DE602007009217D1 - Schaltung - Google Patents

Schaltung

Info

Publication number
DE602007009217D1
DE602007009217D1 DE602007009217T DE602007009217T DE602007009217D1 DE 602007009217 D1 DE602007009217 D1 DE 602007009217D1 DE 602007009217 T DE602007009217 T DE 602007009217T DE 602007009217 T DE602007009217 T DE 602007009217T DE 602007009217 D1 DE602007009217 D1 DE 602007009217D1
Authority
DE
Germany
Prior art keywords
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007009217T
Other languages
English (en)
Inventor
Ian Juso Dedic
Darren Walker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Publication of DE602007009217D1 publication Critical patent/DE602007009217D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
    • H03M1/0602—Continuously compensating for, or preventing, undesired influence of physical parameters of deviations from the desired transfer characteristic
    • H03M1/0604—Continuously compensating for, or preventing, undesired influence of physical parameters of deviations from the desired transfer characteristic at one point, i.e. by adjusting a single reference value, e.g. bias or gain error
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0416—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/04166—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66—Digital/analogue converters
    • H03M1/74—Simultaneous conversion
    • H03M1/742—Simultaneous conversion using current sources as quantisation value generators
DE602007009217T 2007-07-27 2007-07-27 Schaltung Active DE602007009217D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP07113379A EP2023487B1 (de) 2007-07-27 2007-07-27 Schaltung

Publications (1)

Publication Number Publication Date
DE602007009217D1 true DE602007009217D1 (de) 2010-10-28

Family

ID=38738817

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007009217T Active DE602007009217D1 (de) 2007-07-27 2007-07-27 Schaltung

Country Status (3)

Country Link
US (1) US7746259B2 (de)
EP (1) EP2023487B1 (de)
DE (1) DE602007009217D1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2019486B1 (de) 2007-07-27 2014-12-10 Fujitsu Semiconductor Limited HF-Sender
US7714652B2 (en) * 2008-04-07 2010-05-11 Semiconductor Components Industries, Llc Method for adjusting threshold voltage and circuit therefor
ATE543259T1 (de) 2009-01-26 2012-02-15 Fujitsu Semiconductor Ltd Abtastung
US20110089994A1 (en) 2009-10-16 2011-04-21 Infineon Technologies Ag Threshold Voltage Modification Via Bulk Voltage Generator
JP5746201B2 (ja) 2009-11-05 2015-07-08 ラムバス・インコーポレーテッド インターフェースクロックマネージメント
US20110140708A1 (en) * 2009-12-11 2011-06-16 William Henry Lueckenbach System, method, and apparatus for providing redundant power control using a digital output module
US7978109B1 (en) * 2010-02-18 2011-07-12 Advantest Corporation Output apparatus and test apparatus
WO2012052623A1 (en) * 2010-10-21 2012-04-26 Aalto University Foundation Field effect transistor current mode logic with changeable bulk configuration of load transistors
US9014867B2 (en) * 2011-09-16 2015-04-21 Varentec, Inc. Systems and methods for edge of network voltage control of a power grid
US10541533B2 (en) 2011-09-16 2020-01-21 Varentec, Inc. Systems and methods for edge of network voltage control of a power grid
US9948100B2 (en) 2011-09-16 2018-04-17 Varentec, Inc. Zero droop voltage control for smart inverters
US9054916B1 (en) * 2012-04-13 2015-06-09 Rambus Inc. Configurable receiver
KR101951940B1 (ko) * 2012-09-27 2019-02-25 엘지디스플레이 주식회사 게이트 쉬프트 레지스터와 이를 포함한 표시장치
JP2014096758A (ja) * 2012-11-12 2014-05-22 Sony Corp 半導体集積回路、電流制御方法、ａｄ変換装置、固体撮像素子、及び、電子機器
TWI499885B (zh) * 2012-11-23 2015-09-11 Realtek Semiconductor Corp 固定電流產生電路及相關的固定電流產生方法
US8842026B2 (en) * 2012-12-05 2014-09-23 Infineon Technologies Ag Symbol decoder, threshold estimation and correlation systems and methods
EP2849346B1 (de) 2013-09-12 2019-08-21 Socionext Inc. Schaltungen für gemischte Signalen
US8976050B1 (en) 2013-09-12 2015-03-10 Fujitsu Semiconductor Limited Circuitry and methods for use in mixed-signal circuitry
EP2849022B1 (de) 2013-09-12 2016-05-25 Socionext Inc. Schaltungen, die zur Takterzeugung und Verteilung verwendbar sind
EP2849543B1 (de) 2013-09-12 2021-02-24 Socionext Inc. Bauelemente und Schaltungen zum Abschluss von Ausgängen
US9054722B2 (en) 2013-09-12 2015-06-09 Fujitsu Semiconductor Limited Circuitry and methods for use in mixed-signal circuitry
EP2849345B1 (de) 2013-09-12 2020-11-04 Socionext Inc. Schaltungen und Verfahren zur Verwendung in Schaltungen mit gemischten Signalen
US9201813B2 (en) 2013-09-12 2015-12-01 Socionext Inc. Signal distribution circuitry
EP2849344B1 (de) 2013-09-12 2019-11-06 Socionext Inc. Schaltungen und Verfahren zur Verwendung in Schaltungen mit gemischten Signalen
US9130587B2 (en) * 2014-01-29 2015-09-08 Broadcom Corporation Frame adaptive digital to analog converter and methods for use therewith
US9112528B1 (en) * 2014-01-29 2015-08-18 Broadcom Corporation Digital to analog converter with thermometer coding and methods for use therewith
US10778422B2 (en) * 2016-07-13 2020-09-15 International Business Machines Corporation Lithographically defined intrinsic identifier
KR102520450B1 (ko) * 2018-04-17 2023-04-12 에스케이하이닉스 주식회사 이미지 센싱 장치
CN110855294B (zh) * 2018-08-20 2023-08-25 圣邦微电子（北京）股份有限公司 电路模块以及数模转换器
US10797720B2 (en) * 2018-09-21 2020-10-06 Qualcomm Incorporated Apparatus and method for measuring current source mismatches in current-steering DAC by re-using R2R network
WO2021060280A1 (ja) * 2019-09-23 2021-04-01 ソニーセミコンダクタソリューションズ株式会社 電流波形生成回路および発光素子駆動回路
EP4125219A1 (de) 2021-07-27 2023-02-01 Socionext Inc. Strommodusschaltungen und kalibrierung davon

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4607248A (en) * 1983-07-25 1986-08-19 Analogic Corporation Digital to analog converter having integrated digital and analog circuitry
JPS61245718A (ja) * 1985-04-24 1986-11-01 Iwatsu Electric Co Ltd デイジタル−アナログ変換器
US5625360A (en) * 1995-09-05 1997-04-29 Motorola, Inc. Current source for reducing noise glitches generated in a digital to analog converter and method therefor
US6218892B1 (en) 1997-06-20 2001-04-17 Intel Corporation Differential circuits employing forward body bias
US6272666B1 (en) 1998-12-30 2001-08-07 Intel Corporation Transistor group mismatch detection and reduction
JP3505467B2 (ja) 2000-03-30 2004-03-08 株式会社東芝 半導体集積回路
GB2379107A (en) 2001-08-24 2003-02-26 Fujitsu Ltd A DAC using clock-controlled current switches and exhibiting reduced dependence of errors on input data
US7060566B2 (en) 2004-06-22 2006-06-13 Infineon Technologies Ag Standby current reduction over a process window with a trimmable well bias

Also Published As

Publication number Publication date
EP2023487B1 (de) 2010-09-15
EP2023487A1 (de) 2009-02-11
US20090051576A1 (en) 2009-02-26
US7746259B2 (en) 2010-06-29

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Legal Events

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8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE