GB2322831A - Ink-jet printhead with thin film shape memory alloy - Google Patents
Ink-jet printhead with thin film shape memory alloy Download PDFInfo
- Publication number
- GB2322831A GB2322831A GB9724165A GB9724165A GB2322831A GB 2322831 A GB2322831 A GB 2322831A GB 9724165 A GB9724165 A GB 9724165A GB 9724165 A GB9724165 A GB 9724165A GB 2322831 A GB2322831 A GB 2322831A
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- Prior art keywords
- shape memory
- thin film
- memory alloy
- film shape
- recording solution
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- 229910001285 shape-memory alloy Inorganic materials 0.000 title claims abstract description 158
- 239000010409 thin film Substances 0.000 title claims abstract description 153
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910000734 martensite Inorganic materials 0.000 claims abstract description 28
- 229910001566 austenite Inorganic materials 0.000 claims abstract description 24
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 238000001816 cooling Methods 0.000 claims abstract description 9
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 6
- 239000000956 alloy Substances 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000000137 annealing Methods 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims description 30
- 238000006073 displacement reaction Methods 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 5
- 230000009466 transformation Effects 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 238000012549 training Methods 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 32
- 230000003797 telogen phase Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 66
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 230000003247 decreasing effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000002708 enhancing effect Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 230000001131 transforming effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14346—Ejection by pressure produced by thermal deformation of ink chamber, e.g. buckling
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Micromachines (AREA)
Abstract
The printhead includes a thin film (0.3-5Ám) shape memory alloy 12 that is phase-transformed on heating (Fig. 6(C)) to eject ink droplets. On cooling (Fig.6(D)), the alloy buckles to its rest phase by the residual compressive stress and replacement ink is introduced into the chamber by capillary force. A method of producing the printhead includes depositing the alloy on a substrate, annealing the alloy, etching the substrate to expose the alloy that is transformed into an austenite by heating and then into a martensite by cooling.
Description
2322831
APPARATUS AND METHOD FOR INJECTING A RECORDING SOLUTION OF A PRINT HEAD BACKGROUND OF THE INVENTION 1. Field of the Invention
The present invention relates to an apparatus and method for injecting a recording solution of a print head, and more particularly to an apparatus and method for injecting a recording solution of a print head, wherein, a pressure of a liquid chamber is regulated by deformation during the phase transformation of a thin film shape memory alloy for injecting the recording solution, thereby enabling to manufacture products of small size and simplifying a fabricating process thereof.
2. Description of the Prior Art
Widely available print heads generally utilize a Drop On Demand (DOD) system. The DOD system has been increasingly employed since the printing operation is easily performed by instantaneously injecting bubbles of recording solution under the atmospheric pressure neither requiring the charge or deflection of the bubbles of the recording solution nor demanding high pressure. A heating- type injecting method using a resistor and a vibrating-type injecting method using a piezo-electric device may be given as the representative injecting principles.
FIG. 1 is a view for explaining the heating-type injecting method, in which a chamber al retains a recording solution therein, an injection hole a2 directing from chamber al toward a recorded medium is provided, and a resistor a3 is embedded into the bottom of chamber al to be opposite to injection hole a2 to incite expansion of air. By this construction, the air bubbles 1 is expanding by resistor a3 are to forcibly push the recording solution within the interior of chamber al through injection hole a2, and the recording solution is injected toward the recorded medium by the pushing force.
In terms of the thermal-type injecting method, however, the recording solution is heated to cause a chemical change. Furthermore, the recording solution adversely adheres onto the inner circumference of injection hole a2 to clog it. In addition to a drawback of short durability of the heatemitting resistor, the water-soluble recording solution should be utilized to degrade maintainability of a document.
FIG. 2 is a view for explaining the vibrating-type injecting method by means of the piezo-electric device, which is constructed by a chamber bl for retaining a recording solution, an injection hole b2 directing from chamber bl toward a recorded medium, and a piezo transducer b3 buried into the bottom of the opposite side of injection hole b2 for inciting vibration.
once piezo transducer b3 incites vibration at the bottom of chamber bi, the recording solution is forcibly pushed out through injection hole b2 by the vibrating force. Consequently, the recording solution is injected onto the recorded medium by the vibrating force.
Without using the heat, the injecting method by means of the vibration of the piezo transducer is advantageous of selecting a variety of recording solutions. However, the processing of the piezo transducer is difficult and, especially, the installing of the piezo transducer attached to the bottom of chamber bi is a demanding job to be detrimental to mass production.
2 1 Additionally, the conventional print head employs a shape memory alloy for issuing the recording solution. Japanese Laidopen Patent Publication Nos. sho 57-203177, sho 63-57251, hei 4247680, hei 2-265752, hei 2-308466 and hei 3-65349 disclose examples of print heads employed with shape memory alloys. The conventional examples are constructed to be bendingdeformed by joining several sheets of shape memory alloys respectively having different phase transforming temperatures and different thicknesses or by joining an elastic member with a shape memory alloy.
However, the conventional print head using the shape memory alloy involves a difficulty in shrinking the head dimension, an inferior nozzle compactness to degrade resolution and a demanding job in its fabrication to negatively affect mass production. Also, the shape memory alloy used therein is embodied by a thick layer having a thickness of more than 50pm instead of incorporating with a thin film. Therefore, it dissipates greater electric power during a heating operation and requires longer cooling time to be disadvantageous of resulting in degraded operating frequency and slow printing speed to have no practical use, etc.
SUMMARY OF THE INVENTION
The present invention is developed to solve the aboveenumerated conventional problems. Accordingly, it is an object of the present invention to provide an apparatus and method for injecting a recording solution of a print head, wherein the recording solution is injected while a pressure of a liquid chamber is varied by deformation induced during the phase 3 is transforming procedure of a thin film shape memory alloy, so that the shape memory alloy has a considerably great actuating force to decrease the clogging of a nozzle, and the thin film has so large deforming quantity to fabricate the thin film shape memory alloy in small size, thereby heightening the compactness of the nozzle to enhance resolution. Also, the shape memory alloy under the thin film state is deposited on a substrate by using a semiconductor thin film fabricating process to be able to obtain the required displacement quantity, thereby enhancing mass productivity.
To achieve the above object of the present invention, there is provided an apparatus for injecting a recording solution of a print head including thin film shape memory alloys phasetransformed in accordance with a temperature variation, and an electric power supply section for inciting the temperature variation of the thin film shape memory alloy. Also, a passage plate installed to one side of the thin film shape memory alloys is formed with liquid chambers for retaining the recording solution and a feed path in one sides of wall planes surrounding the liquid chambers for introducing the recording solution, and a nozzle plate installed over the passage plate is formed with nozzles having dimensions smaller than those of the liquid chambers of the passage plate for enabling the recording solution to be injected in the form of droplet when the phase of the thin film shape memory alloy is transformed.
The present invention is contrived for solving the drawbacks of the conventional systems of using the piezo-electric device and air expansion by heating and of the conventional system of 4 cl is using the shape memory alloy. Thus, the the thin film shape memory alloy is formed on a substrate via a semiconductor thin film fabricating process, and the substrate is partially etched to provide a space portion for allowing the thin film shape memory alloy to vibrate. In turn, the droplet is formed by the vibration of the thin film shape memory alloy.
In this injecting apparatus, the shape memory alloy is deposited onto the substrate via the semiconductor thin film fabricating process, and the resultant structure is annealed to form the thin film shape memory alloy. Therefore, the flat form can be obtained in an austenite. Also, the deposited thin film shape memory alloy may be provided with a residual compressive stress in a martensite, and a magnitude thereof may be varied in accordance with the deposition condition annealing temperature and time. once the substrate is partially etched to form the space portion, the thin film shape memory alloy is bendingdeformed by the buckling resulting from the residual compressive stress. When the thin film shape memory alloy is heated, the thin film shape memory alloy becomes the austenite to be changed into the flattened state. At this time, the volume of the liquid chamber is decreased to inject the recording solution. During the cooling operation, the bending deformation occurs due to the residual compressive stress and, at this time, the refilling of the recording solution is executed. These steps are repeated to successively carry out the injection of the recording solution.
According to the present invention, the simplified thin film shape memory alloy is embodied via the semiconductor thin film fabricating process and substrate etching process, and the 5 residual compressive stress is utilized to easily acquire the displacement required for injecting the recording solution, thus significantly enhancing the mass production. In addition, the magnitude of the residual stress can be changed to easily regulate the deforming quantity, which also permits the displacement quantity to increase, making it possible to reduce the dimensions of the thin film shape memory alloy. Consequently, the head can be formed to be small in size and the compactness of the nozzles is heightened to attain the high resolution.
Furthermore, the thin film shape memory alloy is utilized in the present invention to greatly cut down the power dissipation when performing the heating operation and to quicken the cooling time. Additionally, no residual vibration occurs when the thin film shape memory alloy is buckled to the bending- deformed state by the residual compressive stress after injecting the recording solution, thereby being capable of performing stabilized injection of the recording solution with the consequence of increasing the operating frequency, i.e., enhancing the printing speed.
BRIEF DESCRIPTION OF THE DRAWINGS
The above objects and other advantages of the present invention will become more apparent by describing in detail preferred embodiments thereof with reference to the attached drawings in which:
FIG. 1 is a sectional view showing a conventional thermaltype injecting apparatus; FIG. 2 is a sectional view showing a conventional piezoelectric type injecting apparatus; 6 is FIG. 3 is an exploded perspective view showing an injecting apparatus according to one embodiment of the present invention; FIG. 4 is a perspective view showing the flow of a recording injecting invention; FIG. 6 is side section views showing the injecting apparatus according to one embodiment of the present invention, in which FIGS. 6A to 6D illustrate the states of being before/after the operation; FIG. 7 is a graph representation plotting the phase transformation of a thin film shape memory alloy according to the present invention; FIG. 8 is views for showing a fabricating process of the one-way thin film shape memory alloy according to the present invention; FIG. 9 is a block diagram for showing the fabricating process of the one- way thin film shape memory alloy according to the present invention; FIG. 10 is views for showing a fabricating process of the two-way thin film shape memory alloy according to the present invention; FIG. 11 is a block diagram for showing the fabricating process of the two- way thin film shape memory alloy according to the present invention; FIG. 12 is a graph representation plotting the heating time and temperature of the thin film shape memory alloy according to 7 solution according to one embodiment of the present invention; FIGS. SA and 5B are front section views showing the apparatus according to one embodiment of the present the present invention; FIG. 13 is a sectional view showing the size of the thin film shape memory alloy according to the present invention; and FIG. 14 is sectional views showing the injecting apparatus according to another embodiment of the present invention, in which FIGS. 14A to 14D illustrate the states of being before/after the operation.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
FIG. 3 is an exploded perspective view showing an injecting apparatus according to one embodiment of the present invention, and FIG. 4 is a perspective view showing the flow of a recording solution according to one embodiment of the present invention. The injecting apparatus according to the present invention is constructed such that a plurality of nozzles 19 for injecting a recording solution 20 are arranged in both rows and columns to heighten resolution, and thin film shape memory alloys 12 for substantially injecting recording solution 20 correspond to respective nozzles 19 one by one.
In more detail, a plurality of space portions 11 are provided to the front and rear sides of a substrate 10 while penetrating therethrough in the up and down direction, and plurality of thin film shape memory alloys 12 are joined to the upper portion of substrate 10 for covering respective space portions 11. A passage plate 13 covers the upper portion of substrate 10, which is formed with liquid chambers 14 for retaining recording solution 20 at the direct upper portions of corresponding thin film shape memory alloys 12. Also, a feed path 15 for flowing recording solution 20 therethrough is provided 8 is into the center of passage plate 13 in such a manner that feed path 15 is mutually communicated with corresponding liquid chamber 14 via flow passages 16. A pouring entrance 17 communicated with feed path 15 at one side of passage plate 13 is provided to one side of substrate 10 for supplying recording solution 20 toward feed path 15.
A nozzle plate 18 is joined to the upper portion of passage plate 13, which is formed with plurality of nozzles 19 corresponding to respective liquid chambers 14 formed into passage plate 13. Respective nozzles 19 correspond to thin film shape memory alloys 12 exposed to corresponding liquid chamber sides. Thus, while the pressure of corresponding liquid chambers 14 is changed when thin film shape memory alloys 12 are deformed, recording solution 20 is injected through respective nozzles 19 in the state of droplet onto a sheet of printing paper.
The phase of thin film shape memory alloy 12 is successively transformed in accordance with a temperature variation. During the phase transforming procedure, vibration occurs by deformation and recording solution 20 is injected through respective nozzles 19 in the form of droplet. FIGS. 6A to 6D are side section views showing the injecting apparatus according to one embodiment of the present invention, which are illustrated by taking away any one thin film shape memory alloy. When thin film shape memory alloy 12 under the initial state of being deformed to bulge to the opposite side of nozzle 19 is heated to be over a preset temperature, it is to be flattened while being transformed into the parent phase. At this time, the internal pressure of liquid chamber 14 is increased to be compressed, and, simultaneously, 9 recording solution 20 is injected via nozzle 19. Once the temperature of thin film shape memory alloy 12 is dropped down to be below a preset temperature, it is buckled to its bendingdeformed state by the residual compressive stress, and recording solution 20 is introduced into the interior of liquid chamber 14 by the capillary force of recording solution in nozzle and inhaling force while the internal pressure of liquid chamber 14 is gradually lowered. Then, the above-described process is successively repeated to perform the printing operation.
Also, thin f ilm shape memory alloy 12 is heated by an electric power supply section 21 as shown in FIG. 5A. That is, once the electric power of electric power supply section 21 is applied to electrodes 21a connected to both ends of thin film shape memory alloy 12, thin film shape memory alloy 12 generates heat by its own resistance to have the temperature raised and is flattened while being changed into the parent phase. Unless the electric power is applied to electric power supply section 21, thin film shape memory alloy 12 naturally cools down to be buckled into the original bulging state by the residual compressive stress. Alternatively, a heater 21b heated by the electric power applied from electric power supply section 21 may be directly attached to one side of thin film shape memory alloy 12 as shown in FIG. 5B to heat thin film shape memory alloy 12.
Such thin film shape memory alloy 12 is composed of a shape memory alloy with a phase transformed in accordance with a temperature to incite the deformation, which is mainly formed of titanium (Ti) and nickel (Ni) having a thickness of about 0.3pm - 5pm. Thin film shape memory alloy 12 consisting of the shape 10 is memory alloy has a directional property in accordance with the fabricating method. FIG. 8 and FIG. 9 are views and a block diagram showing a fabricating method of the one-way thin film shape memory alloy according to the present invention. The views shown in FIGS. 3 to 6 are obtained by using the one-way thin film shape memory alloy. Here, a step 100 is performed by depositing thin film shape memory alloy onto substrate 10 composed of a substance such as silicon. The deposition is generally carried out by means of a sputter-deposition and laser ablation methods.
In step 101, the resultant structure is annealed at a regular temperature for a given period of time to be crystallized, thereby being the flat plate form in the parent phase. Thereafter, it is cooled down to be approximately 400C 700C being a martensite finishing temperature Mf, so that the parent phase becomes a martensite to afford the residual compressive stress to thin film shape memory alloy 12 in step 102.
In addition, the direct lower portion of thin film shape memory alloy 12 is etched to provide space portion 11 into substrate 10 formed of the silicon wafer, and thin film shape memory alloy 12 is externally exposed in step 103. Thereafter, thin film shape memory alloy 12 is bendingdeformed toward lower portion (or upper portion) by the residual compressive stress to realize the state as shown in FIG. 6A in step 104. In step 105, once thin film shape memory alloy 12 bending- deformed at the martensite is heated by a preset temperature, i.e., an austenite finishing temperature Af of approximately 500C - 900C, thin film 11 shape memory alloy 12 is deformed into the austenite to be flattened as shown in FIG. 6C, injecting recording solution 20. After this, thin film shape memory alloy 12 is cooled down to be transformed into the martensite, which is in turn bendingdeformed by the residual compressive stress. Thus, the interior of liquid chamber 14 is refilled with recording solution 20 in step 106. While the foregoing steps 105 and 106 are repeated in accordance with the change of temperature of thin film shape memory alloy 12, the printing operation is performed in step 107.
FIGS. 10 to 11 are a processing view and a block diagram showing a fabricating method of the two-way thin film shape memory alloy according to the present invention. Here, thin film shape memory alloy 12 is annealed at a regular temperature for a given period of time to be crystallized within a chamber 22, thereby being changed into the austenite in step 200. Then, upon the cooling down to be below the martensite finishing temperature Mf of approximately 400C - 700C, the austenite is changed into the martensite in step 201. Also, in step 202, the martensite is deformed by being applied with an external force within an extent of inhibiting a plastic sliding thereon. If thin film shape memory alloy 12 is heated by the austenite finishing temperature Af of approximately 500C - 900C, the martensite is transformed into the austenite to be flattened in step 203.
Thereafter, the above-described steps 201, 202 and 203 are repeated several times to train thin film shape memory alloy 12. By doing so, regardless of the lack of the external force, thin film shape memory alloy 12 is deformed in step 205 when the temperature is dropped down to be below the martensite finishing 12 temperature Mf in training step 204. Reversely, thin film shape memory alloy 12 is flattened when being heated by austenite finishing temperature Af, thereby injecting recording solution 20 in step 206. If thin film shape memory alloy 12 is cooled to be the martensite, it is bending- deformed by its own force to refill the interior of liquid chamber 14 with recording solution 20 in step 207. In step 208, above- stated steps 206 and 207 are repeated in accordance with the temperature variation of thin film shape memory alloy 12 to perform the printing operation during the aforementioned process. In other words, thin film shape memory alloy 12 activates the two-way reciprocating motion according to the temperature to inject recording solution. In addition to this, the bending deforming quantity of the two-way thin film is decided in accordance with the extent of applying the external force during the fabricating process thereof to make it possible to easily embody the displacement quantity required.
Thin film 12 having the two-way directional property may be applied to one embodiment of the present invention as shown in FIG. 6. For example, space portion 11 is formed to one side of substrate 10, and trained thin film shape memory alloy 12 is coupled to substrate 10. At this time, by fixing thin film shape memory alloy 12 to one side of substrate 10 while covering space portion 11, recording solution 20 can be injected while thin film shape memory alloy 12 is deformed by centering about space portion 11 when the temperature is varied.
Since thin film shape memory alloy 12 according to the present invention is flattened at the austenite and is bendingdeformed at the martensite in accordance with the temperature 13 variation, the frequency (i.e., operating frequency) of thin film shape memory alloy 12 is increased as the temperature difference becomes smaller. For this reason, copper Cu may be added into the alloy of Ti and Ni for decreasing the temperature difference which transforms the phase. The shape memory alloy using Ti & Ni and Cu decreases the phase - transforming temperature variation to increase the frequency, i.e., the operating frequency, of thin film shape memory alloy 12, thereby heightening the printing speed.
The possibility of embodying the droplet of the thin film according to the present invention formed as above is interpreted as follows.
Assuming that the diameter of the droplet is 60gm produced in case that an energy density W. generated by thin f ilm shape memory alloy 12 is 1OX106j/M3 in maximum and the volume V of thin film shape memory alloy 12 is 200x2 00XltM3, the injectability of the thin film is judged as below:
U - US+ UK U, = TrR 2V UX = 1 ITr)R 3V2 12 where a reference symbol U denotes the energy required for generating the desired droplet of the recording solution; U, a surface energy of the recording solution; UK, a kinetic energy of the recording solution; R, a diameter of the droplet; v, velocity of the recording solution; p, a density of the recording solution (1000k9/M3); and -y, a surface tension (0.073N/m) of the recording solution. Here, providing that the velocity of the desired 14 is droplet is i0m/sec, required energy U can be written as:
U = 2.06xlO-10+7.07xlO-1-0=9.13xlO-10J Also, the maximum energy generated by thin film shape memory alloy 12 is defined by W. = W, -V (where Wv denotes the energy j/M3 exercisable per unit volume of the thin film shape memory alloy, and V denotes the volume of the thin film shape memory alloy). That is, W", (IOX106) -(200x2OOxl) 4 X10-7j When the diameter of the droplet is 10OAm, required energy U equals 3. 85xlO-9J.
Therefore, since W,,, >- U, the droplet of desired dimensions can be embodied. In other words, since thin film shape memory alloy 12 has the considerably great actuating force, the desired droplet of the recording solution can be easily embodied.
Furthermore, the displacement quantity resulting from the heating time, dissipated energy and residual compressive stress of one embodiment of the present invention can be analyzed as follows. The electric power is applied to thin film shape memory alloy 12 to generate the heat by the resistance and the phase is to be transformed by the heat generated, only that the heating time and dissipated energy until thin film shape memory alloy 12 of 250C is heated to be the austenite of 700C are obtained as below.
Here, a substance of the thin film shape memory alloy is TiNi; a length 1 of the thin film shape memory alloy is 40OAm; a density p. of the thin film shape memory alloy is 6450kg /M3 and is quantity of the temperature variation AT is 450C by 70 minus 25. Also, a specific heat CP is 230J/K9OC; a specific resistance p of the thin film shape memory alloy is 80g.cm; applied current I is 1.0A; a width w of the thin film shape memory alloy is 30Ogm; and a height t of the thin film shape memory alloy is 1.Ogm. Accordingly, heating time th 'S obtained by t,h = PA TCP ( A7.t) 2 P.12 = 7.41Asec is Thus, since resistance R of the thin film shape memory alloy, i.e., p(f/w. t) equals 1.10 and dissipated electric power J2 R is 1.1 Watt, the energy required for generating the droplet is obtained by:
heating time x dissipated electric power = 8.1 gJ Therefore, the energy required for producing the droplet by injecting recording solution 20 is roughly 8.lgi which is decreased to be smaller than the conventional energy dissipation of 20gJ that has been required for the thermal type Ink-jet system.
FIG. 12 is a graph representation plotting the heating time and temperature of the thin film shape memory alloy according to the present invention, in which the material values for performing the experiment are as follows.
Here, the thickness of thin film shape memory alloy 12 is lMm and the surrounding temperature is 250C.
16 0 11 16 21 Recording Air Thin film Substrate solution(water) (TiNi) (Si) Density (kg/ml) 1000 1 6400 2330 Specific heat 4179 1000 230 890 (J/kg-k) Coefficient of 0.566 0.026 23 124 heat transfer Under the state that the surrounding temperature is 250C, the time required for heating thin film shape memory alloy 12 up to 700C to be transited into the austenite to cool down it to 300C is roughly 20OAsec which is approximately 5kHz when being calculated in terms of the frequency. Accordingly, the operating frequency of the print head is 5kHz or so. However, since the temperature of completely finishing the deformation (the martensite finishing temperature) is about 450C, there is no need to wait for being cooled down to 300C but it can be heated again in advance to be able to continuously inject recording solution 20. Due to this fact, the operating frequency can be heightened to over 5kHz. Once the operating frequency is large, the printing speed becomes increased.
Also, the displacement quantity in accordance with residual compressive stress of the thin film shape memory alloy can be analyzed as follows with reference to FIG. 13.
Assuming that a = b and a=20OAm when the substance of the thin film shape memory alloy is TiNi, Youngs modulus E,,, of the thin film shape memory alloy is 30GPa, residual compressive stress S exerted upon the thin film shape memory alloy is 30MPa, Poisson's ratio v is 0.3, the length of the thin film shape memory alloy exposed to space portion 11 is denoted by a, the 17 is (D thickness of the thin film shape memory alloy is denoted by h and the width of the thin film shape memory alloy exposed to space portion 11 is denoted by b, a critical stress Scr Of the thin film shape memory alloy is written as:
2 M EM 4.38 a 2 1 -v2 (1) ' thus S, = 3AMPa and the central displacement 6. of the thin film shape memory alloy is defined such that:
6,m = 2.298h (2) and S= = 6.2gm The total energy Um generated when the thin film shape memory alloy is buckled is written as:
2 3 2 5 0 0 D2hl 1)2 here D U. 33a 2 ( Scr thus U = 2.8x10-10J m 12(1 V2).
The total energy generated when the thin film shape memory alloy is buckled after injecting recording solution 20 is changed into buckling force P which incites the bending - def ormat ion of the thin film shape memory alloy. Buckling force P is written as 18 0 below.
U. = P - &V Since AV (volume variation) (65 a 2) /4 = 6.2 X10-14M3, buckling force P is 4.5KPa.
Supposing that half the total volume variation effected by the bending deformation of the thin film shape memory alloy is injected, the droplet of 39gm is formed.
The displacement quantity with respect to the thickness and dimension of the thin film shape memory alloy is represented as the following table, in which the corresponding unit is pm.
is axbxh. 300x12OxO.5 400x12OxO.5 600x12OxO.5 Displacement quantity 4.54.5 4 axbxh. 300x15OxO.5 400x15OxO.5 600x15OxO.5 Displacement quantity 5.7 5.7 5.7 axbxh. 300x20OxO.5 400x20OxO.5 600x20OxO.5 Displacement quantity 7.4 7.6_ 7.6 axbxh 300x120xl.0 400x120xl.0 600x150xl.0 Displacement quantity 4.0 4.0 4.0 axbxh. 300x150xl.0 400x150xl.0 600x150xl.0 1 Displacement quantity s.3 5.3 5.3 axbxh,. 300x200xl.0 400x200xl.0 600x200xl.0 quantityl Displacement 7.1 7.4 7.4 axbxh. 300x120xl.5 400x120xl.5 600x120xl.5 Displacement quantity 3.1 3.1 3.1 axbxh. 300x150xl.5 400x150xl.5 600x150xl.5 Displacement quantity 4.6 4.6 4.6 axbxh,, 3 0x200xl.5 400x200xl.5 x200xl.5 quantityl Displacement 6.7 6.9 6.9 FIG. 14 are sectional views showing the injecting apparatus 19 is C,, according to another embodiment of the present invention, in which like parts of FIG. 3 are designated by the same reference numerals for description. The another embodiment of the present invention is provided with a passage plate 13 and a nozzle plate 18 to the lower portion of a substrate 10, which are illustrated by taking away any one thin film shape memory alloy coupled. A space portion 11 is provided into substrate 10 while penetrating therethrough in the up and down direction, and a thin film shape memory alloy 12 is joined to the upper portion of substrate 10 for covering space portion 11. Passage plate 13 covers the lower portion of substrate 10, which is formed with a liquid chamber 14 for retaining recording solution 20 by corresponding to space portion 11.
Also, nozzle plate 18 joined to the lower portion of passage plate 13 is provided with a nozzle 19 corresponding to liquid chamber 14 formed into passage plate 13. Nozzle 19 corresponds to thin film shape memory alloy 12 exposed toward liquid chamber 14. Thus, while the pressure of liquid chamber 14 is changed when thin film shape memory alloy 12 is deformed, recording solution 20 is injected onto a sheet of paper in the form of droplet via nozzle 19.
The another embodiment of the present invention constructed as above has the structure identical to that of the thin film shape memory alloy of one embodiment of the present invention. At this tim, thin film shape memory alloy 12 has one-way and two-way properties in association with the fabricating process, of which phase is transformed to be deformed in accordance with the temperature variation. During this processing, recording solution 20 stored in liquid chamber 14 and space portion 11 is injected onto the sheet of paper in the form of droplet via nozzle 19. In another embodiment of the present invention, recording solution 20 is retained within space portion 11 formed in substrate 10. Here, liquid chambers 15 and flow passages 16 can be easily formed in substrate 10.
In the injecting apparatus according to the present invention as described above, the thin film shape memory alloy for injecting the recording solution involves the phase transformation in accordance with the temperature variation, and the recording solution is injected by the deformation incurred during the phase transformation. The thin film shape memory alloy has the great displacement quantity to make it possible to shrink respective space portions formed in the substrate and respective liquid chambers formed in the passage plate. Thus, the print head is decreased in overall size and is fabricated in small size, so that the compactness of the nozzles is heightened to be favorable to the attainment of high resolution. Furthermore, the actuating force is so large to increase the force of pushing out the recording solution with the consequence of decreasing the clogging of the nozzle to enhance reliability. Moreover, the dimensions of the droplet of the recording solution can be sufficiently shrunken to be advantageous in accomplishing high picture quality. Additionally, the driving voltage is below 10 volts to facilitate the designing and fabricating of the driving circuit, and the thin film shape memory alloy serving as a warping plate is easily embodied on the substrate formed of silicon, glass, metal plate, polymer and the like via the typical 21 semiconductor process and etching process to be effective in enhancing the mass productivity and simplifying the structure thereof.
While the present invention has been particularly shown and described with reference to particular embodiment thereof, it will be understood by those skilled in the art that various changes in form and details may be effected therein without departing from the spirit and scope of the invention as defined by the appended claims.
22 is
Claims (18)
- (D WHAT IS CLAIMED IS: 1. An apparatus for injecting a recording solutionof a print head comprising: thin film shape memory alloy phasetransformed accordance with a temperature variation; an electric power supply section for inciting said temperature variation of said thin film shape memory alloy; a passage plate installed to one side of said thin film shape memory alloy.-., formed with liquid chambers for retaining said recording solution and formed with a feed path in one sides of wall planes surrounding said liquid chambers for introducing said recording solution; and a nozzle plate installed over said passage plate and formed with nozzles having dimensions smaller than those of said liquid chambers of said passage plate for enabling said recording solution to be injected in the form of droplet when said phase of said thin film shape memory alloy is transformed.
