DE69934909D1 - Substrate based on a silicon nitride complex - Google Patents

Substrate based on a silicon nitride complex

Info

Publication number
DE69934909D1
DE69934909D1 DE69934909T DE69934909T DE69934909D1 DE 69934909 D1 DE69934909 D1 DE 69934909D1 DE 69934909 T DE69934909 T DE 69934909T DE 69934909 T DE69934909 T DE 69934909T DE 69934909 D1 DE69934909 D1 DE 69934909D1
Authority
DE
Germany
Prior art keywords
silicon nitride
substrate based
nitride complex
complex
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69934909T
Other languages
German (de)
Other versions
DE69934909T2 (en
Inventor
Ai Itoh
Michimasa Miyanaga
Masashi Yoshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69934909D1 publication Critical patent/DE69934909D1/en
Application granted granted Critical
Publication of DE69934909T2 publication Critical patent/DE69934909T2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/66—Forming laminates or joined articles showing high dimensional accuracy, e.g. indicated by the warpage
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/74—Forming laminates or joined articles comprising at least two different interlayers separated by a substrate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/76—Forming laminates or joined articles comprising at least one member in the form other than a sheet or disc, e.g. two tubes or a tube and a sheet or disc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Structure Of Printed Boards (AREA)
DE69934909T 1998-10-28 1999-10-25 Substrate based on a silicon nitride complex Expired - Lifetime DE69934909T2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP30649798 1998-10-28
JP10306497A JP2000128654A (en) 1998-10-28 1998-10-28 Silicon nitride composite substrate
PCT/JP1999/005910 WO2000024692A1 (en) 1998-10-28 1999-10-25 Silicon nitride composite substrate

Publications (2)

Publication Number Publication Date
DE69934909D1 true DE69934909D1 (en) 2007-03-08
DE69934909T2 DE69934909T2 (en) 2007-07-05

Family

ID=17957746

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69934909T Expired - Lifetime DE69934909T2 (en) 1998-10-28 1999-10-25 Substrate based on a silicon nitride complex

Country Status (5)

Country Link
US (1) US6599637B1 (en)
EP (1) EP1142849B1 (en)
JP (1) JP2000128654A (en)
DE (1) DE69934909T2 (en)
WO (1) WO2000024692A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4571728B2 (en) * 1999-06-23 2010-10-27 日本碍子株式会社 Silicon nitride sintered body and manufacturing method thereof
JP2002029851A (en) * 2000-07-17 2002-01-29 Denki Kagaku Kogyo Kk Silicon nitride composition, method for manufacturing sintered silicon nitride compact using the same and sintered silicon nitride compact
JP2002029850A (en) * 2000-07-17 2002-01-29 Denki Kagaku Kogyo Kk Sintered silicon nitride compact and method for manufacturing the same
US6958535B2 (en) * 2000-09-22 2005-10-25 Matsushita Electric Industrial Co., Ltd. Thermal conductive substrate and semiconductor module using the same
JP4828696B2 (en) * 2000-12-27 2011-11-30 株式会社東芝 Thermoelectric module substrate and thermoelectric module using the same
JP4454191B2 (en) * 2001-07-30 2010-04-21 日本特殊陶業株式会社 Manufacturing method of ceramic heater
JP4483161B2 (en) 2002-08-13 2010-06-16 住友電気工業株式会社 Aluminum nitride sintered body, metallized substrate, heater, jig, and method of manufacturing aluminum nitride sintered body
JP4869070B2 (en) * 2004-05-20 2012-02-01 株式会社東芝 High thermal conductivity silicon nitride sintered body and silicon nitride structural member
JP4756165B2 (en) * 2004-08-26 2011-08-24 Ｄｏｗａメタルテック株式会社 Aluminum-ceramic bonding substrate
WO2009060902A1 (en) 2007-11-06 2009-05-14 Mitsubishi Materials Corporation Ceramic substrate, method for producing ceramic substrate, and method for producing substrate for power module
US7948075B2 (en) 2008-03-10 2011-05-24 Hitachi Metals, Ltd. Silicon nitride substrate, method of manufacturing the same, and silicon nitride circuit board and semiconductor module using the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150453A (en) * 1982-12-23 1984-08-28 Toshiba Corp Manufacture of substrate for seiconductor module
JPH0699191B2 (en) * 1984-12-22 1994-12-07 京セラ株式会社 Method for manufacturing silicon nitride sintered body
US5439856A (en) * 1992-09-08 1995-08-08 Kabushiki Kaisha Toshiba High thermal conductive silicon nitride sintered body and method of producing the same
EP0766307B1 (en) 1995-03-20 2007-08-08 Kabushiki Kaisha Toshiba Silicon nitride circuit board
US5928768A (en) * 1995-03-20 1999-07-27 Kabushiki Kaisha Toshiba Silicon nitride circuit board
JPH09153567A (en) * 1995-09-28 1997-06-10 Toshiba Corp Heat conductive silicon nitride circuit board and semiconductor device
JP3629783B2 (en) 1995-12-07 2005-03-16 電気化学工業株式会社 Circuit board
EP0874399A1 (en) * 1996-08-20 1998-10-28 Kabushiki Kaisha Toshiba Silicon nitride circuit board and semiconductor module
JPH1093211A (en) 1996-09-17 1998-04-10 Toshiba Corp Silicon nitride circuit board
JP3722573B2 (en) * 1996-12-11 2005-11-30 電気化学工業株式会社 Ceramic substrate, circuit board using the same, and manufacturing method thereof
WO1999011583A1 (en) 1997-09-03 1999-03-11 Sumitomo Electric Industries, Ltd. Silicon nitride sinter having high thermal conductivity and process for preparing the same

