EP2404317A4 - Method for releasing a thin-film substrate - Google Patents

Method for releasing a thin-film substrate

Info

Publication number
EP2404317A4
EP2404317A4 EP10749454.4A EP10749454A EP2404317A4 EP 2404317 A4 EP2404317 A4 EP 2404317A4 EP 10749454 A EP10749454 A EP 10749454A EP 2404317 A4 EP2404317 A4 EP 2404317A4
Authority
EP
European Patent Office
Prior art keywords
releasing
thin
film substrate
substrate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10749454.4A
Other languages
German (de)
French (fr)
Other versions
EP2404317A1 (en
Inventor
Rafael Ricolcol
Joe Kramer
David Xuan-Qi Wang
Mehrdad M Moslehi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beamreach Solexel Assets Inc
Original Assignee
Solexel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel Inc filed Critical Solexel Inc
Publication of EP2404317A1 publication Critical patent/EP2404317A1/en
Publication of EP2404317A4 publication Critical patent/EP2404317A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30608Anisotropic liquid etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529Shape of the potential jump barrier or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
EP10749454.4A 2009-03-06 2010-03-08 Method for releasing a thin-film substrate Withdrawn EP2404317A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15822309P 2009-03-06 2009-03-06
PCT/US2010/026570 WO2010102306A1 (en) 2009-03-06 2010-03-08 Method for releasing a thin-film substrate

Publications (2)

Publication Number Publication Date
EP2404317A1 EP2404317A1 (en) 2012-01-11
EP2404317A4 true EP2404317A4 (en) 2014-06-11

Family

ID=42710039

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10749454.4A Withdrawn EP2404317A4 (en) 2009-03-06 2010-03-08 Method for releasing a thin-film substrate

Country Status (2)

Country Link
EP (1) EP2404317A4 (en)
WO (1) WO2010102306A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8193076B2 (en) 2006-10-09 2012-06-05 Solexel, Inc. Method for releasing a thin semiconductor substrate from a reusable template
WO2014011260A2 (en) * 2012-04-02 2014-01-16 Solexel, Inc. High efficiency solar cell structures and manufacturing methods
EP3062907A4 (en) 2013-10-30 2017-08-16 Hewlett-Packard Development Company, L.P. Island etched filter passages
EP3062918B1 (en) 2013-10-30 2021-03-17 Hewlett-Packard Development Company, L.P. Nonparallel island etching
CN105489705A (en) * 2015-12-30 2016-04-13 无锡赛晶太阳能有限公司 Etching and cleaning process for manufacturing crystalline silicon solar cell
CN115001429B (en) * 2022-08-03 2022-11-25 迈感微电子(上海)有限公司 Preparation method of filter

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331208B1 (en) * 1998-05-15 2001-12-18 Canon Kabushiki Kaisha Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor
US20080157283A1 (en) * 2006-10-09 2008-07-03 Mehrdad Moslehi Template for three-dimensional thin-film solar cell manufacturing and methods of use
US20080210294A1 (en) * 2006-10-09 2008-09-04 Mehrdad Moslehi Solar module structures and assembly methods for pyramidal three-dimensional thin-film solar cells

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6058945A (en) * 1996-05-28 2000-05-09 Canon Kabushiki Kaisha Cleaning methods of porous surface and semiconductor surface
US7244682B2 (en) * 2004-05-06 2007-07-17 Micron Technology, Inc. Methods of removing metal-containing materials
WO2006058034A2 (en) * 2004-11-22 2006-06-01 Intermolecular, Inc. Molecular self-assembly in substrate processing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331208B1 (en) * 1998-05-15 2001-12-18 Canon Kabushiki Kaisha Process for producing solar cell, process for producing thin-film semiconductor, process for separating thin-film semiconductor, and process for forming semiconductor
US20080157283A1 (en) * 2006-10-09 2008-07-03 Mehrdad Moslehi Template for three-dimensional thin-film solar cell manufacturing and methods of use
US20080210294A1 (en) * 2006-10-09 2008-09-04 Mehrdad Moslehi Solar module structures and assembly methods for pyramidal three-dimensional thin-film solar cells

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2010102306A1 *

Also Published As

Publication number Publication date
WO2010102306A1 (en) 2010-09-10
EP2404317A1 (en) 2012-01-11

Similar Documents

Publication Publication Date Title
IL259567A (en) System and method for inspecting a substrate
EP2260506A4 (en) Method for forming a compound semi-conductor thin-film
PL2424824T3 (en) Method for coating a substrate with a composite
PL3243631T3 (en) Method for producing projections on a substrate
EG27080A (en) Thin film deposition method
IL228919A0 (en) A chemical method for soil improvement
PT2683669T (en) Method for obtaining a substrate provided with a coating
EP2544515A4 (en) Method for manufacturing a metallized substrate
GB201208994D0 (en) Spalling for a semiconductor substrate
EP2417623A4 (en) Techniques for processing a substrate
EP2521116A4 (en) Method for manufacturing a display device
EP2487709A4 (en) Method for manufacturing a semiconductor device
EP2417622A4 (en) Techniques for processing a substrate
EP2417624A4 (en) Techniques for processing a substrate
EP2404317A4 (en) Method for releasing a thin-film substrate
EP2492030A4 (en) Method for manufacturing a heat-pipe-type heat-dissipating device
EP2475517A4 (en) Method for manufacturing a board
EP2438560A4 (en) A method for secure transactions
EP2426238A4 (en) METHOD FOR FABRICATING SiC SUBSTRATE
GB201010332D0 (en) Method for marking a substrate
TWI561631B (en) A method for making a culture substrate
EP2463402A4 (en) Apparatus for producing a thin-film lamination
IL202549A0 (en) Coated article an method for making a coated article
EP2474002A4 (en) Method for long term deposit
EP2373342A4 (en) Method for inducing a trif-bias

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20111006

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20140514

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 31/18 20060101ALI20140508BHEP

Ipc: H01L 21/4763 20060101AFI20140508BHEP

Ipc: H01L 27/142 20140101ALI20140508BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20141213