GB2326025B - Method of forming a field oxide film in a semicondutor device - Google Patents

Method of forming a field oxide film in a semicondutor device

Info

Publication number
GB2326025B
GB2326025B GB9818286A GB9818286A GB2326025B GB 2326025 B GB2326025 B GB 2326025B GB 9818286 A GB9818286 A GB 9818286A GB 9818286 A GB9818286 A GB 9818286A GB 2326025 B GB2326025 B GB 2326025B
Authority
GB
United Kingdom
Prior art keywords
forming
oxide film
field oxide
semicondutor device
semicondutor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9818286A
Other versions
GB9818286D0 (en
GB2326025A (en
Inventor
Sang Hoon Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019940016088A external-priority patent/KR0125312B1/en
Priority claimed from KR1019940016110A external-priority patent/KR100187676B1/en
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Priority claimed from GB9513227A external-priority patent/GB2291261B/en
Publication of GB9818286D0 publication Critical patent/GB9818286D0/en
Publication of GB2326025A publication Critical patent/GB2326025A/en
Application granted granted Critical
Publication of GB2326025B publication Critical patent/GB2326025B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
GB9818286A 1994-07-06 1995-06-29 Method of forming a field oxide film in a semicondutor device Expired - Fee Related GB2326025B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1019940016088A KR0125312B1 (en) 1994-07-06 1994-07-06 Field oxidation method of semiconductor device
KR1019940016110A KR100187676B1 (en) 1994-07-06 1994-07-06 Method of forming field oxide film in a semiconductor device
GB9513227A GB2291261B (en) 1994-07-06 1995-06-29 Method of forming a field oxide film in a semiconductor device

Publications (3)

Publication Number Publication Date
GB9818286D0 GB9818286D0 (en) 1998-10-14
GB2326025A GB2326025A (en) 1998-12-09
GB2326025B true GB2326025B (en) 1999-03-24

Family

ID=27267791

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9818286A Expired - Fee Related GB2326025B (en) 1994-07-06 1995-06-29 Method of forming a field oxide film in a semicondutor device

Country Status (1)

Country Link
GB (1) GB2326025B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001075884A2 (en) 2000-04-05 2001-10-11 Sony United Kingdom Limited Audio/video reproducing apparatus and method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4580330A (en) * 1984-06-15 1986-04-08 Texas Instruments Incorporated Integrated circuit isolation
US5252511A (en) * 1991-03-04 1993-10-12 Samsung Electronics Co., Ltd. Isolation method in a semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4580330A (en) * 1984-06-15 1986-04-08 Texas Instruments Incorporated Integrated circuit isolation
US5252511A (en) * 1991-03-04 1993-10-12 Samsung Electronics Co., Ltd. Isolation method in a semiconductor device

Also Published As

Publication number Publication date
GB9818286D0 (en) 1998-10-14
GB2326025A (en) 1998-12-09

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20070629