Also Published As

Publication number Publication date
EP1142849B1 (en) 2007-01-17
WO2000024692A1 (en) 2000-05-04
DE69934909T2 (en) 2007-07-05
EP1142849A1 (en) 2001-10-10
US6599637B1 (en) 2003-07-29
JP2000128654A (en) 2000-05-09
EP1142849A4 (en) 2004-11-10

Similar Documents

Publication Publication Date Title
DE60021464D1 (en) Substrate based on silicon with a thermal barrier coating
FR2776128B1 (en) INDUCTANCE DEVICE FORMED ON A SEMICONDUCTOR SUBSTRATE
ID22434A (en) THE ESTABLISHMENT OF A CRYSTALLIN SEMICONDUCTOR FILM ON THE GLASS SUBSTRATE
DE69531390D1 (en) Substrate, semiconductor device, assembly for element mounting
DE69838313D1 (en) Optoelectronic semiconductor device based on a group III nitride compound
FR2803103B1 (en) SCHOTTKY DIODE ON SILICON CARBIDE SUBSTRATE
FR2800731B1 (en) TRANSPARENT SUBSTRATE HAVING A SILICON-DERIVED LAYER
DE69923337D1 (en) SOLDERING A SEMICONDUCTOR CHIP ON A SUBSTRATE
FR2787440B1 (en) TRANSPARENT SUBSTRATE HAVING AN ANTI-REFLECTIVE COATING
FI20000900A (en) A method for growing a thin film on a substrate
FI20001694A0 (en) A method for growing a thin film on a substrate
DE60114495D1 (en) Environmental / thermal barrier for a silicon-based substrate
DE59906104D1 (en) Position coordinate measuring device for measuring structures on a transparent substrate
IT1314296B1 (en) RESISTIVE STRUCTURE INTEGRATED ON A SEMICONDUCTIVE SUBSTRATE
AU2002232418A1 (en) Semiconductor compliant substrate having a graded monocrystalline layer
DE69934909D1 (en) Substrate based on a silicon nitride complex
DE69942327D1 (en) Silicon single crystal integrated circuits on polycrystalline silicon
DE60040320D1 (en) Substrate rotation device
AU2002227030A1 (en) Pyroelectric device on a monocrystalline semiconductor substrate
DK1068139T3 (en) Carrier Substrate
FR2825719B1 (en) DEVICE FOR REMOVING A COATING ON A FLAT SUBSTRATE
ID19642A (en) SUBSTRATE PROVIDED WITH A POLYCHRISTALIN INTAN LAYER
FR2797716B1 (en) SEMICONDUCTOR DEVICE ON SOI SUBSTRATE
DK1096549T3 (en) Substrate holding devices
DE60118268D1 (en) Contact pin mounted on a substrate

Legal Events

Date Code Title Description
8364 No opposition during term of opposition