DE69104019D1 - Laser-Vielfachanordnungen. - Google Patents
Laser-Vielfachanordnungen.Info
- Publication number
- DE69104019D1 DE69104019D1 DE69104019T DE69104019T DE69104019D1 DE 69104019 D1 DE69104019 D1 DE 69104019D1 DE 69104019 T DE69104019 T DE 69104019T DE 69104019 T DE69104019 T DE 69104019T DE 69104019 D1 DE69104019 D1 DE 69104019D1
- Authority
- DE
- Germany
- Prior art keywords
- multiple arrangements
- laser multiple
- laser
- arrangements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0615—Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/634,989 US5151915A (en) | 1990-12-27 | 1990-12-27 | Array and method of operating a modulated solid state laser array with reduced thermal crosstalk |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69104019D1 true DE69104019D1 (de) | 1994-10-20 |
DE69104019T2 DE69104019T2 (de) | 1995-04-06 |
Family
ID=24545961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69104019T Expired - Lifetime DE69104019T2 (de) | 1990-12-27 | 1991-12-23 | Laser-Vielfachanordnungen. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5151915A (de) |
EP (1) | EP0493104B1 (de) |
JP (1) | JP3251966B2 (de) |
DE (1) | DE69104019T2 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5267255A (en) * | 1992-02-25 | 1993-11-30 | Xerox Corporation | Array and method of operating a modulated solid state laser array with reduced thermal crosstalk |
US5488619A (en) | 1994-10-06 | 1996-01-30 | Trw Inc. | Ultracompact Q-switched microlasers and related method |
US5608747A (en) * | 1995-04-13 | 1997-03-04 | Eastman Kodak Company | Thermal cross-talk compensating current driver for laser diode array |
US5596593A (en) * | 1996-02-09 | 1997-01-21 | Luxar Corporation | Orthogonal RFDC transverse excited gas laser |
SE9702175D0 (sv) | 1997-06-06 | 1997-06-06 | Geotronics Ab | A laser |
US6526083B1 (en) | 2001-10-09 | 2003-02-25 | Xerox Corporation | Two section blue laser diode with reduced output power droop |
GB2414214B (en) * | 2004-05-19 | 2008-01-09 | Intense Photonics Ltd | Printing with laser activation |
US7948669B1 (en) * | 2008-04-30 | 2011-05-24 | Lockheed Martin Corporation | Methods of optimizing spur-free dynamic range or gain in electro-absorption modulators |
US8259770B2 (en) * | 2009-10-11 | 2012-09-04 | Hewlett-Packard Indigo B.V. | Laser array |
US20130154160A1 (en) * | 2011-12-15 | 2013-06-20 | 3D Systems, Inc. | Stereolithography Systems and Methods Using Internal Laser Modulation |
CN104170298B (zh) * | 2013-03-13 | 2017-05-24 | 索尔思光电(成都)有限公司 | 带绝缘调制器接头和/或输入端的光收发器 |
DE102017208705A1 (de) * | 2017-05-23 | 2018-11-29 | Robert Bosch Gmbh | Sendeeinheit zur Emission von Strahlung in die Umgebung |
DE102017219413B4 (de) * | 2017-10-30 | 2021-11-04 | Robert Bosch Gmbh | Verfahren zum Erzeugen eines Laserpulses |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3768037A (en) * | 1965-11-26 | 1973-10-23 | Hitachi Ltd | Semiconductor diode laser device |
US4558449A (en) * | 1983-07-08 | 1985-12-10 | At&T Bell Laboratories | Semiconductor laser with coupled loss modulator for optical telecommunications |
JPS6155981A (ja) * | 1984-08-27 | 1986-03-20 | Kokusai Denshin Denwa Co Ltd <Kdd> | 半導体発光素子 |
JPS61160987A (ja) * | 1985-01-09 | 1986-07-21 | Nec Corp | 集積型半導体光素子とその製造方法 |
JPS6233489A (ja) * | 1985-08-07 | 1987-02-13 | Kokusai Denshin Denwa Co Ltd <Kdd> | 発光装置 |
EP0547044B1 (de) * | 1986-07-25 | 1995-09-27 | Mitsubishi Denki Kabushiki Kaisha | Halbleiterlaser |
US4802182A (en) * | 1987-11-05 | 1989-01-31 | Xerox Corporation | Monolithic two dimensional waveguide coupled cavity laser/modulator |
US4980893A (en) * | 1989-05-25 | 1990-12-25 | Xerox Corporation | Monolithic high density arrays of independently addressable offset semiconductor laser sources |
US5023878A (en) * | 1989-09-15 | 1991-06-11 | At&T Bell Laboratories | Apparatus comprising a quantum well device and method of operating the apparatus |
-
1990
- 1990-12-27 US US07/634,989 patent/US5151915A/en not_active Expired - Lifetime
-
1991
- 1991-12-23 EP EP91312003A patent/EP0493104B1/de not_active Expired - Lifetime
- 1991-12-23 DE DE69104019T patent/DE69104019T2/de not_active Expired - Lifetime
- 1991-12-25 JP JP34362891A patent/JP3251966B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5151915A (en) | 1992-09-29 |
EP0493104A2 (de) | 1992-07-01 |
EP0493104B1 (de) | 1994-09-14 |
JP3251966B2 (ja) | 2002-01-28 |
JPH0690058A (ja) | 1994-03-29 |
EP0493104A3 (en) | 1992-08-12 |
DE69104019T2 (de) | 1995-04-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |