IN2014CN01876A - - Google Patents
Info
- Publication number
- IN2014CN01876A IN2014CN01876A IN1876CHN2014A IN2014CN01876A IN 2014CN01876 A IN2014CN01876 A IN 2014CN01876A IN 1876CHN2014 A IN1876CHN2014 A IN 1876CHN2014A IN 2014CN01876 A IN2014CN01876 A IN 2014CN01876A
- Authority
- IN
- India
- Prior art keywords
- light
- solid state
- light emitter
- top surface
- state light
- Prior art date
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/62—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using mixing chambers, e.g. housings with reflective walls
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2113/00—Combination of light sources
- F21Y2113/10—Combination of light sources of different colours
- F21Y2113/13—Combination of light sources of different colours comprising an assembly of point-like light sources
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Abstract
SSLSSLSSLSSLSSLSSLSSLSSLSSLSSLA light emitting module (150) emits light through a light exit window (104) and comprises a base (110) a solid state light emitter (154 158) and a partially diffusive reflective layer (102). The base (110) has a light reflective surface (112) which faces towards the light exit window (104). The light reflective surface (112) has a base reflection coefficient Rbase which is defined by a ratio between the amount of light that is reflected by the light reflective surface and the amount of light that impinges on the light reflective surface. The solid state light emitter (154 158) emits light of a first color range (114) comprises a top surface (152 158) and has a solid state light emitter reflection coefficient R_SSL which is defined by a ratio between the amount of light that is reflected by the solid state emitter (154 156) and the amount of light that impinges on the top surface (152 158) of the solid state light emitter (1154 156). A largest linear size dssL of the top surface (106) of the at least one solid state light emitter is defined as the longest distance from a point on the top surface (152 158) of the at least one solid state light emitter to another point on the top surface (152 158) of the at least one solid state light emitter along a straight line. The light exit window (104) comprises at least a part of the partially diffusive reflective layer (102). A solid state light emitter area ratio ? is defined as the ratio between the area of the top surface of the at least one solid state light emitter and the area of the light reflective surface of the base. A gap with a distance h is present between the top surface (152 158) of the at least one solid state light emitter (154 156) and the partially diffusive reflective layer (102). A relatively efficient light emitting module is obtained if 0.3•d = h = 5·d for 0 < ? < 0.1 0.15·d = h = 3·d for 0.1 = ? = 0.25 and 0.1·d = h = 2·d for ? > 0.25 and if the value of the base reflection coefficient Rbase is larger than 70% and larger than the solid state light emitter reflection coefficient R_SSL.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11181914 | 2011-09-20 | ||
PCT/IB2012/051405 WO2013041979A1 (en) | 2011-09-20 | 2012-03-23 | A light emitting module, a lamp, a luminaire and a display device |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2014CN01876A true IN2014CN01876A (en) | 2015-05-29 |
Family
ID=45937495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN1876CHN2014 IN2014CN01876A (en) | 2011-09-20 | 2012-03-23 |
Country Status (9)
Country | Link |
---|---|
US (1) | US9599292B2 (en) |
EP (1) | EP2748872B1 (en) |
JP (1) | JP6170495B2 (en) |
KR (1) | KR101937643B1 (en) |
CN (1) | CN103797597B (en) |
IN (1) | IN2014CN01876A (en) |
RU (1) | RU2586385C2 (en) |
TW (1) | TWI576984B (en) |
WO (1) | WO2013041979A1 (en) |
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-
2012
- 2012-03-23 US US14/232,916 patent/US9599292B2/en active Active
- 2012-03-23 EP EP12713365.0A patent/EP2748872B1/en active Active
- 2012-03-23 JP JP2014531336A patent/JP6170495B2/en active Active
- 2012-03-23 KR KR1020147010513A patent/KR101937643B1/en active IP Right Grant
- 2012-03-23 RU RU2014115713/28A patent/RU2586385C2/en active
- 2012-03-23 WO PCT/IB2012/051405 patent/WO2013041979A1/en active Application Filing
- 2012-03-23 IN IN1876CHN2014 patent/IN2014CN01876A/en unknown
- 2012-03-23 CN CN201280045784.9A patent/CN103797597B/en active Active
- 2012-03-26 TW TW101110430A patent/TWI576984B/en active
Also Published As
Publication number | Publication date |
---|---|
US9599292B2 (en) | 2017-03-21 |
EP2748872A1 (en) | 2014-07-02 |
TWI576984B (en) | 2017-04-01 |
CN103797597A (en) | 2014-05-14 |
US20150009649A1 (en) | 2015-01-08 |
RU2014115713A (en) | 2015-10-27 |
JP6170495B2 (en) | 2017-07-26 |
RU2586385C2 (en) | 2016-06-10 |
JP2014528148A (en) | 2014-10-23 |
KR101937643B1 (en) | 2019-01-11 |
KR20140063852A (en) | 2014-05-27 |
WO2013041979A1 (en) | 2013-03-28 |
EP2748872B1 (en) | 2020-03-11 |
TW201314865A (en) | 2013-04-01 |
CN103797597B (en) | 2017-08-15 |
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