EP2575220A2 - Tunable laser with integrated wavelength reference - Google Patents
Tunable laser with integrated wavelength reference Download PDFInfo
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- EP2575220A2 EP2575220A2 EP12006832A EP12006832A EP2575220A2 EP 2575220 A2 EP2575220 A2 EP 2575220A2 EP 12006832 A EP12006832 A EP 12006832A EP 12006832 A EP12006832 A EP 12006832A EP 2575220 A2 EP2575220 A2 EP 2575220A2
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- wavelength
- tunable laser
- tunable
- silicon
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 49
- 230000003287 optical effect Effects 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000002210 silicon-based material Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 15
- 230000001419 dependent effect Effects 0.000 claims description 6
- 238000012876 topography Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
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- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/0014—Monitoring arrangements not otherwise provided for
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
- H01S3/0637—Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/0675—Resonators including a grating structure, e.g. distributed Bragg reflectors [DBR] or distributed feedback [DFB] fibre lasers
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
- H01S3/10015—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by monitoring or controlling, e.g. attenuating, the input signal
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- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
- H01S3/10023—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by functional association of additional optical elements, e.g. filters, gratings, reflectors
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
- H01S3/10023—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by functional association of additional optical elements, e.g. filters, gratings, reflectors
- H01S3/1003—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers by functional association of additional optical elements, e.g. filters, gratings, reflectors tunable optical elements, e.g. acousto-optic filters, tunable gratings
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/1305—Feedback control systems
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- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
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- H01S5/024—Arrangements for thermal management
- H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
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- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
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- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
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- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
Definitions
- This disclosure relates generally to the field of photonics, and in particular but not exclusively, tunable semiconductor lasers.
- Wavelength tunable semiconductor laser devices supply optical power and signals used in applications where precise wavelength control must be maintained, such as optical wavelength division multiplexing (WDM) communication systems and fiber optic networks.
- the wavelength of the output of tunable laser devices varies based on a feedback control system. This control system will utilize some form of wavelength dependent optical filters to control the wavelength of the light input to the gain medium of the laser device. Wavelength references will further stabilize the laser output of the device.
- Existing tunable lasers may use a combination of independently fabricated silicon and III-V semiconductor based optical components.
- III-V semiconductor materials are not as effective compared to silicon materials for making low loss, compact, wavelength tunable filters, while silicon materials are not as optically efficient as III-V semiconductor materials for emitting light.
- utilizing silicon-based wavelength filters and having optically active regions with the optical efficiency of III-V semiconductor-based devices requires the combination of separately formed silicon and III-V semiconductor based optical elements. This combination of separately formed optical elements results in a larger optical devices requiring a complex manufacturing processes not on a wafer scale (e.g., hermetic packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.).
- FIG. 1 is a block diagram of a tunable laser according to an embodiment of the invention.
- FIG. 2 is a block diagram of a tunable laser having a thermal based wavelength reference according to an embodiment of the invention
- FIG. 3 is a block diagram of a tunable laser having a ring topography according to an embodiment of the invention.
- FIG. 4 is a block diagram of a tunable laser outputting lasing light via a drop port of a tunable ring filter according to an embodiment of the invention.
- FIG. 5 is a diagram of an optical system utilizing a plurality of cascaded tunable ring filters according to an embodiment of the invention.
- Embodiments of an apparatus, system and method to utilize a silicon substrate-based tunable laser having a wavelength dependent optical filter and a wavelength reference formed in the silicon substrate are described herein.
- Said silicon-based tunable laser will further have a gain region at least partially formed in the silicon substrate.
- FIG. 1 is a block diagram of a tunable laser according to an embodiment of the invention.
- laser 100 includes tunable ring filter (TRF) 110, gain region 120, phase control region 130, output coupler 140 and stabilized wavelength reference 150.
- TRF tunable ring filter
- the above components may be formed in passive regions of silicon substrate 190, except gain region 120, which may be partially formed in an active region of silicon substrate 190 (in one embodiment described below, gain region 120 further includes III-V semiconductor material).
- TRF 110 selects the wavelength for laser 100.
- TRF 110 includes a tuning region which, when a bias voltage is applied, determines the specific wavelength of the signal received by gain region 120.
- Phase control region 130 may perform fine control of the laser characteristics of light received from gain region 120. For example, phase control region 130 may adjust the resonant cavity modes associated with the tunable laser.
- Output coupler 140 extracts at least a portion of the laser light from phase control region 130, and outputs the laser light. Output coupler 140 may further direct a portion of the light to stabilized wavelength reference 150.
- wavelength reference 150 is used to provide wavelength stability for laser 100.
- Wavelength reference 150 receives a portion of the laser output for output coupler 140 to provide easy and accurate wavelength determination of the laser output.
- Wavelength reference 150 may comprise an etalon, interference filter, grating or any functionally equivalent means that passes light at a known wavelength.
- Wavelength reference 150 may be utilized to determine a difference between the light from the gain region to a known wavelength value. TRF 110 may then be adjusted based, at least in part, on this determined difference in order to tune the output of laser 100 (e.g., via an electrical signal sent from wavelength reference 150).
- gain region 120 comprises a first region of formed in silicon material of substrate 190 and a second region of non-silicon material with high electro-optic efficiency, such as III-V semiconductors. Said regions may be fabricated independently and subsequently bonded via any bonding process known in the art.
- the non-silicon semiconductor region of gain region 120 may at least partially overlap the silicon region to create a lateral overlap region; an optical waveguide of the gain region is included in this lateral overlap region, and the waveguide includes both the silicon and the non-silicon material.
- the refractive index of at least one of the silicon material and the non-silicon material within the optical waveguide may change based on an electrical difference applied to the gain region.
- the above described non-silicon material is a group III - V semiconductor material.
- III-V semiconductors have elements that are found in group III and group V of the periodic table (e.g., Indium Phosphide (InP), Indium Gallium Arsenide Phosphide (InGaAsP), Gallium Indium Arsenide Nitride (GaInAsN)).
- the carrier dispersion effects of III-V based materials may be significantly higher than in silicon based materials for bandgaps closer to the wavelength of the light traversing through gain region 120, as electron speed in III-V semiconductors is much faster than that in silicon.
- III-V semiconductor materials enable photonic operation with an increased efficiency at generating light from electricity and converting light back into electricity.
- the active waveguide of gain region 120 is at least partially formed in (or on) the silicon material of substrate 190, and TRF 110, phase control 130 and wavelength reference 150 are also formed in (or on) the silicon material of the substrate.
- wavelength reference 150 may be formed in or on the silicon material of the substrate by depositing resistive material in or on the silicon, doping the silicon material, or any other functionally equivalent means.
- the tuning efficiency of silicon-based TRFs is higher than III-V semiconductor-based TRFs, and silicon-based TRFs have narrower linewidths.
- III-V semiconductor materials are not as efficient compared to silicon for making low loss, efficient TRFs, while silicon semiconductor materials cannot produce an efficient optical gain without heterogeneous integration of III-V semiconductor material.
- utilizing silicon-based TRFs and having the optical efficiency of III-V semiconductor-based gain regions required packaging of silicon and III-V semiconductor based optical elements, resulting in large optical devices that require a complex manufacturing process. Therefore, embodiments of the invention such as the embodiment illustrated in FIG. 1 eliminate the need for bulk optical elements and hermetic packaging, thereby reducing the size and manufacturing complexity of tunable lasing devices.
- FIG. 2 is a block diagram of a tunable laser having a thermal based wavelength reference according to an embodiment of the invention.
- laser 200 includes TRF 210, gain region 220, phase control region 230 and output coupler 240.
- TRF 210 may include a heating element associated with an optical ring resonator.
- Said heating element may be adjusted, based on optical feedback received from output coupler 240, in order to alter the wavelength of laser light passed to gain region 220; said heating element may also be sized to ensure substantial transfer of heat to the respective optical waveguide, and to limit absorbance by the heating element of optical radiation propagating through the respective optical waveguide.
- TRF 210 includes wave stabilization functionality.
- highly stable thermal sensors are integrated to provide a stable wavelength reference for the wavelength of the laser light passed from TRF 210 to gain region 220.
- the wavelength reference is to be integrated within the laser cavity.
- Highly stable resistive temperature devices (RTDs) formed from silicon substrate 290 may be used to measure the temperature of the wavelength filtering elements.
- the cavity filter is arranged such that changes in the refractive index due to stress are minimized and the temperature is directly related to the laser wavelength and thus, determining the laser wavelength may be done by measuring the temperature of the wavelength filtering elements via the above described RTDs.
- FIG. 3 is a block diagram of a tunable laser having an alternative topography according to an embodiment of the invention.
- laser 300 includes TRF 310, gain 320 and output coupler 330 configured in a ring topography which could produce lower linewidth lasers due to the unidirectional light propogation in the laser (as opposed to the bidirectional light propagation illustrated in FIG. 2 ).
- each of these described elements are either partially or entirely formed in the silicon material of substrate 390.
- FIG. 4 is a block diagram of a tunable laser outputting lasing light via a drop port of a tunable ring filter according to an embodiment of the invention.
- laser 400 includes TRF 410 and gain region 420. As described above, each of these described elements are either partially or entirely formed in the silicon material of substrate 490.
- FIG. 5 is a diagram of an optical system utilizing a plurality of cascaded tunable ring filters according to an embodiment of the invention.
- optical system 500 includes tunable laser 501 and silicon evanescent electro-absorption modulator 502.
- the tunable laser further includes tunable ring feedback coupler 510, silicon evanescent gain 520 and laser output coupler 530.
- Tuning ring feedback coupler 510 may include cascaded ring filters 515.
- the ring filters each have slightly different radii and are laterally coupled to input/output waveguide 540 in a cascaded arrangement. It is understood that varying the radii of ring filters 515 slightly allows for a wide range of tuning for laser 501, due to the Vernier effect (i.e., a large tuning effect is accomplished by exploiting the Vernier effect, by which small relative refractive index changes may be used to yield large relative wavelength changes).
- hybridized III-V/silicon gain region hybrid silicon laser or hybrid ridge lasers
- cascaded Vernier ring filters formed from the silicon material of substrate 590 allow for efficient gain from the III-V region, while providing wide tunability, efficient tunability, and narrow linewidth due to the narrow linewidth nature of silicon rings.
- Modulator 502 may perform either amplitude or phase modulation of the light received from tunable laser 501.
- Modulator 502 may include a waveguide comprising silicon and III-V semiconductor material, similar to the gain regions described above.
- optical system 500 is included in a single device or chip, wherein silicon components of system 500 are included on a silicon portion of the chip, and III-V semiconductor components of system 500 are included on a III-V portion of the chip. Said portions may be fabricated independently and subsequently bonded via any bonding process known in the art.
Abstract
Description
- This disclosure relates generally to the field of photonics, and in particular but not exclusively, tunable semiconductor lasers.
- Wavelength tunable semiconductor laser devices supply optical power and signals used in applications where precise wavelength control must be maintained, such as optical wavelength division multiplexing (WDM) communication systems and fiber optic networks. The wavelength of the output of tunable laser devices varies based on a feedback control system. This control system will utilize some form of wavelength dependent optical filters to control the wavelength of the light input to the gain medium of the laser device. Wavelength references will further stabilize the laser output of the device.
- Existing tunable lasers may use a combination of independently fabricated silicon and III-V semiconductor based optical components. III-V semiconductor materials are not as effective compared to silicon materials for making low loss, compact, wavelength tunable filters, while silicon materials are not as optically efficient as III-V semiconductor materials for emitting light. Thus, in the prior art, utilizing silicon-based wavelength filters and having optically active regions with the optical efficiency of III-V semiconductor-based devices requires the combination of separately formed silicon and III-V semiconductor based optical elements. This combination of separately formed optical elements results in a larger optical devices requiring a complex manufacturing processes not on a wafer scale (e.g., hermetic packaging to couple the devices formed on different substrates, precise alignment for the elements, etc.).
- Non-limiting and non-exhaustive embodiments of the invention are described with reference to the following figures, wherein like reference numerals refer to like parts throughout the various views unless otherwise specified. It should be appreciated that the following figures may not be drawn to scale.
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FIG. 1 is a block diagram of a tunable laser according to an embodiment of the invention. -
FIG. 2 is a block diagram of a tunable laser having a thermal based wavelength reference according to an embodiment of the invention -
FIG. 3 is a block diagram of a tunable laser having a ring topography according to an embodiment of the invention. -
FIG. 4 is a block diagram of a tunable laser outputting lasing light via a drop port of a tunable ring filter according to an embodiment of the invention. -
FIG. 5 is a diagram of an optical system utilizing a plurality of cascaded tunable ring filters according to an embodiment of the invention. - Descriptions of certain details and implementations follow, including a description of the figures, which may depict some or all of the embodiments described below, as well as discussing other potential embodiments or implementations of the inventive concepts presented herein. An overview of embodiments of the invention is provided below, followed by a more detailed description with reference to the drawings.
- Embodiments of an apparatus, system and method to utilize a silicon substrate-based tunable laser having a wavelength dependent optical filter and a wavelength reference formed in the silicon substrate are described herein. Said silicon-based tunable laser will further have a gain region at least partially formed in the silicon substrate. In the following description numerous specific details are set forth to provide a thorough understanding of the embodiments. One skilled in the relevant art will recognize, however, that the techniques described herein can be practiced without one or more of the specific details, or with other methods, components, materials, etc. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring certain aspects.
- Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
-
FIG. 1 is a block diagram of a tunable laser according to an embodiment of the invention. In this embodiment,laser 100 includes tunable ring filter (TRF) 110,gain region 120,phase control region 130,output coupler 140 and stabilizedwavelength reference 150. The above components may be formed in passive regions ofsilicon substrate 190, exceptgain region 120, which may be partially formed in an active region of silicon substrate 190 (in one embodiment described below,gain region 120 further includes III-V semiconductor material). - TRF 110 selects the wavelength for
laser 100. TRF 110 includes a tuning region which, when a bias voltage is applied, determines the specific wavelength of the signal received bygain region 120.Phase control region 130 may perform fine control of the laser characteristics of light received fromgain region 120. For example,phase control region 130 may adjust the resonant cavity modes associated with the tunable laser.Output coupler 140 extracts at least a portion of the laser light fromphase control region 130, and outputs the laser light.Output coupler 140 may further direct a portion of the light to stabilizedwavelength reference 150. - In the illustrated embodiment,
wavelength reference 150 is used to provide wavelength stability forlaser 100.Wavelength reference 150 receives a portion of the laser output foroutput coupler 140 to provide easy and accurate wavelength determination of the laser output.Wavelength reference 150 may comprise an etalon, interference filter, grating or any functionally equivalent means that passes light at a known wavelength. -
Wavelength reference 150 may be utilized to determine a difference between the light from the gain region to a known wavelength value. TRF 110 may then be adjusted based, at least in part, on this determined difference in order to tune the output of laser 100 (e.g., via an electrical signal sent from wavelength reference 150). - In one embodiment,
gain region 120 comprises a first region of formed in silicon material ofsubstrate 190 and a second region of non-silicon material with high electro-optic efficiency, such as III-V semiconductors. Said regions may be fabricated independently and subsequently bonded via any bonding process known in the art. The non-silicon semiconductor region ofgain region 120 may at least partially overlap the silicon region to create a lateral overlap region; an optical waveguide of the gain region is included in this lateral overlap region, and the waveguide includes both the silicon and the non-silicon material. Thus, the refractive index of at least one of the silicon material and the non-silicon material within the optical waveguide may change based on an electrical difference applied to the gain region. - In one embodiment, the above described non-silicon material is a group III-V semiconductor material. III-V semiconductors have elements that are found in group III and group V of the periodic table (e.g., Indium Phosphide (InP), Indium Gallium Arsenide Phosphide (InGaAsP), Gallium Indium Arsenide Nitride (GaInAsN)). The carrier dispersion effects of III-V based materials may be significantly higher than in silicon based materials for bandgaps closer to the wavelength of the light traversing through
gain region 120, as electron speed in III-V semiconductors is much faster than that in silicon. Thus, III-V semiconductor materials enable photonic operation with an increased efficiency at generating light from electricity and converting light back into electricity. - Thus, the active waveguide of
gain region 120 is at least partially formed in (or on) the silicon material ofsubstrate 190, andTRF 110,phase control 130 andwavelength reference 150 are also formed in (or on) the silicon material of the substrate. For example,wavelength reference 150 may be formed in or on the silicon material of the substrate by depositing resistive material in or on the silicon, doping the silicon material, or any other functionally equivalent means. The tuning efficiency of silicon-based TRFs is higher than III-V semiconductor-based TRFs, and silicon-based TRFs have narrower linewidths. - III-V semiconductor materials are not as efficient compared to silicon for making low loss, efficient TRFs, while silicon semiconductor materials cannot produce an efficient optical gain without heterogeneous integration of III-V semiconductor material. Thus, in the prior art, utilizing silicon-based TRFs and having the optical efficiency of III-V semiconductor-based gain regions required packaging of silicon and III-V semiconductor based optical elements, resulting in large optical devices that require a complex manufacturing process. Therefore, embodiments of the invention such as the embodiment illustrated in
FIG. 1 eliminate the need for bulk optical elements and hermetic packaging, thereby reducing the size and manufacturing complexity of tunable lasing devices. -
FIG. 2 is a block diagram of a tunable laser having a thermal based wavelength reference according to an embodiment of the invention. In this embodiment,laser 200 includes TRF 210,gain region 220,phase control region 230 andoutput coupler 240. As described above, each of the described elements are either partially or entirely formed in the silicon material ofsubstrate 290, enablingtunable laser 200 to be controlled to the proper wavelength without integrating additional optical components - i.e., optical components not formed from the silicon material of the substrate. TRF 210 may include a heating element associated with an optical ring resonator. Said heating element may be adjusted, based on optical feedback received fromoutput coupler 240, in order to alter the wavelength of laser light passed to gainregion 220; said heating element may also be sized to ensure substantial transfer of heat to the respective optical waveguide, and to limit absorbance by the heating element of optical radiation propagating through the respective optical waveguide. - In this embodiment, TRF 210 includes wave stabilization functionality. In one embodiment, highly stable thermal sensors are integrated to provide a stable wavelength reference for the wavelength of the laser light passed from TRF 210 to gain
region 220. Thus, in this embodiment of the invention, the wavelength reference is to be integrated within the laser cavity. Highly stable resistive temperature devices (RTDs) formed fromsilicon substrate 290 may be used to measure the temperature of the wavelength filtering elements. The cavity filter is arranged such that changes in the refractive index due to stress are minimized and the temperature is directly related to the laser wavelength and thus, determining the laser wavelength may be done by measuring the temperature of the wavelength filtering elements via the above described RTDs. - By eliminating the need to integrate additional optical components for tunable lasers, embodiments of the invention may form other variants of tunable lasers with a reduced device footprint.
FIG. 3 is a block diagram of a tunable laser having an alternative topography according to an embodiment of the invention. In this embodiment,laser 300 includesTRF 310, gain 320 andoutput coupler 330 configured in a ring topography which could produce lower linewidth lasers due to the unidirectional light propogation in the laser (as opposed to the bidirectional light propagation illustrated inFIG. 2 ). As described above, each of these described elements are either partially or entirely formed in the silicon material ofsubstrate 390. -
FIG. 4 is a block diagram of a tunable laser outputting lasing light via a drop port of a tunable ring filter according to an embodiment of the invention. In this embodiment,laser 400 includesTRF 410 and gainregion 420. As described above, each of these described elements are either partially or entirely formed in the silicon material ofsubstrate 490. - The use of an output coupler, as described in previous example embodiments, may be eliminated. For
laser 400, light is output viadrop port 415 ofTRF 410, further reducing the device footprint necessary for a wavelength tunable laser. -
FIG. 5 is a diagram of an optical system utilizing a plurality of cascaded tunable ring filters according to an embodiment of the invention. In this embodiment,optical system 500 includestunable laser 501 and silicon evanescent electro-absorption modulator 502. The tunable laser further includes tunablering feedback coupler 510, siliconevanescent gain 520 andlaser output coupler 530. - Tuning
ring feedback coupler 510 may include cascaded ring filters 515. In this embodiment, the ring filters each have slightly different radii and are laterally coupled to input/output waveguide 540 in a cascaded arrangement. It is understood that varying the radii ofring filters 515 slightly allows for a wide range of tuning forlaser 501, due to the Vernier effect (i.e., a large tuning effect is accomplished by exploiting the Vernier effect, by which small relative refractive index changes may be used to yield large relative wavelength changes). - Thus, the use of a hybridized III-V/silicon gain region (hybrid silicon laser or hybrid ridge lasers) with cascaded Vernier ring filters formed from the silicon material of
substrate 590 allow for efficient gain from the III-V region, while providing wide tunability, efficient tunability, and narrow linewidth due to the narrow linewidth nature of silicon rings. -
Modulator 502 may perform either amplitude or phase modulation of the light received fromtunable laser 501.Modulator 502 may include a waveguide comprising silicon and III-V semiconductor material, similar to the gain regions described above. In one embodiment,optical system 500 is included in a single device or chip, wherein silicon components ofsystem 500 are included on a silicon portion of the chip, and III-V semiconductor components ofsystem 500 are included on a III-V portion of the chip. Said portions may be fabricated independently and subsequently bonded via any bonding process known in the art. - The above description of illustrated embodiments of the invention, including what is described in the Abstract, is not intended to be exhaustive or to limit the invention to the precise forms disclosed. While specific embodiments of, and examples for, the invention are described herein for illustrative purposes, various modifications are possible within the scope of the invention, as those skilled in the relevant art will recognize.
- These modifications can be made to the invention in light of the above detailed description. The terms used in the following claims should not be construed to limit the invention to the specific embodiments disclosed in the specification. Rather, the scope of the invention is to be determined entirely by the following claims, which are to be construed in accordance with established doctrines of claim interpretation.
Claims (22)
- A tunable laser comprising:a silicon substrate;a gain region at least partially formed in the silicon substrate;a wavelength dependent optical filter formed in the silicon substrate to filter a wavelength of light received by the gain region;an output region formed in the silicon substrate to receive light from the gain region and to allow the light to exit the tunable laser; anda wavelength reference formed on the silicon substrate to be used to determine a difference between the wavelength of light from the tunable laser and a wavelength value, the light received by the gain region to be adjusted based, at least in part, on the determined difference.
- The tunable laser of claim 1, further comprising:a phase control region formed in the silicon substrate and disposed between the wavelength dependent optical filter and the gain region.
- The tunable laser of claim 1, wherein the gain region includes a waveguide having a first region formed in the silicon substrate and a second region formed from non-silicon material.
- The tunable laser of claim 3, wherein the non-silicon material comprises III-V semiconductor material.
- The tunable laser of claim 1, wherein the wavelength filter comprises a tunable ring filter.
- The tunable laser of claim 1, wherein the wavelength reference comprises a thermal sensor and determining the difference between the wavelength of light from the tunable laser and the wavelength value includes measuring the temperature of the thermal sensor.
- The tunable laser of claim 6, wherein the wavelength reference is included in the tunable ring filter.
- The tunable laser of claim 1, wherein the output region comprises an output coupler to receive light from the gain region and allow the light to exit the tunable laser.
- The tunable laser of claim 8, wherein the tunable ring filter, gain region and output coupler are configured in a ring topography.
- The tunable laser of claim 6, wherein the output region comprises a drop port included in the tunable ring filter.
- The tunable laser of claim 1, wherein the wavelength filter comprises a plurality of cascaded tunable ring filters, each ring filter having a different radius value.
- A system comprising:a tunable laser including:a silicon substrate;a gain region at least partially formed in the silicon substrate;a wavelength dependent optical filter formed in the silicon substrate to filter a wavelength of light received by the gain region;an output region formed in the silicon substrate to receive light from the gain region and to allow the light to exit the tunable laser; anda wavelength reference formed on the silicon substrate to be used to determine a difference between the wavelength of light from the tunable laser and a wavelength value, the light received by the gain region to be adjusted based, at least in part, on the determined difference; anda modulator to receive the light from the output region.
- The system of claim 12, the tunable laser further including:a phase control region formed in the silicon substrate and disposed between the wavelength dependent optical filter and the gain region.
- The system of claim 12, wherein the gain region of the tunable laser and the modulator each include a waveguide having a first region formed in the silicon substrate and a second region formed from non-silicon material.
- The system of claim 14, wherein the non-silicon material comprises III-V semiconductor material.
- The system of claim 12, wherein the wavelength filter of the tunable laser comprises a tunable ring filter.
- The system of claim 16, wherein the wavelength reference of the tunable laser comprises a thermal sensor and determining the difference between the wavelength of light from the tunable laser and the wavelength value includes measuring the temperature of the thermal sensor.
- The system of claim 17, wherein the wavelength reference is included in the tunable ring filter.
- The system of claim 16, wherein the output region of the tunable laser comprises an output coupler.
- The system of claim 19, wherein the tunable ring filter, gain region and output coupler are configured in a ring topography.
- The system of claim 16, wherein the output region of the tunable laser comprises a drop port included in the tunable ring filter.
- The system of claim 12, wherein the wavelength filter of the tunable laser comprises a plurality of cascaded tunable ring filters, each ring filter having a different radius value.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3020188A1 (en) * | 2014-04-18 | 2015-10-23 | Commissariat Energie Atomique | LASER SOURCE |
WO2019060547A1 (en) * | 2017-09-20 | 2019-03-28 | Macom Technology Solutions Holdings, Inc. | Tunable laser for coherent transmission system |
US11177630B2 (en) | 2018-02-02 | 2021-11-16 | Brolis Sensor Technology, Uab | Wavelength determination for widely tunable lasers and laser systems thereof |
US11298057B2 (en) | 2017-05-22 | 2022-04-12 | Brolis Sensor Technology, Uab | Tunable hybrid III-V/IV laser sensor system-on-a-chip for real-time monitoring of a blood constituent concentration level |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9599613B2 (en) | 2011-07-20 | 2017-03-21 | University Of Washington Through Its Center For Commercialization | Photonic blood typing |
US9692207B2 (en) | 2011-09-30 | 2017-06-27 | Aurrion, Inc. | Tunable laser with integrated wavelength reference |
US10031138B2 (en) | 2012-01-20 | 2018-07-24 | University Of Washington Through Its Center For Commercialization | Hierarchical films having ultra low fouling and high recognition element loading properties |
US9419412B2 (en) * | 2013-11-13 | 2016-08-16 | Agency For Science, Technology And Research | Integrated laser and method of fabrication thereof |
US10243328B2 (en) | 2013-11-20 | 2019-03-26 | Elenion Technologies, Llc | Semiconductor laser |
EP3072188B1 (en) * | 2013-11-20 | 2021-08-25 | Nokia Solutions and Networks Oy | Sagnac loop mirror based laser cavity on silicon photonics platform |
US9450379B2 (en) | 2013-11-20 | 2016-09-20 | Coriant Advanced Technology, LLC | Quantum dot SOA-silicon external cavity multi-wavelength laser |
US9356419B1 (en) | 2015-04-09 | 2016-05-31 | International Business Machines Corporation | Temperature insensitive external cavity lasers on silicon |
US10411430B1 (en) | 2015-04-20 | 2019-09-10 | Aurrion, Inc. | Optical system and method for locking a wavelength of a tunable laser |
JP6973480B2 (en) * | 2017-05-08 | 2021-12-01 | ソニーグループ株式会社 | Laser device assembly |
EP3764489A4 (en) * | 2018-04-09 | 2021-03-24 | Huawei Technologies Co., Ltd. | Laser having tunable wavelength |
US10527784B1 (en) * | 2018-11-15 | 2020-01-07 | General Electric Company | Systems and methods for providing a stable wavelength reference in an integrated photonic circuit |
CN110838673A (en) * | 2019-11-20 | 2020-02-25 | 中国科学院长春光学精密机械与物理研究所 | Tunable narrow linewidth laser |
US11381053B2 (en) * | 2019-12-18 | 2022-07-05 | Globalfoundries U.S. Inc. | Waveguide-confining layer with gain medium to emit subwavelength lasers, and method to form same |
US11698308B2 (en) * | 2020-10-05 | 2023-07-11 | Openlight Photonics, Inc. | Optical temperature measurements in photonic circuits |
CN114552378B (en) | 2020-11-20 | 2023-03-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | Narrow linewidth laser |
Family Cites Families (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5267252A (en) * | 1991-08-30 | 1993-11-30 | Hoya Corporation | Solid-state laser device comprising a temperature-controlled thermal conductive support |
US5349601A (en) * | 1993-09-20 | 1994-09-20 | The United States Of America As Represented By The United States Department Of Energy | Unidirectional ring lasers |
US6349103B1 (en) | 1997-05-07 | 2002-02-19 | Samsung Electronics Co., Ltd. | Cold-start wavelength-division-multiplexed optical transmission system |
US6434175B1 (en) | 1999-08-31 | 2002-08-13 | Corning Incorporated | Multiwavelength distributed bragg reflector phased array laser |
US6633695B2 (en) | 2000-03-06 | 2003-10-14 | Cidra Corporation | Compression-tuned grating-based optical add/drop multiplexer |
US6714556B1 (en) | 2000-07-17 | 2004-03-30 | Advanced Micro Devices, Inc. | In-band management of a stacked group of switches by a single CPU |
US6665320B1 (en) | 2001-01-29 | 2003-12-16 | Lightwave Electronics | Wideband tunable laser sources with multiple gain elements |
JP3929705B2 (en) * | 2001-02-05 | 2007-06-13 | ユーディナデバイス株式会社 | Semiconductor device and chip carrier |
DE60234795D1 (en) | 2001-06-29 | 2010-02-04 | Sumitomo Electric Industries | Pump light source unit, Raman amplifier and optical transmission system |
EP1291988A1 (en) | 2001-09-10 | 2003-03-12 | Intune Technologies Limited | Frequency locking of multi-section laser diodes |
EP1436870A2 (en) | 2001-10-09 | 2004-07-14 | Infinera Corporation | TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPIC) AND OPTICAL TRANSPORT NETWORKS EMPLOYING TxPICs |
WO2003032547A2 (en) | 2001-10-09 | 2003-04-17 | Infinera Corporation | Transmitter photonic integrated circuit |
EP1324516B1 (en) * | 2001-12-21 | 2005-12-14 | Agilent Technologies, Inc. (a Delaware corporation) | Apparatus for detecting cross-talk and method therefor |
KR100515259B1 (en) | 2002-05-03 | 2005-09-15 | 한국과학기술원 | Wavelength-tunable light source and wavelength-division multiplexed transmission system with the sources |
US6665321B1 (en) * | 2002-12-31 | 2003-12-16 | Intel Corporation | Tunable laser operation with locally commensurate condition |
CN100507623C (en) | 2003-03-25 | 2009-07-01 | 富士胶片株式会社 | Core regulating method of synthetic laser and laser synthetic light source |
EP1811619A3 (en) | 2003-05-23 | 2007-08-08 | Rohm and Haas Electronic Materials, L.L.C. | External cavity semiconductor laser and method for fabrication thereof |
TWI251393B (en) * | 2004-03-31 | 2006-03-11 | Nec Corp | Tunable laser |
WO2005099421A2 (en) * | 2004-04-14 | 2005-10-27 | The Trustees Of Princeton University | Monolithic wavelength stabilized asymmetric laser |
CN1997924B (en) | 2004-04-15 | 2016-05-04 | 英飞聂拉股份有限公司 | For the integrated optical circuit (PIC) without refrigeration and floating wavelength grid of WDM transmission network |
US7424041B2 (en) * | 2004-04-29 | 2008-09-09 | Avago Technologies Fiber Ip Pte Ltd. | Wide tuneable laser sources |
US20060039421A1 (en) * | 2004-08-11 | 2006-02-23 | Rong Huang | Thermally Tunable Laser with Single Solid Etalon Wavelength Locker |
EP2838167A1 (en) * | 2005-01-20 | 2015-02-18 | Massachusetts Institute of Technology | Mode locking methods and apparatus |
US20060239314A1 (en) * | 2005-04-20 | 2006-10-26 | Hosking Lucy G | Electro-optic transducer die mounted directly upon a temperature sensing device |
WO2007107187A1 (en) * | 2006-03-23 | 2007-09-27 | Pirelli & C. S.P.A. | Integrated laser optical source with active and passive sections formed in distinct substrates |
JP2007271704A (en) * | 2006-03-30 | 2007-10-18 | Nec Corp | Variable light control device and variable light control method |
WO2008080171A1 (en) * | 2006-12-22 | 2008-07-03 | Finisar Corporation | Optical transmitter having a widely tunable directly modulated laser and periodic optical spectrum reshaping element |
US7468996B2 (en) | 2006-12-29 | 2008-12-23 | Intel Corporation | External cavity laser tuning element dither servo control |
JP4892467B2 (en) | 2007-12-11 | 2012-03-07 | 日本オプネクスト株式会社 | Laser apparatus and control method thereof |
US7941014B1 (en) * | 2008-04-09 | 2011-05-10 | Sandia Corporation | Optical waveguide device with an adiabatically-varying width |
