EP3760450B1 - Security element for a valuable document - Google Patents

Description

The invention relates to a security element for a document of value, a security paper and the like according to the preamble of claim 1.

Areas that can be recognized as characters or patterns are usually left out when the layers are applied. With the known security elements, due to the manufacturing process, no color-shifting effect is noticeable in the areas of the recesses. In principle, the recesses are relatively easy to imitate and, taken in themselves, provide only limited protection against counterfeiting, which is particularly true when the recesses have simple geometric outline shapes. Security elements of the type mentioned at the beginning are from the DE 10 2004 049 118 A1 as well as the WO 2004/097112 A1 known.

It is an object of the invention to increase the anti-counterfeit security of security elements with color-shifting thin-film elements which have partial recesses.

This object is achieved according to the invention with a security element of the type mentioned at the outset by the features of the characterizing part of claim 1.

The solution according to the invention creates an additional, measurable color shift effect in areas of the recesses, which is not superficially visible to a user and, as a hidden security feature, contributes significantly to increasing security against forgery.

According to an advantageous variant of the invention, the at least one recess is designed as a letter, number, character, symbol or part of an image or pattern.

A variant has proven to be particularly advantageous in which the at least one recess in the reflector layer is free of material from the at least one spacer layer or is at least partially filled, in particular completely filled, by at least a portion of the at least one spacer layer.

It is also advantageous if the at least one spacer layer extends uninterruptedly, at least over the entire length and width of the thin-film element.

Furthermore, it is advantageous if the at least one absorber layer of the thin-film element completely covers the at least one recess in the reflector layer in a top view of the security element.

Advantageously, the first recesses and the second recesses overlap each other at least in sections, preferably completely, in a plan view of the security element.

In a further development of the invention, the at least one first absorber layer is uninterrupted and extends over the entire length and width of the thin-film element.

It has proven to be particularly favorable that the at least one first absorber layer has a transmittance that is between 0.1 and 0.99, in particular between 0.5 and 0.99, particularly preferably between 0.7 and 0.99.

According to a variant of the invention, the at least one reflector layer can be at least one metallic material, in particular selected from the group of aluminum, silver, copper, gold, platinum, niobium, tin, or nickel, titanium, vanadium, chromium, cobalt and palladium or alloys thereof Materials, in particular cobalt-nickel alloys, or at least one high-index dielectric material with a refractive index of greater than 1.65, in particular selected from the group of zinc sulfide (ZnS), zinc oxide (ZnO), titanium dioxide (TiO ₂ ), carbon (C ), indium oxide (In ₂ O ₃ ), indium tin oxide (ITO), tantalum pentoxide (Ta ₂ O ₅ ), cerium oxide (CeO ₂ ), yttrium oxide (Y ₂ O ₃ ), europium oxide (Eu ₂ O ₃ ), iron oxides such as (II)iron(III) oxide (Fe ₃ O ₄ ) and iron oxide (Fe ₂ O ₃ ), hafnium nitride (HfN), hafnium carbide (HfC), hafnium oxide (HfO ₂ ), lanthanum oxide (La ₂ O ₃ ), Magnesium oxide (MgO), neodymium oxide (Nd ₂ O ₃ ), praseodymium oxide (Pr ₆ O ₁₁ ), samarium oxide (Sm ₂ O ₃ ), antimony trioxide (Sb ₂ O ₃ ), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), Silicon monoxide (SiO), selenium trioxide (Se ₂ O ₃ ), tin oxide (SnO ₂ ), tungsten trioxide (WO ₃ ), high-index organic monomers and/or high-index organic polymers or be made from at least one of these materials.

In one embodiment of the invention, the at least one absorber layer can be at least one metallic material, in particular selected from the group of nickel, titanium, vanadium, cobalt, palladium, iron, tungsten, molybdenum, niobium, chromium, aluminum, also silver, copper or alloys of these materials include and/or be made from at least one of these materials.

