EP1329913A4 - Magnetic semiconductor material and method for preparation thereof - Google Patents

Magnetic semiconductor material and method for preparation thereof

Info

Publication number
EP1329913A4
EP1329913A4 EP01961155A EP01961155A EP1329913A4 EP 1329913 A4 EP1329913 A4 EP 1329913A4 EP 01961155 A EP01961155 A EP 01961155A EP 01961155 A EP01961155 A EP 01961155A EP 1329913 A4 EP1329913 A4 EP 1329913A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor material
magnetic semiconductor
preparation
single crystal
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01961155A
Other languages
German (de)
French (fr)
Other versions
EP1329913A1 (en
Inventor
Katsuaki Sato
Gennadiy Medvedkin
Takayuki Ishibashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Japan Science and Technology Agency
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science and Technology Agency filed Critical Japan Science and Technology Agency
Publication of EP1329913A1 publication Critical patent/EP1329913A1/en
Publication of EP1329913A4 publication Critical patent/EP1329913A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/40—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4
    • H01F1/401—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials of magnetic semiconductor materials, e.g. CdCr2S4 diluted
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/193—Magnetic semiconductor compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Hall/Mr Elements (AREA)
  • Hard Magnetic Materials (AREA)

Abstract

A magnetic semiconductor material which comprises CdMnGeP2 and has magnetization characteristics at room temperature is prepared by placing a CdGeP2 single crystal (2) in a molecular beam epitaxy apparatus (1) and maintaining the temperature of the single crystal at 390 ° to thereby vapor-deposit Mn thereon in a thickness of 200 Å to 300 Å, and subjecting the resulting product to a heat treatment at 510 ° for one hour.
EP01961155A 2000-08-30 2001-08-29 Magnetic semiconductor material and method for preparation thereof Withdrawn EP1329913A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000261367 2000-08-30
JP2000261367 2000-08-30
PCT/JP2001/007408 WO2002019352A1 (en) 2000-08-30 2001-08-29 Magnetic semiconductor material and method for preparation thereof

Publications (2)

Publication Number Publication Date
EP1329913A1 EP1329913A1 (en) 2003-07-23
EP1329913A4 true EP1329913A4 (en) 2006-08-23

Family

ID=18749218

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01961155A Withdrawn EP1329913A4 (en) 2000-08-30 2001-08-29 Magnetic semiconductor material and method for preparation thereof

Country Status (4)

Country Link
US (1) US7102171B2 (en)
EP (1) EP1329913A4 (en)
JP (1) JP3773899B2 (en)
WO (1) WO2002019352A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060181197A1 (en) * 2004-07-01 2006-08-17 Kumio Nago Electroluminescent device and display
JP5212684B2 (en) * 2007-04-10 2013-06-19 株式会社Ｉｈｉ Magnetic semiconductor manufacturing method and manufacturing apparatus
US8084374B2 (en) * 2009-11-19 2011-12-27 Washington University In St. Louis Tuning of photo-absorption materials through use of magnetic fields
CN106637416B (en) * 2016-12-28 2018-11-20 厦门大学 Molecular beam epitaxy and its in-situ characterization device under vector high-intensity magnetic field
CN109841369B (en) * 2017-11-24 2020-06-02 中国科学院物理研究所 Diluted magnetic semiconductor material with giant magnetoresistance effect and preparation method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474673A (en) * 1977-11-28 1979-06-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3719481A (en) * 1970-03-07 1973-03-06 Xerox Corp Electrostatographic imaging process
JP3337494B2 (en) 1992-07-24 2002-10-21 松下電器産業株式会社 Method of manufacturing solar cell and thin-film solar cell
JP3068416B2 (en) * 1994-08-26 2000-07-24 日本電気株式会社 Information recording medium
JP2990036B2 (en) * 1995-02-13 1999-12-13 ティーディーケイ株式会社 Optical recording medium and manufacturing method thereof
US5736657A (en) * 1995-03-31 1998-04-07 Ricoh Company, Ltd. Sputtering target
EP2360298A3 (en) * 2000-08-22 2011-10-05 President and Fellows of Harvard College Method for depositing a semiconductor nanowire

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474673A (en) * 1977-11-28 1979-06-14 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GENTILE,A.L.: "Crystal Growth of AIIBIVC2V Chalcopyrites", MATERIALS RESEARCH BULLETIN USA, vol. 9, no. 2, February 1974 (1974-02-01), US, pages 105 - 116, XP002388198, ISSN: 0025-5408 *
MEDVEDKIN G A ET AL: "ROOM TEMPERATURE FERROMAGNETISM IN NOVEL DILUTED MAGNETIC SEMICONDUCTOR CD1-XMNXGEP2", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO, JP, vol. 39, no. 10A, PART 2, 1 October 2000 (2000-10-01), pages L949 - L951, XP000977021, ISSN: 0021-4922 *
PATENT ABSTRACTS OF JAPAN vol. 003, no. 096 (E - 130) 15 August 1979 (1979-08-15) *

Also Published As

Publication number Publication date
EP1329913A1 (en) 2003-07-23
US20040014244A1 (en) 2004-01-22
JP3773899B2 (en) 2006-05-10
WO2002019352A1 (en) 2002-03-07
US7102171B2 (en) 2006-09-05

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Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20030320

AK Designated contracting states

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE TR

RIN1 Information on inventor provided before grant (corrected)

Inventor name: SATO, KATSUAKI

Inventor name: ISHIBASHI, TAKAYUKI

Inventor name: MEDVEDKIN, GENNADIY

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: JAPAN SCIENCE AND TECHNOLOGY AGENCY

RBV Designated contracting states (corrected)

Designated state(s): DE FR GB NL

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: JAPAN SCIENCE AND TECHNOLOGY AGENCY

A4 Supplementary search report drawn up and despatched

Effective date: 20060720

17Q First examination report despatched

Effective date: 20061019

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20080901