DE69722914D1 - Speicher - Google Patents

Speicher

Info

Publication number
DE69722914D1
DE69722914D1 DE69722914T DE69722914T DE69722914D1 DE 69722914 D1 DE69722914 D1 DE 69722914D1 DE 69722914 T DE69722914 T DE 69722914T DE 69722914 T DE69722914 T DE 69722914T DE 69722914 D1 DE69722914 D1 DE 69722914D1
Authority
DE
Germany
Prior art keywords
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69722914T
Other languages
English (en)
Other versions
DE69722914T2 (de
Inventor
Atushi Takasugi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lapis Semiconductor Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Publication of DE69722914D1 publication Critical patent/DE69722914D1/de
Application granted granted Critical
Publication of DE69722914T2 publication Critical patent/DE69722914T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Dram (AREA)
  • Image Input (AREA)
DE69722914T 1996-10-30 1997-10-30 Speicher Expired - Lifetime DE69722914T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP28860396 1996-10-30
JP28860396A JP3706212B2 (ja) 1996-10-30 1996-10-30 メモリ装置
PCT/JP1997/003954 WO1998019309A1 (fr) 1996-10-30 1997-10-30 Memoire

Publications (2)

Publication Number Publication Date
DE69722914D1 true DE69722914D1 (de) 2003-07-24
DE69722914T2 DE69722914T2 (de) 2004-05-19

Family

ID=17732375

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69722914T Expired - Lifetime DE69722914T2 (de) 1996-10-30 1997-10-30 Speicher

Country Status (8)

Country Link
US (1) US6009036A (de)
EP (1) EP0872847B1 (de)
JP (1) JP3706212B2 (de)
KR (1) KR100334485B1 (de)
CN (1) CN1124611C (de)
DE (1) DE69722914T2 (de)
TW (1) TW371373B (de)
WO (1) WO1998019309A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6415353B1 (en) 1998-10-01 2002-07-02 Monolithic System Technology, Inc. Read/write buffers for complete hiding of the refresh of a semiconductor memory and method of operating same
US5999474A (en) 1998-10-01 1999-12-07 Monolithic System Tech Inc Method and apparatus for complete hiding of the refresh of a semiconductor memory
US6504780B2 (en) 1998-10-01 2003-01-07 Monolithic System Technology, Inc. Method and apparatus for completely hiding refresh operations in a dram device using clock division
US6898140B2 (en) 1998-10-01 2005-05-24 Monolithic System Technology, Inc. Method and apparatus for temperature adaptive refresh in 1T-SRAM compatible memory using the subthreshold characteristics of MOSFET transistors
US6707743B2 (en) 1998-10-01 2004-03-16 Monolithic System Technology, Inc. Method and apparatus for completely hiding refresh operations in a DRAM device using multiple clock division
JP3797810B2 (ja) * 1998-11-30 2006-07-19 松下電器産業株式会社 半導体装置
JP3618241B2 (ja) * 1999-02-02 2005-02-09 松下電器産業株式会社 半導体記憶装置
JP3492268B2 (ja) * 2000-01-18 2004-02-03 日本電気株式会社 半導体記憶装置
KR100513365B1 (ko) * 2002-12-30 2005-09-07 주식회사 하이닉스반도체 어드레스 카운터 스트로브 테스트 모드 장치
US7511713B2 (en) * 2004-03-02 2009-03-31 Ittiam Systems (P) Ltd. Method and apparatus for high rate concurrent read-write applications
US7221613B2 (en) * 2004-05-26 2007-05-22 Freescale Semiconductor, Inc. Memory with serial input/output terminals for address and data and method therefor
WO2008109172A1 (en) * 2007-03-07 2008-09-12 Wiklof Christopher A Recorder with retrospective capture
US10847184B2 (en) 2007-03-07 2020-11-24 Knapp Investment Company Limited Method and apparatus for initiating a live video stream transmission
CN111599391B (zh) * 2020-05-25 2022-03-22 无锡中微亿芯有限公司 基于动态可重配技术的可扩展多端口块状存储单元

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2919166C2 (de) * 1978-05-12 1986-01-02 Nippon Electric Co., Ltd., Tokio/Tokyo Speichervorrichtung
US4562435A (en) * 1982-09-29 1985-12-31 Texas Instruments Incorporated Video display system using serial/parallel access memories
KR960001106B1 (ko) * 1986-12-17 1996-01-18 가부시기가이샤 히다찌세이사꾸쇼 반도체 메모리
JPS63261598A (ja) * 1987-04-20 1988-10-28 Hitachi Ltd 半導体メモリ
JPH05210971A (ja) * 1992-01-31 1993-08-20 Matsushita Electric Ind Co Ltd マルチポートメモリ
JPH05225774A (ja) * 1992-02-13 1993-09-03 Mitsubishi Electric Corp マルチポート半導体記憶装置

Also Published As

Publication number Publication date
JP3706212B2 (ja) 2005-10-12
WO1998019309A1 (fr) 1998-05-07
EP0872847A4 (de) 1999-01-13
EP0872847B1 (de) 2003-06-18
CN1124611C (zh) 2003-10-15
CN1206489A (zh) 1999-01-27
JPH10134562A (ja) 1998-05-22
TW371373B (en) 1999-10-01
DE69722914T2 (de) 2004-05-19
KR19990076912A (ko) 1999-10-25
KR100334485B1 (ko) 2002-07-18
US6009036A (en) 1999-12-28
EP0872847A1 (de) 1998-10-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: OKI SEMICONDUCTOR CO.,LTD., TOKYO, JP