GB8328605D0 - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
GB8328605D0
GB8328605D0 GB838328605A GB8328605A GB8328605D0 GB 8328605 D0 GB8328605 D0 GB 8328605D0 GB 838328605 A GB838328605 A GB 838328605A GB 8328605 A GB8328605 A GB 8328605A GB 8328605 D0 GB8328605 D0 GB 8328605D0
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB838328605A
Other versions
GB2129217A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB8328605D0 publication Critical patent/GB8328605D0/en
Publication of GB2129217A publication Critical patent/GB2129217A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B63—SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
    • B63B—SHIPS OR OTHER WATERBORNE VESSELS; EQUIPMENT FOR SHIPPING 
    • B63B2211/00—Applications
    • B63B2211/02—Oceanography

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB08328605A 1982-11-01 1983-10-26 Photolithography Withdrawn GB2129217A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43826782A 1982-11-01 1982-11-01

Publications (2)

Publication Number Publication Date
GB8328605D0 true GB8328605D0 (en) 1983-11-30
GB2129217A GB2129217A (en) 1984-05-10

Family

ID=23739948

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08328605A Withdrawn GB2129217A (en) 1982-11-01 1983-10-26 Photolithography

Country Status (3)

Country Link
KR (1) KR840006728A (en)
GB (1) GB2129217A (en)
IT (1) IT1171788B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106950722A (en) * 2017-04-12 2017-07-14 厦门腾诺光学科技有限公司 A kind of cloudy surface Sunglasses lenses sun clips and its production technology

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170649A (en) * 1985-01-18 1986-08-06 Intel Corp Sputtered silicon as an anti-reflective coating for metal layer lithography
KR950011563B1 (en) * 1990-11-27 1995-10-06 가부시끼가이샤 도시바 Manufacturing method of semiconductor device
JPH0590224A (en) * 1991-01-22 1993-04-09 Toshiba Corp Manufacture of semiconductor device
US5302240A (en) * 1991-01-22 1994-04-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US6300253B1 (en) 1998-04-07 2001-10-09 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials, and semiconductor wafer assemblies comprising photoresist over silicon nitride materials
US5926739A (en) * 1995-12-04 1999-07-20 Micron Technology, Inc. Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride
US6323139B1 (en) 1995-12-04 2001-11-27 Micron Technology, Inc. Semiconductor processing methods of forming photoresist over silicon nitride materials
US5985771A (en) 1998-04-07 1999-11-16 Micron Technology, Inc. Semiconductor wafer assemblies comprising silicon nitride, methods of forming silicon nitride, and methods of reducing stress on semiconductive wafers
US6316372B1 (en) 1998-04-07 2001-11-13 Micron Technology, Inc. Methods of forming a layer of silicon nitride in a semiconductor fabrication process
US6635530B2 (en) 1998-04-07 2003-10-21 Micron Technology, Inc. Methods of forming gated semiconductor assemblies
JP4086967B2 (en) * 1998-06-18 2008-05-14 日本碍子株式会社 Electrostatic chuck particle generation reducing method and semiconductor manufacturing apparatus

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3881971A (en) * 1972-11-29 1975-05-06 Ibm Method for fabricating aluminum interconnection metallurgy system for silicon devices
DE2911503A1 (en) * 1979-03-23 1980-09-25 Siemens Ag METHOD FOR PRODUCING STRUCTURES FROM POSITIVE PHOTO PAINT LAYERS WITHOUT INTERFERING INTERFERENCE EFFECTS

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106950722A (en) * 2017-04-12 2017-07-14 厦门腾诺光学科技有限公司 A kind of cloudy surface Sunglasses lenses sun clips and its production technology
CN106950722B (en) * 2017-04-12 2023-05-23 厦门腾诺光学科技有限公司 Matte sun lens and production process thereof

Also Published As

Publication number Publication date
IT8323529A0 (en) 1983-10-28
IT1171788B (en) 1987-06-10
GB2129217A (en) 1984-05-10
KR840006728A (en) 1984-12-01

Similar Documents

Publication Publication Date Title
GB2130833B (en) Interface circuit
JPS571256A (en) Integrated circuit
GB8316270D0 (en) Circuit arrangement
GB8309726D0 (en) Integrated circuit arrangement
GB8401959D0 (en) Integrated circuit
EP0107028A3 (en) Circuit arrangement
GB8322131D0 (en) Circuits
GB8333133D0 (en) Sample-&-hold circuit
GB2136649B (en) Integrated circuit
GB8328851D0 (en) Circuit arrangement
GB8305972D0 (en) Circuit
GB8304856D0 (en) Circuit arrangement
GB8527345D0 (en) Circuit
DE3376927D1 (en) Integrated circuit base
GB8328605D0 (en) Integrated circuit
GB8312055D0 (en) Circuit arrangement
GB8305924D0 (en) Linear integrated circuit
DE3175781D1 (en) Integrated circuit
GB8412360D0 (en) Integrated circuit
GB8300387D0 (en) Circuit arrangement
KR910006512B1 (en) Integrated circuit
JPS56122211A (en) Integrated circuit
GB8313517D0 (en) Circuit
GB8311645D0 (en) Circuit
GB8330888D0 (en) Circuits

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)