IN2014DN04032A - - Google Patents
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- Publication number
- IN2014DN04032A IN2014DN04032A IN4032DEN2014A IN2014DN04032A IN 2014DN04032 A IN2014DN04032 A IN 2014DN04032A IN 4032DEN2014 A IN4032DEN2014 A IN 4032DEN2014A IN 2014DN04032 A IN2014DN04032 A IN 2014DN04032A
- Authority
- IN
- India
- Prior art keywords
- batch
- substrates
- processing
- reaction chamber
- atomic layer
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 238000000231 atomic layer deposition Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a method that includes providing a reaction chamber module of an atomic layer deposition reactor for processing a batch of substrates by an atomic layer deposition process and loading the batch of substrates before processing into the reaction chamber module via a different route than the batch of substrates is unloaded after processing. The invention also relates to a corresponding apparatus.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/FI2011/051017 WO2013076347A1 (en) | 2011-11-22 | 2011-11-22 | An atomic layer deposition reactor for processing a batch of substrates and method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014DN04032A true IN2014DN04032A (en) | 2015-05-15 |
Family
ID=48469186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN4032DEN2014 IN2014DN04032A (en) | 2011-11-22 | 2011-11-22 |
Country Status (10)
Country | Link |
---|---|
US (1) | US20140335267A1 (en) |
EP (1) | EP2783023B1 (en) |
JP (1) | JP5927305B2 (en) |
KR (2) | KR20140096365A (en) |
CN (1) | CN103946418A (en) |
IN (1) | IN2014DN04032A (en) |
RU (1) | RU2586956C2 (en) |
SG (1) | SG11201402372TA (en) |
TW (1) | TWI555874B (en) |
WO (1) | WO2013076347A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6411484B2 (en) * | 2013-06-27 | 2018-10-24 | ピコサン オーワイPicosun Oy | Anti-counterfeit signature |
JP6346022B2 (en) * | 2013-07-31 | 2018-06-20 | 京セラ株式会社 | Thin film forming method and solar cell element manufacturing method |
WO2018050953A1 (en) * | 2016-09-16 | 2018-03-22 | Picosun Oy | Apparatus and methods for atomic layer deposition |
RU172394U1 (en) * | 2017-01-13 | 2017-07-06 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" | ATOMIC LAYER DEPOSITION DEVICE |
RU2752059C1 (en) * | 2020-07-14 | 2021-07-22 | Пикосан Ой | Atomic layer deposition (ald) device |
KR102581325B1 (en) * | 2020-12-22 | 2023-09-22 | 한국전자기술연구원 | Batch type atomic layer deposition apparatus |
FI20225272A1 (en) * | 2022-03-30 | 2023-10-01 | Beneq Oy | Reaction chamber, atomic layer deposition apparatus and method |
CN115404464A (en) * | 2022-09-23 | 2022-11-29 | 江苏微导纳米科技股份有限公司 | Method and apparatus for depositing thin film, and solar cell |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5122391A (en) * | 1991-03-13 | 1992-06-16 | Watkins-Johnson Company | Method for producing highly conductive and transparent films of tin and fluorine doped indium oxide by APCVD |
KR100347379B1 (en) * | 1999-05-01 | 2002-08-07 | 주식회사 피케이엘 | Atomic layer deposition apparatus for depositing multi substrate |
US6475276B1 (en) * | 1999-10-15 | 2002-11-05 | Asm Microchemistry Oy | Production of elemental thin films using a boron-containing reducing agent |
JP4089113B2 (en) * | 1999-12-28 | 2008-05-28 | 株式会社Ihi | Thin film production equipment |
WO2003038145A2 (en) * | 2001-10-29 | 2003-05-08 | Genus, Inc. | Chemical vapor deposition system |
US6821563B2 (en) * | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
KR20050004379A (en) * | 2003-07-02 | 2005-01-12 | 삼성전자주식회사 | Gas supplying apparatus for atomic layer deposition |
RU2261289C1 (en) * | 2004-06-08 | 2005-09-27 | Государственное научное учреждение "Научно-исследовательский институт ядерной физики при Томском политехническом университете министерства образования Российской Федерации" | Device for application of multi-layer current-conducting coats on articles made from dielectric materials and ion source for this device |
US7833351B2 (en) * | 2006-06-26 | 2010-11-16 | Applied Materials, Inc. | Batch processing platform for ALD and CVD |
JP4927623B2 (en) * | 2007-03-30 | 2012-05-09 | 東京エレクトロン株式会社 | Method of boosting load lock device |
US8367560B2 (en) * | 2007-06-15 | 2013-02-05 | Hitachi Kokusai Electric Inc. | Semiconductor device manufacturing method |
NL1036164A1 (en) * | 2007-11-15 | 2009-05-18 | Asml Netherlands Bv | Substrate processing apparatus and device manufacturing method. |
CN102037794B (en) | 2008-05-20 | 2013-02-13 | 3M创新有限公司 | Method for continuous sintering on indefinite length webs |
US20090291209A1 (en) * | 2008-05-20 | 2009-11-26 | Asm International N.V. | Apparatus and method for high-throughput atomic layer deposition |
US10041169B2 (en) * | 2008-05-27 | 2018-08-07 | Picosun Oy | System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor |
TW201015738A (en) * | 2008-10-03 | 2010-04-16 | Ind Tech Res Inst | Atomic layer deposition apparatus |
US20100098851A1 (en) * | 2008-10-20 | 2010-04-22 | Varian Semiconductor Equipment Associates, Inc. | Techniques for atomic layer deposition |
US8440048B2 (en) * | 2009-01-28 | 2013-05-14 | Asm America, Inc. | Load lock having secondary isolation chamber |
-
2011
- 2011-11-22 KR KR1020147016100A patent/KR20140096365A/en active Application Filing
- 2011-11-22 EP EP11876170.9A patent/EP2783023B1/en active Active
- 2011-11-22 CN CN201180075016.3A patent/CN103946418A/en active Pending
- 2011-11-22 RU RU2014124039/02A patent/RU2586956C2/en active
- 2011-11-22 KR KR1020167023912A patent/KR101696354B1/en active IP Right Grant
- 2011-11-22 IN IN4032DEN2014 patent/IN2014DN04032A/en unknown
- 2011-11-22 SG SG11201402372TA patent/SG11201402372TA/en unknown
- 2011-11-22 WO PCT/FI2011/051017 patent/WO2013076347A1/en active Application Filing
- 2011-11-22 US US14/359,775 patent/US20140335267A1/en not_active Abandoned
- 2011-11-22 JP JP2014541718A patent/JP5927305B2/en active Active
-
2012
- 2012-10-17 TW TW101138221A patent/TWI555874B/en active
Also Published As
Publication number | Publication date |
---|---|
KR20140096365A (en) | 2014-08-05 |
TW201323650A (en) | 2013-06-16 |
TWI555874B (en) | 2016-11-01 |
US20140335267A1 (en) | 2014-11-13 |
SG11201402372TA (en) | 2014-06-27 |
KR101696354B1 (en) | 2017-01-23 |
EP2783023A1 (en) | 2014-10-01 |
JP2015505899A (en) | 2015-02-26 |
RU2014124039A (en) | 2015-12-27 |
JP5927305B2 (en) | 2016-06-01 |
CN103946418A (en) | 2014-07-23 |
EP2783023A4 (en) | 2015-06-24 |
RU2586956C2 (en) | 2016-06-10 |
WO2013076347A1 (en) | 2013-05-30 |
KR20160105548A (en) | 2016-09-06 |
EP2783023B1 (en) | 2020-11-04 |
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