EP2671255A4 - Electrode structures for arrays of nanostructures and methods thereof - Google Patents

Electrode structures for arrays of nanostructures and methods thereof

Info

Publication number
EP2671255A4
EP2671255A4 EP12790253.4A EP12790253A EP2671255A4 EP 2671255 A4 EP2671255 A4 EP 2671255A4 EP 12790253 A EP12790253 A EP 12790253A EP 2671255 A4 EP2671255 A4 EP 2671255A4
Authority
EP
European Patent Office
Prior art keywords
nanostructures
arrays
methods
electrode structures
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12790253.4A
Other languages
German (de)
French (fr)
Other versions
EP2671255A1 (en
Inventor
Matthew L Scullin
Madhav A Karri
Adam Lorimer
Sylvain Muckenhirn
Gabriel Matus
Justin Tynes Kardel
Barbara Wacker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alphabet Energy Inc
Original Assignee
Alphabet Energy Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/331,768 external-priority patent/US20120152295A1/en
Application filed by Alphabet Energy Inc filed Critical Alphabet Energy Inc
Publication of EP2671255A1 publication Critical patent/EP2671255A1/en
Publication of EP2671255A4 publication Critical patent/EP2671255A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
EP12790253.4A 2011-02-02 2012-02-01 Electrode structures for arrays of nanostructures and methods thereof Withdrawn EP2671255A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161438709P 2011-02-02 2011-02-02
US13/331,768 US20120152295A1 (en) 2010-12-21 2011-12-20 Arrays of filled nanostructures with protruding segments and methods thereof
PCT/US2012/023425 WO2012161757A1 (en) 2011-02-02 2012-02-01 Electrode structures for arrays of nanostructures and methods thereof

Publications (2)

Publication Number Publication Date
EP2671255A1 EP2671255A1 (en) 2013-12-11
EP2671255A4 true EP2671255A4 (en) 2015-10-28

Family

ID=47217566

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12790253.4A Withdrawn EP2671255A4 (en) 2011-02-02 2012-02-01 Electrode structures for arrays of nanostructures and methods thereof

Country Status (7)

Country Link
EP (1) EP2671255A4 (en)
JP (1) JP2014510396A (en)
KR (1) KR20140012073A (en)
CN (1) CN103460387A (en)
BR (1) BR112013019766A2 (en)
CA (1) CA2825888A1 (en)
WO (1) WO2012161757A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2013212087A1 (en) 2012-01-25 2014-08-07 Alphabet Energy, Inc. Modular thermoelectric units for heat recovery systems and methods thereof
US9257627B2 (en) 2012-07-23 2016-02-09 Alphabet Energy, Inc. Method and structure for thermoelectric unicouple assembly
US9065017B2 (en) 2013-09-01 2015-06-23 Alphabet Energy, Inc. Thermoelectric devices having reduced thermal stress and contact resistance, and methods of forming and using the same
CN103579484A (en) * 2013-11-05 2014-02-12 姚芸 Metallic conductor electrode for thermoelectric generator
TWI570972B (en) * 2016-01-20 2017-02-11 財團法人工業技術研究院 Thermoelectric conversion device and thermoelectric converter
JP6830587B2 (en) * 2016-04-11 2021-02-17 学校法人東京理科大学 A columnar ingot substrate with a conductive film and its manufacturing method, a silicide-based thermoelectric conversion element and its manufacturing method, a thermoelectric conversion module, and a composition for forming an electrode layer of the silicide-based thermoelectric conversion element.
WO2019003581A1 (en) * 2017-06-27 2019-01-03 株式会社村田製作所 Thermoelectric conversion module and electronic component module
WO2019003582A1 (en) * 2017-06-27 2019-01-03 株式会社村田製作所 Thermoelectric conversion module and electronic component module
KR102265762B1 (en) * 2019-11-27 2021-06-15 한국세라믹기술원 Infrared rejecting transparent electrode adhesive and smart window using the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050060884A1 (en) * 2003-09-19 2005-03-24 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
US20050112872A1 (en) * 2003-11-25 2005-05-26 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
US20060266402A1 (en) * 2005-05-26 2006-11-30 An-Ping Zhang Thermal transfer and power generation devices and methods of making the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3600486B2 (en) * 1999-08-24 2004-12-15 セイコーインスツル株式会社 Manufacturing method of thermoelectric conversion element
CA2442985C (en) * 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US8154093B2 (en) * 2002-01-16 2012-04-10 Nanomix, Inc. Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices
JP2004031696A (en) * 2002-06-26 2004-01-29 Kyocera Corp Thermoelectric module and method for manufacturing the same
WO2008060282A1 (en) * 2006-11-17 2008-05-22 General Electric Company Thermal transfer and power generation devices and methods of making the same
US8049203B2 (en) * 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such
US20080178920A1 (en) * 2006-12-28 2008-07-31 Schlumberger Technology Corporation Devices for cooling and power
US7905013B2 (en) * 2007-06-04 2011-03-15 Sharp Laboratories Of America, Inc. Method for forming an iridium oxide (IrOx) nanowire neural sensor array
JP4925964B2 (en) * 2007-08-06 2012-05-09 株式会社デンソー Multilayer thermoelectric conversion element and method for manufacturing the same
FR2923601B1 (en) * 2007-11-12 2010-01-01 Commissariat Energie Atomique AN ELECTROMAGNETIC RADIATION DETECTOR WITH NANOFIL CONNECTION AND METHOD OF MAKING SAME
TWI401830B (en) * 2008-12-31 2013-07-11 Ind Tech Res Inst Low heat leakage thermoelectric nanowire arrays and manufacture method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050060884A1 (en) * 2003-09-19 2005-03-24 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
US20050112872A1 (en) * 2003-11-25 2005-05-26 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
US20060266402A1 (en) * 2005-05-26 2006-11-30 An-Ping Zhang Thermal transfer and power generation devices and methods of making the same

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2012161757A1 *

Also Published As

Publication number Publication date
EP2671255A1 (en) 2013-12-11
KR20140012073A (en) 2014-01-29
WO2012161757A1 (en) 2012-11-29
CA2825888A1 (en) 2012-11-29
JP2014510396A (en) 2014-04-24
BR112013019766A2 (en) 2019-09-24
CN103460387A (en) 2013-12-18

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Inventor name: KARDEL, JUSTIN, TYNES

Inventor name: KARRI, MADHAV, A.

Inventor name: SCULLIN, MATTHEW, L.

Inventor name: MATUS, GABRIEL

Inventor name: WACKER, BARBARA

Inventor name: LORIMER, ADAM

Inventor name: MUCKENHIRN, SYLVAIN

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