FR2773177B1 - PROCESS FOR OBTAINING A SINGLE-CRYSTAL GERMANIUM OR SILICON LAYER ON A SILICON OR SINGLE-CRYSTAL GERMANIUM SUBSTRATE, RESPECTIVELY, AND MULTILAYER PRODUCTS OBTAINED - Google Patents

PROCESS FOR OBTAINING A SINGLE-CRYSTAL GERMANIUM OR SILICON LAYER ON A SILICON OR SINGLE-CRYSTAL GERMANIUM SUBSTRATE, RESPECTIVELY, AND MULTILAYER PRODUCTS OBTAINED

Info

Publication number
FR2773177B1
FR2773177B1 FR9716631A FR9716631A FR2773177B1 FR 2773177 B1 FR2773177 B1 FR 2773177B1 FR 9716631 A FR9716631 A FR 9716631A FR 9716631 A FR9716631 A FR 9716631A FR 2773177 B1 FR2773177 B1 FR 2773177B1
Authority
FR
France
Prior art keywords
crystal germanium
silicon
obtaining
products obtained
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9716631A
Other languages
French (fr)
Other versions
FR2773177A1 (en
Inventor
Daniel Bensahel
Yves Campidelli
Caroline Hernandez
Maurice Rivoire
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Priority to FR9716631A priority Critical patent/FR2773177B1/en
Priority to EP98403096A priority patent/EP0930382B1/en
Priority to DE69807314T priority patent/DE69807314D1/en
Priority to US09/217,025 priority patent/US6117750A/en
Publication of FR2773177A1 publication Critical patent/FR2773177A1/en
Application granted granted Critical
Publication of FR2773177B1 publication Critical patent/FR2773177B1/en
Priority to US09/659,913 priority patent/US6429098B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
FR9716631A 1997-12-29 1997-12-29 PROCESS FOR OBTAINING A SINGLE-CRYSTAL GERMANIUM OR SILICON LAYER ON A SILICON OR SINGLE-CRYSTAL GERMANIUM SUBSTRATE, RESPECTIVELY, AND MULTILAYER PRODUCTS OBTAINED Expired - Lifetime FR2773177B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9716631A FR2773177B1 (en) 1997-12-29 1997-12-29 PROCESS FOR OBTAINING A SINGLE-CRYSTAL GERMANIUM OR SILICON LAYER ON A SILICON OR SINGLE-CRYSTAL GERMANIUM SUBSTRATE, RESPECTIVELY, AND MULTILAYER PRODUCTS OBTAINED
EP98403096A EP0930382B1 (en) 1997-12-29 1998-12-09 Process for obtaining a layer of single crystal germanium or silicon on single cystal silicon or germanium substrate respectively, and multilayer products thus obtained
DE69807314T DE69807314D1 (en) 1997-12-29 1998-12-09 Process for producing a layer of single-crystalline silicon or germanium on a single-crystalline substrate made of or germanium or silicon and multi-layer products produced thereafter
US09/217,025 US6117750A (en) 1997-12-29 1998-12-21 Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively
US09/659,913 US6429098B1 (en) 1997-12-29 2000-09-11 Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9716631A FR2773177B1 (en) 1997-12-29 1997-12-29 PROCESS FOR OBTAINING A SINGLE-CRYSTAL GERMANIUM OR SILICON LAYER ON A SILICON OR SINGLE-CRYSTAL GERMANIUM SUBSTRATE, RESPECTIVELY, AND MULTILAYER PRODUCTS OBTAINED

Publications (2)

Publication Number Publication Date
FR2773177A1 FR2773177A1 (en) 1999-07-02
FR2773177B1 true FR2773177B1 (en) 2000-03-17

Family

ID=9515239

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9716631A Expired - Lifetime FR2773177B1 (en) 1997-12-29 1997-12-29 PROCESS FOR OBTAINING A SINGLE-CRYSTAL GERMANIUM OR SILICON LAYER ON A SILICON OR SINGLE-CRYSTAL GERMANIUM SUBSTRATE, RESPECTIVELY, AND MULTILAYER PRODUCTS OBTAINED

Country Status (4)

Country Link
US (2) US6117750A (en)
EP (1) EP0930382B1 (en)
DE (1) DE69807314D1 (en)
FR (1) FR2773177B1 (en)

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US20020090772A1 (en) * 2000-12-11 2002-07-11 Seiko Epson Corporation Method for manufacturing semiconductor lamination, method for manufacturing lamination, semiconductor device, and electronic equipment
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Also Published As

Publication number Publication date
DE69807314D1 (en) 2002-09-26
US6429098B1 (en) 2002-08-06
FR2773177A1 (en) 1999-07-02
EP0930382B1 (en) 2002-08-21
US6117750A (en) 2000-09-12
EP0930382A1 (en) 1999-07-21

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