EP3634922A1 - Method for producing layers of silicon carbide - Google Patents
Method for producing layers of silicon carbideInfo
- Publication number
- EP3634922A1 EP3634922A1 EP18730683.2A EP18730683A EP3634922A1 EP 3634922 A1 EP3634922 A1 EP 3634922A1 EP 18730683 A EP18730683 A EP 18730683A EP 3634922 A1 EP3634922 A1 EP 3634922A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- silicon
- carbon
- dispersion
- silicon carbide
- containing solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 169
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 156
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000006185 dispersion Substances 0.000 claims abstract description 80
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 111
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 claims description 65
- 239000002243 precursor Substances 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 62
- 239000000203 mixture Substances 0.000 claims description 58
- 150000001875 compounds Chemical class 0.000 claims description 38
- 230000008569 process Effects 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 20
- 239000003153 chemical reaction reagent Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000002210 silicon-based material Substances 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 16
- 239000002904 solvent Substances 0.000 claims description 16
- 239000002270 dispersing agent Substances 0.000 claims description 14
- 238000007669 thermal treatment Methods 0.000 claims description 14
- -1 invert sugar Chemical compound 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000003960 organic solvent Substances 0.000 claims description 8
- 150000004756 silanes Chemical class 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 235000000346 sugar Nutrition 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 238000007598 dipping method Methods 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 150000008163 sugars Chemical class 0.000 claims description 6
- 229920000881 Modified starch Polymers 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 235000019426 modified starch Nutrition 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 4
- 238000005096 rolling process Methods 0.000 claims description 4
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- OWEGMIWEEQEYGQ-UHFFFAOYSA-N 100676-05-9 Natural products OC1C(O)C(O)C(CO)OC1OCC1C(O)C(O)C(O)C(OC2C(OC(O)C(O)C2O)CO)O1 OWEGMIWEEQEYGQ-UHFFFAOYSA-N 0.000 claims description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
- 229930091371 Fructose Natural products 0.000 claims description 3
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 claims description 3
- 239000005715 Fructose Substances 0.000 claims description 3
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 3
- GUBGYTABKSRVRQ-PICCSMPSSA-N Maltose Natural products O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-PICCSMPSSA-N 0.000 claims description 3
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 claims description 3
- 229930006000 Sucrose Natural products 0.000 claims description 3
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000008103 glucose Substances 0.000 claims description 3
- 229960004903 invert sugar Drugs 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 239000005720 sucrose Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 238000003618 dip coating Methods 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 108010009736 Protein Hydrolysates Proteins 0.000 claims 1
- KVBYPTUGEKVEIJ-UHFFFAOYSA-N benzene-1,3-diol;formaldehyde Chemical compound O=C.OC1=CC=CC(O)=C1 KVBYPTUGEKVEIJ-UHFFFAOYSA-N 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 26
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 16
- 239000004065 semiconductor Substances 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 12
- 239000012298 atmosphere Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000007062 hydrolysis Effects 0.000 description 4
- 238000006460 hydrolysis reaction Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000000197 pyrolysis Methods 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910000000 metal hydroxide Inorganic materials 0.000 description 3
- 150000004692 metal hydroxides Chemical class 0.000 description 3
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- DGXAGETVRDOQFP-UHFFFAOYSA-N 2,6-dihydroxybenzaldehyde Chemical compound OC1=CC=CC(O)=C1C=O DGXAGETVRDOQFP-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000012876 carrier material Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 150000004679 hydroxides Chemical class 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 229910021426 porous silicon Inorganic materials 0.000 description 2
- 125000005624 silicic acid group Chemical class 0.000 description 2
- 239000008107 starch Substances 0.000 description 2
- 235000019698 starch Nutrition 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- IKWTVSLWAPBBKU-UHFFFAOYSA-N a1010_sial Chemical compound O=[As]O[As]=O IKWTVSLWAPBBKU-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910001963 alkali metal nitrate Inorganic materials 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical class Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- FAPDDOBMIUGHIN-UHFFFAOYSA-K antimony trichloride Chemical compound Cl[Sb](Cl)Cl FAPDDOBMIUGHIN-UHFFFAOYSA-K 0.000 description 1
- 229910000413 arsenic oxide Inorganic materials 0.000 description 1
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical group Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 description 1
- 229960002594 arsenic trioxide Drugs 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 150000004675 formic acid derivatives Chemical class 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 150000004820 halides Chemical group 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910001853 inorganic hydroxide Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000012048 reactive intermediate Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000003797 solvolysis reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- NKLYMYLJOXIVFB-UHFFFAOYSA-N triethoxymethylsilane Chemical compound CCOC([SiH3])(OCC)OCC NKLYMYLJOXIVFB-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5057—Carbides
- C04B41/5059—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/624—Sol-gel processing
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/0072—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
- C04B41/4535—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application applied as a solution, emulsion, dispersion or suspension
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/4505—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements characterised by the method of application
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
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- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00241—Physical properties of the materials not provided for elsewhere in C04B2111/00
- C04B2111/0025—Compositions or ingredients of the compositions characterised by the crystal structure
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- C04B2111/00241—Physical properties of the materials not provided for elsewhere in C04B2111/00
- C04B2111/00405—Materials with a gradually increasing or decreasing concentration of ingredients or property from one layer to another
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- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
Definitions
- Silicon carbide with the formula SiC is an extremely interesting and versatile material that can be used in semiconductor technology and for the position of ceramic materials. Due to the high hardness and the high melting point, silicon carbide is also called carborundum and is often used as an abrasive or as an insulator in high-temperature reactors. In addition, silicon carbide incorporates alloys or alloy-like compounds having a variety of elements and compounds which have a variety of advantageous material properties, such as, for example: As a high hardness, high resistance, low weight and a low sensitivity to oxidation, even at high temperatures.
- silicon carbide 25 is extremely resistant mechanically and thermally, and the electronic properties can be tailored by suitable doping for the particular application. While pure silicon carbide is an insulator, but due to the good thermal conductivity is suitable as a substrate for semiconductor structures, by suitable doping, in particular with the elements boron, aluminum, nitrogen and phosphorus excellent semiconductor materials can be provided which at temperatures of up to about 500 ° C can be used.
- a further object of the present invention is to provide suitable substances, in particular precursors, which can be reproducibly converted to silicon carbide monocrystals rapidly and on an industrial scale. It is further an object of the present invention to provide a method and suitable starting materials which make it possible to produce layers of silicon carbide on non-crystalline substrates, in particular non-monocrystalline substrates.
- the present invention according to a first aspect of the present invention is a process for producing silicon carbide thin films according to claim 1; Further, advantageous embodiments of this invention aspect are the subject of the relevant subclaims.
- Another object of the present invention according to a second aspect of the present invention is a composition according to claim 16; Further, advantageous embodiments of this invention aspect are the subject of the relevant subclaims. Finally, another object of the present invention is a silicon carbide layer according to claim 21. It goes without saying that the following, special embodiments, in particular special embodiments or the like, which are described only in connection with an aspect of the invention, also apply correspondingly in relation to the other aspects of the invention, without this requiring an explicit mention.
- the subject of the present invention - according to one aspect of the present invention - is thus a process for producing thin layers of silicon carbide, wherein
- a liquid carbon and silicon-containing solution or dispersion, in particular a SiC precursor sol, is applied to a substrate and
- the carbon- and silicon-containing solution or dispersion, in particular the SiC precursor sol is converted into silicon carbide.
- the Applicant has surprisingly found out, by using carbon- and silicon-containing solutions or dispersions, in particular of SiC precursor sols, thin layers of doped or undoped silicon carbide can be produced, which have an extremely low number of defects and are outstanding Are suitable for semiconductor applications.
- the method of the invention can produce thin layers of silicon carbide on almost all substrates, not just single-crystal substrates such as silicon carbide or silicon wafers.
- the method according to the invention enables the simple, cost-effective and reproducible production of thin layers of silicon carbide or silicon carbide bodies with a flat surface.
- a solution containing carbon and silicon is to be understood as meaning a solution or dispersion, in particular a precursor sol, which contains carbon- and silicon-containing chemical compounds, the individual compounds being carbon and / or May have silicon.
- the compounds which have carbon and silicon are preferably suitable as precursors for the target compounds to be prepared.
- a precursor is to be understood as meaning a chemical compound or a mixture of chemical compounds which react by chemical reaction and / or under the action of energy to one or more target compounds.
- a precursor sol is a solution or dispersion of precursor substances, in particular starting compounds, preferably precursors, which react to form the desired target compounds.
- the chemical compounds or mixtures of chemical compounds are no longer necessarily present in the form of the chemical compounds originally used, but instead, for example, as hydrolysis, condensation or other reaction or intermediate products.
- this is made clear in particular by the expression of the "sol".
- sol-gel processes inorganic materials are usually converted under hydro- or solvolysis into reactive intermediates or agglomerates and particles, the so-called sol, which then age in particular by condensation reactions to give a gel, larger particles and agglomerates in the Solution or dispersion arise.
- a SiC precursor sol is a sol, in particular a solution or dispersion, which contains chemical compounds or their reaction products from which silicon carbide can be obtained under process conditions.
- a solution is to be understood as meaning a usually liquid single-phase system in which at least one substance, in particular a compound or its components, such as ions, are homogeneously distributed in another substance, the so-called solvent.
- a dispersion is to be understood as meaning an at least two-phase system in which a first phase, namely the dispersed phase, is distributed in a second phase, the continuous phase.
- the continuous phase is also referred to as dispersion medium or dispersant;
- the continuous phase is usually in the form of a liquid, and dispersions in the context of the present invention are generally solid-in-liquid dispersions.
- the transition from a solution to a dispersion is often fluid and it is no longer possible to distinguish clearly between a solution and a dispersion.
- a layer is to be understood as the distribution of material, in particular in the form of a monocrystal, having a certain layer thickness in a plane, in particular on a surface of a substrate.
- the plane does not have to be completely covered with the material.
- at least one surface of the substrate is provided over its entire surface with the layer of silicon carbide or with a layer of the carbon- and silicon-containing solution or dispersion.
- a substrate is to be understood as meaning the material to which the carbon- and silicon-containing solution or dispersion, in particular the SiC precursor sol, is applied.
- a substrate in the context of the present invention is a three-dimensional or even a nearly two-dimensional structure having at least one preferably planar surface onto which the carbon- and silicon-containing solution or dispersion is applied.
- the substrate is thus preferably a carrier material for producing the layer of silicon carbide from the informal carbon- and silicon-containing solution.
- a doped silicon carbide is to be understood as meaning a silicon carbide which is admixed, in particular doped, with further elements, in particular from the 13th and 15th group of the Periodic Table of the Elements, in small amounts.
- the silicon carbide has at least one doping element in the parts per million (ppm) or parts per billion (ppb) range.
- the doping of the silicon carbides in particular has a decisive influence on the electrical properties of the silicon carbides, so that doped silicon carbides are particularly suitable for applications in semiconductor technology. Dopings with doping elements which have more than 4 valence electrons are referred to as n-type dopants, while dopants with doping elements having less than 4 valence electrons are referred to as p-type dopants.
- the silicon carbide is doped with an element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony, boron, aluminum, gallium, indium and mixtures thereof.
- the silicon carbide is doped with elements of the 13th and 15th group of the periodic table of the elements, whereby in particular the electrical properties of the silicon carbide are specifically manipulated and adjusted. could be made.
- Such doped silicon carbides are particularly suitable for applications in semiconductor technology.
- the doping reagent is selected from arsenic trichloride, antimony chloride, arsenic oxide or antimony oxide.
- aluminum can be used as doping, in particular in the case of acidic or basic pH.
- aluminum chlorides When using metals as doping element, it is generally possible to use the chlorides, nitrates, acetates, acetylacetonates, formates, alkoxides and hydroxides, with absorption of sparingly soluble hydroxides.
- the carbon- and silicon-containing solution or dispersion in particular the SiC precursor sol, is applied to the substrate as a layer, in particular as a homogeneous layer.
- the carbon- and silicon-containing solution or dispersion, in particular the SiC precursor sol in the form of a layer on the substrate, it is possible to obtain homogeneous monocrystalline layers of silicon carbide.
- the carbon- and silicon-containing solution or dispersion in particular the SiC precursor sol, contains
- the carbon- and silicon-containing solution or dispersion, in particular the SiC precursor sol to temperatures in the range of 800 to 1 .200 ° C, in particular 900 to 1 .100 ° C, preferably 950 to 1. 050 ° C, heated and
- the carbon- and silicon-containing solution or dispersion, in particular that glass obtained in process step (i), in the second process stage (ii) is heated, this can vary within wide ranges.
- the carbon- and silicon-containing solution or dispersion, in particular the SiC precursor sol, preferably the glass obtained in process step (i) for a period of more than 10 minutes, in particular over 15 minutes, preferably over 20 Minutes, preferably over 25 minutes, heated.
- the substrate may be removed after the thermal treatment, in particular following process step (b).
- the substrate is removed in the context of the present invention, it has proven useful if the substrate is removed by oxidation.
- the substrate is usually removed thermally or chemically, in particular by thermal or chemical oxidative removal.
- particularly good results are obtained if the substrate is removed in an oxygen atmosphere, by means of ozone and / or by the action of aqueous hydrogen peroxide solution.
- the substrate is burned, so to speak, which is particularly suitable for substrates based on graphite.
- the carbon- and silicon-containing solution or dispersion, in particular the SiC precursor sol is heated to temperatures of 1,800 ° C. or higher, and
- the substrate is removed in a third method step following the second method step (b).
- the thickness of the wafer over the layer thickness of the liquid carbon- and silicon-containing solution or dispersion, in particular of the SiC precursor sol is determined in this context.
- the process steps (a) and (b) are repeated until a wafer of the desired thickness is obtained. In this way, single crystal silicon carbide wafers of almost any thickness can be easily obtained.
- the method steps (a) and (b) are repeated, wherein in each passage different carbon- and silicon-containing solutions or dispersions, in particular the SiC precursor sols, preferably with different doping reagents and / or different concentrations of doping reagents, be used.
- different carbon- and silicon-containing solutions or dispersions, in particular the SiC precursor sols in the respective performance of process steps (a) and (b) semiconductor materials with layer-by-layer different electronic properties can be obtained, which can be used as base materials for electronic components , For example, layer sequences with pn doping for diodes and pnp or npn dopings can be used as base materials for bipolar transistors.
- Another object of the present invention - in accordance with an aspect of the present invention - is a composition, in particular a SiC precursor sol, in the form of a solution or dispersion
- the solvent or dispersant in the composition according to the invention can be selected from all suitable solvents or dispersants.
- the solvent or dispersing agent is selected from water and organic solvents and mixtures thereof.
- the starting compounds which are generally hydrolyzable or sovolyzable, are converted to inorganic hydroxides, in particular metal hydroxides and silicic acids, which subsequently condense, so that precursors suitable for pyrolysis and crystallization are obtained.
- the compounds used should moreover have sufficiently high solubilities in the solvent used, in particular in ethanol and / or water, in order to be able to form finely divided dispersions of the solutions, in particular sols, and must not be mixed with other constituents of the solution or dispersion during the preparation process. especially the sol, react to insoluble compounds.
- reaction rate of the individual reactions occurring must be coordinated, since the hydrolysis, condensation and optionally gelation of the composition according to the invention should, if possible, proceed undisturbed in order to obtain the most homogeneous possible distribution of the individual constituents in the sol.
- the formed reaction products must not be sensitive to oxidation and, moreover, should not be volatile.
- the organic solvent is selected from alcohols, in particular methanol, ethanol, 2-propanol, acetone, ethyl acetate and mixtures thereof.
- the organic solvent is selected from methanol, ethanol, 2-propanol and mixtures thereof, with ethanol in particular being preferred.
- the abovementioned organic solvents are miscible with water over a wide range and, in particular, are also suitable for dispersing or for dissolving polar inorganic substances, for example metal salts.
- mixtures of water and at least one organic solvent are preferably used as solvents or dispersants.
- the solvent or dispersing agent has a weight-related ratio of water to organic solvent of 1:10 to 20: 1, in particular 1: 5 to 15: 1, preferably 1: 2 to 10: 1, preferably 1 : 1 to 5: 1, more preferably 1: 3.
- the composition has a weight-related ratio of silicon to carbon, in particular in the form of the silicon-containing compound and the carbon-containing compound, in the range from 1: 1 to 1:10, in particular 1: 2 to 1: 7 , preferably 1: 3 to 1: 5, preferably 1: 3.5 to 1: 4.5.
- a weight-related ratio of silicon to carbon in particular in the form of the silicon-containing compound and the carbon-containing compound, in the range from 1: 1 to 1:10, in particular 1: 2 to 1: 7 , preferably 1: 3 to 1: 5, preferably 1: 3.5 to 1: 4.5.
- the composition has a silicon-to-carbon weight ratio, in particular of silicon-containing compound to carbonaceous compound, of 1: 4.
- the silicon-containing compound is selected from silanes, silane hydrolyzates, orthosilicic acid and mixtures thereof, in particular silanes.
- Orthosilicic acid As their condensation products can be obtained in the context of the present invention, for example, from alkali metal silicates whose alkali metal ions have been exchanged by ion exchange for protons.
- alkali metal compounds are as far as possible not used in the composition since they are also incorporated into the silicon carbide-containing compound.
- alkali metal doping is generally undesirable in the context of the present invention.
- suitable alkali metal salts for example, the silicon-containing compounds or alkali phosphates, may be used.
- R alkyl, in particular C 1 - to C 6 -alkyl, preferably C 1 to C 3 -alkyl, preferably C 1 - and / or C 2 -alkyl;
- n 1 - 4, preferably 3 or 4.
- R C 1 to C 3 alkyl, in particular C 1 and / or C 2 alkyl;
- n 3 or 4.
- the composition contains the silicon-containing compound, this may also vary widely depending on the particular conditions of use.
- the composition contains the silicon-containing compound in amounts of 1 to 80% by weight, in particular 2 to 70% by weight, preferably 5 to 60% by weight, preferably 10 to 60% by weight, based on the composition , on.
- the carbon-containing compound is selected from the group of sugars, in particular sucrose, glucose, fructose, invert sugar, maltose; Strength; Starch derivatives; organic polymers, in particular phenol-formaldehyde resin and resorcinol-formaldehyde resin, and mixtures thereof.
- the composition optionally has a doping reagent.
- the composition comprises a doping reagent
- the composition usually has the doping reagent in amounts of 0.000001 to 15% by weight, in particular 0.000001 to 10% by weight, preferably 0.000005 to 5% by weight, more preferably 0.00001 to 1 wt .-%, based on the solution or dispersion on.
- doping reagents can decisively change the properties of the resulting silicon carbide. If the silicon carbide is to be doped with nitrogen, then, for example, nitric acid, ammonium chloride or melamine can be used as doping reagents.
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Abstract
Description
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DE102017112756.9A DE102017112756A1 (en) | 2017-06-09 | 2017-06-09 | Method for producing layers of silicon carbide |
PCT/EP2018/064621 WO2018224438A1 (en) | 2017-06-09 | 2018-06-04 | Method for producing layers of silicon carbide |
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US (1) | US20200165171A1 (en) |
EP (1) | EP3634922A1 (en) |
JP (1) | JP2020523267A (en) |
CN (1) | CN110719900A (en) |
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WO (1) | WO2018224438A1 (en) |
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JP2022169811A (en) * | 2019-09-26 | 2022-11-10 | 国立大学法人 東京大学 | METHOD FOR GROWING SiC CRYSTALS |
KR102293576B1 (en) * | 2019-11-28 | 2021-08-26 | 한국과학기술연구원 | fabrication Method of high purity large size α-phase silicon carbide powder |
CN112210294B (en) * | 2020-09-22 | 2021-11-23 | 广东极客亮技术有限公司 | Silicon carbide mildew-proof termite-proof coating, termite-proof wood and preparation method thereof |
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US4028149A (en) | 1976-06-30 | 1977-06-07 | Ibm Corporation | Process for forming monocrystalline silicon carbide on silicon substrates |
GB9023268D0 (en) * | 1990-10-25 | 1990-12-05 | Nat Res Dev | Sol-gel method of making silicon carbide and of protecting a substrate |
DE19503976C1 (en) | 1995-02-07 | 1996-05-09 | Max Planck Gesellschaft | Single crystal epitaxial silicon carbide layer prodn |
JP4858954B2 (en) * | 2006-03-29 | 2012-01-18 | 独立行政法人産業技術総合研究所 | Mesoporous silicon carbide film and method for manufacturing the same |
JP2010215417A (en) * | 2009-03-13 | 2010-09-30 | Japan Atomic Energy Agency | Method for producing ceramic thin film for gas separation |
JP2011079725A (en) * | 2009-10-09 | 2011-04-21 | Shin-Etsu Chemical Co Ltd | Silicon carbide impregnated carbon material |
US20130287941A1 (en) * | 2012-04-27 | 2013-10-31 | General Electric Company | Method of producing a melt-infiltrated ceramic matrix composite article |
DE102015105085A1 (en) * | 2015-04-01 | 2016-10-06 | Universität Paderborn | Method for producing a silicon carbide-containing body |
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2017
- 2017-06-09 DE DE102017112756.9A patent/DE102017112756A1/en not_active Withdrawn
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2018
- 2018-06-04 WO PCT/EP2018/064621 patent/WO2018224438A1/en active Application Filing
- 2018-06-04 CN CN201880038155.0A patent/CN110719900A/en active Pending
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CN110719900A (en) | 2020-01-21 |
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