DE69515140T2 - Planarisierung in der Herstellung von Anordnungen - Google Patents

Planarisierung in der Herstellung von Anordnungen

Info

Publication number
DE69515140T2
DE69515140T2 DE69515140T DE69515140T DE69515140T2 DE 69515140 T2 DE69515140 T2 DE 69515140T2 DE 69515140 T DE69515140 T DE 69515140T DE 69515140 T DE69515140 T DE 69515140T DE 69515140 T2 DE69515140 T2 DE 69515140T2
Authority
DE
Germany
Prior art keywords
planarization
creation
arrangements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69515140T
Other languages
English (en)
Other versions
DE69515140D1 (de
Inventor
Judith Ann Prybyla
Gary Newton Taylor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69515140D1 publication Critical patent/DE69515140D1/de
Application granted granted Critical
Publication of DE69515140T2 publication Critical patent/DE69515140T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
DE69515140T 1994-05-18 1995-05-10 Planarisierung in der Herstellung von Anordnungen Expired - Fee Related DE69515140T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24527994A 1994-05-18 1994-05-18

Publications (2)

Publication Number Publication Date
DE69515140D1 DE69515140D1 (de) 2000-03-30
DE69515140T2 true DE69515140T2 (de) 2000-08-31

Family

ID=22926037

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69515140T Expired - Fee Related DE69515140T2 (de) 1994-05-18 1995-05-10 Planarisierung in der Herstellung von Anordnungen

Country Status (4)

Country Link
EP (1) EP0683511B1 (de)
JP (1) JPH0888169A (de)
KR (1) KR100374915B1 (de)
DE (1) DE69515140T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10332112A1 (de) * 2003-07-09 2005-01-27 Carl Zeiss Smt Ag Projektionsbelichtungsverfahren und Projektionsbelichtungssystem

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5967030A (en) 1995-11-17 1999-10-19 Micron Technology, Inc. Global planarization method and apparatus
US6331488B1 (en) 1997-05-23 2001-12-18 Micron Technology, Inc. Planarization process for semiconductor substrates
US6316363B1 (en) 1999-09-02 2001-11-13 Micron Technology, Inc. Deadhesion method and mechanism for wafer processing
US5932045A (en) * 1997-06-02 1999-08-03 Lucent Technologies Inc. Method for fabricating a multilayer optical article
US6036586A (en) 1998-07-29 2000-03-14 Micron Technology, Inc. Apparatus and method for reducing removal forces for CMP pads
US6218316B1 (en) 1998-10-22 2001-04-17 Micron Technology, Inc. Planarization of non-planar surfaces in device fabrication
US6518172B1 (en) 2000-08-29 2003-02-11 Micron Technology, Inc. Method for applying uniform pressurized film across wafer
JP3927768B2 (ja) * 2000-11-17 2007-06-13 松下電器産業株式会社 半導体装置の製造方法
US6721076B2 (en) 2001-08-03 2004-04-13 Inphase Technologies, Inc. System and method for reflective holographic storage with associated multiplexing techniques
US7112359B2 (en) 2001-08-22 2006-09-26 Inphase Technologies, Inc. Method and apparatus for multilayer optical articles
US7001541B2 (en) 2001-09-14 2006-02-21 Inphase Technologies, Inc. Method for forming multiply patterned optical articles
US6825960B2 (en) 2002-01-15 2004-11-30 Inphase Technologies, Inc. System and method for bitwise readout holographic ROM
US7455955B2 (en) * 2002-02-27 2008-11-25 Brewer Science Inc. Planarization method for multi-layer lithography processing
US7790231B2 (en) 2003-07-10 2010-09-07 Brewer Science Inc. Automated process and apparatus for planarization of topographical surfaces
JP4801584B2 (ja) * 2003-07-10 2011-10-26 ブルーワー サイエンス アイ エヌ シー． トポグラフィカル表面を平坦化するための自動処理方法と装置
US7775785B2 (en) 2006-12-20 2010-08-17 Brewer Science Inc. Contact planarization apparatus
CN102089708A (zh) * 2008-06-09 2011-06-08 得克萨斯州大学系统董事会 适应性纳米形貌雕刻

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2033287A (en) 1934-06-30 1936-03-10 Bell Telephone Labor Inc Switching device
US4689289A (en) 1986-04-30 1987-08-25 General Electric Company Block polymer compositions
JPH0770527B2 (ja) * 1987-02-27 1995-07-31 アメリカン テレフォン アンド テレグラフ カムパニー デバイス作製方法
US4882201A (en) 1988-03-21 1989-11-21 General Electric Company Non-toxic aryl onium salts, UV curable coating compositions and food packaging use
GB9321900D0 (en) * 1993-10-23 1993-12-15 Dobson Christopher D Method and apparatus for the treatment of semiconductor substrates

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10332112A1 (de) * 2003-07-09 2005-01-27 Carl Zeiss Smt Ag Projektionsbelichtungsverfahren und Projektionsbelichtungssystem

Also Published As

Publication number Publication date
JPH0888169A (ja) 1996-04-02
EP0683511A2 (de) 1995-11-22
KR100374915B1 (ko) 2003-05-09
EP0683511B1 (de) 2000-02-23
DE69515140D1 (de) 2000-03-30
EP0683511A3 (de) 1996-05-01
KR950034598A (ko) 1995-12-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee