DE602006001686D1 - Photoelectric conversion device and method for its production - Google Patents
Photoelectric conversion device and method for its productionInfo
- Publication number
- DE602006001686D1 DE602006001686D1 DE602006001686T DE602006001686T DE602006001686D1 DE 602006001686 D1 DE602006001686 D1 DE 602006001686D1 DE 602006001686 T DE602006001686 T DE 602006001686T DE 602006001686 T DE602006001686 T DE 602006001686T DE 602006001686 D1 DE602006001686 D1 DE 602006001686D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- photoelectric conversion
- conversion device
- photoelectric
- conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000006243 chemical reaction Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/10—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
- G01J1/16—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors
- G01J1/18—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors using comparison with a reference electric value
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4406—Plural ranges in circuit, e.g. switchable ranges; Adjusting sensitivity selecting gain values
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/06—Adjustment of display parameters
- G09G2320/0626—Adjustment of display parameters for control of overall brightness
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
- G09G2360/144—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light being ambient light
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
- G09G2360/145—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Theoretical Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Thin Film Transistor (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005148864 | 2005-05-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006001686D1 true DE602006001686D1 (en) | 2008-08-21 |
Family
ID=36930194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006001686T Active DE602006001686D1 (en) | 2005-05-23 | 2006-05-04 | Photoelectric conversion device and method for its production |
Country Status (6)
Country | Link |
---|---|
US (2) | US7705283B2 (en) |
EP (1) | EP1727120B1 (en) |
KR (1) | KR101250293B1 (en) |
CN (1) | CN1877269B (en) |
DE (1) | DE602006001686D1 (en) |
TW (1) | TWI423431B (en) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1724844A2 (en) | 2005-05-20 | 2006-11-22 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device, manufacturing method thereof and semiconductor device |
CN101233394B (en) * | 2005-07-27 | 2014-02-26 | 株式会社半导体能源研究所 | Semiconductor device |
US8053816B2 (en) * | 2006-03-10 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101315282B1 (en) | 2006-04-27 | 2013-10-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and electronic appliance using the same |
JP4187006B2 (en) * | 2006-04-28 | 2008-11-26 | エプソンイメージングデバイス株式会社 | Electronic circuit, electro-optical device, and electronic apparatus including the same |
KR101384247B1 (en) * | 2006-04-28 | 2014-04-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Photoelectric conversion element and manufacturing method of photoelectric conversion element |
US7791012B2 (en) * | 2006-09-29 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes |
JP2008181109A (en) * | 2006-12-27 | 2008-08-07 | Semiconductor Energy Lab Co Ltd | Liquid crystal display device and electronic equipment using the same |
US7923800B2 (en) * | 2006-12-27 | 2011-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US8058675B2 (en) | 2006-12-27 | 2011-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device using the same |
US8514165B2 (en) * | 2006-12-28 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7759629B2 (en) * | 2007-03-20 | 2010-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
WO2008123119A1 (en) * | 2007-03-26 | 2008-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device provided with the photoelectric conversion device |
KR20080101680A (en) | 2007-05-18 | 2008-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Liquid crystal display device, electronic device, and driving methods thereof |
KR101401528B1 (en) * | 2007-06-29 | 2014-06-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Photoelectric conversion device and electronic device provided with the photoelectric conversion device |
WO2009014155A1 (en) * | 2007-07-25 | 2009-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device having the same |
EP2075840B1 (en) | 2007-12-28 | 2014-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method for dicing a wafer with semiconductor elements formed thereon and corresponding device |
JP5448584B2 (en) * | 2008-06-25 | 2014-03-19 | 株式会社半導体エネルギー研究所 | Semiconductor device |
DE102008053707B3 (en) * | 2008-10-29 | 2010-04-15 | Atmel Automotive Gmbh | Circuit and method for operating a circuit |
KR102377866B1 (en) | 2009-10-21 | 2022-03-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Analog circuit and semiconductor device |
US8637802B2 (en) * | 2010-06-18 | 2014-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Photosensor, semiconductor device including photosensor, and light measurement method using photosensor |
US9117958B2 (en) | 2010-06-25 | 2015-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device comprising photoelectric conversion element |
US8716646B2 (en) | 2010-10-08 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for operating the same |
CN102147292B (en) * | 2011-01-12 | 2012-10-24 | 北京广微积电科技有限公司 | Infrared focal planar array and readout circuit of infrared focal planar array |
US9048788B2 (en) | 2011-05-13 | 2015-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a photoelectric conversion portion |
JP2014035307A (en) * | 2012-08-10 | 2014-02-24 | Hitachi High-Technologies Corp | Defect inspection device and defect inspection method |
CN107677366A (en) * | 2017-09-27 | 2018-02-09 | 中国科学院合肥物质科学研究院 | A kind of irradiance meter observation system of Larger Dynamic scope |
US10559596B2 (en) | 2018-03-23 | 2020-02-11 | Innolux Corporation | Display device |
KR102523383B1 (en) * | 2018-11-16 | 2023-04-19 | 엘지디스플레이 주식회사 | Display panel with photo sensor and display device using the same |
US11121281B2 (en) * | 2019-07-08 | 2021-09-14 | Arizona Board Of Regents On Behalf Of Arizona State University | Systems and methods for light direction detection microchips |
CN112710389A (en) * | 2019-10-24 | 2021-04-27 | 光焱科技股份有限公司 | Light detecting device |
CN112816067A (en) * | 2019-11-18 | 2021-05-18 | 光焱科技股份有限公司 | Light detection method |
WO2024057308A1 (en) * | 2022-09-12 | 2024-03-21 | Wi-Charge Ltd. | Efficient wireless power receiver |
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-
2006
- 2006-05-04 DE DE602006001686T patent/DE602006001686D1/en active Active
- 2006-05-04 EP EP06009252A patent/EP1727120B1/en not_active Expired - Fee Related
- 2006-05-18 TW TW095117702A patent/TWI423431B/en not_active IP Right Cessation
- 2006-05-18 US US11/436,086 patent/US7705283B2/en not_active Expired - Fee Related
- 2006-05-23 KR KR1020060046167A patent/KR101250293B1/en active IP Right Grant
- 2006-05-23 CN CN2006100848834A patent/CN1877269B/en not_active Expired - Fee Related
-
2010
- 2010-04-01 US US12/752,173 patent/US8263926B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7705283B2 (en) | 2010-04-27 |
KR101250293B1 (en) | 2013-04-03 |
TWI423431B (en) | 2014-01-11 |
TW200703632A (en) | 2007-01-16 |
US20060261253A1 (en) | 2006-11-23 |
EP1727120B1 (en) | 2008-07-09 |
US8263926B2 (en) | 2012-09-11 |
EP1727120A1 (en) | 2006-11-29 |
CN1877269A (en) | 2006-12-13 |
KR20060121728A (en) | 2006-11-29 |
US20100187405A1 (en) | 2010-07-29 |
CN1877269B (en) | 2010-12-29 |
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