DE69131658T2 - Licht- oder strahlungsempfindliche Zusammensetzung - Google Patents

Licht- oder strahlungsempfindliche Zusammensetzung

Info

Publication number
DE69131658T2
DE69131658T2 DE69131658T DE69131658T DE69131658T2 DE 69131658 T2 DE69131658 T2 DE 69131658T2 DE 69131658 T DE69131658 T DE 69131658T DE 69131658 T DE69131658 T DE 69131658T DE 69131658 T2 DE69131658 T2 DE 69131658T2
Authority
DE
Germany
Prior art keywords
radiation
light
composition sensitive
sensitive
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69131658T
Other languages
English (en)
Other versions
DE69131658D1 (de
Inventor
Hisashi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of DE69131658D1 publication Critical patent/DE69131658D1/de
Publication of DE69131658T2 publication Critical patent/DE69131658T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/117—Free radical
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/126—Halogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/128—Radiation-activated cross-linking agent containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69131658T 1990-06-25 1991-06-25 Licht- oder strahlungsempfindliche Zusammensetzung Expired - Fee Related DE69131658T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16717390 1990-06-25

Publications (2)

Publication Number Publication Date
DE69131658D1 DE69131658D1 (de) 1999-11-04
DE69131658T2 true DE69131658T2 (de) 2000-04-27

Family

ID=15844774

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69131658T Expired - Fee Related DE69131658T2 (de) 1990-06-25 1991-06-25 Licht- oder strahlungsempfindliche Zusammensetzung

Country Status (4)

Country Link
US (3) US5378585A (de)
EP (1) EP0464614B1 (de)
KR (1) KR950002874B1 (de)
DE (1) DE69131658T2 (de)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69131658T2 (de) * 1990-06-25 2000-04-27 Matsushita Electronics Corp Licht- oder strahlungsempfindliche Zusammensetzung
JP2934353B2 (ja) * 1992-06-24 1999-08-16 三菱電機株式会社 半導体装置およびその製造方法
TW434458B (en) * 1995-04-04 2001-05-16 Shinetsu Chemical Co Chemically amplified positive resist compositions
JP2697680B2 (ja) * 1995-05-31 1998-01-14 日本電気株式会社 珪素含有高分子化合物および感光性樹脂組成物
KR970011972A (ko) * 1995-08-11 1997-03-29 쯔지 하루오 투과형 액정 표시 장치 및 그 제조 방법
JPH1160735A (ja) * 1996-12-09 1999-03-05 Toshiba Corp ポリシランおよびパターン形成方法
JP3976350B2 (ja) * 1997-03-14 2007-09-19 スリーエム カンパニー 反応性シラン官能性を有する要求に応じて硬化する、湿分硬化性組成物
KR100573560B1 (ko) * 1997-10-30 2006-08-30 가오가부시끼가이샤 레지스트용현상액
JP3796982B2 (ja) * 1998-06-02 2006-07-12 住友化学株式会社 ポジ型レジスト組成物
US6087064A (en) 1998-09-03 2000-07-11 International Business Machines Corporation Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method
JP3120402B2 (ja) 1998-09-03 2000-12-25 インターナショナル・ビジネス・マシーンズ・コーポレ−ション 不活性化芳香族アミン化合物を含むフォトレジスト組成物
TWI221946B (en) 1999-01-07 2004-10-11 Kao Corp Resist developer
US6136511A (en) * 1999-01-20 2000-10-24 Micron Technology, Inc. Method of patterning substrates using multilayer resist processing
TW497165B (en) 1999-06-30 2002-08-01 Hitachi Ltd Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
US6361904B1 (en) 2000-06-14 2002-03-26 Taiwan Semiconductor Manufacturing Company Method for repairing the shifter layer of an alternating phase shift mask
US6420084B1 (en) 2000-06-23 2002-07-16 International Business Machines Corporation Mask-making using resist having SIO bond-containing polymer
TW541605B (en) * 2000-07-07 2003-07-11 Hitachi Ltd Fabrication method of semiconductor integrated circuit device
JP3760086B2 (ja) * 2000-07-07 2006-03-29 株式会社ルネサステクノロジ フォトマスクの製造方法
JP2002184669A (ja) 2000-12-14 2002-06-28 Hitachi Ltd 半導体集積回路装置の製造方法
JP2002196470A (ja) 2000-12-26 2002-07-12 Hitachi Ltd フォトマスクの製造方法および半導体集積回路装置の製造方法
JP2002202585A (ja) 2000-12-27 2002-07-19 Hitachi Ltd フォトマスクの製造方法および半導体集積回路装置の製造方法
US6617674B2 (en) 2001-02-20 2003-09-09 Dow Corning Corporation Semiconductor package and method of preparing same
EP1364917A4 (de) * 2001-03-01 2006-03-15 Nippon Sheet Glass Co Ltd Verfahren zur herstellung optischer elemente
US6731857B2 (en) 2001-03-29 2004-05-04 Shipley Company, L.L.C. Photodefinable composition, method of manufacturing an optical waveguide with the photodefinable composition, and optical waveguide formed therefrom
US6589711B1 (en) * 2001-04-04 2003-07-08 Advanced Micro Devices, Inc. Dual inlaid process using a bilayer resist
TW594416B (en) * 2001-05-08 2004-06-21 Shipley Co Llc Photoimageable composition
JP3827544B2 (ja) 2001-08-31 2006-09-27 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2003121977A (ja) * 2001-10-12 2003-04-23 Hitachi Ltd 半導体集積回路装置の製造方法およびマスク
JP2003287875A (ja) * 2002-01-24 2003-10-10 Hitachi Ltd マスクの製造方法および半導体集積回路装置の製造方法
JP3754378B2 (ja) * 2002-02-14 2006-03-08 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2004038142A (ja) 2002-03-03 2004-02-05 Shipley Co Llc ポリシロキサンを製造する方法及びそれを含むフォトレジスト組成物
JP4557497B2 (ja) * 2002-03-03 2010-10-06 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． シランモノマー及びポリマーを製造する方法及びそれを含むフォトレジスト組成物
US7189490B2 (en) * 2002-10-21 2007-03-13 Shipley Company, L.L.C. Photoresists containing sulfonamide component
JP2004206082A (ja) * 2002-11-20 2004-07-22 Rohm & Haas Electronic Materials Llc 多層フォトレジスト系
JP2004177952A (ja) * 2002-11-20 2004-06-24 Rohm & Haas Electronic Materials Llc 多層フォトレジスト系
US6842577B2 (en) * 2002-12-02 2005-01-11 Shipley Company L.L.C. Photoimageable waveguide composition and waveguide formed therefrom
EP1434068A3 (de) * 2002-12-02 2004-07-28 Shipley Company, L.L.C. Herstellungsmethoden von Lichtwellenleitern mit runden Querschnitten und Lichtwellenleitern die nach diesen Methoden hergestellt werden
US20040229159A1 (en) * 2003-02-23 2004-11-18 Subbareddy Kanagasabapathy Fluorinated Si-polymers and photoresists comprising same
EP1455230A3 (de) * 2003-03-03 2004-12-01 Rohm and Haas Electronic Materials, L.L.C. Polymere und diese enthaltende Fotoresiste
US7072564B2 (en) * 2003-11-25 2006-07-04 Rohm And Haas Electronic Materials Llc Waveguide compositions and waveguides formed therefrom
JP5102428B2 (ja) * 2003-11-25 2012-12-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 導波路組成物およびこれから形成された導波路
DE602005014984D1 (de) * 2004-04-14 2009-07-30 Rohm & Haas Elect Mat Zusammensetzungen für Wellenleiter und daraus hergestellte Wellenleiter
KR100593042B1 (ko) 2004-09-07 2006-06-26 안성화인케미칼 주식회사 고개구율 액정표시소자의 유기절연막 형성용 음성레지스트 조성물
US7659050B2 (en) * 2005-06-07 2010-02-09 International Business Machines Corporation High resolution silicon-containing resist
JP4699140B2 (ja) * 2005-08-29 2011-06-08 東京応化工業株式会社 パターン形成方法
JP2007211062A (ja) * 2006-02-07 2007-08-23 Tokyo Ohka Kogyo Co Ltd 着色シリカ系被膜形成用組成物
JP4896755B2 (ja) * 2007-02-01 2012-03-14 東京応化工業株式会社 液晶表示素子用平坦化絶縁膜形成用組成物および液晶表示素子用平坦化絶縁膜の製造方法
US7939236B2 (en) * 2007-02-22 2011-05-10 Lexmark International, Inc. Chemically prepared toner and process therefor
US20100255427A1 (en) * 2009-04-02 2010-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Conformal photo-sensitive layer and process
KR102375191B1 (ko) * 2015-01-05 2022-03-17 삼성디스플레이 주식회사 포지티브형 감광성 실록산 수지 조성물 및 이를 포함하는 표시 장치

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3779778A (en) * 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
JPS5760330A (en) * 1980-09-27 1982-04-12 Fujitsu Ltd Resin composition
EP0076656B1 (de) * 1981-10-03 1988-06-01 Japan Synthetic Rubber Co., Ltd. In Lösungsmitteln lösliche Organopolysilsesquioxane, Verfahren zu ihrer Herstellung, Zusammensetzungen und Halbleitervorrichtungen, die diese verwenden
US4442197A (en) * 1982-01-11 1984-04-10 General Electric Company Photocurable compositions
DE3374452D1 (en) * 1982-04-05 1987-12-17 Ibm Method of increasing the image resolution of a transmitting mask and improved masks for performing the method
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JPS5968735A (ja) * 1982-10-13 1984-04-18 Tokyo Ohka Kogyo Co Ltd 感光性組成物
JPS6052845A (ja) * 1983-09-02 1985-03-26 Japan Synthetic Rubber Co Ltd パタ−ン形成材料
JPS61144639A (ja) * 1984-12-19 1986-07-02 Hitachi Ltd 放射線感応性組成物及びそれを用いたパタ−ン形成法
US4759616A (en) * 1985-08-26 1988-07-26 Eastman Kodak Company Method and apparatus for anamorphically shaping and deflecting electromagnetic beams
JPS6259296A (ja) * 1985-09-10 1987-03-14 Green Cross Corp:The ペプタイド誘導体
US4665006A (en) * 1985-12-09 1987-05-12 International Business Machines Corporation Positive resist system having high resistance to oxygen reactive ion etching
DE3760030D1 (en) * 1986-02-07 1989-02-02 Nippon Telegraph & Telephone Photosensitive and high energy beam sensitive resin composition containing substituted polysiloxane
JPS6346094A (ja) * 1986-08-13 1988-02-26 Matsushita Electric Ind Co Ltd 構内電子交換機
JPS63236028A (ja) * 1987-03-25 1988-09-30 Fuji Photo Film Co Ltd 光可溶化組成物
JPS63279245A (ja) * 1987-05-12 1988-11-16 Fujitsu Ltd ネガ型レジスト組成物
JPH07102439B2 (ja) * 1988-07-04 1995-11-08 宇部興産株式会社 ロータリダイカストマシンの回転テーブル駆動制御方法
JP2608429B2 (ja) * 1987-11-09 1997-05-07 東レ・ダウコーニング・シリコーン株式会社 パターン形成用材料およびパターン形成方法
JPH0815650B2 (ja) * 1988-07-04 1996-02-21 宇部興産株式会社 加圧鋳造方法
US5059512A (en) * 1989-10-10 1991-10-22 International Business Machines Corporation Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions
JP2646289B2 (ja) * 1990-06-01 1997-08-27 富士写真フイルム株式会社 レジスト組成物
DE69131658T2 (de) * 1990-06-25 2000-04-27 Matsushita Electronics Corp Licht- oder strahlungsempfindliche Zusammensetzung
DE69300616T2 (de) * 1992-04-30 1996-05-30 Ibm Silikon enthaltendes positives Photoresistmaterial und dessen Verwendung in Dünnfilm-Verpackung-Technologie.

Also Published As

Publication number Publication date
EP0464614A2 (de) 1992-01-08
EP0464614A3 (en) 1992-09-02
US5378585A (en) 1995-01-03
EP0464614B1 (de) 1999-09-29
DE69131658D1 (de) 1999-11-04
US5554465A (en) 1996-09-10
KR950002874B1 (ko) 1995-03-27
US5547808A (en) 1996-08-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA,

8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

8339 Ceased/non-payment of the annual fee