GB201320925D0 - Semiconductor devices and fabrication methods - Google Patents

Semiconductor devices and fabrication methods

Info

Publication number
GB201320925D0
GB201320925D0 GB201320925A GB201320925A GB201320925D0 GB 201320925 D0 GB201320925 D0 GB 201320925D0 GB 201320925 A GB201320925 A GB 201320925A GB 201320925 A GB201320925 A GB 201320925A GB 201320925 D0 GB201320925 D0 GB 201320925D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
fabrication methods
fabrication
methods
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB201320925A
Other versions
GB2520687A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seren Photonics Ltd
Original Assignee
Seren Photonics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seren Photonics Ltd filed Critical Seren Photonics Ltd
Priority to GB1320925.9A priority Critical patent/GB2520687A/en
Publication of GB201320925D0 publication Critical patent/GB201320925D0/en
Priority to CN201480073098.1A priority patent/CN105917444A/en
Priority to EP14803236.0A priority patent/EP3075002A1/en
Priority to PCT/GB2014/053496 priority patent/WO2015079222A1/en
Publication of GB2520687A publication Critical patent/GB2520687A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
GB1320925.9A 2013-11-27 2013-11-27 Semiconductor devices and fabrication methods Withdrawn GB2520687A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB1320925.9A GB2520687A (en) 2013-11-27 2013-11-27 Semiconductor devices and fabrication methods
CN201480073098.1A CN105917444A (en) 2013-11-27 2014-11-25 Semiconductor devices and fabrication methods
EP14803236.0A EP3075002A1 (en) 2013-11-27 2014-11-25 Semiconductor devices and fabrication methods
PCT/GB2014/053496 WO2015079222A1 (en) 2013-11-27 2014-11-25 Semiconductor devices and fabrication methods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1320925.9A GB2520687A (en) 2013-11-27 2013-11-27 Semiconductor devices and fabrication methods

Publications (2)

Publication Number Publication Date
GB201320925D0 true GB201320925D0 (en) 2014-01-08
GB2520687A GB2520687A (en) 2015-06-03

Family

ID=49918277

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1320925.9A Withdrawn GB2520687A (en) 2013-11-27 2013-11-27 Semiconductor devices and fabrication methods

Country Status (4)

Country Link
EP (1) EP3075002A1 (en)
CN (1) CN105917444A (en)
GB (1) GB2520687A (en)
WO (1) WO2015079222A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190139766A1 (en) * 2017-11-09 2019-05-09 Nanya Technology Corporation Semiconductor structure and method for preparing the same
WO2019206844A1 (en) * 2018-04-22 2019-10-31 Epinovatech Ab Reinforced thin-film device
KR20210078555A (en) * 2018-10-26 2021-06-28 에바텍 아크티엔게젤샤프트 Deposition process for piezoelectric coatings
FR3088478B1 (en) 2018-11-08 2020-10-30 Soitec Silicon On Insulator COLLECTIVE MANUFACTURING PROCESS OF A PLURALITY OF SEMI-CONDUCTIVE STRUCTURES
EP3836227A1 (en) 2019-12-11 2021-06-16 Epinovatech AB Semiconductor layer structure
EP3866189B1 (en) 2020-02-14 2022-09-28 Epinovatech AB A mmic front-end module
EP3879706A1 (en) 2020-03-13 2021-09-15 Epinovatech AB Field-programmable gate array device
EP4101945B1 (en) 2021-06-09 2024-05-15 Epinovatech AB A device for performing electrolysis of water, and a system thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040029365A1 (en) * 2001-05-07 2004-02-12 Linthicum Kevin J. Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US20060189079A1 (en) * 2005-02-24 2006-08-24 Merchant Tushar P Method of forming nanoclusters
KR100668964B1 (en) * 2005-09-27 2007-01-12 엘지전자 주식회사 Light emitting device with nano-groove and method for fabricating the same
GB2488587B (en) * 2011-03-03 2015-07-29 Seren Photonics Ltd Semiconductor devices and fabrication methods

Also Published As

Publication number Publication date
WO2015079222A1 (en) 2015-06-04
EP3075002A1 (en) 2016-10-05
CN105917444A (en) 2016-08-31
GB2520687A (en) 2015-06-03

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)