According to an advantageous development of the invention, the at least one spacer layer can contain at least one high-refractive index dielectric material with a refractive index greater than or equal to 1.65, in particular selected from the group of zinc sulfide (ZnS), zinc oxide (ZnO), titanium dioxide (TiO ₂ ), carbon (C ), indium oxide (In ₂ O ₃ ), indium tin oxide (ITO), tantalum pentoxide (Ta ₂ O ₅ ), cerium oxide (CeO ₂ ), yttrium oxide (Y ₂ O ₃ ), europium oxide (Eu ₂ O ₃ ), iron oxides such as (II)iron(III) oxide (Fe ₃ O ₄ ) and iron oxide (Fe ₂ O ₃ ), hafnium nitride (HfN), hafnium carbide (HfC), hafnium oxide (HfO ₂ ), lanthanum oxide (La ₂ O ₃ ), Magnesium oxide (MgO), neodymium oxide (Nd2O3), praseodymium oxide (Pr ₆ O ₁₁ ), samarium oxide (Sm ₂ O ₃ ), antimony trioxide (Sb ₂ O ₃ ), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), silicon monoxide (SiO ), selenium trioxide (Se ₂ O ₃ ), tin oxide (SnO ₂ ), tungsten trioxide (WO ₃ ), high-refractive index organic monomers and/or high-refractive index organic polymers or at least one low-refractive index dielectric material with a refractive index less than 1.65, in particular selected from Group silicon oxide (SIOx), silicon dioxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), metal fluorides, for example magnesium fluoride (MgF ₂ ), aluminum fluoride (AlF ₃ ), cerium fluoride (CeF ₃ ), sodium aluminum fluorides (e.g. Na ₃ AlF ₆ or Na ₅ Al ₃ F ₁₄ ), neodymium fluoride (NdF ₃ ), lanthanum fluoride (LaF ₃ ), samarium fluoride (SmF ₃ ), barium fluoride (BaF ₂ ), calcium fluoride (CaF ₂ ), lithium fluoride (LiF), depressing organic monomers and/ or break-down organic polymers or be made from at least one of these materials.

According to a preferred variant of the invention, it can be provided that on a side of the reflector layer facing away from the spacer layer there is at least one additional one Layer made of the same material as the spacer layer is arranged, the reflector layer being embedded, in particular completely embedded, between the additional layer and the spacer layer.

An advantageous embodiment of the invention provides that the security element has at least one carrier layer made of plastic, in particular made of a translucent plastic, which carries the at least one thin-film element, the carrier layer preferably having at least one of the materials from the group polyimide (PI), polypropylene (PP) , monoaxially oriented polypropylene (MOPP), biaxially oriented polypropylene (BOPP), polyethylene (PE), polyphenylene sulfide (PPS), polyetheretherketone, (PEEK) polyetherketone (PEK), polyethyleneimide (PEI), polysulfone (PSU), polyaryletherketone (PAEK), Polyethylene naphthalate (PEN), liquid crystalline polymers (LCP), polyester, polybutylene terephthalate (PBT), polyethylene terephthalate (PET), polyamide (PA), polycarbonate (PC), cycloolefin copolymers (COC), polyoxymethylene (POM), acrylonitrile butadiene styrene (ABS ), polyvinyl cholride (PVC), ethylene tetrafluoroethylene (ETFE), polytetrafluoroethylene (PTFE), polyvinyl fluoride (PVF), polyvinylidene fluoride (PVDF) and ethylene-tetrafluoroethylene-hexafluoropropylene fluoroterpolymer (EFEP) and/or mixtures and/or co-polymers of these materials or is made from at least one of these materials.

For a better understanding of the invention, it will be explained in more detail using the following figures.

Fig. 1

Eine erste Variante eines Sicherheitselements;

Fig. 2

Ein erfindungsgemäßes Sicherheitselement.

They show in a highly simplified, schematic representation:

Fig. 1

A first variant of a security element;

Fig. 2

A security element according to the invention.

As an introduction, it should be noted that in the differently described embodiments, the same parts are provided with the same reference numbers or the same component names, with the disclosures contained in the entire description being transferred analogously to the same parts with the same reference numbers or the same component names can. The position information selected in the description, such as top, bottom, side, etc., is also related to the figure directly described and shown and, in the event of a change in position, these position information must be transferred accordingly to the new position.

All information on value ranges in this description should be understood to include any and all sub-ranges, e.g. the information 1 to 10 should be understood to include all sub-ranges, starting from the lower limit 1 and the upper limit 10 , i.e. all subranges start with a lower limit of 1 or greater and end with an upper limit of 10 or less, e.g. 1 to 1.7, or 3.2 to 8.1, or 5.5 to 10.

Fig.1 shows a security element 1. This security element serves as anti-counterfeit protection for a document of value, a security paper, value cards, such as credit cards, and the like. The security element can be applied to the object to be secured or embedded in it. The security element is particularly suitable for attachment in a “window area” of the object, for example in a window area of a banknote. In this document, a window is understood to be a transparent area of the object. At this point, however, it should be noted that the security element is not limited to use in a window area, but can generally be attached to any surface area of a valuable document, security paper, a prepaid card and the like. The security element 1 can have a carrier layer 2 made of plastic. The carrier layer 2 can be made of a translucent plastic. Materials that can be used, for example, are plastics such as transparent carrier films, preferably flexible plastic films, for example made of polyimide (PI), polypropylene (PP), monoaxially oriented polypropylene (MOPP), biaxially oriented polypropylene (BOPP), polyethylene (PE), polyphenylene sulfide (PPS), polyetheretherketone (PEEK) polyether ketone (PEK), polyethyleneimide (PEI), polysulfone (PSU), polyaryl ether ketone (PAEK), polyethylene naphthalate (PEN), liquid crystalline polymers (LCP), polyester, polybutylene terephthalate (PBT), polyethylene terephthalate (PET), polyamide (PA) , polycarbonate (PC), cycloolefin copolymers (COC), polyoxymethylene (POM), acrylonitrile butadiene styrene (ABS), polyvinyl chloride (PVC) ethylenetetrafluoroethylene (ETFE), polytetrafluoroethylene (PTFE), polyvinyl fluoride (PVF), polyvinylidene fluoride (PVDF) and ethylene -Tetrafluoroethylene-hexafluoropropylene fluoroterpolymer (EFEP), mixtures or co-polymers of these materials for come into use. It is preferred that the translucent substrate 14 be composed substantially of a transparent material such as polycarbonate. The carrier layer preferably has a thickness of approximately 5 μm to approximately 1000 μm, particularly preferably a thickness of 10 μm - 50 μm.

A color-shifting thin-film element 3 can be applied to the carrier layer 2. The thin-film element 3 has an absorber layer 4 and a reflector layer 5. A spacer layer 6 is arranged between the absorber layer 4 and the reflector layer 5. The reflector layer 5 has one or more recesses 7, which can be designed, for example, as letters, numbers, characters, symbols or as part of an image or pattern. At this point it should be noted that each of the above-mentioned layers can have either a single or multi-layer structure.

The spacer layer 6 covers the entire surface of the absorber layer 4 and the reflector layer 5 on mutually facing sides of these layers. The recesses 7 in the reflector layer 5 are also covered by the spacer layer 6. The recess 7 in the reflector layer can also be partially filled or completely filled by partial areas of the spacer layer 6.

The spacer layer 6 can extend over the entire length and width of the thin-film element 3 without interruptions in the layer.

In areas of the recesses 7, a color-shifting element 3a consisting of the absorber layer 4 and the spacer layer 6 is formed. The color-shifting element 3a formed from the spacer layer 6 and the absorber layer 4 generates a second color-shifting effect in the areas of the recesses 7 in addition to a first color-shifting effect caused by the absorber layer 4, the spacer layer 6 and the full-surface, uninterrupted areas of the reflector layer 5. The first color shift effect can be seen with the naked eye, while the second color shift effect is significantly weaker due to the absence of the reflector layer 5 and can at least be detected mechanically.

How out Fig. 1 The absorber layer 4 of the thin-film element 3 can be seen, the recesses 7 in or in the reflector layer 5 in a top view of the security element 1 completely cover. In other words, the absorber layer 4 can completely cover the recesses 7 when viewed from the direction of the carrier layer 2, with the recesses 7 lying behind the absorber layer 4 when viewed from the direction of the carrier layer 2.

The absorber layer 4 is preferably made of a metal, for example nickel, titanium, vanadium, cobalt, palladium, iron, tungsten, molybdenum, niobium, chromium, aluminum, copper or silver or alloys of these materials.

