GB958852A - Method of producing single crystals particularly of semiconductor material - Google Patents

Method of producing single crystals particularly of semiconductor material

Info

Publication number
GB958852A
GB958852A GB17384/62A GB1738462A GB958852A GB 958852 A GB958852 A GB 958852A GB 17384/62 A GB17384/62 A GB 17384/62A GB 1738462 A GB1738462 A GB 1738462A GB 958852 A GB958852 A GB 958852A
Authority
GB
United Kingdom
Prior art keywords
single crystal
deposited
seed
base
zeiss
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB17384/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss AG
Original Assignee
Carl Zeiss AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss AG filed Critical Carl Zeiss AG
Publication of GB958852A publication Critical patent/GB958852A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Abstract

958,852. Zone-melting. C. ZEISS-STIFTUNG, [trading as C. ZEISS [firm of]]. May 7, 1962 [May 9, 1961], No. 17384/62. Heading B1S A single crystal is formed from a seed and adjacent deposited material by the passage of a molten zone through the material from the seed using a deflectable beam of charged particles in a vacuum. The material may be deposited by condensation or sputtering. The size of the deposited crystallites is preferably smaller than the thickness of the molten zone. The temperature gradient on the growth side is preferably greater than that on the supply side. Material deposited as a wafer on to a base may be preheated, e.g. in a tempering furnace, and after the formation of a single crystal, the base may be dissolved off. The whole of the material may be converted into a single crystal by the use of a linear image which traverses the material or a raster image. A wafer of desired size and shape may be subesquently cut out by the use of a beam of greater intensity which vaporizes material in its path, Fig. 2. A portion only of the material may be converted into a single crystal of desired shape by appropriate tracking of the beam or the use of a raster beam of variable intensity, Fig. 5. Similarly a single crystal which is only supported by the seed (the latter being attached to a base at right angles to the resulting crystal structure) may be formed, Fig. 6. The seed may be cut from the single crystal and used again. As shown in Fig. 1, material 15 deposited on a base 14 carried by a movable table 30 is recrystallized by means of a deflectable beam 11 which passes from a cathode I through an earthed cathode 3, a deflection system 6, an adjustable diaphragm 8, an earthed tube 12, an electromagnetic focusing lens 13, and a deflection system 17. The operation is followed by means of illuminating system 20, reflecting prisms 21 and 22, axially movable focusing lens 23, reflecting mirror 26 and observation system 27.
GB17384/62A 1961-05-09 1962-05-07 Method of producing single crystals particularly of semiconductor material Expired GB958852A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEZ8732A DE1218411B (en) 1961-05-09 1961-05-09 Process for the production of a thin, single-crystal pellet

Publications (1)

Publication Number Publication Date
GB958852A true GB958852A (en) 1964-05-27

Family

ID=7620604

Family Applications (1)

Application Number Title Priority Date Filing Date
GB17384/62A Expired GB958852A (en) 1961-05-09 1962-05-07 Method of producing single crystals particularly of semiconductor material

Country Status (4)

Country Link
CH (1) CH404966A (en)
DE (1) DE1218411B (en)
GB (1) GB958852A (en)
NL (1) NL278170A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0191504A2 (en) * 1980-04-10 1986-08-20 Massachusetts Institute Of Technology Method of producing sheets of crystalline material
US5217564A (en) * 1980-04-10 1993-06-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5273616A (en) * 1980-04-10 1993-12-28 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5328549A (en) * 1980-04-10 1994-07-12 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5362682A (en) * 1980-04-10 1994-11-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5588994A (en) * 1980-04-10 1996-12-31 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE968581C (en) * 1952-02-24 1958-03-06 Siemens Ag Process for the production of crystals intended for rectifiers, directional conductors, transistors or the like
DE1040693B (en) * 1955-02-07 1958-10-09 Licentia Gmbh Process for the production of a semiconducting stoichiometric compound from components of the highest purity for semiconductor devices
DE1029939B (en) * 1955-06-27 1958-05-14 Licentia Gmbh Process for the production of electrically asymmetrically conductive semiconductor systems
DE1098316B (en) * 1957-06-26 1961-01-26 Union Carbide Corp Process for the production of single-crystalline coatings from doped semiconductor raw materials by vapor deposition in a vacuum

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0191504A2 (en) * 1980-04-10 1986-08-20 Massachusetts Institute Of Technology Method of producing sheets of crystalline material
EP0191505A2 (en) * 1980-04-10 1986-08-20 Massachusetts Institute Of Technology Method of producing sheets of crystalline material
EP0191504A3 (en) * 1980-04-10 1986-09-10 Massachusetts Institute Of Technology Method of producing sheets of crystalline material
EP0191505A3 (en) * 1980-04-10 1986-09-10 Massachusetts Institute Of Technology Method of producing sheets of crystalline material
US5217564A (en) * 1980-04-10 1993-06-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5273616A (en) * 1980-04-10 1993-12-28 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5328549A (en) * 1980-04-10 1994-07-12 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5362682A (en) * 1980-04-10 1994-11-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5549747A (en) * 1980-04-10 1996-08-27 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5588994A (en) * 1980-04-10 1996-12-31 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5676752A (en) * 1980-04-10 1997-10-14 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom

Also Published As

Publication number Publication date
CH404966A (en) 1965-12-31
NL278170A (en) 1900-01-01
DE1218411B (en) 1966-06-08

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