- 2. An apparatus for injecting a recording solution of a print head as claimed in claim 1, wherein said thin film shape memory alloy is comprised of said shape memory alloy, using titanium (Ti) and nickel (Ni) as main substances.
- 3. An apparatus for injecting a recording solution of a print head as claimed in claim 2, wherein said thin film shape memory alloy is comprised of said shape memory alloy further added with copper (Cu) for heightening an operating frequency by reducing a temperature difference which incites the phase transformation.
- 4. An apparatus for injecting a recording solution of a print head as claimed in claim 1, wherein said thin film shape memory 23 in alloy has a thickness of about 0.3Am to 5Am.
- S. An apparatus for injecting a recording solution of a print head as claimed in claim 1, wherein said electric power supply section comprises electrodes connected to both ends of said thin film shape memory alloy for permitting said thin film shape memory alloy to generate heat by its own resistance.
- 6. An apparatus for injecting a recording solution of a print head as claimed in claim 1, wherein said electric power supply section comprises a heater attached to one side of said thin film shape memory alloy for being heated by using the supplied electric power.
- 7. An apparatus for injecting a recording solution of a print head as claimed in claim 7, further comprising a substrate installed under said thin film shape memory alloy and having said space portion for allowing said thin film shape memory alloy to phase-transform.
- S. An apparatus for injecting a recording solution of a print head as claimed in claim 7, wherein said substrate is comprised of a silicon substance.
- 9. An apparatus for injecting a recording solution of a print head as claimed in claim 7, wherein an area of said thin f ilm shape memory alloy substantially phase-transformed by being exposed to said space portion has a width ranging from 10OAm to 30OAm and a length ranging from 10OAm to 50OAm.
- 10. An apparatus for injecting a recording solution of a print head as claimed in claim 1, wherein said thin film shape memory alloy is changed into the form of a flat plate to inject said recording solution via said nozzle when being heated by over an 24 is 11- austenite finishing temperature to be transformed into an austenite, and is bending-deformed by said residual compressive stress to refill said liquid chamber with said recording solution when being cooled down by below a martensite finishing temperature to be transformed into a martensite.
- 11. An apparatus for injecting a recording solution of a print head as claimed in claim 10, wherein said austenite finishing temperature is approximately 500C to 900C, and said martensite finishing temperature is approximately 400C to 700C.
- 12. An apparatus for injecting a recording solution of a print head as claimed in claim 10, wherein the time required for cooling down said thin film shape memory alloy to be said martensite after heating said austenite is shorter than approximately 20OAsec and said operating frequency is SkHz and higher.
- 13. An apparatus for injecting a recording solution of a print head as claimed in claim 1, wherein said thin film shape memory alloy is changed into the form of a flat plate to inject said recording solution via said nozzle when being heated by over an austenite finishing temperature to be transformed into an austenite, and is bending - deformed by training to refill said liquid chamber with said recording solution when being cooled down by a martensite finishing temperature to be transformed into a martensite.
- 14. An apparatus for injecting a recording solution of a print head as claimed in claim 13, wherein, after said thin film shape memory alloy is trained by applying an external force several times when said thin film is of said martensite, said martensite 25 is formed in a specific direction to have a desired displacement when being cooled down to below said martensite finishing temperature.
- 15. An apparatus for injecting a recording solution of a print head as claimed in claim 13, wherein said austenite finishing temperature is approximately 500C to 900C, and said martensite finishing temperature is approximately 400C to 700C.
- 16. An apparatus for injecting a recording solution of a print head as claimed in claim 13, wherein the time required for cooling down to be said martensite after heating by said austenite is shorter than approximately 20OAsec and said operating frequency is 5kHz and higher.
- 17. A method for producing an injecting apparatus of recording solution of a print head comprising: a step of depositing a thin film shape memory alloy on a substrate; a step of performing an annealing upon said thin film shape memory alloy to crystalize, making a flat plate memorize as a parent phase; a step of etching said substrate to expose a portion of said thin film shape memory alloy; and a step of bending- deforming the exposed portion of said thin film shape memory alloy by said residual compressive stress; whereby said steps, injecting said recording solution while said thin film shape memory alloy is heated to be changed into an austenite; and refilling the inside of a liquid chamber with said recording solution while said thin film shape memory alloy is bending- 26 deformed by said residual compressive stress when being cooled to be changed into said martensite.
- 18. A method for producing an injecting apparatus of recording solution of a print head comprising:a step of depositing a thin f ilm shape memory alloy on a substrate, and performing an annealing upon said thin film shape memory alloy to be crystallized; a step of partially etching said substrate to expose a portion of thin film shape memory alloy; step of applying an external force upon said thin film shape memory alloy to bending-deform it; step of heating said thin film shape memory alloy to be flattened at an austenite; a step of training said thin film shape memory alloy by repeating said cooling, deforming and heating steps several times; and a step of bending -deforming said thin film shape memory alloy subjected to said training step by its own force when being cooled to be changed into said martensite; whereby said steps, injecting said recording solution while said thin film shape memory alloy is heated to be changed into said austenite; and a step of refilling the inside of a liquid chamber with said recording solution by the bending deformation when said thin film shape memory alloy is cooled to be changed into said martensite.27
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR19970007642 | 1997-03-07 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9724165D0 GB9724165D0 (en) | 1998-01-14 |
| GB2322831A true GB2322831A (en) | 1998-09-09 |
| GB2322831B GB2322831B (en) | 2001-10-10 |
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ID=19499025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9724165A Expired - Fee Related GB2322831B (en) | 1997-03-07 | 1997-11-14 | Apparatus and method for ejecting a recording solution of a print head |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2927764B2 (en) |
| KR (1) | KR100221459B1 (en) |
| CN (1) | CN1192962A (en) |
| DE (1) | DE19751790C2 (en) |
| FR (1) | FR2760404A1 (en) |
| GB (1) | GB2322831B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1149705A1 (en) * | 2000-04-26 | 2001-10-31 | Samsung Electronics Co., Ltd. | Bubble-jet type ink-jet printhead, manufacturing method thereof, and ink ejection method |
| US6340223B1 (en) | 1999-06-28 | 2002-01-22 | Sharp Kabushiki Kaisha | Ink-jet head and fabrication method of the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100645426B1 (en) * | 2000-09-29 | 2006-12-19 | 삼성전자주식회사 | Ink-jet printer head |
| CN105107670A (en) * | 2015-09-17 | 2015-12-02 | 厦门理工学院 | Driving type liquid micro-jet method and device for memory metal |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57203177A (en) | 1981-06-09 | 1982-12-13 | Fujitsu Ltd | Character recognizing system |
| JPS5993356A (en) * | 1982-11-18 | 1984-05-29 | Sanyo Electric Co Ltd | Ink head |
| JPS6357251A (en) | 1986-08-28 | 1988-03-11 | Fujitsu Ltd | Ink jet head |
| JPH02265752A (en) | 1989-04-05 | 1990-10-30 | Matsushita Electric Ind Co Ltd | Ink-jet recording head |
| JPH02308466A (en) | 1989-05-23 | 1990-12-21 | Matsushita Electric Ind Co Ltd | Disk clamper |
| JPH0365349A (en) | 1989-08-03 | 1991-03-20 | Matsushita Electric Ind Co Ltd | Ink jet head |
| EP0678384B1 (en) * | 1990-02-23 | 1997-08-20 | Seiko Epson Corporation | Drop-on-demand ink-jet printing head |
| JPH04247680A (en) | 1991-02-04 | 1992-09-03 | Toshiba Corp | Substrate projection portion cutting device |
| US5666141A (en) * | 1993-07-13 | 1997-09-09 | Sharp Kabushiki Kaisha | Ink jet head and a method of manufacturing thereof |
-
1997
- 1997-05-27 KR KR1019970020896A patent/KR100221459B1/en not_active IP Right Cessation
- 1997-11-14 FR FR9714304A patent/FR2760404A1/en active Pending
- 1997-11-14 GB GB9724165A patent/GB2322831B/en not_active Expired - Fee Related
- 1997-11-14 CN CN97122124A patent/CN1192962A/en active Pending
- 1997-11-21 JP JP9321278A patent/JP2927764B2/en not_active Expired - Fee Related
- 1997-11-21 DE DE19751790A patent/DE19751790C2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6340223B1 (en) | 1999-06-28 | 2002-01-22 | Sharp Kabushiki Kaisha | Ink-jet head and fabrication method of the same |
| EP1149705A1 (en) * | 2000-04-26 | 2001-10-31 | Samsung Electronics Co., Ltd. | Bubble-jet type ink-jet printhead, manufacturing method thereof, and ink ejection method |
| US6499832B2 (en) | 2000-04-26 | 2002-12-31 | Samsung Electronics Co., Ltd. | Bubble-jet type ink-jet printhead capable of preventing a backflow of ink |
| US6685846B2 (en) | 2000-04-26 | 2004-02-03 | Samsung Electronics Co., Ltd. | Bubble-jet type ink-jet printhead, manufacturing method thereof, and ink ejection method |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2322831B (en) | 2001-10-10 |
| JP2927764B2 (en) | 1999-07-28 |
| JPH10250075A (en) | 1998-09-22 |
| KR100221459B1 (en) | 1999-09-15 |
| KR19980079246A (en) | 1998-11-25 |
| GB9724165D0 (en) | 1998-01-14 |
| DE19751790C2 (en) | 1999-08-05 |
| DE19751790A1 (en) | 1998-09-17 |
| CN1192962A (en) | 1998-09-16 |
| FR2760404A1 (en) | 1998-09-11 |
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Effective date: 20091114 |