is further inspected for quality, defects, and the like of the liquid crystal device during manufacturing or shipping. May be formed. Further, the data line driving circuit 101 and the scanning line driving circuit 104
Is provided on the TFT array substrate 10, for example, via a drive LSI mounted on a TAB (tape automated bonding substrate) via an anisotropic conductive film provided on the periphery of the TFT array substrate 10. The connection may be made electrically and mechanically. Also, the side of the opposite substrate 20 on which the projected light is incident and the TFT array substrate 10
For example, a TN (twisted nematic) mode, STN (super TN)
A polarizing film, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction according to an operation mode such as a D-STN (double-STN) mode or a normally white mode / a normally black mode.

Since the liquid crystal device in each of the embodiments described above is applied to a color liquid crystal projector, three liquid crystal devices are used as RGB light valves, and each liquid crystal device has an RGB color separation device. The light of each color decomposed via the dichroic mirror is incident as projection light. Therefore, in each embodiment,
No color filter is provided on the opposing substrate 20.
However, an RGB color filter may be formed on the opposing substrate 20 in a predetermined area facing the pixel electrode 9a where the second light-shielding film 23 is not formed, together with the protective film. In this way, the liquid crystal device according to each embodiment can be applied to a color liquid crystal device such as a direct-view or reflection type color liquid crystal television other than the liquid crystal projector. Furthermore,
By depositing a number of interference layers having different refractive indices on the counter substrate 20, a dichroic filter that creates RGB colors using light interference may be formed. According to the counter substrate with the dichroic filter, a brighter color liquid crystal device can be realized.

Conventionally, in order to prevent reflection on the back surface side of the TFT array substrate 10, it has been necessary to separately arrange a polarizing plate coated with an anti-reflection AR coating or attach an AR film. However, in each embodiment, the first light-shielding film 11a is formed between the surface of the TFT array substrate 10 and at least the channel region 1a 'and the LDD regions 1b and 1c of the semiconductor layer 1a. It is not necessary to use a coated polarizing plate or AR film, or use a substrate obtained by subjecting the TFT array substrate 10 itself to an AR process. Therefore, according to each of the embodiments, the material cost can be reduced, and the yield is not significantly reduced due to dust, scratches or the like at the time of attaching the polarizing plate, which is very advantageous. In addition, since light resistance is excellent, even if a bright light source is used or polarization conversion is performed by a polarizing beam splitter to improve light use efficiency, image quality deterioration such as crosstalk due to light does not occur.

The switching element provided in each pixel is described as a normal stagger type or coplanar type polysilicon TFT.
The embodiments are also effective for other types of TFTs such as TFTs and amorphous silicon TFTs.

Further, the light-collecting ability of the microlens 500 is sufficient if the light-collecting area 500b (see FIG. 2) can be focused to just fit in the opening area, and the light-collecting area 500b is made smaller than necessary. No need. Further, since the effective aperture ratio in each pixel is increased by the microlens 500, in order to increase the pixel aperture area,
The line width and TF of the scanning line 3a, the capacitance line 3b and the data line 6a
It is not necessary to reduce the planar size of T30 more than necessary. Therefore, this embodiment is very suitable for a case where the pixel pitch is reduced and each pixel is miniaturized.

In this embodiment, the pixel electrode 9a is driven by using a TFT. However, an active matrix element such as a TFD (Thin Film Diode) other than the TFT is used. It is also possible to configure the liquid crystal device as a passive matrix type liquid crystal device. Even in such a case, as long as the configuration in which light is condensed on the pixel electrode by the microlens is employed, it is as effective as in the present embodiment in improving the light use efficiency. The present embodiment is effective not only for liquid crystal devices but also for various electro-optical devices, for example, electro-optical devices such as electroluminescence and plasma display.

FIG. 12 illustrates the configuration of a liquid crystal projector as an application example using the present embodiment. The liquid crystal projector 1100 is configured as a projector that prepares three liquid crystal modules including the liquid crystal device as the above-described electro-optical device and uses them as the light valves 100R, 100G, and 100B for RGB. In the liquid crystal projector 1100, when projection light is emitted from a lamp unit 1102 of a white light source such as a metal halide lamp, three mirrors 1106 and two dichroic mirrors 1108 cause light components R, G, B, and are led to light valves 100R, 100G, and 100B corresponding to each color. At this time, in particular, the B light is guided through a relay lens system 1121 including an entrance lens 1122, a relay lens 1123, and an exit lens 1124 in order to prevent light loss due to a long optical path. Then, light components corresponding to the three primary colors modulated by the light valves 100R, 100G, and 100B, respectively, are recombined by the dichroic prism 1112, and then are transmitted through the projection lens 1114 to the screen 112.
0 is projected as a color image.

In this embodiment, in particular, since the light-shielding film is also provided below the TFT, the reflected light and the projected light by the projection optical system in the liquid crystal projector based on the light projected from the liquid crystal device 100 pass through. The reflected light from the surface of the liquid crystal device substrate, the part of the projected light that passes through the dichroic prism 1112 after being emitted from another liquid crystal device, etc., is incident on the liquid crystal device substrate side as return light. Also, it is possible to sufficiently shield a channel region such as a switching TFT of a pixel electrode from light. For this reason,
Even if a prism suitable for miniaturization is used in the projection optical system, an AR (anti-reflection) for preventing return light is provided between the liquid crystal device substrate and the prism of each liquid crystal device.
Since there is no need to attach a film or apply an AR coating treatment to the polarizing plate, it is very advantageous in reducing the size and simplifying the configuration.

Furthermore, in this embodiment, since the return light to the channel region can be prevented by the light-shielding film, the polarizing plate which has been subjected to the return light prevention processing is not directly attached to the liquid crystal device, and the polarizing plate is removed from the liquid crystal device. It may be formed apart.
More specifically, one polarizing plate (not shown) can be attached to dichroic prism 1112. By attaching the polarizing plate to the prism unit in this manner, the heat of the polarizing plate is absorbed by the prism unit or the lens, so that a rise in the temperature of the liquid crystal device can be prevented. In addition, in such a configuration, since the liquid crystal device and the polarizing plate can be formed separately, an air layer is formed between the liquid crystal device and the polarizing plate. Therefore, a cooling means (not shown) is provided on one of the upper side and the lower side of the prism unit, and a cooling air or the like is sent between the liquid crystal device and the polarizing means from the cooling means to further prevent the temperature of the liquid crystal device from rising. Accordingly, a malfunction due to a temperature rise of the liquid crystal device can be prevented.

[0113]

As described above in detail, according to the electro-optical device of the present invention, it is possible to display a high-definition image while increasing the effective aperture ratio in each pixel by using a relatively simple structure. In addition, it is possible to increase the strength of the second substrate (opposite substrate), and it is also possible to prolong the life of the electro-optical material by suppressing heat incident on the electro-optical material due to incident light. .

[Brief description of the drawings]

FIG. 1 is an equivalent circuit of various elements, wiring, and the like provided in a plurality of pixels in a matrix forming an image display area in an embodiment of the liquid crystal device of the present invention.

FIG. 2 is a plan view of a TFT array substrate according to an embodiment of the liquid crystal device, together with components formed thereon, viewed from a counter substrate side.

FIG. 3 is a schematic diagram illustrating a state in which incident light is collected by a microlens provided on a counter substrate.

FIG. 4 is an enlarged sectional view of a TFT array substrate portion relating to one TFT in FIG. 3;

FIG. 5 is a process chart sequentially showing a method of manufacturing the microlens shown in FIG. 3;

FIG. 6 is an enlarged cross-sectional view of a counter substrate in a pixel portion where another example of a microlens according to the present embodiment is formed.

FIG. 7 is a plan view showing various forms of a light shielding region in the present embodiment.

FIG. 8 is a plan view showing various forms of a second light shielding film in the present embodiment.

FIG. 9 is a block diagram of a pixel portion and peripheral circuits provided on a TFT array substrate in the embodiment of the liquid crystal device.

FIG. 10 is a plan view of a TFT array substrate in each embodiment of the liquid crystal device together with components formed thereon viewed from a counter substrate side.

11 is a sectional view taken along the line H-H 'of FIG.

FIG. 12 is a configuration diagram of a liquid crystal projector which is an example of an electronic apparatus using the liquid crystal device of the present embodiment.

[Explanation of symbols]

 1a Semiconductor layer 1a 'Channel region 1b Low-concentration source region (source-side LDD region) 1c Low-concentration drain region (drain-side LDD region) 1d High-concentration source region 1e High-concentration drain region 1f First accumulation Capacitance electrode 2 ... Gate insulating film 3a ... Scan line (gate electrode) 3b ... Capacitance line (second storage capacitor electrode) 4 ... Second interlayer insulating film 5 ... Contact hole 6a ... Data line (source electrode) 7 ... Third interlayer Insulating film 8 Contact hole 9a Pixel electrode 10 TFT array substrate 11a First light shielding film 12 First interlayer insulating film 13 Contact hole 16 Alignment film 20 Counter substrate 21 Counter electrode 22 Alignment film 23 Second light shielding film 30: TFT for pixel switching 50: Liquid crystal layer 52: Sealing material 53: Third light shielding film 70: Storage capacitor 101: Data line driving circuit 104: scanning line drive circuit 201: precharge circuit 301: sampling circuit 500: microlens 501: adhesive 502: cover glass

