GB2582378B - Vertical external cavity surface emitting laser with improved external mirror structure - Google Patents

Vertical external cavity surface emitting laser with improved external mirror structure Download PDF

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Publication number
GB2582378B
GB2582378B GB1903988.2A GB201903988A GB2582378B GB 2582378 B GB2582378 B GB 2582378B GB 201903988 A GB201903988 A GB 201903988A GB 2582378 B GB2582378 B GB 2582378B
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GB
United Kingdom
Prior art keywords
emitting laser
surface emitting
cavity surface
mirror structure
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB1903988.2A
Other versions
GB2582378A (en
GB201903988D0 (en
Inventor
Felder Ferdinand
Fill Matthias
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CAMLIN TECHNOLOGIES Ltd
Camlin Tech Ltd
Original Assignee
CAMLIN TECHNOLOGIES Ltd
Camlin Tech Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CAMLIN TECHNOLOGIES Ltd, Camlin Tech Ltd filed Critical CAMLIN TECHNOLOGIES Ltd
Priority to GB1903988.2A priority Critical patent/GB2582378B/en
Publication of GB201903988D0 publication Critical patent/GB201903988D0/en
Publication of GB2582378A publication Critical patent/GB2582378A/en
Application granted granted Critical
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Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H01S5/18366—Membrane DBR, i.e. a movable DBR on top of the VCSEL
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/163—Single longitudinal mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
GB1903988.2A 2019-03-22 2019-03-22 Vertical external cavity surface emitting laser with improved external mirror structure Active GB2582378B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1903988.2A GB2582378B (en) 2019-03-22 2019-03-22 Vertical external cavity surface emitting laser with improved external mirror structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1903988.2A GB2582378B (en) 2019-03-22 2019-03-22 Vertical external cavity surface emitting laser with improved external mirror structure

Publications (3)

Publication Number Publication Date
GB201903988D0 GB201903988D0 (en) 2019-05-08
GB2582378A GB2582378A (en) 2020-09-23
GB2582378B true GB2582378B (en) 2022-08-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
GB1903988.2A Active GB2582378B (en) 2019-03-22 2019-03-22 Vertical external cavity surface emitting laser with improved external mirror structure

Country Status (1)

Country Link
GB (1) GB2582378B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4315532A1 (en) * 2021-03-29 2024-02-07 Excelitas Technologies Corp. Tunable vcsel polarization control with intracavity subwavelength grating
CN113659436B (en) * 2021-08-12 2023-06-20 浙江博升光电科技有限公司 Filtering polaroid and vertical cavity surface emitting laser

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090067774A1 (en) * 2004-07-30 2009-03-12 Robert Magnusson Tunable resonant leaky-mode N/MEMS elements and uses in optical devices
WO2014144866A2 (en) * 2013-03-15 2014-09-18 Praevium Research, Inc. Widely tunable swept source
US20150010034A1 (en) * 2012-01-20 2015-01-08 The Regents Of The University Of California Short cavity surface emitting laser with double high contrast gratings with and without airgap
US20170018908A1 (en) * 2015-07-13 2017-01-19 Canon Kabushiki Kaisha Surface emitting laser, information acquisition apparatus, and imaging apparatus
CN109346922A (en) * 2018-11-29 2019-02-15 西安工业大学 A kind of microlaser and preparation method thereof exporting even polarization light

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090067774A1 (en) * 2004-07-30 2009-03-12 Robert Magnusson Tunable resonant leaky-mode N/MEMS elements and uses in optical devices
US20150010034A1 (en) * 2012-01-20 2015-01-08 The Regents Of The University Of California Short cavity surface emitting laser with double high contrast gratings with and without airgap
WO2014144866A2 (en) * 2013-03-15 2014-09-18 Praevium Research, Inc. Widely tunable swept source
US20170018908A1 (en) * 2015-07-13 2017-01-19 Canon Kabushiki Kaisha Surface emitting laser, information acquisition apparatus, and imaging apparatus
CN109346922A (en) * 2018-11-29 2019-02-15 西安工业大学 A kind of microlaser and preparation method thereof exporting even polarization light

Also Published As

Publication number Publication date
GB2582378A (en) 2020-09-23
GB201903988D0 (en) 2019-05-08

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