IL157289A0 - Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
- Google Patents
Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
Info
Publication number
IL157289A0
IL157289A0IL15728998AIL15728998AIL157289A0IL 157289 A0IL157289 A0IL 157289A0IL 15728998 AIL15728998 AIL 15728998AIL 15728998 AIL15728998 AIL 15728998AIL 157289 A0IL157289 A0IL 157289A0
Authority
IL
Israel
Prior art keywords
memory cell
semiconductor memory
electrically erasable
charge trapping
cell utilizing
Prior art date
Application number
IL15728998A
Original Assignee
Univ Ramot
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/905,286external-prioritypatent/US6768165B1/en
Application filed by Univ RamotfiledCriticalUniv Ramot
Publication of IL157289A0publicationCriticalpatent/IL157289A0/en