JP2000003902A - Device and method for removing particles in semiconductor manufacturing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently prevent the particles from adhering to a substrate. SOLUTION: In a semiconductor manufacturing device processing a substrate 3000 by impressing a gas with voltage for making the gas plasmatic, the particles positively charged in a processing chamber 2100 are trapped or induced by an electrode 15, a grid 13 and a cover 3600, etc., supplied with a negative a potential as soon as a cathode voltage supply is stopped so as to prevent the particles from arriving at the substrate 3000.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a particle removing apparatus and a particle removing method for a semiconductor manufacturing apparatus, and more particularly to a particle removing apparatus for a semiconductor manufacturing apparatus which prevents particles generated during a process from falling onto a wafer. And a method for removing particles.

[0002]

2. Description of the Related Art Particles generated in an LSI manufacturing process, particularly in a process using plasma, are a major factor in lowering the yield and the operating rate of an apparatus. Particles are generated when reaction products attached to the process apparatus are peeled off or reaction products grow in plasma. In order to prevent such particles from dropping on the substrate, Japanese Patent Application Laid-Open No. 5-29272 and Japanese Patent Application Laid-Open No.
As described in Japanese Patent Application Publication No. 3 (1993), an apparatus has been proposed in which a cover for covering a substrate after a process is mounted. FIG.
FIG. 9A is a diagram showing a conventional plasma etching apparatus. In FIG. 9, reference numeral 2100 denotes a processing chamber, in which an upper processing electrode 2200 and a lower processing electrode 2300 are provided. The upper electrode 2200 for processing is grounded, and the lower electrode 2300 for processing is
400 are connected.

The insulator 1 is provided on the lower electrode 2300.
Electrostatic chuck electrode 270 insulated by 900
0 is provided to the electrostatic chuck electrode 2700.
The semiconductor substrate 3000 is fixed by applying a voltage from 600. The processing chamber 2100 is provided with a gas inlet 3100 and a gas outlet 3200. Further, a cover 3600 is provided so that particles do not adhere to the semiconductor substrate 3000.

FIG. 9 shows a general operation cycle of a device in a plasma etching process in a semiconductor manufacturing process.
(B). This represents a cycle for processing one substrate. When the substrate 3000 is transferred into the processing chamber 2100 from the transfer port 3800, the process gas is introduced into the introduction port 31.
When the pressure in the processing chamber 2100 reaches a specified value, a high frequency voltage is applied from the power supply 2400 to generate plasma and etch the substrate 3000. At the same time, the substrate 3000 is fixed by the electrostatic chuck. After the completion of the etching, the high-frequency voltage, the supply of the process gas, and the electrostatic chuck are simultaneously stopped. After a few seconds, an inert gas that does not contribute to the etching is supplied as a purge gas for a certain period of time for the purpose of quickly discharging the process gas. The processed substrate 3000 is transferred from the transfer port 3800 to the processing chamber 21.
It is transported outside 00.

[0005] In the above-described conventional apparatus, a cover 3600 is provided on the substrate 3000 in order to prevent particles from adhering to the substrate 3000. In the semiconductor manufacturing process, it has been found that the timing at which particles fall on the substrate is closely related to the operating state of the semiconductor manufacturing apparatus. In other words, the above-described conventional device does not consider the timing of covering the substrate 3000 at all, and has a serious disadvantage that particles cannot be sufficiently prevented from adhering to the substrate.

[0006]

SUMMARY OF THE INVENTION An object of the present invention is to improve the above-mentioned drawbacks of the prior art, and in particular, to control a cover provided on a substrate in a timely manner in accordance with the processing state of the substrate to thereby generate plasma. An object of the present invention is to provide a novel particle removing apparatus and a method for removing particles in a semiconductor manufacturing apparatus which prevent particles generated in a semiconductor device used from adhering to a substrate. Another object of the present invention is to provide a particle removing apparatus for a novel semiconductor manufacturing apparatus that prevents particles from adhering to a substrate without using a cover or the like by utilizing the feature that particles are positively charged. And a method for removing particles.

[0007]

SUMMARY OF THE INVENTION The present invention basically employs the following technical configuration to achieve the above object. That is, the first aspect of the particle removal apparatus of the semiconductor manufacturing apparatus according to the present invention is to process a substrate in the processing chamber by applying a high-frequency voltage between the upper electrode and the lower electrode to convert the processing chamber into plasma, In a semiconductor manufacturing apparatus provided with a cover that covers the substrate and covering the substrate by closing the cover to prevent particles in a processing chamber from adhering to the substrate, a drive timing of the cover is controlled. 1
Is provided, the control means controls the cover from the open state to the closed state immediately before stopping the application of the high-frequency voltage,

In a second aspect, the cover is controlled from a closed state to an open state in synchronization with a transfer operation of a substrate transfer device provided in the semiconductor manufacturing apparatus. The third mode is characterized in that the timing of controlling the cover from the closed state to the open state is immediately before the processed substrate is conveyed out of the processing chamber, and the fourth mode. The timing of controlling the cover from the closed state to the open state is characterized in that it is immediately after the processed substrate is transported outside the processing chamber,

According to a fifth aspect, the timing for controlling the cover from the closed state to the open state is immediately before the application of the high-frequency voltage.
In a preferred embodiment, a second control means for applying a potential to the cover and controlling a timing for applying the potential to the cover is provided. Characterized by controlling to apply a potential to the cover for seconds,

A seventh aspect is characterized in that the potential is applied at least until immediately before the introduction of a purge gas, and an eighth aspect is that the potential is applied to a substrate after processing is completed. In the ninth aspect, the potential is equal to or the same as the self-bias potential appearing on the lower electrode of the processing electrode. The absolute value is a potential higher than the self-bias potential, and the tenth aspect is that the potential is equivalent to the potential of the lower electrode of the processing electrode. It is assumed that.

According to a first aspect of the method of removing particles of a semiconductor manufacturing apparatus according to the present invention, a substrate is processed by applying a high-frequency voltage to generate plasma in a processing chamber, and a cover for covering the substrate is provided. In a semiconductor manufacturing apparatus in which the cover is closed to cover the substrate and prevent particles from adhering to the substrate, the cover is controlled from an open state to a closed state immediately before stopping the application of the high-frequency voltage. Is characterized in that

In a second aspect, the cover is controlled from a closed state to an open state in synchronization with a transfer operation of a substrate transfer device provided in the semiconductor manufacturing apparatus. In a third mode, a substrate is processed by applying a high-frequency voltage to generate plasma in a processing chamber, and a cover for covering the substrate is provided. When the cover is closed, the substrate is covered. In the semiconductor manufacturing apparatus, wherein the cover is prevented from adhering to the substrate, a first step of closing the cover from an open state to a closed state, and a second step of stopping the application of the high-frequency voltage immediately after the cover is closed. A third step of applying a potential to the cover;
It is characterized by including.

[0013] An eleventh aspect of the particle removing apparatus of the semiconductor manufacturing apparatus according to the present invention is characterized in that an etching processing chamber, a pair of processing electrodes including an upper electrode and a lower electrode installed in the processing chamber are processed. And a susceptor for fixing the substrate on the lower electrode, a process gas is introduced into the etching processing chamber, and a predetermined voltage is applied to the processing electrode to form a plasma to process the substrate on the susceptor. In the semiconductor manufacturing apparatus, a particle removing electrode for removing particles is provided in the processing chamber,
By applying a negative voltage to this electrode, it is characterized by removing charged particles in the processing chamber,

A twelfth aspect is characterized in that the particle removing electrode is provided between the upper electrode and the lower electrode, and a thirteenth aspect is provided with the particle removing electrode. An exhaust port is provided on a side wall of the etching processing chamber in the vicinity, and a fourteenth aspect is characterized in that the particle removing electrode includes the lower electrode so as to surround the substrate. Characterized by being provided above,

A fifteenth aspect is characterized in that the particle removing electrode is provided between the processing electrode and a wall surface of the processing chamber, and a sixteenth aspect is that the particle removing electrode is provided. Is a deposition-preventing plate for preventing deposition of deposits on the processing chamber wall surface. In a seventeenth aspect, the particle removing electrode comprises:
It is characterized by being provided in the gas exhaust port of the etching processing chamber or in the vicinity of the gas exhaust port,

In an eighteenth aspect, an etching chamber is provided;
A pair of processing electrodes consisting of an upper electrode and a lower electrode installed in the processing chamber, and a susceptor for fixing a substrate to be processed on the lower electrode, and introducing a process gas into the etching processing chamber; In a semiconductor manufacturing apparatus for processing a substrate on the susceptor by applying a predetermined voltage to a processing electrode to form a plasma, a gas exhaust port of the processing chamber is formed of a conductive member, and a negative voltage is applied to the conductive member. Is applied to remove charged particles in the processing chamber,

In a nineteenth aspect, an etching chamber is provided,
A pair of processing electrodes consisting of an upper electrode and a lower electrode installed in the processing chamber, and a susceptor for fixing a substrate to be processed on the lower electrode, and introducing a process gas into the etching processing chamber; In a semiconductor manufacturing apparatus for processing a substrate on the susceptor by applying a predetermined voltage to a processing electrode to form a plasma, a grid member having conductivity for removing particles is provided between the upper electrode portion and the lower electrode. By applying a negative voltage to the lattice member, to remove charged particles in the processing chamber,

In a twentieth aspect, an etching chamber is provided.
A pair of processing electrodes consisting of an upper electrode and a lower electrode installed in the processing chamber, and a susceptor for fixing a substrate to be processed on the lower electrode, and introducing a process gas into the etching processing chamber; In a semiconductor manufacturing apparatus for processing a substrate on the susceptor by applying a predetermined voltage to a processing electrode, a particle removing electrode for removing particles is provided around the substrate, and the lower part of the electrode is provided on the electrode. By applying a negative voltage having an absolute value larger than the self-bias voltage of the electrode, particles in the processing chamber are prevented from falling onto the substrate,

In a twenty-first aspect, an etching chamber and
A pair of processing electrodes consisting of an upper electrode and a lower electrode installed in the processing chamber, and a susceptor for fixing a substrate to be processed on the lower electrode, and introducing a process gas into the etching processing chamber; In a semiconductor manufacturing apparatus for processing a substrate on the susceptor by applying a predetermined voltage to a processing electrode, a negative constant bias is applied to a voltage applied to the lower electrode, and a self-bias voltage and In the same manner, the charged particles are directed to the lower electrode, wherein the particles are prevented from falling on the substrate,

According to a twenty-second aspect, a laser device for detecting the generation of the particles is provided, and a laser beam of the laser device is irradiated on the vicinity of the upper electrode to detect the generation of the particles in the processing chamber. And a third control unit for applying a negative voltage to the particle removing electrode based on the detection result is provided.

In a twenty-third aspect, the particle removing electrode is formed of a conductive plate. In a twenty-fourth aspect, the particle removing electrode has conductivity. According to a twenty-fifth aspect, the negative electrode is a grid-shaped electrode, and the negative voltage is applied after the end of etching. The negative voltage is applied during the transfer of the substrate.

In a fourth aspect of the method for removing particles of a semiconductor manufacturing apparatus according to the present invention, an etching processing chamber,
A pair of processing electrodes consisting of an upper electrode and a lower electrode installed in the processing chamber, and a susceptor for fixing a substrate to be processed on the lower electrode, and introducing a process gas into the etching processing chamber; In a semiconductor manufacturing apparatus for processing a substrate on the susceptor by applying a predetermined voltage to a processing electrode, a particle removing electrode for removing particles is provided in the processing chamber, and after the substrate is etched, the particles are removed. By applying a negative voltage to the removal electrode, the charged particles in the processing chamber are guided to the particle removal electrode, or adhered to the particle removal electrode, thereby preventing particles from adhering to the substrate. And

According to a fifth aspect, a negative voltage is applied to the particle removing electrode, and then the etching gas in the processing chamber is exhausted. A pair of processing electrodes consisting of an upper electrode and a lower electrode installed in the processing chamber, and a susceptor for fixing a substrate to be processed on the lower electrode, introducing a process gas into the etching processing chamber,
By applying a predetermined voltage to the processing electrode, in a semiconductor manufacturing apparatus for processing a substrate on the susceptor by forming a plasma, a particle removing electrode is provided in or near a gas exhaust port of the processing chamber. By applying a negative voltage to the electrode, while guiding the charged particles in the direction of the gas exhaust port, it is characterized by exhausting the etching gas in the processing chamber,

According to a seventh aspect, an etching processing chamber, a pair of processing electrodes including an upper electrode and a lower electrode installed in the processing chamber, and a susceptor for fixing a substrate to be processed on the lower electrode are provided. In a semiconductor manufacturing apparatus for introducing a process gas into the etching processing chamber and applying a predetermined voltage to the processing electrode to generate a plasma and process the substrate on the susceptor, a gas exhaust port of the processing chamber is provided. Is formed of a conductive member, and by applying a negative voltage to the exhaust port, the charged particles are guided toward the gas exhaust port, and simultaneously, the etching gas in the processing chamber is exhausted. Yes,

According to an eighth aspect, there is provided an etching processing chamber, a pair of processing electrodes including an upper electrode and a lower electrode installed in the processing chamber, and a susceptor for fixing a substrate to be processed on the lower electrode. In a semiconductor manufacturing apparatus for introducing a process gas into the etching chamber and applying a predetermined voltage to the processing electrode to generate a plasma and process the substrate on the susceptor, the magnitude of the generated plasma By protruding larger than the substrate,
Particles in the treatment room are caused to fall along a peripheral portion of the plasma to prevent particles from adhering to the substrate.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A particle removing apparatus of a semiconductor manufacturing apparatus according to the present invention processes a substrate in a processing chamber by applying a high-frequency voltage between an upper electrode and a lower electrode to convert the processing chamber into plasma. Providing a cover that covers the substrate, and controlling the drive timing of the cover in a semiconductor manufacturing apparatus that covers the substrate by closing the cover and prevents particles in a processing chamber from adhering to the substrate. A first control unit, wherein the control unit controls the cover from an open state to a closed state immediately before stopping the application of the high-frequency voltage; The cover is controlled from the closed state to the open state in synchronization with the transport operation of the transported substrate transport device. Therefore, the cover is driven just before the particles are generated to cover the substrate, so that the particles are effectively prevented from adhering to the substrate. Further, by applying an appropriate potential to the cover, the cover has a dust collecting action, so that the particles can be more effectively prevented from adhering to the substrate.

Next, another embodiment of the present invention will be described. FIG. 21 shows a photograph in which the behavior of particles in plasma is captured in a schematic diagram of the apparatus. The right end of this figure corresponds to the vicinity of the center of the process equipment,
The left end corresponds to the vicinity of the wall of the process device. Particles are trapped in the sheath region near the upper electrode in FIG. 21 and, at the moment when the plasma is cut off, feel the potential of the afterglow plasma, and fly near the upper electrode toward the outer wall. It can be seen that near the center of the plasma, it falls downward along the outside of the plasma, and near the lower electrode, ie, the wafer, it flies toward the wafer by a self-bias voltage having a negative potential.
From these results, the particles are positively charged,
Utilizing this, a method of electrostatically removing particles is the basis of the present invention.

Next, FIG. 9B shows an example of the relationship between the number of particles generated during the operation of the etching apparatus and the operating state of the apparatus at that time. The apparatus shown in FIG. 9A is a conventional etching apparatus provided with a parallel plate type processing electrode. FIG. 9B shows a cycle for processing one substrate. When the substrate is transferred into the processing chamber from the transfer port, a process gas is supplied, and when the pressure in the processing chamber reaches a specified value, a high-frequency voltage is applied to generate plasma and etch the substrate. At this time, the substrate is fixed to the susceptor on the lower processing electrode. After the etching, the high frequency voltage, the process gas, and the electrostatic attraction of the substrate are simultaneously stopped. After a few seconds, an inert gas not contributing to the etching is supplied as a purge gas for a certain period of time for the purpose of quickly discharging the process gas, so that the pressure in the processing chamber increases. The substrate after the processing is transferred out of the processing chamber through the transfer port. In the figure, the number of particles P represented by an ellipse is obtained by irradiating a laser beam into the processing chamber of the etching apparatus to irradiate the space above the substrate, photographing the scattered light from the particles crossing the laser light with a CCD camera, and simultaneously etching This is a result obtained by capturing a signal indicating the operation state of the apparatus, and is an integrated value when 25 substrates are processed.

From FIG. 9B, the generation of the particles P during the etching clearly corresponds to the operation state of the apparatus. That is, almost no particles are generated during the etching, but many particles are generated at the end of the etching at one time, and the frequency of generation of the particles is high when the purge gas is introduced. When the image in which the scattered light from the particles was captured was examined in detail, it was found that the tracks of the particles at the end of the etching tended toward the substrate, and tended toward the exhaust port when the purge gas was introduced. From the above, the particles floating during the etching fall because the high-frequency power supply was stopped at the end of the etching,
It is considered that because of the small viscous flow of the process gas, the process gas flies toward a substrate that has not been completely neutralized. However, several seconds after the end of the etching, the purge gas is introduced, and the particles are considered to head to the exhaust port together with the purge gas.

According to the present invention, a cover is provided on a wafer when the voltage is stopped, or a negative potential is applied to a conductive plate or grid by utilizing the fact that particles in a processing chamber are positively charged. Thus, the generated particles are moved toward the trap or the exhaust port, and are prevented from reaching the substrate.

[0031]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific examples of a semiconductor manufacturing apparatus and a control method thereof according to the present invention will be described in detail with reference to the drawings. FIG. 1A is a diagram showing the structure of a specific example of a semiconductor manufacturing apparatus according to the present invention. In these figures, a high-frequency voltage is applied between an upper electrode 2200 and a lower electrode 2300 to process a chamber 2100. By converting the inside into a plasma, the substrate 300
0 and a cover 3 for covering the substrate 3000
600, and the cover 3600 is closed to cover the substrate 3000, and particles
Semiconductor manufacturing equipment 4000 which is prevented from adhering to
At

A first control means 200 for controlling the drive timing of the cover 3600 is provided.
0 indicates the semiconductor manufacturing apparatus 4000 that controls the cover 3600 from the open state to the closed state just before stopping the application of the high-frequency voltage, and the transfer of the substrate transfer apparatus 1600 provided in the semiconductor manufacturing apparatus 4000. The semiconductor manufacturing apparatus 4000 is characterized in that the cover 3600 is controlled from the closed state to the open state in synchronization with the operation.

FIG. 1B is a block diagram showing the overall structure of the plasma etching apparatus according to the present invention.
600, a driving device 400, an etching gas supply device 1200 for supplying an etching gas into the processing chamber, a purge gas supply device 1300 for supplying a purge gas for discharging the etching gas, and a vacuum adjusting device for adjusting the degree of vacuum in the processing chamber. 1400, a gas discharge device 1500 for discharging gas in a processing chamber, a substrate transfer device 1600 for transferring a substrate, a high-frequency power supply device 240 for plasma generation
0, DC power supply 2 for electrostatic chuck for fixing substrate
The controller 600 is controlled by a control device 1700 such as a microcomputer or a sequencer, so that a predetermined process is performed on the substrate 3000. The first control means 2
00, the second control means 300 is included in the control device 1700. As described above, the configuration of the semiconductor manufacturing apparatus used in the present invention except for the control of the cover 3600 is the same as the conventional configuration.

FIG. 9B shows the relationship between the number of particles P generated during plasma etching and the operating state of the etching apparatus. In the figure, the number of particles P represented by ellipses is obtained by irradiating a laser beam into the processing chamber 2100 of the etching apparatus, irradiating the space above the substrate 3000, and photographing the scattered light of the particles P and the like crossing the laser beam with a CCD camera. Is a result obtained by simultaneously capturing a signal indicating the operating state of the etching apparatus, and is an integrated value when 25 substrates are processed. Particle P during etching
Occurrence clearly corresponds to the operating state of the device. That is, almost no particles are generated during the etching, but many particles are generated at the end of the etching, and the frequency of generation of the particles is high when the purge gas is introduced.

On the other hand, when the image in which the scattered light from the particles was captured was examined in detail, the trace of the particles at the end of etching tended toward the substrate, and tended toward the exhaust port when the purge gas was introduced. From the above, it is considered that particles that floated during etching fall due to the stop of the high-frequency power supply at the end of etching, and fly toward a substrate that has not been completely neutralized because the viscous flow of the process gas is small. Can be But,
A few seconds after the end of the etching, a purge gas is introduced, and the particles are considered to head to an exhaust port together with the purge gas.

The following specific examples have been invented based on the above findings. The following specific examples 1 to 16 are RF plasma CVD apparatuses, R
The present invention can be commonly applied to an F plasma etching apparatus and an RF plasma sputtering apparatus. Here, an RF plasma etching apparatus will be described unless otherwise specified, but the same applies to other RF processing apparatuses.

(First Embodiment) FIG. 3A shows a flow of a cover operation timing according to a first embodiment of the present invention. Immediately before the high frequency voltage stops, the cover 3600 covering the substrate 3000 is closed at t1, and the particles falling toward the substrate 3000 at the moment when the high frequency voltage stops are covered.
00 is accepted. The cover 3600 is closed during the introduction of the purge gas with a high particle generation frequency. After the introduction of the purge gas is stopped, the cover is opened at t2 immediately before the processed substrate is transported out of the processing chamber 2100. In this manner, while many particles P are falling on the substrate, the cover 36
00 is in the closed state, so it surely covers the substrate 3000,
Prevents particles P from adhering. The shape of the cover may be a single plate or a plurality of blades such as a camera shutter. Further, the semiconductor manufacturing apparatus to which the present invention is applied is not limited to a plasma etching apparatus as in the conventional example, but can be applied to an apparatus that processes using plasma such as a plasma CVD apparatus. The timing of opening the cover may be t21 immediately after the processed substrate is transported out of the processing chamber 2100 as shown in FIG. 3B.

(Second Specific Example) FIG. 4 shows a flow of cover operation timing according to a second specific example of the present invention. The cover 3600 covering the substrate 3000 is closed at t1 immediately before stopping the high-frequency voltage, and the particles P falling toward the substrate at the moment when the high-frequency voltage stops are received by the cover 3600. The processed substrate 3000 is placed in the processing chamber 2100.
After being transported outside, the cover is opened at t3 immediately before the next substrate is transported into the processing chamber. In this way, it is possible to prevent particles falling by operating the cover from adhering to the substrate.

(Third Specific Example) FIG. 5 shows a flow of cover operation timing according to a third specific example of the present invention. Immediately before applying the high-frequency voltage, at t4, open the cover that covers the substrate,
The cover is closed at t1 immediately before the high frequency voltage stops. When the etching process is not performed, the cover 3600 is closed, so that the particles that separate and fall from the upper processing electrode 2200 or the inner wall of the processing chamber 2100 are received by the cover, thereby preventing the particles from adhering to the substrate. In addition to the above-described configuration, a detection unit that detects that the cover 3600 has been closed may be provided, and the high-frequency power supply 2400 may be turned off based on the detection result of the detection unit.

(Fourth Specific Example) FIG. 6A shows a flow of cover potential change timing according to a fourth specific example of the present invention. In addition to the first to third embodiments of the present invention, the cover 36 is further provided from t5 immediately before stopping the application of the high-frequency voltage to time t6 of several seconds from the start of the introduction of the purge gas.
00 is given an electric potential. Even after the application of the high-frequency voltage is stopped, the particles fall toward the substrate charged with the residual charge of the electrostatic chuck. Therefore, the potential of the cover is equal to the self-bias potential of the lower electrode 2300, or the sign is one. It is preferable to select a value whose absolute value is larger than the self-bias potential. Particles generated immediately after stopping the application of the high-frequency voltage drop toward the cover 3600 and are attracted. Particles generated after the introduction of the purge gas are flown by the purge gas and fall toward the exhaust port 2200, and do not adhere to the substrate. Cover 3600
The material may be the same conductive material as the inner wall of the processing chamber 2100, for example, an aluminum alloy, or the surface of the metal electrode may be covered with aluminum oxide or silicon oxide to reduce particles generated. FIG.
As shown in (b), just before the purge gas is introduced, t
At 61, an arrangement may be made to apply a potential.

(Fifth Embodiment) FIG. 7 shows a flow of a cover potential change timing according to a fifth embodiment of the present invention.
In the second and third specific examples (FIGS. 4 and 5) of the present invention, a potential is applied to the cover from t7 immediately before stopping the application of the high-frequency voltage to time t8 when the unloading of the processed substrate from the processing chamber is completed. . It is preferable that the potential of the cover be equal to the self-bias potential of the lower electrode 2300 or a value whose sign matches and whose absolute value is larger than the self-bias potential. Particles generated from immediately after the application of the high-frequency voltage is stopped until the transfer port is opened are collected on the cover and do not adhere to the substrate.

(Sixth Embodiment) FIG. 8 shows a flow of a cover potential change timing according to a sixth embodiment of the present invention.
In the second and third specific examples (FIGS. 4 and 5) of the present invention, a potential is applied to the cover from when the cover starts to be closed until the cover is opened. During the application of the high-frequency voltage, the cover 3600 and the lower processing electrode 2300 are set to the same potential, so that the substrate 30
No electric discharge occurs between the cover and the cover 3600, so that damage to the substrate and generation of particles between the cover and the substrate can be prevented. Then, after the application of the high-frequency voltage is stopped, the potential of the cover is equal to the self-bias potential, or the potential coincides with the sign and a potential whose absolute value is larger than the self-bias potential is applied. Note that this specific example may be applied to the first specific example.

(Seventh Specific Example) One of the typical operating states of an etching apparatus generally used in a semiconductor manufacturing plant
The cycle is shown in FIG. Etching is performed by introducing a highly reactive process gas such as chlorine into the processing chamber from the upper electrode / gas blow-out plate facing the substrate, and applying a voltage between the electrodes when the pressure reaches a certain level, thereby converting the process gas into plasma. You. When the etching is completed, the application of the high-frequency voltage and the introduction of the process gas are simultaneously stopped, and after a few seconds, a halogen gas or the like having low reactivity is introduced as a purge gas. In the etching apparatus according to the seventh embodiment of the present invention shown in FIG. 11, the supply of the process gas is stopped when the etching is completed. At this time, it is known that the particles are positively charged.
By applying a negative potential to the conductive particle removing electrode 11 provided between the upper electrode 2200 and the lower electrode 2300 inside, the particles are forcibly removed. As for the shape of the particle removing electrode 11, any existing shape such as a plate or a lattice may be used as long as the process is not affected. Many particles that fall at the moment when the high-frequency voltage stops are trapped by the particle removing electrode 11, and are prevented from reaching the substrate 3000. Note that the power supply control means 420 of the negative power supply 410 for applying a negative potential to the electrode 11 may be provided in synchronization with the end of the etching.

(Eighth Specific Example) FIG. 12 shows an etching apparatus incorporating a function of trapping particles by using a deposition shield. In a semiconductor manufacturing apparatus, a shield plate 12 for preventing deposits generated during processing from adhering to a chamber wall is often used. The deposition shield plate 12 is provided between the processing electrodes 2200 and 2300 and the side wall of the processing chamber 2100, and deposits are intentionally deposited on the deposition shield plate 12, and the deposition shield plate 12
The number of times of cleaning the inside of the chamber can be reduced by replacing. In many cases, the deposition shield 12 is made of a conductive metal or the like, and the deposition shield 12 is electrically insulated from the chamber. Apply a negative potential. A large number of positively charged particles falling at the moment when the high-frequency voltage stops are attracted by the potential potential of the deposition shield plate 12 having a negative potential, and finally the deposition shield plate 12 has a negative potential.
And is prevented from reaching the substrate 3000.

(Ninth Specific Example) FIG. 13 shows an etching apparatus incorporating a function of trapping particles by using a grid 13 having conductivity. That is, the grid 13 is connected to the processing electrodes 2200 and 2300 and the processing chamber 210.
The grid 13 is provided so as to be electrically insulated from the chamber. When the etching is completed, the supply of the process gas is stopped, and a negative potential is applied to the grid 13.
A large number of positively charged particles falling at the moment when the high-frequency voltage stops are converted to a grid 13 having a negative potential.
And is finally trapped by the lid 13 to prevent it from reaching the substrate.

FIG. 14 shows a gas exhaust port 14 provided at the lower part of the processing chamber made of a conductive material, for example, metal, and this gas exhaust port 14 is electrically insulated. By doing so, the particles are guided to the exhaust port,
This is an etching apparatus in which particles are prevented from falling onto a substrate by forcibly exhausting gas. That is, when the supply of the process gas is stopped at the end of the etching, a negative potential is given to the exhaust port 14, whereby a large number of positively charged particles falling at the moment when the high frequency voltage stops have a negative potential. The gas is drawn by the potential potential of the exhaust port 14 and finally exhausted, and is prevented from reaching the substrate.

(Eleventh Specific Example) FIG. 15 shows an etching apparatus in which a grid 13 having conductivity is provided near a gas exhaust port 14 and particles are trapped by the grid 13. That is, the grid 13 is installed in front of the exhaust port 14 so as to be electrically insulated from the chamber, and when the etching is completed, the supply of the process gas is stopped, and a negative potential is applied to the grid 13. Many positively charged particles falling at the moment when the high-frequency voltage stops are attracted by the potential potential of the grid 13 having a negative potential, and finally trapped by the grid 13 or the exhaust port 14. , And is prevented from reaching the substrate.

(Twelfth Specific Example) FIG. 16 shows a twelfth specific example. The conductive grid 13 is connected to the upper electrode 2.
It is installed between the lower electrode 200 and the lower electrode 2300 and kept electrically floating. By doing so, during the process, that is, during the discharge, the grid 13 follows the potential of the plasma and becomes in a floating state. When a negative potential is applied to the grid 13 at the end of the process, the particles are attracted by the potential potential having the negative potential, thereby preventing the particles from reaching the substrate. Then, the semiconductor substrate 3000 is transported in this state.

(Thirteenth Specific Example) FIG. 17 shows a thirteenth specific example. In this specific example, a sufficiently large plasma PZ is generated for the semiconductor substrate 3000. Since the plasma PZ is generated in accordance with the diameters of the upper electrode 2200 and the lower electrode 2300, in the case of FIG. 17, the plasma is generated far outside the substrate 3000. As described above, by causing the plasma PZ to protrude more than the substrate 3000, particles can be prevented from falling along the peripheral portion of the plasma PZ and falling onto the substrate 3000.

(Fourteenth Specific Example) FIG. 18 shows a fourteenth specific example. In this specific example, a donut-shaped electrode 15 is arranged on the lower electrode 2300 so as to surround the substrate 3000,
A negative voltage having an absolute value larger than the self-bias voltage is applied to the electrode 15. In this case, the applied voltage may be a DC voltage. The voltage is applied when the process is completed and the plasma power is turned off. Further, a negative constant bias may be applied to the voltage applied to the cathode electrode, that is, the lower electrode 2300, to cause the same fluctuation as the self-bias voltage. By doing so, particles having a positive charge are guided to the electrode 15 and the particles can be prevented from falling onto the substrate 3000.

(Fifteenth Specific Example) FIG. 19 shows a fifteenth specific example. In this specific example, a laser device for monitoring the generation of particles is introduced into the processing chamber 2100. Here, the place where the laser beam passes is
An anode electrode, that is, in the vicinity of the upper electrode 2200;
With this configuration, near the upper electrode 2200,
Particles trapped near the plasma sheath can be found at an early stage. Then, after detecting the generation of the particles, a negative voltage is applied to the electrode 15 to collect the particles and prevent the particles from falling onto the substrate 3000.

(Sixteenth Specific Example) FIG. 20 shows a sixteenth specific example. In this specific example, the particle removing electrode 15 is provided between the upper electrode 2200 and the lower electrode 2300, the gate valve 17 is provided on the side wall of the processing chamber near the particle removing electrode 15, and a vacuum pump or the like is further provided outside the gate valve 17. Connect the exhaust system. Then, a negative voltage is applied to the electrode 15. When the process is completed and the voltage application to the cathode electrode, that is, the lower electrode 2300 is stopped, a negative voltage is applied to the electrode 15. Thereby, the particles are drawn toward the gate valve 17. At this time, the gate valve 17 is opened at the same time, and the particles are exhausted.
Particles can be prevented from falling on the zero. In FIG. 19, reference numeral 450 denotes third control means for applying a negative voltage to the particle removing electrode 15 based on the detection result of the generation of particles in the processing chamber. The specific examples 1 to 16 described above could be commonly applied to an RF plasma CVD apparatus, an RF plasma etching apparatus, and an RF plasma sputtering apparatus using a high-frequency power supply. In contrast, Specific Examples 17 to 32 below use a DC power supply,
C plasma CVD equipment, DC plasma etching equipment,
The present invention can be commonly applied to a DC plasma sputtering apparatus.

(Seventeenth Embodiment) FIG. 22 shows a flow of a cover operation timing according to a seventeenth embodiment of the present invention. At time t11 immediately before the DC voltage is stopped, the cover 3600 covering the substrate 3000 is closed.
Cover the particles falling toward 00 3600
Take it in. The cover 3600 is closed during the introduction of the purge gas with a high particle generation frequency, and after the introduction of the purge gas is stopped, the cover is opened at t12 immediately before the processed substrate is transported out of the processing chamber 2100. Thus, while many particles P are falling on the substrate, the cover 360
Since 0 is in the closed state, it reliably covers the substrate 3000 and prevents the particles P from adhering. The shape of the cover may be a single plate or a plurality of blades such as a camera shutter.

(Eighteenth Embodiment) FIG. 23 shows a flow of a cover operation timing according to an eighteenth embodiment of the present invention. At time t11 immediately before stopping the DC voltage, the cover 3600 covering the substrate 3000 is closed, and the particles P falling toward the substrate at the moment when the DC voltage is stopped are covered 3600.
Take it in. The processed substrate 3000 is placed in the processing chamber 2
After being transported out of 100, the cover is opened at t13 immediately before the next substrate is transported into the processing chamber. In this way, it is possible to prevent particles falling by operating the cover from adhering to the substrate.

(Nineteenth Embodiment) FIG. 24 shows a flow of cover operation timing according to a nineteenth embodiment of the present invention. The cover covering the substrate is opened at t14 just before the DC voltage is applied, and the cover is closed at t11 just before the DC voltage stops. Cover 3600 when not etched
By closing the upper processing electrode 2200 and the processing chamber 210
The particles that fall off and fall from the inner wall are received by the cover to prevent the particles from adhering to the substrate.
In addition to the above-described configuration, a detection unit that detects that the cover 3600 has been closed may be provided, and the DC power supply 2400 may be turned off based on a detection result of the detection unit.

(Twentieth Embodiment) FIG. 25 shows a flow of cover potential change timing according to a twentieth embodiment of the present invention. In addition to the seventeenth to nineteenth examples of the present invention,
Further, a potential is applied to the cover 3600 from a time t15 immediately before stopping the application of the DC voltage to a time t16 of several seconds from the start of the introduction of the purge gas. Particles generated immediately after stopping the application of the DC voltage fall toward the cover 3600 and are attracted to the cover. Particles generated after the introduction of the purge gas flow into the purge gas and are exhausted by the exhaust port 32.
Since it falls toward 00, it does not adhere to the substrate. As for the material of the cover 3600, a material having the same conductivity as the inner wall of the processing chamber 2100, for example, an aluminum alloy may be used.
Further, the surface of the metal electrode may be covered with aluminum oxide or silicon oxide in order to reduce generated particles.

(Twenty-First Embodiment) FIG. 26 shows a flow of a cover potential change timing according to a twenty-first embodiment of the present invention. The eighteenth and nineteenth specific examples of the present invention (FIGS.
In 4), from the time t17 immediately before stopping the application of the DC voltage, the time t at which the unloading of the processed substrate from the processing chamber is completed
A potential is applied to the cover up to 18. Particles generated from immediately after the application of the DC voltage is stopped until the transfer port is opened are collected on the cover and do not adhere to the substrate.

(22nd Embodiment) FIG. 27 shows a flow of cover potential change timing according to a 22nd embodiment of the present invention. The eighteenth and nineteenth specific examples of the present invention (FIGS.
In 4), a potential is applied to the cover from when the cover starts to be closed until the cover is opened. During the application of the DC voltage, the cover 3600 and the lower processing electrode 2300 are set to the same potential, so that no discharge occurs between the substrate 3000 and the cover 3600.
Damage to the substrate and generation of particles between the cover and the substrate can be prevented. After the application of the DC voltage is stopped, a negative potential is applied to the cover. Note that this specific example may be applied to the seventeenth specific example.

(Twenty-third Specific Example) FIG. 28 is a schematic view of a cross-sectional structure of a DC plasma processing apparatus generally used in a semiconductor manufacturing plant. In the DC plasma processing apparatus according to the twenty-third specific example shown in FIG. 29, it is known that the particles are positively charged at the end of the DC plasma process.
Particles are removed by applying a negative potential to 1. Regarding the shape of the particle removing electrode 11,
Any existing shape may be used as long as it does not affect the C plasma process. Many particles that drop at the moment when the DC voltage stops are trapped by the particle removal electrode 11, and are prevented from reaching the substrate 3000.

(Twenty-fourth Specific Example) FIG. 30 shows a DC plasma processing apparatus configured to trap particles by using a deposition shield. That is, a deposition shield 12 is often used to prevent deposits generated during processing from adhering to the chamber walls. By intentionally depositing deposits on the deposition shield and replacing the deposition shield 12, the number of times of cleaning the inside of the chamber can be reduced. The deposition shield 12 is often made of a conductive metal or the like. The deposition shield 12 is electrically insulated from the chamber, and a negative potential is applied to the deposition shield 12 at the end of the DC plasma process. Many positively charged particles falling at the moment when the DC voltage stops are attracted by the potential potential of the deposition shield 12 having a negative potential, and finally trapped on the wall surface of the deposition shield 12, and 30
00 is prevented from reaching.

(Twenty-Fifth Specific Example) FIG. 31 shows a DC plasma processing apparatus configured to trap particles using a grid 13 having conductivity. That is, the grid 13 is installed so as to be electrically insulated from the chamber, and a negative potential is applied to the grid 13 at the end of the etching. A large number of positively charged particles falling at the moment when the DC voltage stops are attracted by the potential potential of the grid 13 having a negative potential, and finally trapped by the grid 13 and the substrate 300.
Reaching zero is prevented.

(Twenty-Sixth Embodiment) FIG. 32 shows a DC plasma processing apparatus in which the gas exhaust port 14 is electrically insulated from the chamber to forcibly exhaust particles. That is, in this particle removing apparatus, the exhaust port 14
, A large number of positively charged particles falling at the moment when the DC voltage is stopped are attracted to the exhaust port 14 having the negative potential, and finally exhausted, and reach the substrate 3000. It is to prevent.

(Twenty-seventh Embodiment) FIG. 33 shows a DC plasma processing apparatus in which a grid 13 having conductivity is provided in the vicinity of a gas exhaust port 14 to trap particles. That is, in this particle removing apparatus, the grid 13 is installed in front of the exhaust port 14 so as to be electrically insulated from the chamber, and a negative potential is applied to the grid 13 at the end of the DC plasma process. Many positively charged particles that fall at the moment when the DC voltage stops are attracted by the potential potential of the grid 13 having a negative potential, and are eventually trapped by the grid 13 or the exhaust port 14. Exhausted from the substrate 30
00 is prevented from reaching.

(Twenty-eighth Specific Example) FIG. 34 shows a twenty-eighth specific example. The grid 13 is provided between the upper electrode 2200 and the lower electrode 2300, and is kept electrically floating. By doing so, during the process, that is, during the discharge, the grid 13 follows the potential of the plasma and becomes in a floating state. At the end of the process, grid 1
3 is connected to a power supply 4400 to discharge between the grid 13 and the upper electrode 2200. At this time, the power supply 4400
Not connected to lower electrode 2300. In this state, the semiconductor substrate 3000 is transported. By doing so, the particles do not fall while being trapped between the upper electrode 2200 and the grid 13. Also, even if it falls, it flies to the periphery of the plasma due to the potential of the plasma and falls to the periphery of the substrate, and does not fall on the substrate.

FIG. 35 shows a twenty-ninth example. In this specific example, a sufficiently large plasma PZ is generated for the semiconductor substrate 3000. Since the plasma PZ is generated according to the diameters of the upper electrode 2200 and the lower electrode 2300, in the case of FIG.
Rather, a plasma will be generated to a much greater extent. As described above, by causing the plasma PZ to protrude more than the substrate 3000, particles can be prevented from falling along the peripheral portion of the plasma and falling onto the substrate 3000.

(Thirtieth Specific Example) FIG. 36 shows a thirtieth specific example. In this specific example, a donut-shaped electrode 15 is arranged around the substrate 3000, and a negative voltage is applied to the electrode 15. In addition, the negative voltage is applied when the process is completed and the plasma power is turned off. With this configuration, particles having a positive charge can be prevented from being guided to the electrode 15 and falling onto the substrate 3000.

(Thirty-First Specific Example) FIG. 37 shows a thirty-first specific example. In this specific example, laser light for detecting particles is introduced into the processing chamber 2100. Here, the place where the laser beam passes is in the vicinity of the upper electrode 2200, and thus the upper electrode 2200 is formed.
Particles trapped in the vicinity can be found early. Then, after detecting the generation of the particles, a negative voltage is applied to the electrode 15 to collect the particles and prevent the particles from falling onto the substrate 3000.

(Thirty-second example) FIG. 38 shows a thirty-second example. In this specific example, the gate valve 17 is installed outside the upper electrode 2200, and an exhaust system such as a vacuum pump is connected outside the gate valve 17. An electrode 15 is provided before the gate valve 17 so that a negative voltage can be applied. When the process is completed and the voltage application to the lower electrode 2300 is stopped, a negative voltage is applied to the electrode 15. Because of this,
The particles are drawn toward the gate valve 17. At this time, by simultaneously opening the gate valve 17 and exhausting the particles, the particles can be prevented from falling onto the substrate 3000.

[0069]

As described above, the present invention can reduce particles adhering to a substrate. Further, since the invention is based on the charged state of the particles, it is possible to efficiently prevent the adhesion of the particles.

[Brief description of the drawings]

FIG. 1 is a block diagram of a particle removing apparatus of a semiconductor manufacturing apparatus according to the present invention.

FIG. 2 is a diagram showing a configuration of a particle removing apparatus according to the present invention.

FIG. 3 is a diagram illustrating the operation timing of the board cover according to the first specific example of the present invention.

FIG. 4 is a diagram showing operation timings of a board cover according to a second specific example of the present invention.

FIG. 5 is a diagram showing operation timings of a board cover according to a third specific example of the present invention.

FIG. 6 is a diagram showing a potential application timing of a substrate cover according to a fourth specific example of the present invention.

FIG. 7 is a diagram showing a potential application timing of a substrate cover according to a fifth specific example of the present invention.

FIG. 8 is a diagram showing a potential application timing of a substrate cover according to a sixth specific example of the present invention.

9A is a diagram illustrating a configuration of a conventional etching apparatus, and FIG. 9B is a diagram illustrating a relationship between an operating state of the etching apparatus and the number of generated particles.

FIG. 10 is a diagram showing operation timing of a general etching apparatus.

FIG. 11 is a diagram showing a configuration of a seventh specific example of the present invention.

FIG. 12 is a diagram showing an eighth example of the present invention.

FIG. 13 is a diagram showing a ninth specific example of the present invention.

FIG. 14 is a diagram showing a tenth specific example of the present invention.

FIG. 15 is a diagram showing an eleventh example of the present invention.

FIG. 16 is a diagram showing a twelfth example of the present invention.

FIG. 17 is a diagram showing a thirteenth specific example of the present invention.

FIG. 18 is a diagram showing a fourteenth specific example of the present invention.

FIG. 19 is a diagram showing a fifteenth specific example of the present invention.

FIG. 20 is a diagram showing a sixteenth example of the present invention.

FIG. 21 is a diagram and a photograph showing movement of particles in plasma.

FIG. 22 is a diagram showing the operation timing of the board cover according to the seventeenth example of the present invention.

FIG. 23 is a diagram showing the operation timing of the board cover according to the eighteenth example of the present invention.

FIG. 24 is a diagram showing the operation timing of the board cover according to the nineteenth example of the present invention.

FIG. 25 is a diagram showing a potential application timing of a substrate cover according to a twentieth example of the present invention.

FIG. 26 is a diagram showing a potential application timing of a substrate cover according to a twenty-first example of the present invention.

FIG. 27 is a diagram showing a potential application timing of a substrate cover according to a twenty-second example of the present invention.

FIG. 28 is a cross-sectional view showing a structure of a general DC plasma processing apparatus.

FIG. 29 is a diagram showing a twenty-third specific example of the present invention.

FIG. 30 is a diagram showing a twenty-fourth example of the present invention.

FIG. 31 is a diagram showing a twenty-fifth specific example of the present invention.

FIG. 32 is a diagram showing a twenty-sixth example of the present invention.

FIG. 33 is a diagram showing a twenty-seventh example of the present invention.

FIG. 34 is a diagram showing a twenty-eighth specific example of the present invention.

FIG. 35 is a diagram showing a twenty-ninth specific example of the present invention.

FIG. 36 is a diagram showing a thirtieth specific example of the present invention.

FIG. 37 is a diagram showing a thirty-first example of the present invention.

FIG. 38 is a diagram showing a 32nd example of the present invention;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Particle removal electrode 12 Deposition prevention shield 13 Grid 14 Exhaust port 15 Electrode 16 Laser device 17 Gate valve 200 First control means 300 Second control means 410 Negative power supply 420 Power supply control means 450 Third control means 3100 Etching gas introduction Port 1200 Etching gas supply device 1300 Purge gas supply device 1400 Vacuum degree adjustment device 1500 Gas exhaust device 1600 Substrate transfer device 1700 Control device 1900 Insulator 2000 Gas blowing plate 2100 Processing chamber 2200 Processing upper electrode 2300 Processing lower electrode 2400 High frequency power supply 2600 DC power supply for substrate adsorption 2700 Electrostatic chuck electrode 3000 Semiconductor substrate 3100 Inlet for etching gas 3200 Gas outlet 3600 Cover 3800 Substrate transport port 4000 Conductor manufacturing apparatus 4400 direct-current power supply P particles PZ plasma

Claims (34)

[Claims] A process for applying a high-frequency voltage between an upper electrode and a lower electrode to generate plasma in the processing chamber to process a substrate in the processing chamber and to provide a cover for covering the substrate;
In a semiconductor manufacturing apparatus in which the cover is closed to cover the substrate to prevent particles in the processing chamber from adhering to the substrate, a first control unit for controlling the drive timing of the cover is provided. A particle removing apparatus for a semiconductor manufacturing apparatus, wherein a control unit controls the cover from an open state to a closed state immediately before stopping the application of the high-frequency voltage. 2. The particle of a semiconductor manufacturing apparatus according to claim 1, wherein the cover is controlled to be opened from a closed state in synchronization with a transfer operation of a substrate transfer apparatus provided in the semiconductor manufacturing apparatus. Removal device. 3. The particle of a semiconductor manufacturing apparatus according to claim 2, wherein the timing of controlling the cover from the closed state to the open state is immediately before the processed substrate is transferred out of the processing chamber. Removal device. 4. The particle of a semiconductor manufacturing apparatus according to claim 2, wherein the timing of controlling the cover from the closed state to the open state is immediately after the processed substrate is transported out of the processing chamber. Removal device. 5. The particle removing apparatus according to claim 1, wherein the timing of controlling the cover from the closed state to the open state is immediately before the application of the high-frequency voltage. 6. A second control means for applying a potential to the cover and for controlling a timing of applying a potential to the cover, wherein the control means starts the introduction of the purge gas at least immediately before stopping the application of the high-frequency voltage. 6. The particle removing apparatus according to claim 1, wherein control is performed to apply a potential to the cover for a few seconds thereafter. 7. The apparatus according to claim 6, wherein the potential is applied at least until immediately before the purge gas is introduced.
A particle removing apparatus for a semiconductor manufacturing apparatus according to the above. 8. The particle removing apparatus according to claim 6, wherein the potential is applied until the processed substrate is transported outside the processing chamber. 9. The self-bias potential according to claim 6, wherein the potential is equal to or the same as the sign of the self-bias potential appearing at the lower electrode of the processing electrode, and has an absolute value larger than the self-bias potential. A particle removing apparatus for a semiconductor manufacturing apparatus according to any one of the above. 10. The particle removing apparatus according to claim 6, wherein the potential is equal to a potential of a lower electrode of the processing electrode. 11. A substrate is processed by applying a high-frequency voltage to generate plasma in the processing chamber, a cover for covering the substrate is provided, and the cover is closed to cover the substrate. A method for removing particles in a semiconductor manufacturing apparatus, wherein the cover is controlled from an open state to a closed state immediately before stopping the application of the high-frequency voltage in the semiconductor manufacturing apparatus in which the cover is prevented from being attached to a substrate. 12. The particle of a semiconductor manufacturing apparatus according to claim 11, wherein the cover is controlled from a closed state to an open state in synchronization with a transfer operation of a substrate transfer apparatus provided in the semiconductor manufacturing apparatus. Removal method. 13. A substrate is processed by applying a high-frequency voltage to generate plasma in the processing chamber, a cover for covering the substrate is provided, and the cover is closed to cover the substrate. In a semiconductor manufacturing apparatus in which adhesion to a substrate is prevented, a first step of closing the cover from an open state to a closed state, and a second step of stopping application of the high-frequency voltage immediately after the cover is closed. And a third step of applying a potential to the cover. A method for removing particles in a semiconductor manufacturing apparatus, comprising: 14. A process gas comprising: an etching processing chamber; a pair of processing electrodes including an upper electrode and a lower electrode installed in the processing chamber; and a susceptor for fixing a substrate to be processed on the lower electrode. Is introduced into the etching processing chamber, and by applying a predetermined voltage to the processing electrode, a semiconductor manufacturing apparatus for processing the substrate on the susceptor by plasma, wherein a particle removing electrode for removing particles in the processing chamber. A particle removing apparatus for a semiconductor manufacturing apparatus, wherein a charged particle in the processing chamber is removed by applying a negative voltage to the electrode. 15. The particle removing apparatus according to claim 14, wherein the particle removing electrode is provided between the upper electrode and the lower electrode. 16. The particle removing apparatus according to claim 14, wherein an exhaust port is provided on a side wall of the etching chamber near the position where the particle removing electrode is provided. 17. The particle removing apparatus according to claim 14, wherein the particle removing electrode is provided on the lower electrode so as to surround the substrate. 18. The apparatus according to claim 14, wherein the particle removing electrode is provided between the processing electrode and a wall surface of the processing chamber. 19. The particle removing apparatus according to claim 18, wherein the particle removing electrode is a deposition-preventing plate for preventing deposits from adhering to the wall surface of the processing chamber. 20. The particle removing apparatus according to claim 14, wherein the particle removing electrode is provided in or near a gas exhaust port of the etching chamber. 21. A process gas comprising: an etching processing chamber; a pair of processing electrodes including an upper electrode and a lower electrode installed in the processing chamber; and a susceptor for fixing a substrate to be processed on the lower electrode. Is introduced into the etching processing chamber, and by applying a predetermined voltage to the processing electrode, a semiconductor manufacturing apparatus for processing the substrate on the susceptor by forming a plasma, wherein a gas exhaust port of the processing chamber is formed of a conductive member. A particle removing apparatus for a semiconductor manufacturing apparatus, wherein a charged particle in the processing chamber is removed by applying a negative voltage to the conductive member. 22. A process gas comprising: an etching chamber; a pair of processing electrodes including an upper electrode and a lower electrode installed in the processing chamber; and a susceptor for fixing a substrate to be processed on the lower electrode. Is introduced into the etching processing chamber, and a predetermined voltage is applied to the processing electrode, whereby the substrate is formed into a plasma to process the substrate on the susceptor. A charged particle in the processing chamber is removed by applying a negative voltage to the lattice member having the above conductivity. 23. A process gas comprising: an etching chamber; a pair of processing electrodes including an upper electrode and a lower electrode installed in the processing chamber; and a susceptor for fixing a substrate to be processed on the lower electrode. Is introduced into the etching processing chamber, and a predetermined voltage is applied to the processing electrode, so that the substrate is turned into plasma to process the substrate on the susceptor. By providing a removal electrode and applying a negative voltage having an absolute value greater than the self-bias voltage of the lower electrode to this electrode, particles in the processing chamber are prevented from falling onto the substrate. Particle removal equipment for semiconductor manufacturing equipment. 24. A process gas comprising: an etching processing chamber; a pair of processing electrodes including an upper electrode and a lower electrode installed in the processing chamber; and a susceptor for fixing a substrate to be processed on the lower electrode. Is introduced into the etching processing chamber, and a predetermined voltage is applied to the processing electrode, so that the substrate is turned into plasma to process the substrate on the susceptor. In the semiconductor manufacturing apparatus, a negative voltage is applied to the voltage applied to the lower electrode. A semiconductor manufacturing apparatus, wherein a constant bias is applied and fluctuated in the same manner as a self-bias voltage to direct charged particles to the lower electrode and prevent the particles from falling onto the substrate. Particle removal equipment. 25. A laser device for detecting the generation of the particles is provided, and a laser beam of the laser device is applied to the vicinity of the upper electrode to detect the generation of the particles in the processing chamber and the detection result. 25. A control device for applying a negative voltage to said particle removing electrode based on the control signal.
A particle removing apparatus for a semiconductor manufacturing apparatus according to any one of the above. 26. The apparatus according to claim 14, wherein the particle removing electrode is formed of a conductive plate.
A particle removing apparatus for a semiconductor manufacturing apparatus according to any one of the above. 27. The particle removing apparatus according to claim 14, wherein the particle removing electrode is a grid-shaped electrode having conductivity. 28. The particle removing apparatus according to claim 14, wherein the negative voltage is applied after etching is completed. 29. The particle removing apparatus according to claim 14, wherein the negative voltage is applied during the transfer of the substrate. 30. A process gas comprising: an etching processing chamber; a pair of processing electrodes including an upper electrode and a lower electrode installed in the processing chamber; and a susceptor for fixing a substrate to be processed on the lower electrode. Is introduced into the etching processing chamber, and by applying a predetermined voltage to the processing electrode, a semiconductor manufacturing apparatus for processing the substrate on the susceptor by plasma, wherein a particle removing electrode for removing particles in the processing chamber. After completion of the etching of the substrate, by applying a negative voltage to the particle removing electrode, the charged particles in the processing chamber are guided to the particle removing electrode, or by adhering to the particle removing electrode,
A method for removing particles in a semiconductor manufacturing apparatus, wherein the particles are prevented from adhering to the substrate. 31. The method of removing particles in a semiconductor manufacturing apparatus according to claim 29, wherein after applying a negative voltage to said particle removing electrode, the etching gas in the processing chamber is exhausted. 32. A process gas comprising: an etching processing chamber; a pair of processing electrodes including an upper electrode and a lower electrode installed in the processing chamber; and a susceptor for fixing a substrate to be processed on the lower electrode. Is introduced into the etching processing chamber, and a predetermined voltage is applied to the processing electrode, whereby the substrate is formed into a plasma to process the substrate on the susceptor. An electrode for removing particles is provided, and by applying a negative voltage to this electrode, the charged particles are guided toward the gas exhaust port, and at the same time, the etching gas in the processing chamber is exhausted. How to remove particles. 33. A process gas comprising: an etching processing chamber; a pair of processing electrodes including an upper electrode and a lower electrode installed in the processing chamber; and a susceptor for fixing a substrate to be processed on the lower electrode. Is introduced into the etching processing chamber, and a predetermined voltage is applied to the processing electrode, thereby converting the gas exhaust port of the processing chamber into a conductive member by converting the gas exhaust port of the processing chamber into a plasma and processing the substrate on the susceptor. And applying a negative voltage to the exhaust port to guide the charged particles toward the gas exhaust port and simultaneously exhaust the etching gas in the processing chamber. Method. 34. A process gas comprising: an etching chamber; a pair of processing electrodes including an upper electrode and a lower electrode installed in the processing chamber; and a susceptor for fixing a substrate to be processed on the lower electrode. Is introduced into the etching processing chamber, and a predetermined voltage is applied to the processing electrode, so that the substrate is turned into plasma to process the substrate on the susceptor. The magnitude of the generated plasma is larger than that of the substrate. A method of removing particles in a semiconductor manufacturing apparatus, wherein particles in the treatment room are dropped along the peripheral portion of the plasma by largely protruding to prevent the particles from adhering to the substrate.