GB2030766A - Laser treatment of semiconductor material - Google Patents
Laser treatment of semiconductor material Download PDFInfo
- Publication number
- GB2030766A GB2030766A GB7930141A GB7930141A GB2030766A GB 2030766 A GB2030766 A GB 2030766A GB 7930141 A GB7930141 A GB 7930141A GB 7930141 A GB7930141 A GB 7930141A GB 2030766 A GB2030766 A GB 2030766A
- Authority
- GB
- United Kingdom
- Prior art keywords
- amorphous
- layers
- layer
- amorphous material
- treating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 title claims abstract description 28
- 238000013532 laser treatment Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000000354 decomposition reaction Methods 0.000 claims description 2
- 230000007547 defect Effects 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 229910005540 GaP Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 21
- 210000004027 cell Anatomy 0.000 description 19
- 230000004888 barrier function Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 210000002457 barrier cell Anatomy 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
- C23C26/02—Coating not provided for in groups C23C2/00 - C23C24/00 applying molten material to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1872—Recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
Abstract
A layer or layers of amorphous material deposited on a non-crystalline amorphous substrate are subjected to treatment by exposure to a laser beam. The treatment may either recrystallise or anneal the amorphous material depending on the laser power and improves its suitability for such devices as solar cells by improving the life times and diffusion lengths within the material as compared to the untreated material. The use of P type SiC or polycrystalline silicon on superposed i and n type amorphous silicon layers to improve the transmissivity of the outer layers of solar cells, and the use of varying composition SiC layers for visible light emission devices are also disclosed.
Description
SPECIFICATION
Improvements in or relating to solar cells and other devices.
The present invention relates to method of treatment of amorphous material layers to make them more suitable for the production of solar cells and other similar devices and to the solar cells and or other devices produced using the treated materials.
The possible use of thin film amorphous materials for solar cells, (or other devices such as p-n junctions, Schottky diodes, zener diodes) integrated into large area systems such as displays is extremely attractive due to the relatively low cost in terms of materials and energy. A disadvantage however, is that device performance has previously been severely limited by the short life times and diffusion lengths typical of amorphous materials. For example, the present state of the art A.M.I.
efficiencies for polycrystalline silicon solar cells is about 10% which is a factor of 2 higher than the best cell produced with amorophous material.
It is an object of the present invention to produce a treated layer of amorphous material which is substantially superior to that known at present and thus to be able to combine the advantages in terms of the low cost and large area capability of amorphous thin film with the superior device performance of the polycrystalline material.
According to the present invention there is provided a method of treating one or more layers of amorphous material deposited on a non-crystalline substrate, to improve the suitability of the material for use in solar cells or similar devices as hereinbefore defined, by subjecting the layer of amorphous material to exposure by a laser.
The present invention also provides an amorphous silicon solar cell comprising an upper layer of p type SixCi -x an intermediate layer of i,-Si and a lower layer of n Si on a suitable substrate.
The invention also provides an amorphous silicon solar cell comprising an upper layer of p type polycrystalline silicon an intermediate layer of i -Si and a lower layer of n Si on a suitable substrate.
In a preferred embodiment the amorphous material is silicon.
Embodiments of the present invention will now be described, by way of example with reference to the accompanying drawings, in which:
Figure 1 shows a conventional schottky barrier cell,
Figure 2 shows a conventional P-i-n barrier cell,
Figure 3 shows a first solar cell heterostructure according to the present invention and,
Figure 4 shows a second solar cell structure according to the present invention.
An amorphous silicon layer or multi-layer amorphous structure of 6,000A was grown on an amorphous non-crystalline substrate e.g. glass, metallised glass or stainless steel by known methods, for example the glow discharge decomposition of SiH4 or by sputtering. The amorphous layer or layers are then subjected to exposure by a suitable laser. The effect of the exposure to the laser is either to crystallise a controlled thickness of the amorphous structure when a high power is used to anneal the amorphous layer when a lower power is used.
The recrystallised layer possesses optical and electronic properties which make it more suitable as part of a solar cell, p-n junction or other devices.
In the case of the annealed, non-recystallised layer the properties will tend to reduce the density of the defect states in the gap.
Referring now to the drawings current practise when using amorphous-silicon (a- Si) for solar cells is to use p-i-n or Schottky barrier I - i - n structures, as shown in Figs. 1 and 2. These approaches limit the attainable solar conversion efficiency, for any quality i-Si, because of the p layer or metal Schottky barrier prevents a large proportion of the incident light from reaching the depleted i region. If these surface layers could be replaced by a relatively optically transparent material, which still forms an electrically active junction, then the device efficiency would be improved.
This invention replaces the pa -Si or metal
Schottky barrier with an amorphous layer of 'p' type SixCi -x in which 0 x 1 as shown in
Fig. 3. Amorphous S1 xCi -x forms a continuous series of solid solutions with a bandgap that increases as x decreases, thus a larger fraction of the incident light reaches the junction depletion than with conventional structures. This application therfore provides a heterojunction a-SiC/Si structure.
Further uses of this concept includes
SixC, ~ x/SiyC, ~y/SixC1 ~ x/glass/metal or plastic substrate structures for visible light emission which would have applications for flat panel displays.
Referring now to Fig. 4 a second preferred solar cell according to the present invention is shown. Current amorphous silicon solar cells are limited in efficiency because of absorption or reflection of light by the top pa-Si or metal
Schottky barrier layer. The solar cell shown in
Fig. 4 reduces the wastage of input photons by forming a p-n junction between p-type polycrystalline silicon and the conventional i-na-Si layers as shown in Figs. 1 and 2. The cell is therefore more efficient than previously known solar cells.
In the above shown solar cells suitable front and rear contact metallisations are applied to realise a working structure.
Claims (9)
1. A method of treating one or more layers of amorphous material deposited on a non-crystalline substrate, to improve the suitability of the material for use in solar cells or similar devices as hereinbefore defined by subjecting the layer of amorphous material to exposure by a laser.
2. A method of treating one or more layers of amorphous material as claimed in claim 1 in which the amorphous material is silicon, or hydrogenated amorphous silicon or silicon carbide or gallium arsenide or gallium phosphide.
3. A method of treating one or more layers of amorphous material as claimed in claim 2 in which the amorphous silicon or hydrogenated amorphous silicon is deposited on the amorphous substrate using the glow discharge decomposition of Six4.
4. A method of treating one or more layers of amorphous material as claimed in any one of the preceding claims in which the exposure is at a low enough level so that the material is not recrystallised but is annealed so as to reduce the number of defect states in the gap with a consequent improvement in lifetime and diffusion lengths.
5. A method of treating one or more layers of amorphous material as claimed in any one of the preceding claims in which the exposure is at a level high enough to recrystallise at least one layer of the amorphous material.
6. A method of treating one or more layers of amorphous material substantially as described.
7. An amorphous silicon solar cell comprising an upper layer of p type SixC,-x and intermediate layer of ia-Si and a lower layer of naSi mounted on a suitable substrate.
8. An amorphous silicon solar cell comprising an upper layer of p type polycrystalline silicon an intermediate layer of ia-Si and a lower layer of naSi mounted on a suitable substrate.
9. An amorphous silicon solar cell substantially as described with reference to Fig. 3 or 4 of the accompanying drawings.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7930141A GB2030766A (en) | 1978-09-02 | 1979-08-30 | Laser treatment of semiconductor material |
| DE19803032158 DE3032158A1 (en) | 1979-08-30 | 1980-08-26 | SOLAR CELL |
| JP11899680A JPS5664476A (en) | 1979-08-30 | 1980-08-28 | Armophous silicon solar battery |
| FR8018761A FR2464565A1 (en) | 1979-08-30 | 1980-08-29 | Laser treatment of semiconductor material - uses low and high power dosages to crystallise or anneal controlled thickness of amorphous structure, grown on non-crystalline substrate |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7835406 | 1978-09-02 | ||
| GB7930141A GB2030766A (en) | 1978-09-02 | 1979-08-30 | Laser treatment of semiconductor material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2030766A true GB2030766A (en) | 1980-04-10 |
Family
ID=26268730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7930141A Withdrawn GB2030766A (en) | 1978-09-02 | 1979-08-30 | Laser treatment of semiconductor material |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2030766A (en) |
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0025872A2 (en) * | 1979-09-21 | 1981-04-01 | Messerschmitt-Bölkow-Blohm Gesellschaft mit beschränkter Haftung | Semiconductor component part for the conversion of solar rays into electrical energy |
| EP0042868A1 (en) * | 1979-12-26 | 1982-01-06 | GIBBONS, James F. | Amorphous solar cells and method |
| FR2525819A1 (en) * | 1982-04-27 | 1983-10-28 | Rca Corp | SEMICONDUCTOR PHOTOELECTRIC CELL |
| FR2582455A1 (en) * | 1985-05-21 | 1986-11-28 | Menigaux Louis | METHOD FOR MANUFACTURING A RIBBON AND LASER GEOMETRY SEMICONDUCTOR LASER OBTAINED BY THIS PROCESS |
| FR2588123A1 (en) * | 1985-09-27 | 1987-04-03 | Sanyo Electric Co | PHOTOVOLTAIC DEVICE |
| EP0361481A2 (en) * | 1988-09-30 | 1990-04-04 | Kanegafuchi Chemical Industry Co., Ltd. | Method of stabilizing amorphous semiconductors |
| WO1996017388A1 (en) * | 1994-12-02 | 1996-06-06 | Pacific Solar Pty. Limited | Method of manufacturing a multilayer solar cell |
| EP0989102A1 (en) * | 1998-09-21 | 2000-03-29 | Central Glass Company, Limited | Process for producing amorphous material containing single-crystal or polycrystal regions and material produced |
| EP1265297A1 (en) * | 2000-03-13 | 2002-12-11 | Sony Corporation | Optical energy transducer |
| US8058615B2 (en) | 2008-02-29 | 2011-11-15 | Sionyx, Inc. | Wide spectral range hybrid image detector |
| US8679959B2 (en) | 2008-09-03 | 2014-03-25 | Sionyx, Inc. | High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation |
| US8680591B2 (en) | 2009-09-17 | 2014-03-25 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
| US8698272B2 (en) | 2010-12-21 | 2014-04-15 | Sionyx, Inc. | Semiconductor devices having reduced substrate damage and associated methods |
| US8698084B2 (en) | 2011-03-10 | 2014-04-15 | Sionyx, Inc. | Three dimensional sensors, systems, and associated methods |
| US8802549B2 (en) | 2009-04-28 | 2014-08-12 | Sionyx, Inc. | Semiconductor surface modification |
| US8865507B2 (en) | 2011-09-16 | 2014-10-21 | Sionyx, Inc. | Integrated visible and infrared imager devices and associated methods |
| US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
| US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
| US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
| US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9741761B2 (en) | 2010-04-21 | 2017-08-22 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9761739B2 (en) | 2010-06-18 | 2017-09-12 | Sionyx, Llc | High speed photosensitive devices and associated methods |
| US9762830B2 (en) | 2013-02-15 | 2017-09-12 | Sionyx, Llc | High dynamic range CMOS image sensor having anti-blooming properties and associated methods |
| US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
| US10244188B2 (en) | 2011-07-13 | 2019-03-26 | Sionyx, Llc | Biometric imaging devices and associated methods |
| US10361083B2 (en) | 2004-09-24 | 2019-07-23 | President And Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| US10374109B2 (en) | 2001-05-25 | 2019-08-06 | President And Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
-
1979
- 1979-08-30 GB GB7930141A patent/GB2030766A/en not_active Withdrawn
Cited By (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0025872A2 (en) * | 1979-09-21 | 1981-04-01 | Messerschmitt-Bölkow-Blohm Gesellschaft mit beschränkter Haftung | Semiconductor component part for the conversion of solar rays into electrical energy |
| EP0025872A3 (en) * | 1979-09-21 | 1982-02-10 | Messerschmitt-Bolkow-Blohm Gesellschaft Mit Beschrankter Haftung | Semiconductor component part for the conversion of light into electrical energy |
| EP0042868A1 (en) * | 1979-12-26 | 1982-01-06 | GIBBONS, James F. | Amorphous solar cells and method |
| EP0042868A4 (en) * | 1979-12-26 | 1982-02-05 | James F Gibbons | Amorphous solar cells and method. |
| FR2525819A1 (en) * | 1982-04-27 | 1983-10-28 | Rca Corp | SEMICONDUCTOR PHOTOELECTRIC CELL |
| FR2582455A1 (en) * | 1985-05-21 | 1986-11-28 | Menigaux Louis | METHOD FOR MANUFACTURING A RIBBON AND LASER GEOMETRY SEMICONDUCTOR LASER OBTAINED BY THIS PROCESS |
| EP0203848A1 (en) * | 1985-05-21 | 1986-12-03 | Louis Menigaux | Method of making a semiconductor laser with a stripe-shaped geometry and laser obtained by this method |
| US4742013A (en) * | 1985-05-21 | 1988-05-03 | Louis Menigaux | Process for the production of a semiconductor laser with tape geometry and laser obtained by this process |
| FR2588123A1 (en) * | 1985-09-27 | 1987-04-03 | Sanyo Electric Co | PHOTOVOLTAIC DEVICE |
| EP0361481A3 (en) * | 1988-09-30 | 1990-11-14 | Kanegafuchi Chemical Industry Co., Ltd. | Method of stabilizing amorphous semiconductors, thus-stabilized amorphous semiconductors and devices using such semiconductors |
| EP0361481A2 (en) * | 1988-09-30 | 1990-04-04 | Kanegafuchi Chemical Industry Co., Ltd. | Method of stabilizing amorphous semiconductors |
| WO1996017388A1 (en) * | 1994-12-02 | 1996-06-06 | Pacific Solar Pty. Limited | Method of manufacturing a multilayer solar cell |
| US5942050A (en) * | 1994-12-02 | 1999-08-24 | Pacific Solar Pty Ltd. | Method of manufacturing a multilayer solar cell |
| EP0989102A1 (en) * | 1998-09-21 | 2000-03-29 | Central Glass Company, Limited | Process for producing amorphous material containing single-crystal or polycrystal regions and material produced |
| US6261420B1 (en) | 1998-09-21 | 2001-07-17 | Central Glass Company, Limited | Process for producing amorphous material containing single crystal or polycrystal and material produced |
| EP1265297A1 (en) * | 2000-03-13 | 2002-12-11 | Sony Corporation | Optical energy transducer |
| EP1265297A4 (en) * | 2000-03-13 | 2003-07-02 | Sony Corp | Optical energy transducer |
| US7199303B2 (en) | 2000-03-13 | 2007-04-03 | Sony Corporation | Optical energy conversion apparatus |
| US10374109B2 (en) | 2001-05-25 | 2019-08-06 | President And Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
| US10361083B2 (en) | 2004-09-24 | 2019-07-23 | President And Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| US10741399B2 (en) | 2004-09-24 | 2020-08-11 | President And Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| US8058615B2 (en) | 2008-02-29 | 2011-11-15 | Sionyx, Inc. | Wide spectral range hybrid image detector |
| US8679959B2 (en) | 2008-09-03 | 2014-03-25 | Sionyx, Inc. | High sensitivity photodetectors, imaging arrays, and high efficiency photovoltaic devices produced using ion implantation and femtosecond laser irradiation |
| US8802549B2 (en) | 2009-04-28 | 2014-08-12 | Sionyx, Inc. | Semiconductor surface modification |
| US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US8680591B2 (en) | 2009-09-17 | 2014-03-25 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
| US10361232B2 (en) | 2009-09-17 | 2019-07-23 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
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| US9741761B2 (en) | 2010-04-21 | 2017-08-22 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9761739B2 (en) | 2010-06-18 | 2017-09-12 | Sionyx, Llc | High speed photosensitive devices and associated methods |
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