EP0649184A2 - Arrangement for the radiation of millimeter waves - Google Patents

Arrangement for the radiation of millimeter waves Download PDF

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Publication number
EP0649184A2
EP0649184A2 EP94115637A EP94115637A EP0649184A2 EP 0649184 A2 EP0649184 A2 EP 0649184A2 EP 94115637 A EP94115637 A EP 94115637A EP 94115637 A EP94115637 A EP 94115637A EP 0649184 A2 EP0649184 A2 EP 0649184A2
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EP
European Patent Office
Prior art keywords
carrier plate
substrate
heat sink
arrangement
arrangement according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP94115637A
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German (de)
French (fr)
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EP0649184A3 (en
EP0649184B1 (en
Inventor
Hartmut Dr. Presting
Josef Dr. Büchler
Maximilian Dr. Kuisl
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Mercedes Benz Group AG
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Daimler Benz AG
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Publication date
Application filed by Daimler Benz AG filed Critical Daimler Benz AG
Publication of EP0649184A2 publication Critical patent/EP0649184A2/en
Publication of EP0649184A3 publication Critical patent/EP0649184A3/en
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Publication of EP0649184B1 publication Critical patent/EP0649184B1/en
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
    • H01Q13/10—Resonant slot antennas
    • H01Q13/18—Resonant slot antennas the slot being backed by, or formed in boundary wall of, a resonant cavity ; Open cavity antennas

Definitions

  • the invention relates to an arrangement for emitting millimeter waves.
  • Such an arrangement is known for example from IEEE Microwave and Guided Wave Letters, Vol. 3, April 93, pp. 95-97, "Active Cavity-Backed Slot Antenna Using MESFETs" by HP Moyer and RA York. Coupling the antenna with the cavity resonator increases the power radiation and improves the antenna pattern.
  • a GaAs MESFET is combined with a planar antenna and matching network.
  • the invention has for its object to provide an arrangement for emitting millimeter waves with further improved efficiency.
  • the invention makes use of the knowledge that rapid dissipation of the power loss occurring in the active semiconductor component improves the efficiency of the component and is particularly advantageous for oscillator arrangements with higher operating frequencies on silicon substrates.
  • a mm-wave diode D for example an IMPATT diode
  • a mm-wave diode D is implemented as an active semiconductor component and supplemented with an integrated slot resonator SR to form an integrated transmission arrangement.
  • the substrate is attached with the end (layer side) containing the diode and the slot resonator structure to a carrier plate T ("upside down").
  • the side of the carrier plate T facing the substrate carries the lead structure V required for connecting the transmitter arrangement.
  • This lead structure is preferably produced in an etching process from a full-area metallization of the carrier plate.
  • the substrate S is advantageously attached to the carrier plate T by bonding (thermocompression) but can also be carried out by other connection techniques, for example soldering.
  • the thermal conductivity of the material of the carrier plate is advantageously greater than 1 W / cm.K.
  • the thermal conductivity of the plate material is preferably greater than that of the substrate material.
  • the carrier plate is fastened on a heat sink W, in which a cavity resonator is formed.
  • the heat sink W is a copper block, for example.
  • the cavity resonator in the heat sink is advantageously formed by a cylindrical hole L in the copper block, which is closed on the side facing away from the carrier plate with an electrically conductive closing film F, which e.g. is connected to the copper block by soft soldering.
  • the final film is preferably made of gold or copper.
  • the carrier plate advantageously has an opening K through which the slot antenna SR of the substrate S is coupled to the cavity resonator.
  • the shape and size of the opening is adapted to the antenna element of the substrate and is preferably slightly larger than this.
  • the breakthrough is preferably positioned centrally over the cavity resonator.
  • the antenna SR of the substrate is adjusted to the opening in the carrier plate.
  • the walls of the opening K and the side of the carrier plate T facing the resonator are continuously electrically conductive, for example through a vapor-deposited metal layer, so that a wave coupling into a carrier plate made of dielectric material is avoided.
  • the carrier plate can also consist of metal, for example copper, in which case the isolation from the substrate and between the separate conductors of the supply structure must be ensured, for example by an additional insulation layer on the metallic carrier plate.
  • AlN is advantageously chosen as the dielectric material for the carrier plate, which has good thermal conductivity (1.7 W / cm. K) and a coefficient of thermal expansion similar to silicon as the substrate material.
  • the carrier plate is attached to the heat sink with good thermal conductivity, e.g. by soft soldering.
  • the closing film, the walls of the cylindrical hole L in the heat sink and the side of the carrier plate facing the heat sink with the walls of the opening K form, as electrically well-connected surfaces, the cavity resonator whose resonance frequency at least approximately matches the resonance frequency of the oscillator arrangement on the substrate.
  • the operating frequency can be tuned and stabilized by the cavity resonator within the pulling range of the oscillator arrangement.
  • the transmission power is emitted primarily through the substrate, which is further favored by the "upside down” arrangement in the invention.
  • this arrangement in conjunction with the opening through the carrier plate ensures a defined coupling to the cavity resonator.
  • the arrangement is favorable for the dissipation of the power loss due to the short Path to the heat-dissipating carrier plate, which can also be viewed as part of a multi-part heat sink T, W, F.
  • the side facing away from the carrier plate can be geometrically structured for beam shaping and / or polarization adjustment, for example by means of a relief or a structured layer.
  • the basic idea of the invention is in principle not limited to the frequency range of the mm waves.

