DE69218388T2 - Supraleitendes Bauelement mit extrem dünnem Kanal aus supraleitendem Oxyd und sein Herstellungsverfahren - Google Patents

Supraleitendes Bauelement mit extrem dünnem Kanal aus supraleitendem Oxyd und sein Herstellungsverfahren

Info

Publication number
DE69218388T2
DE69218388T2 DE69218388T DE69218388T DE69218388T2 DE 69218388 T2 DE69218388 T2 DE 69218388T2 DE 69218388 T DE69218388 T DE 69218388T DE 69218388 T DE69218388 T DE 69218388T DE 69218388 T2 DE69218388 T2 DE 69218388T2
Authority
DE
Germany
Prior art keywords
superconducting
manufacturing process
extremely thin
channel made
thin channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69218388T
Other languages
English (en)
Other versions
DE69218388D1 (de
Inventor
Takao Nakamura
Hiroshi Inada
Michitomo Iiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP4351723A external-priority patent/JPH05251775A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69218388D1 publication Critical patent/DE69218388D1/de
Application granted granted Critical
Publication of DE69218388T2 publication Critical patent/DE69218388T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/205—Permanent superconducting devices having three or more electrodes, e.g. transistor-like structures 
    • H10N60/207—Field effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/703—Microelectronic device with superconducting conduction line
DE69218388T 1991-12-10 1992-12-09 Supraleitendes Bauelement mit extrem dünnem Kanal aus supraleitendem Oxyd und sein Herstellungsverfahren Expired - Fee Related DE69218388T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP35018691 1991-12-10
JP35166991 1991-12-12
JP4351723A JPH05251775A (ja) 1991-12-10 1992-12-08 超電導電界効果型素子およびその作製方法

Publications (2)

Publication Number Publication Date
DE69218388D1 DE69218388D1 (de) 1997-04-24
DE69218388T2 true DE69218388T2 (de) 1997-10-23

Family

ID=27341338

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69218388T Expired - Fee Related DE69218388T2 (de) 1991-12-10 1992-12-09 Supraleitendes Bauelement mit extrem dünnem Kanal aus supraleitendem Oxyd und sein Herstellungsverfahren

Country Status (4)

Country Link
US (2) US5447907A (de)
EP (1) EP0551033B1 (de)
CA (1) CA2084983C (de)
DE (1) DE69218388T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251776A (ja) * 1991-12-13 1993-09-28 Sumitomo Electric Ind Ltd 超電導素子およびその作製方法
DE69502444T2 (de) * 1994-07-04 1999-01-28 Sumitomo Electric Industries Supraleitendes Bauelement mit einem supraleitenden Kanal aus supraleitendem Oxidmaterial
KR0148598B1 (ko) * 1994-11-21 1998-10-15 정선종 두꺼운 초전도채널층을 구비한 고온초전도 전계효과 트랜지스터의 제조방법
EP0790655B1 (de) * 1995-09-29 1999-04-14 Sumitomo Electric Industries, Limited Supraleitende Feldeffektanordnung mit supraleitendem Kanal und Verfahren zur Herstellung
KR100194621B1 (ko) * 1995-12-21 1999-07-01 정선종 고온초전도 전계효과 소자 및 그 제조방법
US6660598B2 (en) * 2002-02-26 2003-12-09 International Business Machines Corporation Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region
JP2003282981A (ja) * 2002-03-26 2003-10-03 Fujitsu Ltd ジョセフソン接合素子およびその製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060786A (ja) * 1983-09-14 1985-04-08 Nec Corp 超伝導回路装置の製造方法
KR910002311B1 (ko) * 1987-02-27 1991-04-11 가부시기가이샤 히다찌세이사꾸쇼 초전도 디바이스
JPH01101670A (ja) * 1987-10-15 1989-04-19 Sumitomo Electric Ind Ltd 電界効果トランジスタの製造方法
JPH01101676A (ja) * 1987-10-15 1989-04-19 Mitsubishi Electric Corp 超伝導トランジスタ
DE3888341T2 (de) * 1987-12-26 1994-09-01 Sumitomo Electric Industries Halbleitersubstrat mit einem supraleitenden Dünnfilm.
DE3876228T2 (de) * 1988-01-15 1993-06-03 Ibm Feldeffektanordnung mit supraleitendem kanal.
JP2646440B2 (ja) * 1988-09-20 1997-08-27 富士通株式会社 ジョセフソン接合素子の製造方法
CA2051778C (en) * 1990-09-19 1997-05-06 Takao Nakamura Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
US5236896A (en) * 1990-10-08 1993-08-17 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
CA2054470C (en) * 1990-10-30 1997-07-01 Takao Nakamura Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby
EP0502787B1 (de) * 1991-03-04 1996-08-14 Sumitomo Electric Industries, Ltd. Supraleitende oxydische Dünnschicht mit lokal unterschiedlichen Kristallorientierungen und ein Verfahren zu deren Herstellung
US5196395A (en) * 1991-03-04 1993-03-23 Superconductor Technologies, Inc. Method for producing crystallographic boundary junctions in oxide superconducting thin films
JPH04300292A (ja) * 1991-03-26 1992-10-23 Sumitomo Electric Ind Ltd 複合酸化物超電導薄膜の成膜方法
US5399546A (en) * 1991-11-30 1995-03-21 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
US5274249A (en) * 1991-12-20 1993-12-28 University Of Maryland Superconducting field effect devices with thin channel layer

Also Published As

Publication number Publication date
US5447907A (en) 1995-09-05
CA2084983A1 (en) 1993-06-11
EP0551033B1 (de) 1997-03-19
US5509183A (en) 1996-04-23
DE69218388D1 (de) 1997-04-24
EP0551033A1 (de) 1993-07-14
CA2084983C (en) 1996-11-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee