FR2845517B1 - IMPLEMENTING A DEMONDABLE SEMICONDUCTOR SUBSTRATE AND OBTAINING A SEMICONDUCTOR ELEMENT - Google Patents

IMPLEMENTING A DEMONDABLE SEMICONDUCTOR SUBSTRATE AND OBTAINING A SEMICONDUCTOR ELEMENT

Info

Publication number
FR2845517B1
FR2845517B1 FR0212443A FR0212443A FR2845517B1 FR 2845517 B1 FR2845517 B1 FR 2845517B1 FR 0212443 A FR0212443 A FR 0212443A FR 0212443 A FR0212443 A FR 0212443A FR 2845517 B1 FR2845517 B1 FR 2845517B1
Authority
FR
France
Prior art keywords
demondable
implementing
obtaining
semiconductor substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0212443A
Other languages
French (fr)
Other versions
FR2845517A1 (en
Inventor
Chrystelle Lagahe
Bernard Aspar
Aurelie Beaumont
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0212443A priority Critical patent/FR2845517B1/en
Priority to FR0350130A priority patent/FR2845518B1/en
Priority to EP03780289A priority patent/EP1550158B1/en
Priority to PCT/FR2003/050077 priority patent/WO2004032183A2/en
Priority to JP2005500039A priority patent/JP4777774B2/en
Priority to US10/530,640 priority patent/US7238598B2/en
Priority to AT03780289T priority patent/ATE539446T1/en
Publication of FR2845517A1 publication Critical patent/FR2845517A1/en
Application granted granted Critical
Publication of FR2845517B1 publication Critical patent/FR2845517B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
FR0212443A 2002-10-07 2002-10-07 IMPLEMENTING A DEMONDABLE SEMICONDUCTOR SUBSTRATE AND OBTAINING A SEMICONDUCTOR ELEMENT Expired - Fee Related FR2845517B1 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0212443A FR2845517B1 (en) 2002-10-07 2002-10-07 IMPLEMENTING A DEMONDABLE SEMICONDUCTOR SUBSTRATE AND OBTAINING A SEMICONDUCTOR ELEMENT
FR0350130A FR2845518B1 (en) 2002-10-07 2003-04-25 IMPLEMENTING A DEMONDABLE SEMICONDUCTOR SUBSTRATE AND OBTAINING A SEMICONDUCTOR ELEMENT
PCT/FR2003/050077 WO2004032183A2 (en) 2002-10-07 2003-10-03 Method for making a detachable semiconductor substrate and for obtaining a semiconductor element
JP2005500039A JP4777774B2 (en) 2002-10-07 2003-10-03 Method for forming a peelable semiconductor substrate and method for obtaining a semiconductor element
EP03780289A EP1550158B1 (en) 2002-10-07 2003-10-03 Method for making a detachable semiconductor substrate and for obtaining a semiconductor element
US10/530,640 US7238598B2 (en) 2002-10-07 2003-10-03 Formation of a semiconductor substrate that may be dismantled and obtaining a semiconductor element
AT03780289T ATE539446T1 (en) 2002-10-07 2003-10-03 PRODUCTION OF A REMOVABLE SEMICONDUCTOR SUBSTRATE AND A SEMICONDUCTOR ELEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0212443A FR2845517B1 (en) 2002-10-07 2002-10-07 IMPLEMENTING A DEMONDABLE SEMICONDUCTOR SUBSTRATE AND OBTAINING A SEMICONDUCTOR ELEMENT

Publications (2)

Publication Number Publication Date
FR2845517A1 FR2845517A1 (en) 2004-04-09
FR2845517B1 true FR2845517B1 (en) 2005-05-06

Family

ID=32011478

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0212443A Expired - Fee Related FR2845517B1 (en) 2002-10-07 2002-10-07 IMPLEMENTING A DEMONDABLE SEMICONDUCTOR SUBSTRATE AND OBTAINING A SEMICONDUCTOR ELEMENT

Country Status (1)

Country Link
FR (1) FR2845517B1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2748851B1 (en) * 1996-05-15 1998-08-07 Commissariat Energie Atomique PROCESS FOR PRODUCING A THIN FILM OF SEMICONDUCTOR MATERIAL
US5877070A (en) * 1997-05-31 1999-03-02 Max-Planck Society Method for the transfer of thin layers of monocrystalline material to a desirable substrate
JP3697106B2 (en) * 1998-05-15 2005-09-21 キヤノン株式会社 Method for manufacturing semiconductor substrate and method for manufacturing semiconductor thin film
FR2797347B1 (en) * 1999-08-04 2001-11-23 Commissariat Energie Atomique METHOD FOR TRANSFERRING A THIN FILM HAVING A SURFRAGILILIZATION STEP
FR2809867B1 (en) * 2000-05-30 2003-10-24 Commissariat Energie Atomique FRAGILE SUBSTRATE AND METHOD FOR MANUFACTURING SUCH SUBSTRATE

Also Published As

Publication number Publication date
FR2845517A1 (en) 2004-04-09

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20140630