GB2343308B - Magnetic storage device - Google Patents

Magnetic storage device

Info

Publication number
GB2343308B
GB2343308B GB9823694A GB9823694A GB2343308B GB 2343308 B GB2343308 B GB 2343308B GB 9823694 A GB9823694 A GB 9823694A GB 9823694 A GB9823694 A GB 9823694A GB 2343308 B GB2343308 B GB 2343308B
Authority
GB
United Kingdom
Prior art keywords
storage device
magnetic storage
magnetic
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9823694A
Other versions
GB2343308A (en
GB9823694D0 (en
Inventor
Nikolai Franz Gregor Schwabe
Carsten Heide
Roger James Elliott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB9823694A priority Critical patent/GB2343308B/en
Publication of GB9823694D0 publication Critical patent/GB9823694D0/en
Priority to PCT/EP1999/008368 priority patent/WO2000026918A1/en
Publication of GB2343308A publication Critical patent/GB2343308A/en
Application granted granted Critical
Publication of GB2343308B publication Critical patent/GB2343308B/en
Priority to US10/364,655 priority patent/US20040017721A1/en
Priority to US10/874,205 priority patent/US7218550B2/en
Priority to US11/692,160 priority patent/US7616478B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
GB9823694A 1998-10-30 1998-10-30 Magnetic storage device Expired - Lifetime GB2343308B (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB9823694A GB2343308B (en) 1998-10-30 1998-10-30 Magnetic storage device
PCT/EP1999/008368 WO2000026918A1 (en) 1998-10-30 1999-11-02 Magnetic storage device
US10/364,655 US20040017721A1 (en) 1998-10-30 2003-02-12 Magnetic storage device
US10/874,205 US7218550B2 (en) 1998-10-30 2004-06-24 Magnetic storage device
US11/692,160 US7616478B2 (en) 1998-10-30 2007-03-27 Magnetic storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9823694A GB2343308B (en) 1998-10-30 1998-10-30 Magnetic storage device

Publications (3)

Publication Number Publication Date
GB9823694D0 GB9823694D0 (en) 1998-12-23
GB2343308A GB2343308A (en) 2000-05-03
GB2343308B true GB2343308B (en) 2000-10-11

Family

ID=10841512

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9823694A Expired - Lifetime GB2343308B (en) 1998-10-30 1998-10-30 Magnetic storage device

Country Status (2)

