DE3640248A1 - SEMICONDUCTOR DEVICE - Google Patents

SEMICONDUCTOR DEVICE

Info

Publication number
DE3640248A1
DE3640248A1 DE19863640248 DE3640248A DE3640248A1 DE 3640248 A1 DE3640248 A1 DE 3640248A1 DE 19863640248 DE19863640248 DE 19863640248 DE 3640248 A DE3640248 A DE 3640248A DE 3640248 A1 DE3640248 A1 DE 3640248A1
Authority
DE
Germany
Prior art keywords
copper
layer
angstroms
semiconductor device
palladium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19863640248
Other languages
German (de)
Inventor
Hem P Takiar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of DE3640248A1 publication Critical patent/DE3640248A1/en
Withdrawn legal-status Critical Current

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Classifications

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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

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Description

Die Erfindung bezieht sich auf eine Halbleitervor­ richtung mit mindestens einem zum Anlöten oder Bonden an Kupfer dienenden Kontaktfeldaufbau. Der Aufbau oder die Anordnung des Kontaktfeldes bezweckt inbesondere die Verbindung von Halbleitervorrichtungen mit dazuge­ hörigen Leiterrahmen oder anderen äußeren Schaltungen durch automatisches Bandlöten bzw. -schweißen oder Bonden. Vor allem befaßt sich die Erfindung mit dem Verhindern der Oxydation von Kupfer an oder in der Nach­ barschaft von Kontaktfeldern.The invention relates to a semiconductor direction with at least one for soldering or bonding contact field structure serving copper. The construction or the arrangement of the contact field is particularly intended the connection of semiconductor devices with it appropriate lead frames or other external circuits by automatic band soldering or welding or Bonding. Above all, the invention is concerned with the Prevent the oxidation of copper on or in the night neighborhood of contact fields.

Das automatische Bandschweißen bzw. -löten oder Bonden (tape automated bonding) ist ein Verfahren zum gleichzeitigen Verbinden einer Mehrzahl von Kontakt­ feldern an einer Halbleitervorrichtung mit einer äußeren Schaltung, insbesondere mit entsprechenden Leitern an einem Leiterrahmen, auf dem die Halbleitervorrich­ tung angebracht werden soll. Die zum Bonden dienenden Kontaktfelder sind gewöhnlich aus Kupfer hergestellt und bilden die Ein- und Ausgangsanschlüsse der Halb­ leitervorrichtung.Automatic tape welding or soldering or Bonding (tape automated bonding) is a process for connecting a plurality of contacts simultaneously fields on a semiconductor device with an outer Circuit, especially with appropriate conductors on a lead frame on which the semiconductor device device should be attached. The ones used for bonding Contact fields are usually made of copper and form the input and output connections of the half conductor device.

Zum automatischen Bonden wird ein Metallband ver­ wendet, in der Regel ein dünnes Kupferband oder ein plattiertes Kupferband, an welchem kurze Anschlußarme ausgebildet sind. Durch Ausrichten des Bandes mit der Halbleitervorrichtung können die inneren Enden der Anschlußarme durch Bonden mit den Kontaktfeldern an der Halbleitervorrichtung in einem einzigen Arbeitsgang verbunden werden, in der Regel durch Thermokompression oder Rückfluß (reflow), um die inneren Leiterverbin­ dungen herzustellen. Nachdem die inneren Leiterverbin­ dungen hergestellt sind, werden äußere Leiterverbindungen zwischen den äußeren Enden der Anschlußarme und den Leitern des Leiterrahmens hergestellt; das überschüssige Bandmaterial wird abgeschnitten.A metal tape is used for automatic bonding usually uses a thin copper tape or a plated copper tape on which short connecting arms are trained. By aligning the tape with the Semiconductor device can the inner ends of the  Connection arms by bonding with the contact fields on the Semiconductor device in a single operation be connected, usually by thermocompression or reflow to the inner conductor connection to manufacture solutions. After the inner conductor connection are made, external conductor connections between the outer ends of the connecting arms and the Ladders of the lead frame made; the excess Tape material is cut off.

Bei der Herstellung der inneren Leiterverbindungen ist es erforderlich, daß ein Vorsprung oder Buckel ent­ weder an den Anschlußarmen oder dem Kontaktfeld vorge­ sehen wird. Er dient dazu, einerseits das zur Herstellung der Verbindung notwendige Metall bereitzustellen, und andererseits den erforderlichen Höhenabstand zwischen dem Anschlußarm und dem Halbleiterplättchen zu schaffen. In jedem Falle ist es wichtig, dafür zu sorgen, daß das Kupferanschlußkontaktfeld oder das mit einem Buckel ver­ sehene Kupferanschlußkontaktfeld eine Vorbehandlung erfährt, um die Oxydation des Kupfers zu hindern, da eine solche die Güte der Verbindung und den elektrischen Kontakt mit dem Leiterarm beeinträchtigen würde.When making the inner conductor connections it is necessary that a protrusion or hump ent not featured on the connecting arms or the contact field will see. On the one hand, it serves to manufacture provide the necessary metal for the connection, and on the other hand, the required height distance between to create the connection arm and the semiconductor die. In any case, it is important to ensure that the Copper connector pad or that with a hump ver see copper connection contact field a pretreatment experiences to prevent the oxidation of the copper since such is the quality of the connection and the electrical Contact with the ladder arm would impair.

Bislang war es üblich, zum Schutz gegen Oxydation des Kupfers an dem Kontaktfeld oder dem mit einem Buckel versehenen Kontaktfeld eine Beschichtung mit einer dünnen Lage von Gold auf der obersten Schicht der Halbleiter­ vorrichtung vorzusehen, in der Regel durch Besprühen oder Anwendung eines nicht-elektrischen Goldplattie­ rungsbades. Die Goldschicht war gewöhnlich dünn, ihre Dicke betrug etwa 500 Angström, und die inneren Leiter waren in üblicher Weise entweder durch Verwendung eines gebuckelten Kupferbandes oder eines flachen Kupferbandes hergestellt.So far, it has been common to protect against oxidation of copper on the contact pad or with a hump provided contact field a coating with a thin Location of gold on the top layer of semiconductors  device, usually by spraying or using a non-electric gold plate baths. The gold layer was usually thin, hers Thickness was about 500 angstroms, and the inner conductor were in the usual way either by using a hunched copper tape or a flat copper tape produced.

Die Verwendung von Gold zum Oxydationsschutz von Kupfer ist zwar im allgemeinen brauchbar, aber mit be­ stimmten Nachteilen behaftet. Vor allem bei höheren Temperaturen diffundiert das Gold in das benachbarte Kupfer, wobei das Kupfer der Oxydation ausgesetzt bleibt. Die Möglichkeit der Diffusion erfordert die Verwendung dickerer Goldschichten, um einen angemessenen Schutz des darunterliegenden Kupfers zu gewähren, und in manchen Fällen wird dadurch auch die Fähigkeit der Goldschicht zum Schutz des Kupfers gegen Oxydation vermindert.The use of gold to protect against oxidation Copper is generally useful, but with be some disadvantages. Especially at higher ones Gold diffuses into the neighboring temperatures Copper, whereby the copper remains exposed to oxidation. The possibility of diffusion requires use thicker layers of gold to provide adequate protection the underlying copper, and in some This also affects the ability of the gold layer reduced to protect the copper against oxidation.

Es besteht daher ein großes Interesse daran, andere Möglichkeiten zum Schutz von Kupferanschlußkontaktfeldern und gebuckelten Kupferkontaktanschlußfeldern gegen Oxy­ dation zu schaffen. Vor allem ist es wichtig, andere schützende Beschichtungsmaterialien zu finden, die elek­ trisch leitfähig sind, in den bei Halbleitern in Betracht kommenden Umfeldern nicht reaktiv sind, eine geringe Fähigkeit zum Diffundieren in Kupfer aufweisen und in welche zu Diffundieren auch das Kupfer eine geringe Fähigkeit besitzt, und die sich leicht auf der Ober­ fläche von Halbleitervorrichtungen anbringen lassen.There is therefore a great interest in others Possibilities to protect copper connection contact fields and hunched copper contact pads against oxy dation to create. Above all, it is important to others to find protective coating materials that elec are trically conductive, in the case of semiconductors upcoming environments are not reactive, a low one Have ability to diffuse in copper and in which also diffuse the copper a little  Possesses ability, and which is easy on the upper have the surface of semiconductor devices attached.

Das automatische Bandlöten bzw. -schweißen oder Bonden an Halbleitervorrichtungen mit Anschlußkontakt­ feldern, die mit einem Buckel versehen sind, ist all­ gemein in der U.S. Patentschrift 40 00 842 beschrieben. Das automatische Bandbonden unter Verwendung von ge­ buckeltem Band ist in der U.S. Patentschrift 42 09 355 beschrieben. Die Verwendung verschiedener oxydations­ hindernder Schichtungen wie Gold, Chrom und Kupfer­ phosphat auf Kupferanschlußfeldaufbauten ist in der U.S. Patentschrift 41 88 438 beschrieben.Automatic band soldering or welding or Bonding to semiconductor devices with connection contact fields with a hump are all common in the U.S. Patent specification 40 00 842 described. Automatic tape bonding using ge hunched band is in the U.S. Patent Specification 42 09 355 described. The use of various oxidations preventive layers such as gold, chrome and copper phosphate on copper connection field assemblies is in the U.S. Patent specification 41 88 438.

Die Erfindung befaßt sich mit verbesserten Möglich­ keiten zur Verhinderung der Oxydation von Anordnungen zur Verbindung mit Kupfer an Halbleitervorrichtungen (Halbleiterbausteinen). Die Anordnungen zur Verbindung mit Kupfer sind solche, wie sie für das automatische Bandlöten oder -schweißen der Halbleiter an einen Leiter­ rahmen oder eine andere äußere Schaltung benutzbar sind. Insbesondere bilden die Anordnungen zur Verbindung mit Kupfer die inneren Leitungsanschlüsse mit den Anschluß­ armen des Kupferbandes, mit dem die Halbleitervorrich­ tung verbunden werden soll. Die Erfindung ist sowohl anwendbar mit gebuckelten Anschlußkontaktfeldanordnungen, die mit einem flachen Kupferband zusammenpassen sollen, als auch mit buckelfreien, also flachen Anschlußfeld­ anordnungen, die mit gebuckelten Bändern zusammen­ passen sollen.The invention is concerned with improved possibilities capabilities to prevent device oxidation for connection with copper on semiconductor devices (Semiconductor devices). The connection arrangements with copper are those for the automatic Band soldering or welding the semiconductors to a conductor frame or another external circuit can be used. In particular, form the arrangements for connection to Copper the inner pipe connections with the connector arms of the copper tape with which the semiconductor device device should be connected. The invention is both applicable with hunched connection contact field arrangements, which should fit together with a flat copper band, as well as with a hump-free, flat connection field  arrangements made with hunched bands should fit.

Erfindungsgemäß wird eine Schicht aus Palladium als Oxydationsschutz auf den Kupferanschlußfeldanord­ nungen angebracht. Vorzugsweise wird die Palladium­ schicht bis zu einer Dicke im Bereich von 80 bis 300 Angström oder noch besser im Bereich zwischen 100 und 200 Angström aufgebracht. Dieses Aufbringen geschieht in der Regel durch Aufsprühen. Es wurde gefunden, daß Palladium im Gegensatz zu den aus Gold bestehenden Oxydationsschutzschichten bekannter Art eine sehr niedrige Fähigkeit zur Wanderung in die angrenzende Kupferschicht aufweist, und zwar auch bei hohen Tempe­ raturen. Darüber hinaus widersteht auch das Kupfer einer Wanderung in das Palladium, selbst bei den gleichen hohen Temperaturen. Es wurde ferner gefunden, daß Palladium sich durchaus mit der Formierung elektrischer Anschlußverbindungen niedrigen Widerstandes zwischen dem zu bondenden Band und der zu bondenden Kontaktfeld­ anordnung verträgt, und daß es sich im wesentlichen nicht reaktiv verhält unter den Bedingungen, denen der Halbleiter normalerweise ausgesetzt ist. Vor allem ist das Palladium auch hoch-widerstandsfähig gegen Reaktion in hoch-sauerstoffhaltigen Umfeldern bei erhöhten Tem­ peraturen.According to the invention, a layer of palladium as oxidation protection on the copper connection field arrangement attached. Preferably the palladium layer to a thickness in the range of 80 to 300 Angstroms or even better in the range between 100 and 200 angstroms applied. This application happens usually by spraying. It was found that Palladium in contrast to those made of gold Oxidation protection layers of a known type a very low ability to hike to the adjacent Has copper layer, even at high temperatures fittings. The copper also resists one Hike to the Palladium, even with the same high temperatures. It was also found that Palladium is quite concerned with the formation of electrical Low resistance connection connections between the band to be bonded and the contact field to be bonded arrangement tolerates, and that it is essentially does not react under the conditions to which the Semiconductor is normally exposed. Most of all the palladium is also highly resistant to reaction in high-oxygen environments at elevated temperatures temperatures.

Im folgenden ist die Erfindung anhand der Zeich­ nungen beispielsweise näher erläutert. Es zeigtThe invention is based on the drawing for example, explained in more detail. It shows

Fig. 1 ein mit Aluminium metallisiertes Kon­ taktfeld, das vor der Ausbildung des zum Bonden an Kupfer dienenden Kontaktfeldaufbaues gemäß der Erfin­ dung von zwei Isolierschichten abgedeckt ist; Figure 1 is a clock-field metallized with aluminum Kon, which before the formation of serving for bonding to copper contact pad structure according to the dung OF INVENTION is covered by two insulating layers.

Fig. 2 das metallisierte Kontaktfeld von Fig. 1 nach Einätzen einer Öffnung in die Isolierschichten zur Schaffung eines Zuganges zu dem metallisierten Kontaktfeld; FIG. 2 shows the metallized contact field from FIG. 1 after etching an opening into the insulating layers to provide access to the metallized contact field;

Fig. 3 das gemäß Fig. 2 freigelegte metalli­ sierte Kontaktfeld, nachdem übereinander auf dieses Schichten aus Aluminium, Nickel und Kupfer nachein­ ander aufgebracht worden sind; Fig. 3 exposed according to FIG 2 metallized contact field after successive layers of aluminum, nickel and copper have been applied to each other;

Fig. 4 den metallisierten Kontaktfeldaufbau von Fig. 3, zusätzlich versehen mit einer darüber an­ gebrachten Photoresistschicht; FIG. 4 shows the metallized contact field structure from FIG. 3, additionally provided with a photoresist layer applied thereover;

Fig. 5 den Aufbau von Fig. 4 nach Exponierung und Entwicklung der Photoresistschicht, so daß alle anderen Flächenteile dieser mit Ausnahme derjenigen, welche das metallisierte Kontaktfeld überlagern, ent­ fernt sind; Fig. 5 shows the structure of Fig. 4 after exposure and development of the photoresist layer, so that all other parts of the surface thereof, with the exception of those which overlay the metallized contact field, are removed;

Fig. 6 den Kupferanschlußkontaktfeldaufbau gemäß der Erfindung nach Ätzen der Kupfer-, Nickel­ und Aluminiumschichten und Abstreifen des Photo­ resists; Fig. 6 shows the copper connection contact structure according to the invention by etching the copper, nickel and aluminum layers and stripping the photoresist;

Fig. 7 den Kupferanschlußkontaktfeldaufbau von Fig. 6 nach Anbringung einer Palladiumschicht zur Hinderung der Oxydation des Kupfers; und FIG. 7 shows the copper connection contact field structure from FIG. 6 after the application of a palladium layer to prevent the oxidation of the copper; and

Fig. 8 eine andere Ausführungsform der Er­ findung, bei welcher der Kupferanschlußkontaktfeld­ aufbau von Fig. 6 mit einem Kupfervorsprung oder -buckel versehen ist und eine Palladiumbeschichtung aufweist, um die Oxydation des Kupferbuckels zu hindern. Fig. 8 shows another embodiment of the invention, in which the copper connection pad structure of Fig. 6 is provided with a copper protrusion or projection and has a palladium coating to prevent the oxidation of the copper projection.

Durch die Erfindung wird ein verbesserter Kupfer­ anschlußkontaktfeldaufbau, insbesondere für automa­ tisches Bandbonden von Halbleitervorrichtungen ge­ schaffen. Der Kupferanschlußkontaktfeldaufbau weist die kennzeichnende Besonderheit auf, daß er mit einer abschließenden Palladiumschicht versehen ist, die eine Hinderung der Oxydation des Kupferanschlußkontaktfeld­ aufbaues bewirkt, aber gleichzeitig das Bonden des Kupferkontaktfeldaufbaues durch Thermokompression an ein Band, wie es gewöhnlich zum Bonden verwendet wird, insbesondere ein Kupferband, ermöglicht. Die Palladium­ schicht besteht in der Regel aus reinem Palladium oder einer Legierung, die in erster Linie aus Palladium besteht, und wird durch Aufsprühen oder nicht-elek­ trisches Plattieren im Endstadium der Plättchenher­ stellung aufgebracht. The invention provides an improved copper Connection contact field structure, especially for automa table tape bonding of semiconductor devices create. The copper pad pad configuration shows the characteristic peculiarity that he with a final palladium layer is provided, the one Prevention of oxidation of the copper contact pad structure, but at the same time the bonding of the Copper contact field by thermocompression a tape that is commonly used for bonding, in particular a copper tape. The palladium layer usually consists of pure palladium or an alloy made primarily of palladium and is by spraying or non-elec tric plating in the final stage of the platelets position angry.  

Bei der bevorzugten Ausführungsform der Erfindung wird der Kupferanschlußkontaktfeldaufbau aus drei Metallschichten gebildet, die nacheinander über einem freiliegenden, mit Aluminium metallisierten Kontakt­ feld aufgebracht sind; dieser Aufbau hindert die Wan­ derung des Kupfers aus dem Anschlußkontaktfeld in das darunter liegende Aluminium. Wenngleich dies die bevor­ zugte Ausführungsform ist, so ist doch die Erfindung in gleicher Weise vorteilhaft nutzbar mit anderen Kon­ taktfeldaufbauten, die zur Zeit bekannt sind und künftig entwickelt werden mögen. Die Erfindung bezieht sich auf die Verhinderung der Oxydation des freiliegenden Kupfers an dem Kupferanschlußkontaktfeldaufbau. Sie ist nicht beschränkt auf die besondere Art und Weise, in der das Kupfer mit den unterlegten Schaltungselementen verbunden ist.In the preferred embodiment of the invention the copper connection pad structure is made up of three Metal layers formed one after the other exposed contact metallized with aluminum field are applied; this structure prevents the tub change of the copper from the connection contact field in the aluminum underneath. Although this is before drafted embodiment is, but is the invention usable in the same way with other con tact field structures that are currently known and will be in the future like to be developed. The invention relates on preventing the oxidation of the exposed Copper on the copper pad pad assembly. she is not limited to the particular way in the copper with the underlying circuit elements connected is.

Anhand der Fig. 1 bis 8 wird die Herstellung der Kupferanschlußkontaktfeldaufbauten gemäß der Erfindung im einzelnen näher beschrieben. Fig. 1 veranschaulicht ein Halbleitersubstrat 10, auf dessen Oberfläche ein mit Aluminium metallisiertes Kontaktfeld 12 ausgebildet ist. Über dem metallisierten Kontaktfeld 12 sind passi­ vierende Schichten 14 und 16 in bekannter Art und Weise hergestellt. Um den Kupferanschlußkontaktfeldaufbau gemäß der Erfindung zu schaffen, ist es zunächst not­ wendig, eine Zugangsöffnung durch die Isolierschichten 14 und 16 auszubilden. Dies kann durch photolithographische Verfahren bekannter Art geschehen, so daß die Öffnung 18 entsteht, wie in Fig. 2 veranschaulicht.The preparation of the copper connection contact structures will be described according to the invention in detail with reference to FIGS. 1 to 8. Fig. 1 illustrates a semiconductor substrate 10 is formed on the surface of a metallized with aluminum contact array 12. Passive layers 14 and 16 are produced in a known manner over the metallized contact field 12 . In order to create the copper connection contact field structure according to the invention, it is first of all necessary to form an access opening through the insulating layers 14 and 16 . This can be done by photolithographic methods of known type, so that the opening 18 is formed, as illustrated in FIG. 2.

Nach der Herstellung der Öffnung 18 kann eine Alu­ miniumschicht 20 (Fig. 3) direkt auf dem mit Aluminium metallisierten Kontaktfeld 12 sowie als Beschichtung der Isolierschicht 16 aufgebracht werden. Die Aluminium­ schicht wird in der Regel eine Dicke von mindestens 2000 Angström oder noch besser im Bereich zwischen 2000 und 6000 Angström, vorzugsweise etwa 4000 Angström, haben. Da die Aluminiumschicht direkt auf dem mit Aluminium metallisierten Kontaktfeld 12 angebracht wird, kann die Aluminiumschicht durch Aufsprühen, Aufdampfen oder nach einem anderen gebräuchlichen Verfahren angebracht werden.After the opening 18 has been produced , an aluminum layer 20 ( FIG. 3) can be applied directly to the contact area 12 metallized with aluminum and as a coating of the insulating layer 16 . The aluminum layer will usually have a thickness of at least 2000 angstroms or even better in the range between 2000 and 6000 angstroms, preferably about 4000 angstroms. Since the aluminum layer is applied directly to the contact area 12 metallized with aluminum, the aluminum layer can be applied by spraying, vapor deposition or by another customary method.

Nachdem die Aluminiumschicht 20 aufgebracht ist, wird eine Nickelschicht 22 direkt über der Aluminium­ schicht angebracht. Die Nickelschicht 22 kann nach ge­ bräuchlichen Verfahren, in der Regel durch Aufsprühen, aufgebracht werden; sie bildet eine Aluminiumlegierung an der Grenzfläche zwischen den Schichten 20 und 22. Die Dicke der Nickelschicht ist ausreichend, um die Wan­ derung des Kupfers in das Aluminium zu verhindern; sie beträgt in der Regel mindestens etwa 2000 Angström oder noch besser sie liegt im Bereich zwischen 2000 und 5000 Angström, vorzugsweise bei etwa 3000 Angström. After the aluminum layer 20 is applied, a nickel layer 22 is applied directly over the aluminum layer. The nickel layer 22 can be applied by common methods, usually by spraying; it forms an aluminum alloy at the interface between layers 20 and 22 . The thickness of the nickel layer is sufficient to prevent the copper from migrating into the aluminum; it is usually at least about 2000 angstroms or even better it is in the range between 2000 and 5000 angstroms, preferably about 3000 angstroms.

Danach wird eine Kupferschicht 24 bis zu einer Dicke von mindestens 4000 Angström aufgesprüht, in der Regel im Bereich von etwa 4000 bis 15 000 Angström, vorzugsweise von etwa 8000 Angström. Die Kupferschicht kann, wie an sich bekannt, zum direkten Bonden an das gebuckelte Kupferband dienen.A copper layer 24 is then sprayed on to a thickness of at least 4000 angstroms, generally in the range from approximately 4000 to 15,000 angstroms, preferably from approximately 8000 angstroms. As is known per se, the copper layer can be used for direct bonding to the bent copper band.

Nach Anbringung der drei Metallschichten 20, 22 und 24 des metallisierten Anschlußfeldaufbaues wird eine Photoresistschicht 26 (Fig. 4) auf der Halbleitervor­ richtung angebracht. Der Photoresist wird zur Bestimmung der Grenzen des metallisierten Kontaktfeldaufbaues be­ nutzt. Zunächst wird der Photoresist exponiert und ent­ wickelt, so daß der Photoresist vom größten Teil der Oberfläche der Halbleitervorrichtung entfernt wird, aber oberhalb des mit Aluminium metallisierten Kontaktfelds 12 verbleibt, wie in Fig. 5 dargestellt. Die Schichten aus Kupfer bzw. Nickel 22, 24 werden dann mit einer Ätzflüssigkeit wie Salpetersäure und Wasserstoffperoxid und anschließend durch eine Aluminiumätzung in einer Mischung aus Phosphorsäure und Essigsäure behandelt. Die Ätzungen werden fortgesetzt, bis die Metallschichten im wesentlichen von allen Flächenteilen der Halbleiter­ vorrichtung mit Ausnahme derjenigen oberhalb des me­ tallisierten Kontaktfelds 12 entfernt sind, das durch die Photoresistkappe 26 a (Fig. 5) geschützt ist. Die Photoresistkappe 26 a wird dann abgenommen und das Kupfer in einer milden Säure gereinigt. Der sich daraus er­ gebende Aufbau ist in Fig. 6 dargestellt.After the three metal layers 20 , 22 and 24 of the metallized connection field structure have been applied, a photoresist layer 26 ( FIG. 4) is applied to the semiconductor device. The photoresist is used to determine the limits of the metallized contact field structure. First, the photoresist is exposed and developed so that the photoresist is removed from most of the surface of the semiconductor device but remains above the contact area 12 metallized with aluminum, as shown in FIG. 5. The layers of copper or nickel 22 , 24 are then treated with an etching liquid such as nitric acid and hydrogen peroxide and then by aluminum etching in a mixture of phosphoric acid and acetic acid. The etching is continued until the metal layers are substantially removed from all surface parts of the semiconductor device with the exception of those above the metalized contact field 12 , which is protected by the photoresist cap 26 a ( FIG. 5). The photoresist cap 26 a is then removed and the copper cleaned in a mild acid. The resulting structure is shown in Fig. 6.

Der in Fig. 6 dargestellte Aufbau ist im allge­ meinen für das Bonden durch Thermokompression an ein Kupferband geeignet. Die freiliegende Kupferschicht 24 ist jedoch der Oxydation unterworfen, wenn die Halb­ leitervorrichtung einer Sauerstoff enthaltenden Um­ gebung ausgesetzt wird. Eine solche Oxydation ist un­ erwünscht, da sie sich mit der Formierung einer Bin­ dung geringen Widerstandes mit dem Kupferband nicht verträgt.The structure shown in Fig. 6 is generally suitable for bonding by thermal compression to a copper tape. However, the exposed copper layer 24 is subjected to oxidation when the semiconductor device is exposed to an oxygen-containing environment. Such oxidation is undesirable because it is incompatible with the formation of a low resistance bond with the copper tape.

Daher wird in einer ersten Ausführungsform der Erfindung gemäß Fig. 7 die Oxydation des Kontaktfeld­ aufbaues 24 durch die Anbringung einer dünnen Palla­ diumschicht 30 auf der Oberseite der aus Kupfer be­ stehenden Metallisierungsschicht 24 gehindert. Die Palladiumschicht 30 wird auf der gesamten Oberseite der Halbleitervorrichtung entweder durch Aufsprühen oder durch nicht-elektrisches Plattieren angebracht. Die Palladiumschicht 30 wird dann von allen Flächen­ teilen des Plättchens bis auf die Kupferanschlußkon­ taktfelder 24 durch gebräuchliche photolithographische Maskierungsverfahren entfernt. Stattdessen kann aber auch wahlweise die Palladiumschicht durch Aufsprühen oder Aufdampfen auf den Aufbau gemäß Fig. 3 angebracht werden. Das überschüssige Palladium wird dann während des nachfolgenden Ätzvorganges der in Verbindung mit den Fig. 4 bis 6 beschrieben wurde, entfernt.Therefore, in a first embodiment of the invention Fig oxidation of the contact box according to. 7 structure 24 by placing a thin Palla diumschicht 30 from on top of the metallization layer 24 be made of copper standing. The palladium layer 30 is applied to the entire top of the semiconductor device either by spraying or by non-electrical plating. The palladium layer 30 is then removed from all surfaces of the platelet except for the copper connection contact fields 24 by conventional photolithographic masking processes. Instead, the palladium layer can alternatively be applied to the structure according to FIG. 3 by spraying or vapor deposition. The excess palladium is then removed during the subsequent etching process described in connection with FIGS. 4 to 6.

In jedem Fall wird das Palladium schließlich bis zu einer Dicke im Bereich von 80 bis 300 Angström oder noch besser in dem Bereich von 100 bis 200 Angström aufgebracht. Es wurde gefunden, daß die Palladium­ schichten unter etwa 80 Angström häufig Unstetigkeiten bezüglich der Abdeckung des Kupfers aufweisen und daher für die Hinderung der Oxydation weniger wirksam sind. Im Gegensatz hierzu sind Palladiumschichten mit einer Dicke von mehr als etwa 300 Angström sehr brüchig und neigen zur Rißbildung während des Bondens an das Kupferband durch Thermokompression. Die Palladium­ schicht 30 wird in der Regel durch Aufsprühen aufge­ bracht, wenngleich nicht-elektrisches Plattieren eben­ falls stattfinden kann.In any event, the palladium is finally deposited to a thickness in the range of 80 to 300 angstroms, or even better in the range of 100 to 200 angstroms. It has been found that the palladium layers below about 80 angstroms often have discontinuities in copper coverage and are therefore less effective in preventing oxidation. In contrast, palladium layers with a thickness of more than about 300 angstroms are very brittle and tend to crack during the bonding to the copper tape by thermocompression. The palladium layer 30 is usually applied by spraying, although non-electrical plating can also take place.

In Fig. 8 ist eine zweite Ausführungsform der Er­ findung dargestellt. Ein Kupfervorsprung oder -buckel 32 ist direkt auf der Oberseite der Kupferschicht 24 aus­ gebildet. Der Kupfervorsprung 32 ist durch herkömmliche Verfahren hergestellt; er ragt in der Regel um etwa 0,0254 mm (0,001 Zoll) über die Oberseite der Halbleiter­ vorrichtung hinaus. Dann wird eine Palladiumschicht 34 über dem Kupferbuckel nach einem der in Verbindung mit Fig. 7 beschriebenen Verfahren aufgebracht. Wie in Fig. 8 gezeigt, kann die Palladiumschicht 34 auf den Aufbau gemäß Fig. 3 aufgebracht und danach mit den Schichten 20, 22 und 24 weggeätzt werden, da die senk­ rechten Flächen des Palladiums entfernt worden sind.In Fig. 8, a second embodiment of the invention is shown. A copper protrusion or boss 32 is formed directly on the top of the copper layer 24 . The copper protrusion 32 is made by conventional methods; it typically protrudes about 0.0254 mm (0.001 inches) above the top of the semiconductor device. A palladium layer 34 is then applied over the copper hump by one of the methods described in connection with FIG. 7. As shown in FIG. 8, the palladium layer 34 can be applied to the structure according to FIG. 3 and then etched away with the layers 20 , 22 and 24 , since the perpendicular surfaces of the palladium have been removed.

Nach der Aufbringung der Palladiumschicht 30 oder 34 sind die Halbleitervorrichtungen im allgemeinen bereit für die der herkömmlichen Technik entsprechende Formierung der Verbindungen der inneren Leiter mit dem Kupferband.After deposition of the palladium layer 30 or 34 , the semiconductor devices are generally ready to form the connections of the inner conductors to the copper tape in accordance with conventional technology.

