GB2337619B - Threshold voltage verification circuit of a non-volatile memory cell and program and erasure verification method using the same - Google Patents

Threshold voltage verification circuit of a non-volatile memory cell and program and erasure verification method using the same

Info

Publication number
GB2337619B
GB2337619B GB9910010A GB9910010A GB2337619B GB 2337619 B GB2337619 B GB 2337619B GB 9910010 A GB9910010 A GB 9910010A GB 9910010 A GB9910010 A GB 9910010A GB 2337619 B GB2337619 B GB 2337619B
Authority
GB
United Kingdom
Prior art keywords
program
memory cell
volatile memory
threshold voltage
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9910010A
Other versions
GB9910010D0 (en
GB2337619A (en
GB2337619A8 (en
Inventor
Bok Nam Song
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019950005924A external-priority patent/KR0145382B1/en
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB9910010D0 publication Critical patent/GB9910010D0/en
Publication of GB2337619A publication Critical patent/GB2337619A/en
Publication of GB2337619A8 publication Critical patent/GB2337619A8/en
Application granted granted Critical
Publication of GB2337619B publication Critical patent/GB2337619B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/52—Protection of memory contents; Detection of errors in memory contents
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
    • G06F2201/81—Threshold
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
GB9910010A 1995-03-21 1996-03-19 Threshold voltage verification circuit of a non-volatile memory cell and program and erasure verification method using the same Expired - Fee Related GB2337619B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019950005924A KR0145382B1 (en) 1995-03-21 1995-03-21 Auto-threshold verify circuit of flash eeprom
GB9605762A GB2299190B (en) 1995-03-21 1996-03-19 Threshold voltage verification circuit of a non-volatile memory cell

Publications (4)

Publication Number Publication Date
GB9910010D0 GB9910010D0 (en) 1999-06-30
GB2337619A GB2337619A (en) 1999-11-24
GB2337619A8 GB2337619A8 (en) 1999-11-29
GB2337619B true GB2337619B (en) 2000-03-01

Family

ID=26308957

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9910010A Expired - Fee Related GB2337619B (en) 1995-03-21 1996-03-19 Threshold voltage verification circuit of a non-volatile memory cell and program and erasure verification method using the same

Country Status (1)

Country Link
GB (1) GB2337619B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0246965A1 (en) * 1986-05-23 1987-11-25 Thomson Composants Militaires Et Spatiaux Security device for an EPROM
GB2215155A (en) * 1988-02-17 1989-09-13 Intel Corp Program/erase selection for flash memory
EP0438172A1 (en) * 1990-01-19 1991-07-24 Kabushiki Kaisha Toshiba Semiconductor memory device having monitoring function
US5371706A (en) * 1992-08-20 1994-12-06 Texas Instruments Incorporated Circuit and method for sensing depletion of memory cells

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0246965A1 (en) * 1986-05-23 1987-11-25 Thomson Composants Militaires Et Spatiaux Security device for an EPROM
GB2215155A (en) * 1988-02-17 1989-09-13 Intel Corp Program/erase selection for flash memory
EP0438172A1 (en) * 1990-01-19 1991-07-24 Kabushiki Kaisha Toshiba Semiconductor memory device having monitoring function
US5371706A (en) * 1992-08-20 1994-12-06 Texas Instruments Incorporated Circuit and method for sensing depletion of memory cells

Also Published As

Publication number Publication date
GB9910010D0 (en) 1999-06-30
GB2337619A (en) 1999-11-24
GB2337619A8 (en) 1999-11-29

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20130319