GB2361581A - A light emitting diode device - Google Patents

A light emitting diode device Download PDF

Info

Publication number
GB2361581A
GB2361581A GB0009879A GB0009879A GB2361581A GB 2361581 A GB2361581 A GB 2361581A GB 0009879 A GB0009879 A GB 0009879A GB 0009879 A GB0009879 A GB 0009879A GB 2361581 A GB2361581 A GB 2361581A
Authority
GB
United Kingdom
Prior art keywords
light emitting
emitting diode
heat dissipating
diode device
dissipating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0009879A
Other versions
GB0009879D0 (en
Inventor
Chen Chen-Lun Hsing
I-Hsiang Li
Tsui-Chin Yang-Hsiao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lite On Electronics Inc
Original Assignee
Lite On Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lite On Electronics Inc filed Critical Lite On Electronics Inc
Priority to GB0009879A priority Critical patent/GB2361581A/en
Priority to FR0005391A priority patent/FR2808408B3/en
Priority to DE20007730U priority patent/DE20007730U1/en
Publication of GB0009879D0 publication Critical patent/GB0009879D0/en
Publication of GB2361581A publication Critical patent/GB2361581A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00—Planar light sources
    • F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • F21Y2105/12—Planar light sources comprising a two-dimensional array of point-like light-generating elements characterised by the geometrical disposition of the light-generating elements, e.g. arranging light-generating elements in differing patterns or densities
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2113/00—Combination of light sources
    • F21Y2113/10—Combination of light sources of different colours
    • F21Y2113/13—Combination of light sources of different colours comprising an assembly of point-like light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
  • Planar Illumination Modules (AREA)

Abstract

A light emitting diode device <B>1</B> includes a heat dissipating substrate <B>11</B>, a light emitting diode chip <B>12</B>, a printed circuit board <B>13</B>, a layer of protecting epoxy <B>14</B>, a lens layer <B>15</B> and a positioning layer <B>16</B>. The heat dissipating substrate <B>11</B> is installed at the bottom and a cavity <B>112</B> is provided on the upper surface on the heat dissipating substrate <B>11</B>. A mounting region <B>111</B> is installed in the inner surface of the heat dissipating substrate <B>11</B> for mounting the light emitting diode chip <B>12</B>. The heat dissipating substrate <B>11</B> can be made of materials, such as aluminum, copper, or other metal or alloy which have good thermal conductivity. The bottom can be formed with a plurality of heat dissipating slots <B>113</B> or heat dissipating fins <B>114</B>. Each light emitting diode chip <B>12</B> is connected to the mounting region <B>111</B>, either directly or via a submount <B>115</B>. Each printed circuit board <B>13</B> is firmly secured to the heat dissipating substrate <B>11</B> and is provided with at least one electrode portion <B>131</B> and is connected with at least one conductive wire <B>132</B> to the light emitting diode chip <B>12</B>. The chip protecting epoxy layer <B>14</B> serves to protect the light emitting diode chip <B>12</B>. The lens layer <B>15</B> is provided over the chip protecting epoxy layer <B>14</B> and is formed as a spherical cover or covers of other shapes for adjusting view angle. The positioning layer <B>16</B> serves to position the lens layer <B>15</B> to the printed circuit board <B>13</B>. The heat dissipating substrate <B>11</B> may have a curved surface, may be of an elongated shape or may have a bent portion. A light visor <B>20</B> may be installed in front of the device to reduce the interference of light from the outer environment. The device may be used as a backlight for an LCD, a third braking light for a vehicle, a traffic light or a strip light source.

Description

2361581 LIGHT EMITTING DIODE DEVICE
FIELD OF THE INVENTION
The present invention relates to a light emitting diode device, and especially to a light emitting diode device having a low thermal resistance.
The light emitting diode device includes a printed circuit board, a heat dissipation substrate attached to a lower side of the printed circuit board and a plurality of light emitting diode chips mounted on an upper surface of the heat dissipation substrate and electrically connected in parallel and or in serial so to achieve good heat dissipation ability, high brightness and high density of light emitting diode chips in the same area.
BACKGROUND OF THE INVENTION
As shown in Fig. 1, a plane view of a prior art LED lamp indicator is illustrated. In the LED lamp indicator, because of a too high thermal resistance, the heat within the LED lamp indicator la can not be dissipated effectively. Therefore, the light emitting efficiency is reduced with the temperature rising due to increment of current. Moreover, if one LED lamp indicator la is not used carefully, it is possible to be destroyed due to heat expansion from a large current. Therefore,a conventional used LED lamp indicator is not suitable to be used in high power device and thus, a novel design is required to improve such defects.
I SUMMARY OF THE INVENTION
Accordingly, the primary object of the present invention is to provide a light emitting diode device including a heat dissipating substrate, at least one light emitting diode chip, at least one printed circuit board, at least one layer of protecting epoxy, at least one lens layer and at least one positioning layer. By properly combining the heat dissipating substrate and the printed circuit board thereabove, many different light emitting diode devices are formed for being commercially used. Moreover, by at least one parallel connecting and / or serial connecting wire between the light emitting diode chips, a low thermal resistance light emitting diode device is formed.
The various objects and advantages of the present invention will be more readily understood from the following detailed description when read in conjunction with the appended drawing.
BRIEF DESCRIPTION OF THE DRAWINGS
Fig. I is a plane view of a general used LED lamp indicator.
Fig. 2A is a cross sectional view showing the first preferred embodiment of the present invention.
Fig. 2B is a cross sectional view showing the second preferred embodiment of the present invention.
Fig. 2C is a cross sectional view showing the third preferred embodiment of the present invention.
Fig. 2D is a top view showing the fourth preferred embodiment of the 2 present invention.
Fig. 2E is a cross sectional view showing another arrangement of the illuminating section in the present invention.
Fig. 3A is a plane view of the fifth preferred embodiment of the 5 present invention.
Fig. 3B is a plane view of the sixth preferred embodiment of the present invention.
Fig. 3C is a plane view of the seventh preferred embodiment of the present invention.
Fig. 3D is a plane view of the eighth preferred embodiment of the present invention.
Fig. 3E is a lateral view of the ninth preferred embodiment of the present invention.
Fig. 3F is a lateral view of the tenth preferred embodiment of the present invention.
Fig. 3G is a perspective view of the eleventh preferred embodiment of the present invention.
Fig. 4A shows an assembled circuit connection of the twelfth preferred embodiment of the present invention.
Fig. 4B is an assembled circuit cross sectional view of the twelfth preferred embodiment of the present invention.
Fig. 5A shows an assembled circuit connection of the thirteenth preferred embodiment of the present invention.
Fig. 5B is a top view showing an assembled circuit of the thirteenth preferred embodiment of the present invention.
3 Fig. 5C is a top view showing another assembled circuit connection of the thirteenth preferred embodiment of the present invention.
Figs. 6A is a cross sectional view for serial circuit connections of the fourteenth preferred embodi-Ment of the present invention, wherein the heat 5 dissipating substrate is divided.
Figs. 6B is a top view for parallel and serial connections of the fourteenth preferred embodiment of the present invention, wherein the heat dissipating substrate is divided.
Fig. 7 is an upper view for parallel and serial circuit connections of the fifteenth preferred embodiment of the present invention, wherein the heat dissipating substrate is not divided.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
With reference to Fig. 2A, a cross sectional view of the first preferred embodiment according to the present invention is illustrated. The present invention provides a light emitting diode device (LED device) I which includes a heat dissipating substrate 11, at least one light emitting diode chip 12, at least one printed circuit board 13, at least one layer of protecting epoxy 14, at least one lens layer 15 and at least one positioning layer 16.
The heat dissipating substrate I I is installed at bottom of the LED device 1. A cavity 112 is installed on an upper surface of the heat dissipating substrate 11. A mounting region I I I is installed in the inner surface of the cavity 112 for mounting the light emitting diode chip 12. The heat dissipating substrate 11 can be made of aluminum, copper, or other metal and alloy materials which has good thermal conductivity. The bottom can be 4 formed with a plurality of heat dissipating slots 113 or heat dissipating fins 114. Each light emitting diode chip 12 can be connected to the mounting region I I I, or is attached directly to the heat dissipating substrate 11, or as that shown in Fig. 2E, is mounted to a submount 115 on the heat dissipating substrate 11. The submount 115 has the functions of accommodating the expanding coefficients of the light emitting diode chip 12 and the heat dissipating substrate I I and / or heat dissipation. Each printed circuit board 13 is firmly secured to the heat dissipating substrate I I and is installed with at least one electrode portion 13 1 and is connected with at least one conductive wire 132 (aluminum wire or gold wire) to the light emitting diode chip 12. The printed circuit board 13 can be very thin (for example 0.2mm) for reducing the absorption of reflecting and refracting light and thus to enhancing the light emitting effect. The chip protecting epoxy layer 14 serves to protect the light emitting diode chip 12. The lens layer 15 is provided over the chip protecting epoxy layer 14 and is formed as a spherical cover or other shape for adjusting view angle. The positioning layer 16 serves to position the lens layer 15 to the printed circuit board 13. The cavity 112, mounting region 111, printed circuit board 13, light emitting diode chip 12 and conductive wire 132 are formed as an illumination section 17.
As shown in Fig. 2B, the cross sectional view of the second preferred embodiment according to the present invention is illustrated. The difference of the second preferred embodiment diode chip 12 to that in the Fig. 2A is that a left electrode portion 135 and a right electrode portion 135' are installed at the left and right sides of the upper surface of the light emitting diode chip 12 and are connected to conductive wires 132 and 132', respectively, so as to be connected to the light emitting diode chip 12.
As shown in Fig. 2C, the cross sectional view of third preferred embodiment of the present invention is illustrated. The difference of the third preferred embodiment to the Fig. 2A is that in a light emitting diode chip 12, at least two illumination sections 17 are formed on the heat dissipating substrate I I.
As shown in Fig. 2D, the top view of the fourth preferred embodiment according to the present invention is illustrated. The difference of this embodiment to Fig. 2A is that more than one chips 12, 12' and 12" can be installed in a single illumination section 17, and each chip has a different illuminating color (for example, blue color, red color and green color for different chips) and is connected to a respective conductive wire 132.
As shown in Fig. 3A, a plane view of the fifth preferred embodiment of the present invention is illustrated. The present invention is designed such that the light emitting diode device I includes more than one illumination section 17. A base 18 is installed thereon. The illumination section 17 is installed on one plane surface of the heat dissipating substrate 11. The illumination section 17 can be designed to emit a single color, multiple colors, or even a white color. For example, the light emitting diode device I including a illumination section 17 can be formed as the head light source of a portable lighting device, such as flash light. The white light of the illuminating section 17 can be generated by using a light emitting diode chip 12 that emits a blue light or an ultra violet light and providing fluorescent agent or agents in the illuminating section 17. When the light 16 6 emitting diode chip 12 of the blue light is used, the fluorescent agent(s) that generates yellow light is selected so that the blue light and the yellow light mix to become white light. When the light emitting diode chip 12 of an ultra violet light is used, the fluorescent agents are selected to generate lights that can mix to become white light; for instance, red, green, and blue lights are generated by the fluorescent agents and mix to become white light.
As shown in Fig. 313, a plane view of the sixth preferred embodiment of the present invention is illustrated. The difference of this embodiment to Fig. 3A is that the illumination section 17 is installed at a sector, a 10 hemispherical section, or a curved surface of the heat dissipating substrate 11. In this embodiment, a plurality of illumination sections 17 are installed at single one heat dissipating substrate 11. In another embodiment, a light apparatus can be formed by a plurality of devices 1.
As shown in Fig. 3)C, a plane view of the seventh preferred embodiment of the present invention is illustrated. The difference of this embodiment to Fig. 3A is that the illumination section 17 is installed on an elongated light emitting diode device 1 and can be extended as a strip light source device matching with different horizontal view angles, thus, it can be suitable for the back light source device of a liquid crystal display (LCD) or as a third braking light for a car.
As shown in Fig. 31), a plane view of the eighth preferred embodiment of the present invention is illustrated. The difference of this embodiment to Fig. 3A is that three illumination sections 17 are installed on a heat dissipating substrate I I to be formed as a light emitting unit and six units 25 are formed as a light source device 19 for a traffic light.
7 As shown in Fig. 3E, a lateral view of the ninth preferred embodiment of the present invention is illustrated. The difference of this embodiment to that in Fig. 3A is that a light visor 20 is installed in front of the light emitting diode device I with a single illumination section 17 for reducing 5 the interference of light from outer environment.
As shown in Fig. 3F, a plane view of the tenth preferred embodiment of the present invention is illustrated. The difference of this embodiment to that in Fig. 3E is that a light emitting diode cluster (LED cluster) 21 is formed by 16 (44) illumination sections 17. The LED cluster 21 can be formed by in n illumination sections 17, wherein in, n are positive integers, such as 1, 2, 3,...
As shown in Fig. 3G, the perspective view of the eleventh preferred embodiment of the present invention is illustrated. The difference of this embodiment to that in Fig. 3 is that the light emitting diode device I can be formed as a light emitting ring 22 with a ring or to have a bent portion in shape for being used as a backlight source device of a liquid crystal display.
As shown in Figs. 4A and 413, the circuit diagram of the twelfth preferred embodiment of the present invention is illustrated, which is identical to the embodiment shown in Fig. 31). In the circuit, each of the left and right sides of a single printed circuit board 13 is installed with three identical or different heat dissipation substrate 11. A serial connecting wire 3 is installed to connect each electrode portion 131, 131' and 131". Each end contact portion 133 and 133' can be provided with an electric connecting means 4, such as screwing or welding for connecting the heat dissipating substrate 11 to the printed circuit boards, respectively, 13.
8 The printed circuit boards 13 are electrically connected by the parallel connected wire 2 so as to form a complete circuit.
As shown in Figs. 5A, 5B and 5C, top views of circuit diagrams of the thirteenth embodiment of the present invention in different arrangement are illustrated. This embodiment is similar to the embodiment shown in Fig. 3D, but only four sets of illumination sections 17 (three in each set) are installed in a single and complete heat dissipating substrate 11 and installed with a whole printed circuit board 13. The light emitting diode chips 12 thereon are connected to the parallel connected circuits 2 and serial connected circuits 3 through a left electrode portion 135 which may be a negative electrode and a right electrode portion 135' which may be positive electrode so as to be formed as an assembled circuit. Further, since the positive and negative electrodes of each light emitting diode chip 12 are installed on the upper surface of the printed circuit 13. The parallel connected circuits 2 and serial connected circuits 3 can be completely determined by the printed circuit board 13. Consequently, the heat dissipating substrate 11 is electrically neutral, it can be made as a whole piece, In Fig. 513, the illumination section 17 only includes a single light emitting diode chip 12. In Fig. 5C, the illumination section 17 includes a plurality of light emitting diode chips 12 and 12'.
As shown in Figs. 6A and B, the cross sectional view for serial connections and top view of serial and parallel circuit connections of the fourteenth preferred embodiment of the present invention is illustrated, wherein the heat dissipating substrate 11 is divided. A screwed connection portion (or welding portion) can be installed at a proper place on the 9 printed circuit board 13 to be formed as an electric conductive means 4.
Then many pieces of divided heat dissipating substrates 11 are screwedly connected (or welded) to the lower side of the heat dissipating substrate I I.
Thus, the heat dissipating substrate not only provides the function of heat dissipation but is also electrically connected to the parallel connected circuits 2 and serial connected circuits 3 on the upper surface of the printed circuit board 13.
As shown in Fig. 7, the top view of serial and parallel connections of the fifteenth preferred embodiment of the present invention is illustrated, wherein the heat dissipating substrate 11 is unnecessary to be divided. The difference of this embodiment to that shown in Figs. 6A and 6B is that the heat dissipating substrate I I therebelow is unnecessary to be divided and the whole circuit is completed by connecting the chip to all the parallel connected circuits 2 and serial connected circuits 3 on the upper surface of the printed circuit board 13 thereabove, No screwed connection or welding connection is required.
The present invention has the following advantages:
1. With at least one light emitting diode, at least one heat dissipation substrate and at least one printed circuit board properly accommodated, an LED device having very low heat resistance is achieved.
2. With the light emitting diode chips properly connected by parallel and / or serial circuit, an LED device of great commercial value is created.
25.33. The light emitting diode chip is directly fixed to the heat dissipating substrate, so that the thermal resistance is reduced greatly. The ability to sustain high current is increased and thus the present invention is especially suitable to be used in a high power consumption device.
4. Since the light emission ability for each chip is greatly enhanced, thus illumination is improved largely in the same area, or only a smaller area is necessary to provide an identical illumination.
Although the present invention has been described with reference to the preferred embodiments, it will be understood that the invention is not limited to the details described thereof. Various substitutions and modifications have been suggested in the foregoing description, and others will occur to those of ordinary skill in the art. Therefore, all such substitutions and modifications are intended to be embraced within the scope of the invention as defined in the appended claims.
I I

Claims (17)

What is claimed is:
1. A light emitting diode device comprising:
at least one heat dissipating substrate, provided at a bottom of the light emitting diode device and made of a metal or an alloy; at least one illuminating section provided on an upper surface of the heat dissipating substrate and comprising:
a cavity being formed on the heat dissipating substrate; a printed circuit board provided above the printed circuit board; at least one light emitting diode chip provided in the cavity, said light emitted diode being directly attached to the heat dissipating substrate or to a submount provided between said light emitting diode chip and the heat dissipating substrate; and at least one conductive wire connected between each light emitting diode chip and the printed circuit board.
2. The light emitting diode device as claimed in claim 1, wherein the illumination section includes at least one chip protecting layer for the light emitting diode chip.
3. The licyht emitting diode device as claimed in claim 1, wherein the illuminating section includes at least one lens layer provided over the light emitting diode chip for adjusting the view angle of the light emitted from the chip.
4. The light emitting diode device as claimed in claim 1, wherein the bottom of the heat dissipating substrate is directly machined to form heat dissipation means thereon or is further installed with heat dissipating means.
5. The light emitting diode device as claimed in claim 3, wherein the lens layer is positioned on the heat dissipating substrate by at least one positioning piece.
6. The light emitting diode device as claimed in claim 1, wherein said at least one light emitting diode chip includes a plurality of light emitting diode chips which can emit lights of at least two different colors.
7. The light emitting diode device as claimed in claim 1, wherein said at least one illumination section includes a plurality of illuminating sections emitting lights having at least two different colors.
8. The light emitting diode device as claimed in claim 1, wherein said illumination section is provided on a plane surface of the heat dissipating substrate.
9. The light emitting diode device as claimed in claim 1, wherein said illumination section is provided on a curved surface of the heat dissipating substrate.
I.O.The light emitting diode device as claimed in claim 1, wherein the heat dissipating substrate is of an elongated shape.
1 I.The light emitting diode device as claimed in claim 1, wherein the heat dissipating substrate has a bent portion.
12.The light emitting diode device as claimed in claim 1, wherein said at least one illumination section includes a plurality of illumination sections provided on a plurality of heat dissipating substrates.
13.The light emitting diode device as claimed in claim 12, wherein said plurality of heat dissipating substrates are provided below the same printed circuit board.
14.The light emitting diode device as claimed in claim 1, wherein said at least one light emitting diode chip includes a plurality of light emitting diode chips for emitting blue or ultraviolet light, and the illumination section includes fluorescent agent so as to emit white light.
15.The light emitting diode device as claimed in claim 1, wherein at least one light visor is included.
16.The light emitting diode device as claimed in claim 15, wherein each of said illumination section is provided with a plurality of said light emitting diodes which emit lights having at least two different colors.
17.The light emitting diode device as claimed in claim 15, wherein said at least one illuminating section includes a plurality of illumination sections emitting lights having at least two different colors.
B. A light emitting diode device substantially as hereinbefore described with reference to, and as illustrated in figures 2A to 7 of the accompanying drawings.
14
GB0009879A 2000-04-20 2000-04-20 A light emitting diode device Withdrawn GB2361581A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB0009879A GB2361581A (en) 2000-04-20 2000-04-20 A light emitting diode device
FR0005391A FR2808408B3 (en) 2000-04-20 2000-04-27 LIGHT EMITTING DIODE DEVICE
DE20007730U DE20007730U1 (en) 2000-04-20 2000-04-28 Device with light emitting diodes

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0009879A GB2361581A (en) 2000-04-20 2000-04-20 A light emitting diode device
FR0005391A FR2808408B3 (en) 2000-04-20 2000-04-27 LIGHT EMITTING DIODE DEVICE
DE20007730U DE20007730U1 (en) 2000-04-20 2000-04-28 Device with light emitting diodes

Publications (2)

Publication Number Publication Date
GB0009879D0 GB0009879D0 (en) 2000-06-07
GB2361581A true GB2361581A (en) 2001-10-24

Family

ID=27219451

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0009879A Withdrawn GB2361581A (en) 2000-04-20 2000-04-20 A light emitting diode device

Country Status (3)

Country Link
DE (1) DE20007730U1 (en)
FR (1) FR2808408B3 (en)
GB (1) GB2361581A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004031844A1 (en) 2002-09-30 2004-04-15 Siemens Aktiengesellschaft Illumination device for backlighting an image reproduction device
WO2003069685A3 (en) * 2002-02-14 2004-07-01 Enfis Ltd A light system
WO2005050747A1 (en) * 2003-11-18 2005-06-02 Valeo Electronique & Systemes De Liaison Device for cooling an electrical component and production method thereof
WO2006044902A2 (en) * 2004-10-18 2006-04-27 Bwt Property, Inc. A solid-state lighting apparatus for navigational aids
US7075114B2 (en) * 2003-05-16 2006-07-11 Stanley Electric Co., Ltd. Light-emitting diode for large current driving
US7262438B2 (en) 2005-03-08 2007-08-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LED mounting having increased heat dissipation
US7320632B2 (en) 2000-06-15 2008-01-22 Lednium Pty Limited Method of producing a lamp
US7352127B2 (en) 2000-06-15 2008-04-01 Lednium Pty Limited LED lamp with light-emitting junction arranged in three-dimensional array
JP2008518461A (en) * 2004-10-25 2008-05-29 クリー インコーポレイテッド Solid metal block semiconductor light emitting device mounting substrate and package including cavity and heat sink and method for packaging them
CN100405621C (en) * 2005-09-29 2008-07-23 上海乐金广电电子有限公司 High-output white light source and its production
JP2008527675A (en) * 2005-01-19 2008-07-24 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Lighting device
EP1950490A2 (en) 2002-11-19 2008-07-30 Dan Friis Lighting body or source of light based on light-emitting diodes
EP2160760A2 (en) * 2007-06-22 2010-03-10 Wavenics, Inc. Metal-based photonic device package module and manufacturing method thereof
US7704762B2 (en) 2002-06-14 2010-04-27 Lednium Technology Pty Limited Lamp and method of producing a lamp
US7789573B2 (en) 2006-08-04 2010-09-07 Osram Gesellschaft Mit Beschrankter Haftung Optoelectronic module
US7918574B2 (en) 2005-12-16 2011-04-05 Osram Opto Semiconductors Gmbh Illumination device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6527422B1 (en) * 2000-08-17 2003-03-04 Power Signal Technologies, Inc. Solid state light with solar shielded heatsink
US20020079505A1 (en) * 2000-12-21 2002-06-27 Stefan Becker Semiconductor light unit and method for production of the same
US7497596B2 (en) * 2001-12-29 2009-03-03 Mane Lou LED and LED lamp
DE102006015377B4 (en) * 2006-04-03 2018-06-14 Ivoclar Vivadent Ag Semiconductor radiation source and light curing device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62196878A (en) * 1986-02-25 1987-08-31 Koito Mfg Co Ltd Illumination system
JPS62229987A (en) * 1986-03-31 1987-10-08 Koito Mfg Co Ltd Illuminator
JPS62235787A (en) * 1986-04-07 1987-10-15 Koito Mfg Co Ltd Illuminating device
US4935665A (en) * 1987-12-24 1990-06-19 Mitsubishi Cable Industries Ltd. Light emitting diode lamp
JPH03119770A (en) * 1989-09-30 1991-05-22 Mitsubishi Cable Ind Ltd Light-emitting module and lamp
JPH088463A (en) * 1994-06-21 1996-01-12 Sharp Corp Thin type led dot matrix unit
JPH11298048A (en) * 1998-04-15 1999-10-29 Matsushita Electric Works Ltd Led mounting board

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62196878A (en) * 1986-02-25 1987-08-31 Koito Mfg Co Ltd Illumination system
JPS62229987A (en) * 1986-03-31 1987-10-08 Koito Mfg Co Ltd Illuminator
JPS62235787A (en) * 1986-04-07 1987-10-15 Koito Mfg Co Ltd Illuminating device
US4935665A (en) * 1987-12-24 1990-06-19 Mitsubishi Cable Industries Ltd. Light emitting diode lamp
JPH03119770A (en) * 1989-09-30 1991-05-22 Mitsubishi Cable Ind Ltd Light-emitting module and lamp
JPH088463A (en) * 1994-06-21 1996-01-12 Sharp Corp Thin type led dot matrix unit
JPH11298048A (en) * 1998-04-15 1999-10-29 Matsushita Electric Works Ltd Led mounting board

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7352127B2 (en) 2000-06-15 2008-04-01 Lednium Pty Limited LED lamp with light-emitting junction arranged in three-dimensional array
US7320632B2 (en) 2000-06-15 2008-01-22 Lednium Pty Limited Method of producing a lamp
WO2003069685A3 (en) * 2002-02-14 2004-07-01 Enfis Ltd A light system
US7704762B2 (en) 2002-06-14 2010-04-27 Lednium Technology Pty Limited Lamp and method of producing a lamp
US8042964B2 (en) 2002-09-30 2011-10-25 Siemens Aktiengesellschaft Illumination device having luminous spots formed by light emitting diodes
CN100412644C (en) * 2002-09-30 2008-08-20 奥斯兰姆奥普托半导体有限责任公司 Illumination device for backlighting an image reproduction device
WO2004031844A1 (en) 2002-09-30 2004-04-15 Siemens Aktiengesellschaft Illumination device for backlighting an image reproduction device
EP1950490A2 (en) 2002-11-19 2008-07-30 Dan Friis Lighting body or source of light based on light-emitting diodes
US7075114B2 (en) * 2003-05-16 2006-07-11 Stanley Electric Co., Ltd. Light-emitting diode for large current driving
WO2005050747A1 (en) * 2003-11-18 2005-06-02 Valeo Electronique & Systemes De Liaison Device for cooling an electrical component and production method thereof
WO2006044902A3 (en) * 2004-10-18 2006-06-29 Bwt Property Inc A solid-state lighting apparatus for navigational aids
WO2006044902A2 (en) * 2004-10-18 2006-04-27 Bwt Property, Inc. A solid-state lighting apparatus for navigational aids
US8598606B2 (en) 2004-10-25 2013-12-03 Cree, Inc. Solid metal block semiconductor light emitting device mounting substrates and packages
JP2008518461A (en) * 2004-10-25 2008-05-29 クリー インコーポレイテッド Solid metal block semiconductor light emitting device mounting substrate and package including cavity and heat sink and method for packaging them
US7878681B2 (en) 2005-01-19 2011-02-01 Osram Opto Semiconductor Gmbh Illumination device
JP2008527675A (en) * 2005-01-19 2008-07-24 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Lighting device
US7262438B2 (en) 2005-03-08 2007-08-28 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LED mounting having increased heat dissipation
CN100405621C (en) * 2005-09-29 2008-07-23 上海乐金广电电子有限公司 High-output white light source and its production
US7918574B2 (en) 2005-12-16 2011-04-05 Osram Opto Semiconductors Gmbh Illumination device
US7789573B2 (en) 2006-08-04 2010-09-07 Osram Gesellschaft Mit Beschrankter Haftung Optoelectronic module
EP2160760A2 (en) * 2007-06-22 2010-03-10 Wavenics, Inc. Metal-based photonic device package module and manufacturing method thereof
EP2160760A4 (en) * 2007-06-22 2013-09-04 Wavenics Inc Metal-based photonic device package module and manufacturing method thereof

Also Published As

Publication number Publication date
GB0009879D0 (en) 2000-06-07
DE20007730U1 (en) 2000-08-03
FR2808408B3 (en) 2002-04-12
FR2808408A3 (en) 2001-11-02

Similar Documents

Publication Publication Date Title
US6799864B2 (en) High power LED power pack for spot module illumination
GB2361581A (en) A light emitting diode device
US7642704B2 (en) Light-emitting diode with a base
KR100999843B1 (en) An efficient high-power led lamp
US6864513B2 (en) Light emitting diode bulb having high heat dissipating efficiency
JP3137072U (en) Package structure
US8672517B2 (en) Light-emitting module
US7794121B2 (en) Two-dimensional luminaire
US8794793B2 (en) Solid state lighting device with elongated heatsink
US7832899B2 (en) LED lamp with heat sink
EP2543919B1 (en) Led light source lamp
US7708427B2 (en) Light source device and method of making the device
US6733156B2 (en) Light-emitting diode illuminated light-emitting
JP2007073968A (en) Thin light source using flexible circuit support
JP2006245084A (en) Light-emitting device
US20150070887A1 (en) Light emitting module, lighting device, and lighting apparatus
US20050082965A1 (en) LED with good heat-dissipating capability
JPH0517680U (en) Light emitting diode indicator
JP3072840U (en) Light emitting diode device
US20120086322A1 (en) Led bulb heat dissipation structure
CN220355191U (en) Liquid cooling LED lamp
KR200344157Y1 (en) LED Lamp device of surface mounting device for prevent heat-deteriorating
KR200295285Y1 (en) Light emitting diode assembly with low thermal resistance
TWI285445B (en) Light-emitting diode module
JP2006107851A (en) Desk lamp

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)