Country Link
GB (1) GB2343308B (en)
WO (1) WO2000026918A1 (en)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9921752D0 (en) * 1999-09-15 1999-11-17 Wang Frank Z Diode-free cross-point array architecture for magnetic random access memories
US6727105B1 (en) * 2000-02-28 2004-04-27 Hewlett-Packard Development Company, L.P. Method of fabricating an MRAM device including spin dependent tunneling junction memory cells
JP2002025245A (en) * 2000-06-30 2002-01-25 Nec Corp Nonvolatile semiconductor storage device and information recording method
US6873540B2 (en) 2001-05-07 2005-03-29 Advanced Micro Devices, Inc. Molecular memory cell
AU2002340795A1 (en) 2001-05-07 2002-11-18 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
US6781868B2 (en) 2001-05-07 2004-08-24 Advanced Micro Devices, Inc. Molecular memory device
EP1390984B1 (en) 2001-05-07 2009-08-26 Advanced Micro Devices, Inc. Floating gate memory device using composite molecular material
KR100895901B1 (en) 2001-05-07 2009-05-04 어드밴스드 마이크로 디바이시즈, 인코포레이티드 Switch element having memeory effect
JP2002359413A (en) * 2001-05-31 2002-12-13 National Institute Of Advanced Industrial & Technology Ferromagnetic tunnel magnetoresistive element
KR100886602B1 (en) * 2001-05-31 2009-03-05 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 Tunnel magnetoresistance element
CN1535467B (en) * 2001-06-20 2010-04-28 因芬尼昂技术北美公司 Memory device, method for manufacturing memory device and method for programming the memory device
US6858481B2 (en) 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
WO2003017282A1 (en) 2001-08-13 2003-02-27 Advanced Micro Devices, Inc. Memory cell
US6838720B2 (en) 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
FR2829868A1 (en) 2001-09-20 2003-03-21 Centre Nat Rech Scient Magnetic memory with spin-polarized current writing for storage and reading of data in electronic systems includes a free magnetic layer made from an amorphous or nanocrystalline alloy of a rare earth and a transition metal
US20030218905A1 (en) * 2002-05-22 2003-11-27 Perner Frederick A. Equi-potential sensing magnetic random access memory (MRAM) with series diodes
WO2004038725A2 (en) * 2002-10-22 2004-05-06 Btg International Limited Magnetic memory device
US6775183B2 (en) 2002-10-22 2004-08-10 Btg International Ltd. Magnetic memory device employing giant magnetoresistance effect
US6639830B1 (en) 2002-10-22 2003-10-28 Btg International Ltd. Magnetic memory device
JP2005064050A (en) 2003-08-14 2005-03-10 Toshiba Corp Semiconductor memory device and method of writing data therein
US9007818B2 (en) 2012-03-22 2015-04-14 Micron Technology, Inc. Memory cells, semiconductor device structures, systems including such cells, and methods of fabrication
US8923038B2 (en) 2012-06-19 2014-12-30 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9054030B2 (en) 2012-06-19 2015-06-09 Micron Technology, Inc. Memory cells, semiconductor device structures, memory systems, and methods of fabrication
US9379315B2 (en) 2013-03-12 2016-06-28 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, and memory systems
US9368714B2 (en) 2013-07-01 2016-06-14 Micron Technology, Inc. Memory cells, methods of operation and fabrication, semiconductor device structures, and memory systems
US9466787B2 (en) 2013-07-23 2016-10-11 Micron Technology, Inc. Memory cells, methods of fabrication, semiconductor device structures, memory systems, and electronic systems
US9461242B2 (en) 2013-09-13 2016-10-04 Micron Technology, Inc. Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems
US9608197B2 (en) 2013-09-18 2017-03-28 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US9281466B2 (en) 2014-04-09 2016-03-08 Micron Technology, Inc. Memory cells, semiconductor structures, semiconductor devices, and methods of fabrication
US9269888B2 (en) 2014-04-18 2016-02-23 Micron Technology, Inc. Memory cells, methods of fabrication, and semiconductor devices
US9349945B2 (en) 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US9768377B2 (en) 2014-12-02 2017-09-19 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB932146A (en) * 1961-01-25 1963-07-24 Siemens Ag Improvements in or relating to insulating layers
GB1124340A (en) * 1964-11-20 1968-08-21 Tokyo Shibaura Electric Co Magnetic film memory device
GB1237904A (en) * 1967-06-16 1971-07-07
US4731757A (en) * 1986-06-27 1988-03-15 Honeywell Inc. Magnetoresistive memory including thin film storage cells having tapered ends
US4780848A (en) * 1986-06-03 1988-10-25 Honeywell Inc. Magnetoresistive memory with multi-layer storage cells having layers of limited thickness
US5173873A (en) * 1990-06-28 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High speed magneto-resistive random access memory
WO1995022820A1 (en) * 1994-02-21 1995-08-24 Philips Electronics N.V. A method and a device for locally altering the magnetization direction in a body of magnetic material
WO1996011469A1 (en) * 1994-10-05 1996-04-18 Philips Electronics N.V. Magnetic multilayer device including a resonant-tunneling double-barrier structure
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
EP0780912A1 (en) * 1995-12-19 1997-06-25 Matsushita Electric Industrial Co., Ltd. Magnetoresistance element, magnetoresistive head and magnetoresistive memory
US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US5734605A (en) * 1996-09-10 1998-03-31 Motorola, Inc. Multi-layer magnetic tunneling junction memory cells
US5764567A (en) * 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
US5801984A (en) * 1996-11-27 1998-09-01 International Business Machines Corporation Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5835314A (en) * 1996-04-17 1998-11-10 Massachusetts Institute Of Technology Tunnel junction device for storage and switching of signals

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB932146A (en) * 1961-01-25 1963-07-24 Siemens Ag Improvements in or relating to insulating layers
GB1124340A (en) * 1964-11-20 1968-08-21 Tokyo Shibaura Electric Co Magnetic film memory device
GB1237904A (en) * 1967-06-16 1971-07-07
US4780848A (en) * 1986-06-03 1988-10-25 Honeywell Inc. Magnetoresistive memory with multi-layer storage cells having layers of limited thickness
US4731757A (en) * 1986-06-27 1988-03-15 Honeywell Inc. Magnetoresistive memory including thin film storage cells having tapered ends
US5173873A (en) * 1990-06-28 1992-12-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High speed magneto-resistive random access memory
WO1995022820A1 (en) * 1994-02-21 1995-08-24 Philips Electronics N.V. A method and a device for locally altering the magnetization direction in a body of magnetic material
WO1996011469A1 (en) * 1994-10-05 1996-04-18 Philips Electronics N.V. Magnetic multilayer device including a resonant-tunneling double-barrier structure
EP0780912A1 (en) * 1995-12-19 1997-06-25 Matsushita Electric Industrial Co., Ltd. Magnetoresistance element, magnetoresistive head and magnetoresistive memory
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
US5734605A (en) * 1996-09-10 1998-03-31 Motorola, Inc. Multi-layer magnetic tunneling junction memory cells
US5764567A (en) * 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
US5801984A (en) * 1996-11-27 1998-09-01 International Business Machines Corporation Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment

Also Published As

Publication number Publication date
WO2000026918A1 (en) 2000-05-11
GB2343308A (en) 2000-05-03
GB9823694D0 (en) 1998-12-23

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20090521 AND 20090527

732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20090528 AND 20090603

746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 20150420

PE20 Patent expired after termination of 20 years

Expiry date: 20181029