DE20009283U1 - Radiation-emitting semiconductor component based on GaN - Google Patents

Radiation-emitting semiconductor component based on GaN

Info

Publication number
DE20009283U1
DE20009283U1 DE20009283U DE20009283U DE20009283U1 DE 20009283 U1 DE20009283 U1 DE 20009283U1 DE 20009283 U DE20009283 U DE 20009283U DE 20009283 U DE20009283 U DE 20009283U DE 20009283 U1 DE20009283 U1 DE 20009283U1
Authority
DE
Germany
Prior art keywords
radiation
semiconductor component
emitting semiconductor
component according
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE20009283U
Other languages
German (de)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE20009283U priority Critical patent/DE20009283U1/en
Priority claimed from DE10020464A external-priority patent/DE10020464A1/en
Priority to DE10026255A priority patent/DE10026255A1/en
Priority to DE10026254A priority patent/DE10026254A1/en
Publication of DE20009283U1 publication Critical patent/DE20009283U1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Laminated Bodies (AREA)

Description

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßt The description text was not recorded electronically  

Der Beschreibungstext wurde nicht elektronisch erfaßtThe description text was not recorded electronically

Claims (10)

8. Strahlungsemittierendes Halbleiterbauelement, dessen Halb­ leiterkörper durch einen Stapel unterschiedlicher Halbleiter­ schichten auf GaN-Basis (1) gebildet ist und der eine erste Hauptfläche (3) und eine zweite Hauptfläche (4) aufweist, wo­ bei wenigstens ein Teil der erzeugten Strahlung (5) durch die erste Hauptfläche (3) ausgekoppelt wird und die zweite Hauptfläche (4) einen Reflektor (6) aufweist, dadurch gekennzeichnet, daß der Stapel unterschiedlicher Halbleiterschichten auf GaN-Basis (1) ge­ bildet ist durch
  • - Aufbringen einer Zwischenschicht (9) auf ein Substrat (8),
  • - Aufbringen einer Mehrzahl unterschiedlicher GaN- Schichten (1) auf die Zwischenschicht (9),
  • - Ablösen des Substrats (8) einschließlich der Zwischen­ schicht (9) und
  • - Aufbringen des Reflektors (6) auf die zweite Hauptflä­ che (4) des GaN-Halbleiterkörpers.
8. Radiation-emitting semiconductor component, the semiconductor body of which is formed by a stack of different semiconductor layers based on GaN ( 1 ) and which has a first main surface ( 3 ) and a second main surface ( 4 ), where at least part of the radiation generated ( 5 ) is coupled out through the first main surface ( 3 ) and the second main surface ( 4 ) has a reflector ( 6 ), characterized in that the stack of different semiconductor layers based on GaN ( 1 ) is formed by
  • - application of an intermediate layer ( 9 ) to a substrate ( 8 ),
  • - applying a plurality of different GaN layers ( 1 ) to the intermediate layer ( 9 ),
  • - Removing the substrate ( 8 ) including the intermediate layer ( 9 ) and
  • - Applying the reflector ( 6 ) on the second Hauptflä surface ( 4 ) of the GaN semiconductor body.
9. Strahlungsemittierendes Halbleiterbauelement nach Anspruch 8, dadurch gekennzeichnet, daß als Substrat (8) ein Si-Substrat verwendet wird.9. Radiation-emitting semiconductor component according to claim 8, characterized in that an Si substrate is used as the substrate ( 8 ). 10. Strahlungsemittierendes Halbleiterbauelement nach An­ spruch 8 oder 9, dadurch gekennzeichnet, daß eine SiC-Zwischenschicht aufgebracht wird.10. Radiation-emitting semiconductor component according to An saying 8 or 9, characterized in that an SiC intermediate layer is applied. 11. Strahlungsemittierendes Halbleiterbauelement nach An­ spruch 8 bis 10, dadurch gekennzeichnet, daß die Zwischenschicht (9) durch Waferbonding mit dem Substrat (8) verbunden ist. 11. Radiation-emitting semiconductor component according to claim 8 to 10, characterized in that the intermediate layer ( 9 ) is connected by wafer bonding to the substrate ( 8 ). 12. Strahlungsemittierendes Halbleiterbauelement nach An­ spruch 8 bis 10, dadurch gekennzeichnet, daß die Zwischenschicht (9) epitaktisch aufgebracht ist.12. Radiation-emitting semiconductor component according to claim 8 to 10, characterized in that the intermediate layer ( 9 ) is applied epitaxially. 13. Strahlungsemittierendes Halbleiterbauelement nach An­ spruch 8 bis 12, dadurch gekennzeichnet, daß der Reflektor (6) durch Aufbringen einer Metallschicht gebil­ det ist, die zugleich der Kontaktierung des Halbleiterkörpers dient.13. Radiation-emitting semiconductor component according to claim 8 to 12, characterized in that the reflector ( 6 ) is gebil det by applying a metal layer which also serves for contacting the semiconductor body. 14. Strahlungsemittierendes Halbleiterbauelement nach An­ spruch 8 bis 13, dadurch gekennzeichnet, daß vor der Ausbildung der GaN-Schichten (1) auf der Zwischen­ schicht (9) eine Maske (11) aufgebracht ist.14. Radiation-emitting semiconductor component according to claim 8 to 13, characterized in that a mask ( 11 ) is applied to the intermediate layer ( 9 ) before the formation of the GaN layers ( 1 ). 15. Strahlungsemittierendes Halbleiterbauelement nach An­ spruch 8 bis 14, dadurch gekennzeichnet, daß der Halbleiterkörper aufgerauht ist.15. Radiation-emitting semiconductor component according to An say 8 to 14, characterized in that the semiconductor body is roughened. 16. Strahlungsemittierendes Halbleiterbauelement nach An­ spruch 15, dadurch gekennzeichnet, daß der Halbleiterkörper durch Ätzen aufgerauht ist.16. Radiation-emitting semiconductor component according to An saying 15, characterized in that the semiconductor body is roughened by etching. 17. Strahlungsemittierendes Halbleiterbauelement nach An­ spruch 15, dadurch gekennzeichnet, daß der Halbleiterkörper durch ein Sandstrahlverfahren aufgerauht ist.17. Radiation-emitting semiconductor component according to An saying 15, characterized in that the semiconductor body is roughened by a sandblasting process is.
DE20009283U 2000-04-26 2000-04-26 Radiation-emitting semiconductor component based on GaN Expired - Lifetime DE20009283U1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE20009283U DE20009283U1 (en) 2000-04-26 2000-04-26 Radiation-emitting semiconductor component based on GaN
DE10026255A DE10026255A1 (en) 2000-04-26 2000-05-26 Radiation-emitting semiconductor element has a semiconductor body formed by a stack of different semiconductor layers based on gallium nitride
DE10026254A DE10026254A1 (en) 2000-04-26 2000-05-26 Radiation-emitting semiconductor element has a semiconductor body formed by a stack of different semiconductor layers based on gallium nitride

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10020464A DE10020464A1 (en) 2000-04-26 2000-04-26 Radiation-emitting semiconductor element has a semiconductor body formed by a stack of different semiconductor layers based on gallium nitride
DE20009283U DE20009283U1 (en) 2000-04-26 2000-04-26 Radiation-emitting semiconductor component based on GaN

Publications (1)

Publication Number Publication Date
DE20009283U1 true DE20009283U1 (en) 2000-12-28

Family

ID=26005476

Family Applications (1)

Application Number Title Priority Date Filing Date
DE20009283U Expired - Lifetime DE20009283U1 (en) 2000-04-26 2000-04-26 Radiation-emitting semiconductor component based on GaN

Country Status (1)

Country Link
DE (1) DE20009283U1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1451853A1 (en) * 2001-10-26 2004-09-01 Oriol, Inc. Diode having vertical structure and method of manufacturing the same
EP1502284A2 (en) * 2002-04-09 2005-02-02 Oriol, Inc. A method of fabricating vertical devices using a metal support film
DE102005008817A1 (en) * 2005-02-24 2006-09-14 Wolfram Henning Optical semiconductor and associated contacting device
WO2009122371A1 (en) * 2008-04-04 2009-10-08 Philips Lumileds Lighting Company, Llc Reflective contact for a semiconductor light emitting device
US8288787B2 (en) 2002-06-26 2012-10-16 Lg Electronics, Inc. Thin film light emitting diode

