GB0106709D0 - New quantum dot laser structure - Google Patents

New quantum dot laser structure

Info

Publication number
GB0106709D0
GB0106709D0 GB0106709A GB0106709A GB0106709D0 GB 0106709 D0 GB0106709 D0 GB 0106709D0 GB 0106709 A GB0106709 A GB 0106709A GB 0106709 A GB0106709 A GB 0106709A GB 0106709 D0 GB0106709 D0 GB 0106709D0
Authority
GB
United Kingdom
Prior art keywords
quantum dot
laser structure
dot laser
new quantum
new
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0106709A
Other versions
GB2373371A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Priority to GB0106709A priority Critical patent/GB2373371A/en
Publication of GB0106709D0 publication Critical patent/GB0106709D0/en
Priority to PCT/IB2002/001842 priority patent/WO2002075876A2/en
Publication of GB2373371A publication Critical patent/GB2373371A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
GB0106709A 2001-03-17 2001-03-17 Quantum dot laser structure Withdrawn GB2373371A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB0106709A GB2373371A (en) 2001-03-17 2001-03-17 Quantum dot laser structure
PCT/IB2002/001842 WO2002075876A2 (en) 2001-03-17 2002-03-18 New quantum dot laser structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0106709A GB2373371A (en) 2001-03-17 2001-03-17 Quantum dot laser structure

Publications (2)

Publication Number Publication Date
GB0106709D0 true GB0106709D0 (en) 2001-05-09
GB2373371A GB2373371A (en) 2002-09-18

Family

ID=9910960

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0106709A Withdrawn GB2373371A (en) 2001-03-17 2001-03-17 Quantum dot laser structure

Country Status (2)

Country Link
GB (1) GB2373371A (en)
WO (1) WO2002075876A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2388957A (en) 2002-05-24 2003-11-26 Imp College Innovations Ltd Quantum dots for extended wavelength operation
CN104393098B (en) * 2014-10-09 2016-05-11 苏州强明光电有限公司 Multijunction solar cell of based semiconductor quantum dot and preparation method thereof
CN104241452B (en) * 2014-10-09 2016-08-24 苏州强明光电有限公司 Flexible quanta solaode and preparation method thereof
CN110854678B (en) * 2018-08-20 2021-02-05 山东华光光电子股份有限公司 Preparation method of GaAs-based high-power laser

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223043A (en) * 1991-02-11 1993-06-29 The United States Of America As Represented By The United States Department Of Energy Current-matched high-efficiency, multijunction monolithic solar cells
US5212706A (en) * 1991-12-03 1993-05-18 University Of Connecticut Laser diode assembly with tunnel junctions and providing multiple beams
JPH10326906A (en) * 1997-05-26 1998-12-08 Hamamatsu Photonics Kk Photodetection element and image-pickup element
JPH1187689A (en) * 1997-09-04 1999-03-30 Fujitsu Ltd Manufacture of quantum dot

Also Published As

Publication number Publication date
GB2373371A (en) 2002-09-18
WO2002075876A3 (en) 2003-11-06
WO2002075876A2 (en) 2002-09-26

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)