The absorber layer 4 can, for example, have a transmission coefficient that is between 0.1 and 0.99, in particular between 0.5 and 0.99, particularly preferably between 0.7 and 0.99.

The spacer layer is usually made of a dielectric material. According to a variant of the invention, the spacer layer can be made from a material with a low refractive index, for example a refractive index less than or equal to 1.65. Suitable materials with a low refractive index are, for example, silicon oxide ( _SIOx ), silicon dioxide ( _SiO2 ), aluminum oxide ( _{Al2O3 )} , metal fluorides, for example magnesium fluoride ( _MgF2 ), aluminum fluoride ( _AlF3 ), cerium fluoride ( _CeF3 ), sodium -Aluminum fluorides (e.g. Na ₃ AlF ₆ or Na ₅ Al ₃ F ₁₄ ), neodymium fluoride (NdF ₃ ), lanthanum fluoride (LaF ₃ ), samarium fluoride (SmF ₃ ), barium fluoride (BaF ₂ ), calcium fluoride (CaF ₂ ), lithium fluoride ( LiF), or combinations of these materials.

According to a variant of the invention, the spacer layer can also be made from a material with a high refractive index, for example a refractive index greater than 1.65. Suitable materials with a high refractive index are, for example, zinc sulfide (ZnS), zinc oxide (ZnO), titanium dioxide (TiO ₂ ), carbon (C), indium oxide (In ₂ O ₃ ), indium tin oxide (ITO), tantalum pentoxide (Ta ₂ O ₅ ), cerium oxide (CeO ₂ ), yttrium oxide (Y ₂ O ₃ ), europium oxide (Eu ₂ O ₃ ), iron oxides such as (II)iron (III) oxide (Fe ₃ O ₄ ) and iron oxide (Fe ₂ O ₃ ), hafnium nitride (HfN), hafnium carbide (HfC), hafnium oxide (HfO ₂ ), lanthanum oxide (La ₂ O ₃ ), magnesium oxide (MgO), neodymium oxide (Nd ₂ O ₃ ), praseodymium oxide (Pr ₆ O ₁₁ ), samarium oxide ( Sm ₂ O ₃ ), antimony trioxide (Sb ₂ O ₃ ), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), silicon monoxide (SiO), selenium trioxide (Se ₂ O ₃ ), tin oxide (SnO ₂ ), tungsten trioxide (WO ₃ ), or combinations of these materials. The layer thickness of the spacer layer 6 is preferably 50 nm - 800 nm, in particular between 100 nm - 700 nm, particularly preferably 150 - 600 nm. Depending on the desired color shift, the spacer layer 6 can have an optical thickness in Quarter Wave Optical Thinkness (QWOT) of approximately 2 QWOT at a wavelength of 400 nm to approximately 9 QWOT at a wavelength of approximately 700 nm, preferably the spacer layer 6 at 400 - 700 nm has an optical thickness of 2 - 6 QWOT. The values given are not just areas of fluctuation, but the thickness of the layer 6 varies depending on the color shift effect to be achieved in each case.

The reflector layer 5 can be made, for example, from metals such as aluminum, silver, copper, gold, platinum, niobium, tin, or from nickel, titanium, chromium, vanadium, cobalt and palladium or cobalt-nickel alloys. As an alternative to being made from metals, the reflection layer can also consist of a high-refractive index dielectric layer with a refractive index of greater than 1.65, in particular selected from the group consisting of zinc sulfide (ZnS), zinc oxide (ZnO), titanium dioxide (TiO ₂ ), carbon (C). , indium oxide (In ₂ O ₃ ), indium tin oxide (ITO), tantalum pentoxide (Ta ₂ O ₅ ), cerium oxide (CeO ₂ ), yttrium oxide (Y ₂ O ₃ ), europium oxide (Eu ₂ O ₃ ), iron oxides such as for example (II)iron(III) oxide (Fe ₃ O ₄ ) and iron oxide (Fe ₂ O ₃ ), hafnium nitride (HfN), hafnium carbide (HfC), hafnium oxide (HfO ₂ ), lanthanum oxide (La ₂ O ₃ ), magnesium oxide (MgO), neodymium oxide (Nd ₂ O ₃ ), praseodymium oxide (Pr ₆ O ₁₁ ), samarium oxide (Sm ₂ O ₃ ), antimony trioxide (Sb ₂ O ₃ ), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ), silicon monoxide (SiO), selenium trioxide (Se ₂ O ₃ ), tin oxide (SnO ₂ ), tungsten trioxide (WO ₃ ), high-index organic monomers and/or high-index organic polymers or be made from at least one of these materials.

When using metals, an optical density (OD) of the reflector layer 5 is preferably between 1 and 3, preferably between 1.5 and 2.5%. When using high-index dielectric materials, the reflector layer 5 can be quasi-transparent.

This would result in a layer structure in which the spacer layer 6 is made of a dielectric material with a low refractive index and the reflection layer is made of a dielectric material with a high refractive index.

The above-mentioned materials and properties, such as layer thicknesses, of the individual layers apply to all exemplary embodiments in this document.

According to Fig. 2 The absorber layer of the thin-film element 11 of the security element 10 according to the invention has at least a first absorber layer 4, which completely covers the recesses 7 of the reflector layer 5 in a plan view of the security element 10, and a second absorber layer 8, which is applied to the first absorber layer 4. The second absorber layer 8 can be partially applied to the first absorber layer 4 and has first recesses 12, with the reflector layer 5 having second recesses 7. The second absorber layer 8 lies between the reflector layer 5 and the first absorber layer 4. The spacer layer 6 is arranged between the reflector layer 5 and the first absorber layer 4 and between the reflector layer 5 and the second absorber layer 8.

The second absorber layer 8 preferably has an optical density (OD) of 0.1 - 0.9, in particular 0.3 - 0.4, and can be made from the same materials as the first absorber layer 4.

The first recesses 12 and the second recesses 7 can overlap one another in sections in a top view of the security element 1. The first recesses 12 and the second recesses 7 preferably overlap completely. In addition, the first recesses 12 and the second recesses 7 can be designed to be congruent with one another.

How out Fig. 2 It can also be seen that at least one further layer 9 made of the same material as the spacer layer 6 can be arranged on a side of the reflector layer 5 facing away from the spacer layer 6. After the layer 9 has been applied, it borders directly on the spacer layer 6 in areas of the recesses 12 or merges into it. The reflector layer 5 can be embedded, in particular completely embedded, between the further layer 9 and the spacer layer 6. The layer 9 preferably has a layer thickness between 100 nm - 400 nm, in particular between 150 nm - 300 nm, particularly preferably 160 - 200.

To produce the security element 10, after coating the carrier layer 2 with the first absorber layer 4, washing paint can be applied in the areas in which the second absorber layer 8 should have the recesses 12. The second absorber layer 8 can then be applied and the washing color can be removed, leaving the recesses 12 as demetallized areas. A coating with the spacer layer 6 can then take place. Washing paint can in turn be applied to the spacer layer 6 in areas in which the reflector layer 5 should have the recesses 7. After coating the spacer layer 6 with the reflector layer 5, the washing color can be removed, so that the recesses 7 remain as demetallized areas. The layer 9 can then be applied to the reflector layer, whereby the recesses 7 in the reflector layer 5 are completely or partially filled with the material of the layer 9. Alternatively, the recesses 7 in the reflector layer 5 can also be left unfilled so that no material is present in the recesses.

Alternatively, the first absorber layer 4 and the second absorber layer 8 can be designed as a single absorber layer with varying layer thickness, onto which the spacer layer 6 and optionally washing ink as well as the reflector layer 5 are applied in the course of production. Furthermore, it should be noted that the spacer layer 6 and the layer 9 can also form a single continuous layer.

The individual layers can be applied to one another in a manner known per se, for example using physical vapor deposition (PVD) processes, sputtering or printing processes. As an alternative to using washing colors to create demetallized areas (recesses 7 and 12), the absorber layer 8 and the reflector layer 5 can only be partially applied or produced using etching processes.

The security element 1 can be produced analogously to the method described above.

For the sake of order, it should finally be pointed out that in order to better understand the structure, elements have sometimes been shown out of scale and/or enlarged and/or reduced in size.

List of reference symbols

1

Security element

2

Backing layer

3

Thin film element

3a

Color shifting element

4

absorber layer

5

reflector layer

6

Distance layer

7

recess

8th

absorber layer

9

layer

10

Security element

11

Thin film element

12

recess

Claims (13)

1. A security element (1, 10) for a security document, a security paper and the like, wherein the security element (1, 10) has at least one color-shifting thin-layer element (3, 11) with at least one absorber layer (4, 8), at least one reflector layer (5) and at least one spacer layer (6) arranged between the absorber layer (4, 8) and the reflector layer (5), wherein the at least one reflector layer (5) has at least one recess (7), wherein the at least one spacer layer (6) fully covers the at least one absorber layer (4, 8) and the reflector layer (5) on mutually facing sides, wherein the spacer layer (6) also fully covers the at least one recess (7) in the at least one reflector layer (5), wherein a color shifting element (3a) consisting at least of the at least one absorber layer (4) and the at least one spacer layer (6) is formed in a region of the at least one recess (7), characterized in that the at least one absorber layer (4, 8) of the thin-layer element (11) has at least one first absorber layer (4), which completely covers the at least one recess (7) of the reflector layer (5) in a plan view of the security element (1, 10), and at least one second absorber layer (8), wherein the at least one second absorber layer has first recesses (12) and the at least one reflector layer has second recesses (7), wherein the at least one second absorber layer (8) is arranged between the at least one reflector layer and the at least one first absorber layer (4) and the at least one spacer layer (6) is arranged between the at least one reflector layer (5) and the at least one first absorber layer (4) and between the at least one reflector layer (5) and the at least one second absorber layer (8).
2. The security element according to claim 1, characterized in that the at least one recess (7) is configured as a letter, number, sign, symbol or part of an image or pattern.
3. The security element according to claim 1 or 2, characterized in that the at least one recess (7) in the reflector layer (5) is free of material of the at least one spacer layer (6) or is at least partially filled, in particular completely filled, by at least a partial area of the at least one spacer layer (6).
4. The security element according to one of claims 1 to 3, characterized in that the at least one spacer layer (6) extends uninterruptedly, at least over the entire length and width of the thin-layer element (3).
5. The security element according to one of claims 1 to 4, characterized in that the at least one absorber layer (4) of the thin-layer element (3) completely covers the at least one recess (7) of the reflector layer in a plan view of the security element (1).
6. The security element according to claim 5, characterized in that the first recesses (12) and the second recesses (7) overlap each other at least in sections, preferably completely overlap, in a plan view of the security element (1).
7. The security element according to one of claims 1 to 6, characterized in that the absorber layer or the at least one first absorber layer (4) is uninterrupted and extends over the entire length and width of the thin-layer element (3, 11).
8. The security element according to one of claims 1 to 7, characterized in that the at least one first absorber layer (4) has a transmission coefficient which is between 0.1 and 0.99, in particular between 0.5 and 0.99, particularly preferably between 0.7 and 0.99.
9. The security element according to one of claims 1 to 8, characterized in that the at least one reflector layer comprises at least one metallic material, in particular selected from the group of aluminum, silver, copper, gold, platinum, niobium, tin, or of nickel, titanium, vanadium, chromium, cobalt and palladium, or alloys of these materials, in particular cobalt-nickel alloys, or of at least one high refractive index dielectric material having a refractive index of larger than 1.65, in particular selected from the group of zinc sulfide (ZnS), zinc oxide (ZnO), titanium dioxide (TiO₂), carbon (C), indium oxide (In₂O₃), indium tin oxide (ITO), tantalum pentoxide (Ta₂O₅), cerium oxide (CeO₂), yttrium oxide (Y₂O₃), europium oxide (Eu₂O₃), iron oxides such as (II) iron (III) oxide (Fe₃O₄) and iron oxide (Fe₂O₃), hafnium nitride (HfN), hafnium carbide (HfC), hafnium oxide (HfO₂), lanthanum oxide (La₂O₃), magnesium oxide (MgO), neodymium oxide (Nd₂O₃), praseodymium oxide (Pr₆O₁₁), samarium oxide (Sm₂O₃), antimony trioxide (Sb₂O₃), silicon carbide (SiC), silicon nitride (Si₃N₄), silicon monoxide (SiO), selenium trioxide (Se₂O₃), tin oxide (SnO₂), tungsten trioxide (WO₃), high refractive index organic monomers and/or high refractive index organic polymers, or is made of at least one of these materials.
10. The security element according to one of claims 1 to 9, characterized in that the at least one absorber layer (4, 8) comprises at least one metallic material, in particular selected from the group of nickel, titanium, vanadium, chromium, cobalt, palladium, iron, tungsten, molybdenum, niobium, aluminum, silver, copper and/or alloys of these materials or is made of at least one of these materials.
11. The security element according to one of claims 1 to 10, characterized in that the at least one spacer layer comprises at least one low refractive index dielectric material having a refractive index of less than or equal to 1.65, in particular selected from the group of silicon oxide (SIO_x), silicon dioxide (SiO₂), aluminum oxide (Al₂O₃), metal fluorides, for example magnesium fluoride (MgF₂), aluminum fluoride (AlF₃), cerium fluoride (CeF₃), sodium aluminum fluorides (e.g. Na₃AlF₆ or Na₅Al₃F₁₄), neodymium fluoride (NdF₃), lanthanum fluoride (LaF₃), samarium fluoride (SmF₃) barium fluoride (BaF₂), calcium fluoride (CaF₂), lithium fluoride (LiF), low refractive index organic monomers and/or low refractive index organic polymers, or at least one high refractive index dielectric material having a refractive index of greater than 1.65, in particular selected from the group of zinc sulfide (ZnS), zinc oxide (ZnO), titanium dioxide (TiO₂), carbon (C), indium oxide (In₂O₃), indium tin oxide (ITO), tantalum pentoxide (Ta₂O₅), cerium oxide (CeO₂), yttrium oxide (Y₂O₃), europium oxide (Eu₂O₃), iron oxides such as (II) iron (III) oxide (Fe₃O₄) and iron oxide (Fe₂O₃), hafnium nitride (HfN), hafnium carbide (HfC), hafnium oxide (HfO₂), lanthanum oxide (La₂O₃), magnesium oxide (MgO), neodymium oxide (Nd₂O₃), praseodymium oxide (Pr₆O₁₁), samarium oxide (Sm₂O₃), antimony trioxide (Sb₂O₃), silicon carbide (SiC), silicon nitride (Si₃N₄), silicon monoxide (SiO), selenium trioxide (Se₂O₃), tin oxide (SnO₂), tungsten trioxide (WO₃), high refractive index organic monomers and/or high refractive index organic polymers, or is made of at least one of these materials.
12. The security element according to one of claims 1 to 11, characterized in that at least one additional layer (9) made of the same material as the spacer layer (6) is arranged on a side of the reflector layer (5) facing away from the spacer layer (6), wherein the reflector layer (5) is embedded, in particular completely embedded, between the additional layer (9) and the spacer layer (6).
13. The security element according to one of claims 1 to 12, characterized in that it has at least one carrier layer made of plastic material, in particular of a translucent plastic material, which carries the at least one thin-layer element, wherein the carrier layer preferably comprises at least one of the materials from the group of polyimide (PI), polypropylene (PP), monoaxially oriented polypropylene (MOPP), biaxially oriented polypropylene (BOPP), polyethylene (PE), polyphenylene sulfide (PPS), polyetheretherketone, (PEEK) polyetherketone (PEK), polyethylene imide (PEI), polysulfone (PSU), polyaryletherketone (PAEK), polyethylene naphthalate (PEN), liquid crystalline polymers (LCP), polyester, polybutylene terephthalate (PBT), polyethylene terephthalate (PET), polyamide (PA), polycarbonate (PC), cycloolefin copolymers (COC), polyoxymethylene (POM), acrylonitrile-butadiene-styrene (ABS), polyvinylcholride (PVC) ethylene tetrafluoroethylene (ETFE), polytetrafluoroethylene (PTFE), polyvinyl fluoride (PVF),polyvinylidene fluoride (PVDF), and ethylene-tetrafluoroethylene-hexafluoropropylene-fluoropolymer (EFEP) and/or mixtures and/or copolymers of these materials or is made of at least one of these materials.

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