DE3540920A1 - Frequency generator with raised oscillating circuit voltage - Google Patents

Frequency generator with raised oscillating circuit voltage

Info

Publication number
DE3540920A1
DE3540920A1 DE19853540920 DE3540920A DE3540920A1 DE 3540920 A1 DE3540920 A1 DE 3540920A1 DE 19853540920 DE19853540920 DE 19853540920 DE 3540920 A DE3540920 A DE 3540920A DE 3540920 A1 DE3540920 A1 DE 3540920A1
Authority
DE
Germany
Prior art keywords
voltage
transistor
oscillating circuit
frequency generator
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19853540920
Other languages
German (de)
Other versions
DE3540920C2 (en
Inventor
Werner Dipl Ing Gaertner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to DE19853540920 priority Critical patent/DE3540920A1/en
Publication of DE3540920A1 publication Critical patent/DE3540920A1/en
Application granted granted Critical
Publication of DE3540920C2 publication Critical patent/DE3540920C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/136—Modifications for switching at zero crossing in thyristor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

The invention includes a circuit with which it is possible to double the supplied voltage to a frequency generator in single-phase operation with a parallel oscillating circuit, so that considerably higher useful power can be achieved with one and the same transistor with a specified maximum permitted drain or collector voltage. The oscillating circuit voltage, which in normal operation rises to twice the supplied voltage, and for which the transistor must be designed in relation to its electric strength, has its top half-wave cut off by a gate cut-off thyristor, which is connected in the supply line between the oscillating circuit and the transistor, so that the transistor is loaded, in terms of voltage, with the supplied voltage only. The positive half-wave then lies on the thyristor, which during C operation of the generator is only switched on and off in the current-free state.

Description

Bei einem Eintakt Frequenzgenerator mit Parallelschwingkreis und Transistor als Schaltelement ist es erforderlich die Versorgungsspannung auf die Hälfte der zulässigen Transistorspannung zu begrenzen, da durch das Durchschwingen der Wechselspannung kurzzeitige Spannungsspitzen von der doppelten Versorgungsspannung auftreten.With a single-ended frequency generator with a parallel resonant circuit and transistor as a switching element it is necessary the supply voltage to half the permissible transistor voltage limit as by swinging through the AC voltage short-term voltage peaks of double Supply voltage occur.

Wird erfindungsgemäß (s. Fig. 1) in die Zuleitung des Leistungstransistors 2, welcher im C-oder D-Betrieb arbeitet ein GTO- Thyristor 1 eingefügt und dieser durch den Trafo 3 im richtigen Schaltrhytmus von der Wechselspannung angesteuert, so ist es möglich die positiven Spannungsspitzen vom Transistor 2 fernzuhalten. Diese Spannungshalbwellen werden vom GTO-Thyristor aufgenommen. Ein Widerstand 5 parallel zum Transistor verhindert durch den Leckstrom des GTO-Thyristros das Anliegen einer unzulässig hohen Spannung, während der Ausschaltphase des GTO-Thyristors. (Ein Mosfet ist im gesperrten Zustand sehr hochohmig im Vergleich zu einem GTO)If, according to the invention (see FIG. 1), a GTO thyristor 1 is inserted into the supply line of the power transistor 2 , which operates in C or D mode, and this is driven by the alternating voltage through the transformer 3 in the correct switching rhythm, it is possible keep positive voltage peaks away from transistor 2 . These voltage half-waves are picked up by the GTO thyristor. A resistor 5 in parallel with the transistor prevents the presence of an impermissibly high voltage due to the leakage current of the GTO thyristor during the switch-off phase of the GTO thyristor. (A Mosfet is very high-impedance in the locked state compared to a GTO)

Eine Gleichspannung 6 in der Gateleitung des GTO bewirkt ein problemloses Anschwingen der Anordnung beim Einschalten. Der Widerstand 4 begrenzt den Gatestrom in der Einschaltphase des GTO-Thyristors.A DC voltage 6 in the gate line of the GTO causes a problem-free oscillation of the arrangement when it is switched on. The resistor 4 limits the gate current in the switch-on phase of the GTO thyristor.

Ein Vorteil dieser Schaltung liegt darin, daß der GTO-Thyristor immer im stromlosen Zustand ein- und ausgeschaltet wird.An advantage of this circuit is that the GTO thyristor is always switched on and off in the de-energized state.

Claims (2)

1) Schaltung zur Verdoppelung der Versorgungsspannung an einem Eintakt Frequenzgenerator mit Parallelschwingkreis im C-oder D-Betrieb, dadurch gekennzeichnet, daß in die Zuleitung zum Leistungstransistor ein GTO- Thyristor eingefügt wird, und daß dieser im Nulldurchgang der Wechselspannung im stromlosen Zustand geschaltet wird.1) Circuit for doubling the supply voltage on a single-ended frequency generator with a parallel resonant circuit in C or D operation, characterized in that a GTO thyristor is inserted in the supply line to the power transistor, and that this is switched at zero crossing of the AC voltage in the de-energized state. 2) Anspruch nach 1, dadurch gekennzeichnet, daß während der positiven Halbwelle der GTO gesperrt ist und die positiven Halbwellen vom Transistor ferngehalten werden.2) Claim according to 1, characterized in that during the positive half wave of the GTO is blocked and the positive half-waves are kept away from the transistor.
DE19853540920 1985-11-19 1985-11-19 Frequency generator with raised oscillating circuit voltage Granted DE3540920A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19853540920 DE3540920A1 (en) 1985-11-19 1985-11-19 Frequency generator with raised oscillating circuit voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853540920 DE3540920A1 (en) 1985-11-19 1985-11-19 Frequency generator with raised oscillating circuit voltage

Publications (2)

Publication Number Publication Date
DE3540920A1 true DE3540920A1 (en) 1987-05-21
DE3540920C2 DE3540920C2 (en) 1987-12-17

Family

ID=6286324

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853540920 Granted DE3540920A1 (en) 1985-11-19 1985-11-19 Frequency generator with raised oscillating circuit voltage

Country Status (1)

Country Link
DE (1) DE3540920A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110212756A (en) * 2019-07-03 2019-09-06 山西工程技术学院 A kind of low cost DC voltage rises device and implementation method again

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1291388B (en) * 1963-06-28 1969-03-27 Westinghouse Electric Corp Semiconductor oscillator
DE2059739A1 (en) * 1970-12-04 1972-06-08 Licentia Gmbh Circuit to protect an amplifier against overload
DE2332752A1 (en) * 1973-06-27 1975-01-23 Siemens Ag CIRCUIT ARRANGEMENT FOR PERIODIC GENERATION OF DAMPED HIGH FREQUENCY VIBRATIONS
DE3041928A1 (en) * 1979-11-14 1981-06-11 Tektronix, Inc., 97005 Beaverton, Oreg. RETURNED HORIZONTAL DISTRIBUTION

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1291388B (en) * 1963-06-28 1969-03-27 Westinghouse Electric Corp Semiconductor oscillator
DE2059739A1 (en) * 1970-12-04 1972-06-08 Licentia Gmbh Circuit to protect an amplifier against overload
DE2332752A1 (en) * 1973-06-27 1975-01-23 Siemens Ag CIRCUIT ARRANGEMENT FOR PERIODIC GENERATION OF DAMPED HIGH FREQUENCY VIBRATIONS
DE3041928A1 (en) * 1979-11-14 1981-06-11 Tektronix, Inc., 97005 Beaverton, Oreg. RETURNED HORIZONTAL DISTRIBUTION

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Elektronik-Arbeitsblatt Nr.143,Der C-Verstärker",Elektronik, H.14, 1983, S.77-80 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110212756A (en) * 2019-07-03 2019-09-06 山西工程技术学院 A kind of low cost DC voltage rises device and implementation method again

Also Published As

Publication number Publication date
DE3540920C2 (en) 1987-12-17

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee