GB2356258B - Chemical amplification type resist composition - Google Patents

Chemical amplification type resist composition

Info

Publication number
GB2356258B
GB2356258B GB0027168A GB0027168A GB2356258B GB 2356258 B GB2356258 B GB 2356258B GB 0027168 A GB0027168 A GB 0027168A GB 0027168 A GB0027168 A GB 0027168A GB 2356258 B GB2356258 B GB 2356258B
Authority
GB
United Kingdom
Prior art keywords
resist composition
type resist
chemical amplification
amplification type
chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0027168A
Other versions
GB2356258A (en
GB0027168D0 (en
Inventor
Yasunori Uetani
Kazuhiko Hashimoto
Yoshiko Miya
Hiroki Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Publication of GB0027168D0 publication Critical patent/GB0027168D0/en
Publication of GB2356258A publication Critical patent/GB2356258A/en
Application granted granted Critical
Publication of GB2356258B publication Critical patent/GB2356258B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
GB0027168A 1999-11-09 2000-11-07 Chemical amplification type resist composition Expired - Fee Related GB2356258B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP31811699 1999-11-09
JP2000029156 2000-02-07
JP2000029159 2000-02-07
JP2000119397 2000-04-20

Publications (3)

Publication Number Publication Date
GB0027168D0 GB0027168D0 (en) 2000-12-27
GB2356258A GB2356258A (en) 2001-05-16
GB2356258B true GB2356258B (en) 2001-12-19

Family

ID=27480182

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0027168A Expired - Fee Related GB2356258B (en) 1999-11-09 2000-11-07 Chemical amplification type resist composition

Country Status (5)

Country Link
JP (1) JP4711018B2 (en)
KR (1) KR20010051470A (en)
DE (1) DE10054996A1 (en)
GB (1) GB2356258B (en)
TW (1) TW527522B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4190167B2 (en) 2000-09-26 2008-12-03 富士フイルム株式会社 Positive resist composition
JP2002357905A (en) * 2001-03-28 2002-12-13 Sumitomo Chem Co Ltd Resist composition
EP1324133A1 (en) * 2001-12-31 2003-07-02 Shipley Co. L.L.C. Photoresist compositions for short wavelength imaging
WO2003100524A1 (en) * 2002-05-27 2003-12-04 Zeon Corporation Radiation-sensitive resin composition, process for producing substrate having patterned resin film, and use of the resin composition
US6806026B2 (en) * 2002-05-31 2004-10-19 International Business Machines Corporation Photoresist composition
DE10228338A1 (en) * 2002-06-25 2004-01-29 Infineon Technologies Ag Chemically reinforced photoresist including a film forming fluorine-containing polymer useful in microchip production has high transparency at 157 nm wavelength, is chemically reinforced, and is simple and cost effective to produce -
US6677419B1 (en) * 2002-11-13 2004-01-13 International Business Machines Corporation Preparation of copolymers
KR20050094828A (en) * 2002-12-26 2005-09-28 도오꾜오까고오교 가부시끼가이샤 Positive resist composition and method for forming resist pattern
JP2004333548A (en) 2003-04-30 2004-11-25 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition and method of forming resist pattern
JP4152810B2 (en) 2003-06-13 2008-09-17 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP2005326491A (en) 2004-05-12 2005-11-24 Tokyo Ohka Kogyo Co Ltd Positive type resist composition and resist pattern forming method
KR20130076364A (en) * 2011-12-28 2013-07-08 금호석유화학 주식회사 Additive for resist and resist composition comprising same
KR101704474B1 (en) * 2011-12-28 2017-02-09 금호석유화학 주식회사 Additive for resist and resist composition comprising same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5660969A (en) * 1993-12-27 1997-08-26 Fujitsu Limited Chemical amplification resist and a fabrication process of a semiconductor device that uses such a chemical amplification resist
US5665527A (en) * 1995-02-17 1997-09-09 International Business Machines Corporation Process for generating negative tone resist images utilizing carbon dioxide critical fluid
JPH10239846A (en) * 1997-02-27 1998-09-11 Fuji Photo Film Co Ltd Positive type photoresist composition

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3748596B2 (en) * 1995-08-02 2006-02-22 富士通株式会社 Resist material and resist pattern forming method
JP3650985B2 (en) * 1997-05-22 2005-05-25 Ｊｓｒ株式会社 Negative-type radiation-sensitive resin composition and pattern production method
JP3873261B2 (en) * 1997-09-04 2007-01-24 Ｊｓｒ株式会社 Radiation-sensitive resin composition, protective film, interlayer insulating film, and method for forming these films
JP3738562B2 (en) * 1998-02-19 2006-01-25 住友化学株式会社 Chemically amplified positive resist composition
JP3305293B2 (en) * 1999-03-09 2002-07-22 松下電器産業株式会社 Pattern formation method
JP3672780B2 (en) * 1999-11-29 2005-07-20 セントラル硝子株式会社 Positive resist composition and pattern forming method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5660969A (en) * 1993-12-27 1997-08-26 Fujitsu Limited Chemical amplification resist and a fabrication process of a semiconductor device that uses such a chemical amplification resist
US5665527A (en) * 1995-02-17 1997-09-09 International Business Machines Corporation Process for generating negative tone resist images utilizing carbon dioxide critical fluid
JPH10239846A (en) * 1997-02-27 1998-09-11 Fuji Photo Film Co Ltd Positive type photoresist composition

Also Published As

Publication number Publication date
GB2356258A (en) 2001-05-16
JP4711018B2 (en) 2011-06-29
JP2010204672A (en) 2010-09-16
DE10054996A1 (en) 2001-05-10
GB0027168D0 (en) 2000-12-27
TW527522B (en) 2003-04-11
KR20010051470A (en) 2001-06-25

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20041107