FR2396419A1 - DIODE CAPABLE OF OPERATING AS EMITTER AND LIGHT DETECTOR OF THE SAME WAVELENGTH ALTERNATIVELY - Google Patents

DIODE CAPABLE OF OPERATING AS EMITTER AND LIGHT DETECTOR OF THE SAME WAVELENGTH ALTERNATIVELY

Info

Publication number
FR2396419A1
FR2396419A1 FR7719616A FR7719616A FR2396419A1 FR 2396419 A1 FR2396419 A1 FR 2396419A1 FR 7719616 A FR7719616 A FR 7719616A FR 7719616 A FR7719616 A FR 7719616A FR 2396419 A1 FR2396419 A1 FR 2396419A1
Authority
FR
France
Prior art keywords
operating
emitter
light detector
diode capable
same wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7719616A
Other languages
French (fr)
Other versions
FR2396419B1 (en
Inventor
Jean-Claude Carballes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7719616A priority Critical patent/FR2396419A1/en
Priority to US05/918,263 priority patent/US4202000A/en
Priority to CA306,093A priority patent/CA1106483A/en
Priority to GB7727890A priority patent/GB2000373B/en
Priority to DE2828195A priority patent/DE2828195C2/en
Priority to JP7793878A priority patent/JPS5411691A/en
Publication of FR2396419A1 publication Critical patent/FR2396419A1/en
Application granted granted Critical
Publication of FR2396419B1 publication Critical patent/FR2396419B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40—Transceivers
    • H04B10/43—Transceivers using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4246—Bidirectionally operating package structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention a pour objet une diode capable de fonctionner au détecteur et emetteur de lumière alternativement et dans la même bande de fréquences. Cette diode comporte une zone active insérée entre deux zones de localisation, et formant respectivement avec ses zones deux hétérojonctions. La tension de polarisation en inverse est telle que ladite zone active soit le siège du phénomène d'avalanche. L'invention s'applique aux télécommunications par fibres optiques.The subject of the invention is a diode capable of operating at the detector and light emitter alternately and in the same frequency band. This diode comprises an active zone inserted between two localization zones, and forming respectively with its zones two heterojunctions. The reverse bias voltage is such that said active zone is the site of the avalanche phenomenon. The invention applies to telecommunications by optical fibers.

FR7719616A 1977-06-27 1977-06-27 DIODE CAPABLE OF OPERATING AS EMITTER AND LIGHT DETECTOR OF THE SAME WAVELENGTH ALTERNATIVELY Granted FR2396419A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7719616A FR2396419A1 (en) 1977-06-27 1977-06-27 DIODE CAPABLE OF OPERATING AS EMITTER AND LIGHT DETECTOR OF THE SAME WAVELENGTH ALTERNATIVELY
US05/918,263 US4202000A (en) 1977-06-27 1978-06-22 Diode capable of alternately functioning as an emitter and detector of light of the same wavelength
CA306,093A CA1106483A (en) 1977-06-27 1978-06-23 Diode capable of alternately functioning as an emitter and detector of light of the same wavelength
GB7727890A GB2000373B (en) 1977-06-27 1978-06-26 A diode capable of alternately functioning as an emitter and detector of light of the same wavelength
DE2828195A DE2828195C2 (en) 1977-06-27 1978-06-27 Light transmitting and receiving arrangement with a semiconductor diode
JP7793878A JPS5411691A (en) 1977-06-27 1978-06-27 Luminous and light receiving diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7719616A FR2396419A1 (en) 1977-06-27 1977-06-27 DIODE CAPABLE OF OPERATING AS EMITTER AND LIGHT DETECTOR OF THE SAME WAVELENGTH ALTERNATIVELY

Publications (2)

Publication Number Publication Date
FR2396419A1 true FR2396419A1 (en) 1979-01-26
FR2396419B1 FR2396419B1 (en) 1982-02-05

Family

ID=9192610

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7719616A Granted FR2396419A1 (en) 1977-06-27 1977-06-27 DIODE CAPABLE OF OPERATING AS EMITTER AND LIGHT DETECTOR OF THE SAME WAVELENGTH ALTERNATIVELY

Country Status (6)

Country Link
US (1) US4202000A (en)
JP (1) JPS5411691A (en)
CA (1) CA1106483A (en)
DE (1) DE2828195C2 (en)
FR (1) FR2396419A1 (en)
GB (1) GB2000373B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475803A1 (en) * 1980-02-07 1981-08-14 Zaidan Hojin Handotai Kenkyu HETERO-JUNCTION LIGHT EMITTING DIODE
DE3346342A1 (en) * 1982-12-28 1986-06-12 Thomson-Csf, Paris OPTICAL COUPLING DEVICE WITH SWIVEL COUPLING

