EP1656701A4 - Semiconductor device and method - Google Patents

Semiconductor device and method

Info

Publication number
EP1656701A4
EP1656701A4 EP04781659A EP04781659A EP1656701A4 EP 1656701 A4 EP1656701 A4 EP 1656701A4 EP 04781659 A EP04781659 A EP 04781659A EP 04781659 A EP04781659 A EP 04781659A EP 1656701 A4 EP1656701 A4 EP 1656701A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04781659A
Other languages
German (de)
French (fr)
Other versions
EP1656701A2 (en
Inventor
Milton Feng
Nick Holonyak Jr
Walid Hafez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Illinois
Original Assignee
University of Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/646,457 external-priority patent/US20050040432A1/en
Priority claimed from US10/861,103 external-priority patent/US7091082B2/en
Priority claimed from US10/861,320 external-priority patent/US7998807B2/en
Application filed by University of Illinois filed Critical University of Illinois
Publication of EP1656701A2 publication Critical patent/EP1656701A2/en
Publication of EP1656701A4 publication Critical patent/EP1656701A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Lasers (AREA)
EP04781659A 2003-08-22 2004-08-20 Semiconductor device and method Withdrawn EP1656701A4 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/646,457 US20050040432A1 (en) 2003-08-22 2003-08-22 Light emitting device and method
US10/861,103 US7091082B2 (en) 2003-08-22 2004-06-04 Semiconductor method and device
US10/861,320 US7998807B2 (en) 2003-08-22 2004-06-04 Method for increasing the speed of a light emitting biopolar transistor device
PCT/US2004/027019 WO2005020287A2 (en) 2003-08-22 2004-08-20 Semiconductor device and method

Publications (2)

Publication Number Publication Date
EP1656701A2 EP1656701A2 (en) 2006-05-17
EP1656701A4 true EP1656701A4 (en) 2007-10-10

Family

ID=34222410

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04781659A Withdrawn EP1656701A4 (en) 2003-08-22 2004-08-20 Semiconductor device and method

Country Status (5)

Country Link
EP (1) EP1656701A4 (en)
JP (1) JP2007503710A (en)
KR (1) KR20060063947A (en)
CA (1) CA2536329A1 (en)
WO (1) WO2005020287A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006317571A (en) * 2005-05-11 2006-11-24 Fuji Photo Film Co Ltd Optical compensation film, polarizing plate and liquid crystal display
US7535034B2 (en) 2006-02-27 2009-05-19 The Board Of Trustees Of The University Of Illinois PNP light emitting transistor and method
KR20070117238A (en) * 2006-06-08 2007-12-12 삼성전기주식회사 Semiconductor light emitting transistor
US7711015B2 (en) * 2007-04-02 2010-05-04 The Board Of Trustees Of The University Of Illinois Method for controlling operation of light emitting transistors and laser transistors
CN100466313C (en) * 2007-05-21 2009-03-04 华南师范大学 Ppn-type light-emitting transistor and its manufacture method
US7953133B2 (en) 2007-10-12 2011-05-31 The Board Of Trustees Of The University Of Illinois Light emitting and lasing semiconductor devices and methods
US7813396B2 (en) 2007-10-12 2010-10-12 The Board Of Trustees Of The University Of Illinois Transistor laser devices and methods
WO2009093177A1 (en) * 2008-01-21 2009-07-30 Insiava (Pty) Limited Semiconductor light emitting device utilising punch-through effects
US8638830B2 (en) * 2009-01-08 2014-01-28 Quantum Electro Opto Systems Sdn. Bhd. Light emitting and lasing semiconductor devices and methods
JP5739357B2 (en) * 2011-03-04 2015-06-24 日本電信電話株式会社 Heterojunction bipolar transistor
WO2014004375A1 (en) 2012-06-25 2014-01-03 Quantum Electro Opto Systems Sdn. Bhd. Method and apparatus for aligning of opto-electronic components
US8948226B2 (en) 2012-08-20 2015-02-03 The Board Of Trustees Of The University Of Illinois Semiconductor device and method for producing light and laser emission
US10874876B2 (en) * 2018-01-26 2020-12-29 International Business Machines Corporation Multiple light sources integrated in a neural probe for multi-wavelength activation
JP7216270B2 (en) * 2018-09-28 2023-02-01 日亜化学工業株式会社 semiconductor light emitting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61231788A (en) * 1985-04-08 1986-10-16 Matsushita Electric Ind Co Ltd Semiconductor light emitting element

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04237135A (en) * 1991-01-21 1992-08-25 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laminated layer structure
US5239550A (en) * 1991-12-03 1993-08-24 University Of Connecticut Transistor lasers
JP2853432B2 (en) * 1992-01-08 1999-02-03 日本電気株式会社 Semiconductor optical integrated device
JPH06260493A (en) * 1993-03-05 1994-09-16 Mitsubishi Electric Corp Semiconductor device
US5293050A (en) * 1993-03-25 1994-03-08 International Business Machines Corporation Semiconductor quantum dot light emitting/detecting devices
SE511314C2 (en) * 1997-02-07 1999-09-06 Ericsson Telefon Ab L M Preparation of heterobipolar transistor and laser diode on the same substrate
US6707074B2 (en) * 2000-07-04 2004-03-16 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and apparatus for driving the same
JP2002164352A (en) * 2000-09-13 2002-06-07 Toshiba Corp Bipolar transistor, semiconductor light-emitting device, and semiconductor device
JP2002190448A (en) * 2000-12-20 2002-07-05 Fujitsu Ltd Substrate, electronic device, and their manufacturing method
FR2820890A1 (en) * 2001-02-15 2002-08-16 Cit Alcatel MONOLITHIC INTEGRATED OPTICAL COMPONENT HAVING A BIPOLAR HETEROJUNCTION TRANSISTOR

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61231788A (en) * 1985-04-08 1986-10-16 Matsushita Electric Ind Co Ltd Semiconductor light emitting element

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
FENG M ET AL: "Light-emitting transistor: light emission from InGaP/GaAs heterojunction bipolar transistors", APPLIED PHYSICS LETTERS AIP USA, vol. 84, no. 1, 5 January 2004 (2004-01-05), pages 151 - 153, XP002448259, ISSN: 0003-6951 *
FENG M ET AL: "Quantum-well-base heterojunction bipolar light-emitting transistor", APPLIED PHYSICS LETTERS AIP USA, vol. 84, no. 11, 15 March 2004 (2004-03-15), pages 1952 - 1954, XP002448258, ISSN: 0003-6951 *
JAIN F ET AL: "RESONANT TUNNELING TRANSISTOR LASERS: A NEW APPROACH TO OBTAIN MULTI-STATE SWITCHING AND BISTABLE OPERATION", INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, SPRINGER, DORDRECHT, NL, vol. 14, no. 6, 1 June 1993 (1993-06-01), pages 1311 - 1322, XP000381013, ISSN: 0195-9271 *
MORI Y ET AL: "Operation principle of the InGaAsP/InP laser transistor", APPLIED PHYSICS LETTERS USA, vol. 47, no. 7, 1 October 1985 (1985-10-01), pages 649 - 651, XP002448260, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
WO2005020287A9 (en) 2005-03-31
CA2536329A1 (en) 2005-03-03
KR20060063947A (en) 2006-06-12
WO2005020287A3 (en) 2005-05-06
EP1656701A2 (en) 2006-05-17
JP2007503710A (en) 2007-02-22
WO2005020287A2 (en) 2005-03-03

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Legal Events

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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17P Request for examination filed

Effective date: 20060307

AK Designated contracting states

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Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20070912

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 29/737 20060101ALI20070903BHEP

Ipc: H01L 29/205 20060101AFI20050512BHEP

Ipc: H01L 33/00 20060101ALI20070903BHEP

Ipc: H01S 5/06 20060101ALI20070903BHEP

17Q First examination report despatched

Effective date: 20130703

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20170301