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Abstract

A semiconductor substrate having an integrated antenna element is mounted upside down on a carrier plate, which is highly thermally conductive, for an arrangement for radiating millimetric waves. For its part, this carrier plate is connected to a heat sink in a highly thermally conductive manner. A cavity resonator is constructed in the heat sink. The efficiency of the semiconductor component can be improved by the rapid dissipation of the heat lost from the semiconductor component, from the substrate into the heat sink. <IMAGE>

Description

Die Erfindung betrifft eine Anordnung zur Abstrahlung von Millimeterwellen.The invention relates to an arrangement for emitting millimeter waves.

Eine derartige Anordnung ist beispielsweise aus IEEE Microwave and Guided Wave Letters, Vol. 3, April 93, S. 95-97, " Active Cavity-Backed Slot Antenna Using MESFETs" von H.P. Moyer und R.A. York bekannt. Durch die Kopplung der Antenne mit dem Hohlraumresonator wird die Leistungsabstrahlung erhöht und das Antennendiagramm verbessert. Als Oszillatoranordnung bei 10 GHz ist ein GaAs-MESFET mit einem planaren Antennen- und Anpassungsnetzwerk kombiniert.Such an arrangement is known for example from IEEE Microwave and Guided Wave Letters, Vol. 3, April 93, pp. 95-97, "Active Cavity-Backed Slot Antenna Using MESFETs" by HP Moyer and RA York. Coupling the antenna with the cavity resonator increases the power radiation and improves the antenna pattern. As an oscillator arrangement at 10 GHz, a GaAs MESFET is combined with a planar antenna and matching network.

Der Erfindung liegt die Aufgabe zugrunde, eine Anordnung zur Abstrahlung von Millimeterwellen mit weiter verbessertem Wirkungsgrad anzugeben.The invention has for its object to provide an arrangement for emitting millimeter waves with further improved efficiency.

Die Erfindung ist im Patentanspruch 1 beschrieben. Die Unteransprüche enthalten vorteilhafte Ausgestaltungen und Weiterbildungen der Erfindung.The invention is described in claim 1. The subclaims contain advantageous refinements and developments of the invention.

Die Erfindung macht sich die Erkenntnis zunutze, daß eine schnelle Abführung der im aktiven Halbleiterbauelement anfallenden Verlustleistung den Wirkungsgrad des Bauelements verbessert und ist insbesondere vorteilhaft für Oszillator-Anordnungen mit höheren Betriebsfrequenzen auf Silizium-Substraten.The invention makes use of the knowledge that rapid dissipation of the power loss occurring in the active semiconductor component improves the efficiency of the component and is particularly advantageous for oscillator arrangements with higher operating frequencies on silicon substrates.

Die Erfindung ist nachfolgend anhand von Ausführungsbeispielen unter Bezugnahme auf die Abbildung eingehend veranschaulicht, in der die einzelnen Teile der Anordnung vor dem Zusammenfügen skizziert sind.The invention is illustrated in detail below by means of exemplary embodiments with reference to the figure, in which the individual parts of the arrangement are outlined before the assembly.

Auf einem Halbleitersubstrat S, vorzugsweise Silizium, ist eine mm-Wellen-Diode D, beispielsweise eine IMPATT-Diode als aktives Halbleiterbauelement realisiert und mit einem integrierten Schlitzresonator SR zu einer integrierten Sendeanordnung ergänzt. Das Substrat wird mit der die Diode und die Schlitzresonatorstruktur enthalt enden Seite (Schichtseite) auf einer Trägerplatte T befestigt ("upside down"). Die dem Substrat zugewandte Seite der Trägerplatte T trägt die Zum Anschluß der Sendeanordnung erforderliche Zuleitungsstruktur V. Diese Zuleitungsstruktur wird vorzugsweise in einem Ätzvorgang aus einer ganzflächigen Metallisierung der Trägerplatte hergestellt.On a semiconductor substrate S, preferably silicon, a mm-wave diode D, for example an IMPATT diode, is implemented as an active semiconductor component and supplemented with an integrated slot resonator SR to form an integrated transmission arrangement. The substrate is attached with the end (layer side) containing the diode and the slot resonator structure to a carrier plate T ("upside down"). The side of the carrier plate T facing the substrate carries the lead structure V required for connecting the transmitter arrangement. This lead structure is preferably produced in an etching process from a full-area metallization of the carrier plate.

Die Befestigung des Substrats S auf der Trägerplatte T erfolgt vorteilhafterweise durch Aufbonden (Thermokompression) kann aber auch durch andere Verbindungstechniken beispielsweise Löten vorgenommen werden.The substrate S is advantageously attached to the carrier plate T by bonding (thermocompression) but can also be carried out by other connection techniques, for example soldering.

Die Wärmeleitfähigkeit des Materials der Trägerplatte ist vorteilhafterweise größer als 1 W/cm.K. Vorzugsweise ist die Wärmeleitfähigkeit des Plattenmaterials größer als die des Substratmaterials. Die Trägerplatte ist auf einer Wärmesenke W befestigt, in welcher ein Hohlraumresonator ausgebildet ist. Die Wärmesenke W ist beispielsweise ein Kupferblock. Der Hohlraumresonator in der Wärmesenke wird vorteilhafterweise durch ein zylindrisches Loch L in dem Kupferblock gebildet, das auf der der Trägerplatte abgewandten Seite mit einer elektrisch leitenden Abschlußfolie F abgeschlossen ist, die z.B. durch Weichlöten mit dem Kupferblock verbunden ist. Die Abschlußfolie besteht vorzugsweise aus Gold oder Kupfer.The thermal conductivity of the material of the carrier plate is advantageously greater than 1 W / cm.K. The thermal conductivity of the plate material is preferably greater than that of the substrate material. The carrier plate is fastened on a heat sink W, in which a cavity resonator is formed. The heat sink W is a copper block, for example. The cavity resonator in the heat sink is advantageously formed by a cylindrical hole L in the copper block, which is closed on the side facing away from the carrier plate with an electrically conductive closing film F, which e.g. is connected to the copper block by soft soldering. The final film is preferably made of gold or copper.

Die Trägerplatte weist vorteilhafterweise einen Durchbruch K auf, durch den die Schlitz-Antenne SR des Substrats S an dem Hohlraumresonator gekoppelt ist. Der Durchbruch ist in Form und Größe an das Antennenelement des Substrats angepaßt und vorzugsweise geringfügig größer als dieses. Der Durchbruch ist vorzugsweise mittig über dem Hohlraumresonator positioniert. Die Antenne SR des Substrats wird auf den Durchbruch der Trägerplatte justiert.The carrier plate advantageously has an opening K through which the slot antenna SR of the substrate S is coupled to the cavity resonator. The shape and size of the opening is adapted to the antenna element of the substrate and is preferably slightly larger than this. The breakthrough is preferably positioned centrally over the cavity resonator. The antenna SR of the substrate is adjusted to the opening in the carrier plate.

Vorzugsweise sind die Wandungen des Durchbruchs K und die dem Resonator zugewandte Seite der Trägerplatte T durchgehend elektrisch leitend, z.B. durch eine aufgedampfte Metallschicht, so daß eine Welleneinkopplung in eine Trägerplatte aus dielektrischem Material vermieden wird. Die Trägerplatte kann auch aus Metall, z.B. Kupfer bestehen, wobei dann die Isolation gegenüber dem Substrat und zwischen den getrennten Leitern der Zuleitungsstruktur gewährleistet sein muß, z.B. durch eine zusätzliche Isolationsschicht auf der metallischen Trägerplatte.Preferably, the walls of the opening K and the side of the carrier plate T facing the resonator are continuously electrically conductive, for example through a vapor-deposited metal layer, so that a wave coupling into a carrier plate made of dielectric material is avoided. The carrier plate can also consist of metal, for example copper, in which case the isolation from the substrate and between the separate conductors of the supply structure must be ensured, for example by an additional insulation layer on the metallic carrier plate.

Als dielektrisches Material für die Trägerplatte ist vorteilhafterveise AlN gewählt, welches eine gute Wärmeleitfähigkeit (1,7 W/cm. K) und einen zu Silizium als Substratmaterial ähnlichen Wärmeausdehnungskoeffizienten aufweist.AlN is advantageously chosen as the dielectric material for the carrier plate, which has good thermal conductivity (1.7 W / cm. K) and a coefficient of thermal expansion similar to silicon as the substrate material.

Die Trägerplatte wird gut wärmeleitend auf der Wärmesenke befestigt, z.B. durch Weichlöten. Die Abschlußfolie, die Wandungen des zylindrischen Lochs L in der Wärmesenke und die der Wärmesenke zugewandte Seite der Trägerplatte mit den Wandungen des Durchbruchs K bilden als elektrisch gut leitend miteinander verbundene Flächen den Hohlraumresonator dessen Resonanzfrequenz zumindest annähernd mit der Resonanzfrequenz der Oszillatoranordnung auf dem Substrat übereinstimmt. Innerhalb des Ziehbereichs der Oszillatoranordnung kann die Betriebsfrequenz durch den Hohlraumresonator abgestimmt und stabilisiert werden.The carrier plate is attached to the heat sink with good thermal conductivity, e.g. by soft soldering. The closing film, the walls of the cylindrical hole L in the heat sink and the side of the carrier plate facing the heat sink with the walls of the opening K form, as electrically well-connected surfaces, the cavity resonator whose resonance frequency at least approximately matches the resonance frequency of the oscillator arrangement on the substrate. The operating frequency can be tuned and stabilized by the cavity resonator within the pulling range of the oscillator arrangement.

Die Abstrahlung der Sendeleistung erfolgt primär durch das Substrat, was durch die "upside down"-Anordnung bei der Erfindung weiter begünstigt wird. Außerdem wird durch diese Anordnung in Verbindung mit dem Durchbruch durch die Trägerplatte eine definierte Ankopplung an den Hohlraumresonator gewährleistet. Insbesondere ist die Anordnung günstig für die Abfuhr der Verlustleistung durch den kurzen Weg zu der wärmeableitenden Trägerplatte, die auch als Teil einer mehrteiligen Wärmesenke T, W, F betrachtet werden kann. Die der Trägerplatte abgewandte Seite kann zur Strahlformung und/oder Polarisationseinstellung geometrisch strukturiert werden, z.B. durch ein Relief oder eine strukturierte Schicht.The transmission power is emitted primarily through the substrate, which is further favored by the "upside down" arrangement in the invention. In addition, this arrangement in conjunction with the opening through the carrier plate ensures a defined coupling to the cavity resonator. In particular, the arrangement is favorable for the dissipation of the power loss due to the short Path to the heat-dissipating carrier plate, which can also be viewed as part of a multi-part heat sink T, W, F. The side facing away from the carrier plate can be geometrically structured for beam shaping and / or polarization adjustment, for example by means of a relief or a structured layer.

Für eine auf einem Siliziumsubstrat realisierte Oszillatoranordnung für eine Betriebsfrequenz im Frequenzbereich zwischen 60 GHz und 80 GHz wurde eine Trägerplatte aus AlN mit einer Plattendicke zwischen 0,1 mm und 0,5 mm, einer Tiefe des Hohlraumresonators von ca. 3 mm und einer 0,1 mm dicken Goldfolie als Abschlußfolie gewählt.For an oscillator arrangement realized on a silicon substrate for an operating frequency in the frequency range between 60 GHz and 80 GHz, a carrier plate made of AlN with a plate thickness between 0.1 mm and 0.5 mm, a depth of the cavity resonator of approx. 3 mm and a 0, 1 mm thick gold foil chosen as the final foil.

Der Grundgedanke der Erfindung ist prinzipiell nicht auf den Frequenzbereich der mm-Wellen beschränkt.The basic idea of the invention is in principle not limited to the frequency range of the mm waves.

Claims (7)

Anordnung zur Abstrahlung von Millimeterwellen mit einem aktiven Halbleiterbauelement auf einem Substrat, einem Antennenelement und einem Hohlraumresonator, gekennzeichnet durch die folgenden Merkmale: a) der Hohlraumresonator ist in einer Wärmesenke ausgebildet b) die das Halbleiterbauelement tragende Seite des Substrats ist dem Resonator zugewandt c) zwischen dem Substrat, und der Wärmesenke ist eine Trägerplatte aus gut wärmeleitendem Material angeordnet d) Substrat, Platte und Wärmesenke sind gut wärmeleitend miteinander verbunden. Arrangement for emitting millimeter waves with an active semiconductor component on a substrate, an antenna element and a cavity resonator, characterized by the following features: a) the cavity resonator is formed in a heat sink b) the side of the substrate carrying the semiconductor component faces the resonator c) between the substrate and the heat sink, a carrier plate made of a good heat-conducting material is arranged d) The substrate, plate and heat sink are connected to one another with good thermal conductivity. Anordnung nach Anspruch 1, dadurch gekennzeichnet, daß die Trägerplatte einen Durchbruch zwischen Antennenelement und Hohlraumresonator aufweist.Arrangement according to claim 1, characterized in that the carrier plate has a breakthrough between the antenna element and the cavity resonator. Anordnung nach Anspruch 2, dadurch gekennzeichnet, daß die Wandungen des Durchbruchs und die dem Resonator zugewandte Seite der Trägerplatte durchgehend elektrisch leitend sind.Arrangement according to claim 2, characterized in that the walls of the opening and the side of the carrier plate facing the resonator are continuously electrically conductive. Anordnung nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß die Wärmeleitfähigkeit des Materials der Trägerplatte > 1 W/cm.K ist.Arrangement according to one of claims 1 to 3, characterized in that the thermal conductivity of the material of the carrier plate is> 1 W / cm.K. Anordnung nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß die Wärmeleitfähigkeit des Materials der Trägerplatte größer ist als die des Substratmaterials.Arrangement according to one of claims 1 to 4, characterized in that the thermal conductivity of the material of the carrier plate is greater than that of the substrate material. Anordnung nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß die Wärmesenke eine Platte mit einem zylindrischen Durchgangsloch ist, das auf der der Trägerplatte abgewandten Seite durch eine elektrisch leitende Abschlußfolie abgeschlossen ist.Arrangement according to one of claims 1 to 5, characterized in that the heat sink is a plate with a cylindrical through hole, which is closed off on the side facing away from the carrier plate by an electrically conductive closure film. Anordnung nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß das Substrat eine IMPATT-Diode und eine integrierte Schlitzantenne enthält.Arrangement according to one of claims 1 to 6, characterized in that the substrate contains an IMPATT diode and an integrated slot antenna.
EP94115637A 1993-10-15 1994-10-05 Arrangement for the radiation of millimeter waves Expired - Lifetime EP0649184B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4335232 1993-10-15
DE4335232A DE4335232A1 (en) 1993-10-15 1993-10-15 Arrangement for the emission of millimeter waves

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EP0649184A2 true EP0649184A2 (en) 1995-04-19
EP0649184A3 EP0649184A3 (en) 1995-06-28
EP0649184B1 EP0649184B1 (en) 1998-12-30

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EP94115637A Expired - Lifetime EP0649184B1 (en) 1993-10-15 1994-10-05 Arrangement for the radiation of millimeter waves

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CA (1) CA2117839C (en)
DE (2) DE4335232A1 (en)

Cited By (1)

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EP0765001A1 (en) * 1995-09-19 1997-03-26 Murata Manufacturing Co., Ltd. Chip antenna

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CN110859981A (en) * 2019-12-23 2020-03-06 湖州拉杜拉塔服饰有限公司 Disinfection and sterilization treatment method for finished children's garment
CN111184879B (en) * 2020-03-05 2021-04-23 南京中铭瑞邦动力科技有限公司 High-temperature and high-speed air decontamination device and decontamination method

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Also Published As

Publication number Publication date
EP0649184A3 (en) 1995-06-28
CA2117839A1 (en) 1995-04-16
EP0649184B1 (en) 1998-12-30
CA2117839C (en) 2004-05-25
DE59407555D1 (en) 1999-02-11
DE4335232A1 (en) 1995-04-20

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