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10032959B2 (en) 2001-10-26 2018-07-24 Lg Innotek Co., Ltd. Diode having vertical structure
US8592846B2 (en) 2001-10-26 2013-11-26 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US10326055B2 (en) 2001-10-26 2019-06-18 Lg Innotek Co., Ltd. Diode having vertical structure
EP1451853A1 (en) * 2001-10-26 2004-09-01 Oriol, Inc. Diode having vertical structure and method of manufacturing the same
EP1451853A4 (en) * 2001-10-26 2010-01-27 Lg Electronics Inc Diode having vertical structure and method of manufacturing the same
EP3121857A3 (en) * 2001-10-26 2017-04-12 LG Innotek Co., Ltd. Light emitting device
US9620677B2 (en) 2001-10-26 2017-04-11 Lg Innotek Co., Ltd. Diode having vertical structure
US7821021B2 (en) 2001-10-26 2010-10-26 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US7863638B2 (en) 2001-10-26 2011-01-04 Lg Electroncis Inc. Diode having vertical structure and method of manufacturing the same
US7915632B2 (en) 2001-10-26 2011-03-29 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US8008681B2 (en) 2001-10-26 2011-08-30 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US9000468B2 (en) 2001-10-26 2015-04-07 Lg Innotek Co., Ltd. Diode having vertical structure
EP2528112A1 (en) * 2001-10-26 2012-11-28 LG Electronics, Inc. Diode having vertical structure and method of manufacturing the same
US10453998B2 (en) 2002-04-09 2019-10-22 Lg Innotek Co. Ltd. Vertical topology light emitting device
US9847455B2 (en) 2002-04-09 2017-12-19 Lg Innotek Co., Ltd. Vertical topology light emitting device
EP1502284A2 (en) * 2002-04-09 2005-02-02 Oriol, Inc. A method of fabricating vertical devices using a metal support film
EP1502284A4 (en) * 2002-04-09 2010-10-06 Lg Electronics Inc A method of fabricating vertical devices using a metal support film
EP2592664A1 (en) * 2002-04-09 2013-05-15 LG Electronics, Inc. A vertical topology semiconductor light-emitting device
US10644200B2 (en) 2002-04-09 2020-05-05 Lg Innotek Co., Ltd. Vertical topology light emitting device
EP3518296A1 (en) * 2002-04-09 2019-07-31 LG Innotek Co., Ltd. Vertical light-emitting devices comprising a metal support film
EP2648236A1 (en) * 2002-04-09 2013-10-09 LG Electronics, Inc. Vertical light-emitting devices comprising a metal support film
US10147847B2 (en) 2002-04-09 2018-12-04 Lg Innotek Co., Ltd. Vertical topology light emitting device
US9716213B2 (en) 2002-06-26 2017-07-25 Lg Innotek Co., Ltd. Thin film light emitting diode
US10825962B2 (en) 2002-06-26 2020-11-03 Lg Innotek Co., Ltd. Thin film light emitting diode
US10326059B2 (en) 2002-06-26 2019-06-18 Lg Innotek Co., Ltd. Thin film light emitting diode
US9281454B2 (en) 2002-06-26 2016-03-08 Lg Innotek Co., Ltd. Thin film light emitting diode
US8445921B2 (en) 2002-06-26 2013-05-21 Lg Electronics, Inc. Thin film light emitting diode
US8288787B2 (en) 2002-06-26 2012-10-16 Lg Electronics, Inc. Thin film light emitting diode
US8384091B2 (en) 2002-06-26 2013-02-26 Lg Electronics Inc. Thin film light emitting diode
DE102005008817B4 (en) * 2005-02-24 2010-03-18 Wolfram Henning Optical semiconductor and associated contacting device
DE102005008817A1 (en) * 2005-02-24 2006-09-14 Wolfram Henning Optical semiconductor and associated contacting device
WO2009122371A1 (en) * 2008-04-04 2009-10-08 Philips Lumileds Lighting Company, Llc Reflective contact for a semiconductor light emitting device

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Legal Events

Date Code Title Description
R207 Utility model specification

Effective date: 20010201

R081 Change of applicant/patentee

Owner name: OSRAM OPTO SEMICONDUCTORS GMBH, DE

Free format text: FORMER OWNER: OSRAM OPTO SEMICONDUCTORS GMBH & CO. OHG, 93049 REGENSBURG, DE

Effective date: 20021001

R150 Utility model maintained after payment of first maintenance fee after three years

Effective date: 20030626

R151 Utility model maintained after payment of second maintenance fee after six years

Effective date: 20060704

R152 Utility model maintained after payment of third maintenance fee after eight years

Effective date: 20080715

R071 Expiry of right