JP2009278015A (en) | 2008-05-16 | 2009-11-26 | Nec Corp | Planar lightwave circuit and wavelength tunable laser apparatus with the same |
JP2011003591A (en) * | 2009-06-16 | 2011-01-06 | Sumitomo Electric Ind Ltd | Wavelength locker integrated type semiconductor laser element |
US20110008557A1 (en) * | 2009-07-07 | 2011-01-13 | Zeyfang Frederick W | "Compression-molded silicone rubber cap and plug" |
US8630326B2 (en) | 2009-10-13 | 2014-01-14 | Skorpios Technologies, Inc. | Method and system of heterogeneous substrate bonding for photonic integration |
US8615025B2 (en) | 2009-10-13 | 2013-12-24 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser |
US8472805B2 (en) | 2010-05-26 | 2013-06-25 | Google Inc. | Tunable multi-wavelength optical transmitter and transceiver for optical communications based on wavelength division multiplexing |
US8457165B2 (en) | 2010-05-26 | 2013-06-04 | Google Inc. | Tunable multi-wavelength semiconductor laser array for optical communications based on wavelength division multiplexing |
KR101405419B1 (en) * | 2010-06-18 | 2014-06-27 | 한국전자통신연구원 | laser module |
US8559775B2 (en) | 2010-07-22 | 2013-10-15 | Dubravko Ivan Babic | Colorless optical network architecture and network components |
US10720350B2 (en) * | 2010-09-28 | 2020-07-21 | Kla-Tencore Corporation | Etch-resistant coating on sensor wafers for in-situ measurement |
US20130016744A1 (en) * | 2011-07-13 | 2013-01-17 | Oracle International Corporation | Laser source with tunable-grating-waveguide reflections |
US8467122B2 (en) * | 2011-07-13 | 2013-06-18 | Oracle America, Inc. | Hybrid laser source with ring-resonator reflector |
US8724667B2 (en) | 2011-07-22 | 2014-05-13 | Insight Photonic Solutions, Inc. | System and method for multiple laser sources using high semiconductor optical amplifier extinction |
US9692207B2 (en) | 2011-09-30 | 2017-06-27 | Aurrion, Inc. | Tunable laser with integrated wavelength reference |
US8457465B1 (en) | 2012-05-17 | 2013-06-04 | Google Inc. | Optical attenuation system |
-
2011
- 2011-09-30 US US13/249,753 patent/US9692207B2/en active Active
-
2012
- 2012-10-01 EP EP17180806.6A patent/EP3267537B1/en active Active
- 2012-10-01 EP EP12006832.5A patent/EP2575220B1/en active Active
-
2014
- 2014-04-25 US US14/262,502 patent/US9583913B1/en active Active
-
2017
- 2017-01-26 US US15/416,434 patent/US10224695B2/en active Active
Non-Patent Citations (1)
Title |
---|
None |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3020188A1 (en) * | 2014-04-18 | 2015-10-23 | Commissariat Energie Atomique | LASER SOURCE |
US11298057B2 (en) | 2017-05-22 | 2022-04-12 | Brolis Sensor Technology, Uab | Tunable hybrid III-V/IV laser sensor system-on-a-chip for real-time monitoring of a blood constituent concentration level |
US11696707B2 (en) | 2017-05-22 | 2023-07-11 | Brolis Sensor Technology, UAB et al. | Tunable hybrid III-V/IV laser sensor system-on-a chip for real-time monitoring of a blood constituent concentration level |
US11896373B2 (en) | 2017-05-22 | 2024-02-13 | Brolis Sensor Technology, Uab | Tunable hybrid III-V/ IV laser sensor system-on-a chip for real-time monitoring of a blood constituent concentration level |
WO2019060547A1 (en) * | 2017-09-20 | 2019-03-28 | Macom Technology Solutions Holdings, Inc. | Tunable laser for coherent transmission system |
CN111095693A (en) * | 2017-09-20 | 2020-05-01 | 镁可微波技术有限公司 | Tunable laser for coherent transmission systems |
US11018477B2 (en) | 2017-09-20 | 2021-05-25 | Macom Technology Solutions Holdings, Inc. | Tunable laser for coherent transmission system |
CN111095693B (en) * | 2017-09-20 | 2023-12-19 | 镁可微波技术有限公司 | Tunable laser for coherent transmission system |
US11177630B2 (en) | 2018-02-02 | 2021-11-16 | Brolis Sensor Technology, Uab | Wavelength determination for widely tunable lasers and laser systems thereof |
US11201453B2 (en) | 2018-02-02 | 2021-12-14 | Brolis Sensor Technology, Uab | Wavelength determination for widely tunable lasers and laser systems thereof |
Also Published As
Publication number | Publication date |
---|---|
EP2575220B1 (en) | 2017-08-16 |
EP3267537A1 (en) | 2018-01-10 |
US20170141536A1 (en) | 2017-05-18 |
US9583913B1 (en) | 2017-02-28 |
US9692207B2 (en) | 2017-06-27 |
EP3267537B1 (en) | 2023-07-19 |
US10224695B2 (en) | 2019-03-05 |
EP2575220A3 (en) | 2013-09-18 |
US20130083815A1 (en) | 2013-04-04 |
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