GB1234894A - Process for polishing the surface of semiconductor materials - Google Patents
Process for polishing the surface of semiconductor materialsInfo
- Publication number
- GB1234894A GB1234894A GB08372/69A GB1837269A GB1234894A GB 1234894 A GB1234894 A GB 1234894A GB 08372/69 A GB08372/69 A GB 08372/69A GB 1837269 A GB1837269 A GB 1837269A GB 1234894 A GB1234894 A GB 1234894A
- Authority
- GB
- United Kingdom
- Prior art keywords
- polishing
- solution
- suspension
- sio
- discs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
1,234,894. Surface polishing of semi-conductor materials. WACKER-CHEMIE G.m.b.H. 10 April, 1969 [11 April, 1968], No. 18372/69. Heading B3D. [Also in Divisions C4-C5] A suspension of a precipitated metal silicate and/or a metal silicofluoride is used as a mechanically acting agent for polishing semi-conductor surfaces. The silicate may be precipitated by adding a silicate-forming metal salt or solution thereof to a solution of silicic acid or of a salt or derivative thereof. Suitable metal salts are those of the metals of the 2nd and 3rd groups of the Periodic Table, e.g. soluble salts of magnesium, calcium, strontium, barium, zinc or aluminium; salts of heavy metals, e.g. zirconium, iron, lead, nickel and cobalt may be used. The solutions of silicic acids or of their salts or derivatives are usually aqueous solutions, but organic solvents, e.g. alcohols, ketones or esters may be used. As derivatives of silicic acid there may be used silicic acid esters which may be partially or wholly hydrolyzed, e.g. partially hydrolyzed silicic acid-tetra-n-butyl ester. The silicofluoride may be precipitated by adding a silicofluoride-forming metal compound or solution thereof to a solution of fluorosilicic acid or of a salt or derivative thereof. Suitable metal compounds are oxides or hydroxides of the metals of Groups I-III of the Periodic Table, especially of sodium, potassium, magnesium, calcium barium, aluminium or zinc. The polishing suspension may be neutral or alkaline. Example 1. Silicon discs, 32 mm. diameter and 300 Á thick, obtained by sawing up a monocrystalline rod of silicon, are lapped with carborundum powder (particle size 5 Á) whereby on each side 50 Á are removed. Twelve discs are attached by beeswax to a round plane carrier plate of stainless steel, 180 mm. diameter, which is placed on the rotary table (450 mm.) of a polishing machine and is covered with a polishing cloth, the whole being loaded with 1À5 kg. pressure. The table is rotated at 90 r.p.m. Polishing suspension is dropped on to the table at 1 to 2 drops per minute, and polishing performed for 20 mins. The polishing suspension was obtained by taking 120 ml. of waterglass solution (33% SiO 2 ), diluting with 1800 ml. of deionized water and slowly adding a solution of 25 g. AlCl 3 .6H 2 O in 100 ml. of water. The precipitate has a grain size of about 20 mÁ. Example 2. Silicon discs, pretreated as in Example 1, are polished with a suspension prepared as follows: 120 ml. of sodium waterglass solution (33% SiO 2 ) are diluted with 1800 ml. of deionized water and heated to 80 C. A solution of 150 g of CaCl 2 .6H 2 O in 200 ml. of water is stirred in very slowly; the suspension is cooled before use. The precipitate has an approximate formula CaO.2SiO 2 , and a grain size of about 60 mÁ. Polishing time is 15 mins. Example 3. Discs about 300 Á thick are sawn off a rod of gallium arsenide and lapped with carborundum powder of 2-3 Á particle size removing about 30 Á on each side. Polishing is carried out as in Example 1, using an aqueous suspension of barium hexafluorosilicate prepared as follows: 560 ml. of aqueous hydrofluoric acid (38% HF) are diluted with 500 ml. of deionized water and 120 g. SiO 2 added. The SiO 2 dissolves and hexafluorosilicic acid forms. A saturated aqueous solution of 75 g. BaCl 2 .2H 2 O is slowly added, and a precipitate of BaSiF 6 settles. The strongly acidic polishing suspension is then neutralized. Polishing time is 15 mins.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19681752163 DE1752163A1 (en) | 1968-04-11 | 1968-04-11 | Process for polishing semiconductor surfaces |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1234894A true GB1234894A (en) | 1971-06-09 |
Family
ID=5692658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08372/69A Expired GB1234894A (en) | 1968-04-11 | 1969-04-10 | Process for polishing the surface of semiconductor materials |
Country Status (6)
Country | Link |
---|---|
US (1) | US3877183A (en) |
BE (1) | BE731353A (en) |
CH (1) | CH505466A (en) |
DE (1) | DE1752163A1 (en) |
FR (1) | FR2006054A1 (en) |
GB (1) | GB1234894A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008080096A2 (en) * | 2006-12-21 | 2008-07-03 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2531431C3 (en) * | 1975-07-14 | 1979-03-01 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Polishing agents for producing haze-free semiconductor surfaces |
DE2538855A1 (en) * | 1975-09-01 | 1977-03-10 | Wacker Chemitronic | PROCESS FOR THE PRODUCTION OF VEIL-FREE SEMICONDUCTOR SURFACES, IN PARTICULAR VEIL-FREE SURFACES OF (111) -ORIENTED GALLIUM ARSENIDE |
FR2327036A1 (en) * | 1975-10-08 | 1977-05-06 | Du Pont | Modified silica sol for polishing silicon and germanium - remaining stable without depolymerisation at high pH for rapid polishing |
JPS55113700A (en) * | 1979-02-19 | 1980-09-02 | Fujimi Kenmazai Kogyo Kk | Polishing method for gadolinium gallium garnet single crystal |
JPS5935429A (en) * | 1982-08-12 | 1984-02-27 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | Method of producing semiconductor wafer |
DE3237235C2 (en) * | 1982-10-07 | 1986-07-10 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Process for polishing III-V semiconductor surfaces |
US4588421A (en) * | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
US5993685A (en) * | 1997-04-02 | 1999-11-30 | Advanced Technology Materials | Planarization composition for removing metal films |
US6319095B1 (en) * | 2000-03-09 | 2001-11-20 | Agere Systems Guardian Corp. | Colloidal suspension of abrasive particles containing magnesium as CMP slurry |
KR20140102696A (en) * | 2011-12-27 | 2014-08-22 | 코니카 미놀타 가부시키가이샤 | Method for separating polishing material and regenerated polishing material |
CN111253910B (en) * | 2020-03-18 | 2021-07-16 | 昆山捷纳电子材料有限公司 | Preparation method of inorganic polyelectrolyte-silicon oxide composite polishing abrasive particles |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2275049A (en) * | 1942-03-03 | Polish | ||
US2375825A (en) * | 1941-10-16 | 1945-05-15 | Interchem Corp | Polishing compositions |
US2375823A (en) * | 1941-10-16 | 1945-05-15 | Interchem Corp | Polishing composition |
US2399237A (en) * | 1942-12-15 | 1946-04-30 | William T Maloney | Polishing material and process of preparing same |
US2955030A (en) * | 1959-02-25 | 1960-10-04 | Nat Lead Co | Polishing compositions |
US3170273A (en) * | 1963-01-10 | 1965-02-23 | Monsanto Co | Process for polishing semiconductor materials |
US3527028A (en) * | 1967-09-26 | 1970-09-08 | Bell Telephone Labor Inc | Preparation of semiconductor surfaces |
US3647381A (en) * | 1968-04-08 | 1972-03-07 | Gabriel Reiter | Dental-prophylaxis composition |
US3541017A (en) * | 1969-02-04 | 1970-11-17 | Indiana University Foundation | Denture cleanser preparations comprising zirconium silicate and zirconium dioxide |
US3754941A (en) * | 1971-01-04 | 1973-08-28 | Colgate Palmolive Co | Removal of metallic stains from porcelain surfaces |
-
1968
- 1968-04-11 DE DE19681752163 patent/DE1752163A1/en active Granted
-
1969
- 1969-04-10 BE BE731353D patent/BE731353A/xx unknown
- 1969-04-10 GB GB08372/69A patent/GB1234894A/en not_active Expired
- 1969-04-10 FR FR6911069A patent/FR2006054A1/fr not_active Withdrawn
- 1969-04-11 CH CH556969A patent/CH505466A/en not_active IP Right Cessation
-
1972
- 1972-08-28 US US284167A patent/US3877183A/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008080096A2 (en) * | 2006-12-21 | 2008-07-03 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
WO2008080096A3 (en) * | 2006-12-21 | 2008-11-06 | Advanced Tech Materials | Compositions and methods for the selective removal of silicon nitride |
US8778210B2 (en) | 2006-12-21 | 2014-07-15 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
US9158203B2 (en) | 2006-12-21 | 2015-10-13 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
TWI509690B (en) * | 2006-12-21 | 2015-11-21 | Entegris Inc | Compositions and methods for the selective removal of silicon nitride |
US9691629B2 (en) | 2006-12-21 | 2017-06-27 | Entegris, Inc. | Compositions and methods for the selective removal of silicon nitride |
Also Published As
Publication number | Publication date |
---|---|
FR2006054A1 (en) | 1969-12-19 |
BE731353A (en) | 1969-10-10 |
CH505466A (en) | 1971-03-31 |
US3877183A (en) | 1975-04-15 |
DE1752163B2 (en) | 1974-07-25 |
DE1752163A1 (en) | 1971-05-13 |
DE1752163C3 (en) | 1975-03-20 |
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