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H092 GA17 GA18 GA21 GA25 GA30 JA24 JA25 JA26 JA29 JA30 JB52 JB54 JB62 JB66 NA07 NA12 PA01 PA07 PA08 RA05 5C094 AA05 AA10 AA16 AA33 AA48 AA49 AA54 BA03 BA16 BA43 CA19 EA14 DA13 EA06 ED01 ED11 ED15 FA01 FA02 FB12 5G435 AA03 AA12 AA14 AA16 BB12 BB16 BB17 CC09 CC12 DD02 DD06 DD12 DD13 EE12 EE22 FF02 FF07 FF13 GG02 GG28 HH02 HH05 HH12 HH13 HH14 KK05 KK07

Claims (13)

[Claims] An electro-optical material is sandwiched between a pair of first and second substrates, and a plurality of pixel electrodes arranged in a matrix on the first substrate, and the plurality of pixel electrodes are respectively arranged. A plurality of thin film transistors to be driven, a plurality of data lines and a plurality of scanning lines respectively connected to the plurality of thin film transistors and intersecting with each other, and at least a channel region of the plurality of thin film transistors as viewed from the first substrate side. A first light-shielding film formed at a position to cover the plurality of pixel electrodes, the plurality of light-shielding films being arranged on the second substrate in such a manner that light incident from the side of the second substrate is focused on the plurality of pixel electrodes, respectively. Microlenses and second microlenses formed at positions facing respective boundaries of the plurality of microlenses.
A light-shielding film, wherein the first light-shielding film at least partially defines, on the first substrate, a light-shielding region that mutually partitions a plurality of pixel opening regions respectively corresponding to the plurality of pixel electrodes; An electro-optical device, wherein the light-shielding film is covered by the light-shielding region when viewed from the first substrate side. 2. The electro-optical device according to claim 1, wherein the first light-shielding film is formed in a mesh shape, and defines the light-shielding region independently. 3. The data line includes a light-shielding and conductive thin film, and defines a region along the data line in the light-shielding region. 2. The electro-optical device according to claim 1, wherein the electro-optical device is formed in a stripe shape along each of the scanning lines, and defines a region along the scanning line in the light-shielding region. 3. 4. The scanning line is formed of a light-shielding and conductive thin film, and defines a region along the scanning line in the light-shielding region. 2. The electro-optical device according to claim 1, wherein the electro-optical device is formed in a stripe shape along each of the data lines, and defines a region along the data line in the light-shielding region. 3. 5. The light-shielding and conductive thin film comprises a metal or metal alloy thin film.
Or the electro-optical device according to 4. 6. A plurality of capacitor lines, each of which provides a predetermined storage capacitance to the pixel electrode, in parallel with the scanning line on the first substrate, wherein the plurality of capacitor lines are provided on the first substrate. The electro-optical device according to claim 1, wherein the electro-optical device is located in the light blocking area. 7. The electro-optical device according to claim 1, wherein the second light-shielding film is formed in a mesh shape along each of the boundaries of the plurality of microlenses. apparatus. 8. The method according to claim 1, wherein the second light-shielding film is formed in a stripe shape along each of boundaries of the plurality of microlenses in a direction along the scanning line. The electro-optical device according to any one of claims 6 to 13. 9. The method according to claim 1, wherein the second light-shielding film is formed in an island shape along each of the boundaries of the plurality of microlenses in a direction along the scanning line. The electro-optical device according to any one of claims 6 to 13. 10. The light-shielding region according to claim 1, wherein the light-shielding region is defined in accordance with the light-collecting angle of the microlens so as not to protrude into the light-collecting region of the microlens on the pixel electrode. 10. The electro-optical device according to any one of items 1 to 9. 11. The first light-shielding film is made of Ti, Cr, W,
The electro-optical device according to any one of claims 1 to 10, further comprising at least one of Ta, Mo, and Pd. 12. The electro-optical device according to claim 1, wherein the second light-shielding film is formed of a metal or a metal alloy thin film. 13. A projection display device comprising the electro-optical device according to claim 1, wherein the light source and the light emitted from the light source are condensed. A projection display device comprising: a condensing optical system for leading to an electro-optical device; and an enlarged projection optical system for enlarging and projecting light modulated by the electro-optical device onto a projection surface.