GB1249317A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1249317A
GB1249317A GB5487868A GB5487868A GB1249317A GB 1249317 A GB1249317 A GB 1249317A GB 5487868 A GB5487868 A GB 5487868A GB 5487868 A GB5487868 A GB 5487868A GB 1249317 A GB1249317 A GB 1249317A
Authority
GB
United Kingdom
Prior art keywords
resistor
wafer
impurities
contact
contact regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5487868A
Inventor
Kornelis Bulthuis
John Martin Shannon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB5487868A priority Critical patent/GB1249317A/en
Priority to DE19691954445 priority patent/DE1954445A1/en
Priority to CH1700769A priority patent/CH500570A/en
Priority to NL6917221A priority patent/NL166820C/en
Priority to JP9115869A priority patent/JPS4844064B1/ja
Priority to ES373627A priority patent/ES373627A1/en
Priority to SE1573569A priority patent/SE361771B/xx
Priority to BR21426069A priority patent/BR6914260D0/en
Priority to CA067595A priority patent/CA937682A/en
Priority to AT1071369A priority patent/AT300961B/en
Priority to FR6939590A priority patent/FR2023619A1/fr
Priority to BE741870D priority patent/BE741870A/xx
Publication of GB1249317A publication Critical patent/GB1249317A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

1,249,317. Semi-conductor resistors. MULLARD Ltd. 19 Nov., 1968, No. 54878/68. Headings H1K and H1S. In a semi-conductor resistor comprising a body containing electrically active impurities to provide free charge carriers and electrically inactive impurities to reduce the temperature coefficient, the inactive impurities consist for a substantial part of neutral impurities. The neutral impurities may be elements such as Pb or Sn in Si, Ge or a mixed crystal of Si or Ge, or Al in GaAs. Alternatively the semi-conductor may contain a normally active impurity introduced in such a concentration and in such a way that a proportion of the atoms act as neutral impurities. Crystal dislocations produced by electron bombardment may also be used as neutral impurities. The resistor may be integrated in a wafer together with other devices such as transistors. In a first method an N-type Si wafer is provided with an oxide mask exposing a strip which is to form the resistor with an enlarged contact region at each end. Sn is diffused into the exposed area from the gas phase followed by a drive-in step. Boron is then diffused-in to form a P-type region. The wafer is then reoxidized, the contact regions are exposed and are provided with Al contacts to which conductors may be connected. In a second method an N-type Si wafer is provided with an oxide mask exposing contact areas for the resistor. B is diffused-in to form the contact regions and the resistor strip is exposed. Al is vapour deposited and processed to form contacts to the major portions of the contact regions. Ga<SP>69</SP> is then introduced into the resistor strip and also the non-contacted parts of the contact regions by ion implantation. The wafer is then annealed. A proportion of the implanted ions act as active impurities to provide the current carriers and the remainder act as neutral impurities. In a modification, after deposition of the Al layer the resistor strip is exposed by etching away the Al and oxide layers. Ga is then ion-implanted and the excess Al is etched away leaving the contact lands. In a further method an N-type Si wafer is provided with an oxide mask exposing contact lands for the resistor. B is diffused-in to form the contact regions, the oxide layer is removed and the wafer is reoxidized. Smaller apertures are formed in the oxide layer over the contact regions, Al is vapour deposited and the resistor strip is etched in the Al layer only. B<SP>11</SP> ions are then implanted through the oxide layer to form the resistor, the Al layer acting as a mask. The excess Al is then etched away leaving contact lands and the wafer is annealed.
GB5487868A 1968-11-19 1968-11-19 Semiconductor devices Expired GB1249317A (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
GB5487868A GB1249317A (en) 1968-11-19 1968-11-19 Semiconductor devices
DE19691954445 DE1954445A1 (en) 1968-11-19 1969-10-29 Semiconductor component
CH1700769A CH500570A (en) 1968-11-19 1969-11-14 Semiconductor device
NL6917221A NL166820C (en) 1968-11-19 1969-11-14 SEMICONDUCTOR DEVICE EQUIPPED WITH RESISTANCE ELEMENT AND METHOD FOR MANUFACTURING IT.
JP9115869A JPS4844064B1 (en) 1968-11-19 1969-11-15
ES373627A ES373627A1 (en) 1968-11-19 1969-11-17 Semiconductor devices
SE1573569A SE361771B (en) 1968-11-19 1969-11-17
BR21426069A BR6914260D0 (en) 1968-11-19 1969-11-17 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING PROCESS
CA067595A CA937682A (en) 1968-11-19 1969-11-17 Temperature compensated semiconductor resistor containing neutral inactive impurities
AT1071369A AT300961B (en) 1968-11-19 1969-11-17 Semiconductor device
FR6939590A FR2023619A1 (en) 1968-11-19 1969-11-18
BE741870D BE741870A (en) 1968-11-19 1969-11-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5487868A GB1249317A (en) 1968-11-19 1968-11-19 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB1249317A true GB1249317A (en) 1971-10-13

Family

ID=10472333

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5487868A Expired GB1249317A (en) 1968-11-19 1968-11-19 Semiconductor devices

Country Status (12)

Country Link
JP (1) JPS4844064B1 (en)
AT (1) AT300961B (en)
BE (1) BE741870A (en)
BR (1) BR6914260D0 (en)
CA (1) CA937682A (en)
CH (1) CH500570A (en)
DE (1) DE1954445A1 (en)
ES (1) ES373627A1 (en)
FR (1) FR2023619A1 (en)
GB (1) GB1249317A (en)
NL (1) NL166820C (en)
SE (1) SE361771B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2136213A (en) * 1983-01-20 1984-09-12 Bbc Brown Boveri & Cie Method for producing a thin film resistor

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU464038B2 (en) * 1970-12-09 1975-08-14 Philips Nv Improvements in and relating to semiconductor devices
FR2123179B1 (en) * 1971-01-28 1974-02-15 Commissariat Energie Atomique
FR2189876A1 (en) * 1972-06-23 1974-01-25 Anvar Radiation resistant silicon wafers - and solar cells made therefrom for use in space
JPS53148374U (en) * 1977-04-27 1978-11-22
JPS53136980A (en) * 1977-05-04 1978-11-29 Nippon Telegr & Teleph Corp <Ntt> Resistance value correction method for poly crystal silicon resistor
FR2396418A1 (en) * 1977-06-29 1979-01-26 Tokyo Shibaura Electric Co INTEGRATED SEMICONDUCTOR DEVICE WHOSE CHARACTERISTICS ARE NOT AFFECTED BY THE ENCAPSULATION
DE2828605C3 (en) * 1977-06-29 1982-01-14 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Semiconductor device
JPS5439584A (en) * 1977-07-14 1979-03-27 Toshiba Corp Semiconductor device
JPS6014898A (en) * 1983-07-05 1985-01-25 高田　継生 Clothing closet equipped with dryer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2136213A (en) * 1983-01-20 1984-09-12 Bbc Brown Boveri & Cie Method for producing a thin film resistor

Also Published As

Publication number Publication date
NL6917221A (en) 1970-05-21
BR6914260D0 (en) 1973-04-19
NL166820C (en) 1981-09-15
CH500570A (en) 1970-12-15
DE1954445A1 (en) 1970-06-11
NL166820B (en) 1981-04-15
FR2023619A1 (en) 1970-08-21
ES373627A1 (en) 1972-05-16
AT300961B (en) 1972-08-10
BE741870A (en) 1970-05-19
JPS4844064B1 (en) 1973-12-22
SE361771B (en) 1973-11-12
CA937682A (en) 1973-11-27

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