GB1487936A - Negative electron beam resist - Google Patents

Negative electron beam resist

Info

Publication number
GB1487936A
GB1487936A GB4765274A GB4765274A GB1487936A GB 1487936 A GB1487936 A GB 1487936A GB 4765274 A GB4765274 A GB 4765274A GB 4765274 A GB4765274 A GB 4765274A GB 1487936 A GB1487936 A GB 1487936A
Authority
GB
United Kingdom
Prior art keywords
electron beam
beam resist
negative electron
nov
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4765274A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1487936A publication Critical patent/GB1487936A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Electron Beam Exposure (AREA)

Abstract

1487936 Electron-sensitive materials TEXAS INSTRUMENTS Inc 4 Nov 1974 [5 Nov 1973(2)] 47652/74 Heading G2C An electron-sensitive material comprising polyvinylidene fluoride or a copolymer of tetrafluoroethylene with either vinylidene fluoride or with chlorotrifluoroethylene on a support is imagewise exposed to cross-link the exposed areas and then developed by dissolving the unexposed areas, e.g. with a ketone. The developed resist may be baked for 30 minutes at 180‹C to improve adhesion.
GB4765274A 1973-11-05 1974-11-04 Negative electron beam resist Expired GB1487936A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41293373A 1973-11-05 1973-11-05
US41293073A 1973-11-05 1973-11-05

Publications (1)

Publication Number Publication Date
GB1487936A true GB1487936A (en) 1977-10-05

Family

ID=27021973

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4765274A Expired GB1487936A (en) 1973-11-05 1974-11-04 Negative electron beam resist

Country Status (4)

Country Link
JP (1) JPS576573B2 (en)
DE (1) DE2446930A1 (en)
FR (1) FR2250139B1 (en)
GB (1) GB1487936A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593058B1 (en) 1998-09-23 2003-07-15 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
WO2003087938A2 (en) * 2002-04-09 2003-10-23 Quantiscript Inc. Plasma polymerized electron beam resist
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4171417A (en) * 1978-10-30 1979-10-16 Calgon Corporation Polymers with improved solvent holdout in electroconductive paper
NL7906932A (en) * 1979-09-18 1981-03-20 Philips Nv NEGATIVE RESIST MATERIAL, RESIST MATERIAL CARRIER AND METHOD FOR APPLYING A LAYER BY PATTERN.
EP0240726A3 (en) * 1986-03-05 1987-12-09 Daikin Industries, Limited Resist material

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593058B1 (en) 1998-09-23 2003-07-15 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US7276323B2 (en) 1998-09-23 2007-10-02 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
WO2003087938A2 (en) * 2002-04-09 2003-10-23 Quantiscript Inc. Plasma polymerized electron beam resist
US6855646B2 (en) 2002-04-09 2005-02-15 Quantiscript Inc. Plasma polymerized electron beam resist
WO2003087938A3 (en) * 2002-04-09 2005-02-17 Quantiscript Inc Plasma polymerized electron beam resist

Also Published As

Publication number Publication date
JPS576573B2 (en) 1982-02-05
DE2446930A1 (en) 1975-05-07
FR2250139A1 (en) 1975-05-30
FR2250139B1 (en) 1980-06-27
JPS5073705A (en) 1975-06-18

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19941103