FR2710195A1 - Antenna-electronic circuit assembly - Google Patents

Antenna-electronic circuit assembly Download PDF

Info

Publication number
FR2710195A1
FR2710195A1 FR9310932A FR9310932A FR2710195A1 FR 2710195 A1 FR2710195 A1 FR 2710195A1 FR 9310932 A FR9310932 A FR 9310932A FR 9310932 A FR9310932 A FR 9310932A FR 2710195 A1 FR2710195 A1 FR 2710195A1
Authority
FR
France
Prior art keywords
antenna
printed circuit
chips
electronic circuit
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR9310932A
Other languages
French (fr)
Other versions
FR2710195B1 (en
Inventor
Grancher Alain
Cachier Gerard
Michel Ludovic
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR9310932A priority Critical patent/FR2710195B1/en
Publication of FR2710195A1 publication Critical patent/FR2710195A1/en
Application granted granted Critical
Publication of FR2710195B1 publication Critical patent/FR2710195B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0087—Apparatus or processes specially adapted for manufacturing antenna arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/065—Patch antenna array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6688—Mixed frequency adaptations, i.e. for operation at different frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)

Abstract

The present invention relates to assemblies in which an antenna and all or part of the electronic circuit which is associated with it are arranged as close as possible to one another. The antenna (A) consists of one of the faces of a triple-plate printed circuit (C) while all or part of the electronic circuit (B) associated with this antenna is installed on the other face of the printed circuit, and a metal plate (G) is arranged within the triple-plate printed circuit in order to play the role of earth plane. Application principally at millimetric waves.

Description

ASSEMBLAGE ANTENNE-CIRCUIT ELECTRONIQUE. ANTENNA-ELECTRONIC CIRCUIT ASSEMBLY.

La présente invention se rapporte à un assemblage comportant au moins une antenne et un circuit électronique associé å l'antenne. The present invention relates to an assembly comprising at least one antenna and an electronic circuit associated with the antenna.

II est connu de rapprocher autant que faire se peut une antenne et tout ou partie de l'électronique associée à cette antenne et cela dans toutes les gammes de fréquences. Cela permet de gagner en volume, en compacité, en facilité d'emploi, voire en prix de revient. It is known to bring as close as possible an antenna and all or part of the electronics associated with this antenna and this in all the frequency ranges. This makes it possible to gain in volume, compactness, ease of use, even in cost price.

Quand l'antenne, seule ou regroupée avec d'autres antennes, est disposée selon une zone plate avec rayonnement dans l'un seulement des deux espaces situés de part et d'autre de la zone plate, comme c'est le cas, par exemple, avec certaines antennes en ondes millimétriques, il est connu de disposer en couches superposées, au dos de la ou des antennes, les étages successifs du ou des circuits électroniques; un tel assemblage nécessite des moyens de refroidissement entre les couches superposées du ou des circuits électroniques et pose des problèmes de montage du fait, en particulier, des liaisons électriques à réaliser. When the antenna, alone or grouped with other antennas, is arranged in a flat area with radiation in only one of the two spaces located on either side of the flat area, as is the case, by example, with certain millimeter wave antennas, it is known to have superimposed layers, on the back of the antenna (s), the successive stages of the electronic circuit (s); such an assembly requires cooling means between the superposed layers of the electronic circuit (s) and poses mounting problems due, in particular, to the electrical connections to be made.

La présente invention a pour but d'éviter ou, pour le moins, de réduire ces inconvénients. The object of the present invention is to avoid or at least reduce these drawbacks.

Ceci est obtenu à l'aide d'un circuit imprimé triplaque avec, d'un côté du circuit imprimé, la ou les antennes, de l'autre côté le ou les circuits électroniques et, entre les deux substrats isolants du circuit imprimé triplaque, une couche métallique formant plan de masse réflecteur. Dans une telle réalisation il n'y a pas de moyens de refroidissement à incorporer au volume dans lequel sont disposés le ou les circuits électroniques puisque ce ou ces circuits électroniques sont répartis dans un plan unique; le refroidissement peut donc se faire à l'aide d'un ou plusieurs radiateurs, voire, dans certains cas, simplement par dissipation dans l'air ambiant. This is obtained using a triplate printed circuit with, on one side of the printed circuit, the antenna (s), on the other side the electronic circuit (s) and, between the two insulating substrates of the triplate printed circuit, a metallic layer forming a reflective ground plane. In such an embodiment there are no cooling means to be incorporated into the volume in which the electronic circuit or circuits are arranged since this or these electronic circuits are distributed in a single plane; cooling can therefore be done using one or more radiators, or even, in some cases, simply by dissipation in the ambient air.

Quant aux liaisons entre le ou les circuits et la ou les antennes, elles peuvent se faire de façon classique, c'est-g-dire par trous métallisés, en aménageant, au préalable, des trous dans le plan de masse afin que les trous métallisés puissent traverser le plan de masse sans le toucher.As for the connections between the circuit (s) and the antenna (s), they can be made in a conventional manner, that is to say by metallized holes, by arranging, beforehand, holes in the ground plane so that the holes metallics can cross the ground plane without touching it.

Un tel assemblage nécessite un soin particulier dans la réalisation du ou des circuits électroniques qui seront faits, dans l'exemple décrit, à l'aide de puces préparées et montées selon une technique décrite plus loin. Such an assembly requires special care in the production of the electronic circuit or circuits which will be made, in the example described, using chips prepared and mounted according to a technique described below.

Selon l'invention il est proposé un assemblage antenne-circuit électronique, caractérisé en ce qu'il comporte un circuit imprimé triplaque avec une première et une seconde couche d'un substrat isolant, séparées par une plaque conductrice percée de trous, un premier et un second dépôt conducteur disposés respectivement sur la première et sur la seconde couche et constituant les faces extérieures du circuit imprimé et, passant par les trous, des liaisons électriques entre les deux dépôts, en ce que le premier dépôt est constitué, au moins pour partie, par l'antenne, en ce que le second dépôt est constitué, au moins pour partie, par des conducteurs du circuit électronique et en ce que le circuit électronique est réalisé à l'aide de puces montées par fusion d'une boule d'or entre les accès des puces et des zones du second dépôt. According to the invention, an antenna-electronic circuit assembly is proposed, characterized in that it comprises a three-plate printed circuit with a first and a second layer of an insulating substrate, separated by a conductive plate pierced with holes, a first and a second conductive deposit disposed respectively on the first and on the second layer and constituting the external faces of the printed circuit and, passing through the holes, electrical connections between the two deposits, in that the first deposit is formed, at least in part , by the antenna, in that the second deposit is constituted, at least in part, by conductors of the electronic circuit and in that the electronic circuit is produced using chips mounted by melting a ball of or between the accesses of the chips and the zones of the second deposit.

La présente invention sera mieux comprise et d'autres caractéristiques apparaitront à laide de la description ci-après et des figures s'y rapportant qui représentent:
- la figure 1, une vue de face schématisée d'un assemblage selon
l'invention,
- la figure 2 une vue en coupe de l'assemblage déjà représenté
sur la figure 1,
- les figures 3 à 8, des étapes de préparation d'une puce en vue
de son montage sur un circuit imprimé,
- les figures 9 à 11, des étapes du montage sur un substrat
récepteur d'une puce préparée selon les étapes illustrées par les
figures 3 à 8.The present invention will be better understood and other characteristics will appear from the following description and the figures relating thereto which represent:
- Figure 1, a schematic front view of an assembly according to
the invention,
- Figure 2 a sectional view of the assembly already shown
in Figure 1,
- Figures 3 to 8, steps to prepare a chip in view
of its mounting on a printed circuit,
- Figures 9 to 11, stages of mounting on a substrate
receiver of a chip prepared according to the steps illustrated by
Figures 3 to 8.

Sur les différentes figures les éléments correspondants sont désignés par les mêmes repères. Par ailleurs dans certaines figures les dimensions n'ont pas été respectées dans un souci de meilleure visibilité et donc de meilleure compréhension. In the various figures, the corresponding elements are designated by the same references. Furthermore in some figures the dimensions have not been respected for the sake of better visibility and therefore better understanding.

La figure 1 représente une antenne A constituée de quatre pavés rayonnants (patches dans la littérature anglo-saxonne), Ai à A4, de 2x2mm; cette antenne est destinée à fonctionner en émission-réception à des fréquences de l'ordre de 60 GHz, avec un angle de tir variable par déphasages différents entre les signaux reçus ou émis par les pavés rayonnants. FIG. 1 represents an antenna A made up of four radiating blocks (patches in Anglo-Saxon literature), Ai to A4, of 2x2mm; this antenna is intended to operate in transmission-reception at frequencies of the order of 60 GHz, with a variable firing angle by different phase shifts between the signals received or emitted by the radiating blocks.

L'antenne A a été réalisée par photogravure sur l'une des faces d'un circuit imprimé triplaque C formé à partir de deux couches C1, C2 d'un substrat isolant; ces couches apparaissent sur la figure 2 qui est une vue en coupe selon le plan de coupe indiqué par sa trace Xx sur la figure 1. Les couches C1, C2 sont faites à partir d'une feuille isoiante d'une épaisseur de 0,128 mm recouverte sur ses deux faces par du cuivre sur une épaisseur de 0,018mm. Par photogravure du cuivre est retiré pour laisser: - sur la première face de la couche C1, L'antenne A et un cadre E qui
apparaît sur les figures 1 et 2, - sur la seconde face de la couche C1, pratiquement tout le cuivre sauf six
trous, tels que U sur la figure 2 - sur la première face de la couche C2, également presque tout le cuivre
d'origine à l'exception là aussi de six trous qui, lorsque les couches C1,
C2 sont assemblées par collage avec une colle isolante, se trouvent en
regard des six trous de la seconde face de la couche C1 - sur la seconde face de la couche C2, des conducteurs tels que L sur la
figure 2; ces conducteurs constituent les liaisons électriques d'un circuit
électronique B formé de puces qui sont montées sur le circuit imprimé
selon un procédé décrit plus loin à l'aide des figures 3 à 11.The antenna A was produced by photoengraving on one of the faces of a triplate printed circuit C formed from two layers C1, C2 of an insulating substrate; these layers appear in Figure 2 which is a sectional view along the section plane indicated by its trace Xx in Figure 1. The layers C1, C2 are made from an insulating sheet with a thickness of 0.128 mm covered on both sides by copper over a thickness of 0.018mm. Copper photogravure is removed to leave: - on the first face of layer C1, antenna A and a frame E which
appears in Figures 1 and 2, - on the second side of layer C1, practically all of the copper except six
holes, such as U in Figure 2 - on the first side of layer C2, also almost all of the copper
original, again with the exception of six holes which, when the layers C1,
C2 are assembled by gluing with an insulating adhesive, are in
look of the six holes on the second face of layer C1 - on the second face of layer C2, conductors such as L on the
Figure 2; these conductors constitute the electrical connections of a circuit
electronic B made up of chips which are mounted on the printed circuit
according to a method described later using FIGS. 3 to 11.

Les conducteurs, de meme que les puces de la seconde face de la couche Cl, sont représentés en trait interrompus, comme vus par transparence. The conductors, as well as the chips of the second face of the layer C1, are shown in broken lines, as seen by transparency.

Pour simplifier le dessin et faciliter la compréhension, les conducteurs électriques de la seconde face de la couche C2 ont été représentés, sur la figure 1, comme s'il s'agissait d'un schéma électrique classique, c'est-à-dire sans éviter les croisements; de plus, les conducteurs relatifs à l'alimentation des puces n'ont pas été représentés. De meme, sur la figure 2, seuls quelques conducteurs, tels que L, et quelques accès, tels que D, des trois puces visibles sur ce dessin en coupe, ont été représentés. To simplify the drawing and facilitate understanding, the electrical conductors of the second face of the layer C2 have been represented, in FIG. 1, as if it were a conventional electrical diagram, that is to say without avoiding crossovers; moreover, the conductors relating to the supply of the chips have not been shown. Likewise, in FIG. 2, only a few conductors, such as L, and a few accesses, such as D, of the three chips visible in this sectional drawing, have been shown.

Le circuit électronique B de l'assemblage selon les figures 1 et 2 comporte en tout 17 puces constituant respectivement un oscillateur local H avec une entrée de commande de déphasage et huit sorties, huit circuits mélangeurs M1 à M4 et M1' à M4' et huit amplificateurs P1 à P4 et P1' à P4'.  The electronic circuit B of the assembly according to FIGS. 1 and 2 comprises a total of 17 chips constituting respectively a local oscillator H with a phase shift control input and eight outputs, eight mixer circuits M1 to M4 and M1 'to M4' and eight amplifiers P1 to P4 and P1 'to P4'.

Les amplificateurs P1 à P4 sont des amplificateurs de réception ils ont leurs entrées respectivement réunies aux quatre pavés rayonnants Al à A4 et leurs sorties respectivement réunies aux secondes entrées des circuits mélangeurs M1 à M4. Les premières entrées des circuits mélangeurs M1 à M4 sont reliées à l'oscillateur local H. The amplifiers P1 to P4 are reception amplifiers; they have their inputs respectively joined to the four radiating blocks A1 to A4 and their outputs respectively joined to the second inputs of the mixer circuits M1 to M4. The first inputs of the mixer circuits M1 to M4 are connected to the local oscillator H.

Les amplificateurs P1' à P4' sont des amplificateurs d'émission; ils ont leurs sorties respectivement réunies aux quatre pavés rayonnants Al à A4 et leurs entrées respectivement réunies aux sorties des circuits mélangeurs M1' à M4'. Les premières entrées des circuits mélangeurs M1' à
M4' sont reliées à l'oscillateur local H.Amplifiers P1 'to P4' are transmission amplifiers; they have their outputs respectively joined to the four radiating blocks A1 to A4 and their inputs respectively joined to the outputs of the mixer circuits M1 'to M4'. The first inputs of the mixer circuits M1 'to
M4 'are connected to the local oscillator H.

Le circuit électronique B comporte, en plus des liaisons indiquées ci-avant, neuf liaisons qui partent ou proviennent de la rnoitié inférieure du bord de droite du circuit imprimé C tel qu'il est représenté sur la figure 1 . II s'agit d'un conducteur relié à l'entrée de commande de phase de l'oscillateur local H de quatre conducteurs provenant des sorties des circuits mélangeurs M1 à M4 et de quatre conducteurs aboutissant aux secondes entrées des circuits mélangeurs M1' à M4'. Ces neuf liaisons, auxquelles il faut ajouter, comme il a été noté plus avant, les liaisons relatives à l'alimentation des puces, passent toutes par un connecteur K représenté sur la figure 1 avec seulement neuf fiches correspondant aux neuf liaisons. The electronic circuit B comprises, in addition to the connections indicated above, nine connections which leave or come from the lower half of the right edge of the printed circuit C as shown in FIG. 1. It is a conductor connected to the phase control input of the local oscillator H of four conductors coming from the outputs of the mixer circuits M1 to M4 and four conductors leading to the second inputs of the mixer circuits M1 'to M4 '. These nine connections, to which must be added, as noted above, the connections relating to the supply of the chips, all pass through a connector K shown in FIG. 1 with only nine plugs corresponding to the nine connections.

La fabrication de l'assemblage selon les figures 1 et 2 se fait en plusieurs étapes dont certaines sont déjà apparues dans ce qui précède et seront donc seulement mentionnées ci-après: - réalisation du circuit imprimé C par photogravure puis collage des
couches C1, C2 - réalisation de huit trous métallisés, tels que T sur la figure 2, pour relier
les pavés rayonnants de l'une des faces du circuit imprimé triplaque C
aux conducteurs de l'autre face du circuit imprimé, - montage des puces sur le circuit imprimé triplaque C; une façon
d'effectuer ce montage est décrite à l'aide des figures 3 à 11, - fixation du connecteur K sur le circuit imprimé triplaque C, - dépôt, sur la paroi du radiateur, à l'endroit où se trouveront les puces
lorsque l'assemblage sera réalisé, d'une pellicule N de pâte thermique
cette pellicule n'est représentée sur la figure 2 qu'au niveau des trois
puces visibles sur cette figure, - introduction du circuit imprimé avec ses puces et son connecteur, dans le
radiateur R ; I'introduction se fait, vue d'après la figure 1, de la droite vers
la gauche étant donné que l'extrémité de gauche du radiateur est fermée, - pose d'un couvercle S muni d'un évent de dégazage non représenté, - brasages effectués entre le radiateur R et son couvercle S, entre le
couvercle S et le connecteur K et entre le cadre E et les bords du
radiateur K et de son couvercle, - pose, par collage, d'un radome rigide, W, qui s'appuie sur le radiateur R
et le couvercle S et définit ainsi, avec le radiateur K, le couvercle S et le
connecteur K, un boitier fermé - mise en atmosphère neutre de l'intérieur du boîtier grâce à l'évent puis
fermeture de cet évent à l'aide de brasure.The manufacture of the assembly according to FIGS. 1 and 2 is done in several stages, some of which have already appeared in the foregoing and will therefore only be mentioned below: - production of the printed circuit C by photogravure then gluing of the
layers C1, C2 - production of eight metallized holes, such as T in FIG. 2, to connect
the radiating blocks of one of the faces of the triplate printed circuit C
to the conductors on the other side of the printed circuit, - mounting of the chips on the triplate printed circuit C; a way
to carry out this assembly is described with the aid of FIGS. 3 to 11, - fixing of the connector K on the triplate printed circuit C, - deposit, on the wall of the radiator, at the place where the chips will be located
when the assembly is completed, with a film N of thermal paste
this film is only represented in FIG. 2 at the level of the three
chips visible in this figure, - introduction of the printed circuit with its chips and its connector, in the
radiator R; The introduction is made, seen according to figure 1, from the right towards
the left since the left end of the radiator is closed, - fitting of a cover S provided with a degassing vent not shown, - soldering carried out between the radiator R and its cover S, between the
cover S and connector K and between frame E and the edges of the
radiator K and its cover, - fitting, by gluing, of a rigid radome, W, which rests on the radiator R
and the cover S and thus defines, with the radiator K, the cover S and the
connector K, a closed box - neutral atmosphere inside the box thanks to the vent then
closing of this vent using solder.

II est à noter que l'assemblage ainsi réalisé, non seulement assure un bon refroidissement des puces mais aussi est facilement modifiable ou réparable, il suffit pour cela de procéder à quelques décollages et débrasages relativement faciles à exécuter. It should be noted that the assembly thus produced, not only ensures good cooling of the chips but also is easily modifiable or repairable, it suffices for this to carry out a few takeoffs and debrasings relatively easy to execute.

L'assemblage selon les figures 1 et 2 a des dimensions hors-tout d'environ 16x1 Ix4,5 mm. The assembly according to Figures 1 and 2 has overall dimensions of about 16x1 Ix4.5 mm.

Dans ce qui suit est exposé le procédé qui a été employé pour monter les puces sur le circuit imprimé C de l'assemblage selon les figures i et 2. The following describes the method which was used to mount the chips on the printed circuit C of the assembly according to FIGS. I and 2.

La figure 3 est un schéma partiel, en coupe, d'une machine pour effectuer du "bail bonding", qui montre un passe-fil Cp et une électrode Ep; il est rappelé que le "ball-bonding" consiste à réaliser des liaisons électriques au moyen de fils d'or dont une extrémité a été fondue pour former une petite boule qui est pressée, par exemple ,sur un accès d'une puce pour constituer un plot qui est amené en contact, à l'endroit désiré d'un conducteur sur lequel doit être branchée la puce. Le passe-fil est également appelé capillaire du fait qu'il est percé d'un trou très fin qui sert à amener l'extrémité d'un fil d'or, Ap, au voisinage de l'électrode Ep; ce fil d'or, Ap, qui dans l'exemple décrit fait 25 micromètres de diamètre, provient d'une bobine et est relié à l'une des bornes d'un générateur de courant, non représenté, dont l'autre borne est reliée à l'électrode Ep pour produire un arc électrique entre l'extrémité du fil d'or et l'électrode. D'autres machines pour effectuer du "ball-bonding" existent dans lesquels le dispositif pour produire un arc électrique est remplacé par un chalumeau; la tête du chalumeau est disposée à l'emplacement de l'électrode Ep et sa flamme est dirigée sur l'extrémité du fil Ap. FIG. 3 is a partial diagram, in section, of a machine for performing "bail bonding", which shows a grommet Cp and an electrode Ep; it is recalled that "ball-bonding" consists in making electrical connections by means of gold wires, one end of which has been melted to form a small ball which is pressed, for example, on an access of a chip to constitute a pad which is brought into contact, at the desired location of a conductor to which the chip must be connected. The grommet is also called a capillary because it is pierced with a very fine hole which serves to bring the end of a gold wire, Ap, in the vicinity of the electrode Ep; this gold wire, Ap, which in the example described is 25 micrometers in diameter, comes from a coil and is connected to one of the terminals of a current generator, not shown, the other terminal of which is connected to the Ep electrode to produce an electric arc between the end of the gold wire and the electrode. Other machines for performing "ball-bonding" exist in which the device for producing an electric arc is replaced by a torch; the head of the torch is placed at the location of the electrode Ep and its flame is directed on the end of the wire Ap.

L'arc électrique fait fondre l'extrémité du fil Ap, ce qui produit une boule Bp comme représenté sur la figure 4; cette boule a, dans l'exemple décrit, un diamètre d'environ 50 micromètres. The electric arc melts the end of the wire Ap, which produces a ball Bp as shown in Figure 4; this ball has, in the example described, a diameter of about 50 micrometers.

La boule Bp est alors soudée sur un des accès d'une puce 1, comme représenté sur (a vue en coupe de la figure 5. Pour cela la puce 1 est au préalable placée sur un substrat intermédiaire, Sp, aussi appelé substrat outil et le substrat intermédiaire est placé sur une plaque chauffante, non représentée sur la figure 5, mais qui apparaîtra sur la figure 7; le passe-fil Cp est abaissé, selon la flèche Ft, pour venir presser la boule
Bp à l'endroit choisi de la puce 1. Pendant les opérations de soudure une source d'ultrasons de niveau réglable, non représentée, est reliée au passefil Cp pour faciliter les soudures.The ball Bp is then welded onto one of the accesses of a chip 1, as shown in (a section view of FIG. 5. For this, the chip 1 is first placed on an intermediate substrate, Sp, also called the tool substrate and the intermediate substrate is placed on a heating plate, not shown in FIG. 5, but which will appear in FIG. 7; the grommet Cp is lowered, according to the arrow Ft, to press the ball
Bp at the chosen location of the chip 1. During the welding operations a source of ultrasound of adjustable level, not shown, is connected to the pass-through Cp to facilitate the welds.

La figure 6 montre que, dans la suite des opérations, une partie du fil d'or Ap, solidaire de la boule Bp, est extraite du passe-fil Cp et que le passe-fil est abaissé, selon la flèche F2, pour venir écraser le fil Ap sur le substrat intermédiaire, Sp, afin d'assurer sa fixation par soudure sur le pellicule d'or que comporte le substrat Sp sur sa face en contact avec la puce 1. Après cette soudure avec écrasement, le passe-fil est relevé en même temps qu'une pince J solidaire du passe-fil et qui n'a été représentée que sur la figure 6, se referme bloquant le fil; il en résulte une rupture du fil d'or à la sortie du passe-fil Cp. II est à noter que cette soudure est volontairement réalisée de façon imparfaite par réglage de la pression d'écrasement, du niveau et de la durée des ultrasons, afin de pouvoir la "décoller" facilement par la suite. FIG. 6 shows that, in the following operations, part of the gold thread Ap, secured to the ball Bp, is extracted from the grommet Cp and that the grommet is lowered, according to arrow F2, to come crush the wire Ap on the intermediate substrate, Sp, in order to ensure its fixing by welding on the gold film that the substrate Sp has on its face in contact with the chip 1. After this welding with crushing, the grommet is raised at the same time as a clamp J secured to the grommet and which has only been shown in FIG. 6, closes blocking the wire; this results in a break in the gold wire at the outlet of the grommet Cp. It should be noted that this welding is deliberately carried out imperfectly by adjusting the crushing pressure, the level and the duration of the ultrasound, in order to be able to "take off" easily thereafter.

La figure 7 montre la liaison réalisée par la boule Bp et un segment de fil Dp, entre la puce 1 et le substrat intermédiaire Sp; il s'agit de la liaison obtenue selon le procédé décrit à l'aide des figures 3 à 6. La figure 7 est un dessin en coupe qui permet de voir comment la puce 1 et le substrat intermédiaire Sp sont disposés sur une plaque chauffante Tp portée à 110"C, pour réaliser les opérations décrites à l'aide des figures 5 et 6; la plaque chauffante Tp et le substrat intermédiaire Sp sont percés chacun d'un trou et les deux trous sont placés l'un au < lessus de l'autre - la puce 1 est disposée sur le substrat intermédiaire Sp au-dessus des deux trous - une pompe aspirante, Pp, située sous la plaque Sp et créant une dépression figurée par une flèche V, maintient en position l'ensemble puce-substrat intermédiaire sur ia plaque chauffante. FIG. 7 shows the connection made by the ball Bp and a segment of wire Dp, between the chip 1 and the intermediate substrate Sp; this is the connection obtained according to the method described using FIGS. 3 to 6. FIG. 7 is a sectional drawing which makes it possible to see how the chip 1 and the intermediate substrate Sp are arranged on a heating plate Tp brought to 110 "C, to carry out the operations described with the aid of FIGS. 5 and 6; the heating plate Tp and the intermediate substrate Sp are each drilled with a hole and the two holes are placed one above the < the other - the chip 1 is placed on the intermediate substrate Sp above the two holes - a suction pump, Pp, located under the plate Sp and creating a depression represented by an arrow V, keeps the chip assembly in position - intermediate substrate on the hot plate.

Après que les liaisons relatives à chacun des accès de la puce 1 aient été réalisées, la puce est séparée de son substrat intermédiaire et se présente comme indiqué sur la figure 8 où apparaissent sept ensembles boule-segment de fil tels que l'ensemble Bi-Di. Cette séparation est rendue possible en raison de la soudure imparfaite réalisée lors de l'étape du procédé décrite à l'aide de la figure 6. Il est à remarquer que les segments de fils tels que Di sont disposés perpendiculairement au bord le plus proche de l'accès sur lequel est soudée la boule dont ils sont solidaires. After the connections relating to each of the accesses of the chip 1 have been made, the chip is separated from its intermediate substrate and is presented as shown in FIG. 8 where seven ball-segment of wire assemblies appear such as the assembly Bi- Sun. This separation is made possible due to the imperfect weld made during the process step described with the aid of FIG. 6. It should be noted that the segments of wires such as Di are arranged perpendicular to the edge closest to the access on which the ball with which they are attached is welded.

Le procédé est poursuivi de la façon préconisée ci-après et illustrée, par les figures 9 à 11, afin d'assurer un montage de type puce à bosses jusqu'à son terme. The process is continued in the manner recommended below and illustrated, in FIGS. 9 to 11, in order to ensure mounting of the bump chip type until its completion.

Par sérigraphie à l'aide d'un pochoir, Mp, réalisé par photogravure, une crème à souder est déposée aux endroits d'un substrat récepteur destinés à être en contact avec les boules d'or, Bi, de la puce 1.  By screen printing using a stencil, Mp, produced by photoengraving, a solder cream is deposited at the locations of a receiving substrate intended to be in contact with the gold balls, Bi, of the chip 1.

Le pochoir Mp est représenté sans son cadre sur la figure 9; il permet le dépôt de la crème à souder aux endroits voulus du substrat récepteur et est percé pour cela de trous, tels que Qi, obtenus lors de la photogravure.The stencil Mp is shown without its frame in Figure 9; it allows the deposit of the soldering cream at the desired locations on the receiving substrate and is pierced for this by holes, such as Qi, obtained during photogravure.

La figure 10 montre une partie d'un substrat récepteur 2 destiné à recevoir la puce 1 selon la figure 8 et comportant, à cet effet, des pistes conductrices telles que Hi. Le substrat 2 est représenté après que des petits dépôts de crème à souder, tels que Gi, aient été obtenus en différents endroits de sa surface à l'aide du pochoir selon la figure 9; sur la figure 10 ces dépôts sont représentés par de petites surfaces hachurées. Dans l'exemple décrit la crème à souder est un mélange à 88% de métal et 12% de liant et de résine avec, pour la partie métal, 80% d'indium, 15% de plomb et 5% d'argent. FIG. 10 shows part of a receiving substrate 2 intended to receive the chip 1 according to FIG. 8 and comprising, for this purpose, conductive tracks such as Hi. The substrate 2 is shown after small deposits of soldering cream, such as Gi, have been obtained in different places on its surface using the stencil according to FIG. 9; in Figure 10 these deposits are represented by small hatched areas. In the example described, the soldering cream is a mixture of 88% metal and 12% binder and resin with, for the metal part, 80% indium, 15% lead and 5% silver.

La figure 11 montre la puce 1 de la figure 8 posée sur le substrat récepteur 2 de la figure 10, lui-même placé sur une plaque chauffante, Tp, représentée par un contour en traits interrompus qui ne délimite qu'une partie de la plaque chauffante; cette plaque est portée à 170"C. Comme il apparait sur cette figure, les segments de fils tels que Di constituent de bons repères pour positionner la puce 1 sur son substrat récepteur 2. La plaque chauffante Tp sert à produire une fusion de la crème à souder et ainsi à donner des soudures au niveau des dépôts de crème à souder ctest-å-dire là où les boules, telles que Bi, de la puce i et les pistes conductrices du substrat récepteur 2 sont en contact. Le montage ainsi obtenu est, au choix, recouvert d'une résine de protection ou protégé par un boîtier isolant scellé; dans le cas de l'exemple décrit à l'aide des figures 1 et 2 c'est le boîtier, formé du radiateur R, du radôme W, du couvercle S et du connecteur K, qui assure cette protection. FIG. 11 shows the chip 1 of FIG. 8 placed on the receiving substrate 2 of FIG. 10, itself placed on a heating plate, Tp, represented by an outline in broken lines which delimits only part of the plate heating; this plate is brought to 170 "C. As it appears in this figure, the segments of wires such as Di constitute good marks for positioning the chip 1 on its receiving substrate 2. The heating plate Tp is used to produce a melting of the cream to be soldered and thus to give welds at the level of the soldering cream deposits, that is to say where the balls, such as Bi, of the chip i and the conductive tracks of the receiving substrate 2 are in contact. is, as desired, covered with a protective resin or protected by a sealed insulating box; in the case of the example described using FIGS. 1 and 2, it is the box, formed by the radiator R, the radome W, cover S and connector K, which provides this protection.

La présente invention n'est pas limitée à l'exemple décrit, elle s'applique de façon générale a des assemblages antenne-circuit électronique où l'antenne est sur une des faces d'un circuit imprimé triplaque tandis que tout ou partie du circuit électronique associé à cette antenne est implanté sur l'autre face du circuit imprimé et qu'une plaque métallique est disposée å l'intérieur du circuit imprimé triplaque pour jouer le rôle de plan de masse.  The present invention is not limited to the example described, it generally applies to antenna-electronic circuit assemblies where the antenna is on one of the faces of a triplate printed circuit while all or part of the circuit electronics associated with this antenna is located on the other side of the printed circuit and a metal plate is placed inside the triplate printed circuit to play the role of ground plane.

Claims (5)

REVENDICATIONS 1. Assemblage antenne-circuit électronique, caractérisé en ce qu'il comporte un circuit imprimé triplaque (C) avec une première (Ci) et une seconde (C2) couche d'un substrat isolant, séparées par une plaque conductrice (G) percée de trous, un premier (E, A) et un second (L) dépdt conducteur disposés respectivement sur la première et sur la seconde couche et constituant les faces extérieures du circuit imprimé et, passant par les trous, des liaisons électriques (T) entre les deux dépôts, en ce que le premier dépôt est constitué, au moins pour partie, par l'antenne (A), en ce que le second dépôt est constitué, au moins pour partie, par des conducteurs (L) du circuit électronique (B) et en ce que le circuit électronique (B) est réalisé à l'aide de puces (H, P1-P4, P1'-P4', M1-M4, 1. Antenna-electronic circuit assembly, characterized in that it comprises a triplate printed circuit (C) with a first (Ci) and a second (C2) layer of an insulating substrate, separated by a conductive plate (G) pierced of holes, a first (E, A) and a second (L) depdt conductor respectively disposed on the first and on the second layer and constituting the external faces of the printed circuit and, passing through the holes, electrical connections (T) between the two deposits, in that the first deposit is formed, at least in part, by the antenna (A), in that the second deposit is constituted, at least in part, by conductors (L) of the electronic circuit ( B) and in that the electronic circuit (B) is produced using chips (H, P1-P4, P1'-P4 ', M1-M4, M1'-M4') montées par fusion d'une boule d'or-(Bi) entre les accès des puces (D) et des zones du second dépôt.M1'-M4 ') mounted by fusion of a gold ball (Bi) between the accesses of the chips (D) and areas of the second deposit. 2. Assemblage selon la revendication 1, caractérisé en ce qu'il comporte un élément dissipateur d'énergie thermique (R), thermiquement couplé aux puces. 2. Assembly according to claim 1, characterized in that it comprises a thermal energy dissipating element (R), thermally coupled to the chips. 3. Assemblage selon la revendication 2, caractérisé en ce que l'élément dissipateur (R) comporte une paroi dont une face est munie d'ailettes et dont l'autre est en appui sur les puces. 3. Assembly according to claim 2, characterized in that the dissipating element (R) has a wall, one face of which is provided with fins and the other of which is in contact with the chips. 4. Assemblage selon la revendication 2 ou 3, caractérisé en ce que l'élément dissipateur constitue, pour le circuit imprimé, un boitier muni d'ouvertures, dont une ouverture principale destinée à permettre le rayonnement de l'antenne et une ouverture secondaire munie d'un connecteur relié au circuit imprimé et constituant un moyen de branchement électrique de l'assemblage. 4. An assembly according to claim 2 or 3, characterized in that the dissipating element constitutes, for the printed circuit, a box provided with openings, including a main opening intended to allow the radiation of the antenna and a secondary opening provided a connector connected to the printed circuit and constituting a means of electrical connection of the assembly. 5. Assemblage selon la revendication 4, caractérisé en ce que l'ouverture principale est fermée par un radome (W) et l'ouverture secondaire par un couvercle (S).  5. Assembly according to claim 4, characterized in that the main opening is closed by a radome (W) and the secondary opening by a cover (S).
FR9310932A 1993-09-14 1993-09-14 Antenna-electronic circuit assembly. Expired - Fee Related FR2710195B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9310932A FR2710195B1 (en) 1993-09-14 1993-09-14 Antenna-electronic circuit assembly.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9310932A FR2710195B1 (en) 1993-09-14 1993-09-14 Antenna-electronic circuit assembly.

Publications (2)

Publication Number Publication Date
FR2710195A1 true FR2710195A1 (en) 1995-03-24
FR2710195B1 FR2710195B1 (en) 1995-10-13

Family

ID=9450847

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9310932A Expired - Fee Related FR2710195B1 (en) 1993-09-14 1993-09-14 Antenna-electronic circuit assembly.

Country Status (1)

Country Link
FR (1) FR2710195B1 (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996038878A1 (en) * 1995-06-02 1996-12-05 Dsc Communications Corporation Integrated directional antenna
WO1997002733A2 (en) * 1995-07-07 1997-01-30 He Holdings, Inc., Doing Business As Hughes Electronics Microwave/millimeter wave circuit structure with discrete flip-chip mounted elements, and method of fabricating the same
FR2745119A1 (en) * 1996-02-16 1997-08-22 Thomson Csf Microwave chip encapsulation housing
EP0829923A1 (en) * 1996-09-16 1998-03-18 Alcatel Espace Device with radiating elements
WO1998029922A1 (en) * 1996-12-31 1998-07-09 Ericsson Inc. Method for integrating antennas in a distributed antenna system
FR2758908A1 (en) * 1997-01-24 1998-07-31 Thomson Csf Low cost surface-mountable microwave package
EP0884863A2 (en) * 1997-06-12 1998-12-16 Radio Communication Systems Limited Distributed antenna for personal communication system
WO1999021246A1 (en) * 1997-10-21 1999-04-29 Interwave Communications, Inc. Self-contained masthead units for cellular communication networks
WO2000017960A1 (en) * 1998-09-18 2000-03-30 Tantivy Communications, Inc. Antenna array structure stacked over printed wiring board with beamforming components
WO2000045462A1 (en) * 1999-01-28 2000-08-03 Robert Bosch Gmbh Housing for an electronic apparatus in microwave technology
US6100853A (en) * 1997-09-10 2000-08-08 Hughes Electronics Corporation Receiver/transmitter system including a planar waveguide-to-stripline adapter
EP1231672A2 (en) * 2001-02-09 2002-08-14 Kabushiki Kaisha Toshiba Vehicle antenna apparatus
EP1307078A2 (en) * 2001-10-25 2003-05-02 Hitachi, Ltd. High frequency circuit module
WO2004013934A1 (en) * 2002-08-01 2004-02-12 Raytheon Company Dielectric interconnect frame incorporating emi shield and hydrogen absorber for tile t/r modules
EP1462822A1 (en) * 2001-11-09 2004-09-29 Hitachi, Ltd. Mobile millimetric wave radar
EP1515389A1 (en) * 2003-09-10 2005-03-16 TDK Corporation Multilayer high frequency device with planar antenna thereon and manufacturing method thereof
EP1655803A1 (en) * 2004-11-05 2006-05-10 Hitachi, Ltd. High frequency antenna device and method of manufacturing the same
WO2006059230A1 (en) * 2004-12-01 2006-06-08 Finglas Technologies Limited Antenna assembly
DE102009018834A1 (en) * 2008-12-18 2010-06-24 Mitsumi Electric Co., Ltd., Tama antenna device
CN102712520A (en) * 2010-01-29 2012-10-03 E·I·内穆尔杜邦公司 Method of manufacturing high frequency receiving and/or transmitting devices from low temperature co fired ceramic materials and devices made therefrom
WO2019058646A1 (en) * 2017-09-22 2019-03-28 株式会社フジクラ Wireless communication module

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62295501A (en) * 1986-06-14 1987-12-22 Matsushita Electric Works Ltd Vplane antenna
EP0325701A1 (en) * 1987-11-13 1989-08-02 Dornier Gmbh Antenna structure
EP0432647A2 (en) * 1989-12-11 1991-06-19 Kabushiki Kaisha Toyota Chuo Kenkyusho Mobile antenna system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62295501A (en) * 1986-06-14 1987-12-22 Matsushita Electric Works Ltd Vplane antenna
EP0325701A1 (en) * 1987-11-13 1989-08-02 Dornier Gmbh Antenna structure
EP0432647A2 (en) * 1989-12-11 1991-06-19 Kabushiki Kaisha Toyota Chuo Kenkyusho Mobile antenna system

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
AN ET AL.: "SIMPLE TRANSMISSION LINE FEED MODEL FOR MICROSTRIP ANTENNAS IN TWO-SIDED STRUCTURE WITH COAXIAL PROBE COUPLING", ELECTRONICS LETTERS., vol. 28, no. 18, 27 August 1992 (1992-08-27), STEVENAGE GB, pages 1722 - 1724 *
LAM ET AL.: "MILLIMETER-WAVE ACTIVE PATCH ANTENNA", 1990 INTERNATIONAL SYMPOSIUM DIGEST ANTENNAS AND PROPAGATION, vol. II, May 1990 (1990-05-01), DALLAS,TEXAS, pages 791 - 794 *
PATENT ABSTRACTS OF JAPAN vol. 12, no. 193 (E - 617) 4 June 1988 (1988-06-04) *
RAZBAN ET AL.: "WEATHER FORECASTING RADAR ANTENNA: AN APPLICATION OF ACTIVE MICROSTRIP ANTENNAS", CONFERENCE PROCEEDINGS 22ND EUROPEAN MICROWAVE CONFERENCE 92, vol. 2, August 1992 (1992-08-01), HELSINKI,FINLAND, pages 888 - 893 *