Families Citing this family (51)

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US4317232A (en) * 1979-01-12 1982-02-23 Deere & Company Fiber optic signal conditioning circuit
JPS56168685A (en) * 1980-05-30 1981-12-24 Sharp Kk Electrochromatic display unit
DE3046140A1 (en) * 1980-12-06 1982-07-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt "SIGNAL TRANSFER METHOD, A SEMICONDUCTOR COMPONENT AND AN ELECTRO-OPTICAL COMPONENT FOR CARRYING OUT THE PROCESS"
DE3205461C2 (en) * 1982-02-16 1986-06-26 Siemens AG, 1000 Berlin und 8000 München Semiconductor photodiode
US4439497A (en) * 1982-05-27 1984-03-27 Shell Oil Company Ultrasonic sound absorber
US4424524A (en) * 1982-07-02 1984-01-03 Xerox Corporation Read/write bar for multi-mode reproduction machine
US4424523A (en) * 1982-07-02 1984-01-03 Xerox Corporation Read/write bar for multi-mode reproduction machine
DE3227682A1 (en) * 1982-07-24 1984-02-02 Siemens Ag Integrated photodiodes as a wavelength-selective demultiplexer device
DE3329719A1 (en) * 1983-08-17 1985-03-07 Siemens Ag PHOTODIOD WITH RESONATOR STRUCTURE FOR INCREASING ABSORPTION
DE3413667A1 (en) * 1984-04-11 1985-10-17 Siemens AG, 1000 Berlin und 8000 München METHOD FOR ADJUSTING A COUPLING OPTICS PROVIDED AT THE END OF AN OPTICAL WAVE GUIDE TO A SEMICONDUCTOR LASER, AND DEVICE FOR CARRYING OUT THE METHOD
DE3424412A1 (en) * 1984-07-03 1986-01-16 M.A.N.- Roland Druckmaschinen AG, 6050 Offenbach CONTROL DEVICE FOR AN ACTUATOR ON A PRINTING MACHINE
GB2177868B (en) * 1985-07-11 1989-02-22 Stc Plc Fibre optic network component
US4754141A (en) * 1985-08-22 1988-06-28 High Technology Sensors, Inc. Modulated infrared source
US4773074A (en) * 1987-02-02 1988-09-20 University Of Delaware Dual mode laser/detector diode for optical fiber transmission lines
GB2207500B (en) * 1987-07-29 1991-04-24 Gen Electric Co Plc Light sensing arrangement
GB2209105A (en) * 1987-08-26 1989-04-26 Philips Nv Infra-red receiver
US4948960A (en) * 1988-09-20 1990-08-14 The University Of Delaware Dual mode light emitting diode/detector diode for optical fiber transmission lines
DE3916205A1 (en) * 1989-05-18 1990-11-29 Licentia Gmbh Semiconductor diode with barrier layer - allowing current-voltage characteristic modification by light radiation
JP2710171B2 (en) * 1991-02-28 1998-02-10 日本電気株式会社 Surface input / output photoelectric fusion device
JPH05196980A (en) * 1991-11-18 1993-08-06 Ricoh Co Ltd Optical exclusive or computing element
DE4205324A1 (en) * 1992-02-21 1993-08-26 Daimler Benz Ag Opto-electronic semiconductor element - comprises absorption layer sepd. from active zone
US5448082A (en) * 1994-09-27 1995-09-05 Opto Diode Corporation Light emitting diode for use as an efficient emitter or detector of light at a common wavelength and method for forming the same
US5631757A (en) * 1995-06-07 1997-05-20 Lucent Technologies Inc. Full-duplex data communication system using different transmit and receive data symbol lengths
JP3147141B2 (en) * 1995-08-30 2001-03-19 株式会社日立製作所 Light assembly
DE19537542A1 (en) * 1995-10-09 1997-04-10 Telefunken Microelectron Semiconductor LED device for display and illumination applications
KR20040076330A (en) * 2003-02-25 2004-09-01 삼성전자주식회사 Silicon optoelectronic device and optical signal input/output apparatus applying it
FR2858125B1 (en) 2003-07-23 2005-08-26 Commissariat Energie Atomique RESONANT CAVITY DIODE OPERATING AT THE SAME WAVELENGTH FOR EMISSION AND LIGHT DETECTION
US7042341B2 (en) * 2003-08-12 2006-05-09 Overhead Door Corporation Device including light emitting diode as light sensor and light source
US7228683B2 (en) * 2004-07-21 2007-06-12 General Electric Company Methods and apparatus for generating gas turbine engine thrust using a pulse detonator
CN101002326B (en) * 2004-07-28 2012-07-18 量子半导体有限公司 Photonic devices monolithically integrated with cmos
WO2006063952A1 (en) * 2004-12-16 2006-06-22 Siemens Aktiengesellschaft Organic-based electronic component containing pixels
US20100085328A1 (en) * 2008-10-08 2010-04-08 Hewlett-Packard Development Company, L.P. Touch-Sensitive Display Device And Method
US9207851B1 (en) * 2010-01-22 2015-12-08 Perceptive Pixel, Inc. Sensing displays utilizing light emitting diodes
DE102012019621A1 (en) * 2012-10-06 2014-04-10 Valeo Schalter Und Sensoren Gmbh Rain sensor, motor vehicle and method for detecting the intensity of a precipitate
US11837669B2 (en) 2013-03-15 2023-12-05 ActLight SA Photo detector systems and methods of operating same
US11114480B2 (en) * 2013-03-15 2021-09-07 ActLight SA Photodetector
EP2819326A1 (en) * 2013-06-24 2014-12-31 Alcatel Lucent Optical transceiver for use in low bitrate communication systems
US11113941B2 (en) 2015-02-27 2021-09-07 Carrier Corporation Ambient light sensor in a hazard detector and a method of using the same
CN107301835B (en) * 2016-04-13 2019-09-17 群创光电股份有限公司 Light emitting diode indicator
US11193923B2 (en) 2020-02-06 2021-12-07 Know Labs, Inc. Detection of an analyte using multiple elements that can transmit or receive
US11330997B2 (en) 2020-02-06 2022-05-17 Know Labs, Inc. Detection of an analyte using different combinations of detector elements that can transmit or receive
US11058331B1 (en) 2020-02-06 2021-07-13 Know Labs, Inc. Analyte sensor and system with multiple detector elements that can transmit or receive
US11832926B2 (en) 2020-02-20 2023-12-05 Know Labs, Inc. Non-invasive detection of an analyte and notification of results
US11033208B1 (en) 2021-02-05 2021-06-15 Know Labs, Inc. Fixed operation time frequency sweeps for an analyte sensor
US11234618B1 (en) 2021-03-15 2022-02-01 Know Labs, Inc. Analyte database established using analyte data from non-invasive analyte sensors
US11284820B1 (en) 2021-03-15 2022-03-29 Know Labs, Inc. Analyte database established using analyte data from a non-invasive analyte sensor
US11284819B1 (en) 2021-03-15 2022-03-29 Know Labs, Inc. Analyte database established using analyte data from non-invasive analyte sensors
US20230355140A1 (en) 2022-05-05 2023-11-09 Know Labs, Inc. High performance glucose sensor
US11802843B1 (en) 2022-07-15 2023-10-31 Know Labs, Inc. Systems and methods for analyte sensing with reduced signal inaccuracy
US11696698B1 (en) 2022-10-03 2023-07-11 Know Labs, Inc. Analyte sensors with position adjustable transmit and/or receive components
US11903701B1 (en) 2023-03-22 2024-02-20 Know Labs, Inc. Enhanced SPO2 measuring device

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JPS5514549B1 (en) * 1968-07-30 1980-04-17
GB1441261A (en) * 1972-03-28 1976-06-30 Emi Ltd Semiconductor avalanche photodiodes
CA1015051A (en) * 1973-02-26 1977-08-02 Kunio Itoh Double heterostructure laser
FR2252653B1 (en) * 1973-11-28 1976-10-01 Thomson Csf
JPS50159288A (en) * 1974-06-11 1975-12-23
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers
FR2311408A1 (en) * 1975-05-16 1976-12-10 Thomson Csf AVALANCHE PHOTODIODE
FR2319980A1 (en) * 1975-07-28 1977-02-25 Radiotechnique Compelec REVERSIBLE SEMICONDUCTOR OPTOELECTRONIC DEVICE
US4122407A (en) * 1976-04-06 1978-10-24 International Business Machines Corporation Heterostructure junction light emitting or responding or modulating devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2475803A1 (en) * 1980-02-07 1981-08-14 Zaidan Hojin Handotai Kenkyu HETERO-JUNCTION LIGHT EMITTING DIODE
DE3346342A1 (en) * 1982-12-28 1986-06-12 Thomson-Csf, Paris OPTICAL COUPLING DEVICE WITH SWIVEL COUPLING

Also Published As

Publication number Publication date
GB2000373B (en) 1982-04-07
DE2828195C2 (en) 1985-10-10
JPS5754952B2 (en) 1982-11-20
DE2828195A1 (en) 1979-01-04
GB2000373A (en) 1979-01-04
FR2396419B1 (en) 1982-02-05
US4202000A (en) 1980-05-06
JPS5411691A (en) 1979-01-27
CA1106483A (en) 1981-08-04

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Legal Events

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ST Notification of lapse