GB2431774B - Self-biasing transistor structure and SRAM cell - Google Patents
Self-biasing transistor structure and SRAM cellInfo
- Publication number
- GB2431774B GB2431774B GB0702553A GB0702553A GB2431774B GB 2431774 B GB2431774 B GB 2431774B GB 0702553 A GB0702553 A GB 0702553A GB 0702553 A GB0702553 A GB 0702553A GB 2431774 B GB2431774 B GB 2431774B
- Authority
- GB
- United Kingdom
- Prior art keywords
- self
- sram cell
- transistor structure
- biasing transistor
- biasing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H01L27/11—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004037087A DE102004037087A1 (en) | 2004-07-30 | 2004-07-30 | Self-biasing transistor structure and SRAM cells with fewer than six transistors |
US11/045,177 US7442971B2 (en) | 2004-07-30 | 2005-01-28 | Self-biasing transistor structure and an SRAM cell having less than six transistors |
PCT/US2005/015294 WO2006022915A1 (en) | 2004-07-30 | 2005-04-29 | Self-biasing transistor structure and sram cell |
Publications (3)
Publication Number | Publication Date |
---|---|
GB0702553D0 GB0702553D0 (en) | 2007-03-21 |
GB2431774A GB2431774A (en) | 2007-05-02 |
GB2431774B true GB2431774B (en) | 2009-04-01 |
Family
ID=34968873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB0702553A Active GB2431774B (en) | 2004-07-30 | 2005-04-29 | Self-biasing transistor structure and SRAM cell |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2008508715A (en) |
KR (1) | KR101125825B1 (en) |
GB (1) | GB2431774B (en) |
WO (1) | WO2006022915A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008045037B4 (en) * | 2008-08-29 | 2010-12-30 | Advanced Micro Devices, Inc., Sunnyvale | Static RAM cell structure and multiple contact scheme for connecting dual-channel transistors |
FR2958779B1 (en) * | 2010-04-07 | 2015-07-17 | Centre Nat Rech Scient | MEMORY POINT RAM HAS A TRANSISTOR |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4021835A (en) * | 1974-01-25 | 1977-05-03 | Hitachi, Ltd. | Semiconductor device and a method for fabricating the same |
US4145233A (en) * | 1978-05-26 | 1979-03-20 | Ncr Corporation | Method for making narrow channel FET by masking and ion-implantation |
US4276095A (en) * | 1977-08-31 | 1981-06-30 | International Business Machines Corporation | Method of making a MOSFET device with reduced sensitivity of threshold voltage to source to substrate voltage variations |
US4350991A (en) * | 1978-01-06 | 1982-09-21 | International Business Machines Corp. | Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance |
US4819043A (en) * | 1985-11-29 | 1989-04-04 | Hitachi, Ltd. | MOSFET with reduced short channel effect |
US5672536A (en) * | 1995-06-21 | 1997-09-30 | Micron Technology, Inc. | Method of manufacturing a novel static memory cell having a tunnel diode |
US6245607B1 (en) * | 1998-12-28 | 2001-06-12 | Industrial Technology Research Institute | Buried channel quasi-unipolar transistor |
US20030048657A1 (en) * | 2001-08-28 | 2003-03-13 | Leonard Forbes | Four terminal memory cell, a two-transistor SRAM cell, a SRAM array, a computer system, a process for forming a SRAM cell, a process for turning a SRAM cell off, a process for writing a SRAM cell and a process for reading data from a SRAM cell |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6019152B2 (en) * | 1977-08-31 | 1985-05-14 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | field effect transistor |
US6282137B1 (en) * | 1999-09-14 | 2001-08-28 | Agere Systems Guardian Corp. | SRAM method and apparatus |
-
2005
- 2005-04-29 KR KR1020077002765A patent/KR101125825B1/en active IP Right Grant
- 2005-04-29 JP JP2007523549A patent/JP2008508715A/en active Pending
- 2005-04-29 WO PCT/US2005/015294 patent/WO2006022915A1/en active Application Filing
- 2005-04-29 GB GB0702553A patent/GB2431774B/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4021835A (en) * | 1974-01-25 | 1977-05-03 | Hitachi, Ltd. | Semiconductor device and a method for fabricating the same |
US4276095A (en) * | 1977-08-31 | 1981-06-30 | International Business Machines Corporation | Method of making a MOSFET device with reduced sensitivity of threshold voltage to source to substrate voltage variations |
US4350991A (en) * | 1978-01-06 | 1982-09-21 | International Business Machines Corp. | Narrow channel length MOS field effect transistor with field protection region for reduced source-to-substrate capacitance |
US4145233A (en) * | 1978-05-26 | 1979-03-20 | Ncr Corporation | Method for making narrow channel FET by masking and ion-implantation |
US4819043A (en) * | 1985-11-29 | 1989-04-04 | Hitachi, Ltd. | MOSFET with reduced short channel effect |
US5672536A (en) * | 1995-06-21 | 1997-09-30 | Micron Technology, Inc. | Method of manufacturing a novel static memory cell having a tunnel diode |
US6245607B1 (en) * | 1998-12-28 | 2001-06-12 | Industrial Technology Research Institute | Buried channel quasi-unipolar transistor |
US20030048657A1 (en) * | 2001-08-28 | 2003-03-13 | Leonard Forbes | Four terminal memory cell, a two-transistor SRAM cell, a SRAM array, a computer system, a process for forming a SRAM cell, a process for turning a SRAM cell off, a process for writing a SRAM cell and a process for reading data from a SRAM cell |
Also Published As
Publication number | Publication date |
---|---|
JP2008508715A (en) | 2008-03-21 |
GB0702553D0 (en) | 2007-03-21 |
KR101125825B1 (en) | 2012-03-27 |
WO2006022915A1 (en) | 2006-03-02 |
GB2431774A (en) | 2007-05-02 |
KR20070046840A (en) | 2007-05-03 |
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