Cited By (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5828339A (en) * 1995-06-02 1998-10-27 Dsc Communications Corporation Integrated directional antenna
WO1996038878A1 (en) * 1995-06-02 1996-12-05 Dsc Communications Corporation Integrated directional antenna
GB2301712B (en) * 1995-06-02 2000-02-23 Dsc Communications Integrated directional antenna
WO1997002733A2 (en) * 1995-07-07 1997-01-30 He Holdings, Inc., Doing Business As Hughes Electronics Microwave/millimeter wave circuit structure with discrete flip-chip mounted elements, and method of fabricating the same
WO1997002733A3 (en) * 1995-07-07 1997-08-21 Hughes Aircraft Co Microwave/millimeter wave circuit structure with discrete flip-chip mounted elements, and method of fabricating the same
US5757074A (en) * 1995-07-07 1998-05-26 Hughes Electronics Corporation Microwave/millimeter wave circuit structure with discrete flip-chip mounted elements
FR2745119A1 (en) * 1996-02-16 1997-08-22 Thomson Csf Microwave chip encapsulation housing
US5982328A (en) * 1996-09-16 1999-11-09 Alcatel Espace Device with radiating elements
EP0829923A1 (en) * 1996-09-16 1998-03-18 Alcatel Espace Device with radiating elements
FR2753569A1 (en) * 1996-09-16 1998-03-20 Alcatel Espace RADIANT ELEMENT DEVICE
WO1998029922A1 (en) * 1996-12-31 1998-07-09 Ericsson Inc. Method for integrating antennas in a distributed antenna system
FR2758908A1 (en) * 1997-01-24 1998-07-31 Thomson Csf Low cost surface-mountable microwave package
EP0884863A2 (en) * 1997-06-12 1998-12-16 Radio Communication Systems Limited Distributed antenna for personal communication system
US6381473B1 (en) 1997-06-12 2002-04-30 Radio Communication Systems Ltd. Distributed antenna for personal communication system
EP0884863A3 (en) * 1997-06-12 2000-07-19 Radio Communication Systems Limited Distributed antenna for personal communication system
US6100853A (en) * 1997-09-10 2000-08-08 Hughes Electronics Corporation Receiver/transmitter system including a planar waveguide-to-stripline adapter
US6268781B1 (en) 1997-09-10 2001-07-31 Hughes Electronics Corporation Planar waveguide-to-stripline adapter
WO1999021246A1 (en) * 1997-10-21 1999-04-29 Interwave Communications, Inc. Self-contained masthead units for cellular communication networks
US6912409B2 (en) 1997-10-21 2005-06-28 Interwave Communications International, Ltd. Self-contained masthead units for cellular communication networks
US6269255B1 (en) 1997-10-21 2001-07-31 Interwave Communications International, Ltd. Self-contained masthead units for cellular communication networks
US6362790B1 (en) 1998-09-18 2002-03-26 Tantivy Communications, Inc. Antenna array structure stacked over printed wiring board with beamforming components
WO2000017960A1 (en) * 1998-09-18 2000-03-30 Tantivy Communications, Inc. Antenna array structure stacked over printed wiring board with beamforming components
US6600103B1 (en) 1999-01-28 2003-07-29 Robert Bosch Gmbh Housing for an electronic device in microwave technology
WO2000045462A1 (en) * 1999-01-28 2000-08-03 Robert Bosch Gmbh Housing for an electronic apparatus in microwave technology
EP1231672A2 (en) * 2001-02-09 2002-08-14 Kabushiki Kaisha Toshiba Vehicle antenna apparatus
EP1231672A3 (en) * 2001-02-09 2003-05-28 Kabushiki Kaisha Toshiba Vehicle antenna apparatus
US7239222B2 (en) 2001-10-25 2007-07-03 Hitachi, Ltd. High frequency circuit module
EP1307078A3 (en) * 2001-10-25 2004-01-28 Hitachi, Ltd. High frequency circuit module
US6794961B2 (en) 2001-10-25 2004-09-21 Hitachi, Ltd. High frequency circuit module
EP1307078A2 (en) * 2001-10-25 2003-05-02 Hitachi, Ltd. High frequency circuit module
EP1462822A1 (en) * 2001-11-09 2004-09-29 Hitachi, Ltd. Mobile millimetric wave radar
EP1462822A4 (en) * 2001-11-09 2009-09-23 Hitachi Ltd Mobile millimetric wave radar
WO2004013934A1 (en) * 2002-08-01 2004-02-12 Raytheon Company Dielectric interconnect frame incorporating emi shield and hydrogen absorber for tile t/r modules
EP1515389A1 (en) * 2003-09-10 2005-03-16 TDK Corporation Multilayer high frequency device with planar antenna thereon and manufacturing method thereof
US7236070B2 (en) 2003-09-10 2007-06-26 Tdk Corporation Electronic component module and manufacturing method thereof
US7456790B2 (en) 2004-11-05 2008-11-25 Hitachi, Ltd. High frequency antenna device and method of manufacturing the same, HF antenna printed circuit board for HF antenna device, and transmitting and receiving device using HF antenna device
EP1655803A1 (en) * 2004-11-05 2006-05-10 Hitachi, Ltd. High frequency antenna device and method of manufacturing the same
WO2006059230A1 (en) * 2004-12-01 2006-06-08 Finglas Technologies Limited Antenna assembly
US7782268B2 (en) 2004-12-01 2010-08-24 Kavveri Telecom Products Limited Antenna assembly
DE102009018834A1 (en) * 2008-12-18 2010-06-24 Mitsumi Electric Co., Ltd., Tama antenna device
US8111197B2 (en) 2008-12-18 2012-02-07 Mitsumi Electric Co., Ltd. Antenna apparatus
CN102712520A (en) * 2010-01-29 2012-10-03 E·I·内穆尔杜邦公司 Method of manufacturing high frequency receiving and/or transmitting devices from low temperature co fired ceramic materials and devices made therefrom
CN102712520B (en) * 2010-01-29 2016-06-01 E·I·内穆尔杜邦公司 The method being manufactured high-frequency reception and/or discharger by low-temperature co-burning ceramic material and the device being produced from
WO2019058646A1 (en) * 2017-09-22 2019-03-28 株式会社フジクラ Wireless communication module
JP2019057896A (en) * 2017-09-22 2019-04-11 株式会社フジクラ Radio communication module
US11211696B2 (en) 2017-09-22 2021-12-28 Fujikura Ltd. Wireless communication module

Also Published As

Publication number Publication date
FR2710195B1 (en) 1995-10-13

Similar Documents

Publication Publication Date Title
FR2710195A1 (en) Antenna-electronic circuit assembly
EP0308296B1 (en) Printed circuit comprising a heat sink
EP1792526B1 (en) Electronic device provided with an integrated heat spreader
EP0310463A1 (en) Housing for a high-density integrated circuit
EP0159208B1 (en) Method of manufacturing miniaturized electronic power circuits
JPH04293310A (en) Surface acoustic wave device
EP0589748B1 (en) Process preparing a chip to be mounted on a substrate
JP2001007642A (en) Oscillator and oscillation characteristic adjustment method therefor
EP0717442B1 (en) Integrated circuit support to be connected to another support by means of bumps
CA1218739A (en) Composite substrate for electronic components
EP0083265B1 (en) Interconnection carrier on a printed circuit for an integrated-circuit housing, and interconnection system utilizing such a carrier
FR2573272A1 (en) PROCESS FOR PRODUCING A SUBSTRATE COMPRISING A COAXIAL CONDUCTOR
FR2547112A1 (en) METHOD FOR PRODUCING A HYBRID CIRCUIT AND LOGIC OR ANALOGIC HYBRID CIRCUIT
EP0368741A1 (en) Integrated-circuit support and its manufacturing method, integrated circuit adapted to the support and resulting housings
JP3192699B2 (en) Microstrip antenna and method of manufacturing the same
FR2790905A1 (en) POWER ELECTRICAL COMPONENT MOUNTED BY BRAZING ON A SUPPORT AND ASSEMBLY METHOD THEREFOR
FR2529385A1 (en) MICROBOITIER FOR ENCAPSULATION OF LOGIC INTEGRATED CIRCUITS OPERATING IN VERY HIGH FREQUENCY
FR2758908A1 (en) Low cost surface-mountable microwave package
EP1036489B1 (en) Method for surface mounting of a microwave package on a printed circuit and package and printed circuit for implementing said method
EP0065443B1 (en) Encapsulating housing for a power semiconductor functioning in a 2 to 20 ghz frequency range
CA1094213A (en) No translation available
JP3652279B2 (en) Semiconductor element storage package and semiconductor device
JP2794616B2 (en) Semiconductor hybrid integrated circuit
FR2704114A1 (en) Casing structure for an electronic device of the surface-mounting type, and method of mounting such a structure on a printed-wiring board
FR2954667A1 (en) Multi-layer printed circuit board for e.g. digital circuit with ultra high frequency, has elementary printed circuit board provided with metal holes that permit inter-connection of two external faces of elementary printed circuit board

Legal Events

Date Code Title Description
ST Notification of lapse