Die Ausführungsbeispiele sollen mit ihren Einzel­ heiten nur zur Veranschaulichung und zur Erleichterung des Verständnisses der Erfindung dienen, sie haben jedoch keine beschränkende Bedeutung.The exemplary embodiments are intended with their individual are for illustration and relief only serve the understanding of the invention, they have however, no limiting meaning.

Claims (28)

1. Halbleitervorrichtung mit mindestens einem zum Anlöten oder Bonden an Kupfer dienenden Kontaktfeldauf­ bau, dadurch gekennzeichnet, daß der Kontaktfeldaufbau mit einer Beschichtung aus Palladium versehen ist, die dazu dient, die Oxydation des angrenzenden Kupfers zu hindern.1. Semiconductor device with at least one for soldering or bonding to copper serving Kontaktfeldauf construction, characterized in that the contact field structure is provided with a coating of palladium, which serves to prevent the oxidation of the adjacent copper. 2. Halbleitervorrichtung nach Anspruch 1, dadurch gekennzeichnet, daß die aus Palladium bestehende Be­ schichtung eine Dicke im Bereich von 80 bis 300 Angström hat. 2. A semiconductor device according to claim 1, characterized characterized in that the palladium Be layering a thickness in the range of 80 to 300 angstroms Has.   3. Halbleitervorrichtung nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß die aus Palladium bestehende Beschichtung durch Besprühen oder nicht-elektrisches Plattieren (electroless plating) angebracht ist.3. The semiconductor device according to claim 1 or 2, characterized in that the palladium Coating by spraying or non-electrical Electroless plating is appropriate. 4. Halbleitervorrichtung nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß der zum Anlöten oder Bonden an Kupfer dienende Kontaktfeldaufbau als Buckel ausgebildet (bumped) ist.4. Semiconductor device according to one of the claims 1 to 3, characterized in that for soldering or Bonding to the copper contact field structure as a hump is bumped. 5. Halbleitervorrichtung nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß der zum Anlöten oder Bonden an Kupfer dienende Kontaktfeldaufbau buckel­ frei ausgebildet, also im wesentlichen flach ist.5. Semiconductor device according to one of the claims 1 to 3, characterized in that for soldering or bonding to copper contact field structure hump freely formed, that is essentially flat. 6. Halbleitervorrichtung mit mindestens einem zum Anlöten oder Bonden an Kupfer dienenden Kontaktfeldauf­ bau, dadurch gekennzeichnet, daß das Kontaktfeld mit Aluminium metallisiert, eine Aluminiumschicht direkt auf dem mit Aluminium metallisierten Kontaktfeld angebracht, eine Schicht aus Nickel direkt auf der Aluminiumschicht durch Aufsprühen zwecks Bildung einer stabilen Aluminium- Nickellegierung an der Grenzfläche vorgesehen, eine Schicht aus Kupfer direkt auf der Nickelschicht zur Ermöglichung des Bondens an ein Kupferband angebracht und eine Palla­ diumschicht auf der Kupferschicht aufgebracht ist, die dazu dient, die Oxydation des angrenzenden Kupfers zu hindern. 6. Semiconductor device with at least one for Soldering or bonding to contact field serving copper construction, characterized in that the contact field with Metallized aluminum, an aluminum layer directly on attached to the contact field metallized with aluminum, a layer of nickel directly on the aluminum layer by spraying to form a stable aluminum Nickel alloy provided at the interface, one layer made of copper directly on the nickel layer to make it possible of bonding attached to a copper tape and a palla dium layer is applied to the copper layer, the serves to oxidize the adjacent copper prevent.   7. Halbleitervorrichtung nach Anspruch 6, dadurch gekennzeichnet, daß die Aluminiumschicht eine Dicke im Bereich von etwa 2000 Angström bis 6000 Angström auf­ weist.7. A semiconductor device according to claim 6, characterized characterized in that the aluminum layer has a thickness in Range from about 2000 angstroms to 6000 angstroms points. 8. Halbleitervorrichtung nach Anspruch 6, dadurch gekennzeichnet, daß die Nickelschicht eine Dicke im Bereich von etwa 2000 Angström bis 5000 Angström auf­ weist.8. A semiconductor device according to claim 6, characterized characterized in that the nickel layer has a thickness in Range from about 2000 angstroms to 5000 angstroms points. 9. Halbleitervorrichtung nach Anspruch 6, dadurch gekennzeichnet, daß die Kupferschicht eine Dicke im Bereich von etwa 4000 Angström bis 15 000 Angström auf­ weist.9. A semiconductor device according to claim 6, characterized characterized in that the copper layer has a thickness in Range from about 4000 angstroms to 15,000 angstroms points. 10. Halbleitervorrichtung nach Anspruch 6, dadurch gekennzeichnet, daß die Palladiumschicht eine Dicke im Bereich von etwa 80 bis 300 Angström aufweist.10. A semiconductor device according to claim 6, characterized characterized in that the palladium layer has a thickness in Has a range of about 80 to 300 angstroms. 11. Halbleitervorrichtung nach Anspruch 6, dadurch gekennzeichnet, daß die Kupferschicht einen Buckel auf­ weist.11. A semiconductor device according to claim 6, characterized characterized in that the copper layer has a hump points. 12. Halbleitervorrichtung nach Anspruch 6, dadurch gekennzeichnet, daß die Kupferschicht im wesentlichen buckelfrei, also flach ausgebildet ist.12. A semiconductor device according to claim 6, characterized characterized in that the copper layer essentially hump-free, i.e. flat. 13. Halbleitervorrichtung nach Anspruch 6, dadurch gekennzeichnet, daß die Palladiumschicht durch Auf­ sprühen oder nicht-elektrisches Plattieren aufgebracht ist. 13. The semiconductor device according to claim 6, characterized characterized in that the palladium layer by Auf spray or non-electrical plating applied is.   14. Verfahren zur Herstellung einer zum Anlöten oder Bonden an Kupfer geeigneten Anordnung an einem mit einer Aluminiummetallisierung versehenen Kontaktfeld, die dazu dient, das Anlöten oder Bonden an ein Kupferband zu ermöglichen, dadurch gekennzeichnet, daß eine Aluminiumschicht direkt auf dem mit Alu­ minium metallisierten Kontaktfeld angebracht wird,14. Process for making one for soldering or Bonding to a suitable arrangement on a copper with a Aluminum metallization provided contact field, this serves to solder or bond to a copper tape enable, characterized, that an aluminum layer directly on top of that with aluminum minium metallized contact field is attached, daß eine Nickelschicht direkt auf der Aluminium­ schicht angebracht wird,that a nickel layer directly on top of the aluminum layer is attached, daß eine Kupferschicht direkt auf der Nickelschicht angebracht wird, undthat a copper layer directly on top of the nickel layer is attached, and daß eine Palladiumschicht auf der Kupferschicht an­ gebracht wird, um die Oxydation des Kupfers zu hindern.that a palladium layer on top of the copper layer is brought to prevent the oxidation of the copper. 15. Verfahren nach Anspruch 14, dadurch gekenn­ zeichnet, daß die Aluminiumschicht bis zu einer Dicke im Bereich von etwa 2000 Angström bis 6000 Angström aufgebracht wird.15. The method according to claim 14, characterized records that the aluminum layer to a thickness in the range of about 2000 angstroms to 6000 angstroms is applied. 16. Verfahren nach Anspruch 14, dadurch gekenn­ zeichnet, daß die Nickelschicht bis zu einer Dicke im Bereich von etwa 2000 Angström bis 5000 Angström aufgebracht wird.16. The method according to claim 14, characterized in records that the nickel layer to a thickness in the range of approximately 2000 angstroms to 5000 angstroms is applied. 17. Verfahren nach Anspruch 14, dadurch gekenn­ zeichnet, daß die Kupferschicht bis zu einer Dicke im Bereich von etwa 4000 Angström bis 15 000 Angström aufgebracht wird. 17. The method according to claim 14, characterized records that the copper layer to a thickness in the range of approximately 4,000 angstroms to 15,000 angstroms is applied.   18. Verfahren nach Anspruch 14, dadurch gekenn­ zeichnet, daß ein Kupferbuckel auf der Kupferschicht angebracht wird, bevor das Palladium aufgebracht wird.18. The method according to claim 14, characterized records that a copper hump on the copper layer is attached before the palladium is applied becomes. 19. Verfahren nach Anspruch 14, dadurch gekenn­ zeichnet, daß die Palladiumschicht bis zu einer Dicke im Bereich von etwa 80 bis 300 Angström aufgebracht wird.19. The method according to claim 14, characterized records that the palladium layer to a thickness applied in the range of about 80 to 300 angstroms becomes. 20. Verfahren nach Anspruch 19, dadurch gekenn­ zeichnet, daß das Palladium durch Aufsprühen oder nicht-elektrisches Plattieren aufgebracht wird.20. The method according to claim 19, characterized records that the palladium by spraying or non-electrical plating is applied. 21. Verfahren zur Ausbildung einer Anordnung zum Anlöten oder Bonden von Kupfer an einer Halbleiter­ vorrichtung zwecks Bondens durch Thermokompression an ein Kupferband, dadurch gekennzeichnet, daß eine Palladiumschicht auf der Anordnung zum Bonden an Kupfer angebracht wird, um die Oxydation des Kupfers zu hin­ dern.21. Method for forming an arrangement for Soldering or bonding copper to a semiconductor device for bonding by thermocompression to a copper strip, characterized in that a Palladium layer on the arrangement for bonding to copper is attached to the oxidation of the copper other. 22. Verfahren nach Anspruch 21, dadurch gekenn­ zeichnet, daß die Palladiumschicht bis zu einer Dicke im Bereich von 80 bis 300 Angström aufgebracht wird.22. The method according to claim 21, characterized records that the palladium layer to a thickness is applied in the range of 80 to 300 angstroms. 23. Verfahren nach Anspruch 21, dadurch gekenn­ zeichnet, daß die Palladiumschicht durch Aufsprühen oder nicht-elektrisches Plattieren aufgebracht wird.23. The method according to claim 21, characterized records that the palladium layer by spraying or non-electric plating is applied. 24. Verfahren nach Anspruch 21, dadurch gekenn­ zeichnet, daß die Anordnung zum Bonden an Kupfer mit einem Buckel versehen ist.24. The method according to claim 21, characterized records that the arrangement for bonding to copper  is humped. 25. Verfahren nach Anspruch 21, dadurch gekenn­ zeichnet, daß die Anordnung zum Bonden an Kupfer buckelfrei, also im wesentlich flach ausgebildet ist.25. The method according to claim 21, characterized records that the arrangement for bonding to copper hump-free, essentially flat is.
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